Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103035) > Сторінка 1713 з 1718
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| STZ6.8NT146 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346 Type of diode: Zener Power dissipation: 0.2W Zener voltage: 6.8V Mounting: SMD Kind of package: reel; tape Case: SC59; SOT346 Semiconductor structure: common anode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BR25G128FJ-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8 Mounting: SMD Interface: SPI Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.6...5.5V DC Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Case: SOP-J8 Kind of package: reel; tape Kind of interface: serial |
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В кошику од. на суму грн. | |||||||||||||||||
| BR25G128FVM-3GTR | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial Mounting: SMD Interface: SPI Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.6...5.5V DC Memory: 128kb EEPROM Memory organisation: 16kx8bit Clock frequency: 20MHz Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Case: MSOP8 Kind of package: reel; tape Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| UT6K30TCR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8 Mounting: SMD Case: DFN2020D-8 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 2.1nC On-state resistance: 223mΩ Power dissipation: 2W Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Semiconductor structure: double series Mounting: SMD Kind of package: reel; tape Case: SC70; SOT323 Type of diode: switching Load current: 0.1A Max. load current: 0.2A Power dissipation: 0.2W Max. forward impulse current: 0.3A Max. forward voltage: 1V Max. off-state voltage: 20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| UDZVTE-1710B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| UDZVFHTE-1710B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F Type of diode: Zener Power dissipation: 0.2W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BV2HC045EFU-CE2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V Type of integrated circuit: power switch Number of channels: 2 Kind of integrated circuit: high-side Protection: over current OCP; overheating OTP; undervoltage UVP Mounting: SMD Operating temperature: -40...150°C On-state resistance: 0.1Ω Supply voltage: 6...19V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SML-P11YTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0402; 4÷7.6mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0402 Luminosity: 4...7.6mcd Operating voltage: 1.9V DC Dimensions: 1x0.6x0.2mm LED current: 1mA Wavelength: 583...591nm Front: flat Power: 52mW LED lens: transparent |
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В кошику од. на суму грн. | |||||||||||||||||
| SML-P12WTT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0402; 70mcd; 20mA; 585nm; Lens: transparent Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0402 Luminosity: 70mcd LED current: 20mA Wavelength: 585nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BZX84C8V2LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZX84C8V2LYT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.25W Zener voltage: 8.2V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CDZVT2R3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 100mW; 3.6V; SMD; reel,tape; SOD923; single diode Type of diode: Zener Power dissipation: 0.1W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD923 Semiconductor structure: single diode Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PDZVTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| PDZVTFTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD128 Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| YFZVFHTR3.6B | ROHM SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 500mW; 3.6V; SMD; reel,tape; SOD323HE; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Kind of package: reel; tape Case: SOD323HE Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RXH090N03TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 27mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BD5252G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Kind of package: reel; tape Case: SSOP5 Type of integrated circuit: supervisor circuit Active logical level: low Kind of RESET output: open drain Mounting: SMD Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 5.2V Manufacturer series: BD52 Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| EMH25FHAT2R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ Mounting: SMD Case: SOT563 Type of transistor: NPN x2 Kind of package: reel; tape Collector current: 0.1A Power dissipation: 0.15W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RQ5C060BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -6A Gate charge: 19.2nC On-state resistance: 51mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RQ5C035BCTCL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -12A Drain current: -3.5A Gate charge: 6.5nC On-state resistance: 135mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RF6C055BCTCR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T Case: SOT363T Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -5.5A Gate charge: 15.2nC On-state resistance: 25.8mΩ Power dissipation: 1W Gate-source voltage: ±8V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SD1484KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346 Power dissipation: 0.2W Collector current: 0.5A Collector-emitter voltage: 50V Current gain: 180...390 Frequency: 250MHz Polarisation: bipolar Case: SC59; SOT346 Type of transistor: NPN Kind of package: reel; tape Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTB143EKT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SC59; SOT346 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 47 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DTB143ECT116 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SOT23 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 0.5A Current gain: 47 Collector-emitter voltage: 50V Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Mounting: THT Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Case: TO247-3 Gate charge: 36nC Turn-on time: 46ns Turn-off time: 290ns Collector current: 30A Gate-emitter voltage: ±30V Pulsed collector current: 90A Power dissipation: 111W Collector-emitter voltage: 650V |
на замовлення 407 шт: термін постачання 14-30 дні (днів) |
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| BU4809G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuitsDescription: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Case: SSOP5 Mounting: SMD Manufacturer series: BU48 Operating temperature: -40...125°C Active logical level: low Kind of RESET output: open drain Kind of integrated circuit: voltage detector Supply voltage: 700mV DC...7V DC Threshold on-voltage: 0.9V Number of channels: 1 Integrated circuit features: ±1% accuracy Type of integrated circuit: supervisor circuit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.55V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 100A Kind of package: reel; tape Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BA25DD0WHFP-TR | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1% Case: HRP5 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Tolerance: ±1% Output current: 2A Output voltage: 2.5V Input voltage: 3...25V Kind of voltage regulator: fixed; LDO; linear Type of integrated circuit: voltage regulator Operating temperature: -40...125°C Voltage drop: 0.7V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SML-P12Y2TT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; yellow; SMD; 0402; 50mcd; 20mA; 580nm; Lens: transparent Type of diode: LED LED colour: yellow Mounting: SMD Case - inch: 0402 Luminosity: 50mcd LED current: 20mA Wavelength: 580nm Front: flat LED lens: transparent |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BU9889GUL-WE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kBEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; serial Mounting: SMD Kind of package: reel; tape Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Case: VCSP50L1 Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.7...5.5V DC Memory: 8kB EEPROM Clock frequency: 400kHz Memory organisation: 1kx8bit Interface: 2-wire; I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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UMF28NTR | ROHM SEMICONDUCTOR |
Category: Complementary transistorsDescription: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.15/0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68...390 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz; 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SML-P24MUWT86R | ROHM SEMICONDUCTOR |
Category: SMD colour LEDsDescription: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent Type of diode: LED LED colour: green; red Mounting: SMD Case - inch: 0404 LED current: 20mA LED lens: diffused; transparent Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RV2C010UNT2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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R6030JNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247 Mounting: THT Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO247 Gate charge: 74nC On-state resistance: 143mΩ Drain current: 30A Gate-source voltage: ±30V Pulsed drain current: 90A Power dissipation: 370W Drain-source voltage: 600V Polarisation: unipolar |
на замовлення 525 шт: термін постачання 14-30 дні (днів) |
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RRQ030P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.25W Case: SOT457 Gate-source voltage: ±20V On-state resistance: 75mΩ Mounting: SMD Gate charge: 5.2nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry Version: ESD |
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В кошику од. на суму грн. | ||||||||||||||||
| RSR025P03FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 5.4nC On-state resistance: 0.16Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 3.7nC On-state resistance: 98mΩ Power dissipation: 0.8W Gate-source voltage: ±12V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 4.4nC On-state resistance: 0.2Ω Power dissipation: 1.25W Gate-source voltage: ±20V Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| RSR025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Pulsed drain current: 10A Drain current: 2.5A Gate charge: 2.9nC On-state resistance: 0.118Ω Power dissipation: 1W Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Case: TSMT6 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 6.4nC On-state resistance: 0.19Ω Power dissipation: 1.25W Gate-source voltage: ±12V Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Case: TSMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -10A Drain current: -2.5A Gate charge: 7nC On-state resistance: 0.16Ω Power dissipation: 1W Gate-source voltage: ±12V Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||
| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Case: TUMT3 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 5A Drain current: 2.5A Gate charge: 5nC On-state resistance: 0.16Ω Power dissipation: 0.8W Gate-source voltage: ±10V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.53V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.2mA |
на замовлення 850 шт: термін постачання 14-30 дні (днів) |
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RB068L100DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.79V Max. forward impulse current: 110A Kind of package: reel; tape Leakage current: 3µA |
на замовлення 1422 шт: термін постачання 14-30 дні (днів) |
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RFN2L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 1.5A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.55V Max. forward impulse current: 40A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RFN1L6SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 0.8A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.45V Max. forward impulse current: 15A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF201L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 2A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR2L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 2A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.52V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR3L40ADDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.69V Max. forward impulse current: 30A Kind of package: reel; tape Leakage current: 50µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR3L60BDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 50A Kind of package: reel; tape Leakage current: 0.15mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
RF101L2SDDTE25 | ROHM SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 25ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 0.87V Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB050L-60DDTE25 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO214AC; SMA Max. forward voltage: 0.56V Max. forward impulse current: 70A Kind of package: reel; tape Leakage current: 0.1mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
RRL035P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.5A Pulsed drain current: -14A Power dissipation: 1W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| RSQ035N03FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 94mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| STZ6.8NT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 6.8V; SMD; reel,tape; SC59,SOT346
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 6.8V
Mounting: SMD
Kind of package: reel; tape
Case: SC59; SOT346
Semiconductor structure: common anode; double
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В кошику
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| BR25G128FJ-3GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.6...5.5V DC
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: SOP-J8
Kind of package: reel; tape
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.6...5.5V DC
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: SOP-J8
Kind of package: reel; tape
Kind of interface: serial
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| BR25G128FVM-3GTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.6...5.5V DC
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: MSOP8
Kind of package: reel; tape
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Interface: SPI
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.6...5.5V DC
Memory: 128kb EEPROM
Memory organisation: 16kx8bit
Clock frequency: 20MHz
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Case: MSOP8
Kind of package: reel; tape
Kind of interface: serial
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| UT6K30TCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Case: DFN2020D-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 223mΩ
Power dissipation: 2W
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3A; Idm: 12A; 2W; DFN2020D-8
Mounting: SMD
Case: DFN2020D-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 2.1nC
On-state resistance: 223mΩ
Power dissipation: 2W
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of package: reel; tape
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| DA204UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Semiconductor structure: double series
Mounting: SMD
Kind of package: reel; tape
Case: SC70; SOT323
Type of diode: switching
Load current: 0.1A
Max. load current: 0.2A
Power dissipation: 0.2W
Max. forward impulse current: 0.3A
Max. forward voltage: 1V
Max. off-state voltage: 20V
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| UDZVTE-1710B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
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| UDZVFHTE-1710B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 10V; SMD; reel,tape; SC90A,SOD323F
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
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| BV2HC045EFU-CE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
Number of channels: 2
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Supply voltage: 6...19V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; Ch: 2; SMD; -40÷150°C; 6÷19V
Type of integrated circuit: power switch
Number of channels: 2
Kind of integrated circuit: high-side
Protection: over current OCP; overheating OTP; undervoltage UVP
Mounting: SMD
Operating temperature: -40...150°C
On-state resistance: 0.1Ω
Supply voltage: 6...19V
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| SML-P11YTT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 4÷7.6mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 4...7.6mcd
Operating voltage: 1.9V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 583...591nm
Front: flat
Power: 52mW
LED lens: transparent
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 4÷7.6mcd; 1.9VDC; 1x0.6x0.2mm; 1mA; 52mW
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 4...7.6mcd
Operating voltage: 1.9V DC
Dimensions: 1x0.6x0.2mm
LED current: 1mA
Wavelength: 583...591nm
Front: flat
Power: 52mW
LED lens: transparent
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| SML-P12WTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 70mcd; 20mA; 585nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 70mcd
LED current: 20mA
Wavelength: 585nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 70mcd; 20mA; 585nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 70mcd
LED current: 20mA
Wavelength: 585nm
Front: flat
LED lens: transparent
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| BZX84C8V2LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Application: automotive industry
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| BZX84C8V2LYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 8.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
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| CDZVT2R3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.6V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 100mW; 3.6V; SMD; reel,tape; SOD923; single diode
Type of diode: Zener
Power dissipation: 0.1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD923
Semiconductor structure: single diode
Tolerance: ±2%
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| KDZVTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±2%
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Tolerance: ±2%
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| PDZVTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
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| KDZVTFTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
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| PDZVTFTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.6V; SMD; reel,tape; SOD128; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD128
Semiconductor structure: single diode
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| YFZVFHTR3.6B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 500mW; 3.6V; SMD; reel,tape; SOD323HE; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323HE
Semiconductor structure: single diode
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| RXH090N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 9A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BD5252G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Mounting: SMD
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.2V
Manufacturer series: BD52
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Kind of package: reel; tape
Case: SSOP5
Type of integrated circuit: supervisor circuit
Active logical level: low
Kind of RESET output: open drain
Mounting: SMD
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 5.2V
Manufacturer series: BD52
Integrated circuit features: ±1% accuracy
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| EMH25FHAT2R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Mounting: SMD
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT563; R1: 4.7kΩ
Mounting: SMD
Case: SOT563
Type of transistor: NPN x2
Kind of package: reel; tape
Collector current: 0.1A
Power dissipation: 0.15W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
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| RQ5C060BCTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -6A; Idm: -18A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -6A
Gate charge: 19.2nC
On-state resistance: 51mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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| RQ5C035BCTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -12A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -12A
Drain current: -3.5A
Gate charge: 6.5nC
On-state resistance: 135mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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| RF6C055BCTCR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; Idm: -18A; 1W; SOT363T
Case: SOT363T
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -18A
Drain current: -5.5A
Gate charge: 15.2nC
On-state resistance: 25.8mΩ
Power dissipation: 1W
Gate-source voltage: ±8V
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| 2SD1484KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 50V
Current gain: 180...390
Frequency: 250MHz
Polarisation: bipolar
Case: SC59; SOT346
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.5A; 200mW; SC59,SOT346
Power dissipation: 0.2W
Collector current: 0.5A
Collector-emitter voltage: 50V
Current gain: 180...390
Frequency: 250MHz
Polarisation: bipolar
Case: SC59; SOT346
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
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| DTB143EKT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 47
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC59; SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 47
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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| DTB143ECT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 47
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 4.7kΩ
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 0.5A
Current gain: 47
Collector-emitter voltage: 50V
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Frequency: 200MHz
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| RGS60TS65DHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Gate charge: 36nC
Turn-on time: 46ns
Turn-off time: 290ns
Collector current: 30A
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Power dissipation: 111W
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Case: TO247-3
Gate charge: 36nC
Turn-on time: 46ns
Turn-off time: 290ns
Collector current: 30A
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Power dissipation: 111W
Collector-emitter voltage: 650V
на замовлення 407 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 539.97 грн |
| 10+ | 333.15 грн |
| 30+ | 296.32 грн |
| 90+ | 291.30 грн |
| BU4809G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Manufacturer series: BU48
Operating temperature: -40...125°C
Active logical level: low
Kind of RESET output: open drain
Kind of integrated circuit: voltage detector
Supply voltage: 700mV DC...7V DC
Threshold on-voltage: 0.9V
Number of channels: 1
Integrated circuit features: ±1% accuracy
Type of integrated circuit: supervisor circuit
Kind of package: reel; tape
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| RB050L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.55V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 1mA
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| RB058L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 100A
Kind of package: reel; tape
Leakage current: 5µA
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| RB068L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 1µA
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| BA25DD0WHFP-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1%
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Output current: 2A
Output voltage: 2.5V
Input voltage: 3...25V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.7V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 2A; HRP5; SMD; ±1%
Case: HRP5
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Tolerance: ±1%
Output current: 2A
Output voltage: 2.5V
Input voltage: 3...25V
Kind of voltage regulator: fixed; LDO; linear
Type of integrated circuit: voltage regulator
Operating temperature: -40...125°C
Voltage drop: 0.7V
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| SML-P12Y2TT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 50mcd; 20mA; 580nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 50mcd
LED current: 20mA
Wavelength: 580nm
Front: flat
LED lens: transparent
Category: SMD colour LEDs
Description: LED; yellow; SMD; 0402; 50mcd; 20mA; 580nm; Lens: transparent
Type of diode: LED
LED colour: yellow
Mounting: SMD
Case - inch: 0402
Luminosity: 50mcd
LED current: 20mA
Wavelength: 580nm
Front: flat
LED lens: transparent
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| BU9889GUL-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kBEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; serial
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: VCSP50L1
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 8kB EEPROM
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Interface: 2-wire; I2C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kBEEPROM; 2-wire,I2C; 1kx8bit; 400kHz; serial
Mounting: SMD
Kind of package: reel; tape
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Case: VCSP50L1
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.7...5.5V DC
Memory: 8kB EEPROM
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Interface: 2-wire; I2C
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| UMF28NTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.15/0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz; 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
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| SML-P24MUWT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Case - inch: 0404
LED current: 20mA
LED lens: diffused; transparent
Front: flat
Category: SMD colour LEDs
Description: LED; red,green; SMD; 0404; 20mA; Lens: diffused,transparent
Type of diode: LED
LED colour: green; red
Mounting: SMD
Case - inch: 0404
LED current: 20mA
LED lens: diffused; transparent
Front: flat
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| RV2C010UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| R6030JNZ4C13 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247
Gate charge: 74nC
On-state resistance: 143mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 90A
Power dissipation: 370W
Drain-source voltage: 600V
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 370W; TO247
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO247
Gate charge: 74nC
On-state resistance: 143mΩ
Drain current: 30A
Gate-source voltage: ±30V
Pulsed drain current: 90A
Power dissipation: 370W
Drain-source voltage: 600V
Polarisation: unipolar
на замовлення 525 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 514.73 грн |
| 5+ | 409.32 грн |
| 30+ | 324.78 грн |
| RRQ030P03FRATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3A; Idm: -12A; 1.25W; SOT457
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3A
Pulsed drain current: -12A
Power dissipation: 1.25W
Case: SOT457
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Version: ESD
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| RSR025P03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 5.4nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
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| RTF025N03FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 3.7nC
On-state resistance: 98mΩ
Power dissipation: 0.8W
Gate-source voltage: ±12V
Kind of channel: enhancement
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| RSQ025P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 4.4nC
On-state resistance: 0.2Ω
Power dissipation: 1.25W
Gate-source voltage: ±20V
Kind of channel: enhancement
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| RSR025N03FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 10A
Drain current: 2.5A
Gate charge: 2.9nC
On-state resistance: 0.118Ω
Power dissipation: 1W
Gate-source voltage: ±20V
Kind of channel: enhancement
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| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Case: TSMT6
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 6.4nC
On-state resistance: 0.19Ω
Power dissipation: 1.25W
Gate-source voltage: ±12V
Kind of channel: enhancement
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| RTR025P02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 7nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Case: TSMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2.5A
Gate charge: 7nC
On-state resistance: 0.16Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Kind of channel: enhancement
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| RUF025N02FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 5A
Drain current: 2.5A
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Gate-source voltage: ±10V
Kind of channel: enhancement
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| RBR5L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.53V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.2mA
на замовлення 850 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.61 грн |
| 10+ | 48.21 грн |
| 25+ | 42.36 грн |
| 100+ | 34.40 грн |
| 500+ | 26.87 грн |
| RB068L100DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.79V
Max. forward impulse current: 110A
Kind of package: reel; tape
Leakage current: 3µA
на замовлення 1422 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.06 грн |
| 18+ | 23.94 грн |
| 25+ | 21.18 грн |
| 50+ | 19.00 грн |
| 100+ | 16.82 грн |
| 250+ | 13.98 грн |
| 500+ | 11.97 грн |
| 1000+ | 9.88 грн |
| RFN2L6SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1.5A; 35ns; SMA; Ufmax: 1.55V; Ifsm: 40A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 1.5A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.55V
Max. forward impulse current: 40A
Kind of package: reel; tape
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| RFN1L6SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 0.8A; 35ns; SMA; Ufmax: 1.45V; Ifsm: 15A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 0.8A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.45V
Max. forward impulse current: 15A
Kind of package: reel; tape
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| RBR1L40ADDTE25 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RF201L2SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 2A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RBR2L60BDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.52V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RBR3L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.69V
Max. forward impulse current: 30A
Kind of package: reel; tape
Leakage current: 50µA
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| RBR3L60BDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 50A
Kind of package: reel; tape
Leakage current: 0.15mA
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| RF101L2SDDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMA; Ufmax: 0.87V; Ifsm: 20A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 0.87V
Max. forward impulse current: 20A
Kind of package: reel; tape
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| RB050L-60DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO214AC; SMA
Max. forward voltage: 0.56V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.1mA
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| RRL035P03FRATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.5A; Idm: -14A; 1W; SOT363
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 1W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
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| RSQ035N03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 94mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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