Продукція > ROHM SEMICONDUCTOR > Всі товари виробника ROHM SEMICONDUCTOR (107708) > Сторінка 1796 з 1796
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
SCT3017ALGC11 | ROHM SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 118A Power dissipation: 428W Case: TO247 On-state resistance: 22.1mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 295A Gate charge: 172nC Gate-source voltage: -4...22V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
|
|
SCT3022KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Power dissipation: 427W Case: TO247 On-state resistance: 28.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 237A Gate charge: 178nC Gate-source voltage: -4...22V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
 |
SCT3040KLGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247 Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 55A Power dissipation: 262W Case: TO247 On-state resistance: 40mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| SCT2H12NZGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 3.7A Power dissipation: 35W Case: TO3PFM On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 9.2A Gate charge: 14nC Gate-source voltage: -6...22V |
товару немає в наявності |
В кошику од. на суму грн. | |
| SCS210KE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W Technology: SiC Power dissipation: 160W Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.9V Max. off-state voltage: 1.2kV Load current: 5A x2 Max. load current: 52A Semiconductor structure: common cathode; double Leakage current: 0.1mA Type of diode: Schottky rectifying Max. forward impulse current: 170A |
товару немає в наявності |
В кошику од. на суму грн. | |
| SCS230AE2GC11 | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 230W Technology: SiC Power dissipation: 230W Case: TO247-3 Mounting: THT Kind of package: tube Max. forward voltage: 1.63V Max. off-state voltage: 650V Load current: 15A x2 Max. load current: 130A Semiconductor structure: common cathode; double Leakage current: 0.3mA Type of diode: Schottky rectifying Max. forward impulse current: 0.4kA |
товару немає в наявності |
Мінімальне замовлення: 450 шт В кошику од. на суму грн. | |
|
|
SCT2280KEGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 14A Power dissipation: 108W Case: TO247 On-state resistance: 364mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 35A Gate charge: 36nC Gate-source voltage: -6...22V |
товару немає в наявності |
В кошику од. на суму грн. |
|
|
SCT3022ALGC11 | ROHM SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Power dissipation: 339W Case: TO247 On-state resistance: 28.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 232A Gate charge: 133nC Gate-source voltage: -4...22V |
товару немає в наявності |
Мінімальне замовлення: 30 шт В кошику од. на суму грн. |
| SCT3017ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Power dissipation: 428W
Case: TO247
On-state resistance: 22.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 295A
Gate charge: 172nC
Gate-source voltage: -4...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 118A; Idm: 295A; 428W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 118A
Power dissipation: 428W
Case: TO247
On-state resistance: 22.1mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 295A
Gate charge: 172nC
Gate-source voltage: -4...22V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| SCT3022KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Power dissipation: 427W
Case: TO247
On-state resistance: 28.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 237A
Gate charge: 178nC
Gate-source voltage: -4...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Power dissipation: 427W
Case: TO247
On-state resistance: 28.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 237A
Gate charge: 178nC
Gate-source voltage: -4...22V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.
| SCT3040KLGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; 262W; TO247
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Power dissipation: 262W
Case: TO247
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCT2H12NZGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Power dissipation: 35W
Case: TO3PFM
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9.2A
Gate charge: 14nC
Gate-source voltage: -6...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 3.7A; Idm: 9.2A; 35W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 3.7A
Power dissipation: 35W
Case: TO3PFM
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 9.2A
Gate charge: 14nC
Gate-source voltage: -6...22V
товару немає в наявності
В кошику
од. на суму грн.
| SCS210KE2GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W
Technology: SiC
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.9V
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 52A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5Ax2; TO247-3; 160W
Technology: SiC
Power dissipation: 160W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.9V
Max. off-state voltage: 1.2kV
Load current: 5A x2
Max. load current: 52A
Semiconductor structure: common cathode; double
Leakage current: 0.1mA
Type of diode: Schottky rectifying
Max. forward impulse current: 170A
товару немає в наявності
В кошику
од. на суму грн.
| SCS230AE2GC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 230W
Technology: SiC
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.63V
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 130A
Semiconductor structure: common cathode; double
Leakage current: 0.3mA
Type of diode: Schottky rectifying
Max. forward impulse current: 0.4kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; 230W
Technology: SiC
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. forward voltage: 1.63V
Max. off-state voltage: 650V
Load current: 15A x2
Max. load current: 130A
Semiconductor structure: common cathode; double
Leakage current: 0.3mA
Type of diode: Schottky rectifying
Max. forward impulse current: 0.4kA
товару немає в наявності
Мінімальне замовлення: 450 шт
В кошику
од. на суму грн.
| SCT2280KEGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Power dissipation: 108W
Case: TO247
On-state resistance: 364mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 36nC
Gate-source voltage: -6...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 14A; Idm: 35A; 108W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 14A
Power dissipation: 108W
Case: TO247
On-state resistance: 364mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 35A
Gate charge: 36nC
Gate-source voltage: -6...22V
товару немає в наявності
В кошику
од. на суму грн.
| SCT3022ALGC11 |
|
Виробник: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Power dissipation: 339W
Case: TO247
On-state resistance: 28.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 232A
Gate charge: 133nC
Gate-source voltage: -4...22V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Power dissipation: 339W
Case: TO247
On-state resistance: 28.6mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 232A
Gate charge: 133nC
Gate-source voltage: -4...22V
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику
од. на суму грн.