Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170408) > Сторінка 295 з 2841
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STM3220G-EVAL | STMicroelectronics |
 Description: STM32 F2 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32 F2 Part Status: Obsolete |
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STM3221G-EVAL | STMicroelectronics |
Description: STM32 F2 EVAL BRD Packaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s), LCD Core Processor: ARM® Cortex®-M3 Board Type: Evaluation Platform Utilized IC / Part: STM32 F2 Part Status: Obsolete |
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STL160N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 160A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V |
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STL23NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 19.5A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V |
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STL24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STL35N15F3 | STMicroelectronics |
Description: MOSFET N-CH 150V 33A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V |
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STPSC1006G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 650pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 600 V |
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STPSC806G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 450pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D²PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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STL24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 16A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V Power Dissipation (Max): 3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
на замовлення 6957 шт: термін постачання 21-31 дні (днів) |
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STL23NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 19.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V |
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STL160N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 160A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V |
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STPSC1006G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 650pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 600 V |
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STPSC806G-TR | STMicroelectronics |
Description: DIODE SIL CARBIDE 600V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 450pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: D²PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
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STN3N40K3 | STMicroelectronics |
Description: MOSFET N-CH 400V 1.8A SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V |
на замовлення 52000 шт: термін постачання 21-31 дні (днів) |
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STTH1002CGY-TR | STMicroelectronics |
Description: DIODE ARRAY GP 200V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
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ESDAXLC4-1BF3 | STMicroelectronics |
Description: TVS DIODE 3VWM 10VC 2FLIPCHIP Packaging: Tape & Reel (TR) Package / Case: 2-XFBGA, FCBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz Current - Peak Pulse (10/1000µs): 1A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 2-FlipChip Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 10V Power - Peak Pulse: 55W Power Line Protection: No |
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STB24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
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STB6N52K3 | STMicroelectronics |
Description: MOSFET N-CH 525V 5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V |
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STD3LN62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
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STD96N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
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STGB3NC120HDT4 | STMicroelectronics |
Description: IGBT 1200V 14A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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STH180N10F3-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V |
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STH270N4F3-6 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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STL100N1VH5 | STMicroelectronics |
Description: MOSFET N-CH 12V 100A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V |
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STL40DN3LLH5 | STMicroelectronics |
Description: MOSFET 2N-CH 30V 40A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STL75N3LLZH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 75A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
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STB24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
на замовлення 901 шт: термін постачання 21-31 дні (днів) |
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STB6N52K3 | STMicroelectronics |
Description: MOSFET N-CH 525V 5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 525 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V |
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STD96N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V |
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STGB3NC120HDT4 | STMicroelectronics |
Description: IGBT 1200V 14A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 51 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/118ns Switching Energy: 236µJ (on), 290µJ (off) Test Condition: 800V, 3A, 10Ohm, 15V Gate Charge: 24 nC Part Status: Active Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 20 A Power - Max: 75 W |
на замовлення 2753 шт: термін постачання 21-31 дні (днів) |
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STD3LN62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||
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STL100N1VH5 | STMicroelectronics |
Description: MOSFET N-CH 12V 100A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 500mV @ 250µA (Min) Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STL75N3LLZH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 75A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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STH180N10F3-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 180A H2PAK-2 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V |
на замовлення 610 шт: термін постачання 21-31 дні (днів) |
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STH270N4F3-6 | STMicroelectronics |
Description: MOSFET N-CH 40V 180A H2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||
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STTH1002CGY-TR | STMicroelectronics |
Description: DIODE ARRAY GP 200V 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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STN3N40K3 | STMicroelectronics |
Description: MOSFET N-CH 400V 1.8A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V Power Dissipation (Max): 3.3W (Ta) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V |
на замовлення 53468 шт: термін постачання 21-31 дні (днів) |
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STL40DN3LLH5 | STMicroelectronics |
Description: MOSFET 2N-CH 30V 40A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 60W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
на замовлення 3123 шт: термін постачання 21-31 дні (днів) |
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ESDARF03-1BF3 | STMicroelectronics |
Description: TVS DIODE 3VWM 4FLIPCHIP Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -30°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.6pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 4-FlipChip Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Obsolete |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STT13005-K | STMicroelectronics |
Description: TRANS NPN 400V 2A SOT32-3 Packaging: Bag Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V Supplier Device Package: SOT-32-3 Part Status: Obsolete Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 45 W |
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STP24NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 17A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
на замовлення 481 шт: термін постачання 21-31 дні (днів) |
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STB18N55M5 | STMicroelectronics |
Description: MOSFET N-CH 550V 16A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP180N10F3 | STMicroelectronics |
Description: MOSFET N-CH 100V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V Power Dissipation (Max): 315W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V |
на замовлення 35 шт: термін постачання 21-31 дні (днів) |
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STP260N6F6 | STMicroelectronics |
Description: MOSFET N-CH 60V 120A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STP3LN62K3 | STMicroelectronics |
Description: MOSFET N-CH 620V 2.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
на замовлення 964 шт: термін постачання 21-31 дні (днів) |
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STP52N25M5 | STMicroelectronics |
Description: MOSFET N-CH 250V 28A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ESDARF03-1BF3 | STMicroelectronics |
Description: TVS DIODE 3VWM 4FLIPCHIP Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Type: Zener Operating Temperature: -30°C ~ 85°C (TA) Applications: RF Antenna Capacitance @ Frequency: 0.6pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 4-FlipChip Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Power - Peak Pulse: 60W Power Line Protection: No Part Status: Obsolete |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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STY112N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 96A MAX247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: MAX247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V |
на замовлення 328 шт: термін постачання 21-31 дні (днів) |
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STB16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STB16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STM6503SEAADG6F | STMicroelectronics |
Description: IC SUPERVISOR 1 CHANNEL 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WFDFN Mounting Type: Surface Mount Output: Open Drain or Open Collector Type: Reset Timer Reset: Active Low Operating Temperature: -40°C ~ 85°C (TA) Number of Voltages Monitored: 1 Reset Timeout: 140ms Minimum Voltage - Threshold: 2.925V Supplier Device Package: 8-TDFN (2x2) DigiKey Programmable: Not Verified |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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LSM303DLMTR | STMicroelectronics |
Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA Packaging: Tape & Reel (TR) Package / Case: 28-VFLGA Module Output Type: I2C Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Magnetometer, 6 Axis Supplier Device Package: 28-LGA (5x5) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VIPER28HDTR | STMicroelectronics |
Description: IC OFFLINE SWITCH FLYBACK 16SO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 115kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V Supplier Device Package: 16-SO Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 14 V Part Status: Active Power (Watts): 16 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VIPER28LDTR | STMicroelectronics |
Description: IC OFFLINE SWITCH FLYBACK 16SO Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 80% Frequency - Switching: 60kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V Supplier Device Package: 16-SO Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit Voltage - Start Up: 14 V Power (Watts): 16 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ST2329IQTR | STMicroelectronics |
Description: IC TRANSLTR BIDIRECTIONAL 10QFN Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 10-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 18Mbps Supplier Device Package: 10-QFN (1.8x1.4) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1.65 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Obsolete Number of Circuits: 1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSV6191AICT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SC70-5 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 10.5µA Slew Rate: 0.08V/µs Gain Bandwidth Product: 450 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 800 µV Supplier Device Package: SC-70-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 63 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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TSV6191AILT | STMicroelectronics |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 10.5µA Slew Rate: 0.08V/µs Gain Bandwidth Product: 450 kHz Current - Input Bias: 1 pA Voltage - Input Offset: 800 µV Supplier Device Package: SOT-23-5 Number of Circuits: 1 Current - Output / Channel: 63 mA Voltage - Supply Span (Min): 1.5 V Voltage - Supply Span (Max): 5.5 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STTS3000B2DN3F | STMicroelectronics |
Description: IC MEMORY MOD TEMP SENSOR 8TDFN Packaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Output Type: 2-Wire Serial, I2C/SMBUS Mounting Type: Surface Mount Function: Temp Monitoring System (Sensor), DIMM DDR Memory Accuracy: ±3°C(Max) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2.3V ~ 3.6V Sensor Type: Internal Sensing Temperature: -40°C ~ 125°C Topology: ADC (Sigma Delta), Comparator, Register Bank Output Alarm: Yes Output Fan: No Supplier Device Package: 8-TDFN (2x3) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STLED325QTR | STMicroelectronics |
Description: IC DRVR 8 SEGMENT 5 DIGIT 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Display Type: LED Mounting Type: Surface Mount Interface: I2C Configuration: 8 Segment Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Digits or Characters: 5 Digits Supplier Device Package: 32-QFN (5x5) Current - Supply: 2 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
MP34DB01TR | STMicroelectronics |
Description: MIC MEMS DIGITAL PDM OMNI -26DB Packaging: Tape & Reel (TR) Output Type: Digital, PDM Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm) Sensitivity: -26dB ±3dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 62.6dB Termination: Solder Pads Direction: Omnidirectional Port Location: Bottom Height (Max): 0.043" (1.10mm) Part Status: Obsolete Voltage - Rated: 1.8 V Current - Supply: 650 µA Voltage Range: 1.64 V ~ 3.6 V Frequency Range: 20 Hz ~ 20 kHz |
товару немає в наявності |
В кошику од. на суму грн. |
| STM3220G-EVAL |
|
Виробник: STMicroelectronics
Description: STM32 F2 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F2
Part Status: Obsolete
Description: STM32 F2 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F2
Part Status: Obsolete
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| STM3221G-EVAL |
|
Виробник: STMicroelectronics
Description: STM32 F2 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F2
Part Status: Obsolete
Description: STM32 F2 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M3
Board Type: Evaluation Platform
Utilized IC / Part: STM32 F2
Part Status: Obsolete
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В кошику
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| STL160N3LLH6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
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| STL23NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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В кошику
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| STL24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 16A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 161.79 грн |
| STL35N15F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
Description: MOSFET N-CH 150V 33A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.5A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1905 pF @ 25 V
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| STPSC1006G-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
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| STPSC806G-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| STL24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 16A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 16A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 215mOhm @ 8A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 6957 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 427.43 грн |
| 10+ | 274.25 грн |
| 100+ | 196.62 грн |
| 500+ | 153.46 грн |
| 1000+ | 146.21 грн |
| STL23NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
Description: MOSFET N-CH 600V 19.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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| STL160N3LLH6 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V
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| STPSC1006G-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 650pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
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| STPSC806G-TR |
|
Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE SIL CARBIDE 600V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 450pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: D²PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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| STN3N40K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 52000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 18.05 грн |
| STTH1002CGY-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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| ESDAXLC4-1BF3 |
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
Description: TVS DIODE 3VWM 10VC 2FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.3pF @ 200MHz ~ 3GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 2-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 55W
Power Line Protection: No
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| STB24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
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| STB6N52K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Description: MOSFET N-CH 525V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
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| STD3LN62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: MOSFET N-CH 620V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
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| STD96N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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| STGB3NC120HDT4 |
|
Виробник: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
Description: IGBT 1200V 14A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 56.10 грн |
| 2000+ | 50.09 грн |
| STH180N10F3-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
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| STH270N4F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| STL100N1VH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Description: MOSFET N-CH 12V 100A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
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| STL40DN3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 35.57 грн |
| STL75N3LLZH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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| STB24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 901 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 448.36 грн |
| 10+ | 328.97 грн |
| 100+ | 246.02 грн |
| STB6N52K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 525V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
Description: MOSFET N-CH 525V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 525 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 50 V
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| STD96N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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| STGB3NC120HDT4 |
|
Виробник: STMicroelectronics
Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
Description: IGBT 1200V 14A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 51 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 15ns/118ns
Switching Energy: 236µJ (on), 290µJ (off)
Test Condition: 800V, 3A, 10Ohm, 15V
Gate Charge: 24 nC
Part Status: Active
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 75 W
на замовлення 2753 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 173.07 грн |
| 10+ | 107.20 грн |
| 100+ | 73.24 грн |
| 500+ | 55.08 грн |
| STD3LN62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: MOSFET N-CH 620V 2.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
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| STL100N1VH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 12V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
Description: MOSFET N-CH 12V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 12.5A, 4.5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 500mV @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 10 V
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| STL75N3LLZH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
Description: MOSFET N-CH 30V 75A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 9.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1510 pF @ 25 V
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| STH180N10F3-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Description: MOSFET N-CH 100V 180A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 610 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 484.58 грн |
| 10+ | 313.47 грн |
| 100+ | 226.53 грн |
| 500+ | 177.83 грн |
| STH270N4F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 180A H2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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| STTH1002CGY-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARRAY GP 200V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 377 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.74 грн |
| 10+ | 68.76 грн |
| 100+ | 53.73 грн |
| STN3N40K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
Description: MOSFET N-CH 400V 1.8A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 600mA, 10V
Power Dissipation (Max): 3.3W (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 50 V
на замовлення 53468 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 72.45 грн |
| 10+ | 49.61 грн |
| 100+ | 33.40 грн |
| 500+ | 24.33 грн |
| 1000+ | 22.07 грн |
| 2000+ | 20.17 грн |
| STL40DN3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Description: MOSFET 2N-CH 30V 40A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 60W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 25V
Rds On (Max) @ Id, Vgs: 18mOhm @ 5.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
на замовлення 3123 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 132.01 грн |
| 10+ | 80.61 грн |
| 100+ | 53.99 грн |
| 500+ | 39.96 грн |
| 1000+ | 36.52 грн |
| ESDARF03-1BF3 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3VWM 4FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Obsolete
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 20.02 грн |
| STT13005-K |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
Description: TRANS NPN 400V 2A SOT32-3
Packaging: Bag
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 400mA, 1.6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
Supplier Device Package: SOT-32-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 45 W
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од. на суму грн.
| STP24NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: MOSFET N-CH 600V 17A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
на замовлення 481 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.66 грн |
| 50+ | 120.13 грн |
| 100+ | 119.79 грн |
| STB18N55M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Description: MOSFET N-CH 550V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
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| STP180N10F3 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
Description: MOSFET N-CH 100V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 60A, 10V
Power Dissipation (Max): 315W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 114.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6665 pF @ 25 V
на замовлення 35 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 461.24 грн |
| STP260N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
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| STP3LN62K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 620V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: MOSFET N-CH 620V 2.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.25A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
на замовлення 964 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.86 грн |
| 50+ | 53.78 грн |
| 100+ | 50.94 грн |
| 500+ | 42.20 грн |
| STP52N25M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
Description: MOSFET N-CH 250V 28A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 14A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 50 V
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| ESDARF03-1BF3 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 3VWM 4FLIPCHIP
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.6pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 4-FlipChip
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Power - Peak Pulse: 60W
Power Line Protection: No
Part Status: Obsolete
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STY112N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
Description: MOSFET N-CH 650V 96A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 47A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: MAX247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16870 pF @ 100 V
на замовлення 328 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2199.14 грн |
| 30+ | 1650.77 грн |
| STB16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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| STB16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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| STM6503SEAADG6F |
|
Виробник: STMicroelectronics
Description: IC SUPERVISOR 1 CHANNEL 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Reset Timer
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.925V
Supplier Device Package: 8-TDFN (2x2)
DigiKey Programmable: Not Verified
Description: IC SUPERVISOR 1 CHANNEL 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN
Mounting Type: Surface Mount
Output: Open Drain or Open Collector
Type: Reset Timer
Reset: Active Low
Operating Temperature: -40°C ~ 85°C (TA)
Number of Voltages Monitored: 1
Reset Timeout: 140ms Minimum
Voltage - Threshold: 2.925V
Supplier Device Package: 8-TDFN (2x2)
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 47.16 грн |
| LSM303DLMTR |
|
Виробник: STMicroelectronics
Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Packaging: Tape & Reel (TR)
Package / Case: 28-VFLGA Module
Output Type: I2C
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Supplier Device Package: 28-LGA (5x5)
Part Status: Obsolete
Description: IMU ACCEL/MAG 3-AXIS I2C 28LGA
Packaging: Tape & Reel (TR)
Package / Case: 28-VFLGA Module
Output Type: I2C
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, 6 Axis
Supplier Device Package: 28-LGA (5x5)
Part Status: Obsolete
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| VIPER28HDTR |
|
Виробник: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 115kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Part Status: Active
Power (Watts): 16 W
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| VIPER28LDTR |
|
Виробник: STMicroelectronics
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Power (Watts): 16 W
Description: IC OFFLINE SWITCH FLYBACK 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 60kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 23.5V
Supplier Device Package: 16-SO
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 14 V
Power (Watts): 16 W
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| ST2329IQTR |
|
Виробник: STMicroelectronics
Description: IC TRANSLTR BIDIRECTIONAL 10QFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 10-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 18Mbps
Supplier Device Package: 10-QFN (1.8x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Obsolete
Number of Circuits: 1
Description: IC TRANSLTR BIDIRECTIONAL 10QFN
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 10-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 18Mbps
Supplier Device Package: 10-QFN (1.8x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Obsolete
Number of Circuits: 1
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| TSV6191AICT |
|
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SC-70-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 37.01 грн |
| 6000+ | 33.86 грн |
| 15000+ | 32.59 грн |
| TSV6191AILT |
|
Виробник: STMicroelectronics
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 10.5µA
Slew Rate: 0.08V/µs
Gain Bandwidth Product: 450 kHz
Current - Input Bias: 1 pA
Voltage - Input Offset: 800 µV
Supplier Device Package: SOT-23-5
Number of Circuits: 1
Current - Output / Channel: 63 mA
Voltage - Supply Span (Min): 1.5 V
Voltage - Supply Span (Max): 5.5 V
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| STTS3000B2DN3F |
|
Виробник: STMicroelectronics
Description: IC MEMORY MOD TEMP SENSOR 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor), DIMM DDR Memory
Accuracy: ±3°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Sensor Type: Internal
Sensing Temperature: -40°C ~ 125°C
Topology: ADC (Sigma Delta), Comparator, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 8-TDFN (2x3)
Description: IC MEMORY MOD TEMP SENSOR 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Output Type: 2-Wire Serial, I2C/SMBUS
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor), DIMM DDR Memory
Accuracy: ±3°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.3V ~ 3.6V
Sensor Type: Internal
Sensing Temperature: -40°C ~ 125°C
Topology: ADC (Sigma Delta), Comparator, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 8-TDFN (2x3)
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| STLED325QTR |
|
Виробник: STMicroelectronics
Description: IC DRVR 8 SEGMENT 5 DIGIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LED
Mounting Type: Surface Mount
Interface: I2C
Configuration: 8 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Digits or Characters: 5 Digits
Supplier Device Package: 32-QFN (5x5)
Current - Supply: 2 mA
Description: IC DRVR 8 SEGMENT 5 DIGIT 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Display Type: LED
Mounting Type: Surface Mount
Interface: I2C
Configuration: 8 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Digits or Characters: 5 Digits
Supplier Device Package: 32-QFN (5x5)
Current - Supply: 2 mA
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| MP34DB01TR |
|
Виробник: STMicroelectronics
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS DIGITAL PDM OMNI -26DB
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -26dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 62.6dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.10mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 650 µA
Voltage Range: 1.64 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
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