Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102662) > Сторінка 1711 з 1712
| Фото | Назва | Виробник | Інформація |
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UMH11NFHATN | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| EMD3FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| EMD9FHAT2R | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
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В кошику од. на суму грн. | |||||||||||||
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UMD9NFHATR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 68 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMD3NFHATR | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88; SOT363 Current gain: 30 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| RTQ025P02FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±12V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhancement |
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| RUF025N02FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.5A Pulsed drain current: 5A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±10V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
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| RSQ025P03FRATR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhancement |
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| RTF025N03FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±12V On-state resistance: 98mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhancement |
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| RTR025P02FRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.5A Pulsed drain current: -10A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±12V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| DTC114EEFRATL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Polarisation: bipolar Type of transistor: NPN Power dissipation: 0.15W Kind of package: reel; tape Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ Mounting: SMD Case: SC75A; SOT416 Frequency: 250MHz Collector-emitter voltage: 50V Current gain: 30 Collector current: 0.1A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RTR030N05FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3 Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 1W Kind of package: reel; tape Gate charge: 6.2nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 12A Mounting: SMD Case: TSMT3 Drain-source voltage: 45V Drain current: 3A On-state resistance: 95mΩ |
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| RD3P130SPFRATL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W Polarisation: unipolar Type of transistor: P-MOSFET Power dissipation: 20W Kind of package: reel; tape Gate charge: 40nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -52A Mounting: SMD Case: DPAK; TO252 Drain-source voltage: -100V Drain current: -13A On-state resistance: 0.23Ω |
товару немає в наявності |
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| BD4958FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Mounting: SMD Operating temperature: -40...105°C Case: VSOF5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 5.8V Kind of integrated circuit: voltage detector |
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| BD4958G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Manufacturer series: BD49 Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: CMOS Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 5.8V Kind of integrated circuit: voltage detector |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RB161QS-40T18R | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD882 Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.6V Max. load current: 3A Leakage current: 0.1mA Max. forward impulse current: 7A Kind of package: reel; tape |
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| BD4836G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Operating temperature: -40...105°C Case: SSOP5 Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.6V Manufacturer series: BD48 Kind of integrated circuit: voltage detector |
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| BU4836G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Operating temperature: -40...125°C Case: SSOP5 Supply voltage: 700mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 3.6V Manufacturer series: BU48 Kind of integrated circuit: voltage detector |
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В кошику од. на суму грн. | |||||||||||||
| RS1L180GNTB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8 Drain-source voltage: 60V Drain current: 68A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 39W Polarisation: unipolar Kind of package: reel; tape Gate charge: 63nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 72A Mounting: SMD Case: HSOP8 |
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SML-H12U8TT86C | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; red; SMD; 0805; 25÷40mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: red Mounting: SMD Case: 0805 Luminosity: 25...40mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 615...625nm LED lens: transparent Front: flat Power: 54mW |
на замовлення 666 шт: термін постачання 21-30 дні (днів) |
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| BA7807FP-E2 | ROHM SEMICONDUCTOR |
Category: Fixed voltage regulators Description: IC: voltage regulator; fixed; 7V; 1A; TO252-3; SMD; reel,tape; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed Voltage drop: 2V Output voltage: 7V Output current: 1A Case: TO252-3 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Number of channels: 1 Input voltage: 9.5...22V |
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| UDZLVTE-17110 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 200mW; 110V; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 110V Mounting: SMD Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 628 шт: термін постачання 21-30 дні (днів) |
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BZX84C6V2LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 6.2V Mounting: SMD Tolerance: ±6.5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Application: automotive industry |
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| BD82065FVJ-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IMX1T110 | ROHM SEMICONDUCTOR |
 Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457 Mounting: SMD Case: SC74; SOT457 Kind of package: reel; tape Frequency: 180MHz Collector-emitter voltage: 50V Current gain: 120...560 Collector current: 0.15A Type of transistor: NPN x2 Power dissipation: 0.3W Polarisation: bipolar |
на замовлення 2604 шт: термін постачання 21-30 дні (днів) |
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| RBQ20BM45AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 10Ax2 Max. off-state voltage: 45V Max. forward voltage: 0.59V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
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В кошику од. на суму грн. | |||||||||||||
| RBR15BM30AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 7.5Ax2 Max. off-state voltage: 30V Max. forward voltage: 0.51V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBR10BM40AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2 Max. off-state voltage: 40V Max. forward voltage: 0.62V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A Leakage current: 120µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBQ10BM45AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 5Ax2 Max. off-state voltage: 45V Max. forward voltage: 0.65V Load current: 5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A Leakage current: 70µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBQ15BM45AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 7.5Ax2 Max. off-state voltage: 45V Max. forward voltage: 0.59V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 140µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBQ20BM65AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 65V; 10Ax2 Max. off-state voltage: 65V Max. forward voltage: 0.63V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBR15BM60AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2 Max. off-state voltage: 60V Max. forward voltage: 0.58V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.4mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBR20BM30AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 10Ax2 Max. off-state voltage: 30V Max. forward voltage: 0.51V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.3mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBR20BM60AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2 Max. off-state voltage: 60V Max. forward voltage: 0.59V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.6mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBQ15BM100AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2 Max. off-state voltage: 100V Max. forward voltage: 0.71V Load current: 7.5A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 140µA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RBQ20BM100AFHTL | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2 Max. off-state voltage: 100V Max. forward voltage: 0.69V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 100A Leakage current: 0.2mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: DPAK; SC63; TO252 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| RV2C014BCT2CL | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW Mounting: SMD Case: DFN1006-3 Kind of package: reel; tape Drain-source voltage: -20V Drain current: -1.4A On-state resistance: 0.7Ω Type of transistor: P-MOSFET Power dissipation: 0.6W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -2.8A |
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| QS8J2TR | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8 Case: TSMT8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -12V Drain current: -4A On-state resistance: 132mΩ Type of transistor: P-MOSFET x2 Power dissipation: 1.5W Polarisation: unipolar Version: ESD Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -12A |
товару немає в наявності |
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2SC4061KT146N | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346 Case: SC59; SOT346 Frequency: 100MHz Collector-emitter voltage: 300V Current gain: 56...120 Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Mounting: SMD |
на замовлення 1855 шт: термін постачання 21-30 дні (днів) |
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| DAN235ETL | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA Max. off-state voltage: 35V Max. forward voltage: 1V Semiconductor structure: common cathode; double Leakage current: 10nA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: band-switching; RF Mounting: SMD Case: SC75A Capacitance: 1.2pF |
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DAN235UT106 | ROHM SEMICONDUCTOR |
Category: Diodes - others Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode Max. off-state voltage: 35V Max. forward voltage: 1V Semiconductor structure: common cathode; double Leakage current: 10nA Power dissipation: 0.15W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: band-switching; RF Mounting: SMD Case: SC70; SOT323 Capacitance: 1.2pF |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| R6030KNZ4C13 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Pulsed drain current: 90A Power dissipation: 305W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.24Ω Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||
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BC858BWT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
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В кошику од. на суму грн. | ||||||||||||
| BD5229FVE-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.9V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Case: VSOF5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD5229G-2MTR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Operating temperature: -40...105°C Supply voltage: 800mV DC...7V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Threshold on-voltage: 2.9V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BD5229G-TR | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Type of integrated circuit: supervisor circuit Number of channels: 1 Active logical level: low Kind of RESET output: open drain Integrated circuit features: ±1% accuracy Kind of package: reel; tape Threshold on-voltage: 2.9V Manufacturer series: BD52 Kind of integrated circuit: voltage detector Mounting: SMD Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
RSH065N06GZETB | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSH065N06TB1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 6.5A Pulsed drain current: 26A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RSS060P05FRATB | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8 Mounting: SMD Polarisation: unipolar Kind of package: reel; tape Gate charge: 23nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -24A Case: SOP8 Drain-source voltage: -45V Drain current: -6A On-state resistance: 53mΩ Type of transistor: P-MOSFET Power dissipation: 2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DTC044TUBTL | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ Case: SOT323F Mounting: SMD Kind of package: reel; tape Collector-emitter voltage: 50V Current gain: 100...600 Collector current: 60mA Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Base resistor: 47kΩ Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
DTC144ECAT116 | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ Collector current: 0.1A Type of transistor: NPN Power dissipation: 0.35W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ Mounting: SMD Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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| BR25G128FJ-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8 Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25G128FVM-3GTR | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial Mounting: SMD Operating temperature: -40...85°C Case: MSOP8 Supply voltage: 1.6...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 16kx8bit Access time: 5ms Clock frequency: 20MHz Kind of package: reel; tape Kind of interface: serial Memory: 128kb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25G1MF-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial Mounting: SMD Operating temperature: -40...85°C Case: SOP8 Supply voltage: 1.8...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BR25G1MFJ-3GE2 | ROHM SEMICONDUCTOR |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial Mounting: SMD Operating temperature: -40...85°C Case: SOP-J8 Supply voltage: 1.8...5.5V DC Type of integrated circuit: EEPROM memory Interface: SPI Kind of memory: EEPROM Memory organisation: 128kx8bit Access time: 5ms Clock frequency: 10MHz Kind of package: reel; tape Kind of interface: serial Memory: 1Mb EEPROM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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2SD1782KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 120...390 Collector current: 0.5A Type of transistor: NPN Collector-emitter voltage: 80V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 120MHz Case: SC59; SOT346 |
на замовлення 1450 шт: термін постачання 21-30 дні (днів) |
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2SD1781KT146R | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 180...390 Collector current: 0.8A Type of transistor: NPN Collector-emitter voltage: 32V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1781KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 120...270 Collector current: 0.8A Type of transistor: NPN Collector-emitter voltage: 32V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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2SD1782KT146Q | ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346 Mounting: SMD Current gain: 120...270 Collector current: 0.5A Type of transistor: NPN Collector-emitter voltage: 80V Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Frequency: 120MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. |
| UMH11NFHATN |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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В кошику
од. на суму грн.
| EMD3FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
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В кошику
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| EMD9FHAT2R |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SOT563
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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В кошику
од. на суму грн.
| UMD9NFHATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 68
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
товару немає в наявності
В кошику
од. на суму грн.
| UMD3NFHATR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88; SOT363
Current gain: 30
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
товару немає в наявності
В кошику
од. на суму грн.
| RTQ025P02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±12V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RUF025N02FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.5A
Pulsed drain current: 5A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±10V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| RSQ025P03FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -10A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| RTF025N03FRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±12V
On-state resistance: 98mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| RTR025P02FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.5A; Idm: -10A; 1W; TSMT3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.5A
Pulsed drain current: -10A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±12V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| DTC114EEFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.15W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Polarisation: bipolar
Type of transistor: NPN
Power dissipation: 0.15W
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Mounting: SMD
Case: SC75A; SOT416
Frequency: 250MHz
Collector-emitter voltage: 50V
Current gain: 30
Collector current: 0.1A
товару немає в наявності
В кошику
од. на суму грн.
| RTR030N05FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 6.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 12A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 3A; Idm: 12A; 1W; TSMT3
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 1W
Kind of package: reel; tape
Gate charge: 6.2nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 12A
Mounting: SMD
Case: TSMT3
Drain-source voltage: 45V
Drain current: 3A
On-state resistance: 95mΩ
товару немає в наявності
В кошику
од. на суму грн.
| RD3P130SPFRATL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 20W
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -52A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -100V
Drain current: -13A
On-state resistance: 0.23Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; Idm: -52A; 20W
Polarisation: unipolar
Type of transistor: P-MOSFET
Power dissipation: 20W
Kind of package: reel; tape
Gate charge: 40nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -52A
Mounting: SMD
Case: DPAK; TO252
Drain-source voltage: -100V
Drain current: -13A
On-state resistance: 0.23Ω
товару немає в наявності
В кошику
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| BD4958FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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| BD4958G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Manufacturer series: BD49
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: CMOS
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 5.8V
Kind of integrated circuit: voltage detector
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| RB161QS-40T18R |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 3A
Leakage current: 0.1mA
Max. forward impulse current: 7A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD882; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD882
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. load current: 3A
Leakage current: 0.1mA
Max. forward impulse current: 7A
Kind of package: reel; tape
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| BD4836G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...105°C
Case: SSOP5
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BD48
Kind of integrated circuit: voltage detector
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| BU4836G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Operating temperature: -40...125°C
Case: SSOP5
Supply voltage: 700mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 3.6V
Manufacturer series: BU48
Kind of integrated circuit: voltage detector
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| RS1L180GNTB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Drain-source voltage: 60V
Drain current: 68A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: HSOP8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 72A; 39W; HSOP8
Drain-source voltage: 60V
Drain current: 68A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 39W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 72A
Mounting: SMD
Case: HSOP8
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| SML-H12U8TT86C |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; red; SMD; 0805; 25÷40mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0805
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Power: 54mW
Category: SMD colour LEDs
Description: LED; red; SMD; 0805; 25÷40mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: red
Mounting: SMD
Case: 0805
Luminosity: 25...40mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 615...625nm
LED lens: transparent
Front: flat
Power: 54mW
на замовлення 666 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.41 грн |
| 27+ | 14.71 грн |
| 35+ | 11.19 грн |
| 100+ | 7.74 грн |
| 141+ | 6.44 грн |
| 386+ | 6.05 грн |
| BA7807FP-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 7V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 7V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 9.5...22V
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 7V; 1A; TO252-3; SMD; reel,tape; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Voltage drop: 2V
Output voltage: 7V
Output current: 1A
Case: TO252-3
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Number of channels: 1
Input voltage: 9.5...22V
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| UDZLVTE-17110 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 110V; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 110V
Mounting: SMD
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 0.2µA
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| RE1J002YNTCL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 628 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.11 грн |
| 31+ | 12.72 грн |
| 100+ | 7.98 грн |
| 299+ | 3.01 грн |
| BZX84C6V2LYFHT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Application: automotive industry
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| BD82065FVJ-E2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.1A; Ch: 1; N-Channel; SMD; TSSOP-B8J
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| IMX1T110 | |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 0.15A; 300mW; SC74,SOT457
Mounting: SMD
Case: SC74; SOT457
Kind of package: reel; tape
Frequency: 180MHz
Collector-emitter voltage: 50V
Current gain: 120...560
Collector current: 0.15A
Type of transistor: NPN x2
Power dissipation: 0.3W
Polarisation: bipolar
на замовлення 2604 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 14.86 грн |
| 46+ | 8.35 грн |
| 61+ | 6.33 грн |
| 100+ | 5.67 грн |
| 251+ | 3.59 грн |
| 689+ | 3.40 грн |
| RBQ20BM45AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 10Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 10Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBR15BM30AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 7.5Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 7.5Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBR10BM40AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 120µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 40V; 5Ax2
Max. off-state voltage: 40V
Max. forward voltage: 0.62V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 120µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBQ10BM45AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.65V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.65V
Load current: 5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 50A
Leakage current: 70µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBQ15BM45AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 45V; 7.5Ax2
Max. off-state voltage: 45V
Max. forward voltage: 0.59V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBQ20BM65AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 65V; 10Ax2
Max. off-state voltage: 65V
Max. forward voltage: 0.63V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 65V; 10Ax2
Max. off-state voltage: 65V
Max. forward voltage: 0.63V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBR15BM60AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.4mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 7.5Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.58V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.4mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBR20BM30AFHTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 10Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 30V; 10Ax2
Max. off-state voltage: 30V
Max. forward voltage: 0.51V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.3mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBR20BM60AFHTL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 60V; 10Ax2
Max. off-state voltage: 60V
Max. forward voltage: 0.59V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.6mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBQ15BM100AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.71V
Load current: 7.5A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 140µA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RBQ20BM100AFHTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Max. off-state voltage: 100V
Max. forward voltage: 0.69V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 100A
Leakage current: 0.2mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DPAK; SC63; TO252
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| RV2C014BCT2CL |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Mounting: SMD
Case: DFN1006-3
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Mounting: SMD
Case: DFN1006-3
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -1.4A
On-state resistance: 0.7Ω
Type of transistor: P-MOSFET
Power dissipation: 0.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: -2.8A
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| QS8J2TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Case: TSMT8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Version: ESD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -12A
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -4A; Idm: -12A; 1.5W; TSMT8
Case: TSMT8
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -12V
Drain current: -4A
On-state resistance: 132mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 1.5W
Polarisation: unipolar
Version: ESD
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -12A
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| 2SC4061KT146N |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 0.1A; 200mW; SC59,SOT346
Case: SC59; SOT346
Frequency: 100MHz
Collector-emitter voltage: 300V
Current gain: 56...120
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
на замовлення 1855 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 40.44 грн |
| 15+ | 26.98 грн |
| 100+ | 18.01 грн |
| 125+ | 7.28 грн |
| 342+ | 6.90 грн |
| DAN235ETL |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC75A; double,common cathode; 10nA
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC75A
Capacitance: 1.2pF
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| DAN235UT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
Category: Diodes - others
Description: Diode: switching; 35V; 150mW; SC70,SOT323; double,common cathode
Max. off-state voltage: 35V
Max. forward voltage: 1V
Semiconductor structure: common cathode; double
Leakage current: 10nA
Power dissipation: 0.15W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: band-switching; RF
Mounting: SMD
Case: SC70; SOT323
Capacitance: 1.2pF
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| R6030KNZ4C13 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 305W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 90A; 305W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 90A
Power dissipation: 305W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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| BC858BWT106 |
|
Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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| BD5229FVE-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: VSOF5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: VSOF5
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| BD5229G-2MTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 800mV DC...7V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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| BD5229G-TR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Type of integrated circuit: supervisor circuit
Number of channels: 1
Active logical level: low
Kind of RESET output: open drain
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Threshold on-voltage: 2.9V
Manufacturer series: BD52
Kind of integrated circuit: voltage detector
Mounting: SMD
Case: SSOP5
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| RSH065N06GZETB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSH065N06TB1 |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.5A; Idm: 26A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 6.5A
Pulsed drain current: 26A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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| RSS060P05FRATB |
|
Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -24A
Case: SOP8
Drain-source voltage: -45V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -45V; -6A; Idm: -24A; 2W; SOP8
Mounting: SMD
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 23nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -24A
Case: SOP8
Drain-source voltage: -45V
Drain current: -6A
On-state resistance: 53mΩ
Type of transistor: P-MOSFET
Power dissipation: 2W
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| DTC044TUBTL |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 60mA; 200mW; SOT323F; 47kΩ
Case: SOT323F
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 50V
Current gain: 100...600
Collector current: 60mA
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Base resistor: 47kΩ
Frequency: 250MHz
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| DTC144ECAT116 |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 350mW; SOT23; R1: 47kΩ
Collector current: 0.1A
Type of transistor: NPN
Power dissipation: 0.35W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Mounting: SMD
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
на замовлення 70 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.08 грн |
| 70+ | 5.36 грн |
| BR25G128FJ-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; SOP-J8
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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| BR25G128FVM-3GTR |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 20MHz; MSOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: MSOP8
Supply voltage: 1.6...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 16kx8bit
Access time: 5ms
Clock frequency: 20MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 128kb EEPROM
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| BR25G1MF-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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| BR25G1MFJ-3GE2 |
|
Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; SPI; 128kx8bit; 10MHz; SOP-J8; serial
Mounting: SMD
Operating temperature: -40...85°C
Case: SOP-J8
Supply voltage: 1.8...5.5V DC
Type of integrated circuit: EEPROM memory
Interface: SPI
Kind of memory: EEPROM
Memory organisation: 128kx8bit
Access time: 5ms
Clock frequency: 10MHz
Kind of package: reel; tape
Kind of interface: serial
Memory: 1Mb EEPROM
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| 2SD1782KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...390
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...390
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
на замовлення 1450 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.41 грн |
| 23+ | 17.40 грн |
| 40+ | 12.87 грн |
| 100+ | 10.65 грн |
| 162+ | 5.59 грн |
| 444+ | 5.29 грн |
| 2SD1781KT146R |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 180...390
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
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| 2SD1781KT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 32V; 0.8A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.8A
Type of transistor: NPN
Collector-emitter voltage: 32V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 150MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
| 2SD1782KT146Q |
|
Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 200mW; SC59,SOT346
Mounting: SMD
Current gain: 120...270
Collector current: 0.5A
Type of transistor: NPN
Collector-emitter voltage: 80V
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Frequency: 120MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.