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TSX922IQ2T TSX922IQ2T STMicroelectronics tsx922.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; DFN8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: DFN8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Kind of package: reel; tape
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TSX922IYDT TSX922IYDT STMicroelectronics tsx922.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; SO8; 6.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 6.5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Application: automotive industry
Kind of package: reel; tape
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TSX922IYST STMicroelectronics en.DM00078379.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; miniSO8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 14.7V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 5mV
Input bias current: 10pA
Input offset current: 10pA
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TSX921ILT TSX921ILT STMicroelectronics tsx921.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
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TSX921IYLT TSX921IYLT STMicroelectronics tsx921.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
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VIPER013BLSTR STMicroelectronics en.DM00493503.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 275000 шт:
термін постачання 21-30 дні (днів)
2500+37.35 грн
Мінімальне замовлення: 2500
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TSV912AIDT TSV912AIDT STMicroelectronics tsv912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
на замовлення 2115 шт:
термін постачання 21-30 дні (днів)
5+94.71 грн
6+76.33 грн
25+65.55 грн
Мінімальне замовлення: 5
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TSV912IDT TSV912IDT STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912AIST TSV912AIST STMicroelectronics tsv912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912AIYDT TSV912AIYDT STMicroelectronics tsv912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912AIYST STMicroelectronics tsv912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912IQ2T STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912IST STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912IYDT TSV912IYDT STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912IYST TSV912IYST STMicroelectronics tsv912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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ESDA6V1-5SC6Y ESDA6V1-5SC6Y STMicroelectronics en.DM00342426.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
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SMBJ130A-TR SMBJ130A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 686 шт:
термін постачання 21-30 дні (днів)
11+41.10 грн
14+31.36 грн
25+27.88 грн
100+21.66 грн
250+19.83 грн
500+17.17 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SMBJ170CA-TR SMBJ170CA-TR STMicroelectronics SMBJ-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)
18+25.02 грн
24+17.59 грн
28+15.18 грн
100+12.20 грн
125+11.86 грн
250+10.87 грн
500+10.12 грн
650+9.87 грн
1300+9.38 грн
Мінімальне замовлення: 18
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SMBJ13CA-TR SMBJ13CA-TR STMicroelectronics SMBJ-st.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 908 шт:
термін постачання 21-30 дні (днів)
18+25.91 грн
24+17.59 грн
27+15.52 грн
31+13.44 грн
100+11.37 грн
125+11.12 грн
250+10.54 грн
500+10.12 грн
Мінімальне замовлення: 18
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SMBJ10A-TR SMBJ10A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2230 шт:
термін постачання 21-30 дні (днів)
21+21.44 грн
26+16.43 грн
28+15.18 грн
50+12.28 грн
100+11.12 грн
250+9.54 грн
500+8.21 грн
1000+7.05 грн
1300+6.64 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
SMBJ26CA-TR SMBJ26CA-TR STMicroelectronics SMBJ12CA-TR.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1556 шт:
термін постачання 21-30 дні (днів)
16+29.49 грн
19+22.40 грн
25+19.91 грн
100+15.43 грн
250+14.19 грн
500+12.28 грн
1000+9.38 грн
Мінімальне замовлення: 16
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STEVAL-POE003V1 STMicroelectronics STEVAL-POE003V1.pdf Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
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STPS20L60CGY-TR STMicroelectronics STPS20L60C-Y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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1N5817 1N5817 STMicroelectronics 1N5819RL.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
32+14.30 грн
38+11.12 грн
41+10.29 грн
50+8.31 грн
100+7.45 грн
Мінімальне замовлення: 32
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SMAJ28CA-TR SMAJ28CA-TR STMicroelectronics SMAJxxX_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 2056 шт:
термін постачання 21-30 дні (днів)
25+17.87 грн
35+12.03 грн
39+10.70 грн
50+8.96 грн
100+7.88 грн
250+6.80 грн
500+6.14 грн
1000+5.56 грн
Мінімальне замовлення: 25
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P6KE10A P6KE10A STMicroelectronics P6KE6V8A.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
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1.5KE12A 1.5KE12A STMicroelectronics 1.5KE100A.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
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STM32F051K8U7TR STMicroelectronics en.DM00039193.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
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SMCJ6.0A-TR SMCJ6.0A-TR STMicroelectronics SMCJ33CA-TR.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
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STPS1L60ZF STPS1L60ZF STMicroelectronics en.CD00002285.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
на замовлення 669 шт:
термін постачання 21-30 дні (днів)
20+22.34 грн
30+13.94 грн
50+9.21 грн
100+7.72 грн
500+6.06 грн
Мінімальне замовлення: 20
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STPS1L60ZFY STPS1L60ZFY STMicroelectronics stps1l60-y.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
на замовлення 1574 шт:
термін постачання 21-30 дні (днів)
20+22.34 грн
26+16.43 грн
29+14.77 грн
33+12.69 грн
50+11.28 грн
100+9.87 грн
250+9.13 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
STL10N60M6 STMicroelectronics stl10n60m6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
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STH180N10F3-2 STMicroelectronics en.DM00034472.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17000 шт:
термін постачання 21-30 дні (днів)
1000+125.99 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STPS3L45AF STMicroelectronics en.DM00089408.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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STM32L073V8T6 STM32L073V8T6 STMicroelectronics STM32L073CBT6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
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STM32F411RCT7 STMicroelectronics en.DM00115249.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
160+302.01 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
STTH1002CR STTH1002CR STMicroelectronics en.CD00005113.pdf Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
17+27.70 грн
18+23.48 грн
50+21.74 грн
100+20.74 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
STTH1002CB-TR STTH1002CB-TR STMicroelectronics STTH1002CB-TR.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
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STD110N8F6 STMicroelectronics en.DM00151073.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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ESDALC6V1P6 ESDALC6V1P6 STMicroelectronics esdalc6v1px.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
на замовлення 2730 шт:
термін постачання 21-30 дні (днів)
17+26.81 грн
24+17.84 грн
26+16.51 грн
75+11.95 грн
100+11.37 грн
300+9.38 грн
500+8.79 грн
1000+8.05 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
ESDA14V2BP6 ESDA14V2BP6 STMicroelectronics esdaxxxp6.pdf description Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
14+33.95 грн
20+20.91 грн
100+13.61 грн
250+11.53 грн
500+10.29 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SCTH35N65G2V-7 STMicroelectronics scth35n65g2v-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH35N65G2V-7AG STMicroelectronics scth35n65g2v-7ag.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSV992IDT TSV992IDT STMicroelectronics tsv992.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)
5+98.29 грн
6+77.16 грн
10+68.87 грн
25+60.57 грн
100+52.27 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSV994IPT TSV994IPT STMicroelectronics tsv994.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2335 шт:
термін постачання 21-30 дні (днів)
5+84.63 грн
10+76.33 грн
25+71.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STP35N60DM2 STP35N60DM2 STMicroelectronics STP35N60DM2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STB35N60DM2 STMicroelectronics STB35N60DM2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
1000+234.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
Z0103MA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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Z0103MN 6AA4 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
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Z0103NA 2AL2 STMicroelectronics en.CD00002268.pdf Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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STD13NM60ND STMicroelectronics STx13NM60ND_DS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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M95512-RMN6TP M95512-RMN6TP STMicroelectronics M95512-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1138 шт:
термін постачання 21-30 дні (днів)
10+49.14 грн
250+41.90 грн
500+39.83 грн
1000+37.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
M95512-RDW6TP M95512-RDW6TP STMicroelectronics M95512-RDW6TP.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
8+58.08 грн
10+50.53 грн
100+45.88 грн
500+42.40 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
M95512-RMN6P M95512-RMN6P STMicroelectronics m24512-df.pdf Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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TS912AIDT TS912AIDT STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 4837 шт:
термін постачання 21-30 дні (днів)
6+83.99 грн
7+66.38 грн
10+59.74 грн
25+52.27 грн
50+48.95 грн
100+45.63 грн
250+42.32 грн
2500+40.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS912IDT TS912IDT STMicroelectronics TS912IDT.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)
6+87.57 грн
7+67.87 грн
10+61.40 грн
25+54.18 грн
50+49.95 грн
100+46.80 грн
250+43.81 грн
2500+39.99 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS912BIDT TS912BIDT STMicroelectronics ts912b.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1502 шт:
термін постачання 21-30 дні (днів)
5+92.03 грн
6+73.01 грн
10+66.38 грн
25+59.74 грн
75+53.93 грн
100+53.10 грн
250+50.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TS912ID TS912ID STMicroelectronics TS912IDT.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1207 шт:
термін постачання 21-30 дні (днів)
4+128.67 грн
5+99.56 грн
10+90.44 грн
25+88.78 грн
Мінімальне замовлення: 4
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TS912IYDT TS912IYDT STMicroelectronics ts912.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS912AIYDT TS912AIYDT STMicroelectronics ts912a.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TSX922IQ2T tsx922.pdf
TSX922IQ2T
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; DFN8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: DFN8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Kind of package: reel; tape
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TSX922IYDT tsx922.pdf
TSX922IYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; SO8; 6.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 6.5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Application: automotive industry
Kind of package: reel; tape
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TSX922IYST en.DM00078379.pdf
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; miniSO8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 14.7V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 5mV
Input bias current: 10pA
Input offset current: 10pA
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TSX921ILT tsx921.pdf
TSX921ILT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
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TSX921IYLT tsx921.pdf
TSX921IYLT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
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VIPER013BLSTR en.DM00493503.pdf
Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 275000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2500+37.35 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSV912AIDT tsv912a.pdf
TSV912AIDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
на замовлення 2115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+94.71 грн
6+76.33 грн
25+65.55 грн
Мінімальне замовлення: 5
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TSV912IDT tsv912.pdf
TSV912IDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912AIST tsv912a.pdf
TSV912AIST
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912AIYDT tsv912a.pdf
TSV912AIYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912AIYST tsv912a.pdf
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912IQ2T tsv912.pdf
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912IST tsv912.pdf
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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TSV912IYDT tsv912.pdf
TSV912IYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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TSV912IYST tsv912.pdf
TSV912IYST
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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ESDA6V1-5SC6Y en.DM00342426.pdf
ESDA6V1-5SC6Y
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
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SMBJ130A-TR SMBJ-st.pdf
SMBJ130A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 686 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
11+41.10 грн
14+31.36 грн
25+27.88 грн
100+21.66 грн
250+19.83 грн
500+17.17 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SMBJ170CA-TR SMBJ-st.pdf
SMBJ170CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.02 грн
24+17.59 грн
28+15.18 грн
100+12.20 грн
125+11.86 грн
250+10.87 грн
500+10.12 грн
650+9.87 грн
1300+9.38 грн
Мінімальне замовлення: 18
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SMBJ13CA-TR SMBJ-st.pdf
SMBJ13CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 908 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.91 грн
24+17.59 грн
27+15.52 грн
31+13.44 грн
100+11.37 грн
125+11.12 грн
250+10.54 грн
500+10.12 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SMBJ10A-TR SMBJ-st.pdf
SMBJ10A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
21+21.44 грн
26+16.43 грн
28+15.18 грн
50+12.28 грн
100+11.12 грн
250+9.54 грн
500+8.21 грн
1000+7.05 грн
1300+6.64 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
SMBJ26CA-TR SMBJ12CA-TR.pdf
SMBJ26CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1556 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+29.49 грн
19+22.40 грн
25+19.91 грн
100+15.43 грн
250+14.19 грн
500+12.28 грн
1000+9.38 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
STEVAL-POE003V1 STEVAL-POE003V1.pdf
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
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STPS20L60CGY-TR STPS20L60C-Y.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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1N5817 1N5819RL.pdf
1N5817
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+14.30 грн
38+11.12 грн
41+10.29 грн
50+8.31 грн
100+7.45 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SMAJ28CA-TR SMAJxxX_ser.pdf
SMAJ28CA-TR
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 2056 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
25+17.87 грн
35+12.03 грн
39+10.70 грн
50+8.96 грн
100+7.88 грн
250+6.80 грн
500+6.14 грн
1000+5.56 грн
Мінімальне замовлення: 25
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P6KE10A P6KE6V8A.pdf
P6KE10A
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
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1.5KE12A 1.5KE100A.pdf
1.5KE12A
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
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STM32F051K8U7TR en.DM00039193.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
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SMCJ6.0A-TR SMCJ33CA-TR.pdf
SMCJ6.0A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
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STPS1L60ZF en.CD00002285.pdf
STPS1L60ZF
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
на замовлення 669 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.34 грн
30+13.94 грн
50+9.21 грн
100+7.72 грн
500+6.06 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
STPS1L60ZFY stps1l60-y.pdf
STPS1L60ZFY
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
на замовлення 1574 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+22.34 грн
26+16.43 грн
29+14.77 грн
33+12.69 грн
50+11.28 грн
100+9.87 грн
250+9.13 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
STL10N60M6 stl10n60m6.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
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STH180N10F3-2 en.DM00034472.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+125.99 грн
Мінімальне замовлення: 1000
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STPS3L45AF en.DM00089408.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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STM32L073V8T6 STM32L073CBT6.pdf
STM32L073V8T6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
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STM32F411RCT7 en.DM00115249.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
160+302.01 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
STTH1002CR en.CD00005113.pdf
STTH1002CR
Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+27.70 грн
18+23.48 грн
50+21.74 грн
100+20.74 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
STTH1002CB-TR STTH1002CB-TR.pdf
STTH1002CB-TR
Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
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STD110N8F6 en.DM00151073.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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ESDALC6V1P6 esdalc6v1px.pdf
ESDALC6V1P6
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
на замовлення 2730 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+26.81 грн
24+17.84 грн
26+16.51 грн
75+11.95 грн
100+11.37 грн
300+9.38 грн
500+8.79 грн
1000+8.05 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
ESDA14V2BP6 description esdaxxxp6.pdf
ESDA14V2BP6
Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 540 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+33.95 грн
20+20.91 грн
100+13.61 грн
250+11.53 грн
500+10.29 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SCTH35N65G2V-7 scth35n65g2v-7.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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SCTH35N65G2V-7AG scth35n65g2v-7ag.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSV992IDT tsv992.pdf
TSV992IDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+98.29 грн
6+77.16 грн
10+68.87 грн
25+60.57 грн
100+52.27 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TSV994IPT tsv994.pdf
TSV994IPT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2335 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+84.63 грн
10+76.33 грн
25+71.35 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
STP35N60DM2 STP35N60DM2.pdf
STP35N60DM2
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STB35N60DM2 STB35N60DM2.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1000+234.10 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
Z0103MA 2AL2 en.CD00002268.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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Z0103MN 6AA4 en.CD00002268.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
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Z0103NA 2AL2 en.CD00002268.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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STD13NM60ND STx13NM60ND_DS.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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M95512-RMN6TP M95512-RDW6TP.pdf
M95512-RMN6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+49.14 грн
250+41.90 грн
500+39.83 грн
1000+37.17 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
M95512-RDW6TP M95512-RDW6TP.pdf
M95512-RDW6TP
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+58.08 грн
10+50.53 грн
100+45.88 грн
500+42.40 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
M95512-RMN6P m24512-df.pdf
M95512-RMN6P
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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TS912AIDT TS912IDT.pdf
TS912AIDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 4837 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+83.99 грн
7+66.38 грн
10+59.74 грн
25+52.27 грн
50+48.95 грн
100+45.63 грн
250+42.32 грн
2500+40.66 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS912IDT description TS912IDT.pdf
TS912IDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+87.57 грн
7+67.87 грн
10+61.40 грн
25+54.18 грн
50+49.95 грн
100+46.80 грн
250+43.81 грн
2500+39.99 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TS912BIDT description ts912b.pdf
TS912BIDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1502 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+92.03 грн
6+73.01 грн
10+66.38 грн
25+59.74 грн
75+53.93 грн
100+53.10 грн
250+50.61 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TS912ID TS912IDT.pdf
TS912ID
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+128.67 грн
5+99.56 грн
10+90.44 грн
25+88.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
TS912IYDT ts912.pdf
TS912IYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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TS912AIYDT ts912a.pdf
TS912AIYDT
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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