Виробник: INFINEON TECHNOLOGIES
DZ950N44K Diode modules

Виробник: E-SWITCH
Category: Rocker Switches
Description: ROCKER; DPST; Pos: 2; OFF-ON; 8A/250VAC; Backlight colour: amber
Operating temperature: -20...55°C
Manufacturer series: RB2
Type of switch: ROCKER
Contacts configuration: DPST
AC contacts rating @R: 8A / 250V AC
Switching method: OFF-ON
Stable positions number: 2
Backlight colour: amber
Number of positions: 2
Mounting: on panel
Max. contact resistance:: 20mΩ
Min. insulation resistance: 0.1GΩ
Body dimensions: 31.6x25x29mm
Mounting hole diameter: 30x22mm
Leads: connectors 4,8x0,8mm
Electrical life: 6000 cycles
кількість в упаковці: 1 шт

Виробник: OPTIBELT
SPZ-950 Mechanical Power Transmission

Виробник: OPTIBELT
XPZ-950-XEP Mechanical Power Transmission

Виробник: TELEMECANIQUE SENSORS
XY2CZ9550 Line Operated Safety Switches

Виробник: MICROCHIP TECHNOLOGY
KSZ9563RNXC ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9563RNXC-TR ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9563RNXI ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9563RNXI-TR ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9567RTXI ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9567RTXI-TR ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9567STXI ETHERNET interfaces -integrated circuits

Виробник: MICROCHIP TECHNOLOGY
KSZ9567STXI-TR ETHERNET interfaces -integrated circuits

Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт

Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -20V; -300mA; Idm: -2A
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -300mA
Pulsed drain current: -2A
Case: DFN1006-3; SOT883
Gate-source voltage: ±8V
On-state resistance: 2.1Ω
Mounting: SMD
Gate charge: 2.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 10000 шт

Виробник: AnlaTech/IH
Індуктивності, дроселі > Фільтри SMD
Опір(DCR): 8,5x3,1x2,54 mm
Типорозмір: супресор, 45 Ом при 25МГц, 95 Ом при 100МГц, Rdc=0,9 мОм

Виробник: AD
Мікросхеми > Операційні підсилювачі
Корпус: MSOP-8
Vc, V: 5,5 V
BW,MHz: 25 MHz Video Bandwidth