Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (9740) > Сторінка 160 з 163
| Фото | Назва | Виробник | Інформація |
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| S2M0025120K | SMC DIODE SOLUTIONS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W Mounting: THT Features of semiconductor devices: Kelvin terminal Gate charge: 130nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 250A Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 39A On-state resistance: 41mΩ Type of transistor: N-MOSFET Power dissipation: 517W Polarisation: unipolar Kind of package: tube |
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| S3MBTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.2V; Ir: 5uA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Case: SMB Max. forward voltage: 1.2V Kind of package: reel; tape Capacitance: 60pF Leakage current: 5µA |
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| SMCJ43CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 21.7A; bidirectional; SMC; reel; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 21.7A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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| ST30150C | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.79V Max. forward impulse current: 200A Kind of package: tube |
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| ST860STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277B; SMD; 60V; 8A; reel,tape Max. off-state voltage: 60V Max. forward voltage: 0.55V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 140A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO277B |
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| ST880STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277B; SMD; 80V; 8A; reel,tape Max. off-state voltage: 80V Max. forward voltage: 0.62V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 140A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO277B |
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| ST8100STR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; TO277B; SMD; 100V; 8A; reel,tape Max. off-state voltage: 100V Max. forward voltage: 0.62V Load current: 8A Semiconductor structure: single diode Max. forward impulse current: 150A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Case: TO277B |
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| SDURF2030CTR | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common anode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 20A Leakage current: 30µA Reverse recovery time: 45ns |
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| SDURF2030CT | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 20A Leakage current: 30µA Reverse recovery time: 45ns |
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SK220ATR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape Case: SMA Capacitance: 170pF Max. off-state voltage: 200V Max. forward voltage: 0.9V Load current: 2A Semiconductor structure: single diode Max. forward impulse current: 50A Leakage current: 0.5mA Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
на замовлення 12728 шт: термін постачання 21-30 дні (днів) |
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| MBRF1080CTR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A Semiconductor structure: common anode; double Case: ITO220AB Kind of package: tube Leakage current: 1mA Capacitance: 300pF Max. forward voltage: 0.95V Max. forward impulse current: 120A |
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| MBRF15200CT | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15A; ITO220AB; Ufmax: 980mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 15A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.98V Max. forward impulse current: 130A Leakage current: 1mA Capacitance: 150pF Kind of package: tube |
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| SDURF1030CT | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 10A Leakage current: 30µA Reverse recovery time: 45ns |
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| SDURF1030CTR | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 5A x2 Semiconductor structure: common anode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 1.3V Max. load current: 10A Leakage current: 30µA Reverse recovery time: 45ns |
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| SDURF1030 | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 10A; tube; TO220FP-2; Ufmax: 1.3V; 45ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FP-2 Max. forward voltage: 1.3V Leakage current: 30µA Reverse recovery time: 45ns |
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| 1.5KE75ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64.1V Breakdown voltage: 71.3...78.8V Max. forward impulse current: 14.8A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
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S2M0080120N | SMC DIODE SOLUTIONS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 25A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 137mΩ Pulsed drain current: 82A Power dissipation: 176W Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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GS1KTR | SMC DIODE SOLUTIONS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.1V; Ir: 5uA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.1V Kind of package: reel; tape Leakage current: 5µA Capacitance: 15pF |
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SMAJ120ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2.1A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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SMAJ120CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 2.1A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Kind of package: reel Manufacturer series: SMAJ Leakage current: 5µA |
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| SMCJ33ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 28.2A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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| TPK15KP150A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 15kW; 167÷185V; 62A; unidirectional; SPD4; bulk; TPK15KP Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 62A Semiconductor structure: unidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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| TPK15KP150CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 15kW; 167÷185V; 62A; bidirectional; SPD4; bulk; TPK15KP Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 62A Semiconductor structure: bidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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| TPK15KP15A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; unidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 618A Semiconductor structure: unidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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| TPK15KP15CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 618A Semiconductor structure: bidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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| 15SQ050TR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 50V; 15A; R6; Ufmax: 680mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.68V Max. forward impulse current: 0.3kA Leakage current: 0.5mA Kind of package: reel; tape |
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| S2M0160120J | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W Drain-source voltage: 1.2kV Drain current: 11A On-state resistance: 0.3Ω Type of transistor: N-MOSFET Power dissipation: 122W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: Kelvin terminal Gate charge: 26.5nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Pulsed drain current: 40A Mounting: SMD Case: D2PAK-7 |
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| TPK15KP17CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 15kW; 18.9÷20.9V; 543A; bidirectional; SPD4; bulk Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 543A Semiconductor structure: bidirectional Case: SPD4 Mounting: SMD Leakage current: 10µA Kind of package: bulk Manufacturer series: TPK15KP |
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| UG4KB80TB | SMC DIODE SOLUTIONS |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 4A Max. forward impulse current: 120A Version: flat Case: D3K Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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| 30CPQ150 | SMC DIODE SOLUTIONS |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 1V Max. forward impulse current: 408A Leakage current: 0.5mA Kind of package: tube Capacitance: 760pF |
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| STD10100CTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 10A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 100V Load current: 10A Semiconductor structure: common cathode; double Max. forward voltage: 0.68V Max. forward impulse current: 120A Kind of package: reel; tape |
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P4SMF16CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; bidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.4A Semiconductor structure: bidirectional Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel Manufacturer series: P4SMF |
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| 5.0SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 252A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| 5.0SMCJ12CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; bidirectional; SMC; reel; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 252A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.8mA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| 5.0SMCJ13CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 14.4÷15.9V; 233A; bidirectional; SMC; reel; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 233A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 0.5mA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| 5.0SMCJ16CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 17.8÷19.7V; 193A; bidirectional; SMC; reel; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 193A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 50µA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| 5.0SMCJ26CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 119A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| 5.0SMCJ45CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 5kW; 50÷55.3V; 68.8A; bidirectional; SMC; reel; 5.0SMCJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 68.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: 5.0SMCJ |
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| STW30200C | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO247-3; Ufmax: 720mV Case: TO247-3 Mounting: THT Kind of package: tube Max. off-state voltage: 200V Max. load current: 30A Max. forward voltage: 0.72V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 200A Type of diode: Schottky rectifying |
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| MBRD630CTTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 6A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 30V Load current: 6A Semiconductor structure: common cathode; double Capacitance: 220pF Max. forward voltage: 0.9V Leakage current: 0.1mA Max. forward impulse current: 75A Kind of package: reel; tape |
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| MBRD650CTTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 6A; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 50V Load current: 6A Semiconductor structure: common cathode; double Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 75A Max. forward voltage: 0.9V Capacitance: 200pF |
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S3M0040120D | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
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S3M0016120D | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 732W Polarisation: unipolar Gate charge: 287nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
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| S3M0025120T | SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: TOLL Kind of package: reel; tape Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 517W Polarisation: unipolar Gate charge: 175nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 200A |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| S3M0025120D | SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W Mounting: THT Case: TO247-3 Kind of package: tube Drain-source voltage: 1.2kV Drain current: 54A On-state resistance: 36mΩ Type of transistor: N-MOSFET Power dissipation: 517W Polarisation: unipolar Gate charge: 175nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 200A |
на замовлення 20 шт: термін постачання 21-30 дні (днів) |
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| SDURF3060CT | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 2.03V Max. load current: 30A Leakage current: 0.1mA Reverse recovery time: 50ns |
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В кошику од. на суму грн. | |||||||||||
| SDURF3060CTR | SMC DIODE SOLUTIONS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A x2 Semiconductor structure: common anode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Case: TO220FPAB Max. forward voltage: 2.03V Max. load current: 30A Leakage current: 0.1mA Reverse recovery time: 50ns |
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В кошику од. на суму грн. | |||||||||||
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MBRB1545CTTR | SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A Semiconductor structure: common cathode; double Max. forward voltage: 0.84V Max. forward impulse current: 180A Kind of package: reel; tape Leakage current: 1mA Capacitance: 400pF |
на замовлення 794 шт: термін постачання 21-30 дні (днів) |
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SMAJ85ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
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В кошику од. на суму грн. | ||||||||||
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SMAJ85CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 94.4...104V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMAJ |
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В кошику од. на суму грн. | ||||||||||
| SMBJ8.0ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; unidirectional; SMB; reel Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 44.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel Manufacturer series: SMBJ |
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В кошику од. на суму грн. | |||||||||||
| SMBJ8.0CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 44.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel Manufacturer series: SMBJ |
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В кошику од. на суму грн. | |||||||||||
| SMCJ12ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMCJ |
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В кошику од. на суму грн. | |||||||||||
| SMBJ22CATR | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 16.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel Manufacturer series: SMBJ |
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В кошику од. на суму грн. | |||||||||||
| ST1545AXTR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 540mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A Semiconductor structure: single diode Case: R6 Max. forward voltage: 0.54V Max. forward impulse current: 200A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||
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P4SMF120A | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; SOD123F; reel Type of diode: TVS Peak pulse power dissipation: 0.4kW Semiconductor structure: unidirectional Case: SOD123F Mounting: SMD Kind of package: reel Manufacturer series: P4SMF Max. forward impulse current: 1A Breakdown voltage: 133...147V Leakage current: 1µA Max. off-state voltage: 120V |
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В кошику од. на суму грн. | ||||||||||
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P4SMF120CA | SMC DIODE SOLUTIONS |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.4kW; 133÷147V; 1A; bidirectional; SOD123F; reel; P4SMF Type of diode: TVS Peak pulse power dissipation: 0.4kW Semiconductor structure: bidirectional Case: SOD123F Mounting: SMD Kind of package: reel Manufacturer series: P4SMF Max. forward impulse current: 1A Breakdown voltage: 133...147V Leakage current: 1µA Max. off-state voltage: 120V |
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В кошику од. на суму грн. | ||||||||||
| 1.5KE13ATR | SMC DIODE SOLUTIONS |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 12.4÷13.7V; 83.5A; unidirectional; DO201AD; reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 11.1V Breakdown voltage: 12.4...13.7V Max. forward impulse current: 83.5A Semiconductor structure: unidirectional Case: DO201AD Mounting: THT Leakage current: 5µA Kind of package: reel Manufacturer series: 1.5KE |
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В кошику од. на суму грн. | |||||||||||
| MBRF20150CTL | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 950mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 20A Semiconductor structure: common cathode; double Case: ITO220AB Max. forward voltage: 0.95V Max. forward impulse current: 220A Leakage current: 1mA Capacitance: 400pF Kind of package: tube |
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В кошику од. на суму грн. | |||||||||||
| MBRF20150CTR | SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 900mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 20A Semiconductor structure: common anode; double Case: ITO220AB Max. forward voltage: 0.9V Max. forward impulse current: 150A Leakage current: 1mA Capacitance: 400pF Kind of package: tube |
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В кошику од. на суму грн. |
| S2M0025120K |
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Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 130nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 250A; 517W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Gate charge: 130nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 250A
Case: TO247-4
Drain-source voltage: 1.2kV
Drain current: 39A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Kind of package: tube
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| S3MBTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.2V; Ir: 5uA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 60pF
Leakage current: 5µA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; SMB; Ufmax: 1.2V; Ir: 5uA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.2V
Kind of package: reel; tape
Capacitance: 60pF
Leakage current: 5µA
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| SMCJ43CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 21.7A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 21.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 47.8÷52.8V; 21.7A; bidirectional; SMC; reel; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 21.7A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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| ST30150C |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.79V
Max. forward impulse current: 200A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO220AB; Ufmax: 790mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.79V
Max. forward impulse current: 200A
Kind of package: tube
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| ST860STR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 60V; 8A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 60V; 8A; reel,tape
Max. off-state voltage: 60V
Max. forward voltage: 0.55V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
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| ST880STR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 80V; 8A; reel,tape
Max. off-state voltage: 80V
Max. forward voltage: 0.62V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 80V; 8A; reel,tape
Max. off-state voltage: 80V
Max. forward voltage: 0.62V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 140A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
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| ST8100STR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 100V; 8A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.62V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277B; SMD; 100V; 8A; reel,tape
Max. off-state voltage: 100V
Max. forward voltage: 0.62V
Load current: 8A
Semiconductor structure: single diode
Max. forward impulse current: 150A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: TO277B
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| SDURF2030CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
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| SDURF2030CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 20A
Leakage current: 30µA
Reverse recovery time: 45ns
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| SK220ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Case: SMA
Capacitance: 170pF
Max. off-state voltage: 200V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 200V; 2A; reel,tape
Case: SMA
Capacitance: 170pF
Max. off-state voltage: 200V
Max. forward voltage: 0.9V
Load current: 2A
Semiconductor structure: single diode
Max. forward impulse current: 50A
Leakage current: 0.5mA
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
на замовлення 12728 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.60 грн |
| 100+ | 4.92 грн |
| 235+ | 3.94 грн |
| 645+ | 3.73 грн |
| MBRF1080CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: common anode; double
Case: ITO220AB
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
Max. forward voltage: 0.95V
Max. forward impulse current: 120A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Semiconductor structure: common anode; double
Case: ITO220AB
Kind of package: tube
Leakage current: 1mA
Capacitance: 300pF
Max. forward voltage: 0.95V
Max. forward impulse current: 120A
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| MBRF15200CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15A; ITO220AB; Ufmax: 980mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 130A
Leakage current: 1mA
Capacitance: 150pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15A; ITO220AB; Ufmax: 980mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.98V
Max. forward impulse current: 130A
Leakage current: 1mA
Capacitance: 150pF
Kind of package: tube
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| SDURF1030CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
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| SDURF1030CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5Ax2; tube; TO220FPAB; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 1.3V
Max. load current: 10A
Leakage current: 30µA
Reverse recovery time: 45ns
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| SDURF1030 |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; TO220FP-2; Ufmax: 1.3V; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FP-2
Max. forward voltage: 1.3V
Leakage current: 30µA
Reverse recovery time: 45ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10A; tube; TO220FP-2; Ufmax: 1.3V; 45ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FP-2
Max. forward voltage: 1.3V
Leakage current: 30µA
Reverse recovery time: 45ns
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| 1.5KE75ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 14.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 71.3÷78.8V; 14.8A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3...78.8V
Max. forward impulse current: 14.8A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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| S2M0080120N |
|
Виробник: SMC DIODE SOLUTIONS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 176W
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 25A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 137mΩ
Pulsed drain current: 82A
Power dissipation: 176W
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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| GS1KTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.1V; Ir: 5uA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 5µA
Capacitance: 15pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; Ufmax: 1.1V; Ir: 5uA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.1V
Kind of package: reel; tape
Leakage current: 5µA
Capacitance: 15pF
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| SMAJ120ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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| SMAJ120CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 2.1A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 2.1A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Kind of package: reel
Manufacturer series: SMAJ
Leakage current: 5µA
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| SMCJ33ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 36.7÷40.6V; 28.2A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 28.2A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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| TPK15KP150A |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 167÷185V; 62A; unidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 167÷185V; 62A; unidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 62A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| TPK15KP150CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 167÷185V; 62A; bidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 167÷185V; 62A; bidirectional; SPD4; bulk; TPK15KP
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 62A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| TPK15KP15A |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; unidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: unidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| TPK15KP15CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 16.7÷18.5V; 618A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 618A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| 15SQ050TR |
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 15A; R6; Ufmax: 680mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.68V
Max. forward impulse current: 0.3kA
Leakage current: 0.5mA
Kind of package: reel; tape
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| S2M0160120J |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Drain-source voltage: 1.2kV
Drain current: 11A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 122W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: D2PAK-7
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 40A; 122W
Drain-source voltage: 1.2kV
Drain current: 11A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Power dissipation: 122W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: Kelvin terminal
Gate charge: 26.5nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -5...20V
Pulsed drain current: 40A
Mounting: SMD
Case: D2PAK-7
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| TPK15KP17CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 18.9÷20.9V; 543A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 543A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 15kW; 18.9÷20.9V; 543A; bidirectional; SPD4; bulk
Type of diode: TVS
Peak pulse power dissipation: 15kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 543A
Semiconductor structure: bidirectional
Case: SPD4
Mounting: SMD
Leakage current: 10µA
Kind of package: bulk
Manufacturer series: TPK15KP
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| UG4KB80TB |
|
Виробник: SMC DIODE SOLUTIONS
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 120A
Version: flat
Case: D3K
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| 30CPQ150 | |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Max. forward impulse current: 408A
Leakage current: 0.5mA
Kind of package: tube
Capacitance: 760pF
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30A; TO247AD; Ufmax: 1V; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 1V
Max. forward impulse current: 408A
Leakage current: 0.5mA
Kind of package: tube
Capacitance: 760pF
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| STD10100CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. forward impulse current: 120A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 100V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.68V
Max. forward impulse current: 120A
Kind of package: reel; tape
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| P4SMF16CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; bidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; bidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel
Manufacturer series: P4SMF
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| 5.0SMCJ12ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| 5.0SMCJ12CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 13.3÷14.7V; 252A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 252A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| 5.0SMCJ13CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 233A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 233A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 14.4÷15.9V; 233A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 233A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 0.5mA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| 5.0SMCJ16CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 17.8÷19.7V; 193A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 193A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 17.8÷19.7V; 193A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 193A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| 5.0SMCJ26CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 28.9÷31.9V; 119A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 119A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| 5.0SMCJ45CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 50÷55.3V; 68.8A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 68.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 50÷55.3V; 68.8A; bidirectional; SMC; reel; 5.0SMCJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 68.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 5.0SMCJ
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| STW30200C |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO247-3; Ufmax: 720mV
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 15Ax2; TO247-3; Ufmax: 720mV
Case: TO247-3
Mounting: THT
Kind of package: tube
Max. off-state voltage: 200V
Max. load current: 30A
Max. forward voltage: 0.72V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 200A
Type of diode: Schottky rectifying
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| MBRD630CTTR |
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 6A
Semiconductor structure: common cathode; double
Capacitance: 220pF
Max. forward voltage: 0.9V
Leakage current: 0.1mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 30V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 30V
Load current: 6A
Semiconductor structure: common cathode; double
Capacitance: 220pF
Max. forward voltage: 0.9V
Leakage current: 0.1mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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| MBRD650CTTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 6A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Capacitance: 200pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 6A; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 6A
Semiconductor structure: common cathode; double
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 75A
Max. forward voltage: 0.9V
Capacitance: 200pF
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| S3M0040120D |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 404.76 грн |
| S3M0016120D |
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 732W
Polarisation: unipolar
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 732W
Polarisation: unipolar
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 868.91 грн |
| 2+ | 646.90 грн |
| 4+ | 611.44 грн |
| S3M0025120T |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TOLL
Kind of package: reel; tape
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Gate charge: 175nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TOLL
Kind of package: reel; tape
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Gate charge: 175nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 547.31 грн |
| 3+ | 409.73 грн |
| 7+ | 386.88 грн |
| S3M0025120D |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Gate charge: 175nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 54A; Idm: 200A; 517W
Mounting: THT
Case: TO247-3
Kind of package: tube
Drain-source voltage: 1.2kV
Drain current: 54A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
Power dissipation: 517W
Polarisation: unipolar
Gate charge: 175nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 200A
на замовлення 20 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 584.65 грн |
| 3+ | 436.52 грн |
| 6+ | 412.88 грн |
| SDURF3060CT |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 2.03V
Max. load current: 30A
Leakage current: 0.1mA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 2.03V
Max. load current: 30A
Leakage current: 0.1mA
Reverse recovery time: 50ns
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| SDURF3060CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 2.03V
Max. load current: 30A
Leakage current: 0.1mA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15Ax2; tube; TO220FPAB; Ufmax: 2.03V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A x2
Semiconductor structure: common anode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Case: TO220FPAB
Max. forward voltage: 2.03V
Max. load current: 30A
Leakage current: 0.1mA
Reverse recovery time: 50ns
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| MBRB1545CTTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 400pF
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.84V
Max. forward impulse current: 180A
Kind of package: reel; tape
Leakage current: 1mA
Capacitance: 400pF
на замовлення 794 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.46 грн |
| 13+ | 31.36 грн |
| 25+ | 28.37 грн |
| 41+ | 22.53 грн |
| 112+ | 21.35 грн |
| SMAJ85ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; unidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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| SMAJ85CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 94.4÷104V; 2.9A; bidirectional; SMA; reel; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4...104V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMAJ
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| SMBJ8.0ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; unidirectional; SMB; reel
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: SMBJ
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| SMBJ8.0CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.2A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8V
Breakdown voltage: 8.89...9.83V
Max. forward impulse current: 44.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel
Manufacturer series: SMBJ
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| SMCJ12ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; SMC; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMCJ
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| SMBJ22CATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 24.4÷26.9V; 16.9A; bidirectional; SMB; reel; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 16.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel
Manufacturer series: SMBJ
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| ST1545AXTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 540mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.54V
Max. forward impulse current: 200A
Kind of package: reel; tape
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; R6; Ufmax: 540mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: R6
Max. forward voltage: 0.54V
Max. forward impulse current: 200A
Kind of package: reel; tape
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| P4SMF120A |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. forward impulse current: 1A
Breakdown voltage: 133...147V
Leakage current: 1µA
Max. off-state voltage: 120V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; SOD123F; reel
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. forward impulse current: 1A
Breakdown voltage: 133...147V
Leakage current: 1µA
Max. off-state voltage: 120V
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| P4SMF120CA |
|
Виробник: SMC DIODE SOLUTIONS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; bidirectional; SOD123F; reel; P4SMF
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. forward impulse current: 1A
Breakdown voltage: 133...147V
Leakage current: 1µA
Max. off-state voltage: 120V
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; bidirectional; SOD123F; reel; P4SMF
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Case: SOD123F
Mounting: SMD
Kind of package: reel
Manufacturer series: P4SMF
Max. forward impulse current: 1A
Breakdown voltage: 133...147V
Leakage current: 1µA
Max. off-state voltage: 120V
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| 1.5KE13ATR |
|
Виробник: SMC DIODE SOLUTIONS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12.4÷13.7V; 83.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 83.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12.4÷13.7V; 83.5A; unidirectional; DO201AD; reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 11.1V
Breakdown voltage: 12.4...13.7V
Max. forward impulse current: 83.5A
Semiconductor structure: unidirectional
Case: DO201AD
Mounting: THT
Leakage current: 5µA
Kind of package: reel
Manufacturer series: 1.5KE
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| MBRF20150CTL |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 220A
Leakage current: 1mA
Capacitance: 400pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 950mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: common cathode; double
Case: ITO220AB
Max. forward voltage: 0.95V
Max. forward impulse current: 220A
Leakage current: 1mA
Capacitance: 400pF
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
| MBRF20150CTR |
|
Виробник: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: common anode; double
Case: ITO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Leakage current: 1mA
Capacitance: 400pF
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 20A; ITO220AB; Ufmax: 900mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 20A
Semiconductor structure: common anode; double
Case: ITO220AB
Max. forward voltage: 0.9V
Max. forward impulse current: 150A
Leakage current: 1mA
Capacitance: 400pF
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.