Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (102219) > Сторінка 370 з 1704
| Фото | Назва | Виробник | Інформація |
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BD7003NUX-E2 | Rohm Semiconductor |
Description: IC REG LIN POS ADJ VSON008X2020Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: VSON008X2020 Voltage - Output (Max): 3.3V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 66dB (100Hz) Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 1573 шт: термін постачання 21-31 дні (днів) |
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BD9009HFP-TR | Rohm Semiconductor |
Description: IC REG BUCK ADJUSTABLE 4A HRP7 |
на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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BD9206EFV-E2 | Rohm Semiconductor |
Description: IC LED DRV LIN PWM 20MA 20HTSSOP Packaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 5V Mounting Type: Surface Mount Number of Outputs: 6 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 20mA Supplier Device Package: 20-HTSSOP-B Dimming: PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 30V Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9327EFJ-E2 | Rohm Semiconductor |
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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BD9862MUV-E2 | Rohm Semiconductor |
Description: IC PMIC PS TFT-LCD 24VQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 4.5V Applications: LCD Display Supplier Device Package: VQFN024V4040 |
на замовлення 2449 шт: термін постачання 21-31 дні (днів) |
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BH6172GU-E2 | Rohm Semiconductor |
Description: IC PMIC DC/DC 1CH LDO 5CH Packaging: Cut Tape (CT) Package / Case: 23-VFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Voltage - Supply: 2.2V ~ 5.5V Applications: Handheld/Mobile Devices Supplier Device Package: VCSP85H2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH6173GUL-E2 | Rohm Semiconductor |
Description: IC PMIC DC/DC 1CH LDO 3CHPackaging: Cut Tape (CT) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Voltage - Supply: 2.2V ~ 5.2V Applications: Handheld/Mobile Devices Supplier Device Package: VCSP50L2 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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BH6178GUL-E2 | Rohm Semiconductor |
Description: IC PMIC DC/DC 2CH LDO 5CH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU6650NUX-TR | Rohm Semiconductor |
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON |
на замовлення 15210 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6651NUX-TR | Rohm Semiconductor |
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON |
на замовлення 6306 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6652NUX-TR | Rohm Semiconductor |
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON |
на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU90030G-TR | Rohm Semiconductor |
Description: IC LED DRIVER RGLTR 80MA 6SSOP |
на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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MP6K31TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 2A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R5019ANJTL | Rohm Semiconductor |
Description: MOSFET N-CH 500V 19A LPTS |
на замовлення 944 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RCD040N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 4A CPT3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RCD080N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 8A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
на замовлення 5359 шт: термін постачання 21-31 дні (днів) |
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| RDR005N25TL | Rohm Semiconductor |
Description: MOSFET N-CH 250V 500MA TSMT3Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V |
на замовлення 3576 шт: термін постачання 21-31 дні (днів) |
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RK7002BT116 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 250MA SST3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
на замовлення 267 шт: термін постачання 21-31 дні (днів) |
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RP1E050RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A MPT6 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RP1E090RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 9A MPT6 |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RP1E100RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A MPT6Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRH040P03TB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 4A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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RRH050P03TB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
на замовлення 2415 шт: термін постачання 21-31 дні (днів) |
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RRH100P03TB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRH140P03TB1 | Rohm Semiconductor |
Description: MOSFET P-CH 30V 14A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V |
на замовлення 13247 шт: термін постачання 21-31 дні (днів) |
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RSD050N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 5A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSD220N06TL | Rohm Semiconductor |
Description: MOSFET N-CH 60V 22A CPT3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH065N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 6.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH065N06TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 60V 6.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
на замовлення 2520 шт: термін постачання 21-31 дні (днів) |
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RSH070P05TB1 | Rohm Semiconductor |
Description: MOSFET P-CH 45V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
на замовлення 2074 шт: термін постачання 21-31 дні (днів) |
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RSH090N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 9A SOP8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V |
на замовлення 2403 шт: термін постачання 21-31 дні (днів) |
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RSH100N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 10A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH110N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 11A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH125N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH140N03TB1 | Rohm Semiconductor |
Description: MOSFET N-CH 30V 14A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8J62TB1 | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 4.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 12936 шт: термін постачання 21-31 дні (днів) |
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SH8J65TB1 | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3351 шт: термін постачання 21-31 дні (днів) |
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SH8J66TB1 | Rohm Semiconductor |
Description: MOSFET 2P-CH 30V 9A SOP8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 7233 шт: термін постачання 21-31 дні (днів) |
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SH8K1TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5A SOP8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SH8K22TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 45V 4.5A SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8K2TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 6A SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8K32TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 4.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP (5.0x6.0) Part Status: Not For New Designs |
на замовлення 10565 шт: термін постачання 21-31 дні (днів) |
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SH8K3TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1563 шт: термін постачання 21-31 дні (днів) |
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SH8K4TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 9A SOP8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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SH8K5TB1 | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A SOP8 |
на замовлення 2343 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SH8M24TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 45V 4.5A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 6563 шт: термін постачання 21-31 дні (днів) |
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SH8M2TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 3.5A SOP8 |
на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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SH8M3TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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SH8M41TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 5780 шт: термін постачання 21-31 дні (днів) |
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SH8M5TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 6A/7A 8SOPPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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SP8M51TB1 | Rohm Semiconductor |
Description: MOSFET N/P-CH 100V 3A/2.5A SOP8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH6178GUL-E2 | Rohm Semiconductor |
Description: IC PMIC DC/DC 2CH LDO 5CH |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU6650NUX-TR | Rohm Semiconductor |
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON |
на замовлення 15210 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6651NUX-TR | Rohm Semiconductor |
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON |
на замовлення 6306 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6652NUX-TR | Rohm Semiconductor |
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON |
на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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R5019ANJTL | Rohm Semiconductor |
Description: MOSFET N-CH 500V 19A LPTS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RP1E050RPTR | Rohm Semiconductor |
Description: MOSFET P-CH 30V 5A MPT6 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BD63843EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 28HTSSOPPackaging: Tape & Reel (TR) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 700mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 28V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/8, 1/16 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD63847EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 28HTSSOPPackaging: Tape & Reel (TR) Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1.7A Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 28V Supplier Device Package: 28-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2, 1/8, 1/16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD63801EFV-E2 | Rohm Semiconductor |
Description: IC MTR DRV BIPLR 19-28V 24HTSSOPPackaging: Tape & Reel (TR) Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 500mA Interface: Parallel Operating Temperature: -25°C ~ 150°C (TJ) Output Configuration: Half Bridge (4) Voltage - Supply: 19V ~ 28V Applications: General Purpose Technology: DMOS Voltage - Load: 19V ~ 28V Supplier Device Package: 24-HTSSOP-B Motor Type - Stepper: Bipolar Step Resolution: 1, 1/2 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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| BD7003NUX-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.94 грн |
| 10+ | 68.09 грн |
| 25+ | 64.63 грн |
| 100+ | 49.82 грн |
| 250+ | 46.58 грн |
| 500+ | 41.16 грн |
| 1000+ | 31.96 грн |
| BD9009HFP-TR |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A HRP7
Description: IC REG BUCK ADJUSTABLE 4A HRP7
на замовлення 102 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 824.66 грн |
| 10+ | 717.62 грн |
| 25+ | 684.24 грн |
| 100+ | 557.53 грн |
| BD9206EFV-E2 |
Виробник: Rohm Semiconductor
Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| BD9327EFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
на замовлення 420 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 277.13 грн |
| 10+ | 240.02 грн |
| 25+ | 226.91 грн |
| 100+ | 184.55 грн |
| 250+ | 175.09 грн |
| BD9862MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
на замовлення 2449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 376.22 грн |
| 10+ | 325.65 грн |
| 25+ | 307.85 грн |
| 100+ | 250.40 грн |
| 250+ | 237.56 грн |
| 500+ | 213.16 грн |
| 1000+ | 176.83 грн |
| BH6172GU-E2 |
Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Cut Tape (CT)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Cut Tape (CT)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
товару немає в наявності
В кошику
од. на суму грн.
| BH6173GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.81 грн |
| 10+ | 223.28 грн |
| 25+ | 211.10 грн |
| 100+ | 171.70 грн |
| 250+ | 162.89 грн |
| 500+ | 146.16 грн |
| 1000+ | 121.25 грн |
| BH6178GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 2CH LDO 5CH
Description: IC PMIC DC/DC 2CH LDO 5CH
товару немає в наявності
В кошику
од. на суму грн.
| BU6650NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 15210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BU6651NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 6306 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BU6652NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BU90030G-TR |
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Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR 80MA 6SSOP
Description: IC LED DRIVER RGLTR 80MA 6SSOP
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.69 грн |
| 10+ | 114.35 грн |
| 25+ | 108.56 грн |
| 100+ | 83.69 грн |
| 250+ | 78.23 грн |
| 500+ | 69.13 грн |
| 1000+ | 53.68 грн |
| MP6K31TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Description: MOSFET 2N-CH 60V 2A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| R5019ANJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 19A LPTS
Description: MOSFET N-CH 500V 19A LPTS
на замовлення 944 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RCD040N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A CPT3
Description: MOSFET N-CH 250V 4A CPT3
товару немає в наявності
В кошику
од. на суму грн.
| RCD080N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 5359 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.97 грн |
| 10+ | 100.68 грн |
| 100+ | 80.16 грн |
| 500+ | 63.65 грн |
| 1000+ | 54.00 грн |
| RDR005N25TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.23 грн |
| 10+ | 42.86 грн |
| 100+ | 29.69 грн |
| 500+ | 23.28 грн |
| 1000+ | 19.81 грн |
| RK7002BT116 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 18.48 грн |
| 31+ | 10.67 грн |
| 100+ | 6.65 грн |
| RP1E050RPTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A MPT6
Description: MOSFET P-CH 30V 5A MPT6
на замовлення 100 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RP1E090RPTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A MPT6
Description: MOSFET P-CH 30V 9A MPT6
на замовлення 594 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RP1E100RPTR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A MPT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Description: MOSFET P-CH 30V 10A MPT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RRH040P03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.13 грн |
| 10+ | 72.38 грн |
| RRH050P03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 2415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 104.13 грн |
| 10+ | 63.24 грн |
| 100+ | 41.99 грн |
| 500+ | 30.85 грн |
| 1000+ | 28.09 грн |
| RRH100P03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RRH140P03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
на замовлення 13247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.72 грн |
| 10+ | 127.37 грн |
| 100+ | 100.45 грн |
| 500+ | 85.06 грн |
| RSD050N06TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET N-CH 60V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RSD220N06TL |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
В кошику
од. на суму грн.
| RSH065N03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| RSH065N06TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2520 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 134.36 грн |
| 10+ | 82.00 грн |
| 100+ | 55.16 грн |
| 500+ | 40.96 грн |
| 1000+ | 37.70 грн |
| RSH070P05TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 2074 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 190.63 грн |
| 10+ | 118.47 грн |
| 100+ | 81.25 грн |
| 500+ | 61.38 грн |
| RSH090N03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Description: MOSFET N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
на замовлення 2403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 121.77 грн |
| 10+ | 73.91 грн |
| 100+ | 49.19 грн |
| 500+ | 36.21 грн |
| 1000+ | 33.00 грн |
| RSH100N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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од. на суму грн.
| RSH110N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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од. на суму грн.
| RSH125N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
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од. на суму грн.
| RSH140N03TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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од. на суму грн.
| SH8J62TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 12936 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 147.80 грн |
| 10+ | 90.01 грн |
| 100+ | 59.03 грн |
| 500+ | 44.01 грн |
| 1000+ | 40.36 грн |
| SH8J65TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3351 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 137.72 грн |
| 10+ | 109.82 грн |
| 100+ | 87.42 грн |
| 500+ | 69.42 грн |
| 1000+ | 58.90 грн |
| SH8J66TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 7233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 206.59 грн |
| 10+ | 178.31 грн |
| 100+ | 143.35 грн |
| 500+ | 110.53 грн |
| 1000+ | 91.58 грн |
| SH8K1TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SH8K22TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4.5A SOP8
Description: MOSFET 2N-CH 45V 4.5A SOP8
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од. на суму грн.
| SH8K2TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A SOP8
Description: MOSFET 2N-CH 30V 6A SOP8
товару немає в наявності
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од. на суму грн.
| SH8K32TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
на замовлення 10565 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 130.17 грн |
| 10+ | 112.49 грн |
| 100+ | 90.43 грн |
| 500+ | 69.72 грн |
| 1000+ | 57.77 грн |
| SH8K3TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 89.02 грн |
| 10+ | 70.11 грн |
| 100+ | 54.50 грн |
| 500+ | 43.35 грн |
| 1000+ | 35.32 грн |
| SH8K4TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.60 грн |
| 10+ | 142.41 грн |
| 100+ | 114.48 грн |
| 500+ | 88.27 грн |
| 1000+ | 73.14 грн |
| SH8K5TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A SOP8
Description: MOSFET 2N-CH 30V 3.5A SOP8
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SH8M24TB1 |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 6563 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 125.97 грн |
| 10+ | 98.98 грн |
| 100+ | 76.97 грн |
| 500+ | 61.23 грн |
| 1000+ | 49.88 грн |
| SH8M2TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A SOP8
Description: MOSFET N/P-CH 30V 3.5A SOP8
на замовлення 171 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 77.26 грн |
| 10+ | 65.50 грн |
| 100+ | 50.23 грн |
| SH8M3TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 594 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 88.18 грн |
| 10+ | 75.93 грн |
| 100+ | 59.17 грн |
| 500+ | 45.87 грн |
| SH8M41TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 5780 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.96 грн |
| 10+ | 103.59 грн |
| 100+ | 70.29 грн |
| 500+ | 52.58 грн |
| 1000+ | 48.28 грн |
| SH8M5TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 153 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 208.27 грн |
| 10+ | 129.06 грн |
| 100+ | 88.39 грн |
| SP8M51TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A SOP8
Description: MOSFET N/P-CH 100V 3A/2.5A SOP8
товару немає в наявності
В кошику
од. на суму грн.
| BH6178GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 2CH LDO 5CH
Description: IC PMIC DC/DC 2CH LDO 5CH
товару немає в наявності
В кошику
од. на суму грн.
| BU6650NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 15210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BU6651NUX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 6306 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BU6652NUX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| R5019ANJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 19A LPTS
Description: MOSFET N-CH 500V 19A LPTS
товару немає в наявності
В кошику
од. на суму грн.
| RP1E050RPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A MPT6
Description: MOSFET P-CH 30V 5A MPT6
на замовлення 100 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BD63843EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/8, 1/16
Part Status: Not For New Designs
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 700mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/8, 1/16
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
| BD63847EFV-E2 |
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Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.7A
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/8, 1/16
Description: IC MTR DRV BIPLR 19-28V 28HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-VSSOP (0.173", 4.40mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.7A
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 28-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2, 1/8, 1/16
товару немає в наявності
В кошику
од. на суму грн.
| BD63801EFV-E2 |
![]() |
Виробник: Rohm Semiconductor
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
Description: IC MTR DRV BIPLR 19-28V 24HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-VSSOP (0.220", 5.60mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -25°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 19V ~ 28V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 19V ~ 28V
Supplier Device Package: 24-HTSSOP-B
Motor Type - Stepper: Bipolar
Step Resolution: 1, 1/2
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 144.70 грн |


















