ZXMP3F37N8TA
Виробник:
на замовлення 990 шт:
термін постачання 14-28 дні (днів)
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Технічний опис ZXMP3F37N8TA
Description: MOSFET P-CH 30V 6.4A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції ZXMP3F37N8TA
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
ZXMP3F37N8TA | Diodes Incorporated |
Description: MOSFET P-CH 30V 6.4A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| ZXMP3F37N8TA |
|
Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1678 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 31.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.