ZXMC10A816N8TA
Виробник:
на замовлення 500 шт:
термін постачання 14-28 дні (днів)
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Технічний опис ZXMC10A816N8TA
Category: Multi channel transistors, Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A, Type of transistor: N/P-MOSFET, Polarisation: unipolar, Kind of transistor: complementary pair, Drain-source voltage: 100V, Drain current: 1.7A, Pulsed drain current: 9.4A, Power dissipation: 1.3W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 0.17Ω, Mounting: SMD, Gate charge: 9.2nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.
Інші пропозиції ZXMC10A816N8TA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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ZXMC10A816N8TA | Виробник : DIODES INCORPORATED |
 Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 9.4A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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ZXMC10A816N8TA | Виробник : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 100V; 1.7A Type of transistor: N/P-MOSFET Polarisation: unipolar Kind of transistor: complementary pair Drain-source voltage: 100V Drain current: 1.7A Pulsed drain current: 9.4A Power dissipation: 1.3W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 9.2nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |