Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104258) > Сторінка 1738 з 1738
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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EDZVT2R3.3B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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KDZVTFTR3.3B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA Type of diode: Zener Power dissipation: 1W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 80µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
UDZVTE-173.3B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
EDZVFHT2R3.3B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 3.3V Mounting: SMD Kind of package: reel; tape Case: SC79; SOD523 Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
UDZVFHTE-173.3B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC90A; SOD323F Semiconductor structure: single diode Leakage current: 20µA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RQ3E150GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 60A Power dissipation: 17W Case: HSMT8 Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: SMD Gate charge: 15.3nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RS1E150GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 60A Power dissipation: 22W Case: HSOP8 Gate-source voltage: ±20V On-state resistance: 13.3mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SCS240AE2GC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 160A Max. forward impulse current: 520A Leakage current: 0.4mA Power dissipation: 270W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SCS240AE2HRC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.63V Max. load current: 160A Max. forward impulse current: 520A Leakage current: 0.4mA Power dissipation: 270W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SCS240KE2C | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 160A Max. forward impulse current: 620A Power dissipation: 420W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
SCS240KE2GC11 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A x2 Semiconductor structure: common cathode; double Case: TO247-3 Max. forward voltage: 1.9V Max. load current: 160A Max. forward impulse current: 620A Leakage current: 0.4mA Power dissipation: 420W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BA78M18FP-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: voltage regulator Kind of package: reel; tape Output current: 0.5A Number of channels: 1 Voltage drop: 2V Kind of voltage regulator: fixed Input voltage: 21...33V Output voltage: 18V Case: TO252-3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EDZVT2R5.1B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA Type of diode: Zener Power dissipation: 0.15W Zener voltage: 5.1V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SC79; SOD523F Semiconductor structure: single diode Leakage current: 2µA |
на замовлення 6440 шт: термін постачання 21-30 дні (днів) |
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CSL1901DW1 | ROHM SEMICONDUCTOR |
![]() Description: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused Mounting: SMD Type of diode: LED LED colour: orange Wavelength: 605nm LED current: 2mA Luminosity: 9.4mcd LED lens: diffused; white Front: flat |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BV1LB028FPJ-CE1 | ROHM SEMICONDUCTOR |
![]() Description: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V Mounting: SMD Kind of integrated circuit: low-side Type of integrated circuit: power switch Protection: over current OCP; overheating OTP; undervoltage UVP Operating temperature: -40...150°C On-state resistance: 85mΩ Number of channels: 1 Output current: 2.4A Supply voltage: 3...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAV99HYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RUQ050N02FRATR | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5A Pulsed drain current: 10A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±10V On-state resistance: 80mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
BU4312F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC Case: SSOP5 Mounting: SMD Kind of package: reel; tape Active logical level: low Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Operating temperature: -40...125°C Supply voltage: 700mV DC...7V DC Number of channels: 1 Threshold on-voltage: 1.2V Integrated circuit features: ±1% accuracy Manufacturer series: BU43 Kind of RESET output: CMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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2SC3906KT146R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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BD5227FVE-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1 Type of integrated circuit: supervisor circuit Case: VSOF5 Supply voltage: 950mV DC...10V DC Mounting: SMD Manufacturer series: BD52 Active logical level: low Kind of RESET output: open drain Kind of package: reel; tape Kind of integrated circuit: voltage detector Operating temperature: -40...105°C Number of channels: 1 Threshold on-voltage: 2.7V Integrated circuit features: ±1% accuracy |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RXH125N03TB1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 36A Power dissipation: 2W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 12.7nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RQ3E180AJTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Gate charge: 39nC On-state resistance: 5.8mΩ Power dissipation: 30W Drain current: 30A Pulsed drain current: 72A Gate-source voltage: ±12V Drain-source voltage: 30V Kind of channel: enhancement Case: HSMT8 |
на замовлення 1196 шт: термін постачання 21-30 дні (днів) |
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BD9G341AEFJ-E2 | ROHM SEMICONDUCTOR |
![]() Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: HTSSOP8 Mounting: SMD Operating temperature: -40...85°C Topology: buck Kind of package: reel; tape Number of channels: 1 Output voltage: 1...76V DC Output current: 3A Input voltage: 12...76V DC Frequency: 750kHz |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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RB058L-60DDTE25 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 4µA Max. forward voltage: 0.64V Load current: 3A Max. forward impulse current: 120A Max. off-state voltage: 60V |
на замовлення 880 шт: термін постачання 21-30 дні (днів) |
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RBR5L40ADDTE25 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Mounting: SMD Kind of package: reel; tape Case: DO214AC; SMA Semiconductor structure: single diode Leakage current: 0.2mA Max. forward voltage: 0.53V Load current: 5A Max. forward impulse current: 50A Max. off-state voltage: 40V |
на замовлення 1490 шт: термін постачання 21-30 дні (днів) |
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RB050L-40DDTE25 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 1mA Max. forward voltage: 0.55V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 70A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB058L-40DDTE25 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 5µA Max. forward voltage: 0.69V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 100A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RB068L-40DDTE25 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape Case: DO214AC; SMA Mounting: SMD Kind of package: reel; tape Type of diode: Schottky rectifying Leakage current: 1µA Max. forward voltage: 0.69V Load current: 2A Max. off-state voltage: 40V Max. forward impulse current: 50A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS106AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 6A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 86A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 65W Max. load current: 29A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS108AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 110A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 75W Max. load current: 35A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SCS112AGC | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube Type of diode: Schottky rectifying Case: TO220AC Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Max. forward voltage: 1.7V Max. forward impulse current: 167A Kind of package: tube Heatsink thickness: max. 1.27mm Power dissipation: 93W Max. load current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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2SC5824T100R | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 3A Power dissipation: 0.5W Case: SC62; SOT89 Current gain: 180...390 Mounting: SMD Kind of package: reel; tape Frequency: 200MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DA204UT106 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A Type of diode: switching Mounting: SMD Max. off-state voltage: 20V Load current: 0.1A Semiconductor structure: double series Case: SC70; SOT323 Max. forward voltage: 1V Max. forward impulse current: 0.3A Kind of package: reel; tape Max. load current: 0.2A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DA204KT146 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A Type of diode: switching Mounting: SMD Max. off-state voltage: 20V Load current: 0.1A Semiconductor structure: double series Case: SC59; SOT346 Max. forward voltage: 1V Max. forward impulse current: 0.3A Kind of package: reel; tape Max. load current: 0.2A Power dissipation: 0.2W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
RFN20NS4SFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V Type of diode: rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 430V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 1.55V Max. forward impulse current: 100A Kind of package: reel; tape Reverse recovery time: 30ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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RE1J002YNTCL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Pulsed drain current: 0.8A Power dissipation: 0.15W Case: SOT416F Gate-source voltage: ±8V On-state resistance: 9Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 528 шт: термін постачання 21-30 дні (днів) |
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RB160VYM-40FHTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Leakage current: 50µA Max. forward impulse current: 10A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
RB168VYM-40FHTR | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD323HE Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.79V Leakage current: 0.5µA Max. forward impulse current: 5A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
EDZVT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
KDZVTFTR3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.3V; SMD; reel,tape; SOD123F; single diode; 80uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 80µA
товару немає в наявності
В кошику
од. на суму грн.
UDZVTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
EDZVFHT2R3.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 3.3V; SMD; reel,tape; SC79,SOD523; 20uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 3.3V
Mounting: SMD
Kind of package: reel; tape
Case: SC79; SOD523
Semiconductor structure: single diode
Leakage current: 20µA
товару немає в наявності
В кошику
од. на суму грн.
UDZVFHTE-173.3B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
Category: SMD Zener diodes
Description: Diode: Zener; 200mW; 3.3V; SMD; reel,tape; SC90A,SOD323F; 20uA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC90A; SOD323F
Semiconductor structure: single diode
Leakage current: 20µA
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RQ3E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 60A
Power dissipation: 17W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 39A; Idm: 60A; 17W; HSMT8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 60A
Power dissipation: 17W
Case: HSMT8
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 15.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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RS1E150GNTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 60A; 22W; HSOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 60A
Power dissipation: 22W
Case: HSOP8
Gate-source voltage: ±20V
On-state resistance: 13.3mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCS240AE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
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SCS240AE2HRC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; TO247-3; 270W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.63V
Max. load current: 160A
Max. forward impulse current: 520A
Leakage current: 0.4mA
Power dissipation: 270W
Kind of package: tube
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SCS240KE2C |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Power dissipation: 420W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Power dissipation: 420W
Kind of package: tube
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SCS240KE2GC11 |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Leakage current: 0.4mA
Power dissipation: 420W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; 420W
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 1.9V
Max. load current: 160A
Max. forward impulse current: 620A
Leakage current: 0.4mA
Power dissipation: 420W
Kind of package: tube
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BA78M18FP-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Voltage drop: 2V
Kind of voltage regulator: fixed
Input voltage: 21...33V
Output voltage: 18V
Case: TO252-3
Category: Fixed voltage regulators
Description: IC: voltage regulator; fixed; 18V; 0.5A; TO252-3; SMD; reel,tape
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: voltage regulator
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Voltage drop: 2V
Kind of voltage regulator: fixed
Input voltage: 21...33V
Output voltage: 18V
Case: TO252-3
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EDZVT2R5.1B |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 150mW; 5.1V; SMD; reel,tape; SC79,SOD523F; 2uA
Type of diode: Zener
Power dissipation: 0.15W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SC79; SOD523F
Semiconductor structure: single diode
Leakage current: 2µA
на замовлення 6440 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.98 грн |
57+ | 6.90 грн |
100+ | 4.51 грн |
200+ | 3.94 грн |
500+ | 3.25 грн |
684+ | 1.35 грн |
1879+ | 1.28 грн |
CSL1901DW1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused
Mounting: SMD
Type of diode: LED
LED colour: orange
Wavelength: 605nm
LED current: 2mA
Luminosity: 9.4mcd
LED lens: diffused; white
Front: flat
Category: SMD colour LEDs
Description: LED; orange; SMD; 9.4mcd; 2mA; 605nm; Lens: white,diffused
Mounting: SMD
Type of diode: LED
LED colour: orange
Wavelength: 605nm
LED current: 2mA
Luminosity: 9.4mcd
LED lens: diffused; white
Front: flat
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BV1LB028FPJ-CE1 |
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Виробник: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V
Mounting: SMD
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
On-state resistance: 85mΩ
Number of channels: 1
Output current: 2.4A
Supply voltage: 3...5.5V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.4A; Ch: 1; SMD; -40÷150°C; 3÷5.5V
Mounting: SMD
Kind of integrated circuit: low-side
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -40...150°C
On-state resistance: 85mΩ
Number of channels: 1
Output current: 2.4A
Supply voltage: 3...5.5V
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BAV99HYT116 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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RUQ050N02FRATR |
Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 10A; 1.25W; TSMT6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5A
Pulsed drain current: 10A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±10V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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BU4312F-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Integrated circuit features: ±1% accuracy
Manufacturer series: BU43
Kind of RESET output: CMOS
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; CMOS; 700mVDC÷7VDC
Case: SSOP5
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Operating temperature: -40...125°C
Supply voltage: 700mV DC...7V DC
Number of channels: 1
Threshold on-voltage: 1.2V
Integrated circuit features: ±1% accuracy
Manufacturer series: BU43
Kind of RESET output: CMOS
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2SC3906KT146R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
на замовлення 2995 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 38.00 грн |
16+ | 25.56 грн |
19+ | 20.86 грн |
50+ | 12.70 грн |
100+ | 10.66 грн |
194+ | 4.78 грн |
533+ | 4.47 грн |
BD5227FVE-TR |
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Виробник: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Type of integrated circuit: supervisor circuit
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; VSOF5; Ch: 1
Type of integrated circuit: supervisor circuit
Case: VSOF5
Supply voltage: 950mV DC...10V DC
Mounting: SMD
Manufacturer series: BD52
Active logical level: low
Kind of RESET output: open drain
Kind of package: reel; tape
Kind of integrated circuit: voltage detector
Operating temperature: -40...105°C
Number of channels: 1
Threshold on-voltage: 2.7V
Integrated circuit features: ±1% accuracy
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RXH125N03TB1 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 36A; 2W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 36A
Power dissipation: 2W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 12.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RQ3E180AJTB |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 5.8mΩ
Power dissipation: 30W
Drain current: 30A
Pulsed drain current: 72A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Case: HSMT8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 72A; 30W; HSMT8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 5.8mΩ
Power dissipation: 30W
Drain current: 30A
Pulsed drain current: 72A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Kind of channel: enhancement
Case: HSMT8
на замовлення 1196 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 55.74 грн |
10+ | 43.05 грн |
38+ | 24.23 грн |
105+ | 22.90 грн |
BD9G341AEFJ-E2 |
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Виробник: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 12÷76VDC; Uout: 1÷76VDC; 3A; HTSSOP8
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: HTSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Topology: buck
Kind of package: reel; tape
Number of channels: 1
Output voltage: 1...76V DC
Output current: 3A
Input voltage: 12...76V DC
Frequency: 750kHz
на замовлення 25 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 266.01 грн |
8+ | 121.54 грн |
21+ | 114.49 грн |
RB058L-60DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 4µA
Max. forward voltage: 0.64V
Load current: 3A
Max. forward impulse current: 120A
Max. off-state voltage: 60V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 4µA
Max. forward voltage: 0.64V
Load current: 3A
Max. forward impulse current: 120A
Max. off-state voltage: 60V
на замовлення 880 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 59.11 грн |
11+ | 36.62 грн |
50+ | 28.94 грн |
70+ | 13.17 грн |
193+ | 12.47 грн |
RBR5L40ADDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 0.2mA
Max. forward voltage: 0.53V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Kind of package: reel; tape
Case: DO214AC; SMA
Semiconductor structure: single diode
Leakage current: 0.2mA
Max. forward voltage: 0.53V
Load current: 5A
Max. forward impulse current: 50A
Max. off-state voltage: 40V
на замовлення 1490 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 70.94 грн |
10+ | 51.44 грн |
25+ | 44.46 грн |
68+ | 13.57 грн |
187+ | 12.86 грн |
RB050L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1mA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 70A
Semiconductor structure: single diode
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RB058L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 5µA
Max. forward voltage: 0.69V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 3A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 5µA
Max. forward voltage: 0.69V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 100A
Semiconductor structure: single diode
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RB068L-40DDTE25 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1µA
Max. forward voltage: 0.69V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DO214AC,SMA; SMD; 40V; 2A; reel,tape
Case: DO214AC; SMA
Mounting: SMD
Kind of package: reel; tape
Type of diode: Schottky rectifying
Leakage current: 1µA
Max. forward voltage: 0.69V
Load current: 2A
Max. off-state voltage: 40V
Max. forward impulse current: 50A
Semiconductor structure: single diode
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SCS106AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 86A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 65W
Max. load current: 29A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 6A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 86A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 65W
Max. load current: 29A
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SCS108AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 75W
Max. load current: 35A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 8A; TO220AC; Ufmax: 1.7V
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 110A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 75W
Max. load current: 35A
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SCS112AGC |
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Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 167A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 93W
Max. load current: 48A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; 93W; tube
Type of diode: Schottky rectifying
Case: TO220AC
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Max. forward voltage: 1.7V
Max. forward impulse current: 167A
Kind of package: tube
Heatsink thickness: max. 1.27mm
Power dissipation: 93W
Max. load current: 48A
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2SC5824T100R |
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Виробник: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 3A; 500mW; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 3A
Power dissipation: 0.5W
Case: SC62; SOT89
Current gain: 180...390
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
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DA204UT106 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC70,SOT323; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC70; SOT323
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
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DA204KT146 |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC59; SOT346
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
Category: SMD universal diodes
Description: Diode: switching; SMD; 20V; 0.1A; SC59,SOT346; Ufmax: 1V; Ifsm: 0.3A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.1A
Semiconductor structure: double series
Case: SC59; SOT346
Max. forward voltage: 1V
Max. forward impulse current: 0.3A
Kind of package: reel; tape
Max. load current: 0.2A
Power dissipation: 0.2W
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RFN20NS4SFHTL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 430V; 20A; 30ns; D2PAK; Ufmax: 1.55V
Type of diode: rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 430V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 1.55V
Max. forward impulse current: 100A
Kind of package: reel; tape
Reverse recovery time: 30ns
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RE1J002YNTCL |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 0.8A; 150mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.2A
Pulsed drain current: 0.8A
Power dissipation: 0.15W
Case: SOT416F
Gate-source voltage: ±8V
On-state resistance: 9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 528 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.11 грн |
29+ | 13.72 грн |
100+ | 7.68 грн |
299+ | 3.08 грн |
RB160VYM-40FHTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 10A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Leakage current: 50µA
Max. forward impulse current: 10A
Kind of package: reel; tape
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RB168VYM-40FHTR |
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Виробник: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 0.5µA
Max. forward impulse current: 5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323HE; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323HE
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Leakage current: 0.5µA
Max. forward impulse current: 5A
Kind of package: reel; tape
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