Результат пошуку "2N344" : > 180
Вид перегляду :
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| 2N3440 | MICROSEMI |
TO-39/1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR 2N3440кількість в упаковці: 1 шт |
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JAN2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 Grade: Military Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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JAN2N3440L | Microchip Technology |
Description: TRANS NPN 250V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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| JAN2N3440L | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT _ TO-5 |
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JAN2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 2UA U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JAN2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 0 UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JAN2N3440UA | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT _ UA |
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| JAN2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Grade: Military Qualification: MIL-PRF-19500/369 |
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| JAN2N3441 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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| JAN2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Grade: Military Qualification: MIL-PRF-19500/370 |
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JAN2N3442 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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| JANHCB2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT |
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| JANKCB2N3440 | Microchip / Microsemi |
Bipolar Transistors - BJT 250 V Power BJT |
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JANKCB2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Tape & Reel (TR) Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANKCBD2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT |
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| JANKCBF2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT |
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| JANKCBL2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT |
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| JANKCBM2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT |
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| JANKCBP2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT |
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JANKCBR2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Tape & Reel (TR) Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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JANS2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANS2N3440 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT _ TO-39 |
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| JANS2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT _ TO-5 |
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| JANS2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 1A TO-5 Packaging: Bulk Part Status: Active |
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| JANS2N3440U4 | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT _ U4 |
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| JANS2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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JANS2N3440UA/TR | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANSD2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-39 |
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| JANSD2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-5 |
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JANSD2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANSL2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-39 |
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| JANSL2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-5 |
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JANSL2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANSM2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-39 |
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| JANSM2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-5 |
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JANSM2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANSP2N3440 | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-39 |
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| JANSP2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-5 |
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JANSP2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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JANSR2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Tray Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Grade: Military Qualification: MIL-PRF-19500/368 |
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JANSR2N3440 | Microchip / Microsemi |
Bipolar Transistors - BJT RH Power BJT _ TO-39 |
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| JANSR2N3440L | Microchip / Microsemi | Bipolar Transistors - BJT RH Power BJT _ TO-5 |
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JANSR2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 1A U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW |
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| JANSR2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 2UA UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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JANTX2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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JANTX2N3440L | Microchip Technology |
Description: TRANS NPN 250V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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| JANTX2N3440L | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT _ TO-5 |
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JANTX2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 2UA U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANTX2N3440UA | Microchip Technology |
Description: TRANS NPN 250V 1A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: UA Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
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| JANTX2N3440UA | Microchip / Microsemi | Bipolar Transistors - BJT Power BJT _ UA |
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| JANTX2N3441 | Microchip Technology |
Description: TRANS NPN 140V 3A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V Supplier Device Package: TO-66 (TO-213AA) Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3 W Grade: Military Qualification: MIL-PRF-19500/369 |
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| JANTX2N3441 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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JANTX2N3442 | Microchip Technology |
Description: TRANS NPN 140V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V Supplier Device Package: TO-3 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 6 W Qualification: MIL-PRF-19500/307 |
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JANTX2N3442 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
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JANTXV2N3440 | Microchip Technology |
Description: TRANS NPN 250V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-39 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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| JANTXV2N3440 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT _ TO-39 |
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JANTXV2N3440L | Microchip Technology |
Description: TRANS NPN 250V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Grade: Military Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Qualification: MIL-PRF-19500/368 |
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JANTXV2N3440U4 | Microchip Technology |
Description: TRANS NPN 250V 2UA U4 Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: U4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 250 V Power - Max: 800 mW Grade: Military Qualification: MIL-PRF-19500/368 |
товар відсутній |
| 2N3440 |
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Виробник: MICROSEMI
TO-39/1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR 2N3440
кількість в упаковці: 1 шт
TO-39/1000 mA, 250 V, NPN, Si, SMALL SIGNAL TRANSISTOR 2N3440
кількість в упаковці: 1 шт
товар відсутній
| JAN2N3440 |
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Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JAN2N3440L |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JAN2N3440L |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ TO-5
Bipolar Transistors - BJT Power BJT _ TO-5
товар відсутній
| JAN2N3440U4 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JAN2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 0 UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 0 UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JAN2N3441 |
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
товар відсутній
| JAN2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Grade: Military
Qualification: MIL-PRF-19500/370
товар відсутній
| JANKCB2N3440 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT 250 V Power BJT
Bipolar Transistors - BJT 250 V Power BJT
товар відсутній
| JANKCB2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANKCBR2N3440 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Tape & Reel (TR)
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANS2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANS2N3440 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ TO-39
Bipolar Transistors - BJT Power BJT _ TO-39
товар відсутній
| JANS2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ TO-5
Bipolar Transistors - BJT Power BJT _ TO-5
товар відсутній
| JANS2N3440U4 |
товар відсутній
| JANS2N3440U4 |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ U4
Bipolar Transistors - BJT Power BJT _ U4
товар відсутній
| JANS2N3440UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANS2N3440UA/TR |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSD2N3440 |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-39
Bipolar Transistors - BJT RH Power BJT _ TO-39
товар відсутній
| JANSD2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-5
Bipolar Transistors - BJT RH Power BJT _ TO-5
товар відсутній
| JANSD2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSL2N3440 |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-39
Bipolar Transistors - BJT RH Power BJT _ TO-39
товар відсутній
| JANSL2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-5
Bipolar Transistors - BJT RH Power BJT _ TO-5
товар відсутній
| JANSL2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSM2N3440 |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-39
Bipolar Transistors - BJT RH Power BJT _ TO-39
товар відсутній
| JANSM2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-5
Bipolar Transistors - BJT RH Power BJT _ TO-5
товар відсутній
| JANSM2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSP2N3440 |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-39
Bipolar Transistors - BJT RH Power BJT _ TO-39
товар відсутній
| JANSP2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-5
Bipolar Transistors - BJT RH Power BJT _ TO-5
товар відсутній
| JANSP2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSR2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Tray
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANSR2N3440 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-39
Bipolar Transistors - BJT RH Power BJT _ TO-39
товар відсутній
| JANSR2N3440L |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT RH Power BJT _ TO-5
Bipolar Transistors - BJT RH Power BJT _ TO-5
товар відсутній
| JANSR2N3440U4 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Description: TRANS NPN 250V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
товар відсутній
| JANSR2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 2UA UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTX2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTX2N3440L |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTX2N3440L |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ TO-5
Bipolar Transistors - BJT Power BJT _ TO-5
товар відсутній
| JANTX2N3440U4 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTX2N3440UA |
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: UA
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTX2N3440UA |
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ UA
Bipolar Transistors - BJT Power BJT _ UA
товар відсутній
| JANTX2N3441 |
Виробник: Microchip Technology
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
Description: TRANS NPN 140V 3A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 500mA, 4V
Supplier Device Package: TO-66 (TO-213AA)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3 W
Grade: Military
Qualification: MIL-PRF-19500/369
товар відсутній
| JANTX2N3442 |
|
Виробник: Microchip Technology
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/307
Description: TRANS NPN 140V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3A, 4V
Supplier Device Package: TO-3
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/307
товар відсутній
| JANTXV2N3440 |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTXV2N3440 |
|
Виробник: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT _ TO-39
Bipolar Transistors - BJT Power BJT _ TO-39
товар відсутній
| JANTXV2N3440L |
|
Виробник: Microchip Technology
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
товар відсутній
| JANTXV2N3440U4 |
Виробник: Microchip Technology
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Description: TRANS NPN 250V 2UA U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
товар відсутній