Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (162788) > Сторінка 2713 з 2714
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| STM32G0B0CET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 43 Case: LQFP48 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32G0B0RET6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 64MHz Mounting: SMD Number of inputs/outputs: 59 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: I2C x3; SPI x3; USART x6; USB Kind of architecture: Cortex M0+ Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 19 Number of 16bit timers: 9 Family: STM32G0 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
SM6T33CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2336 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T33CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 33V Max. forward impulse current: 13.1A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 22411 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SCTW90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 90A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 30mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SCTH90N65G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 116A Pulsed drain current: 220A Power dissipation: 484W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 27mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTL90N65G2V | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 160A Power dissipation: 935W Case: PowerFLAT 8x8 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: SMD Gate charge: 157nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SCTWA90N65G2V-4 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 119A Pulsed drain current: 220A Power dissipation: 565W Case: HIP247-4 Gate-source voltage: -10...22V On-state resistance: 24mΩ Mounting: THT Gate charge: 157nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STB12NM50T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 550V Drain current: 12A Power dissipation: 160W Case: D2PAK; TO263 On-state resistance: 0.35Ω Mounting: SMD Kind of channel: enhancement Gate charge: 28nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STP46NF30 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Case: TO220-3 Technology: STripFET™ II Gate charge: 90nC On-state resistance: 75mΩ Power dissipation: 300W Gate-source voltage: ±20V Drain current: 27A Pulsed drain current: 168A Drain-source voltage: 300V Polarisation: unipolar Kind of channel: enhancement |
на замовлення 248 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 314 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T36AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STD17NF03LT4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Power dissipation: 30W Case: DPAK Gate-source voltage: ±16V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 3034 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
VNB35N07TR-E | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 25A Number of channels: 1 Mounting: SMD Case: D2PAK On-state resistance: 28mΩ Output voltage: 55V |
на замовлення 1570 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STPS5L60U | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.48V Max. forward impulse current: 90A Kind of package: reel; tape |
на замовлення 738 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STPS5L60UFN | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.52V Max. load current: 15A Leakage current: 100mA Max. forward impulse current: 205A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Mounting: THT Case: TO92 Gate current: 5mA Max. load current: 1A Max. forward impulse current: 8A Max. off-state voltage: 0.6kV Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| Z0107SN 5AA4 | STMicroelectronics |
Category: TriacsDescription: Triac Type of thyristor: triac |
на замовлення 11000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
M95080-WMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SO8 Kind of interface: serial |
на замовлення 1122 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
M95080-DFMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
на замовлення 2483 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| M95080-RMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-DFDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-DFMC6TG | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.7...5.5V Clock frequency: 20MHz Mounting: SMD Case: UFDFPN8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| M95080-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M95080-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| M95080-WDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1024x8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
M95080-WMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: SPI Memory organisation: 1kx8bit Operating voltage: 2.5...5.5V Clock frequency: 20MHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STPS5L40 | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
на замовлення 1160 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STPS3150RL | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 150V Load current: 3A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.82V Max. forward impulse current: 100A Kind of package: reel |
на замовлення 1496 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
PKC-136 | STMicroelectronics |
Category: Diodes - othersDescription: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V Type of diode: TVS+FRD Max. off-state voltage: 700V Case: DO15 Mounting: THT Features of semiconductor devices: snubber diode; ultrafast switching Kind of package: Ammo Pack Leakage current: 10µA Breakdown voltage: 160V |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| L6981N50DR | STMicroelectronics |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
| LSM303AHTR | STMicroelectronics |
Category: Resistive Magnetic SensorsDescription: Sensor: accelerometer; Interface: SPI; -40÷85°C Type of sensor: accelerometer Interface: SPI Operating temperature: -40...85°C |
на замовлення 24000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
Z0405MH | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
на замовлення 129 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STY60NK30Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.5A Power dissipation: 450W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BDX53B | STMicroelectronics |
Category: NPN THT Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 60W Case: TO220AB Mounting: THT Kind of package: tube Current gain: 750 |
на замовлення 409 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: TriacsDescription: Triac; 600V; 1A; TO92; Igt: 7mA Type of thyristor: triac Mounting: THT Case: TO92 Gate current: 7mA Max. load current: 1A Max. off-state voltage: 0.6kV |
на замовлення 8000 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
|
M24C01-RMN6P | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1kb EEPROM Interface: I2C Memory organisation: 128x8bit Operating voltage: 1.8...5.5V Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C Clock frequency: 400kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STP150N10F7 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
на замовлення 51 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
| STP150N10F7AG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 110A Pulsed drain current: 440A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
STP14NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.5A Case: TO220 On-state resistance: 0.5Ω Mounting: THT Power: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
NUCLEO-L4R5ZI | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4 Type of development kit: STM32 Components: STM32L4R5ZIT6 Interface: USB Kind of connector: Morpho plug; pin strips; pin strips; USB B micro Kind of architecture: Cortex M4 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kit contents: base board |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
|
STM32F769IGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 140 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: TRNG Memory: 512kB SRAM; 1MB FLASH Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 12 Number of 32bit timers: 2 Family: STM32F7 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STM32F412CEU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32F412CEU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 100MHz Mounting: SMD Number of inputs/outputs: 36 Case: UFQFPN48 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CR95HF-VMD5T | STMicroelectronics |
Category: Interfaces others - integrated circuitsDescription: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape Type of integrated circuit: NFC/RFID tag Supply voltage: 2.7...5.5V DC Interface: SPI; UART Mounting: SMD Case: VFQFPN32 Operating temperature: -25...85°C Kind of package: reel; tape Frequency: 13.56MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32L412KBU6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STM32L412KBU6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 26 Case: QFN32 Supply voltage: 1.71...3.6V DC Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 40kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 1 Family: STM32L4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BZW50-27B | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: bidirectional Case: R6 Mounting: THT Leakage current: 5µA Kind of package: Ammo Pack |
на замовлення 65 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 4007 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
P6KE30A | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO15 Mounting: THT Leakage current: 0.5µA Kind of package: Ammo Pack |
на замовлення 256 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 5747 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1213 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BZW50-27 | STMicroelectronics |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 27V Breakdown voltage: 30V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: R6 Mounting: THT Leakage current: 5µA Kind of package: reel; tape |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2193 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T30AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2278 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
SM6T30CAY | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
на замовлення 2160 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
BD678 | STMicroelectronics |
Category: PNP THT Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 4A Power dissipation: 40W Case: SOT32 Current gain: 750 Mounting: THT Kind of package: tube |
на замовлення 920 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STF13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
|
STP13N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. |
| STM32G0B0CET6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 43
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32G0B0RET6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 64MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 64MHz
Mounting: SMD
Number of inputs/outputs: 59
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: I2C x3; SPI x3; USART x6; USB
Kind of architecture: Cortex M0+
Integrated circuit features: 12bit ADC; CRC; DMA; PdR; PoR; RTC; watchdog
Memory: 128kB SRAM; 144kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 19
Number of 16bit timers: 9
Family: STM32G0
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| SM6T33CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.38 грн |
| 19+ | 22.90 грн |
| 21+ | 20.41 грн |
| 50+ | 15.43 грн |
| 100+ | 13.61 грн |
| 250+ | 11.45 грн |
| 500+ | 9.87 грн |
| 1000+ | 8.55 грн |
| SM6T33CAY |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33V; 13.1A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 33V
Max. forward impulse current: 13.1A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 22411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.76 грн |
| 43+ | 9.79 грн |
| 100+ | 8.79 грн |
| 250+ | 8.13 грн |
| 500+ | 7.72 грн |
| 1000+ | 7.55 грн |
| SCTW90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 90A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 90A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTH90N65G2V-7 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 116A; Idm: 220A; 484W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 116A
Pulsed drain current: 220A
Power dissipation: 484W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 27mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| SCTL90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 160A; 935W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 935W
Case: PowerFLAT 8x8
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 157nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTWA90N65G2V |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SCTWA90N65G2V-4 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 119A; Idm: 220A; 565W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 119A
Pulsed drain current: 220A
Power dissipation: 565W
Case: HIP247-4
Gate-source voltage: -10...22V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 157nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
товару немає в наявності
В кошику
од. на суму грн.
| STB12NM50T4 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 550V; 12A; 160W; D2PAK,TO263
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 550V
Drain current: 12A
Power dissipation: 160W
Case: D2PAK; TO263
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 28nC
товару немає в наявності
В кошику
од. на суму грн.
| STP46NF30 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 300V; 27A; Idm: 168A
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Case: TO220-3
Technology: STripFET™ II
Gate charge: 90nC
On-state resistance: 75mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
Drain current: 27A
Pulsed drain current: 168A
Drain-source voltage: 300V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.27 грн |
| 10+ | 145.20 грн |
| 50+ | 125.29 грн |
| SM6T36A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 314 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 27+ | 16.98 грн |
| 30+ | 13.86 грн |
| 33+ | 12.94 грн |
| 50+ | 12.11 грн |
| 100+ | 11.28 грн |
| 250+ | 10.37 грн |
| SM6T36AY |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| STD17NF03LT4 |
![]() |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 30W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Power dissipation: 30W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 3034 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 45.57 грн |
| 13+ | 32.28 грн |
| 50+ | 25.47 грн |
| 100+ | 23.07 грн |
| 500+ | 18.59 грн |
| 1000+ | 16.93 грн |
| 2500+ | 15.68 грн |
| VNB35N07TR-E |
![]() |
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 25A; Ch: 1; SMD; D2PAK
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 25A
Number of channels: 1
Mounting: SMD
Case: D2PAK
On-state resistance: 28mΩ
Output voltage: 55V
на замовлення 1570 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 378.86 грн |
| 5+ | 287.91 грн |
| 10+ | 253.06 грн |
| 25+ | 211.58 грн |
| 100+ | 190.83 грн |
| STPS5L60U |
![]() |
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.48V
Max. forward impulse current: 90A
Kind of package: reel; tape
на замовлення 738 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.42 грн |
| 15+ | 29.54 грн |
| 16+ | 26.05 грн |
| 20+ | 22.65 грн |
| 50+ | 18.75 грн |
| 100+ | 16.26 грн |
| 500+ | 13.11 грн |
| STPS5L60UFN |
![]() |
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Max. load current: 15A
Leakage current: 100mA
Max. forward impulse current: 205A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| Z0107MA 2AL2 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 5mA
Max. load current: 1A
Max. forward impulse current: 8A
Max. off-state voltage: 0.6kV
Kind of package: Ammo Pack
товару немає в наявності
В кошику
од. на суму грн.
| Z0107SN 5AA4 |
![]() |
на замовлення 11000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6000+ | 6.08 грн |
| M95080-WMN6P |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; SO8; serial
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
на замовлення 1122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.44 грн |
| 100+ | 17.17 грн |
| 300+ | 16.10 грн |
| 500+ | 15.68 грн |
| 1000+ | 15.10 грн |
| M95080-DFMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
на замовлення 2483 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 36.63 грн |
| 14+ | 29.70 грн |
| 25+ | 27.63 грн |
| 100+ | 24.14 грн |
| 250+ | 20.99 грн |
| 1000+ | 19.75 грн |
| M95080-RMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-DFDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-DFMC6TG |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.7÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.7...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: UFDFPN8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-RDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-RMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-WDW6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 2.5÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1024x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| M95080-WMN6TP |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1kx8bit; 2.5÷5.5V; 20MHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: SPI
Memory organisation: 1kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| STPS5L40 |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
на замовлення 1160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.51 грн |
| 44+ | 9.54 грн |
| 100+ | 7.22 грн |
| STPS3150RL |
![]() |
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 3A; DO201AD; Ufmax: 0.82V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.82V
Max. forward impulse current: 100A
Kind of package: reel
на замовлення 1496 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.70 грн |
| 22+ | 19.58 грн |
| 100+ | 13.86 грн |
| 500+ | 10.95 грн |
| 625+ | 10.62 грн |
| 1000+ | 9.96 грн |
| PKC-136 |
![]() |
Виробник: STMicroelectronics
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
Category: Diodes - others
Description: Diode: TVS+FRD; 700V; DO15; Ammo Pack; 10uA; Ubr: 160V
Type of diode: TVS+FRD
Max. off-state voltage: 700V
Case: DO15
Mounting: THT
Features of semiconductor devices: snubber diode; ultrafast switching
Kind of package: Ammo Pack
Leakage current: 10µA
Breakdown voltage: 160V
на замовлення 352 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 73.27 грн |
| 10+ | 45.72 грн |
| 100+ | 32.44 грн |
| 250+ | 31.45 грн |
| L6981N50DR |
![]() |
Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 102.76 грн |
| LSM303AHTR |
![]() |
Виробник: STMicroelectronics
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
Category: Resistive Magnetic Sensors
Description: Sensor: accelerometer; Interface: SPI; -40÷85°C
Type of sensor: accelerometer
Interface: SPI
Operating temperature: -40...85°C
на замовлення 24000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8000+ | 248.40 грн |
| Z0405MH |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
на замовлення 129 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.21 грн |
| 14+ | 29.70 грн |
| 75+ | 24.06 грн |
| STY60NK30Z |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 899.78 грн |
| BDX53B |
![]() |
Виробник: STMicroelectronics
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 8A; 60W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 60W
Case: TO220AB
Mounting: THT
Kind of package: tube
Current gain: 750
на замовлення 409 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 80.42 грн |
| 10+ | 49.37 грн |
| 50+ | 35.93 грн |
| 100+ | 31.61 грн |
| 250+ | 27.05 грн |
| Z0107MA 2AL2 |
![]() |
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 7mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 7mA
Type of thyristor: triac
Mounting: THT
Case: TO92
Gate current: 7mA
Max. load current: 1A
Max. off-state voltage: 0.6kV
на замовлення 8000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2000+ | 5.63 грн |
| M24C01-RMN6P |
![]() |
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; I2C; 128x8bit; 1.8÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1kb EEPROM
Interface: I2C
Memory organisation: 128x8bit
Operating voltage: 1.8...5.5V
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Clock frequency: 400kHz
товару немає в наявності
В кошику
од. на суму грн.
| STP150N10F7 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 51 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 173.34 грн |
| 5+ | 143.54 грн |
| STP150N10F7AG |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 110A; Idm: 440A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 440A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| STP14NK60Z |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.5A; 160W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.5A
Case: TO220
On-state resistance: 0.5Ω
Mounting: THT
Power: 160W
товару немає в наявності
В кошику
од. на суму грн.
| NUCLEO-L4R5ZI |
![]() |
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32L4R5ZIT6; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32L4R5ZIT6
Interface: USB
Kind of connector: Morpho plug; pin strips; pin strips; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
товару немає в наявності
В кошику
од. на суму грн.
| STM32F769IGT6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 140
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DCMI; I2C x4; I2S x3; QSPI; SDIO; SPI x6; UART x4; USART x4; USB high-speed; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: TRNG
Memory: 512kB SRAM; 1MB FLASH
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 12
Number of 32bit timers: 2
Family: STM32F7
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F412CEU6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32F412CEU6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 100MHz; UFQFPN48; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 100MHz
Mounting: SMD
Number of inputs/outputs: 36
Case: UFQFPN48
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x5; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| CR95HF-VMD5T |
![]() |
Виробник: STMicroelectronics
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
Category: Interfaces others - integrated circuits
Description: IC: NFC/RFID tag; 2.7÷5.5VDC; SPI,UART; SMD; VFQFPN32; reel,tape
Type of integrated circuit: NFC/RFID tag
Supply voltage: 2.7...5.5V DC
Interface: SPI; UART
Mounting: SMD
Case: VFQFPN32
Operating temperature: -25...85°C
Kind of package: reel; tape
Frequency: 13.56MHz
товару немає в наявності
В кошику
од. на суму грн.
| STM32L412KBU6 |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| STM32L412KBU6TR |
![]() |
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; QFN32; 1.71÷3.6VDC; Cmp: 1
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 26
Case: QFN32
Supply voltage: 1.71...3.6V DC
Interface: GPIO; I2C; LPUART; QSPI; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 40kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 1
Family: STM32L4
Kind of core: 32-bit
товару немає в наявності
В кошику
од. на суму грн.
| BZW50-27B |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 30V; 103A; bidirectional; R6; 5kW; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: Ammo Pack
на замовлення 65 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 148.52 грн |
| 10+ | 131.92 грн |
| 25+ | 129.43 грн |
| SM6T30A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 4007 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.30 грн |
| 34+ | 12.45 грн |
| 35+ | 11.86 грн |
| 37+ | 11.45 грн |
| 50+ | 10.87 грн |
| 100+ | 10.45 грн |
| 500+ | 9.46 грн |
| 1000+ | 9.04 грн |
| 2500+ | 8.46 грн |
| P6KE30A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO15
Mounting: THT
Leakage current: 0.5µA
Kind of package: Ammo Pack
на замовлення 256 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.38 грн |
| 18+ | 23.07 грн |
| 21+ | 20.66 грн |
| 50+ | 15.93 грн |
| 100+ | 14.35 грн |
| 250+ | 12.53 грн |
| SM6T30CA | ![]() |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 5747 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.49 грн |
| 23+ | 18.59 грн |
| 28+ | 15.35 грн |
| 50+ | 13.28 грн |
| 100+ | 11.62 грн |
| 250+ | 9.79 грн |
| 500+ | 8.71 грн |
| 1000+ | 7.88 грн |
| 2500+ | 6.97 грн |
| SM15T30A |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1213 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 58.08 грн |
| 10+ | 41.57 грн |
| 50+ | 34.43 грн |
| 100+ | 31.78 грн |
| 250+ | 28.46 грн |
| 500+ | 26.22 грн |
| 1000+ | 24.23 грн |
| BZW50-27 |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 5kW; 30V; 103A; unidirectional; R6; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 27V
Breakdown voltage: 30V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: R6
Mounting: THT
Leakage current: 5µA
Kind of package: reel; tape
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 141.05 грн |
| 10+ | 120.31 грн |
| 25+ | 116.16 грн |
| SM15T30CA |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.29 грн |
| 11+ | 41.24 грн |
| 50+ | 33.77 грн |
| 100+ | 30.95 грн |
| 250+ | 27.46 грн |
| 500+ | 25.14 грн |
| 1000+ | 23.07 грн |
| SM6T30AY |
![]() |
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2278 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 49.14 грн |
| 13+ | 34.02 грн |
| 25+ | 31.45 грн |
| 100+ | 25.39 грн |
| 250+ | 21.32 грн |
| 500+ | 18.75 грн |
| 1000+ | 15.27 грн |
| SM6T30CAY |
![]() |
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 30V; 14.5A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
на замовлення 2160 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 42.89 грн |
| 13+ | 33.52 грн |
| 14+ | 30.12 грн |
| 100+ | 20.24 грн |
| 250+ | 17.26 грн |
| 500+ | 15.35 грн |
| 1000+ | 13.69 грн |
| BD678 |
![]() |
Виробник: STMicroelectronics
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
Category: PNP THT Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 4A; 40W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 4A
Power dissipation: 40W
Case: SOT32
Current gain: 750
Mounting: THT
Kind of package: tube
на замовлення 920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 63.44 грн |
| 13+ | 34.52 грн |
| 50+ | 27.05 грн |
| 100+ | 24.39 грн |
| 200+ | 21.99 грн |
| 500+ | 19.25 грн |
| STF13N80K5 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 279.67 грн |
| 10+ | 170.92 грн |
| STP13N80K5 |
![]() |
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.























