Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162788) > Сторінка 2710 з 2714
| Фото | Назва | Виробник | Інформація |
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TSX922IQ2T | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; DFN8; 5mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: 2 Mounting: SMT Voltage supply range: 4...16V DC Case: DFN8 Operating temperature: -40...125°C Slew rate: 16.2V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 5mV Input bias current: 0.2nA Input offset current: 0.2nA Quiescent current: 3.4mA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSX922IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; SO8; 6.5mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: 2 Mounting: SMT Voltage supply range: 4...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 16.2V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 6.5mV Input bias current: 0.2nA Input offset current: 0.2nA Quiescent current: 3.4mA Application: automotive industry Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSX922IYST | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; miniSO8; 5mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: 2 Mounting: SMT Voltage supply range: 4...16V DC Case: miniSO8 Operating temperature: -40...125°C Slew rate: 14.7V/μs Integrated circuit features: rail-to-rail Input offset voltage: 5mV Input bias current: 10pA Input offset current: 10pA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSX921ILT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: 1 Mounting: SMT Voltage supply range: 4...16V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 16.2V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 3.4mA Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 0.2nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSX921IYLT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV Type of integrated circuit: operational amplifier Bandwidth: 10MHz Number of channels: 1 Mounting: SMT Voltage supply range: 4...16V DC Case: SOT23-5 Operating temperature: -40...125°C Slew rate: 16.2V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 3.4mA Input offset voltage: 5mV Kind of package: reel; tape Input bias current: 0.2nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| VIPER013BLSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 275000 шт: термін постачання 21-30 дні (днів) |
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TSV912AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
на замовлення 2115 шт: термін постачання 21-30 дні (днів) |
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TSV912IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSV912AIST | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: MSOP8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSV912AIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| TSV912AIYST | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 3mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: miniSO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 3mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSV912IQ2T | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: DFN8 2x2 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| TSV912IST | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: miniSO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSV912IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSV912IYST | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV Type of integrated circuit: operational amplifier Bandwidth: 8MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.5...5.5V DC Case: MSOP8 Operating temperature: -40...125°C Slew rate: 4.5V/μs Integrated circuit features: rail-to-rail; universal Quiescent current: 1.1mA Input offset voltage: 7.5mV Kind of package: reel; tape Input bias current: 0.1nA Input offset current: 0.1nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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ESDA6V1-5SC6Y | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD Type of diode: TVS array Breakdown voltage: 6.1V Max. forward impulse current: 7A Peak pulse power dissipation: 80W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6 Max. off-state voltage: 5.2V Leakage current: 1mA Number of channels: 5 Kind of package: reel; tape Application: automotive industry Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SMBJ130A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 130V Breakdown voltage: 152V Max. forward impulse current: 3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 686 шт: термін постачання 21-30 дні (днів) |
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SMBJ170CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 170V Breakdown voltage: 199V Max. forward impulse current: 2.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1788 шт: термін постачання 21-30 дні (днів) |
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SMBJ13CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 13V Breakdown voltage: 15.2V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 908 шт: термін постачання 21-30 дні (днів) |
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SMBJ10A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 37A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2230 шт: термін постачання 21-30 дні (днів) |
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SMBJ26CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30.4V Max. forward impulse current: 14.9A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1556 шт: термін постачання 21-30 дні (днів) |
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| STEVAL-POE003V1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A Interface: Ethernet Kind of connector: power supply; RJ45 x2 Components: PM8804; PM8805 Additional functions: Power over Ethernet (PoE) Kit contents: prototype board Output voltage 3: 5V DC Output current: 20A Type of development kit: evaluation |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STPS20L60CGY-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.74V Max. load current: 30A Leakage current: 95mA Max. forward impulse current: 220A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1N5817 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 260 шт: термін постачання 21-30 дні (днів) |
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SMAJ28CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 39A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 2056 шт: термін постачання 21-30 дні (днів) |
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P6KE10A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8.55V Breakdown voltage: 10V Max. forward impulse current: 41A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE12A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; DO201; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F051K8U7TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 48MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 2...3.6V DC Interface: HDMI CEC; I2C; SPI; USART x2 Kind of architecture: Cortex M0 Memory: 8kB SRAM; 64kB FLASH Number of 16bit timers: 7 Number of 32bit timers: 1 Family: STM32F0 Kind of core: 32-bit Number of 12bit D/A converters: 1 Number of 12bit A/D converters: 13 Operating temperature: -40...105°C Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ6.0A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 6V Breakdown voltage: 7.05V Max. forward impulse current: 152A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 2mA Manufacturer series: SMCJ Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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STPS1L60ZF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. load current: 10A Max. forward impulse current: 60A Kind of package: reel; tape Leakage current: 21mA |
на замовлення 669 шт: термін постачання 21-30 дні (днів) |
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STPS1L60ZFY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 60V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. load current: 10A Max. forward impulse current: 60A Kind of package: reel; tape Application: automotive industry |
на замовлення 1574 шт: термін постачання 21-30 дні (днів) |
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| STL10N60M6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 48W Case: PowerFLAT 5x6 On-state resistance: 0.66Ω Mounting: SMD Kind of channel: enhancement Gate charge: 8.8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STH180N10F3-2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 17000 шт: термін постачання 21-30 дні (днів) |
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| STPS3L45AF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA flat Mounting: SMD Max. off-state voltage: 45V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.57V Leakage current: 135mA Max. forward impulse current: 75A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32L073V8T6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 84 Case: LQFP100 Supply voltage: 1.8...3.6V DC Interface: I2C; IrDA; LIN; SPI; UART; USART; USB Kind of architecture: Cortex M0+ Memory: 20kB SRAM; 64kB FLASH Operating temperature: -40...85°C Family: STM32L0 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F411RCT7 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller Type of integrated circuit: STM32 ARM microcontroller |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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STTH1002CR | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying Type of diode: rectifying |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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STTH1002CB-TR | STMicroelectronics |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Max. forward impulse current: 50A Case: DPAK Max. forward voltage: 0.78V Reverse recovery time: 20ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STD110N8F6 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 80A Power dissipation: 167W Case: DPAK; TO252 On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 150nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ESDALC6V1P6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD Type of diode: TVS array Breakdown voltage: 6.1V Peak pulse power dissipation: 30W Semiconductor structure: common anode; quadruple; unidirectional Mounting: SMD Case: SOT666IP Max. off-state voltage: 3V Number of channels: 4 Version: ESD Leakage current: 0.1µA |
на замовлення 2730 шт: термін постачання 21-30 дні (днів) |
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ESDA14V2BP6 | STMicroelectronics |
Category: Protection diodes - arraysDescription: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD Type of diode: TVS array Breakdown voltage: 14.2V Peak pulse power dissipation: 50W Semiconductor structure: bidirectional; common anode; quadruple Mounting: SMD Case: SOT666 Max. off-state voltage: 12V Number of channels: 4 Version: ESD Kind of package: reel; tape Leakage current: 1µA |
на замовлення 540 шт: термін постачання 21-30 дні (днів) |
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| SCTH35N65G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 208W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTH35N65G2V-7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 90A Power dissipation: 208W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 67mΩ Mounting: SMD Gate charge: 73nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSV992IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV Type of integrated circuit: operational amplifier Case: SO8 Mounting: SMT Integrated circuit features: low voltage; rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 0.1nA Input bias current: 0.1nA Quiescent current: 1.1mA Input offset voltage: 7.5mV Number of channels: 2 Voltage supply range: 2.5...5.5V DC Slew rate: 10V/μs Bandwidth: 20MHz |
на замовлення 2489 шт: термін постачання 21-30 дні (днів) |
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TSV994IPT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV Type of integrated circuit: operational amplifier Case: TSSOP14 Mounting: SMT Integrated circuit features: low voltage; rail-to-rail Kind of package: reel; tape Operating temperature: -40...125°C Input offset current: 0.1nA Input bias current: 0.1nA Quiescent current: 1.1mA Input offset voltage: 7.5mV Number of channels: 4 Voltage supply range: 2.5...5.5V DC Slew rate: 10V/μs Bandwidth: 20MHz |
на замовлення 2335 шт: термін постачання 21-30 дні (днів) |
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STP35N60DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 210W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STB35N60DM2 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2000 шт: термін постачання 21-30 дні (днів) |
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| Z0103MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 3mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0103MN 6AA4 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: SOT223 Gate current: 3mA Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 8A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0103NA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 1A Case: TO92 Gate current: 3mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD13NM60ND | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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M95512-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 1138 шт: термін постачання 21-30 дні (днів) |
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M95512-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 1019 шт: термін постачання 21-30 дні (днів) |
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M95512-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 512kb EEPROM Interface: SPI Memory organisation: 64kx8bit Operating voltage: 1.8...5.5V Clock frequency: 16MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS912AIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 4837 шт: термін постачання 21-30 дні (днів) |
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TS912IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 3889 шт: термін постачання 21-30 дні (днів) |
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TS912BIDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.4V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 2mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 1502 шт: термін постачання 21-30 дні (днів) |
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TS912ID | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: tube Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 1207 шт: термін постачання 21-30 дні (днів) |
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TS912IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 1.3V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS912AIYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 2 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO8 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| TSX922IQ2T |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; DFN8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: DFN8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; DFN8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: DFN8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSX922IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; SO8; 6.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 6.5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Application: automotive industry
Kind of package: reel; tape
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; SO8; 6.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 6.5mV
Input bias current: 0.2nA
Input offset current: 0.2nA
Quiescent current: 3.4mA
Application: automotive industry
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| TSX922IYST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; miniSO8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 14.7V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 5mV
Input bias current: 10pA
Input offset current: 10pA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 2; 4÷16VDC; miniSO8; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 4...16V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 14.7V/μs
Integrated circuit features: rail-to-rail
Input offset voltage: 5mV
Input bias current: 10pA
Input offset current: 10pA
товару немає в наявності
В кошику
од. на суму грн.
| TSX921ILT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
товару немає в наявності
В кошику
од. на суму грн.
| TSX921IYLT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 10MHz; Ch: 1; 4÷16VDC; SOT23-5; 5mV
Type of integrated circuit: operational amplifier
Bandwidth: 10MHz
Number of channels: 1
Mounting: SMT
Voltage supply range: 4...16V DC
Case: SOT23-5
Operating temperature: -40...125°C
Slew rate: 16.2V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 3.4mA
Input offset voltage: 5mV
Kind of package: reel; tape
Input bias current: 0.2nA
Input offset current: 0.2nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| VIPER013BLSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 275000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 37.35 грн |
| TSV912AIDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
на замовлення 2115 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 94.71 грн |
| 6+ | 76.33 грн |
| 25+ | 65.55 грн |
| TSV912IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
товару немає в наявності
В кошику
од. на суму грн.
| TSV912AIST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
товару немає в наявності
В кошику
од. на суму грн.
| TSV912AIYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| TSV912AIYST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 3mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 3mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| TSV912IQ2T |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; DFN8 2x2; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: DFN8 2x2
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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| TSV912IST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; miniSO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: miniSO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
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| TSV912IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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| TSV912IYST |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 8MHz; Ch: 2; 2.5÷5.5VDC; MSOP8; 7.5mV
Type of integrated circuit: operational amplifier
Bandwidth: 8MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.5...5.5V DC
Case: MSOP8
Operating temperature: -40...125°C
Slew rate: 4.5V/μs
Integrated circuit features: rail-to-rail; universal
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Kind of package: reel; tape
Input bias current: 0.1nA
Input offset current: 0.1nA
Application: automotive industry
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| ESDA6V1-5SC6Y |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 7A; 80W; unidirectional; SOT23-6; Ch: 5; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Max. forward impulse current: 7A
Peak pulse power dissipation: 80W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6
Max. off-state voltage: 5.2V
Leakage current: 1mA
Number of channels: 5
Kind of package: reel; tape
Application: automotive industry
Version: ESD
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| SMBJ130A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 152V; 3A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 130V
Breakdown voltage: 152V
Max. forward impulse current: 3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 686 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.10 грн |
| 14+ | 31.36 грн |
| 25+ | 27.88 грн |
| 100+ | 21.66 грн |
| 250+ | 19.83 грн |
| 500+ | 17.17 грн |
| SMBJ170CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 199V; 2.2A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 170V
Breakdown voltage: 199V
Max. forward impulse current: 2.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1788 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.02 грн |
| 24+ | 17.59 грн |
| 28+ | 15.18 грн |
| 100+ | 12.20 грн |
| 125+ | 11.86 грн |
| 250+ | 10.87 грн |
| 500+ | 10.12 грн |
| 650+ | 9.87 грн |
| 1300+ | 9.38 грн |
| SMBJ13CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.2V; 29A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 13V
Breakdown voltage: 15.2V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 908 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.91 грн |
| 24+ | 17.59 грн |
| 27+ | 15.52 грн |
| 31+ | 13.44 грн |
| 100+ | 11.37 грн |
| 125+ | 11.12 грн |
| 250+ | 10.54 грн |
| 500+ | 10.12 грн |
| SMBJ10A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 11.7V; 37A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2230 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.44 грн |
| 26+ | 16.43 грн |
| 28+ | 15.18 грн |
| 50+ | 12.28 грн |
| 100+ | 11.12 грн |
| 250+ | 9.54 грн |
| 500+ | 8.21 грн |
| 1000+ | 7.05 грн |
| 1300+ | 6.64 грн |
| SMBJ26CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30.4V; 14.9A; bidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30.4V
Max. forward impulse current: 14.9A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1556 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.49 грн |
| 19+ | 22.40 грн |
| 25+ | 19.91 грн |
| 100+ | 15.43 грн |
| 250+ | 14.19 грн |
| 500+ | 12.28 грн |
| 1000+ | 9.38 грн |
| STEVAL-POE003V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: PM8804,PM8805; 20A
Interface: Ethernet
Kind of connector: power supply; RJ45 x2
Components: PM8804; PM8805
Additional functions: Power over Ethernet (PoE)
Kit contents: prototype board
Output voltage 3: 5V DC
Output current: 20A
Type of development kit: evaluation
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| STPS20L60CGY-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.74V
Max. load current: 30A
Leakage current: 95mA
Max. forward impulse current: 220A
Kind of package: reel; tape
Application: automotive industry
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| 1N5817 |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 260 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.30 грн |
| 38+ | 11.12 грн |
| 41+ | 10.29 грн |
| 50+ | 8.31 грн |
| 100+ | 7.45 грн |
| SMAJ28CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 31.1V; 39A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 2056 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.87 грн |
| 35+ | 12.03 грн |
| 39+ | 10.70 грн |
| 50+ | 8.96 грн |
| 100+ | 7.88 грн |
| 250+ | 6.80 грн |
| 500+ | 6.14 грн |
| 1000+ | 5.56 грн |
| P6KE10A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 10V; 41A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 41A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
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| 1.5KE12A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; DO201; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
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| STM32F051K8U7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 48MHz; UFQFPN32; 2÷3.6VDC; STM32F0
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 48MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 2...3.6V DC
Interface: HDMI CEC; I2C; SPI; USART x2
Kind of architecture: Cortex M0
Memory: 8kB SRAM; 64kB FLASH
Number of 16bit timers: 7
Number of 32bit timers: 1
Family: STM32F0
Kind of core: 32-bit
Number of 12bit D/A converters: 1
Number of 12bit A/D converters: 13
Operating temperature: -40...105°C
Integrated circuit features: CRC; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of package: reel; tape
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| SMCJ6.0A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 7.05V; 152A; unidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 6V
Breakdown voltage: 7.05V
Max. forward impulse current: 152A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 2mA
Manufacturer series: SMCJ
Kind of package: reel; tape
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| STPS1L60ZF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Leakage current: 21mA
на замовлення 669 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.34 грн |
| 30+ | 13.94 грн |
| 50+ | 9.21 грн |
| 100+ | 7.72 грн |
| 500+ | 6.06 грн |
| STPS1L60ZFY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 60V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. load current: 10A
Max. forward impulse current: 60A
Kind of package: reel; tape
Application: automotive industry
на замовлення 1574 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.34 грн |
| 26+ | 16.43 грн |
| 29+ | 14.77 грн |
| 33+ | 12.69 грн |
| 50+ | 11.28 грн |
| 100+ | 9.87 грн |
| 250+ | 9.13 грн |
| STL10N60M6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 48W; PowerFLAT 5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 48W
Case: PowerFLAT 5x6
On-state resistance: 0.66Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 8.8nC
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| STH180N10F3-2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 125.99 грн |
| STPS3L45AF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA flat; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA flat
Mounting: SMD
Max. off-state voltage: 45V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Leakage current: 135mA
Max. forward impulse current: 75A
Kind of package: reel; tape
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| STM32L073V8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP100; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 84
Case: LQFP100
Supply voltage: 1.8...3.6V DC
Interface: I2C; IrDA; LIN; SPI; UART; USART; USB
Kind of architecture: Cortex M0+
Memory: 20kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
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| STM32F411RCT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller
Type of integrated circuit: STM32 ARM microcontroller
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 160+ | 302.01 грн |
| STTH1002CR |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.70 грн |
| 18+ | 23.48 грн |
| 50+ | 21.74 грн |
| 100+ | 20.74 грн |
| STTH1002CB-TR |
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Виробник: STMicroelectronics
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 8Ax2; 20ns; DPAK; Ufmax: 0.78V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DPAK
Max. forward voltage: 0.78V
Reverse recovery time: 20ns
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| STD110N8F6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; 167W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Power dissipation: 167W
Case: DPAK; TO252
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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| ESDALC6V1P6 |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.1V; 30W; SOT666IP; Ch: 4; ESD
Type of diode: TVS array
Breakdown voltage: 6.1V
Peak pulse power dissipation: 30W
Semiconductor structure: common anode; quadruple; unidirectional
Mounting: SMD
Case: SOT666IP
Max. off-state voltage: 3V
Number of channels: 4
Version: ESD
Leakage current: 0.1µA
на замовлення 2730 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.81 грн |
| 24+ | 17.84 грн |
| 26+ | 16.51 грн |
| 75+ | 11.95 грн |
| 100+ | 11.37 грн |
| 300+ | 9.38 грн |
| 500+ | 8.79 грн |
| 1000+ | 8.05 грн |
| ESDA14V2BP6 | ![]() |
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Виробник: STMicroelectronics
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
Category: Protection diodes - arrays
Description: Diode: TVS array; 14.2V; 50W; SOT666; Ch: 4; reel,tape; ESD
Type of diode: TVS array
Breakdown voltage: 14.2V
Peak pulse power dissipation: 50W
Semiconductor structure: bidirectional; common anode; quadruple
Mounting: SMD
Case: SOT666
Max. off-state voltage: 12V
Number of channels: 4
Version: ESD
Kind of package: reel; tape
Leakage current: 1µA
на замовлення 540 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 33.95 грн |
| 20+ | 20.91 грн |
| 100+ | 13.61 грн |
| 250+ | 11.53 грн |
| 500+ | 10.29 грн |
| SCTH35N65G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTH35N65G2V-7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 45A; Idm: 90A; 208W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 90A
Power dissipation: 208W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 67mΩ
Mounting: SMD
Gate charge: 73nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSV992IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 2; 2.5÷5.5VDC; SO8; 7.5mV
Type of integrated circuit: operational amplifier
Case: SO8
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2489 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 98.29 грн |
| 6+ | 77.16 грн |
| 10+ | 68.87 грн |
| 25+ | 60.57 грн |
| 100+ | 52.27 грн |
| TSV994IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 20MHz; Ch: 4; 2.5÷5.5VDC; TSSOP14; 7.5mV
Type of integrated circuit: operational amplifier
Case: TSSOP14
Mounting: SMT
Integrated circuit features: low voltage; rail-to-rail
Kind of package: reel; tape
Operating temperature: -40...125°C
Input offset current: 0.1nA
Input bias current: 0.1nA
Quiescent current: 1.1mA
Input offset voltage: 7.5mV
Number of channels: 4
Voltage supply range: 2.5...5.5V DC
Slew rate: 10V/μs
Bandwidth: 20MHz
на замовлення 2335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.63 грн |
| 10+ | 76.33 грн |
| 25+ | 71.35 грн |
| STP35N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 17A; 210W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 17A
Power dissipation: 210W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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| STB35N60DM2 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 234.10 грн |
| Z0103MA 2AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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| Z0103MN 6AA4 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
Category: Triacs
Description: Triac; 600V; 1A; SOT223; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: SOT223
Gate current: 3mA
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 8A
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| Z0103NA 2AL2 |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 800V; 1A; TO92; Igt: 3mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 1A
Case: TO92
Gate current: 3mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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| STD13NM60ND |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| M95512-RMN6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1138 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.14 грн |
| 250+ | 41.90 грн |
| 500+ | 39.83 грн |
| 1000+ | 37.17 грн |
| M95512-RDW6TP |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 1019 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.08 грн |
| 10+ | 50.53 грн |
| 100+ | 45.88 грн |
| 500+ | 42.40 грн |
| M95512-RMN6P |
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Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 512kbEEPROM; SPI; 64kx8bit; 1.8÷5.5V; 16MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 512kb EEPROM
Interface: SPI
Memory organisation: 64kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 16MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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| TS912AIDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 4837 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.99 грн |
| 7+ | 66.38 грн |
| 10+ | 59.74 грн |
| 25+ | 52.27 грн |
| 50+ | 48.95 грн |
| 100+ | 45.63 грн |
| 250+ | 42.32 грн |
| 2500+ | 40.66 грн |
| TS912IDT | ![]() |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 3889 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 87.57 грн |
| 7+ | 67.87 грн |
| 10+ | 61.40 грн |
| 25+ | 54.18 грн |
| 50+ | 49.95 грн |
| 100+ | 46.80 грн |
| 250+ | 43.81 грн |
| 2500+ | 39.99 грн |
| TS912BIDT | ![]() |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 2mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.4V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 2mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1502 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.03 грн |
| 6+ | 73.01 грн |
| 10+ | 66.38 грн |
| 25+ | 59.74 грн |
| 75+ | 53.93 грн |
| 100+ | 53.10 грн |
| 250+ | 50.61 грн |
| TS912ID |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: tube
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 1207 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 128.67 грн |
| 5+ | 99.56 грн |
| 10+ | 90.44 грн |
| 25+ | 88.78 грн |
| TS912IYDT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 2; 2.7÷16VDC; SO8; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 1.3V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| TS912AIYDT |
![]() |
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 2; 2.7÷16VDC; SO8; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO8
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.























