Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104261) > Сторінка 1737 з 1738
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RV2C010UNT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RV2C014BCT2CL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -2.8A Power dissipation: 0.6W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RV2C002UNT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Pulsed drain current: 0.6A Power dissipation: 0.1W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 11.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB088BM100FHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 5µA Max. forward voltage: 0.87V Load current: 5A x2 Max. forward impulse current: 50A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB098BM100FHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 3µA Max. forward voltage: 0.77V Load current: 3A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RBQ15BM100AFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 140µA Max. forward voltage: 0.71V Load current: 7.5A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RBQ20BM100AFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.2mA Max. forward voltage: 0.69V Load current: 10A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SCT3022KLGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SCT3022KLHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS1E280BNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 94nC On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 30W Drain current: 80A Pulsed drain current: 112A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS1E280GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 31W Drain current: 80A Pulsed drain current: 112A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SC4774T106S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC70; SOT323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC3906KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC4713KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SD1757KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 0.5A Power dissipation: 0.2W Collector-emitter voltage: 15V Current gain: 270...560 Frequency: 150MHz Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9778HFP-TR | ROHM SEMICONDUCTOR |
![]() Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Mounting: SMD Output voltage: 1...35V DC Output current: 2A Input voltage: 7...35V DC Frequency: 500MHz Type of integrated circuit: PMIC Topology: buck Kind of integrated circuit: DC/DC converter Case: HRP7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RSR010N10HZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX84C10VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 10V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C10VLYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOP8 Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -10A Gate charge: 39nC On-state resistance: 12.6mΩ Power dissipation: 2W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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UMG8NTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common emitter Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
на замовлення 2595 шт: термін постачання 21-30 дні (днів) |
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BU9880GUL-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial Supply voltage: 1.7...5.5V DC Operating temperature: -40...85°C Kind of interface: serial Access time: 5ms Memory: 64kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 8kx8bit Kind of package: reel; tape Case: VCSP50L1 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Case: SOT23 Max. forward impulse current: 1.7A Max. off-state voltage: 13V Breakdown voltage: 16V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Kind of package: reel; tape Type of diode: TVS array Mounting: SMD Leakage current: 50nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C13VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6.5% Zener voltage: 13V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 120mA x2 Semiconductor structure: common anode; double Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Max. load current: 120mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B10VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 10V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B15VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 15V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B16VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 16V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B18VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 18V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B24VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 24V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84B5V1LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 5.1V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 2µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C27VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 27V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C36VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 36V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX84C3V6LYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 3.6V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 5µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
BD4936G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC Integrated circuit features: ±1% accuracy Kind of package: reel; tape Manufacturer series: BD49 Case: SSOP5 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 3.6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4936G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Integrated circuit features: ±1% accuracy Kind of package: reel; tape Manufacturer series: BU49 Case: SSOP5 Kind of RESET output: CMOS Active logical level: low Mounting: SMD Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 3.6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4926G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Mounting: SMD Integrated circuit features: ±1% accuracy Manufacturer series: BU49 Kind of package: reel; tape Kind of RESET output: CMOS Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 2.6V Case: SSOP5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BH3547F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: SOP8 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 77mW Number of channels: 2 Supply voltage: 4.5...6.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BH3544F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: SOP8 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 62mW Number of channels: 2 Supply voltage: 2.8...6.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88400GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88410GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Gain: 1V/V Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BD88415GUL-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC Type of integrated circuit: audio amplifier Mounting: SMD Case: VCSP50L2 Integrated circuit features: headphone driver Kind of package: reel; tape Amplifier class: AB Output power: 80mW Gain: 1.5V/V Number of channels: 2 Supply voltage: 2.4...5.5V DC Impedance: 16Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTC013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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DTA013ZMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 30 Collector-emitter voltage: 50V Base resistor: 1kΩ Base-emitter resistor: 10kΩ Frequency: 250MHz |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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SML-P11MTT86R | ROHM SEMICONDUCTOR |
![]() Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA Power: 54mW Operating voltage: 1.9V DC Front: flat Type of diode: LED Mounting: SMD Manufacturer series: PicoLED™ LED lens: transparent LED colour: yellow green Wavelength: 466...574nm LED current: 1mA Dimensions: 1x0.6x0.2mm Luminosity: 1...2.1mcd Case: 0402 |
на замовлення 3668 шт: термін постачання 21-30 дні (днів) |
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DTA123YCAT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT23 Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 866 шт: термін постачання 21-30 дні (днів) |
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DTA123JMT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SOT723 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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DTA123YKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 33 Collector-emitter voltage: 50V Base-emitter resistor: 10kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA123EETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123EKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 20 Collector-emitter voltage: 50V Base-emitter resistor: 2.2kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
DTA123JEFRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DTA123JETL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC75A; SOT416 Collector current: 0.1A Power dissipation: 0.15W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DTA123JKAT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Mounting: SMD Kind of transistor: BRT Type of transistor: PNP Case: SC59; SOT346 Collector current: 0.1A Power dissipation: 0.2W Current gain: 80 Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 2.2kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA8391G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA Kind of package: reel; tape Type of integrated circuit: comparator Case: SSOP5 Mounting: SMT Operating temperature: -40...85°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 15mV Number of comparators: 1 Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 890 шт: термін постачання 21-30 дні (днів) |
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BA10393F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector Type of integrated circuit: comparator Number of comparators: 2 Mounting: SMT Case: SO8 Operating temperature: -40...85°C Input offset voltage: 5mV Kind of package: reel; tape Kind of output: open collector Input offset current: 50nA Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 2115 шт: термін постачання 21-30 дні (днів) |
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SCS308AHGC9 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.71V Max. forward impulse current: 250A Leakage current: 0.16mA Kind of package: tube Max. load current: 36A Power dissipation: 57W |
на замовлення 751 шт: термін постачання 21-30 дні (днів) |
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BA4584FV-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Case: SSOP-B14 Operating temperature: -40...85°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA4584YFV-MGE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape Kind of package: reel; tape Type of integrated circuit: operational amplifier Mounting: SMT Number of channels: 4 Case: SSOP-B14 Operating temperature: -40...105°C Input offset current: 200nA Input bias current: 0.5µA Input offset voltage: 3mV Voltage supply range: ± 2...16V DC; 4...32V DC Slew rate: 5V/μs Bandwidth: 10MHz |
товару немає в наявності |
В кошику од. на суму грн. |
RV2C010UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
RV2C014BCT2CL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
RV2C002UNT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
RB088BM100FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
товару немає в наявності
В кошику
од. на суму грн.
RB098BM100FHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
товару немає в наявності
В кошику
од. на суму грн.
RBQ15BM100AFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
товару немає в наявності
В кошику
од. на суму грн.
RBQ20BM100AFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
товару немає в наявності
В кошику
од. на суму грн.
SCT3022KLGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SCT3022KLHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
RS1E280BNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
товару немає в наявності
В кошику
од. на суму грн.
RS1E280GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
товару немає в наявності
В кошику
од. на суму грн.
2SC4774T106S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
товару немає в наявності
В кошику
од. на суму грн.
2SC3906KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
товару немає в наявності
В кошику
од. на суму грн.
2SC4713KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
товару немає в наявності
В кошику
од. на суму грн.
2SD1757KT146S |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
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BD9778HFP-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
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RSR010N10FHATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR010N10HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
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BZX84C10VLYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
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RRS100P03HZGTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
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UMG8NTR |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
на замовлення 2595 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.51 грн |
43+ | 9.33 грн |
57+ | 6.96 грн |
100+ | 6.17 грн |
285+ | 3.24 грн |
784+ | 3.06 грн |
BU9880GUL-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
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BAV99HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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MMBZ16VALFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
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BZX84C13VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BAS40-06HYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
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BZX84B10VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
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BZX84B15VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84B16VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84B18VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84B24VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84B5V1LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 5.1V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 5.1V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 5.1V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
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BZX84C27VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 27V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 27V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84C36VLYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 36V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 36V; SMD; reel,tape; SOT23; single diode; 100nA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 36V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84C3V6LYFHT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 3.6V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.6V; SMD; reel,tape; SOT23; single diode; 5uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 3.6V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 5µA
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BD4936G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BD49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.6V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 950mVDC÷10VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BD49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.6V
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BU4936G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BU49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 3.6V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Integrated circuit features: ±1% accuracy
Kind of package: reel; tape
Manufacturer series: BU49
Case: SSOP5
Kind of RESET output: CMOS
Active logical level: low
Mounting: SMD
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 3.6V
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BU4926G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Integrated circuit features: ±1% accuracy
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Mounting: SMD
Integrated circuit features: ±1% accuracy
Manufacturer series: BU49
Kind of package: reel; tape
Kind of RESET output: CMOS
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Case: SSOP5
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BH3547F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 77mW
Number of channels: 2
Supply voltage: 4.5...6.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 77mW; headphone driver; 4.5÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 77mW
Number of channels: 2
Supply voltage: 4.5...6.5V DC
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BH3544F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 62mW
Number of channels: 2
Supply voltage: 2.8...6.5V DC
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 62mW; headphone driver; 2.8÷6.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: SOP8
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 62mW
Number of channels: 2
Supply voltage: 2.8...6.5V DC
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BD88400GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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BD88410GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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BD88415GUL-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1.5V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Pout: 80mW; headphone driver; 2.4÷5.5VDC
Type of integrated circuit: audio amplifier
Mounting: SMD
Case: VCSP50L2
Integrated circuit features: headphone driver
Kind of package: reel; tape
Amplifier class: AB
Output power: 80mW
Gain: 1.5V/V
Number of channels: 2
Supply voltage: 2.4...5.5V DC
Impedance: 16Ω
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DTC013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 15.68 грн |
DTA013ZMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 1kΩ
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 30
Collector-emitter voltage: 50V
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Frequency: 250MHz
на замовлення 975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
72+ | 5.91 грн |
120+ | 3.29 грн |
170+ | 2.31 грн |
500+ | 1.91 грн |
594+ | 1.55 грн |
SML-P11MTT86R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA
Power: 54mW
Operating voltage: 1.9V DC
Front: flat
Type of diode: LED
Mounting: SMD
Manufacturer series: PicoLED™
LED lens: transparent
LED colour: yellow green
Wavelength: 466...574nm
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Luminosity: 1...2.1mcd
Case: 0402
Category: SMD colour LEDs
Description: LED; yellow green; SMD; 0402; 1÷2.1mcd; 1.9VDC; 1x0.6x0.2mm; 1mA
Power: 54mW
Operating voltage: 1.9V DC
Front: flat
Type of diode: LED
Mounting: SMD
Manufacturer series: PicoLED™
LED lens: transparent
LED colour: yellow green
Wavelength: 466...574nm
LED current: 1mA
Dimensions: 1x0.6x0.2mm
Luminosity: 1...2.1mcd
Case: 0402
на замовлення 3668 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.11 грн |
25+ | 15.84 грн |
29+ | 13.57 грн |
100+ | 8.08 грн |
134+ | 6.90 грн |
369+ | 6.51 грн |
1000+ | 6.19 грн |
DTA123YCAT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT23
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 866 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.44 грн |
87+ | 4.55 грн |
129+ | 3.06 грн |
500+ | 2.41 грн |
557+ | 1.65 грн |
DTA123JMT2L |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SOT723; R1: 2.2kΩ
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SOT723
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.60 грн |
97+ | 4.08 грн |
132+ | 2.99 грн |
446+ | 2.07 грн |
DTA123YKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 33
Collector-emitter voltage: 50V
Base-emitter resistor: 10kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DTA123EETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DTA123EKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 20
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 20
Collector-emitter voltage: 50V
Base-emitter resistor: 2.2kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DTA123JEFRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DTA123JETL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 150mW; SC75A,SOT416
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC75A; SOT416
Collector current: 0.1A
Power dissipation: 0.15W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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DTA123JKAT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Mounting: SMD
Kind of transistor: BRT
Type of transistor: PNP
Case: SC59; SOT346
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 80
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 2.2kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
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BA8391G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SSOP5
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 15mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; Cmp: 1; SMT; SSOP5; reel,tape; Iio: 200nA; IB: 0.5uA
Kind of package: reel; tape
Type of integrated circuit: comparator
Case: SSOP5
Mounting: SMT
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 15mV
Number of comparators: 1
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 890 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.47 грн |
18+ | 22.58 грн |
25+ | 20.23 грн |
100+ | 9.25 грн |
274+ | 8.78 грн |
BA10393F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; Cmp: 2; SMT; SO8; reel,tape; OUT: open collector
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 2115 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.56 грн |
37+ | 25.25 грн |
100+ | 22.98 грн |
SCS308AHGC9 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220AC; Ir: 160uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.71V
Max. forward impulse current: 250A
Leakage current: 0.16mA
Kind of package: tube
Max. load current: 36A
Power dissipation: 57W
на замовлення 751 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 263.48 грн |
5+ | 219.56 грн |
6+ | 175.65 грн |
15+ | 166.24 грн |
BA4584FV-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...85°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
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BA4584YFV-MGE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 4; SSOP-B14; reel,tape
Kind of package: reel; tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 4
Case: SSOP-B14
Operating temperature: -40...105°C
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 3mV
Voltage supply range: ± 2...16V DC; 4...32V DC
Slew rate: 5V/μs
Bandwidth: 10MHz
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