Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (103507) > Сторінка 412 з 1726
| Фото | Назва | Виробник | Інформація |
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DTC144EEBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V EMT3FPackaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: EMT3F (SOT-416FL) Part Status: Active Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 150 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 2068 шт: термін постачання 21-31 дні (днів) |
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DTC144EUBTL | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 50V UMT3FPackaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: UMT3F Part Status: Not For New Designs Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
на замовлення 4969 шт: термін постачання 21-31 дні (днів) |
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DTC623TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Resistor - Base (R1): 2.2 kOhms Frequency - Transition: 150 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 600 mA Supplier Device Package: SMT3 DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 7709 шт: термін постачання 21-31 дні (днів) |
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DTC643TKT146 | Rohm Semiconductor |
Description: TRANS PREBIAS NPN 20V 0.6A SMT3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Supplier Device Package: SMT3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW Frequency - Transition: 150 MHz Resistor - Base (R1): 4.7 kOhms Resistors Included: R1 Only |
на замовлення 1195 шт: термін постачання 21-31 дні (днів) |
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EM6M2T2R | Rohm Semiconductor |
Description: MOSFET N/P-CH 20V 0.2A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 200mA Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
на замовлення 66632 шт: термін постачання 21-31 дні (днів) |
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EMB3T2R | Rohm Semiconductor |
Description: TRANS 2PNP PREBIAS 0.15W EMT6 |
на замовлення 6604 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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EMN11T2R | Rohm Semiconductor |
Description: DIODE ARRAY GP 80V 100MA EMD6Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: EMD6 Current - Average Rectified (Io) (per Diode): 100mA Diode Configuration: 2 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
на замовлення 10254 шт: термін постачання 21-31 дні (днів) |
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FMA5AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Resistor - Base (R1): 2.2kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Part Status: Active Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 47kOhms |
на замовлення 5540 шт: термін постачання 21-31 дні (днів) |
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FMA7AT148 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL PNP SMT5Part Status: Not For New Designs Supplier Device Package: SMT5 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 3003 шт: термін постачання 21-31 дні (днів) |
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FMP1T148 | Rohm Semiconductor |
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA Current - Average Rectified (Io): 25 mA Voltage - Peak Reverse (Max): 80 V Supplier Device Package: SMD5 Technology: Standard Operating Temperature: 150°C (TJ) Diode Type: Single Phase Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) |
на замовлення 1928 шт: термін постачання 21-31 дні (днів) |
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FMY5T148 | Rohm Semiconductor |
Description: TRANS NPN/PNP 120V 50MA SMT5DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 120V Current - Collector (Ic) (Max): 50mA Power - Max: 300mW Operating Temperature: 150°C (TJ) Transistor Type: 1 NPN, 1 PNP (Emitter Coupled) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Packaging: Cut Tape (CT) Supplier Device Package: SMT5 Frequency - Transition: 140MHz |
на замовлення 2530 шт: термін постачання 21-31 дні (днів) |
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IMH23T110 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Part Status: Active Supplier Device Package: SMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 150MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 20V Current - Collector (Ic) (Max): 600mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IMH8AT108 | Rohm Semiconductor |
Description: TRANS PREBIAS DUAL NPN SMT6Supplier Device Package: SMT6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 300mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Cut Tape (CT) |
на замовлення 79 шт: термін постачання 21-31 дні (днів) |
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MMSTA28T146 | Rohm Semiconductor |
Description: TRANS NPN DARL 80V 0.3A SMT3Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 300 mA Supplier Device Package: SMT3 Frequency - Transition: 200MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN - Darlington Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2510B | Rohm Semiconductor |
Description: DIODE ZENER 10.3V 1W PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 7 V Power - Max: 1 W Part Status: Not For New Designs Supplier Device Package: PMDS Impedance (Max) (Zzt): 6 Ohms Voltage - Zener (Nom) (Vz): 10.3 V Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2511B | Rohm Semiconductor |
Description: DIODE ZENER 11.5V 1W PMDS |
на замовлення 1720 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2513B | Rohm Semiconductor |
Description: DIODE ZENER 13.8V 1W PMDS |
на замовлення 2720 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2515B | Rohm Semiconductor |
Description: DIODE ZENER 15.4V 1W PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 11 V Power - Max: 1 W Supplier Device Package: PMDS Impedance (Max) (Zzt): 10 Ohms Voltage - Zener (Nom) (Vz): 15.4 V Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
на замовлення 1869 шт: термін постачання 21-31 дні (днів) |
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PTZTE2516B | Rohm Semiconductor |
Description: DIODE ZENER 16.9V 1W PMDSCurrent - Reverse Leakage @ Vr: 10 µA @ 12 V Power - Max: 1 W Supplier Device Package: PMDS Impedance (Max) (Zzt): 12 Ohms Voltage - Zener (Nom) (Vz): 16.9 V Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Tolerance: ±6% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2520B | Rohm Semiconductor |
Description: DIODE ZENER 20.8V 1W PMDS |
на замовлення 1678 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2522B | Rohm Semiconductor |
Description: DIODE ZENER 23.9V 1W PMDS |
на замовлення 2649 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2530B | Rohm Semiconductor |
Description: DIODE ZENER 31.6V 1W PMDS |
на замовлення 3859 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE2533B | Rohm Semiconductor |
Description: DIODE ZENER 35V 1W PMDS |
на замовлення 1056 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE256.2B | Rohm Semiconductor |
Description: DIODE ZENER 6.5V 1W PMDS |
на замовлення 3829 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PTZTE258.2B | Rohm Semiconductor |
Description: DIODE ZENER 8.7V 1W PMDS |
на замовлення 2181 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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QS6J11TR | Rohm Semiconductor |
Description: MOSFET 2P-CH 12V 2A TSMT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2A Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Active |
на замовлення 3684 шт: термін постачання 21-31 дні (днів) |
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QS8K2TR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A TSMT8 |
на замовлення 2746 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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QST8TR | Rohm Semiconductor |
Description: TRANS 2PNP 12V 1.5A TSMT6Part Status: Active Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 400MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 1.5A Power - Max: 1.25W Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 2430 шт: термін постачання 21-31 дні (днів) |
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QSX8TR | Rohm Semiconductor |
Description: TRANS 2NPN 30V 1A 6TSMTMounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Supplier Device Package: TSMT6 (SC-95) Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA Voltage - Collector Emitter Breakdown (Max): 30V Current - Collector (Ic) (Max): 1A Power - Max: 1.25W Operating Temperature: 150°C (TJ) Transistor Type: 2 NPN (Dual) |
на замовлення 255 шт: термін постачання 21-31 дні (днів) |
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RB060L-40TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 2A PMDS |
на замовлення 3570 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB160L-60TE25 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 60V 1A PMDS Current - Reverse Leakage @ Vr: 1 mA @ 60 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 60 V Part Status: Not For New Designs Operating Temperature - Junction: 150°C (Max) Supplier Device Package: PMDS Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RB421DT146 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 40V 100MA SMD3Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: SMD3 Current - Average Rectified (Io): 100mA Capacitance @ Vr, F: 6pF @ 10V, 1MHz |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB461FT106 | Rohm Semiconductor |
Description: DIODE SCHOTTKY 20V 700MA UMD3Current - Reverse Leakage @ Vr: 200 µA @ 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 20 V Part Status: Active Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD3 Current - Average Rectified (Io): 700mA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RB550EATR | Rohm Semiconductor |
Description: DIODE ARR SCHOTT 30V 700MA TSMD5Current - Reverse Leakage @ Vr: 50 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: TSMD5 Current - Average Rectified (Io) (per Diode): 700mA Diode Configuration: 2 Independent Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Cut Tape (CT) |
на замовлення 984 шт: термін постачання 21-31 дні (днів) |
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RB558WTL | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTTKY 30V EMD3 |
на замовлення 8964 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RB731XNTR | Rohm Semiconductor |
Description: DIODE ARRAY SCHOTT 40V 30MA UMD6Current - Reverse Leakage @ Vr: 1 µA @ 10 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 125°C (Max) Supplier Device Package: UMD6 Current - Average Rectified (Io) (per Diode): 30mA Diode Configuration: 3 Independent Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 5665 шт: термін постачання 21-31 дні (днів) |
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RN142GT2R | Rohm Semiconductor |
Description: RF DIODE PIN 60V VMD2Current - Max: 100 mA Part Status: Obsolete Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz Operating Temperature: 150°C (TJ) Diode Type: PIN - Single Package / Case: SOD-723 Packaging: Cut Tape (CT) Supplier Device Package: VMD2 Voltage - Peak Reverse (Max): 60V Resistance @ If, F: 2Ohm @ 10mA, 100MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RUM002N02T2L | Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
на замовлення 816088 шт: термін постачання 21-31 дні (днів) |
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RUR020N02TL | Rohm Semiconductor |
Description: MOSFET N-CH 20V 2A TSMT3Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: TSMT3 Vgs(th) (Max) @ Id: 1V @ 1mA Power Dissipation (Max): 540mW (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-96 Packaging: Cut Tape (CT) |
на замовлення 9453 шт: термін постачання 21-31 дні (днів) |
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RZM002P02T2L | Rohm Semiconductor |
Description: MOSFET P-CH 20V 200MA VMT3Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: VMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V |
на замовлення 76413 шт: термін постачання 21-31 дні (днів) |
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STZ5.6NT146 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 5.6V SMD3Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V Power - Max: 200 mW Supplier Device Package: SMD3 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 5.6 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 4949 шт: термін постачання 21-31 дні (днів) |
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STZ6.2NT146 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 6.2V SMD3Current - Reverse Leakage @ Vr: 1 µA @ 3 V Power - Max: 200 mW Supplier Device Package: SMD3 Impedance (Max) (Zzt): 60 Ohms Voltage - Zener (Nom) (Vz): 6.2 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 14065 шт: термін постачання 21-31 дні (днів) |
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UDZSTE-1736B | Rohm Semiconductor |
Description: DIODE ZENER 36V 200MW UMD2Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Tolerance: ±3% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 100 nA @ 27 V Power - Max: 200 mW Part Status: Not For New Designs Supplier Device Package: UMD2 Impedance (Max) (Zzt): 300 Ohms Voltage - Zener (Nom) (Vz): 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMC2NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5Supplier Device Package: UMT5 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 30mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMC5NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5Supplier Device Package: UMT5 Resistor - Emitter Base (R2): 47kOhms, 10kOhms Resistor - Base (R1): 47kOhms, 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 30mA, 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 4865 шт: термін постачання 21-31 дні (днів) |
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UMD22NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6Supplier Device Package: UMT6 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMG3NTR | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W UMT5Supplier Device Package: UMT5 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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UML6NTR | Rohm Semiconductor |
Description: TRANS NPN 12V 0.5A UMT5Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 12 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: UMT5 Frequency - Transition: 320MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: NPN + Diode (Isolated) Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Packaging: Cut Tape (CT) |
на замовлення 1502 шт: термін постачання 21-31 дні (днів) |
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UMZ12NT106 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 12V UMD3Current - Reverse Leakage @ Vr: 100 nA @ 9 V Power - Max: 200 mW Supplier Device Package: UMD3 Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 12 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±8% Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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UMZ6.8NT106 | Rohm Semiconductor |
Description: DIODE ZENER ARRAY 6.8V UMD3Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V Power - Max: 200 mW Supplier Device Package: UMD3 Impedance (Max) (Zzt): 40 Ohms Voltage - Zener (Nom) (Vz): 6.8 V Configuration: 1 Pair Common Anode Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Tolerance: ±5% Packaging: Cut Tape (CT) |
на замовлення 1260 шт: термін постачання 21-31 дні (днів) |
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UMZ7NTR | Rohm Semiconductor |
Description: TRANS NPN/PNP 12V 0.5A 6UMT |
на замовлення 8703 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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R6004CNDTL | Rohm Semiconductor |
Description: MOSFET N-CH 600V 4A CPT |
на замовлення 4226 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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MP6K11TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 3.5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MP6K12TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MP6K14TCR | Rohm Semiconductor |
Description: MOSFET 2N-CH 30V 8A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MP6M11TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 3.5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MP6M14TCR | Rohm Semiconductor |
Description: MOSFET N/P-CH 30V 8A/6A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RP1E125XNTR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 12.5A MPT6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RF301B2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 3A CPD |
на замовлення 4365 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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RF501B2STL | Rohm Semiconductor |
Description: DIODE GEN PURP 200V 5A CPD |
на замовлення 2050 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| DTC144EEBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V EMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: EMT3F (SOT-416FL)
Part Status: Active
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 2068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 15.82 грн |
| 34+ | 9.07 грн |
| 100+ | 5.61 грн |
| 500+ | 3.85 грн |
| 1000+ | 3.39 грн |
| DTC144EUBTL |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: UMT3F
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
на замовлення 4969 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 11.87 грн |
| 42+ | 7.39 грн |
| 100+ | 4.55 грн |
| 500+ | 3.11 грн |
| 1000+ | 2.73 грн |
| DTC623TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 150 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: SMT3
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
на замовлення 7709 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 31.65 грн |
| 15+ | 21.18 грн |
| 100+ | 10.67 грн |
| 500+ | 8.88 грн |
| 1000+ | 6.91 грн |
| DTC643TKT146 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
Description: TRANS PREBIAS NPN 20V 0.6A SMT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Supplier Device Package: SMT3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 4.7 kOhms
Resistors Included: R1 Only
на замовлення 1195 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.35 грн |
| 13+ | 23.92 грн |
| 100+ | 15.21 грн |
| 500+ | 10.76 грн |
| 1000+ | 9.62 грн |
| EM6M2T2R |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET N/P-CH 20V 0.2A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 200mA
Input Capacitance (Ciss) (Max) @ Vds: 25pF @ 10V
Rds On (Max) @ Id, Vgs: 1Ohm @ 200mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
на замовлення 66632 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 56.96 грн |
| 10+ | 34.13 грн |
| 100+ | 22.05 грн |
| 500+ | 15.79 грн |
| 1000+ | 14.21 грн |
| 2000+ | 12.88 грн |
| EMB3T2R |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP PREBIAS 0.15W EMT6
Description: TRANS 2PNP PREBIAS 0.15W EMT6
на замовлення 6604 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMN11T2R |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DIODE ARRAY GP 80V 100MA EMD6
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: EMD6
Current - Average Rectified (Io) (per Diode): 100mA
Diode Configuration: 2 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
на замовлення 10254 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 32.44 грн |
| 14+ | 22.32 грн |
| 100+ | 14.48 грн |
| 500+ | 10.24 грн |
| 1000+ | 7.98 грн |
| 2000+ | 7.39 грн |
| FMA5AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
Description: TRANS PREBIAS DUAL PNP SMT5
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Resistor - Base (R1): 2.2kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Part Status: Active
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 47kOhms
на замовлення 5540 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 12+ | 27.43 грн |
| 100+ | 16.48 грн |
| 500+ | 14.32 грн |
| 1000+ | 9.74 грн |
| FMA7AT148 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL PNP SMT5
Part Status: Not For New Designs
Supplier Device Package: SMT5
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 3003 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 12+ | 27.43 грн |
| 100+ | 16.48 грн |
| 500+ | 14.32 грн |
| 1000+ | 9.74 грн |
| FMP1T148 |
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Виробник: Rohm Semiconductor
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Description: BRIDGE RECT 1PHASE 80V 25MA SMD5
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 mA
Current - Average Rectified (Io): 25 mA
Voltage - Peak Reverse (Max): 80 V
Supplier Device Package: SMD5
Technology: Standard
Operating Temperature: 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
на замовлення 1928 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.02 грн |
| 11+ | 28.27 грн |
| 100+ | 21.11 грн |
| 500+ | 15.57 грн |
| 1000+ | 12.03 грн |
| FMY5T148 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
Description: TRANS NPN/PNP 120V 50MA SMT5
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 2V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 120V
Current - Collector (Ic) (Max): 50mA
Power - Max: 300mW
Operating Temperature: 150°C (TJ)
Transistor Type: 1 NPN, 1 PNP (Emitter Coupled)
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Packaging: Cut Tape (CT)
Supplier Device Package: SMT5
Frequency - Transition: 140MHz
на замовлення 2530 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 55.38 грн |
| 10+ | 33.22 грн |
| 100+ | 21.38 грн |
| 500+ | 15.27 грн |
| 1000+ | 13.73 грн |
| IMH23T110 |
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Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Part Status: Active
Supplier Device Package: SMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 20V
Current - Collector (Ic) (Max): 600mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| IMH8AT108 |
![]() |
Виробник: Rohm Semiconductor
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS DUAL NPN SMT6
Supplier Device Package: SMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 300mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Cut Tape (CT)
на замовлення 79 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.81 грн |
| 12+ | 26.13 грн |
| MMSTA28T146 |
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Виробник: Rohm Semiconductor
Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS NPN DARL 80V 0.3A SMT3
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: SMT3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2510B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 10.3V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 7 V
Power - Max: 1 W
Part Status: Not For New Designs
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 10.3 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2511B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 11.5V 1W PMDS
Description: DIODE ZENER 11.5V 1W PMDS
на замовлення 1720 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2513B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 13.8V 1W PMDS
Description: DIODE ZENER 13.8V 1W PMDS
на замовлення 2720 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2515B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 15.4V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15.4 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 15.4V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 11 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 10 Ohms
Voltage - Zener (Nom) (Vz): 15.4 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.35 грн |
| 10+ | 33.22 грн |
| 100+ | 24.78 грн |
| 500+ | 18.27 грн |
| PTZTE2516B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 16.9V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 16.9 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 16.9V 1W PMDS
Current - Reverse Leakage @ Vr: 10 µA @ 12 V
Power - Max: 1 W
Supplier Device Package: PMDS
Impedance (Max) (Zzt): 12 Ohms
Voltage - Zener (Nom) (Vz): 16.9 V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| PTZTE2520B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 20.8V 1W PMDS
Description: DIODE ZENER 20.8V 1W PMDS
на замовлення 1678 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2522B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 23.9V 1W PMDS
Description: DIODE ZENER 23.9V 1W PMDS
на замовлення 2649 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2530B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 31.6V 1W PMDS
Description: DIODE ZENER 31.6V 1W PMDS
на замовлення 3859 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE2533B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 35V 1W PMDS
Description: DIODE ZENER 35V 1W PMDS
на замовлення 1056 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE256.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 6.5V 1W PMDS
Description: DIODE ZENER 6.5V 1W PMDS
на замовлення 3829 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PTZTE258.2B |
![]() |
Виробник: Rohm Semiconductor
Description: DIODE ZENER 8.7V 1W PMDS
Description: DIODE ZENER 8.7V 1W PMDS
на замовлення 2181 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| QS6J11TR |
![]() |
Виробник: Rohm Semiconductor
Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
Description: MOSFET 2P-CH 12V 2A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2A
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 6V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Active
на замовлення 3684 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 66.46 грн |
| 10+ | 39.85 грн |
| 100+ | 26.01 грн |
| 500+ | 18.80 грн |
| 1000+ | 17.00 грн |
| QS8K2TR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A TSMT8
Description: MOSFET 2N-CH 30V 3.5A TSMT8
на замовлення 2746 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| QST8TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2PNP 12V 1.5A TSMT6
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 1.5A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 12V 1.5A TSMT6
Part Status: Active
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 400MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 200mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 1.5A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
на замовлення 2430 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 63.29 грн |
| 10+ | 38.02 грн |
| 100+ | 24.70 грн |
| 500+ | 17.80 грн |
| 1000+ | 16.06 грн |
| QSX8TR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN 30V 1A 6TSMT
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Description: TRANS 2NPN 30V 1A 6TSMT
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Supplier Device Package: TSMT6 (SC-95)
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 30V
Current - Collector (Ic) (Max): 1A
Power - Max: 1.25W
Operating Temperature: 150°C (TJ)
Transistor Type: 2 NPN (Dual)
на замовлення 255 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.88 грн |
| 10+ | 38.85 грн |
| 100+ | 25.27 грн |
| RB060L-40TE25 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 2A PMDS
Description: DIODE SCHOTTKY 40V 2A PMDS
на замовлення 3570 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB160L-60TE25 |
Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 60V 1A PMDS
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 60V 1A PMDS
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 60 V
Part Status: Not For New Designs
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PMDS
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| RB421DT146 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 40V 100MA SMD3
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Description: DIODE SCHOTTKY 40V 100MA SMD3
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: SMD3
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
на замовлення 6 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB461FT106 |
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Виробник: Rohm Semiconductor
Description: DIODE SCHOTTKY 20V 700MA UMD3
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
Description: DIODE SCHOTTKY 20V 700MA UMD3
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Part Status: Active
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD3
Current - Average Rectified (Io): 700mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.39 грн |
| 11+ | 30.09 грн |
| 100+ | 22.44 грн |
| 500+ | 16.54 грн |
| 1000+ | 12.78 грн |
| RB550EATR |
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Виробник: Rohm Semiconductor
Description: DIODE ARR SCHOTT 30V 700MA TSMD5
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TSMD5
Current - Average Rectified (Io) (per Diode): 700mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
Description: DIODE ARR SCHOTT 30V 700MA TSMD5
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: TSMD5
Current - Average Rectified (Io) (per Diode): 700mA
Diode Configuration: 2 Independent
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Cut Tape (CT)
на замовлення 984 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 64.08 грн |
| 10+ | 38.17 грн |
| 100+ | 24.69 грн |
| 500+ | 17.74 грн |
| RB558WTL |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTTKY 30V EMD3
Description: DIODE ARRAY SCHOTTKY 30V EMD3
на замовлення 8964 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RB731XNTR |
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Виробник: Rohm Semiconductor
Description: DIODE ARRAY SCHOTT 40V 30MA UMD6
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD6
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: DIODE ARRAY SCHOTT 40V 30MA UMD6
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 125°C (Max)
Supplier Device Package: UMD6
Current - Average Rectified (Io) (per Diode): 30mA
Diode Configuration: 3 Independent
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 5665 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 58.55 грн |
| 10+ | 34.51 грн |
| 100+ | 25.40 грн |
| 500+ | 18.34 грн |
| 1000+ | 16.57 грн |
| RN142GT2R |
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Виробник: Rohm Semiconductor
Description: RF DIODE PIN 60V VMD2
Current - Max: 100 mA
Part Status: Obsolete
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Supplier Device Package: VMD2
Voltage - Peak Reverse (Max): 60V
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
Description: RF DIODE PIN 60V VMD2
Current - Max: 100 mA
Part Status: Obsolete
Capacitance @ Vr, F: 0.45pF @ 1V, 1MHz
Operating Temperature: 150°C (TJ)
Diode Type: PIN - Single
Package / Case: SOD-723
Packaging: Cut Tape (CT)
Supplier Device Package: VMD2
Voltage - Peak Reverse (Max): 60V
Resistance @ If, F: 2Ohm @ 10mA, 100MHz
товару немає в наявності
В кошику
од. на суму грн.
| RUM002N02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
Description: MOSFET N-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V
на замовлення 816088 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.73 грн |
| 23+ | 13.71 грн |
| 100+ | 8.59 грн |
| 500+ | 5.96 грн |
| 1000+ | 5.29 грн |
| 2000+ | 4.71 грн |
| RUR020N02TL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 2A TSMT3
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: TSMT3
Vgs(th) (Max) @ Id: 1V @ 1mA
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-96
Packaging: Cut Tape (CT)
на замовлення 9453 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 43.51 грн |
| 11+ | 27.88 грн |
| 100+ | 18.98 грн |
| 500+ | 13.99 грн |
| 1000+ | 12.73 грн |
| RZM002P02T2L |
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Виробник: Rohm Semiconductor
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
Description: MOSFET P-CH 20V 200MA VMT3
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: VMT3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 10 V
на замовлення 76413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.94 грн |
| 23+ | 13.41 грн |
| 100+ | 8.40 грн |
| 500+ | 5.83 грн |
| 1000+ | 5.16 грн |
| 2000+ | 4.60 грн |
| STZ5.6NT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 5.6V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 2.5 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 4949 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 10+ | 32.61 грн |
| 100+ | 22.31 грн |
| 500+ | 16.61 грн |
| 1000+ | 15.13 грн |
| STZ6.2NT146 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.2V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 6.2V SMD3
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Power - Max: 200 mW
Supplier Device Package: SMD3
Impedance (Max) (Zzt): 60 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 14065 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 44.31 грн |
| 10+ | 36.65 грн |
| 100+ | 25.49 грн |
| 500+ | 18.68 грн |
| 1000+ | 15.18 грн |
| UDZSTE-1736B |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER 36V 200MW UMD2
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
Description: DIODE ZENER 36V 200MW UMD2
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Tolerance: ±3%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Power - Max: 200 mW
Part Status: Not For New Designs
Supplier Device Package: UMD2
Impedance (Max) (Zzt): 300 Ohms
Voltage - Zener (Nom) (Vz): 36 V
товару немає в наявності
В кошику
од. на суму грн.
| UMC2NTR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| UMC5NTR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA, 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 30 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 30mA, 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 4865 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 28.48 грн |
| 16+ | 19.05 грн |
| 100+ | 9.61 грн |
| 500+ | 7.99 грн |
| 1000+ | 6.22 грн |
| UMD22NTR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS NPN/PNP PREBIAS 0.15W UMT6
Supplier Device Package: UMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| UMG3NTR |
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Виробник: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS 2NPN PREBIAS 0.15W UMT5
Supplier Device Package: UMT5
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.23 грн |
| 14+ | 22.78 грн |
| 100+ | 11.50 грн |
| 500+ | 9.56 грн |
| 1000+ | 7.44 грн |
| UML6NTR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN 12V 0.5A UMT5
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: UMT5
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Description: TRANS NPN 12V 0.5A UMT5
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 12 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: UMT5
Frequency - Transition: 320MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 270 @ 10mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
на замовлення 1502 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 26.11 грн |
| 16+ | 19.58 грн |
| 100+ | 11.76 грн |
| 500+ | 10.22 грн |
| 1000+ | 7.20 грн |
| UMZ12NT106 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 12V UMD3
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±8%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 12V UMD3
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±8%
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| UMZ6.8NT106 |
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Виробник: Rohm Semiconductor
Description: DIODE ZENER ARRAY 6.8V UMD3
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER ARRAY 6.8V UMD3
Current - Reverse Leakage @ Vr: 500 nA @ 3.5 V
Power - Max: 200 mW
Supplier Device Package: UMD3
Impedance (Max) (Zzt): 40 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Configuration: 1 Pair Common Anode
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 1260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 27.69 грн |
| 15+ | 20.95 грн |
| 100+ | 12.59 грн |
| 500+ | 10.94 грн |
| 1000+ | 7.44 грн |
| UMZ7NTR |
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Виробник: Rohm Semiconductor
Description: TRANS NPN/PNP 12V 0.5A 6UMT
Description: TRANS NPN/PNP 12V 0.5A 6UMT
на замовлення 8703 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| R6004CNDTL |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 600V 4A CPT
Description: MOSFET N-CH 600V 4A CPT
на замовлення 4226 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MP6K11TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 3.5A MPT6
Description: MOSFET 2N-CH 30V 3.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| MP6K12TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 5A MPT6
Description: MOSFET 2N-CH 30V 5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| MP6K14TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET 2N-CH 30V 8A MPT6
Description: MOSFET 2N-CH 30V 8A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| MP6M11TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 3.5A MPT6
Description: MOSFET N/P-CH 30V 3.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| MP6M14TCR |
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Виробник: Rohm Semiconductor
Description: MOSFET N/P-CH 30V 8A/6A MPT6
Description: MOSFET N/P-CH 30V 8A/6A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RP1E125XNTR |
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Виробник: Rohm Semiconductor
Description: MOSFET N-CH 30V 12.5A MPT6
Description: MOSFET N-CH 30V 12.5A MPT6
товару немає в наявності
В кошику
од. на суму грн.
| RF301B2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 3A CPD
Description: DIODE GEN PURP 200V 3A CPD
на замовлення 4365 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RF501B2STL |
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Виробник: Rohm Semiconductor
Description: DIODE GEN PURP 200V 5A CPD
Description: DIODE GEN PURP 200V 5A CPD
на замовлення 2050 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.




































