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GBU801 GBU801 SMC Diode Solutions GBU8005-GBU810%20N1809%20REV.A.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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GBU804 GBU804 SMC Diode Solutions GBU8005-GBU810%20N1809%20REV.A.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5400 1N5400 SMC Diode Solutions 1N5400-1N5408%20N0547%20REV.A.pdf Description: DIODE STANDARD 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N5257B 1N5257B SMC Diode Solutions 1N5221B-1N5281B%20N0184%20REV.D.pdf Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
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SK54B SK54B SMC Diode Solutions SK54B%20N0105%20REV.B.pdf Description: DIODE SCHOTTKY 40V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
3000+6.30 грн
6000+5.51 грн
9000+5.23 грн
15000+4.61 грн
21000+4.58 грн
Мінімальне замовлення: 3000
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SK54B SK54B SMC Diode Solutions SK54B%20N0105%20REV.B.pdf Description: DIODE SCHOTTKY 40V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 165580 шт:
термін постачання 21-31 дні (днів)
10+33.38 грн
16+19.88 грн
100+12.61 грн
500+8.88 грн
1000+7.92 грн
Мінімальне замовлення: 10
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5.0SMCJ45CA 5.0SMCJ45CA SMC Diode Solutions 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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5.0SMCJ45CA 5.0SMCJ45CA SMC Diode Solutions 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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MBR2090CT MBR2090CT SMC Diode Solutions MBR2080-100CT%20N0623%20REV.B.pdf Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
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ER5E ER5E SMC Diode Solutions ER5(A-J)%20N0994%20REV.A.pdf Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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S2M0016120D-1 S2M0016120D-1 SMC Diode Solutions S2M0016120D-1%20N2762%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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S2M0016120K-1 S2M0016120K-1 SMC Diode Solutions S2M0016120K-1%20N2705%20REV.A.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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30BQ015 30BQ015 SMC Diode Solutions 30BQ015%20N0025%20REV.A.pdf Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
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10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
3000+4.79 грн
6000+4.16 грн
9000+3.93 грн
15000+3.44 грн
21000+3.30 грн
30000+3.16 грн
75000+2.80 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ060 10BQ060 SMC Diode Solutions 10BQ060%20N0645%20REV.A.pdf description Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 81139 шт:
термін постачання 21-31 дні (днів)
14+22.51 грн
23+13.38 грн
100+8.40 грн
500+5.84 грн
1000+5.18 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
S3M0040120J S3M0040120J SMC Diode Solutions S3M0040120J%20N2801%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120B S3M0016120B SMC Diode Solutions S3M0016120B%20N2823%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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SICRB10650CT SICRB10650CT SMC Diode Solutions SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
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SMBJ13A SMBJ13A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
3000+10.90 грн
6000+9.59 грн
9000+9.13 грн
15000+8.09 грн
21000+7.80 грн
30000+7.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SK56 SK56 SMC Diode Solutions SK56%20N0940%20REV.A.pdf Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 35735 шт:
термін постачання 21-31 дні (днів)
7+47.35 грн
11+28.18 грн
100+18.08 грн
500+12.86 грн
1000+11.54 грн
Мінімальне замовлення: 7
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ST6045C ST6045C SMC Diode Solutions ST6045C%20N2583%20REV.-.pdf Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
5000+3.35 грн
10000+2.91 грн
15000+2.75 грн
25000+2.41 грн
35000+2.31 грн
50000+2.21 грн
125000+1.96 грн
Мінімальне замовлення: 5000
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10MQ040N 10MQ040N SMC Diode Solutions 10MQ040N%20N0231%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 135467 шт:
термін постачання 21-31 дні (днів)
18+17.85 грн
29+10.46 грн
100+6.50 грн
500+4.48 грн
1000+3.95 грн
2000+3.51 грн
Мінімальне замовлення: 18
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10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
3000+5.01 грн
6000+4.34 грн
9000+4.10 грн
15000+3.59 грн
21000+3.44 грн
30000+3.30 грн
75000+2.92 грн
Мінімальне замовлення: 3000
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10BQ030 10BQ030 SMC Diode Solutions 10BQ030%20N0643%20REV.A.pdf description Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 131240 шт:
термін постачання 21-31 дні (днів)
14+23.29 грн
22+13.98 грн
100+8.78 грн
500+6.10 грн
1000+5.41 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
3000+4.77 грн
6000+4.14 грн
9000+3.91 грн
15000+3.43 грн
21000+3.28 грн
30000+3.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ040 10BQ040 SMC Diode Solutions 10BQ040%20N0644%20REV.A.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 52419 шт:
термін постачання 21-31 дні (днів)
14+22.51 грн
23+13.31 грн
100+8.37 грн
500+5.81 грн
1000+5.15 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ100 10BQ100 SMC Diode Solutions 10BQ100%20N0646%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
3000+4.91 грн
6000+4.27 грн
9000+4.03 грн
15000+3.53 грн
21000+3.39 грн
30000+3.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ100 10BQ100 SMC Diode Solutions 10BQ100%20N0646%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 37694 шт:
термін постачання 21-31 дні (днів)
14+23.29 грн
22+13.75 грн
100+8.60 грн
500+5.98 грн
1000+5.30 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ20CA SMAJ20CA SMC Diode Solutions SMAJ%20SERIES%20N0223%20REV.B.pdf Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+6.76 грн
6000+5.90 грн
9000+5.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMBJ300A SMBJ300A SMC Diode Solutions SMBJ%20SERIES%20N0193%20REV.D.pdf Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
10+31.05 грн
17+18.24 грн
100+11.56 грн
500+8.12 грн
1000+7.23 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
3.0SMCJ5.0A 3.0SMCJ5.0A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120D S3M0040120D SMC Diode Solutions S3M0040120D%20N2817%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120K S3M0040120K SMC Diode Solutions S3M0040120K%20N2759%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0025120D S3M0025120D SMC Diode Solutions S3M0025120D%20N2816%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0025120K S3M0025120K SMC Diode Solutions S3M0025120K%20N2774%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120T SMC Diode Solutions S3M0040120T%20N2848%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
1+985.06 грн
10+663.71 грн
100+502.59 грн
В кошику  од. на суму  грн.
S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0025120T SMC Diode Solutions S3M0025120T%20N2849%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0040120N S3M0040120N SMC Diode Solutions S3M0040120N%20N2800%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
S3M0016120N S3M0016120N SMC Diode Solutions S3M0016120N%20N2799%20REV.-.pdf Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
ABF6U ABF6U SMC Diode Solutions ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
SD125SC150A.T1 SD125SC150A.T1 SMC Diode Solutions SD125SC150A%20D0067%20REV.-.pdf Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
2+180.87 грн
10+111.75 грн
25+95.23 грн
100+71.63 грн
300+61.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
8TQ100 8TQ100 SMC Diode Solutions 8TQ080-100(S)%20N0639%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
4+91.60 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
sm712 sm712 SMC Diode Solutions SM712%20N2270%20REV.A.pdf Description: TVS DIODE 12VWM 7VWM SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
3000+3.97 грн
6000+3.44 грн
9000+3.24 грн
15000+2.83 грн
21000+2.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
sm712 sm712 SMC Diode Solutions SM712%20N2270%20REV.A.pdf Description: TVS DIODE 12VWM 7VWM SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 26288 шт:
термін постачання 21-31 дні (днів)
16+19.41 грн
27+11.29 грн
100+7.06 грн
500+4.88 грн
1000+4.31 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+3.24 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ABS6 ABS6 SMC Diode Solutions ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
19+17.08 грн
30+10.09 грн
100+6.29 грн
500+4.34 грн
1000+3.83 грн
2000+3.40 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
UF4004 UF4004 SMC Diode Solutions UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4004 UF4004 SMC Diode Solutions UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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UF4005 UF4005 SMC Diode Solutions UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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MBRF10200CT MBRF10200CT SMC Diode Solutions MBRF10200CT%20N0079%20REV.B.pdf Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 5952 шт:
термін постачання 21-31 дні (днів)
5+74.52 грн
50+33.23 грн
100+29.42 грн
500+21.32 грн
1000+19.29 грн
2000+17.58 грн
5000+15.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G KBP210G SMC Diode Solutions KBP2005G%20THRU%20KBP210G%20N1746%20REV.A.pdf Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 16520 шт:
термін постачання 21-31 дні (днів)
8+42.69 грн
35+19.54 грн
105+15.89 грн
525+11.29 грн
1015+10.17 грн
2030+9.18 грн
5005+7.98 грн
10010+7.32 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
SMCJ11A SMCJ11A SMC Diode Solutions SMCJ%20SERIES%20N0002%20REV.C.pdf description Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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3.0SMCJ11A 3.0SMCJ11A SMC Diode Solutions 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
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SM8S30A SM8S30A SMC Diode Solutions SM8T20A%20THRU%20SM8T43A%20N2146%20REV.-.pdf Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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GBU801 GBU8005-GBU810%20N1809%20REV.A.pdf
GBU801
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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GBU804 GBU8005-GBU810%20N1809%20REV.A.pdf
GBU804
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5400 1N5400-1N5408%20N0547%20REV.A.pdf
1N5400
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 50V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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1N5257B 1N5221B-1N5281B%20N0184%20REV.D.pdf
1N5257B
Виробник: SMC Diode Solutions
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
товару немає в наявності
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SK54B SK54B%20N0105%20REV.B.pdf
SK54B
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 165000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.30 грн
6000+5.51 грн
9000+5.23 грн
15000+4.61 грн
21000+4.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SK54B SK54B%20N0105%20REV.B.pdf
SK54B
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 165580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.38 грн
16+19.88 грн
100+12.61 грн
500+8.88 грн
1000+7.92 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
5.0SMCJ45CA 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf
5.0SMCJ45CA
Виробник: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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5.0SMCJ45CA 5.0SMCJ%20SERIES%20N0240%20REV.C.pdf
5.0SMCJ45CA
Виробник: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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MBR2090CT MBR2080-100CT%20N0623%20REV.B.pdf
MBR2090CT
Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
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ER5E ER5(A-J)%20N0994%20REV.A.pdf
ER5E
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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S2M0016120D-1 S2M0016120D-1%20N2762%20REV.A.pdf
S2M0016120D-1
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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S2M0016120K-1 S2M0016120K-1%20N2705%20REV.A.pdf
S2M0016120K-1
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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30BQ015 30BQ015%20N0025%20REV.A.pdf
30BQ015
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 78000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.79 грн
6000+4.16 грн
9000+3.93 грн
15000+3.44 грн
21000+3.30 грн
30000+3.16 грн
75000+2.80 грн
Мінімальне замовлення: 3000
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10BQ060 description 10BQ060%20N0645%20REV.A.pdf
10BQ060
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 81139 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.51 грн
23+13.38 грн
100+8.40 грн
500+5.84 грн
1000+5.18 грн
Мінімальне замовлення: 14
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S3M0040120J S3M0040120J%20N2801%20REV.-.pdf
S3M0040120J
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120B S3M0016120B%20N2823%20REV.-.pdf
S3M0016120B
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
товару немає в наявності
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SICRB10650CT SICR10650CT%20%20SICRB10650CT%20%20SICRD10650CT%20%20SICRF10650CT%20N1871%20Draft%201.pdf
SICRB10650CT
Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
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SMBJ13A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ13A
Виробник: SMC Diode Solutions
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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SK56 SK56%20N0940%20REV.A.pdf
SK56
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 33000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.90 грн
6000+9.59 грн
9000+9.13 грн
15000+8.09 грн
21000+7.80 грн
30000+7.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SK56 SK56%20N0940%20REV.A.pdf
SK56
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 35735 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.35 грн
11+28.18 грн
100+18.08 грн
500+12.86 грн
1000+11.54 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
ST6045C ST6045C%20N2583%20REV.-.pdf
ST6045C
Виробник: SMC Diode Solutions
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
товару немає в наявності
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10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 130000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.35 грн
10000+2.91 грн
15000+2.75 грн
25000+2.41 грн
35000+2.31 грн
50000+2.21 грн
125000+1.96 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
10MQ040N description 10MQ040N%20N0231%20REV.A.pdf
10MQ040N
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 135467 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+17.85 грн
29+10.46 грн
100+6.50 грн
500+4.48 грн
1000+3.95 грн
2000+3.51 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 129000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.01 грн
6000+4.34 грн
9000+4.10 грн
15000+3.59 грн
21000+3.44 грн
30000+3.30 грн
75000+2.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ030 description 10BQ030%20N0643%20REV.A.pdf
10BQ030
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 131240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.29 грн
22+13.98 грн
100+8.78 грн
500+6.10 грн
1000+5.41 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 51000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.77 грн
6000+4.14 грн
9000+3.91 грн
15000+3.43 грн
21000+3.28 грн
30000+3.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ040 description 10BQ040%20N0644%20REV.A.pdf
10BQ040
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 52419 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.51 грн
23+13.31 грн
100+8.37 грн
500+5.81 грн
1000+5.15 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
10BQ100 description 10BQ100%20N0646%20REV.A.pdf
10BQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 36000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.91 грн
6000+4.27 грн
9000+4.03 грн
15000+3.53 грн
21000+3.39 грн
30000+3.24 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
10BQ100 description 10BQ100%20N0646%20REV.A.pdf
10BQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 26pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
на замовлення 37694 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.29 грн
22+13.75 грн
100+8.60 грн
500+5.98 грн
1000+5.30 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAJ20CA SMAJ%20SERIES%20N0223%20REV.B.pdf
SMAJ20CA
Виробник: SMC Diode Solutions
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
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SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+6.76 грн
6000+5.90 грн
9000+5.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMBJ300A SMBJ%20SERIES%20N0193%20REV.D.pdf
SMBJ300A
Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.05 грн
17+18.24 грн
100+11.56 грн
500+8.12 грн
1000+7.23 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
3.0SMCJ5.0A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ5.0A
Виробник: SMC Diode Solutions
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
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S3M0040120D S3M0040120D%20N2817%20REV.-.pdf
S3M0040120D
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0040120K S3M0040120K%20N2759%20REV.-.pdf
S3M0040120K
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0025120D S3M0025120D%20N2816%20REV.-.pdf
S3M0025120D
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
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S3M0025120K S3M0025120K%20N2774%20REV.-.pdf
S3M0025120K
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
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S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
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S3M0040120T S3M0040120T%20N2848%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+985.06 грн
10+663.71 грн
100+502.59 грн
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S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0025120T S3M0025120T%20N2849%20REV.-.pdf
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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S3M0040120N S3M0040120N%20N2800%20REV.-.pdf
S3M0040120N
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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S3M0016120N S3M0016120N%20N2799%20REV.-.pdf
S3M0016120N
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ABF6U ABF2U%20THRU%20ABF10U%20N1827%20REV.A.pdf
ABF6U
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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SD125SC150A.T1 SD125SC150A%20D0067%20REV.-.pdf
SD125SC150A.T1
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.87 грн
10+111.75 грн
25+95.23 грн
100+71.63 грн
300+61.30 грн
Мінімальне замовлення: 2
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8TQ100 description 8TQ080-100(S)%20N0639%20REV.A.pdf
8TQ100
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.60 грн
Мінімальне замовлення: 4
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sm712 SM712%20N2270%20REV.A.pdf
sm712
Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 7VWM SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.97 грн
6000+3.44 грн
9000+3.24 грн
15000+2.83 грн
21000+2.71 грн
Мінімальне замовлення: 3000
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sm712 SM712%20N2270%20REV.A.pdf
sm712
Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 7VWM SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 75pF @ 1MHz
Current - Peak Pulse (10/1000µs): 17A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max), 7V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 2
Voltage - Breakdown (Min): 13.3V, 7.5V
Voltage - Clamping (Max) @ Ipp: 26V, 12V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 26288 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+19.41 грн
27+11.29 грн
100+7.06 грн
500+4.88 грн
1000+4.31 грн
Мінімальне замовлення: 16
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ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+3.24 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
ABS6 ABS2%20THRU%20ABS10%20N1693%20REV.A.pdf
ABS6
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 9615 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.08 грн
30+10.09 грн
100+6.29 грн
500+4.34 грн
1000+3.83 грн
2000+3.40 грн
Мінімальне замовлення: 19
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UF4004 UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf
UF4004
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4004 UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf
UF4004
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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UF4005 UF4001%20THRU%20UF4007%20N0115%20REV.C.pdf
UF4005
Виробник: SMC Diode Solutions
Description: DIODE STANDARD 600V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MBRF10200CT MBRF10200CT%20N0079%20REV.B.pdf
MBRF10200CT
Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 5952 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+74.52 грн
50+33.23 грн
100+29.42 грн
500+21.32 грн
1000+19.29 грн
2000+17.58 грн
5000+15.48 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
KBP210G KBP2005G%20THRU%20KBP210G%20N1746%20REV.A.pdf
KBP210G
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 1KV 2A KBP
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 16520 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.69 грн
35+19.54 грн
105+15.89 грн
525+11.29 грн
1015+10.17 грн
2030+9.18 грн
5005+7.98 грн
10010+7.32 грн
Мінімальне замовлення: 8
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SMCJ11A description SMCJ%20SERIES%20N0002%20REV.C.pdf
SMCJ11A
Виробник: SMC Diode Solutions
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 82.4A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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3.0SMCJ11A 3.0SMCJ%20SERIES%20N0001%20REV.B.pdf
3.0SMCJ11A
Виробник: SMC Diode Solutions
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SM8S30A SM8T20A%20THRU%20SM8T43A%20N2146%20REV.-.pdf
SM8S30A
Виробник: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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