Продукція > SMC DIODE SOLUTIONS > Всі товари виробника SMC DIODE SOLUTIONS (7742) > Сторінка 87 з 130
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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UG6KB20 | SMC Diode Solutions |
Description: BRIDGE RECT 1PHASE 200V 6A D3KPackaging: Tube Package / Case: 4-ESIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: D3K Voltage - Peak Reverse (Max): 200 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||
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SK36 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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SK36 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -65°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
на замовлення 15157 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ7.0A | SMC Diode Solutions |
Description: TVS DIODE 7VWM 12VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 250A Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.78V Voltage - Clamping (Max) @ Ipp: 12V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||
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3.0SMCJ9.0CA | SMC Diode Solutions |
Description: TVS DIODE 9VWM 15.4VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 194.8A Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 15.4V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||
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S2M0025120D | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tj) Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 4V @ 15mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S2312 | SMC Diode Solutions |
Description: TVS DIODE 12VWM 19VC SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 160pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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S2312 | SMC Diode Solutions |
Description: TVS DIODE 12VWM 19VC SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 160pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 12V (Max) Supplier Device Package: SOT-23-3 Bidirectional Channels: 1 Voltage - Breakdown (Min): 13.3V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 300W Power Line Protection: No |
на замовлення 32330 шт: термін постачання 21-31 дні (днів) |
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P6KE8.2A | SMC Diode Solutions |
Description: TVS DIODE 7.02VWM 12.1VC DO15Packaging: Tape & Box (TB) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 50A Voltage - Reverse Standoff (Typ): 7.02V Supplier Device Package: DO-15 Unidirectional Channels: 1 Voltage - Breakdown (Min): 7.79V Voltage - Clamping (Max) @ Ipp: 12.1V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||
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20CTQ040S | SMC Diode Solutions |
Description: DIODE ARRAY SCHOTT 40V 10A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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20CTQ040S | SMC Diode Solutions |
Description: DIODE ARRAY SCHOTT 40V 10A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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GBU801 | SMC Diode Solutions |
Description: BRIDGE RECT 1PHASE 100V 8A GBUPackaging: Tube Package / Case: 4-ESIP Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 100 V Current - Average Rectified (Io): 8 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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1N5257B | SMC Diode Solutions |
Description: DIODE ZENER 33V 500MW DO35Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 200°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 58 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 24 V |
товару немає в наявності |
Мінімальне замовлення: 100000 шт В кошику од. на суму грн. | ||||||||||
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5.0SMCJ45CA | SMC Diode Solutions |
Description: TVS DIODE 45VWM 72.7VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68.8A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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5.0SMCJ45CA | SMC Diode Solutions |
Description: TVS DIODE 45VWM 72.7VC DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 68.8A Voltage - Reverse Standoff (Typ): 45V Supplier Device Package: DO-214AB (SMC) Bidirectional Channels: 1 Voltage - Breakdown (Min): 50V Voltage - Clamping (Max) @ Ipp: 72.7V Power - Peak Pulse: 5000W (5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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MBR2090CT | SMC Diode Solutions |
Description: DIODE ARRAY SCHOTTKY 90V TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 90 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A Current - Reverse Leakage @ Vr: 1 mA @ 90 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ER5E | SMC Diode Solutions |
Description: DIODE STANDARD 300V 5A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 58pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 300 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 300 V |
товару немає в наявності |
Мінімальне замовлення: 48000 шт В кошику од. на суму грн. | ||||||||||
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S2M0016120D-1 | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S2M0016120K-1 | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 23mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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30BQ015 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 15V 3A DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 1120pF @ 5V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 15 V Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A Current - Reverse Leakage @ Vr: 4 mA @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 30000 шт В кошику од. на суму грн. | ||||||||||
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10BQ060 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 62pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 60000 шт: термін постачання 21-31 дні (днів) |
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10BQ060 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 62pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 63219 шт: термін постачання 21-31 дні (днів) |
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S3M0040120J | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0016120B | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 576W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SICRB10650CT | SMC Diode Solutions |
Description: DIODE SIL CARBIDE 650V 5A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Current - Average Rectified (Io): 5A Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||
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SMBJ13A | SMC Diode Solutions |
Description: TVS DIODE 13VWM 21.5VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 27.9A Voltage - Reverse Standoff (Typ): 13V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 14.4V Voltage - Clamping (Max) @ Ipp: 21.5V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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SK56 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 5V, 1MHz Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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SK56 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 60V DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 5V, 1MHz Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A Current - Reverse Leakage @ Vr: 1 mA @ 60 V |
на замовлення 31331 шт: термін постачання 21-31 дні (днів) |
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ST6045C | SMC Diode Solutions |
Description: DIODE ARR SCHOTT 45V 30A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A Current - Reverse Leakage @ Vr: 3 mA @ 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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10MQ040N | SMC Diode Solutions |
Description: DIODE SCHOTTKY 40V 1A DO214ACPackaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 45pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 80000 шт: термін постачання 21-31 дні (днів) |
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10MQ040N | SMC Diode Solutions |
Description: DIODE SCHOTTKY 40V 1A DO214ACPackaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 45pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
на замовлення 84829 шт: термін постачання 21-31 дні (днів) |
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10BQ030 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 30V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
на замовлення 96000 шт: термін постачання 21-31 дні (днів) |
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10BQ030 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 30V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A Current - Reverse Leakage @ Vr: 1 mA @ 30 V |
на замовлення 97549 шт: термін постачання 21-31 дні (днів) |
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10BQ040 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 40V 1A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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10BQ040 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 40V 1A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 5V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Current - Reverse Leakage @ Vr: 1 mA @ 40 V |
на замовлення 52945 шт: термін постачання 21-31 дні (днів) |
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SMBJ300A | SMC Diode Solutions |
Description: TVS DIODE 300VWM 486VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.3A Voltage - Reverse Standoff (Typ): 300V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 335V Voltage - Clamping (Max) @ Ipp: 486V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SMBJ300A | SMC Diode Solutions |
Description: TVS DIODE 300VWM 486VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.3A Voltage - Reverse Standoff (Typ): 300V Supplier Device Package: DO-214AA (SMB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 335V Voltage - Clamping (Max) @ Ipp: 486V Power - Peak Pulse: 600W Power Line Protection: No |
на замовлення 11849 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ5.0A | SMC Diode Solutions |
Description: TVS DIODE 5VWM 9.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 326.1A Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 9.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||
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S3M0040120D | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0040120K | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0025120D | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0025120K | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| S3M0040120T | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | |||||||||||
| S3M0040120T | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
на замовлення 250 шт: термін постачання 21-31 дні (днів) |
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S3M0025120T | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||
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S3M0025120T | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 4V @ 20mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0040120N | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 483W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S3M0016120N | SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200VPackaging: Bulk Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V Power Dissipation (Max): 732W (Tc) Vgs(th) (Max) @ Id: 4V @ 30mA Supplier Device Package: SOT-227 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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ABF6U | SMC Diode Solutions |
Description: BRIDGE RECT 1PHASE 600V 1A ABFPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABF Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | ||||||||||
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ABF6U | SMC Diode Solutions |
Description: BRIDGE RECT 1PHASE 600V 1A ABFPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABF Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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SD125SC150A.T1 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 150V 15A DIEPackaging: Tray Package / Case: Die Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 500pF @ 5V, 1MHz Current - Average Rectified (Io): 15A Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 200°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A Current - Reverse Leakage @ Vr: 500 µA @ 150 V |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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8TQ100 | SMC Diode Solutions |
Description: DIODE SCHOTTKY 100V 8A TO220ACPackaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 400pF @ 5V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 218 шт: термін постачання 21-31 дні (днів) |
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ABS6 | SMC Diode Solutions |
Description: BRIDGE RECT 1P 600V 500MA ABSPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ABS6 | SMC Diode Solutions |
Description: BRIDGE RECT 1P 600V 500MA ABSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: ABS Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 500 mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 19939 шт: термін постачання 21-31 дні (днів) |
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MBRF10200CT | SMC Diode Solutions |
Description: DIODE ARRAY SCHOTT 200V ITO220ABPackaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A Current - Reverse Leakage @ Vr: 1 mA @ 200 V |
на замовлення 1852 шт: термін постачання 21-31 дні (днів) |
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3.0SMCJ11A | SMC Diode Solutions |
Description: TVS DIODE 11VWM 18.2VC DO214ABPackaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 184.8A Voltage - Reverse Standoff (Typ): 11V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 12.2V Voltage - Clamping (Max) @ Ipp: 18.2V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No |
товару немає в наявності |
Мінімальне замовлення: 42000 шт В кошику од. на суму грн. | ||||||||||
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SM8S30A | SMC Diode Solutions |
Description: TVS DIODE 30VWM 48.4VC DO218ABPackaging: Tape & Reel (TR) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 136A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||
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SM8S30A | SMC Diode Solutions |
Description: TVS DIODE 30VWM 48.4VC DO218ABPackaging: Cut Tape (CT) Package / Case: DO-218AB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 136A Voltage - Reverse Standoff (Typ): 30V Supplier Device Package: DO-218AB Unidirectional Channels: 1 Voltage - Breakdown (Min): 33.3V Voltage - Clamping (Max) @ Ipp: 48.4V Power - Peak Pulse: 6600W (6.6kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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FR104 | SMC Diode Solutions |
Description: DIODE STANDARD 400V 1A DO41Packaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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S16LC36-8 | SMC Diode Solutions |
Description: TVS DIODE 36VWM 51VC 16SOPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: Ethernet, Telecom Capacitance @ Frequency: 25pF @ 1MHz Current - Peak Pulse (10/1000µs): 1A Voltage - Reverse Standoff (Typ): 36V (Max) Supplier Device Package: 16-SO Unidirectional Channels: 8 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 51V Power - Peak Pulse: 300W Power Line Protection: Yes |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| UG6KB20 |
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Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 200V 6A D3K
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D3K
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: BRIDGE RECT 1PHASE 200V 6A D3K
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: D3K
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
од. на суму грн.
| SK36 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.95 грн |
| 9000+ | 8.32 грн |
| SK36 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE SCHOTTKY 60V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
на замовлення 15157 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 43.97 грн |
| 12+ | 26.00 грн |
| 50+ | 18.91 грн |
| 100+ | 15.59 грн |
| 500+ | 11.79 грн |
| 3.0SMCJ7.0A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 7VWM 12VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 250A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 42000 шт
В кошику
од. на суму грн.
| 3.0SMCJ9.0CA |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 194.8A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 9VWM 15.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 194.8A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 42000 шт
В кошику
од. на суму грн.
| S2M0025120D |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tj)
Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4V @ 15mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4402 pF @ 1000 V
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| S2312 |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 19VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.02 грн |
| 9000+ | 4.96 грн |
| S2312 |
![]() |
Виробник: SMC Diode Solutions
Description: TVS DIODE 12VWM 19VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 12VWM 19VC SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 160pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 32330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 27.77 грн |
| 18+ | 16.56 грн |
| 50+ | 11.94 грн |
| 100+ | 9.79 грн |
| 500+ | 7.28 грн |
| P6KE8.2A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 7.02VWM 12.1VC DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 7.02VWM 12.1VC DO15
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 50A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| 20CTQ040S |
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Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 40V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| 20CTQ040S |
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Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 40V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE ARRAY SCHOTT 40V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
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| GBU801 |
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Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| 1N5257B |
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Виробник: SMC Diode Solutions
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
Description: DIODE ZENER 33V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 200°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
товару немає в наявності
Мінімальне замовлення: 100000 шт
В кошику
од. на суму грн.
| 5.0SMCJ45CA |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| 5.0SMCJ45CA |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Description: TVS DIODE 45VWM 72.7VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 68.8A
Voltage - Reverse Standoff (Typ): 45V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 50V
Voltage - Clamping (Max) @ Ipp: 72.7V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| MBR2090CT |
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Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
Description: DIODE ARRAY SCHOTTKY 90V TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 90 V
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| ER5E |
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Виробник: SMC Diode Solutions
Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Description: DIODE STANDARD 300V 5A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 58pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
товару немає в наявності
Мінімальне замовлення: 48000 шт
В кошику
од. на суму грн.
| S2M0016120D-1 |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
товару немає в наявності
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од. на суму грн.
| S2M0016120K-1 |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 23mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4540 pF @ 1000 V
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од. на суму грн.
| 30BQ015 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
Description: DIODE SCHOTTKY 15V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1120pF @ 5V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 350 mV @ 3 A
Current - Reverse Leakage @ Vr: 4 mA @ 15 V
товару немає в наявності
Мінімальне замовлення: 30000 шт
В кошику
од. на суму грн.
| 10BQ060 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 60000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.01 грн |
| 9000+ | 4.11 грн |
| 10BQ060 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 63219 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.91 грн |
| 22+ | 14.04 грн |
| 50+ | 10.07 грн |
| 100+ | 8.24 грн |
| 500+ | 6.10 грн |
| S3M0040120J |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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| S3M0016120B |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 576W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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| SICRB10650CT |
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Виробник: SMC Diode Solutions
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Description: DIODE SIL CARBIDE 650V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
товару немає в наявності
Мінімальне замовлення: 800 шт
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| SMBJ13A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 13VWM 21.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 27.9A
Voltage - Reverse Standoff (Typ): 13V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.4V
Voltage - Clamping (Max) @ Ipp: 21.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 3000 шт
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од. на суму грн.
| SK56 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 11.09 грн |
| 9000+ | 9.29 грн |
| SK56 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
Description: DIODE SCHOTTKY 60V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 60 V
на замовлення 31331 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 47.82 грн |
| 11+ | 28.67 грн |
| 50+ | 20.92 грн |
| 100+ | 17.26 грн |
| 500+ | 13.08 грн |
| ST6045C |
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Виробник: SMC Diode Solutions
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 3 mA @ 45 V
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| 10MQ040N |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 80000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.50 грн |
| 15000+ | 2.87 грн |
| 10MQ040N |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
на замовлення 84829 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 18.51 грн |
| 28+ | 10.84 грн |
| 50+ | 7.80 грн |
| 100+ | 6.36 грн |
| 500+ | 4.68 грн |
| 10BQ030 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.11 грн |
| 9000+ | 4.19 грн |
| 10BQ030 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
Description: DIODE SCHOTTKY 30V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 420 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 30 V
на замовлення 97549 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 24.68 грн |
| 21+ | 14.34 грн |
| 50+ | 10.29 грн |
| 100+ | 8.42 грн |
| 500+ | 6.23 грн |
| 10BQ040 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 5.09 грн |
| 9000+ | 4.17 грн |
| 10BQ040 |
![]() |
Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 5V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
на замовлення 52945 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 23.91 грн |
| 21+ | 14.26 грн |
| 50+ | 10.25 грн |
| 100+ | 8.39 грн |
| 500+ | 6.21 грн |
| SMBJ300A |
![]() |
Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.01 грн |
| 6000+ | 6.12 грн |
| 9000+ | 5.80 грн |
| SMBJ300A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 300VWM 486VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.3A
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 335V
Voltage - Clamping (Max) @ Ipp: 486V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 11849 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.40 грн |
| 16+ | 19.01 грн |
| 100+ | 12.00 грн |
| 500+ | 8.42 грн |
| 1000+ | 7.50 грн |
| 3.0SMCJ5.0A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326.1A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 326.1A
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 9.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 42000 шт
В кошику
од. на суму грн.
| S3M0040120D |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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| S3M0040120K |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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| S3M0025120D |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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| S3M0025120K |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
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| S3M0040120T |
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Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
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| S3M0040120T |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 978.81 грн |
| 10+ | 659.49 грн |
| 100+ | 499.40 грн |
| S3M0025120T |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| S3M0025120T |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 48A, 18V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3519 pF @ 1000 V
товару немає в наявності
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| S3M0040120N |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V
Power Dissipation (Max): 483W (Tc)
Vgs(th) (Max) @ Id: 4V @ 16mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V
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| S3M0016120N |
![]() |
Виробник: SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
Description: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 75A, 18V
Power Dissipation (Max): 732W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 287 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 1000 V
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| ABF6U |
![]() |
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
Мінімальне замовлення: 10000 шт
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| ABF6U |
![]() |
Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 1A ABF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABF
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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| SD125SC150A.T1 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
Description: DIODE SCHOTTKY 150V 15A DIE
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 150 V
на замовлення 488 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 179.72 грн |
| 10+ | 111.04 грн |
| 25+ | 94.63 грн |
| 100+ | 71.18 грн |
| 300+ | 60.91 грн |
| 8TQ100 |
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Виробник: SMC Diode Solutions
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 5V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 8 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.64 грн |
| 10+ | 57.93 грн |
| 50+ | 43.09 грн |
| 100+ | 35.96 грн |
| ABS6 |
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Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 3.39 грн |
| 15000+ | 2.78 грн |
| ABS6 |
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Виробник: SMC Diode Solutions
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1P 600V 500MA ABS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: ABS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 19939 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 17.74 грн |
| 29+ | 10.55 грн |
| 50+ | 7.56 грн |
| 100+ | 6.17 грн |
| 500+ | 4.53 грн |
| MBRF10200CT |
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Виробник: SMC Diode Solutions
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Description: DIODE ARRAY SCHOTT 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 5 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
на замовлення 1852 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 74.82 грн |
| 10+ | 44.86 грн |
| 50+ | 33.10 грн |
| 100+ | 27.50 грн |
| 500+ | 21.23 грн |
| 3.0SMCJ11A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Description: TVS DIODE 11VWM 18.2VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 184.8A
Voltage - Reverse Standoff (Typ): 11V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 12.2V
Voltage - Clamping (Max) @ Ipp: 18.2V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
товару немає в наявності
Мінімальне замовлення: 42000 шт
В кошику
од. на суму грн.
| SM8S30A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| SM8S30A |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 136A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| FR104 |
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Виробник: SMC Diode Solutions
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| S16LC36-8 |
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Виробник: SMC Diode Solutions
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
Description: TVS DIODE 36VWM 51VC 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Ethernet, Telecom
Capacitance @ Frequency: 25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 36V (Max)
Supplier Device Package: 16-SO
Unidirectional Channels: 8
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 51V
Power - Peak Pulse: 300W
Power Line Protection: Yes
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.





























