Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (104267) > Сторінка 373 з 1738
Фото | Назва | Виробник | Інформація |
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BA78M20CP-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-220CP-3 Voltage - Output (Min/Fixed): 20V PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 800 µA |
на замовлення 143 шт: термін постачання 21-31 дні (днів) |
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BA78M20FP-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252-3 Voltage - Output (Min/Fixed): 20V Part Status: Active PSRR: 58dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 800 µA |
на замовлення 3827 шт: термін постачання 21-31 дні (днів) |
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BA78M24CP-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-220-3 Cropped Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-220CP-3 Voltage - Output (Min/Fixed): 24V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BA78M24FP-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 33V Number of Regulators: 1 Supplier Device Package: TO-252-3 Voltage - Output (Min/Fixed): 24V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Current, Over Temperature Current - Supply (Max): 800 µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD7003NUX-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 300mA, 300mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Current - Quiescent (Iq): 95 µA Voltage - Input (Max): 5.5V Number of Regulators: 2 Supplier Device Package: VSON008X2020 Voltage - Output (Max): 3.3V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable PSRR: 66dB (100Hz) Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA Protection Features: Over Current, Over Temperature |
на замовлення 1573 шт: термін постачання 21-31 дні (днів) |
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BD9009HFP-TR | Rohm Semiconductor |
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на замовлення 102 шт: термін постачання 21-31 дні (днів) |
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BD9206EFV-E2 | Rohm Semiconductor |
Description: IC LED DRV LIN PWM 20MA 20HTSSOP Packaging: Cut Tape (CT) Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad Voltage - Output: 5V Mounting Type: Surface Mount Number of Outputs: 6 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 20mA Supplier Device Package: 20-HTSSOP-B Dimming: PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 30V Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BD9327EFJ-E2 | Rohm Semiconductor |
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на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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BD9862MUV-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 4.5V Applications: LCD Display Supplier Device Package: VQFN024V4040 |
на замовлення 2449 шт: термін постачання 21-31 дні (днів) |
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BH6172GU-E2 | Rohm Semiconductor |
Description: IC PMIC DC/DC 1CH LDO 5CH Packaging: Cut Tape (CT) Package / Case: 23-VFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Voltage - Supply: 2.2V ~ 5.5V Applications: Handheld/Mobile Devices Supplier Device Package: VCSP85H2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH6173GUL-E2 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-UFBGA Mounting Type: Surface Mount Operating Temperature: -35°C ~ 85°C Voltage - Supply: 2.2V ~ 5.2V Applications: Handheld/Mobile Devices Supplier Device Package: VCSP50L2 |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
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BH6178GUL-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU6650NUX-TR | Rohm Semiconductor |
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на замовлення 15210 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6651NUX-TR | Rohm Semiconductor |
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на замовлення 6306 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6652NUX-TR | Rohm Semiconductor |
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на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU90030G-TR | Rohm Semiconductor |
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на замовлення 2600 шт: термін постачання 21-31 дні (днів) |
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MP6K31TR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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R5019ANJTL | Rohm Semiconductor |
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на замовлення 944 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RCD040N25TL | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RCD080N25TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V Power Dissipation (Max): 850mW (Ta), 20W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V |
на замовлення 5359 шт: термін постачання 21-31 дні (днів) |
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RDR005N25TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V Power Dissipation (Max): 540mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V |
на замовлення 3576 шт: термін постачання 21-31 дні (днів) |
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RK7002BT116 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: SST3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V |
на замовлення 77 шт: термін постачання 21-31 дні (днів) |
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RP1A090ZPTR | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RP1E050RPTR | Rohm Semiconductor |
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на замовлення 100 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RP1E090RPTR | Rohm Semiconductor |
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на замовлення 594 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RP1E100RPTR | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: MPT6 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRH040P03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V |
на замовлення 11 шт: термін постачання 21-31 дні (днів) |
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RRH050P03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V |
на замовлення 2455 шт: термін постачання 21-31 дні (днів) |
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RRH100P03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RRH140P03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V Power Dissipation (Max): 650mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V |
на замовлення 13274 шт: термін постачання 21-31 дні (днів) |
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RSD050N06TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V Power Dissipation (Max): 15W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSD220N06TL | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta) Power Dissipation (Max): 20W (Ta) Supplier Device Package: CPT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH065N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH065N06TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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RSH070P05TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
на замовлення 3425 шт: термін постачання 21-31 дні (днів) |
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RSH090N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V |
на замовлення 2403 шт: термін постачання 21-31 дні (днів) |
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RSH100N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH110N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH125N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RSH140N03TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Power Dissipation (Max): 2W (Ta) Supplier Device Package: 8-SOP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8J62TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 12936 шт: термін постачання 21-31 дні (днів) |
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SH8J65TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 3351 шт: термін постачання 21-31 дні (днів) |
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SH8J66TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 7233 шт: термін постачання 21-31 дні (днів) |
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SH8K1TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SH8K22TB1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8K2TB1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SH8K32TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP (5.0x6.0) Part Status: Not For New Designs |
на замовлення 10565 шт: термін постачання 21-31 дні (днів) |
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SH8K3TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 1563 шт: термін постачання 21-31 дні (днів) |
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SH8K4TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 9A Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Active |
на замовлення 2440 шт: термін постачання 21-31 дні (днів) |
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SH8K5TB1 | Rohm Semiconductor |
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на замовлення 2343 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SH8M24TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 45V Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 6563 шт: термін постачання 21-31 дні (днів) |
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SH8M2TB1 | Rohm Semiconductor |
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на замовлення 171 шт: термін постачання 21-31 дні (днів) |
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SH8M3TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 594 шт: термін постачання 21-31 дні (днів) |
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SH8M41TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP Part Status: Not For New Designs |
на замовлення 5780 шт: термін постачання 21-31 дні (днів) |
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SH8M5TB1 | Rohm Semiconductor |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 7A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
на замовлення 153 шт: термін постачання 21-31 дні (днів) |
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SP8M51TB1 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BH6178GUL-E2 | Rohm Semiconductor |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BU6650NUX-TR | Rohm Semiconductor |
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на замовлення 15210 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6651NUX-TR | Rohm Semiconductor |
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на замовлення 6306 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BU6652NUX-TR | Rohm Semiconductor |
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на замовлення 11776 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
BA78M20CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 20V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 20V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Description: IC REG LIN 20V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 20V
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
на замовлення 143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 71.36 грн |
10+ | 61.21 грн |
25+ | 58.13 грн |
100+ | 44.82 грн |
BA78M20FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 20V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 20V
Part Status: Active
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Description: IC REG LINEAR 20V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 20V
Part Status: Active
PSRR: 58dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
на замовлення 3827 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 72.18 грн |
10+ | 61.92 грн |
25+ | 58.76 грн |
100+ | 45.30 грн |
250+ | 42.35 грн |
500+ | 37.43 грн |
1000+ | 29.06 грн |
BA78M24CP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 24V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Description: IC REG LIN 24V 500MA TO220CP-3
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Cropped Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-220CP-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
товару немає в наявності
В кошику
од. на суму грн.
BA78M24FP-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LINEAR 24V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
Description: IC REG LINEAR 24V 500MA TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 33V
Number of Regulators: 1
Supplier Device Package: TO-252-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 800 µA
товару немає в наявності
В кошику
од. на суму грн.
BD7003NUX-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
Description: IC REG LIN POS ADJ VSON008X2020
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 300mA, 300mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 95 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 2
Supplier Device Package: VSON008X2020
Voltage - Output (Max): 3.3V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
PSRR: 66dB (100Hz)
Voltage Dropout (Max): 0.36V @ 300mA, 0.36V @ 300mA
Protection Features: Over Current, Over Temperature
на замовлення 1573 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.10 грн |
10+ | 66.50 грн |
25+ | 63.12 грн |
100+ | 48.66 грн |
250+ | 45.49 грн |
500+ | 40.20 грн |
1000+ | 31.22 грн |
BD9009HFP-TR |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A HRP7
Description: IC REG BUCK ADJUSTABLE 4A HRP7
на замовлення 102 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 805.44 грн |
10+ | 700.89 грн |
25+ | 668.29 грн |
100+ | 544.54 грн |
BD9206EFV-E2 |
Виробник: Rohm Semiconductor
Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
Description: IC LED DRV LIN PWM 20MA 20HTSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-VSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 5V
Mounting Type: Surface Mount
Number of Outputs: 6
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 20mA
Supplier Device Package: 20-HTSSOP-B
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 30V
Part Status: Not For New Designs
товару немає в наявності
В кошику
од. на суму грн.
BD9327EFJ-E2 |
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Виробник: Rohm Semiconductor
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
Description: IC REG BUCK ADJUSTABLE 4A 8TSOP
на замовлення 420 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 270.67 грн |
10+ | 234.42 грн |
25+ | 221.63 грн |
100+ | 180.25 грн |
250+ | 171.01 грн |
BD9862MUV-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
Description: IC PMIC PS TFT-LCD 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 4.5V
Applications: LCD Display
Supplier Device Package: VQFN024V4040
на замовлення 2449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 367.45 грн |
10+ | 318.06 грн |
25+ | 300.67 грн |
100+ | 244.56 грн |
250+ | 232.02 грн |
500+ | 208.19 грн |
1000+ | 172.70 грн |
BH6172GU-E2 |
Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Cut Tape (CT)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
Description: IC PMIC DC/DC 1CH LDO 5CH
Packaging: Cut Tape (CT)
Package / Case: 23-VFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.5V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP85H2
товару немає в наявності
В кошику
од. на суму грн.
BH6173GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
Description: IC PMIC DC/DC 1CH LDO 3CH
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA
Mounting Type: Surface Mount
Operating Temperature: -35°C ~ 85°C
Voltage - Supply: 2.2V ~ 5.2V
Applications: Handheld/Mobile Devices
Supplier Device Package: VCSP50L2
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 248.52 грн |
10+ | 215.23 грн |
25+ | 203.46 грн |
100+ | 165.48 грн |
250+ | 157.00 грн |
500+ | 140.87 грн |
1000+ | 116.86 грн |
BH6178GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 2CH LDO 5CH
Description: IC PMIC DC/DC 2CH LDO 5CH
товару немає в наявності
В кошику
од. на суму грн.
BU6650NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 15210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU6651NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 6306 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU6652NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU90030G-TR |
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Виробник: Rohm Semiconductor
Description: IC LED DRIVER RGLTR 80MA 6SSOP
Description: IC LED DRIVER RGLTR 80MA 6SSOP
на замовлення 2600 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.59 грн |
10+ | 111.68 грн |
25+ | 106.03 грн |
100+ | 81.73 грн |
250+ | 76.41 грн |
500+ | 67.52 грн |
1000+ | 52.43 грн |
MP6K31TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 2A MPT6
Description: MOSFET 2N-CH 60V 2A MPT6
товару немає в наявності
В кошику
од. на суму грн.
R5019ANJTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 500V 19A LPTS
Description: MOSFET N-CH 500V 19A LPTS
на замовлення 944 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RCD040N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 4A CPT3
Description: MOSFET N-CH 250V 4A CPT3
товару немає в наявності
В кошику
од. на суму грн.
RCD080N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
Description: MOSFET N-CH 250V 8A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 4A, 10V
Power Dissipation (Max): 850mW (Ta), 20W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 25 V
на замовлення 5359 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 123.03 грн |
10+ | 98.33 грн |
100+ | 78.29 грн |
500+ | 62.16 грн |
1000+ | 52.75 грн |
RDR005N25TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Description: MOSFET N-CH 250V 500MA TSMT3
Packaging: Cut Tape (CT)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 8.8Ohm @ 250mA, 10V
Power Dissipation (Max): 540mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: TSMT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 50.03 грн |
10+ | 41.86 грн |
100+ | 29.00 грн |
500+ | 22.74 грн |
1000+ | 19.35 грн |
RK7002BT116 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Description: MOSFET N-CH 60V 250MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: SST3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
на замовлення 77 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
20+ | 17.22 грн |
31+ | 10.27 грн |
RP1A090ZPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 12V 9A MPT6
Description: MOSFET P-CH 12V 9A MPT6
товару немає в наявності
В кошику
од. на суму грн.
RP1E050RPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A MPT6
Description: MOSFET P-CH 30V 5A MPT6
на замовлення 100 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RP1E090RPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 9A MPT6
Description: MOSFET P-CH 30V 9A MPT6
на замовлення 594 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
RP1E100RPTR |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A MPT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Description: MOSFET P-CH 30V 10A MPT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: MPT6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RRH040P03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
Description: MOSFET P-CH 30V 4A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 10 V
на замовлення 11 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.71 грн |
10+ | 70.69 грн |
RRH050P03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
Description: MOSFET P-CH 30V 5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 10 V
на замовлення 2455 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 113.19 грн |
10+ | 68.56 грн |
100+ | 45.55 грн |
500+ | 33.46 грн |
1000+ | 30.47 грн |
RRH100P03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
Description: MOSFET P-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 10A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RRH140P03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
Description: MOSFET P-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
Power Dissipation (Max): 650mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 10 V
на замовлення 13274 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 156.66 грн |
10+ | 124.95 грн |
100+ | 90.13 грн |
RSD050N06TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET N-CH 60V 5A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 5A, 10V
Power Dissipation (Max): 15W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
RSD220N06TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Description: MOSFET N-CH 60V 22A CPT3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Power Dissipation (Max): 20W (Ta)
Supplier Device Package: CPT3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
товару немає в наявності
В кошику
од. на суму грн.
RSH065N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Description: MOSFET N-CH 30V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
товару немає в наявності
В кошику
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RSH065N06TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
Description: MOSFET N-CH 60V 6.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 37mOhm @ 6.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 10 V
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 153.38 грн |
10+ | 94.07 грн |
100+ | 63.45 грн |
500+ | 47.24 грн |
1000+ | 43.28 грн |
RSH070P05TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET P-CH 45V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 7A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 47.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 3425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 186.19 грн |
10+ | 123.53 грн |
100+ | 84.74 грн |
500+ | 63.95 грн |
1000+ | 58.94 грн |
RSH090N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
Description: MOSFET N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 10 V
на замовлення 2403 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 118.93 грн |
10+ | 72.19 грн |
100+ | 48.05 грн |
500+ | 35.36 грн |
1000+ | 32.23 грн |
RSH100N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
Description: MOSFET N-CH 30V 10A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 13.3mOhm @ 10A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 10 V
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RSH110N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Description: MOSFET N-CH 30V 11A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 10.7mOhm @ 11A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
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од. на суму грн.
RSH125N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Description: MOSFET N-CH 30V 12.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
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од. на суму грн.
RSH140N03TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Description: MOSFET N-CH 30V 14A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Power Dissipation (Max): 2W (Ta)
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
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од. на суму грн.
SH8J62TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 10V
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 12936 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 144.36 грн |
10+ | 87.91 грн |
100+ | 57.66 грн |
500+ | 42.98 грн |
1000+ | 39.42 грн |
SH8J65TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 3351 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 134.51 грн |
10+ | 107.26 грн |
100+ | 85.38 грн |
500+ | 67.80 грн |
1000+ | 57.53 грн |
SH8J66TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2P-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 10V
Rds On (Max) @ Id, Vgs: 18.5mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 7233 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 201.77 грн |
10+ | 174.16 грн |
100+ | 140.01 грн |
500+ | 107.95 грн |
1000+ | 89.45 грн |
SH8K1TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SH8K22TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 45V 4.5A SOP8
Description: MOSFET 2N-CH 45V 4.5A SOP8
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од. на суму грн.
SH8K2TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 6A SOP8
Description: MOSFET 2N-CH 30V 6A SOP8
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од. на суму грн.
SH8K32TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
Description: MOSFET 2N-CH 60V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP (5.0x6.0)
Part Status: Not For New Designs
на замовлення 10565 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.13 грн |
10+ | 109.86 грн |
100+ | 88.32 грн |
500+ | 68.10 грн |
1000+ | 56.42 грн |
SH8K3TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET 2N-CH 30V 7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 1563 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.94 грн |
10+ | 68.48 грн |
100+ | 53.23 грн |
500+ | 42.34 грн |
1000+ | 34.49 грн |
SH8K4TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
Description: MOSFET 2N-CH 30V 9A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A
Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Active
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 160.76 грн |
10+ | 139.09 грн |
100+ | 111.82 грн |
500+ | 86.21 грн |
1000+ | 71.43 грн |
SH8K5TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A SOP8
Description: MOSFET 2N-CH 30V 3.5A SOP8
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
SH8M24TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 45V 4.5A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 45V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 550pF @ 10V
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.6nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 6563 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 123.03 грн |
10+ | 96.67 грн |
100+ | 75.18 грн |
500+ | 59.80 грн |
1000+ | 48.72 грн |
SH8M2TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A SOP8
Description: MOSFET N/P-CH 30V 3.5A SOP8
на замовлення 171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 75.46 грн |
10+ | 63.98 грн |
100+ | 49.06 грн |
SH8M3TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 30V 5A/4.5A SOP8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Rds On (Max) @ Id, Vgs: 51mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.9nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 594 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 86.12 грн |
10+ | 74.16 грн |
100+ | 57.79 грн |
500+ | 44.81 грн |
SH8M41TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
Description: MOSFET N/P-CH 80V 3.4A/2.6A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 10V
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Part Status: Not For New Designs
на замовлення 5780 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 164.04 грн |
10+ | 101.18 грн |
100+ | 68.65 грн |
500+ | 51.35 грн |
1000+ | 47.15 грн |
SH8M5TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
Description: MOSFET N/P-CH 30V 6A/7A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 7A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.2nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 8-SOP
на замовлення 153 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 203.41 грн |
10+ | 126.06 грн |
100+ | 86.33 грн |
SP8M51TB1 |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 100V 3A/2.5A SOP8
Description: MOSFET N/P-CH 100V 3A/2.5A SOP8
товару немає в наявності
В кошику
од. на суму грн.
BH6178GUL-E2 |
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Виробник: Rohm Semiconductor
Description: IC PMIC DC/DC 2CH LDO 5CH
Description: IC PMIC DC/DC 2CH LDO 5CH
товару немає в наявності
В кошику
од. на суму грн.
BU6650NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.8V 8VSON
на замовлення 15210 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU6651NUX-TR |
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Виробник: Rohm Semiconductor
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
Description: IC REG LIN 1.5V/1.8V/2.8V 8VSON
на замовлення 6306 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BU6652NUX-TR |
![]() |
Виробник: Rohm Semiconductor
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
Description: IC REG LDO 2.8V/2.8V/1.5V 8VSON
на замовлення 11776 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.