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MBR2090CT MBR2090CT SMC Diode Solutions MBR2080-100CT%20N0623%20REV.B.pdf Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
товару немає в наявності
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ER5E ER5E SMC Diode Solutions ER5(A-J)%20N0994%20REV.A.pdf Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
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S2M0016120D-1 S2M0016120D-1 SMC Diode Solutions S2M0016120D-1%20N2762%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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S2M0016120K-1 S2M0016120K-1 SMC Diode Solutions S2M0016120K-1%20N2705%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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30BQ015 30BQ015 SMC Diode Solutions 30BQ015%20N0025%20REV.A.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
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10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
3000+4.93 грн
6000+4.28 грн
9000+4.04 грн
15000+3.54 грн
21000+3.39 грн
30000+3.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 55441 шт:
термін постачання 21-31 дні (днів)
15+22.92 грн
23+13.79 грн
100+8.65 грн
500+6.01 грн
1000+5.33 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
S3M0040120J S3M0040120J SMC Diode Solutions S3M0040120J%20N2801%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0016120B S3M0016120B SMC Diode Solutions S3M0016120B%20N2823%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
товару немає в наявності
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SICRB10650CT SICRB10650CT SMC Diode Solutions SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
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SMBJ13A SMBJ13A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
3000+10.77 грн
6000+9.47 грн
9000+9.02 грн
15000+7.98 грн
21000+7.70 грн
30000+7.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 32418 шт:
термін постачання 21-31 дні (днів)
8+46.66 грн
12+27.82 грн
100+17.85 грн
500+12.70 грн
1000+11.39 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
ST6045C ST6045C SMC Diode Solutions ST6045C%20N2583%20REV.-.pdf Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
товару немає в наявності
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10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
5000+3.47 грн
10000+3.02 грн
15000+2.85 грн
25000+2.50 грн
35000+2.39 грн
50000+2.29 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 93292 шт:
термін постачання 21-31 дні (днів)
19+18.01 грн
30+10.80 грн
100+6.72 грн
500+4.64 грн
1000+4.09 грн
2000+3.64 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
3000+4.94 грн
6000+4.29 грн
9000+4.05 грн
15000+3.55 грн
21000+3.40 грн
30000+3.25 грн
75000+2.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 117093 шт:
термін постачання 21-31 дні (днів)
14+23.74 грн
23+13.79 грн
100+8.67 грн
500+6.02 грн
1000+5.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
3000+4.94 грн
6000+4.29 грн
9000+4.05 грн
15000+3.55 грн
21000+3.40 грн
30000+3.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 51219 шт:
термін постачання 21-31 дні (днів)
14+23.74 грн
23+13.79 грн
100+8.67 грн
500+6.02 грн
1000+5.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ100 10BQ100 SMC Diode Solutions 10BQ100%20N0646%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+5.09 грн
6000+4.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ100 10BQ100 SMC Diode Solutions 10BQ100%20N0646%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 9143 шт:
термін постачання 21-31 дні (днів)
14+23.74 грн
23+14.27 грн
100+8.91 грн
500+6.20 грн
1000+5.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+7.00 грн
6000+6.11 грн
9000+5.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 11929 шт:
термін постачання 21-31 дні (днів)
11+31.92 грн
17+18.92 грн
100+11.98 грн
500+8.41 грн
1000+7.49 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
3.0SMCJ5.0A 3.0SMCJ5.0A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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S3M0040120D S3M0040120D SMC Diode Solutions S3M0040120D%20N2817%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0040120K S3M0040120K SMC Diode Solutions S3M0040120K%20N2759%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0025120D S3M0025120D SMC Diode Solutions S3M0025120D%20N2816%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0025120K S3M0025120K SMC Diode Solutions S3M0025120K%20N2774%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+1038.72 грн
10+699.86 грн
100+529.97 грн
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S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0040120N S3M0040120N SMC Diode Solutions S3M0040120N%20N2800%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120N S3M0016120N SMC Diode Solutions S3M0016120N%20N2799%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SD125SC150A.T1 SD125SC150A.T1 SMC Diode Solutions SD125SC150A%20D0067%20REV.-.pdf Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
2+190.72 грн
10+117.84 грн
25+100.42 грн
100+75.53 грн
300+64.64 грн
Мінімальне замовлення: 2
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8TQ100 8TQ100 SMC Diode Solutions 8TQ080-100(S)%20N0639%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
4+96.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
sm712 sm712 SMC Diode Solutions SM712%20N2270%20REV.A.pdf Description: TVS DIODE 12VWM 7VWM SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
3000+4.12 грн
6000+3.56 грн
9000+3.36 грн
15000+2.93 грн
21000+2.80 грн
30000+2.68 грн
75000+2.37 грн
150000+2.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
sm712 sm712 SMC Diode Solutions SM712%20N2270%20REV.A.pdf Description: TVS DIODE 12VWM 7VWM SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 163044 шт:
термін постачання 21-31 дні (днів)
17+19.64 грн
27+11.74 грн
100+7.31 грн
500+5.05 грн
1000+4.47 грн
Мінімальне замовлення: 17
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ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+3.36 грн
10000+2.91 грн
Мінімальне замовлення: 5000
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ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 21882 шт:
термін постачання 21-31 дні (днів)
19+18.01 грн
31+10.48 грн
100+6.52 грн
500+4.49 грн
1000+3.96 грн
2000+3.52 грн
Мінімальне замовлення: 19
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UF4004 UF4004 SMC Diode Solutions UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4005 UF4005 SMC Diode Solutions UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MBRF10200CT MBRF10200CT SMC Diode Solutions MBRF10200CT%20N0079%20REV.B.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1855 шт:
термін постачання 21-31 дні (днів)
5+73.67 грн
50+32.82 грн
100+29.05 грн
500+21.05 грн
1000+19.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G KBP210G SMC Diode Solutions KBP2005G%20THRU%20KBP210G%20N1746%20REV.A.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 21352 шт:
термін постачання 21-31 дні (днів)
8+44.20 грн
35+20.25 грн
105+16.46 грн
525+11.69 грн
1015+10.53 грн
2030+9.51 грн
5005+8.27 грн
10010+7.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
3.0SMCJ11A 3.0SMCJ11A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SM8S30A SM8S30A SMC Diode Solutions SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S30A SM8S30A SMC Diode Solutions SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FR104 FR104 SMC Diode Solutions FR101-FR107%20N0441%20REV.B.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S16LC36-8 S16LC36-8 SMC Diode Solutions S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
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S16LC36-8 S16LC36-8 SMC Diode Solutions S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
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ABS8 ABS8 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 800V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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ABS8 ABS8 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 800V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
19+18.01 грн
31+10.48 грн
100+6.52 грн
500+4.49 грн
1000+3.96 грн
Мінімальне замовлення: 19
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S5D25170H S5D25170H SMC Diode Solutions S5D25170H%20N2525%20REV.A.pdf Description: DIODE SCHOTTKY 1700V 66A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2252pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
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SMBJ440A SMBJ440A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 440VWM 713VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 492V
Voltage - Clamping (Max) @ Ipp: 713V
Power - Peak Pulse: 600W
Power Line Protection: No
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1N4745A 1N4745A SMC Diode Solutions 1N4728A-1N4764A%20N0183%20REV.C.pdf Description: DIODE ZENER 16V 1W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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1N4736A 1N4736A SMC Diode Solutions 1N4728A-1N4764A%20N0183%20REV.C.pdf Description: DIODE ZENER 6.8V 1W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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SM090KJ800G1 SM090KJ800G1 SMC Diode Solutions SM090KD800G1%20SM090KC800G1%20SM090KJ800G1%20SM090KE800G1%20N2205%20REV.E.pdf Description: DIODE MODULE GEN PURP 800V 100A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
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MBR2090CT MBR2080-100CT%20N0623%20REV.B.pdf
MBR2090CT
Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
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ER5E ER5(A-J)%20N0994%20REV.A.pdf
ER5E
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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S2M0016120D-1 S2M0016120D-1%20N2762%20REV.A.pdf
S2M0016120D-1
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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S2M0016120K-1 S2M0016120K-1%20N2705%20REV.A.pdf
S2M0016120K-1
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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30BQ015 30BQ015%20N0025%20REV.A.pdf
30BQ015
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.93 грн
6000+4.28 грн
9000+4.04 грн
15000+3.54 грн
21000+3.39 грн
30000+3.25 грн
Мінімальне замовлення: 3000
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 55441 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+22.92 грн
23+13.79 грн
100+8.65 грн
500+6.01 грн
1000+5.33 грн
Мінімальне замовлення: 15
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S3M0040120J S3M0040120J%20N2801%20REV.-.pdf
S3M0040120J
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120B S3M0016120B%20N2823%20REV.-.pdf
S3M0016120B
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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SICRB10650CT SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf
SICRB10650CT
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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SMBJ13A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ13A
Виробник: SMC Diode Solutions
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SK56 SK56%20N0940%20REV.A.pdf
SK56
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.77 грн
6000+9.47 грн
9000+9.02 грн
15000+7.98 грн
21000+7.70 грн
30000+7.42 грн
Мінімальне замовлення: 3000
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SK56 SK56%20N0940%20REV.A.pdf
SK56
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 32418 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.66 грн
12+27.82 грн
100+17.85 грн
500+12.70 грн
1000+11.39 грн
Мінімальне замовлення: 8
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ST6045C ST6045C%20N2583%20REV.-.pdf
ST6045C
Виробник: SMC Diode Solutions
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.47 грн
10000+3.02 грн
15000+2.85 грн
25000+2.50 грн
35000+2.39 грн
50000+2.29 грн
Мінімальне замовлення: 5000
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10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 93292 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.01 грн
30+10.80 грн
100+6.72 грн
500+4.64 грн
1000+4.09 грн
2000+3.64 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.94 грн
6000+4.29 грн
9000+4.05 грн
15000+3.55 грн
21000+3.40 грн
30000+3.25 грн
75000+2.89 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 117093 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.74 грн
23+13.79 грн
100+8.67 грн
500+6.02 грн
1000+5.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.94 грн
6000+4.29 грн
9000+4.05 грн
15000+3.55 грн
21000+3.40 грн
30000+3.25 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 51219 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.74 грн
23+13.79 грн
100+8.67 грн
500+6.02 грн
1000+5.34 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ100 description 10BQ100%20N0646%20REV.A.pdf
10BQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.09 грн
6000+4.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ100 description 10BQ100%20N0646%20REV.A.pdf
10BQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 9143 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.74 грн
23+14.27 грн
100+8.91 грн
500+6.20 грн
1000+5.49 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.00 грн
6000+6.11 грн
9000+5.79 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 11929 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.92 грн
17+18.92 грн
100+11.98 грн
500+8.41 грн
1000+7.49 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
3.0SMCJ5.0A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ5.0A
Виробник: SMC Diode Solutions
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120D S3M0040120D%20N2817%20REV.-.pdf
S3M0040120D
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0040120K S3M0040120K%20N2759%20REV.-.pdf
S3M0040120K
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0025120D S3M0025120D%20N2816%20REV.-.pdf
S3M0025120D
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
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S3M0025120K S3M0025120K%20N2774%20REV.-.pdf
S3M0025120K
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1038.72 грн
10+699.86 грн
100+529.97 грн
В кошику  од. на суму  грн.
S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
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S3M0040120N S3M0040120N%20N2800%20REV.-.pdf
S3M0040120N
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0016120N S3M0016120N%20N2799%20REV.-.pdf
S3M0016120N
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
товару немає в наявності
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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SD125SC150A.T1 SD125SC150A%20D0067%20REV.-.pdf
SD125SC150A.T1
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.72 грн
10+117.84 грн
25+100.42 грн
100+75.53 грн
300+64.64 грн
Мінімальне замовлення: 2
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8TQ100 description 8TQ080-100(S)%20N0639%20REV.A.pdf
8TQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+96.59 грн
Мінімальне замовлення: 4
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sm712 SM712%20N2270%20REV.A.pdf
sm712
Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 7VWM SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 162000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.12 грн
6000+3.56 грн
9000+3.36 грн
15000+2.93 грн
21000+2.80 грн
30000+2.68 грн
75000+2.37 грн
150000+2.20 грн
Мінімальне замовлення: 3000
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sm712 SM712%20N2270%20REV.A.pdf
sm712
Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 7VWM SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 163044 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.64 грн
27+11.74 грн
100+7.31 грн
500+5.05 грн
1000+4.47 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.36 грн
10000+2.91 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 21882 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.01 грн
31+10.48 грн
100+6.52 грн
500+4.49 грн
1000+3.96 грн
2000+3.52 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
UF4004 UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf
UF4004
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4005 UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf
UF4005
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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MBRF10200CT MBRF10200CT%20N0079%20REV.B.pdf
MBRF10200CT
Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+73.67 грн
50+32.82 грн
100+29.05 грн
500+21.05 грн
1000+19.04 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G KBP2005G%20THRU%20KBP210G%20N1746%20REV.A.pdf
KBP210G
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 21352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.20 грн
35+20.25 грн
105+16.46 грн
525+11.69 грн
1015+10.53 грн
2030+9.51 грн
5005+8.27 грн
10010+7.59 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
3.0SMCJ11A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ11A
Виробник: SMC Diode Solutions
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SM8S30A SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf
SM8S30A
Виробник: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM8S30A SM8S20A%20THRU%20SM8S43A%20N2148%20REV.-.pdf
SM8S30A
Виробник: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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FR104 FR101-FR107%20N0441%20REV.B.pdf
FR104
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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S16LC36-8 S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf
S16LC36-8
Виробник: SMC Diode Solutions
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
товару немає в наявності
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S16LC36-8 S16LC03-8%20THRU%20S16LC36-8%20N0288%20REV.B.pdf
S16LC36-8
Виробник: SMC Diode Solutions
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
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ABS8 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS8
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 800V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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ABS8 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS8
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 800V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+18.01 грн
31+10.48 грн
100+6.52 грн
500+4.49 грн
1000+3.96 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
S5D25170H S5D25170H%20N2525%20REV.A.pdf
S5D25170H
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 1700V 66A TO247AC
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2252pF @ 0V, 1MHz
Current - Average Rectified (Io): 66A
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
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SMBJ440A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ440A
Виробник: SMC Diode Solutions
Description: TVS DIODE 440VWM 713VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 900mA
Voltage - Reverse Standoff (Typ): 440V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 492V
Voltage - Clamping (Max) @ Ipp: 713V
Power - Peak Pulse: 600W
Power Line Protection: No
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1N4745A 1N4728A-1N4764A%20N0183%20REV.C.pdf
1N4745A
Виробник: SMC Diode Solutions
Description: DIODE ZENER 16V 1W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
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1N4736A 1N4728A-1N4764A%20N0183%20REV.C.pdf
1N4736A
Виробник: SMC Diode Solutions
Description: DIODE ZENER 6.8V 1W DO41
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 4 V
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SM090KJ800G1 SM090KD800G1%20SM090KC800G1%20SM090KJ800G1%20SM090KE800G1%20N2205%20REV.E.pdf
SM090KJ800G1
Виробник: SMC Diode Solutions
Description: DIODE MODULE GEN PURP 800V 100A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 100 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
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