Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103004) > Сторінка 373 з 1717

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BA78M24CP-E2 BA78M24CP-E2 Rohm Semiconductor ba78_series-e.pdf Description: IC REG LIN 24V 500MA TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA78M24FP-E2 BA78M24FP-E2 Rohm Semiconductor Jisso_TO252-3-1-2_Rev004s_E2(MSL1).pdf Description: IC REG LINEAR 24V 500MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BD9009HFP-TR BD9009HFP-TR Rohm Semiconductor BD9006F,7F,9_HFP.pdf Description: IC REG BUCK ADJUSTABLE 4A HRP7
товару немає в наявності
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BD9206EFV-E2 BD9206EFV-E2 Rohm Semiconductor Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
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BD9327EFJ-E2 BD9327EFJ-E2 Rohm Semiconductor bd9325fj-e.pdf Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
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BD9862MUV-E2 BD9862MUV-E2 Rohm Semiconductor datasheet?p=BD9862MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+184.58 грн
Мінімальне замовлення: 2500
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BH6172GU-E2 BH6172GU-E2 Rohm Semiconductor Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Tape & Reel (TR)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
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BH6173GUL-E2 BH6173GUL-E2 Rohm Semiconductor BH6173GUL.pdf Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+128.84 грн
Мінімальне замовлення: 3000
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BH6178GUL-E2 BH6178GUL-E2 Rohm Semiconductor BH6178GUL.pdf Description: IC PMIC DC/DC 2CH LDO 5CH
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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BU6650NUX-TR BU6650NUX-TR Rohm Semiconductor bu665xnux-e.pdf Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
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BU6651NUX-TR BU6651NUX-TR Rohm Semiconductor bu665xnux-e.pdf Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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BU6652NUX-TR BU6652NUX-TR Rohm Semiconductor bu665xnux-e.pdf Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
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BU6653NUX-TR BU6653NUX-TR Rohm Semiconductor bu665xnux-e.pdf Description: IC REG LIN 1.8V/1.8V/2.8V 8VSON
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BU90030G-TR BU90030G-TR Rohm Semiconductor BU90030G.pdf Description: IC LED DRIVER RGLTR 80MA 6SSOP
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MP6K31TR MP6K31TR Rohm Semiconductor MP6K31.pdf Description: MOSFET 2N-CH 60V 2A MPT6
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R5019ANJTL R5019ANJTL Rohm Semiconductor r5019anj.pdf Description: MOSFET N-CH 500V 19A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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R6010ANX R6010ANX Rohm Semiconductor R6010ANX Description: MOSFET N-CH 600V 10A TO220FM
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R6012ANX R6012ANX Rohm Semiconductor 2SK2095N-v1.jpg Description: MOSFET N-CH 600V 12A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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R6015ANX R6015ANX Rohm Semiconductor datasheet?p=R6015ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
1+456.85 грн
10+369.32 грн
100+298.73 грн
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R6020ANX R6020ANX Rohm Semiconductor datasheet?p=R6020ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+634.84 грн
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RCD040N25TL RCD040N25TL Rohm Semiconductor RCD040N25.pdf Description: MOSFET N-CH 250V 4A CPT3
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RCD080N25TL RCD080N25TL Rohm Semiconductor datasheet?p=RCD080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+55.45 грн
Мінімальне замовлення: 2500
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RCX100N25 RCX100N25 Rohm Semiconductor datasheet?p=RCX100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 10A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
2+182.91 грн
10+131.03 грн
100+92.55 грн
Мінімальне замовлення: 2
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RCX120N25 RCX120N25 Rohm Semiconductor rcx120n25.pdf Description: MOSFET N-CH 250V 12A TO220FM
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RCX330N25 RCX330N25 Rohm Semiconductor datasheet?p=RCX330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 33A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
2+282.15 грн
10+202.59 грн
100+157.88 грн
Мінімальне замовлення: 2
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RCX510N25 RCX510N25 Rohm Semiconductor RCX510N25.pdf Description: MOSFET N-CH 250V 51A TO220FM
на замовлення 905 шт:
термін постачання 21-31 дні (днів)
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RDR005N25TL Rohm Semiconductor datasheet?p=RDR005N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
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RK7002BT116 RK7002BT116 Rohm Semiconductor RK7002B.pdf Description: MOSFET N-CH 60V 250MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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RP1A090ZPTR RP1A090ZPTR Rohm Semiconductor RP1A090ZP.pdf Description: MOSFET P-CH 12V 9A MPT6
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RP1E050RPTR RP1E050RPTR Rohm Semiconductor RP1E050RP.pdf Description: MOSFET P-CH 30V 5A MPT6
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RP1E090RPTR RP1E090RPTR Rohm Semiconductor RP1E090RP.pdf Description: MOSFET P-CH 30V 9A MPT6
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RP1E100RPTR RP1E100RPTR Rohm Semiconductor datasheet?p=RP1E100RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 10A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
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RRH040P03TB1 RRH040P03TB1 Rohm Semiconductor datasheet?p=RRH040P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
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RRH050P03TB1 RRH050P03TB1 Rohm Semiconductor datasheet?p=RRH050P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
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RRH100P03TB1 RRH100P03TB1 Rohm Semiconductor datasheet?p=RRH100P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
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RRH140P03TB1 RRH140P03TB1 Rohm Semiconductor datasheet?p=RRH140P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+88.56 грн
Мінімальне замовлення: 2500
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RSD050N06TL RSD050N06TL Rohm Semiconductor rsd050n06.pdf Description: MOSFET N-CH 60V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
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RSD220N06TL RSD220N06TL Rohm Semiconductor RSD220N06.pdf Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
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RSH065N03TB1 RSH065N03TB1 Rohm Semiconductor RSH065N03.pdf Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
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RSH065N06TB1 RSH065N06TB1 Rohm Semiconductor rsh065n06.pdf Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+40.60 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RSH070P05TB1 RSH070P05TB1 Rohm Semiconductor rsh070p05-e.pdf Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+59.22 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RSH100N03TB1 RSH100N03TB1 Rohm Semiconductor RSH100N03.pdf Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSH110N03TB1 RSH110N03TB1 Rohm Semiconductor datasheet?p=RSH110N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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RSH125N03TB1 RSH125N03TB1 Rohm Semiconductor RSH125N03.pdf Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
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RSH140N03TB1 RSH140N03TB1 Rohm Semiconductor RSH140N03.pdf Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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RSY200N05TL RSY200N05TL Rohm Semiconductor datasheet?p=RSY200N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 45V 20A TCPT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: TCPT3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
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RZY200P01TL RZY200P01TL Rohm Semiconductor datasheet?p=RZY200P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 12V 20A TCPT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Power Dissipation (Max): 20W (Tc)
Supplier Device Package: TCPT3
Part Status: Obsolete
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
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SH8J62TB1 SH8J62TB1 Rohm Semiconductor datasheet?p=SH8J62&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+30.55 грн
Мінімальне замовлення: 2500
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SH8J65TB1 SH8J65TB1 Rohm Semiconductor datasheet?p=SH8J65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+60.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8J66TB1 SH8J66TB1 Rohm Semiconductor sh8j66tb1-e.pdf Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+92.15 грн
Мінімальне замовлення: 2500
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SH8K1TB1 SH8K1TB1 Rohm Semiconductor SH8K1.pdf Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+31.55 грн
Мінімальне замовлення: 2500
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SH8K2TB1 SH8K2TB1 Rohm Semiconductor SH8K2.pdf Description: MOSFET 2N-CH 30V 6A SOP8
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SH8K32TB1 SH8K32TB1 Rohm Semiconductor datasheet?p=SH8K32&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+58.13 грн
5000+53.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8K4TB1 SH8K4TB1 Rohm Semiconductor SH8K4.pdf Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8K5TB1 SH8K5TB1 Rohm Semiconductor SH8K5.pdf Description: MOSFET 2N-CH 30V 3.5A SOP8
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SH8M24TB1 SH8M24TB1 Rohm Semiconductor datasheet?p=SH8M24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+50.75 грн
5000+46.54 грн
Мінімальне замовлення: 2500
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SH8M3TB1 SH8M3TB1 Rohm Semiconductor SH8M3.pdf Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
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SH8M41TB1 SH8M41TB1 Rohm Semiconductor datasheet?p=SH8M41&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+44.45 грн
Мінімальне замовлення: 2500
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SH8M5TB1 SH8M5TB1 Rohm Semiconductor datasheet?p=SH8M5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8M70TB1 SH8M70TB1 Rohm Semiconductor SH8M70.pdf Description: MOSFET N/P-CH 250V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
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BA78M24CP-E2 ba78_series-e.pdf
BA78M24CP-E2
Виробник: Rohm Semiconductor
Description: IC REG LIN 24V 500MA TO220CP-3
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BA78M24FP-E2 Jisso_TO252-3-1-2_Rev004s_E2(MSL1).pdf
BA78M24FP-E2
Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
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BD9009HFP-TR BD9006F,7F,9_HFP.pdf
BD9009HFP-TR
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A HRP7
товару немає в наявності
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BD9206EFV-E2
BD9206EFV-E2
Виробник: Rohm Semiconductor
Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
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BD9327EFJ-E2 bd9325fj-e.pdf
BD9327EFJ-E2
Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
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BD9862MUV-E2 datasheet?p=BD9862MUV&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
BD9862MUV-E2
Виробник: Rohm Semiconductor
Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+184.58 грн
Мінімальне замовлення: 2500
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BH6172GU-E2
BH6172GU-E2
Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Tape & Reel (TR)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
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BH6173GUL-E2 BH6173GUL.pdf
BH6173GUL-E2
Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+128.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BH6178GUL-E2 BH6178GUL.pdf
BH6178GUL-E2
Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 2CH LDO 5CH
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
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BU6650NUX-TR bu665xnux-e.pdf
BU6650NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
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BU6651NUX-TR bu665xnux-e.pdf
BU6651NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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BU6652NUX-TR bu665xnux-e.pdf
BU6652NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
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BU6653NUX-TR bu665xnux-e.pdf
BU6653NUX-TR
Виробник: Rohm Semiconductor
Description: IC REG LIN 1.8V/1.8V/2.8V 8VSON
товару немає в наявності
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BU90030G-TR BU90030G.pdf
BU90030G-TR
Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR 80MA 6SSOP
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MP6K31TR MP6K31.pdf
MP6K31TR
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
товару немає в наявності
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R5019ANJTL r5019anj.pdf
R5019ANJTL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 19A LPTS
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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R6010ANX R6010ANX
R6010ANX
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 10A TO220FM
товару немає в наявності
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R6012ANX 2SK2095N-v1.jpg
R6012ANX
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 12A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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R6015ANX datasheet?p=R6015ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6015ANX
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 15A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 7.5A, 10V
Power Dissipation (Max): 77W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+456.85 грн
10+369.32 грн
100+298.73 грн
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R6020ANX datasheet?p=R6020ANX&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
R6020ANX
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 20A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220FM
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+634.84 грн
В кошику  од. на суму  грн.
RCD040N25TL RCD040N25.pdf
RCD040N25TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A CPT3
товару немає в наявності
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RCD080N25TL datasheet?p=RCD080N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCD080N25TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+55.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
RCX100N25 datasheet?p=RCX100N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX100N25
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 10A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+182.91 грн
10+131.03 грн
100+92.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RCX120N25 rcx120n25.pdf
RCX120N25
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 12A TO220FM
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RCX330N25 datasheet?p=RCX330N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RCX330N25
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 33A TO220FM
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Supplier Device Package: TO-220FM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
на замовлення 303 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.15 грн
10+202.59 грн
100+157.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
RCX510N25 RCX510N25.pdf
RCX510N25
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 51A TO220FM
на замовлення 905 шт:
термін постачання 21-31 дні (днів)
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RDR005N25TL datasheet?p=RDR005N25&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
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RK7002BT116 RK7002B.pdf
RK7002BT116
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
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RP1A090ZPTR RP1A090ZP.pdf
RP1A090ZPTR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 9A MPT6
товару немає в наявності
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RP1E050RPTR RP1E050RP.pdf
RP1E050RPTR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A MPT6
товару немає в наявності
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RP1E090RPTR RP1E090RP.pdf
RP1E090RPTR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A MPT6
товару немає в наявності
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RP1E100RPTR datasheet?p=RP1E100RP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RP1E100RPTR
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A MPT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
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RRH040P03TB1 datasheet?p=RRH040P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRH040P03TB1
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
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RRH050P03TB1 datasheet?p=RRH050P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRH050P03TB1
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
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RRH100P03TB1 datasheet?p=RRH100P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRH100P03TB1
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
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RRH140P03TB1 datasheet?p=RRH140P03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RRH140P03TB1
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+88.56 грн
Мінімальне замовлення: 2500
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RSD050N06TL rsd050n06.pdf
RSD050N06TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
товару немає в наявності
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RSD220N06TL RSD220N06.pdf
RSD220N06TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
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RSH065N03TB1 RSH065N03.pdf
RSH065N03TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
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RSH065N06TB1 rsh065n06.pdf
RSH065N06TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+40.60 грн
Мінімальне замовлення: 2500
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RSH070P05TB1 rsh070p05-e.pdf
RSH070P05TB1
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+59.22 грн
Мінімальне замовлення: 2500
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RSH100N03TB1 RSH100N03.pdf
RSH100N03TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSH110N03TB1 datasheet?p=RSH110N03&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSH110N03TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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RSH125N03TB1 RSH125N03.pdf
RSH125N03TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
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RSH140N03TB1 RSH140N03.pdf
RSH140N03TB1
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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RSY200N05TL datasheet?p=RSY200N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RSY200N05TL
Виробник: Rohm Semiconductor
Description: MOSFET N-CH 45V 20A TCPT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: TCPT3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
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RZY200P01TL datasheet?p=RZY200P01&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
RZY200P01TL
Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 20A TCPT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Power Dissipation (Max): 20W (Tc)
Supplier Device Package: TCPT3
Part Status: Obsolete
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
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SH8J62TB1 datasheet?p=SH8J62&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8J62TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+30.55 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8J65TB1 datasheet?p=SH8J65&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8J65TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+60.47 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8J66TB1 sh8j66tb1-e.pdf
SH8J66TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+92.15 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8K1TB1 SH8K1.pdf
SH8K1TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+31.55 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8K2TB1 SH8K2.pdf
SH8K2TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A SOP8
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SH8K32TB1 datasheet?p=SH8K32&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8K32TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+58.13 грн
5000+53.90 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8K4TB1 SH8K4.pdf
SH8K4TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
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SH8K5TB1 SH8K5.pdf
SH8K5TB1
Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A SOP8
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SH8M24TB1 datasheet?p=SH8M24&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8M24TB1
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.75 грн
5000+46.54 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8M3TB1 SH8M3.pdf
SH8M3TB1
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
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SH8M41TB1 datasheet?p=SH8M41&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8M41TB1
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+44.45 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SH8M5TB1 datasheet?p=SH8M5&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
SH8M5TB1
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
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SH8M70TB1 SH8M70.pdf
SH8M70TB1
Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 250V 3A/2.5A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 250V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 180pF @ 25V
Rds On (Max) @ Id, Vgs: 1.63Ohm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP
товару немає в наявності
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