Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102843) > Сторінка 1713 з 1715
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DTC044TUBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ Case: SOT323F Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 60mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTC144ECAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.35W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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BR25G128FJ-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8 Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BR25G128FVM-3GTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial Mounting: SMD Operating temperature: -40...85°C Case: MSOP8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BR25G1MF-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial Mounting: SMD Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.8...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BR25G1MFJ-3GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.8...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SD1782KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 0.5A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Current gain: 120...390 Frequency: 120MHz |
на замовлення 1450 шт: термін постачання 21-30 дні (днів) |
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2SD1781KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 180...390 Collector current: 0.8A Type of transistor: NPN Collector-emitter voltage: 32V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1781KT146Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 120...270 Collector current: 0.8A Type of transistor: NPN Collector-emitter voltage: 32V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1782KT146Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 120...270 Collector current: 0.5A Type of transistor: NPN Collector-emitter voltage: 80V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 120MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
RQ6A050ZPTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6 Mounting: SMD Case: TSMT6 Drain-source voltage: -12V Drain current: -5A On-state resistance: 88mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RGS00TS65DHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 163W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 150A Mounting: THT Gate charge: 58nC Kind of package: tube Turn-on time: 70ns Turn-off time: 292ns Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BA78M10FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; fixed; 10V; 0.5A; TO252-3; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 2V Output voltage: 10V Output current: 0.5A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 12.5...25V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SML-A12WTT86J | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow; SMD; 63mcd; 20mA; 590nm; Lens: transparent; Front: flat Type of diode: LED LED colour: yellow Mounting: SMD Luminosity: 63mcd LED current: 20mA Wavelength: 590nm LED lens: transparent Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SH8KA7GZETB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 15A; Idm: 30A; 4.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Pulsed drain current: 30A Power dissipation: 4.6W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 10.9mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BD82004FVJ-MGE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; TSSOP-B8J Output current: 0.5A Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2.7...5.5V On-state resistance: 0.11Ω Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel Active logical level: high Protection: over current OCP; overheating OTP; undervoltage UVP Kind of integrated circuit: high-side Case: TSSOP-B8J |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SB1427T100E | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 20V; 2A; 500mW; SC62,SOT89 Frequency: 150MHz Collector-emitter voltage: 20V Current gain: 390...820 Collector current: 2A Type of transistor: PNP Mounting: SMD Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Case: SC62; SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DAN202KT146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SC59; SOT346 Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DAN202UMTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DAN202UMFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Reverse recovery time: 4ns Semiconductor structure: common cathode; double Case: SOT323F Max. forward voltage: 1.2V Max. load current: 0.3A Max. forward impulse current: 4A Power dissipation: 0.2W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
DTA124XMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 22kΩ Base-emitter resistor: 47kΩ Power dissipation: 0.15W Current gain: 68 Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1SS380VMTE-17 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V Type of diode: switching Case: SC90A; SOD323F Mounting: SMD Max. off-state voltage: 80V Load current: 0.1A Semiconductor structure: single diode Max. forward voltage: 1.2V Max. forward impulse current: 0.4A Kind of package: reel; tape Max. load current: 225mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTC115EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 82 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ Mounting: SMD Case: SC75A; SOT416 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BD1754HFN-TR | ROHM SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC Type of integrated circuit: driver Kind of integrated circuit: LED driver Case: HSON8 Output current: 32mA Output voltage: 0.2...4.1V Number of channels: 4 Supply voltage: 2.7...5.5V DC Mounting: SMD Operating temperature: -30...85°C Application: LED lighting control Kind of package: reel; tape |
на замовлення 2736 шт: термін постачання 21-30 дні (днів) |
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BD4925G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS Case: SSOP5 Type of integrated circuit: supervisor circuit Maximum output current: 70mA Active logical level: low Kind of RESET output: CMOS Threshold on-voltage: 2.5V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD Operating temperature: -40...105°C |
на замовлення 2878 шт: термін постачання 21-30 дні (днів) |
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BU4925F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Case: SOP4 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.5V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BU4925FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Case: VSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.5V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
BU4925G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Case: SSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.5V Manufacturer series: BU49 Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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QST8TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457 Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 1.5A Type of transistor: PNP x2 Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC74; SOT457 Frequency: 400MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTA015EEBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 100kΩ Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 80 Collector current: 0.1A Type of transistor: PNP Power dissipation: 0.15W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 100kΩ Base-emitter resistor: 100kΩ Case: SC89 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTC124XCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Mounting: SMD Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 68 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 22kΩ Base-emitter resistor: 47kΩ Case: SOT23 |
на замовлення 925 шт: термін постачання 21-30 дні (днів) |
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R8009KNXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 27A; 59W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 9A Pulsed drain current: 27A Power dissipation: 59W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8001CND3FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1A Pulsed drain current: 4A Power dissipation: 36W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 8.7Ω Mounting: SMD Gate charge: 7.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8002CND3FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 4.3Ω Mounting: SMD Gate charge: 12.1nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8002KND3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.6A; Idm: 4.8A; 30W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.6A Pulsed drain current: 4.8A Power dissipation: 30W Case: TO252 Gate-source voltage: ±20V On-state resistance: 4.2Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8003KND3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 9A Power dissipation: 48W Case: TO252 Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: SMD Gate charge: 11.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8003KNXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 9A Power dissipation: 36W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.8Ω Mounting: THT Gate charge: 11.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8005ANJFRGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 5A Pulsed drain current: 10A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 3.8Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8008ANJFRGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 195W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.54Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
R8008ANJGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 8A Pulsed drain current: 32A Power dissipation: 195W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 1.54Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RF501BM2STL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A Case: DPAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 200V Max. forward voltage: 0.92V Load current: 5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 40A Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RF501BM2SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A Case: DPAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 200V Max. forward voltage: 0.92V Load current: 5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 40A Type of diode: rectifying |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SC4713KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Frequency: 800MHz Collector-emitter voltage: 6V Current gain: 180...390 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SC59; SOT346 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SC4713KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Frequency: 800MHz Collector-emitter voltage: 6V Current gain: 270...560 Collector current: 50mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Case: SC59; SOT346 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
BR25H512FJ-5ACE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP-J8 Mounting: SMD Kind of package: reel; tape Case: SOP-J8 Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 64kx8bit Access time: 3.5ms Clock frequency: 20MHz Kind of interface: serial Memory: 512kb EEPROM Operating temperature: -40...125°C Supply voltage: 1.7...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
2SB1690TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC96 Frequency: 360MHz Collector-emitter voltage: 12V Current gain: 270...680 Collector current: 2A Type of transistor: PNP Power dissipation: 0.5W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC96 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SB1694T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 1A; 200mW; SC70,SOT323 Frequency: 320MHz Collector-emitter voltage: 30V Current gain: 270...680 Collector current: 1A Type of transistor: PNP Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD Case: SC70; SOT323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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KDZVTR8.2B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA Type of diode: Zener Power dissipation: 1W Zener voltage: 8.2V Kind of package: reel; tape Case: SOD123F Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Leakage current: 20µA |
на замовлення 1796 шт: термін постачання 21-30 дні (днів) |
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SST3906T116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 40V; 0.2A; 200/350mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 200/350mW Case: SOT23 Current gain: 30...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DTC144EKAT146 | ROHM SEMICONDUCTOR |
![]() ![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
на замовлення 2880 шт: термін постачання 21-30 дні (днів) |
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DTC144ECAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTC144EEBTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC89 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTC144EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC75A; SOT416 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
DTC144EMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT723 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DTC144EU3T106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 47kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BAT54HMFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 50ns; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Leakage current: 2µA Reverse recovery time: 50ns Capacitance: 12pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SCS308AHGC9 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.71V Max. forward impulse current: 250A Leakage current: 0.16mA Kind of package: tube Max. load current: 36A Power dissipation: 57W |
на замовлення 862 шт: термін постачання 21-30 дні (днів) |
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2SC4097T106Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323 Case: SC70; SOT323 Frequency: 250MHz Collector-emitter voltage: 32V Current gain: 120...270 Collector current: 0.5A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SCR542PFRAT100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89 Power dissipation: 0.5W Case: SC62; SOT89 Frequency: 250MHz Collector-emitter voltage: 30V Current gain: 200...500 Collector current: 5A Type of transistor: NPN Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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SCS220KE2GC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W Semiconductor structure: common cathode; double Max. off-state voltage: 1.2kV Load current: 10A x2 Case: TO247-3 Max. forward voltage: 1.9V Max. forward impulse current: 0.32kA Power dissipation: 270W Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. load current: 94A Leakage current: 0.2mA |
товару немає в наявності |
В кошику од. на суму грн. |
DTC044TUBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
товару немає в наявності
В кошику
од. на суму грн.
DTC144ECAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.35W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.18 грн |
70+ | 5.43 грн |
BR25G128FJ-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
товару немає в наявності
В кошику
од. на суму грн.
BR25G128FVM-3GTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
товару немає в наявності
В кошику
од. на суму грн.
BR25G1MF-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
товару немає в наявності
В кошику
од. на суму грн.
BR25G1MFJ-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
товару немає в наявності
В кошику
од. на суму грн.
2SD1782KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Current gain: 120...390
Frequency: 120MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Current gain: 120...390
Frequency: 120MHz
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.71 грн |
23+ | 17.60 грн |
40+ | 13.02 грн |
100+ | 10.77 грн |
162+ | 5.66 грн |
444+ | 5.35 грн |
2SD1781KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
2SD1781KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
2SD1782KT146Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
RQ6A050ZPTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -5A; Idm: -20A; 1.25W; TSMT6
Mounting: SMD
Case: TSMT6
Drain-source voltage: -12V
Drain current: -5A
On-state resistance: 88mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -20A
товару немає в наявності
В кошику
од. на суму грн.
RGS00TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 163W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 163W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Turn-on time: 70ns
Turn-off time: 292ns
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
BA78M10FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 10V; 0.5A; TO252-3; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 10V
Output current: 0.5A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12.5...25V
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 10V; 0.5A; TO252-3; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 10V
Output current: 0.5A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 12.5...25V
товару немає в наявності
В кошику
од. на суму грн.
SML-A12WTT86J |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 63mcd; 20mA; 590nm; Lens: transparent; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; yellow; SMD; 63mcd; 20mA; 590nm; Lens: transparent; Front: flat
Type of diode: LED
LED colour: yellow
Mounting: SMD
Luminosity: 63mcd
LED current: 20mA
Wavelength: 590nm
LED lens: transparent
Front: flat
товару немає в наявності
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од. на суму грн.
SH8KA7GZETB |
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Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 15A; Idm: 30A; 4.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 4.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 15A; Idm: 30A; 4.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 30A
Power dissipation: 4.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 10.9mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
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од. на суму грн.
BD82004FVJ-MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; TSSOP-B8J
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
On-state resistance: 0.11Ω
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Case: TSSOP-B8J
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 1; N-Channel; SMD; TSSOP-B8J
Output current: 0.5A
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2.7...5.5V
On-state resistance: 0.11Ω
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Active logical level: high
Protection: over current OCP; overheating OTP; undervoltage UVP
Kind of integrated circuit: high-side
Case: TSSOP-B8J
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2SB1427T100E |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 500mW; SC62,SOT89
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 390...820
Collector current: 2A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 2A; 500mW; SC62,SOT89
Frequency: 150MHz
Collector-emitter voltage: 20V
Current gain: 390...820
Collector current: 2A
Type of transistor: PNP
Mounting: SMD
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC62; SOT89
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DAN202KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC59,SOT346; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SC59; SOT346
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DAN202UMFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SOT323F; Ufmax: 1.2V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Reverse recovery time: 4ns
Semiconductor structure: common cathode; double
Case: SOT323F
Max. forward voltage: 1.2V
Max. load current: 0.3A
Max. forward impulse current: 4A
Power dissipation: 0.2W
Kind of package: reel; tape
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DTA124XMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 22kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Power dissipation: 0.15W
Current gain: 68
Frequency: 250MHz
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1SS380VMTE-17 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; SC90A,SOD323F; Ufmax: 1.2V
Type of diode: switching
Case: SC90A; SOD323F
Mounting: SMD
Max. off-state voltage: 80V
Load current: 0.1A
Semiconductor structure: single diode
Max. forward voltage: 1.2V
Max. forward impulse current: 0.4A
Kind of package: reel; tape
Max. load current: 225mA
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DTC115EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Mounting: SMD
Case: SC75A; SOT416
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 82
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Mounting: SMD
Case: SC75A; SOT416
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BD1754HFN-TR |
Виробник: ROHM SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: HSON8
Output current: 32mA
Output voltage: 0.2...4.1V
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -30...85°C
Application: LED lighting control
Kind of package: reel; tape
Category: LED drivers
Description: IC: driver; LED driver; HSON8; 32mA; 0.2÷4.1V; Ch: 4; 2.7÷5.5VDC
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Case: HSON8
Output current: 32mA
Output voltage: 0.2...4.1V
Number of channels: 4
Supply voltage: 2.7...5.5V DC
Mounting: SMD
Operating temperature: -30...85°C
Application: LED lighting control
Kind of package: reel; tape
на замовлення 2736 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 46.75 грн |
14+ | 28.22 грн |
25+ | 24.88 грн |
100+ | 24.34 грн |
BD4925G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Case: SSOP5
Type of integrated circuit: supervisor circuit
Maximum output current: 70mA
Active logical level: low
Kind of RESET output: CMOS
Threshold on-voltage: 2.5V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Operating temperature: -40...105°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); CMOS
Case: SSOP5
Type of integrated circuit: supervisor circuit
Maximum output current: 70mA
Active logical level: low
Kind of RESET output: CMOS
Threshold on-voltage: 2.5V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 2878 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.23 грн |
19+ | 21.01 грн |
100+ | 15.58 грн |
120+ | 7.60 грн |
330+ | 7.21 грн |
BU4925F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SOP4
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SOP4
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
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BU4925FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: VSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
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BU4925G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.5V
Manufacturer series: BU49
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...125°C
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QST8TR |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP x2
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC74; SOT457
Frequency: 400MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 12V; 1.5A; 500mW; SC74,SOT457
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 1.5A
Type of transistor: PNP x2
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC74; SOT457
Frequency: 400MHz
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DTA015EEBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 100kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Case: SC89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC89; R1: 100kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 80
Collector current: 0.1A
Type of transistor: PNP
Power dissipation: 0.15W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 100kΩ
Base-emitter resistor: 100kΩ
Case: SC89
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DTC124XCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Case: SOT23
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Mounting: SMD
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 68
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Case: SOT23
на замовлення 925 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
63+ | 6.68 грн |
105+ | 3.72 грн |
148+ | 2.62 грн |
500+ | 2.11 грн |
557+ | 1.64 грн |
R8009KNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 27A; 59W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 9A; Idm: 27A; 59W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 9A
Pulsed drain current: 27A
Power dissipation: 59W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
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R8001CND3FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 8.7Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1A; Idm: 4A; 36W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 36W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 8.7Ω
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8002CND3FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 4.3Ω
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 69W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 4.3Ω
Mounting: SMD
Gate charge: 12.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8002KND3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.6A; Idm: 4.8A; 30W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 4.8A
Power dissipation: 30W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.6A; Idm: 4.8A; 30W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 4.8A
Power dissipation: 30W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 4.2Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8003KND3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 48W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 48W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 48W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8003KNXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 11.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 9A; 36W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 9A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.8Ω
Mounting: THT
Gate charge: 11.5nC
Kind of package: tube
Kind of channel: enhancement
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R8005ANJFRGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 5A; Idm: 10A; 120W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 3.8Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8008ANJFRGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.54Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.54Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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R8008ANJGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.54Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 32A; 195W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 195W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 1.54Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
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RF501BM2STL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 40A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 40A
Type of diode: rectifying
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RF501BM2SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 40A
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 5A; 25ns; DPAK; Ufmax: 0.92V; Ifsm: 40A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 200V
Max. forward voltage: 0.92V
Load current: 5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 40A
Type of diode: rectifying
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2SC4713KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Frequency: 800MHz
Collector-emitter voltage: 6V
Current gain: 180...390
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Frequency: 800MHz
Collector-emitter voltage: 6V
Current gain: 180...390
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
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2SC4713KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Frequency: 800MHz
Collector-emitter voltage: 6V
Current gain: 270...560
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Frequency: 800MHz
Collector-emitter voltage: 6V
Current gain: 270...560
Collector current: 50mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Case: SC59; SOT346
Mounting: SMD
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BR25H512FJ-5ACE2 |
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP-J8
Mounting: SMD
Kind of package: reel; tape
Case: SOP-J8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 3.5ms
Clock frequency: 20MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating temperature: -40...125°C
Supply voltage: 1.7...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 20MHz; SOP-J8
Mounting: SMD
Kind of package: reel; tape
Case: SOP-J8
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 64kx8bit
Access time: 3.5ms
Clock frequency: 20MHz
Kind of interface: serial
Memory: 512kb EEPROM
Operating temperature: -40...125°C
Supply voltage: 1.7...5.5V DC
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2SB1690TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC96
Frequency: 360MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC96
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC96
Frequency: 360MHz
Collector-emitter voltage: 12V
Current gain: 270...680
Collector current: 2A
Type of transistor: PNP
Power dissipation: 0.5W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC96
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2SB1694T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 200mW; SC70,SOT323
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC70; SOT323
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 200mW; SC70,SOT323
Frequency: 320MHz
Collector-emitter voltage: 30V
Current gain: 270...680
Collector current: 1A
Type of transistor: PNP
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: SC70; SOT323
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KDZVTR8.2B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 8.2V; SMD; reel,tape; SOD123F; single diode; 20uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 8.2V
Kind of package: reel; tape
Case: SOD123F
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 20µA
на замовлення 1796 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.22 грн |
21+ | 19.15 грн |
100+ | 12.79 грн |
136+ | 6.67 грн |
374+ | 6.28 грн |
SST3906T116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 200/350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 200/350mW
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 200/350mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 200/350mW
Case: SOT23
Current gain: 30...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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DTC144EKAT146 | ![]() |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
на замовлення 2880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.52 грн |
54+ | 7.29 грн |
100+ | 4.68 грн |
390+ | 2.33 грн |
1072+ | 2.19 грн |
DTC144ECAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTC144EEBTL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC89; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC89
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTC144EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC75A; SOT416
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTC144EMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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DTC144EU3T106 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
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BAT54HMFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 50ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 2µA
Reverse recovery time: 50ns
Capacitance: 12pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 30V; 0.2A; 50ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Leakage current: 2µA
Reverse recovery time: 50ns
Capacitance: 12pF
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SCS308AHGC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
на замовлення 862 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 260.45 грн |
5+ | 217.04 грн |
6+ | 172.86 грн |
15+ | 163.56 грн |
2SC4097T106Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Case: SC70; SOT323
Frequency: 250MHz
Collector-emitter voltage: 32V
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.5A; 200mW; SC70,SOT323
Case: SC70; SOT323
Frequency: 250MHz
Collector-emitter voltage: 32V
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
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2SCR542PFRAT100 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89
Power dissipation: 0.5W
Case: SC62; SOT89
Frequency: 250MHz
Collector-emitter voltage: 30V
Current gain: 200...500
Collector current: 5A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 5A; 500mW; SC62,SOT89
Power dissipation: 0.5W
Case: SC62; SOT89
Frequency: 250MHz
Collector-emitter voltage: 30V
Current gain: 200...500
Collector current: 5A
Type of transistor: NPN
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 990 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.60 грн |
12+ | 34.18 грн |
46+ | 19.69 грн |
127+ | 18.60 грн |
500+ | 17.91 грн |
SCS220KE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Load current: 10A x2
Case: TO247-3
Max. forward voltage: 1.9V
Max. forward impulse current: 0.32kA
Power dissipation: 270W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. load current: 94A
Leakage current: 0.2mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; 270W
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.2kV
Load current: 10A x2
Case: TO247-3
Max. forward voltage: 1.9V
Max. forward impulse current: 0.32kA
Power dissipation: 270W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. load current: 94A
Leakage current: 0.2mA
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