Результат пошуку "012n03" : 22
Вид перегляду :
Мінімальне замовлення: 278
Мінімальне замовлення: 278
Мінімальне замовлення: 2
Мінімальне замовлення: 2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| BSB012N03LX3G | Infineon Technologies |
 Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V |
на замовлення 5508 шт: термін постачання 21-31 дні (днів) |
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| BSB012N03LX3GXUMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
на замовлення 4398 шт: термін постачання 21-31 дні (днів) |
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FDMC012N03 | onsemi / Fairchild |
MOSFETs PT9 N-ch 30V/12V Power Trench MOSFET |
на замовлення 3026 шт: термін постачання 21-30 дні (днів) |
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FDMC012N03 | onsemi |
Description: MOSFET N-CH 30V 35A/185A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V Power Dissipation (Max): 2.3W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V |
на замовлення 1834 шт: термін постачання 21-31 дні (днів) |
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| VUO30-12N03 | IXYS | CDH4-1 |
на замовлення 19 шт: термін постачання 14-28 дні (днів) |
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| VUO50-12N03 | IXYS | J3-1 |
на замовлення 20 шт: термін постачання 14-28 дні (днів) |
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| VUO50-12N03 | IXYS |
на замовлення 100 шт: термін постачання 14-28 дні (днів) |
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| VUO60-12N03 | MODULE |
на замовлення 153 шт: термін постачання 14-28 дні (днів) |
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| 10094012-N0300YYLF | Amphenol ICC (FCI) |
Description: CBL ASSY DENSISHD 16P-RJ45 9.84' Packaging: Bulk Connector Type: DensiShield™ 16 pos to RJ45, 8p8c Length: 9.84' (3.00m) Shielding: Shielded Cable Type: Round Part Status: Active |
товар відсутній |
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BSB012N03LX3 G | Infineon Technologies |
Description: MOSFET N-CH 30V 39A/180A 2WDSON Packaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V |
товар відсутній |
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BSB012N03LX3GXUMA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 39A 7-Pin WDSON T/R |
товар відсутній |
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| BSN012N03LSIXUSA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 50A 6-Pin USON |
товар відсутній |
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| BSN012N03LSXUSA1 | Infineon Technologies |
Trans MOSFET N-CH 30V 50A 6-Pin USON |
товар відсутній |
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| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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| FDMC012N03 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 117A Pulsed drain current: 688A Power dissipation: 64W Case: Power33 Gate-source voltage: ±12V On-state resistance: 1.77mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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FDMC012N03 | ON Semiconductor |
Trans MOSFET N-CH 30V 35A 8-Pin Power 33 EP T/R |
товар відсутній |
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FDMC012N03 | onsemi |
Description: MOSFET N-CH 30V 35A/185A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc) Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V Power Dissipation (Max): 2.3W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V |
товар відсутній |
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M2012SA2G30 | NKK Switches |
Toggle Switches SPDT ON-NONE-ON |
товар відсутній |
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| USB-A-PLUG RECTANGULAR | Panstrong Company Ltd. | USB-A-STECKER 90 |
товар відсутній |
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| USB-A-PLUG RECTANGULAR SMT | Panstrong Company Ltd. | USBAM0301-2N03 |
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VUO50-12NO3 | IXYS |
Description: BRIDGE RECT 3P 1.2KV 58A FO-F-B Packaging: Box Package / Case: FO-F-B Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 125°C (TJ) Technology: Standard Supplier Device Package: FO-F-B Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 58 A Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
товар відсутній |
| BSB012N03LX3G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
на замовлення 5508 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 278+ | 76.66 грн |
| BSB012N03LX3GXUMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 4398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 278+ | 76.66 грн |
| FDMC012N03 |
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Виробник: onsemi / Fairchild
MOSFETs PT9 N-ch 30V/12V Power Trench MOSFET
MOSFETs PT9 N-ch 30V/12V Power Trench MOSFET
на замовлення 3026 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 191.29 грн |
| 10+ | 163.47 грн |
| 25+ | 141.44 грн |
| 100+ | 118.22 грн |
| 500+ | 107.67 грн |
| 1000+ | 95.7 грн |
| 3000+ | 95 грн |
| FDMC012N03 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
на замовлення 1834 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 200.2 грн |
| 10+ | 162 грн |
| 100+ | 131.06 грн |
| 500+ | 109.33 грн |
| 1000+ | 93.62 грн |
| 10094012-N0300YYLF |
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Виробник: Amphenol ICC (FCI)
Description: CBL ASSY DENSISHD 16P-RJ45 9.84'
Packaging: Bulk
Connector Type: DensiShield™ 16 pos to RJ45, 8p8c
Length: 9.84' (3.00m)
Shielding: Shielded
Cable Type: Round
Part Status: Active
Description: CBL ASSY DENSISHD 16P-RJ45 9.84'
Packaging: Bulk
Connector Type: DensiShield™ 16 pos to RJ45, 8p8c
Length: 9.84' (3.00m)
Shielding: Shielded
Cable Type: Round
Part Status: Active
товар відсутній
| BSB012N03LX3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
товар відсутній
| BSB012N03LX3GXUMA1 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 39A 7-Pin WDSON T/R
Trans MOSFET N-CH 30V 39A 7-Pin WDSON T/R
товар відсутній
| BSN012N03LSIXUSA1 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 50A 6-Pin USON
Trans MOSFET N-CH 30V 50A 6-Pin USON
товар відсутній
| BSN012N03LSXUSA1 |
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Виробник: Infineon Technologies
Trans MOSFET N-CH 30V 50A 6-Pin USON
Trans MOSFET N-CH 30V 50A 6-Pin USON
товар відсутній
| FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| FDMC012N03 |
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Виробник: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 117A; Idm: 688A; 64W; Power33
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 117A
Pulsed drain current: 688A
Power dissipation: 64W
Case: Power33
Gate-source voltage: ±12V
On-state resistance: 1.77mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| FDMC012N03 |
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Виробник: ON Semiconductor
Trans MOSFET N-CH 30V 35A 8-Pin Power 33 EP T/R
Trans MOSFET N-CH 30V 35A 8-Pin Power 33 EP T/R
товар відсутній
| FDMC012N03 |
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Виробник: onsemi
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
Description: MOSFET N-CH 30V 35A/185A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
Rds On (Max) @ Id, Vgs: 1.23mOhm @ 35A, 10V
Power Dissipation (Max): 2.3W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8183 pF @ 15 V
товар відсутній
| VUO50-12NO3 |
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Виробник: IXYS
Description: BRIDGE RECT 3P 1.2KV 58A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: BRIDGE RECT 3P 1.2KV 58A FO-F-B
Packaging: Box
Package / Case: FO-F-B
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: Standard
Supplier Device Package: FO-F-B
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 58 A
Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 150 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
товар відсутній