Результат пошуку "2n58" : > 180
Вид перегляду :
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
2N5822 TIN/LEAD | Central Semiconductor | Trans GP BJT NPN 60V 0.75A 3-Pin TO-92-18R |
товар відсутній |
||
2N5822 TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW |
товар відсутній |
||
2N5822 TRE PBFREE | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current |
товар відсутній |
||
2N5822 TRE TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current |
товар відсутній |
||
2N5823 APM PBFREE | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current |
товар відсутній |
||
2N5823 TIN/LEAD | Central Semiconductor | Trans GP BJT PNP 60V 0.75A 3-Pin TO-92-18R |
товар відсутній |
||
2N5823 TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT PNP 70Vcbo 70Vces 60Vceo 5.0Vebo 750mA |
товар відсутній |
||
2N5823 TRE PBFREE | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current |
товар відсутній |
||
2N5823 TRE TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current |
товар відсутній |
||
2N5830 | ON Semiconductor | Trans GP BJT NPN 100V 0.2A 3-Pin TO-92 Bulk |
товар відсутній |
||
2N5830 | onsemi |
Description: TRANS NPN 100V 0.2A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 625 mW |
товар відсутній |
||
2N5830_D26Z | onsemi |
Description: TRANS NPN 100V 0.2A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 625 mW |
товар відсутній |
||
2N5838 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
товар відсутній |
||
2N5838 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5839 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk |
товар відсутній |
||
2N5839 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5840 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Part Status: Active |
товар відсутній |
||
2N5840 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5853 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-61 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
товар відсутній |
||
2N5853 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5854 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Supplier Device Package: TO-61 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 115 W |
товар відсутній |
||
2N5854 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5861 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
товар відсутній |
||
2N5867 | Microchip Technology | Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5867 | Microchip Technology | Trans GP BJT PNP 60V 5A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5867 | Microchip Technology |
Description: TRANS PNP 60V 5A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 87.5 W |
товар відсутній |
||
2N5868 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5868 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5871 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5871 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5872 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5872 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5873 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5873 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5874 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5874 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5875 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5875 | Microchip Technology | Trans GP BJT PNP 60V 10A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5875 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5876 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5876 | Microchip Technology | Trans GP BJT PNP 80V 10A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5876 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5877 | Microchip Technology | Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5877 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5877 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5878 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5878 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5878 PBFREE | Central Semiconductor Corp |
Description: TRANS NPN 80V 10A TO3 Packaging: Tube Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 4MHz Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W |
товар відсутній |
||
2N5879 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5879 | Microchip Technology | Trans GP BJT PNP 60V 15A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5879 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5880 | Microchip Technology |
Description: PNP POWER TRANSISTOR SILICON AMP Packaging: Bulk |
товар відсутній |
||
2N5880 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5881 | Microchip Technology |
Description: TRANS NPN 60V 15A Packaging: Bulk Transistor Type: NPN Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 160 W |
товар відсутній |
||
2N5881 | Semelab | Trans GP BJT NPN 60V 15A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5881 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5882 | Microchip Technology |
Description: NPN POWER TRANSISTOR SILICON AMP Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 160 W |
товар відсутній |
||
2N5882 | Microchip Technology | Trans GP BJT NPN 80V 15A 3-Pin(2+Tab) TO-3 |
товар відсутній |
||
2N5882 | Microchip Technology | Bipolar Transistors - BJT Power BJT |
товар відсутній |
||
2N5883 | Microchip Technology | Trans GP BJT PNP 60V 25A 3-Pin(2+Tab) TO-3 |
товар відсутній |
2N5822 TIN/LEAD |
Виробник: Central Semiconductor
Trans GP BJT NPN 60V 0.75A 3-Pin TO-92-18R
Trans GP BJT NPN 60V 0.75A 3-Pin TO-92-18R
товар відсутній
2N5822 TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW
Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW
товар відсутній
2N5822 TRE PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
товар відсутній
2N5822 TRE TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) NPN High Current
товар відсутній
2N5823 APM PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
товар відсутній
2N5823 TIN/LEAD |
Виробник: Central Semiconductor
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92-18R
Trans GP BJT PNP 60V 0.75A 3-Pin TO-92-18R
товар відсутній
2N5823 TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT PNP 70Vcbo 70Vces 60Vceo 5.0Vebo 750mA
Bipolar Transistors - BJT PNP 70Vcbo 70Vces 60Vceo 5.0Vebo 750mA
товар відсутній
2N5823 TRE PBFREE |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
товар відсутній
2N5823 TRE TIN/LEAD |
Виробник: Central Semiconductor
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
Bipolar Transistors - BJT Through-Hole Transistor-Small Signal (<=1A) PNP High Current
товар відсутній
2N5830 |
Виробник: onsemi
Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
товар відсутній
2N5830_D26Z |
Виробник: onsemi
Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
Description: TRANS NPN 100V 0.2A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 625 mW
товар відсутній
2N5840 |
товар відсутній
2N5853 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
2N5854 |
Виробник: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MA, TO-210AC, TO-61-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Supplier Device Package: TO-61
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 115 W
товар відсутній
2N5867 |
Виробник: Microchip Technology
Description: TRANS PNP 60V 5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 87.5 W
Description: TRANS PNP 60V 5A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 87.5 W
товар відсутній
2N5868 |
товар відсутній
2N5871 |
товар відсутній
2N5872 |
товар відсутній
2N5873 |
товар відсутній
2N5874 |
товар відсутній
2N5875 |
товар відсутній
2N5876 |
товар відсутній
2N5877 |
товар відсутній
2N5878 |
товар відсутній
2N5878 PBFREE |
Виробник: Central Semiconductor Corp
Description: TRANS NPN 80V 10A TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Description: TRANS NPN 80V 10A TO3
Packaging: Tube
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.5A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
товар відсутній
2N5879 |
товар відсутній
2N5880 |
товар відсутній
2N5881 |
Виробник: Microchip Technology
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
Description: TRANS NPN 60V 15A
Packaging: Bulk
Transistor Type: NPN
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 160 W
товар відсутній
2N5882 |
Виробник: Microchip Technology
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
Description: NPN POWER TRANSISTOR SILICON AMP
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 160 W
товар відсутній