Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102660) > Сторінка 1711 з 1711

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RTR030N05FRATL ROHM SEMICONDUCTOR Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 6.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 12A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
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RD3P130SPFRATL ROHM SEMICONDUCTOR datasheet?p=RD3P130SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 20W
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -52A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -100V
Drain current: -13A
On-state resistance: 0.23Ω
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BD4958FVE-TR ROHM SEMICONDUCTOR bd48xxg-e.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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BD4958G-TR ROHM SEMICONDUCTOR bd48xxg-e.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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RB161QS-40T18R RB161QS-40T18R ROHM SEMICONDUCTOR datasheet?p=RB161QS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 3A
Leakage current: 0.1mA
Max. forward impulse current: 7A
Kind of package: reel; tape
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BD4836G-TR ROHM SEMICONDUCTOR datasheet?p=BD4836G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
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BU4836G-TR ROHM SEMICONDUCTOR bu48xxg-e.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
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RS1L180GNTB ROHM SEMICONDUCTOR rs1l180gntb-e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Drain-source voltage: 60V
Drain current: 68A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: HSOP8
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SML-H12U8TT86C SML-H12U8TT86C ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9FA2D88A0EA340CE&compId=SML-H12M8TT86.pdf?ci_sign=c51929c62b82c0a172b884a7e596ac7bf1aeb20b Category: SMD colour LEDs
Description: LED; red; SMD; 0805; 25÷40mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0805
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Power: 54mW
на замовлення 666 шт:
термін постачання 21-30 дні (днів)
16+26.41 грн
27+14.71 грн
35+11.19 грн
100+7.74 грн
141+6.44 грн
386+6.05 грн
Мінімальне замовлення: 16
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BA7807FP-E2 ROHM SEMICONDUCTOR datasheet?p=BA7807FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 7V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 7V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 9.5...22V
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UDZLVTE-17110 ROHM SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB687773E9C9660D4&compId=udzlvte-17xx.pdf?ci_sign=cc6af7c99b827d3364aac6f32298f2438166cc84 Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.2µA
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RE1J002YNTCL RE1J002YNTCL ROHM SEMICONDUCTOR datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 628 шт:
термін постачання 21-30 дні (днів)
18+23.11 грн
31+12.72 грн
100+7.98 грн
299+3.01 грн
Мінімальне замовлення: 18
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BZX84C6V2LYFHT116 BZX84C6V2LYFHT116 ROHM SEMICONDUCTOR datasheet?p=BZX84C6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
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BD82065FVJ-E2 ROHM SEMICONDUCTOR datasheet?p=BD82065FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
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IMX1T110 IMX1T110 ROHM SEMICONDUCTOR datasheet?p=IMX1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key description Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)
28+14.86 грн
46+8.35 грн
61+6.33 грн
100+5.67 грн
251+3.59 грн
689+3.40 грн
Мінімальне замовлення: 28
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RBQ20BM45AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ20BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 10Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR15BM30AFHTL ROHM SEMICONDUCTOR datasheet?p=RBR15BM30AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 7.5Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR10BM40AFHTL ROHM SEMICONDUCTOR datasheet?p=RBR10BM40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 120µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ10BM45AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ10BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.65V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ15BM45AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ15BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ20BM65AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ20BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 65V; 10Ax2
Max. off-state voltage: 65V
Max. forward voltage: 0.63V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR15BM60AFHTL ROHM SEMICONDUCTOR datasheet?p=RBR15BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.4mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR20BM30AFHTL ROHM SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 10Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR20BM60AFHTL ROHM SEMICONDUCTOR Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ15BM100AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ15BM100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ20BM100AFHTL ROHM SEMICONDUCTOR datasheet?p=RBQ20BM100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RV2C014BCT2CL ROHM SEMICONDUCTOR datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Mounting: SMD
Case: DFN1006-3
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
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QS8J2TR ROHM SEMICONDUCTOR datasheet?p=QS8J2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Case: TSMT8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Version: ESD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -12A
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2SC4061KT146N 2SC4061KT146N ROHM SEMICONDUCTOR 2sc4061kt146n-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)
11+40.44 грн
15+26.98 грн
100+18.01 грн
125+7.28 грн
342+6.90 грн
Мінімальне замовлення: 11
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DAN235ETL ROHM SEMICONDUCTOR datasheet?p=DAN235E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
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DAN235UT106 DAN235UT106 ROHM SEMICONDUCTOR datasheet?p=DAN235U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
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R6030KNZ4C13 ROHM SEMICONDUCTOR datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 305W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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BC858BWT106 BC858BWT106 ROHM SEMICONDUCTOR datasheet?p=BC858BW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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BD5229FVE-TR ROHM SEMICONDUCTOR datasheet?p=BD5229FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: VSOF5
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BD5229G-2MTR ROHM SEMICONDUCTOR datasheet?p=BD5229G-2M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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BD5229G-TR ROHM SEMICONDUCTOR datasheet?p=BD5229G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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RSH065N06GZETB RSH065N06GZETB ROHM SEMICONDUCTOR rsh065n06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSH065N06TB1 RSH065N06TB1 ROHM SEMICONDUCTOR rsh065n06.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSS060P05FRATB RSS060P05FRATB ROHM SEMICONDUCTOR rss060p05fra.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -24A
Case: SOP8
Drain-source voltage: -45V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
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DTC044TUBTL ROHM SEMICONDUCTOR dtc044t.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
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DTC144ECAT116 DTC144ECAT116 ROHM SEMICONDUCTOR datasheet?p=DTC144ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
46+9.08 грн
70+5.36 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BR25G128FJ-3GE2 ROHM SEMICONDUCTOR datasheet?p=BR25G128FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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BR25G128FVM-3GTR ROHM SEMICONDUCTOR datasheet?p=BR25G128FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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BR25G1MF-3GE2 ROHM SEMICONDUCTOR br25g1mxx-3-e.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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BR25G1MFJ-3GE2 ROHM SEMICONDUCTOR datasheet?p=BR25G1MFJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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2SD1782KT146R 2SD1782KT146R ROHM SEMICONDUCTOR 2sd1782k-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...390
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
16+26.41 грн
23+17.40 грн
40+12.87 грн
100+10.65 грн
162+5.59 грн
444+5.29 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2SD1781KT146R 2SD1781KT146R ROHM SEMICONDUCTOR 2sd1781kt146q-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
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2SD1781KT146Q 2SD1781KT146Q ROHM SEMICONDUCTOR 2sd1781kt146q-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
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2SD1782KT146Q 2SD1782KT146Q ROHM SEMICONDUCTOR 2sd1782k-e.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
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RQ6A050ZPTR ROHM SEMICONDUCTOR datasheet?p=RQ6A050ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -20A
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RGS00TS65DHRC11 ROHM SEMICONDUCTOR datasheet?p=RGS00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
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BA78M10FP-E2 ROHM SEMICONDUCTOR datasheet?p=BA78M10FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 10V; 0.5A; TO252-3; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 10V
Output current: 0.5A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12.5...25V
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SML-A12WTT86J ROHM SEMICONDUCTOR sml-a1x-e.pdf Category: SMD colour LEDs
Description: LED; yellow; SMD; 63mcd; 20mA; 590nm; Lens: transparent; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
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SH8KA7GZETB SH8KA7GZETB ROHM SEMICONDUCTOR sh8ka7gzetb-e.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 15A; Idm: 30A; 4.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 4.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BD82004FVJ-MGE2 ROHM SEMICONDUCTOR datasheet?p=BD82004FVJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; TSSOP-B8J
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
On-state resistance: 0.11Ω
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Case: TSSOP-B8J
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2SB1427T100E 2SB1427T100E ROHM SEMICONDUCTOR 2sb1427t100e-e.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 500mW; SC62,SOT89
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 390...820
Collector current: 2A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
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DAN202KT146 DAN202KT146 ROHM SEMICONDUCTOR datasheet?p=DAN202K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMTL ROHM SEMICONDUCTOR datasheet?p=DAN202UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMFHTL ROHM SEMICONDUCTOR DAN202UMFH.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DTA124XMT2L ROHM SEMICONDUCTOR dta124xetl-e.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
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RTR030N05FRATL
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 6.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 12A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
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RD3P130SPFRATL datasheet?p=RD3P130SPFRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 20W
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -52A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -100V
Drain current: -13A
On-state resistance: 0.23Ω
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BD4958FVE-TR bd48xxg-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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BD4958G-TR bd48xxg-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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RB161QS-40T18R datasheet?p=RB161QS-40&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RB161QS-40T18R
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 3A
Leakage current: 0.1mA
Max. forward impulse current: 7A
Kind of package: reel; tape
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BD4836G-TR datasheet?p=BD4836G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
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BU4836G-TR bu48xxg-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
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RS1L180GNTB rs1l180gntb-e
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Drain-source voltage: 60V
Drain current: 68A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: HSOP8
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SML-H12U8TT86C pVersion=0046&contRep=ZT&docId=005056AB281E1EDC9FA2D88A0EA340CE&compId=SML-H12M8TT86.pdf?ci_sign=c51929c62b82c0a172b884a7e596ac7bf1aeb20b
SML-H12U8TT86C
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0805; 25÷40mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0805
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Power: 54mW
на замовлення 666 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+26.41 грн
27+14.71 грн
35+11.19 грн
100+7.74 грн
141+6.44 грн
386+6.05 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
BA7807FP-E2 datasheet?p=BA7807FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 7V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 7V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 9.5...22V
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UDZLVTE-17110 pVersion=0046&contRep=ZT&docId=8954D222ECA01EDDB687773E9C9660D4&compId=udzlvte-17xx.pdf?ci_sign=cc6af7c99b827d3364aac6f32298f2438166cc84
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.2µA
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RE1J002YNTCL datasheet?p=RE1J002YN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RE1J002YNTCL
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 628 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+23.11 грн
31+12.72 грн
100+7.98 грн
299+3.01 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BZX84C6V2LYFHT116 datasheet?p=BZX84C6V2LYFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BZX84C6V2LYFHT116
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
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BD82065FVJ-E2 datasheet?p=BD82065FVJ&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
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IMX1T110 description datasheet?p=IMX1&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
IMX1T110
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+14.86 грн
46+8.35 грн
61+6.33 грн
100+5.67 грн
251+3.59 грн
689+3.40 грн
Мінімальне замовлення: 28
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RBQ20BM45AFHTL datasheet?p=RBQ20BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 10Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR15BM30AFHTL datasheet?p=RBR15BM30AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 7.5Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR10BM40AFHTL datasheet?p=RBR10BM40AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 120µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ10BM45AFHTL datasheet?p=RBQ10BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.65V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ15BM45AFHTL datasheet?p=RBQ15BM45AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ20BM65AFHTL datasheet?p=RBQ20BM65AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 65V; 10Ax2
Max. off-state voltage: 65V
Max. forward voltage: 0.63V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR15BM60AFHTL datasheet?p=RBR15BM60AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.4mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR20BM30AFHTL
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 10Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBR20BM60AFHTL
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ15BM100AFHTL datasheet?p=RBQ15BM100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RBQ20BM100AFHTL datasheet?p=RBQ20BM100AFH&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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RV2C014BCT2CL datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Mounting: SMD
Case: DFN1006-3
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
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QS8J2TR datasheet?p=QS8J2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Case: TSMT8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Version: ESD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -12A
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2SC4061KT146N 2sc4061kt146n-e.pdf
2SC4061KT146N
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+40.44 грн
15+26.98 грн
100+18.01 грн
125+7.28 грн
342+6.90 грн
Мінімальне замовлення: 11
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DAN235ETL datasheet?p=DAN235E&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
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DAN235UT106 datasheet?p=DAN235U&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DAN235UT106
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
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R6030KNZ4C13 datasheet?p=R6030KNZ4&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 305W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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BC858BWT106 datasheet?p=BC858BW&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BC858BWT106
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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BD5229FVE-TR datasheet?p=BD5229FVE&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: VSOF5
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BD5229G-2MTR datasheet?p=BD5229G-2M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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BD5229G-TR datasheet?p=BD5229G&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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RSH065N06GZETB rsh065n06.pdf
RSH065N06GZETB
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSH065N06TB1 rsh065n06.pdf
RSH065N06TB1
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSS060P05FRATB rss060p05fra.pdf
RSS060P05FRATB
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -24A
Case: SOP8
Drain-source voltage: -45V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
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DTC044TUBTL dtc044t.pdf
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
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DTC144ECAT116 datasheet?p=DTC144ECA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DTC144ECAT116
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
на замовлення 70 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.08 грн
70+5.36 грн
Мінімальне замовлення: 46
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BR25G128FJ-3GE2 datasheet?p=BR25G128FJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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BR25G128FVM-3GTR datasheet?p=BR25G128FVM-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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BR25G1MF-3GE2 br25g1mxx-3-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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BR25G1MFJ-3GE2 datasheet?p=BR25G1MFJ-3&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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2SD1782KT146R 2sd1782k-e.pdf
2SD1782KT146R
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...390
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+26.41 грн
23+17.40 грн
40+12.87 грн
100+10.65 грн
162+5.59 грн
444+5.29 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
2SD1781KT146R 2sd1781kt146q-e.pdf
2SD1781KT146R
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
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2SD1781KT146Q 2sd1781kt146q-e.pdf
2SD1781KT146Q
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
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2SD1782KT146Q 2sd1782k-e.pdf
2SD1782KT146Q
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
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RQ6A050ZPTR datasheet?p=RQ6A050ZP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -20A
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RGS00TS65DHRC11 datasheet?p=RGS00TS65DHR&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
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BA78M10FP-E2 datasheet?p=BA78M10FP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 10V; 0.5A; TO252-3; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 10V
Output current: 0.5A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12.5...25V
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SML-A12WTT86J sml-a1x-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 63mcd; 20mA; 590nm; Lens: transparent; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
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SH8KA7GZETB sh8ka7gzetb-e.pdf
SH8KA7GZETB
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 15A; Idm: 30A; 4.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 4.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BD82004FVJ-MGE2 datasheet?p=BD82004FVJ-M&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; TSSOP-B8J
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
On-state resistance: 0.11Ω
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Case: TSSOP-B8J
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2SB1427T100E 2sb1427t100e-e.pdf
2SB1427T100E
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 500mW; SC62,SOT89
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 390...820
Collector current: 2A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
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DAN202KT146 datasheet?p=DAN202K&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
DAN202KT146
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMTL datasheet?p=DAN202UM&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMFHTL DAN202UMFH.pdf
Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DTA124XMT2L dta124xetl-e.pdf
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
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