Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104261) > Сторінка 1736 з 1738
Фото | Назва | Виробник | Інформація |
Доступність |
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RBR3MM40BTFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Leakage current: 0.1mA Max. forward voltage: 0.58V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 30A Case: SOD123F |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IMB10AT110 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457 Type of transistor: PNP x2 Collector current: 0.1A Power dissipation: 0.3W Collector-emitter voltage: 50V Current gain: 80 Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Frequency: 250MHz Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Case: SC74; SOT457 Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BA6506F-GE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC Type of integrated circuit: driver Case: SOP8 Kind of package: reel; tape Mounting: SMT Operating temperature: -40...100°C Number of channels: 2 Operating voltage: 4...28V DC Kind of integrated circuit: brushless motor controller |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BA2901F-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA Type of integrated circuit: comparator Case: SOP14 Mounting: SMT Operating temperature: -40...125°C Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BA2901SF-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA Type of integrated circuit: comparator Case: SOP14 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 0.5µA Input offset current: 200nA Input offset voltage: 15mV Voltage supply range: ± 1...18V DC; 2...36V DC Number of comparators: 4 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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DTC114TCAHZGT116 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT23 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Power dissipation: 0.2W Frequency: 250MHz Current gain: 100...600 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM30ATR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.48V Leakage current: 50µA Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM30ATFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.48V Leakage current: 50µA Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM40ATFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.52V Leakage current: 50µA Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM40ATR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.52V Leakage current: 50µA Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM60ATFTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 75µA Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RBR1MM60ATR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.53V Leakage current: 75µA Max. forward impulse current: 20A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
RCX220N25 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 22A Pulsed drain current: 88A Power dissipation: 61W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BA5954FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: driver; motor controller; HSOP-M28; Ch: 2; 4.3÷13.2VDC Type of integrated circuit: driver Kind of integrated circuit: motor controller Case: HSOP-M28 Number of channels: 2 Mounting: SMT Operating temperature: -35...85°C Operating voltage: 4.3...13.2V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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RB160M-30TR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.48V Leakage current: 50µA Max. forward impulse current: 30A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS210AMC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.55V Max. load current: 28A Max. forward impulse current: 150A Power dissipation: 34W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BM1Z001FJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); 10÷28VDC Type of integrated circuit: supervisor circuit Kind of integrated circuit: power on reset monitor (PoR) Active logical level: high Supply voltage: 10...28V DC Case: SOP-J7S Operating temperature: -40...105°C Mounting: SMD Threshold on-voltage: 0V Kind of package: reel; tape Number of channels: 1 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSF015N06FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 45V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSF015N06TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 0.8W Case: TUMT3 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSQ015N06TR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.5A Pulsed drain current: 6A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: SMD Gate charge: 2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSQ035N06HZGTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 87mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SB1695KT146 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346 Mounting: SMD Type of transistor: PNP Power dissipation: 0.2W Collector current: 1.5A Collector-emitter voltage: 30V Current gain: 270...680 Frequency: 280MHz Kind of package: reel; tape Polarisation: bipolar Case: SC59; SOT346 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
2SB1695TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96 Mounting: SMD Type of transistor: PNP Power dissipation: 0.5W Collector current: 1.5A Collector-emitter voltage: 30V Current gain: 270...680 Frequency: 280MHz Kind of package: reel; tape Polarisation: bipolar Case: SC96 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SB1697T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89 Mounting: SMD Type of transistor: PNP Power dissipation: 0.5W Collector current: 2A Collector-emitter voltage: 12V Current gain: 270...680 Frequency: 360MHz Kind of package: reel; tape Polarisation: bipolar Case: SC62; SOT89 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC857BU3HZGT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 210...480 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SAR502U3HZGT106 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 200...500 Mounting: SMD Kind of package: reel; tape Frequency: 520MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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2SC4081U3HZGT106Q | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.15A Power dissipation: 0.2W Case: SC70; SOT323 Current gain: 120...270 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCS110AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 160A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 83W Max. load current: 42A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RF071MM2STR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 0.7A; 25ns; SOD123F; Ufmax: 0.85V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Load current: 0.7A Max. forward voltage: 0.85V Max. forward impulse current: 15A Max. off-state voltage: 200V Reverse recovery time: 25ns |
на замовлення 5021 шт: термін постачання 21-30 дні (днів) |
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RF081MM2STR | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Load current: 0.8A Max. forward voltage: 0.98V Max. forward impulse current: 20A Max. off-state voltage: 200V Reverse recovery time: 25ns |
на замовлення 1577 шт: термін постачання 21-30 дні (днів) |
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RF601BM2DTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A Type of diode: rectifying Mounting: SMD Kind of package: reel; tape Case: DPAK Semiconductor structure: common cathode; double Load current: 6A Max. forward voltage: 0.93V Max. forward impulse current: 60A Max. off-state voltage: 200V Reverse recovery time: 25ns |
на замовлення 1443 шт: термін постачання 21-30 дні (днів) |
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BD4826G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Case: SSOP5 Mounting: SMD Kind of package: reel; tape Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 2.6V Integrated circuit features: ±1% accuracy Manufacturer series: BD48 Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Active logical level: low Kind of RESET output: open drain Operating temperature: -40...105°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BD4825G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; reel,tape Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Kind of package: reel; tape Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy Active logical level: low Kind of RESET output: open drain Manufacturer series: BD48 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BU2508FV-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C Power dissipation: 0.7W Case: SSOP-B14 Mounting: SMD Operating temperature: -30...85°C DC supply current: 850mA Max DNL: ±1LSB Max INL: ±3.5LSB Number of channels: 4 Operating voltage: 4.5...5.5V Converter resolution: 10bit Interface: 3-wire Frequency: 10MHz Type of integrated circuit: D/A converter Integrated circuit features: rail-to-rail |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BU4818F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Supply voltage: 700mV DC...7V DC Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 1.8V Case: SOP4 Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BU4818G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 700mV DC...7V DC Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 1.8V Case: SSOP5 Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
R6015ENXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RD3G500GNTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 On-state resistance: 6.3mΩ Case: DPAK; TO252 Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 31nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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KDZVTR10B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 2497 шт: термін постачання 21-30 дні (днів) |
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RTF025N03FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Gate charge: 3.7nC On-state resistance: 98mΩ Drain current: 2.5A Power dissipation: 0.8W Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RTF025N03TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Gate charge: 3.7nC On-state resistance: 98mΩ Drain current: 2.5A Power dissipation: 0.8W Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V Type of transistor: N-MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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2SCR573D3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Collector current: 3A Power dissipation: 10W Current gain: 180...450 Collector-emitter voltage: 50V Frequency: 320MHz Polarisation: bipolar Type of transistor: NPN |
на замовлення 1694 шт: термін постачання 21-30 дні (днів) |
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BR24L01AF-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8 Case: SOP8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BR24L01AFJ-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8 Case: SOP-J8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BR24L01AFVM-WTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8 Case: MSOP8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BR24L01AFVT-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial Case: TSSOP-B8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BD45342G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Kind of package: reel; tape Integrated circuit features: Counter Timer Built-in Case: SSOP5 Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 3.4V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SML-H12P8TT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 2914 шт: термін постачання 21-30 дні (днів) |
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SML-H12P8TT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
на замовлення 3012 шт: термін постачання 21-30 дні (днів) |
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RB530CM-30T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 0.5A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 0.3µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.46V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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RB530CM-60T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RJP020N06T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RHP020N06T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RSR020N06HZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SCT3022ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SCT3030ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
2SC4725TLP | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.15W Collector-emitter voltage: 20V Current gain: 82...180 Frequency: 1.5GHz Polarisation: bipolar Type of transistor: NPN |
товару немає в наявності |
В кошику од. на суму грн. |
RBR3MM40BTFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Case: SOD123F
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 3A; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Leakage current: 0.1mA
Max. forward voltage: 0.58V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 30A
Case: SOD123F
товару немає в наявності
В кошику
од. на суму грн.
IMB10AT110 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC74; SOT457
Mounting: SMD
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; SC74,SOT457
Type of transistor: PNP x2
Collector current: 0.1A
Power dissipation: 0.3W
Collector-emitter voltage: 50V
Current gain: 80
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Kind of package: reel; tape
Polarisation: bipolar
Kind of transistor: BRT
Case: SC74; SOT457
Mounting: SMD
товару немає в наявності
В кошику
од. на суму грн.
BA6506F-GE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC
Type of integrated circuit: driver
Case: SOP8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...100°C
Number of channels: 2
Operating voltage: 4...28V DC
Kind of integrated circuit: brushless motor controller
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SOP8; Ch: 2; 4÷28VDC
Type of integrated circuit: driver
Case: SOP8
Kind of package: reel; tape
Mounting: SMT
Operating temperature: -40...100°C
Number of channels: 2
Operating voltage: 4...28V DC
Kind of integrated circuit: brushless motor controller
товару немає в наявності
В кошику
од. на суму грн.
BA2901F-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 4
Category: SMD comparators
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...125°C
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 4
товару немає в наявності
В кошику
од. на суму грн.
BA2901SF-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 4
Category: SMD comparators
Description: IC: comparator; Cmp: 4; SMT; SOP14; reel,tape; Iio: 200nA; IB: 0.5uA
Type of integrated circuit: comparator
Case: SOP14
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 0.5µA
Input offset current: 200nA
Input offset voltage: 15mV
Voltage supply range: ± 1...18V DC; 2...36V DC
Number of comparators: 4
товару немає в наявності
В кошику
од. на суму грн.
DTC114TCAHZGT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
Current gain: 100...600
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Power dissipation: 0.2W
Frequency: 250MHz
Current gain: 100...600
товару немає в наявності
В кошику
од. на суму грн.
RBR1MM30ATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
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В кошику
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RBR1MM30ATFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
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В кошику
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RBR1MM40ATFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 50µA
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 50µA
Max. forward impulse current: 20A
Kind of package: reel; tape
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В кошику
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RBR1MM40ATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 50µA
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Leakage current: 50µA
Max. forward impulse current: 20A
Kind of package: reel; tape
товару немає в наявності
В кошику
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RBR1MM60ATFTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 75µA
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 75µA
Max. forward impulse current: 20A
Kind of package: reel; tape
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В кошику
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RBR1MM60ATR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 75µA
Max. forward impulse current: 20A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.53V
Leakage current: 75µA
Max. forward impulse current: 20A
Kind of package: reel; tape
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В кошику
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RCX220N25 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 22A; Idm: 88A; 61W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 22A
Pulsed drain current: 88A
Power dissipation: 61W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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BA5954FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Motor and PWM drivers
Description: IC: driver; motor controller; HSOP-M28; Ch: 2; 4.3÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: HSOP-M28
Number of channels: 2
Mounting: SMT
Operating temperature: -35...85°C
Operating voltage: 4.3...13.2V DC
Category: Motor and PWM drivers
Description: IC: driver; motor controller; HSOP-M28; Ch: 2; 4.3÷13.2VDC
Type of integrated circuit: driver
Kind of integrated circuit: motor controller
Case: HSOP-M28
Number of channels: 2
Mounting: SMT
Operating temperature: -35...85°C
Operating voltage: 4.3...13.2V DC
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RB160M-30TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Leakage current: 50µA
Max. forward impulse current: 30A
Kind of package: reel; tape
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SCS210AMC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 28A
Max. forward impulse current: 150A
Power dissipation: 34W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; 34W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.55V
Max. load current: 28A
Max. forward impulse current: 150A
Power dissipation: 34W
Kind of package: tube
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BM1Z001FJ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 10÷28VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: high
Supply voltage: 10...28V DC
Case: SOP-J7S
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 0V
Kind of package: reel; tape
Number of channels: 1
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); 10÷28VDC
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: high
Supply voltage: 10...28V DC
Case: SOP-J7S
Operating temperature: -40...105°C
Mounting: SMD
Threshold on-voltage: 0V
Kind of package: reel; tape
Number of channels: 1
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RSF015N06FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 45V; 1.5A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 45V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSF015N06TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 800mW; TUMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 0.8W
Case: TUMT3
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSQ015N06TR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.5A; Idm: 6A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 1.5A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 2nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSQ035N06HZGTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.5A; Idm: 14A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 87mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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2SB1695KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC59; SOT346
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 200mW; SC59,SOT346
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.2W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC59; SOT346
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2SB1695TL |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC96
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1.5A; 500mW; SC96
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 1.5A
Collector-emitter voltage: 30V
Current gain: 270...680
Frequency: 280MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC96
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2SB1697T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 12V
Current gain: 270...680
Frequency: 360MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC62; SOT89
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2A; 500mW; SC62,SOT89
Mounting: SMD
Type of transistor: PNP
Power dissipation: 0.5W
Collector current: 2A
Collector-emitter voltage: 12V
Current gain: 270...680
Frequency: 360MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: SC62; SOT89
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BC857BU3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 210...480
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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2SAR502U3HZGT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.5A; 200mW; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...500
Mounting: SMD
Kind of package: reel; tape
Frequency: 520MHz
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2SC4081U3HZGT106Q |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 120...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
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SCS110AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 160A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 83W
Max. load current: 42A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 160A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 83W
Max. load current: 42A
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RF071MM2STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.7A; 25ns; SOD123F; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Load current: 0.7A
Max. forward voltage: 0.85V
Max. forward impulse current: 15A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.7A; 25ns; SOD123F; Ufmax: 0.85V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Load current: 0.7A
Max. forward voltage: 0.85V
Max. forward impulse current: 15A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 5021 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.56 грн |
21+ | 19.06 грн |
25+ | 15.92 грн |
50+ | 13.96 грн |
100+ | 12.15 грн |
117+ | 7.84 грн |
322+ | 7.45 грн |
3000+ | 7.14 грн |
RF081MM2STR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Load current: 0.8A
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 0.8A; 25ns; SOD123F; Ufmax: 0.98V
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Load current: 0.8A
Max. forward voltage: 0.98V
Max. forward impulse current: 20A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 1577 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.09 грн |
19+ | 21.33 грн |
25+ | 16.86 грн |
50+ | 13.96 грн |
100+ | 11.45 грн |
123+ | 7.45 грн |
338+ | 7.06 грн |
1000+ | 6.74 грн |
RF601BM2DTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Semiconductor structure: common cathode; double
Load current: 6A
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 6A; 25ns; DPAK; Ufmax: 0.93V; Ifsm: 60A
Type of diode: rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DPAK
Semiconductor structure: common cathode; double
Load current: 6A
Max. forward voltage: 0.93V
Max. forward impulse current: 60A
Max. off-state voltage: 200V
Reverse recovery time: 25ns
на замовлення 1443 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 62.49 грн |
11+ | 38.27 грн |
25+ | 30.43 грн |
33+ | 28.43 грн |
89+ | 26.87 грн |
500+ | 25.88 грн |
BD4826G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Kind of RESET output: open drain
Operating temperature: -40...105°C
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 2.6V
Integrated circuit features: ±1% accuracy
Manufacturer series: BD48
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Active logical level: low
Kind of RESET output: open drain
Operating temperature: -40...105°C
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BD4825G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; reel,tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Kind of package: reel; tape
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Active logical level: low
Kind of RESET output: open drain
Manufacturer series: BD48
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; reel,tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Kind of package: reel; tape
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Active logical level: low
Kind of RESET output: open drain
Manufacturer series: BD48
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BU2508FV-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Operating temperature: -30...85°C
DC supply current: 850mA
Max DNL: ±1LSB
Max INL: ±3.5LSB
Number of channels: 4
Operating voltage: 4.5...5.5V
Converter resolution: 10bit
Interface: 3-wire
Frequency: 10MHz
Type of integrated circuit: D/A converter
Integrated circuit features: rail-to-rail
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Operating temperature: -30...85°C
DC supply current: 850mA
Max DNL: ±1LSB
Max INL: ±3.5LSB
Number of channels: 4
Operating voltage: 4.5...5.5V
Converter resolution: 10bit
Interface: 3-wire
Frequency: 10MHz
Type of integrated circuit: D/A converter
Integrated circuit features: rail-to-rail
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BU4818F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SOP4
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SOP4
Integrated circuit features: ±1% accuracy
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BU4818G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SSOP5
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SSOP5
Integrated circuit features: ±1% accuracy
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R6015ENXC7G |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
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RD3G500GNTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
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KDZVTR10B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 2497 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 25.33 грн |
21+ | 18.98 грн |
24+ | 16.78 грн |
50+ | 12.62 грн |
100+ | 11.14 грн |
158+ | 5.80 грн |
434+ | 5.49 грн |
RTF025N03FRATL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
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RTF025N03TL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
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2SCR573D3TL1 |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 10W
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 10W
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Polarisation: bipolar
Type of transistor: NPN
на замовлення 1694 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 65.02 грн |
10+ | 51.52 грн |
50+ | 18.43 грн |
137+ | 17.41 грн |
BR24L01AF-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
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BR24L01AFJ-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8
Case: SOP-J8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8
Case: SOP-J8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
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BR24L01AFVM-WTR |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
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BR24L01AFVT-WE2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial
Case: TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial
Case: TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
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BD45342G-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.4V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.4V
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SML-H12P8TT86C |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 2914 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.96 грн |
27+ | 14.74 грн |
32+ | 12.55 грн |
100+ | 9.80 грн |
141+ | 6.59 грн |
386+ | 6.19 грн |
SML-H12P8TT86 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
на замовлення 3012 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.87 грн |
21+ | 19.21 грн |
50+ | 13.88 грн |
100+ | 12.00 грн |
133+ | 6.98 грн |
365+ | 6.59 грн |
RB530CM-30T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
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RB530CM-60T2R |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
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RJP020N06FRAT100 |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RJP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RHP020N06T100 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06FRATL |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06HZGTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT3022ALGC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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SCT3022ALHRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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SCT3030ARC14 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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2SC4725TLP |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
товару немає в наявності
В кошику
од. на суму грн.