XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage
Виробник: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP
Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DSOP Advance
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 5000+ | 60.24 грн |
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Технічний опис XPW6R30ANB,L1XHQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 45A 8DSOP, Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-DSOP Advance, Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 960mW (Ta), 132W (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 45A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції XPW6R30ANB,L1XHQ за ціною від 54.43 грн до 198.58 грн
| Фото | Назва | Виробник | Інформація |
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XPW6R30ANB,L1XHQ | Виробник : Toshiba |
MOSFETs 132W 1MHz Automotive; AEC-Q101 |
на замовлення 4982 шт: термін постачання 21-30 дні (днів) |
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XPW6R30ANB,L1XHQ | Виробник : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 100V 45A 8DSOP Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-DSOP Advance Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 960mW (Ta), 132W (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 22.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 5312 шт: термін постачання 21-31 дні (днів) |
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