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STB50NF25 STB50NF25 STMicroelectronics en.CD00154006.pdf Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 25 V
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STB75NF75T4 STB75NF75T4 STMicroelectronics ST%28B%2CP%2975NF75%28FP%29.pdf Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+92.61 грн
Мінімальне замовлення: 1000
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STB85NS04Z STB85NS04Z STMicroelectronics en.CD00135201.pdf Description: MOSFET N-CH 33V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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STCF01PMR STCF01PMR STMicroelectronics en.CD00070087.pdf Description: IC LED DRIVER RGLTR 300MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Camera Flash
Current - Output / Channel: 300mA (Flash)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 10-DFN (3x3)
Voltage - Supply (Min): 2.6V
Voltage - Supply (Max): 5.5V
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STCN75M2E STCN75M2E STMicroelectronics en.CD00153589.pdf Description: SENSOR DIGITAL -55C-125C 8SO
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 9 b
Supplier Device Package: 8-SOIC
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±2°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
Part Status: Obsolete
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STCS1APHR STCS1APHR STMicroelectronics en.CD00185793.pdf Description: IC LED DRV LIN PWM POWERSO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-8
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Supplier Device Package: PowerSO-8
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
2500+114.50 грн
5000+108.10 грн
Мінімальне замовлення: 2500
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STCS1APUR STCS1APUR STMicroelectronics en.CD00185793.pdf Description: IC LED DRVR LINEAR PWM 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Supplier Device Package: 8-DFN (3x3)
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+89.77 грн
Мінімальне замовлення: 3000
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STCS2ASPR STCS2ASPR STMicroelectronics STCS2A.pdf Description: IC LED DRVR LIN PWM 2A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 2A
Internal Switch(s): Yes
Supplier Device Package: 10-PowerSO
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
600+124.32 грн
1200+116.42 грн
Мінімальне замовлення: 600
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STD100N3LF3 STD100N3LF3 STMicroelectronics en.CD00151533.pdf Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 1685 шт:
термін постачання 21-31 дні (днів)
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STD10NM65N STD10NM65N STMicroelectronics STx10NM65N.pdf Description: MOSFET N-CH 650V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STD16NF25 STD16NF25 STMicroelectronics en.CD00173646.pdf Description: MOSFET N-CH 250V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+52.23 грн
5000+48.59 грн
Мінімальне замовлення: 2500
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STD17NF25 STD17NF25 STMicroelectronics en.CD00150910.pdf Description: MOSFET N-CH 250V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+40.56 грн
Мінімальне замовлення: 2500
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STD18NF03L STD18NF03L STMicroelectronics en.CD00167213.pdf Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+19.89 грн
Мінімальне замовлення: 2500
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STD26NF10 STD26NF10 STMicroelectronics en.CD00157882.pdf Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+45.49 грн
Мінімальне замовлення: 2500
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STD2805T4 STD2805T4 STMicroelectronics STD2805_Rev1_Jun2007.pdf Description: TRANS PNP 60V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
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STD2NK100Z STD2NK100Z STMicroelectronics std2nk100z.pdf Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+65.93 грн
Мінімальне замовлення: 2500
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STD36NH02L STD36NH02L STMicroelectronics en.CD00107793.pdf Description: MOSFET N-CH 24V 30A DPAK
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STD3NK100Z STD3NK100Z STMicroelectronics en.CD00158273.pdf Description: MOSFET N-CH 1000V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+70.33 грн
Мінімальне замовлення: 2500
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STD40NF10 STD40NF10 STMicroelectronics en.CD00291761.pdf Description: MOSFET N-CH 100V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
2500+39.32 грн
Мінімальне замовлення: 2500
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STD50N03L STD50N03L STMicroelectronics STD50N03L_-1.pdf Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
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STD50N03L-1 STD50N03L-1 STMicroelectronics STD50N03L_-1.pdf Description: MOSFET N-CH 30V 40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
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STD60N3LH5 STD60N3LH5 STMicroelectronics en.CD00174698.pdf Description: MOSFET N-CH 30V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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STD60N55F3 STD60N55F3 STMicroelectronics en.CD00152203.pdf Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STD65N55F3 STD65N55F3 STMicroelectronics en.CD00152204.pdf Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Qualification: AEC-Q101
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STD7NM50N STD7NM50N STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STD7NM50N-1 STD7NM50N-1 STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STD85N3LH5 STD85N3LH5 STMicroelectronics en.CD00168872.pdf Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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STD8NM60N STD8NM60N STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STD8NM60N-1 STD8NM60N-1 STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STD90N03L STD90N03L STMicroelectronics en.CD00143620.pdf Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
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STD90N03L-1 STD90N03L-1 STMicroelectronics en.CD00143620.pdf Description: MOSFET N-CH 30V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
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STD9NM50N STD9NM50N STMicroelectronics en.DM00039035.pdf Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
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STD9NM50N-1 STMicroelectronics STX9NM50N(-1)_Rev1.pdf Description: MOSFET N-CH 500V 7.5A IPAK
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STDS75M2E STDS75M2E STMicroelectronics en.CD00153512.pdf Description: SENSOR DIGITAL -55C-125C 8SO
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STF10NM65N STF10NM65N STMicroelectronics en.CD00174879.pdf Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STF12NM60N STF12NM60N STMicroelectronics STx12NM60N(-1).pdf Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STF13NM50N STF13NM50N STMicroelectronics STB,STF,STP,STW13NM50N.pdf Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STF15NM60N STF15NM60N STMicroelectronics en.CD00156434.pdf Description: MOSFET N-CH 600V 14A TO220FP
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STF16NF25 STF16NF25 STMicroelectronics en.CD00173646.pdf Description: MOSFET N-CH 250V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
2+215.27 грн
50+103.41 грн
Мінімальне замовлення: 2
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STF16NM50N STF16NM50N STMicroelectronics STx16NM50N.pdf Description: MOSFET N-CH 500V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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STF17NF25 STF17NF25 STMicroelectronics STx17NF25_Rev1.pdf Description: MOSFET N-CH 250V 17A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STF19NF20 STF19NF20 STMicroelectronics en.CD00142659.pdf Description: MOSFET N-CH 200V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)
3+122.78 грн
50+46.21 грн
100+45.69 грн
500+40.03 грн
1000+36.63 грн
Мінімальне замовлення: 3
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STF23NM60N STF23NM60N STMicroelectronics en.CD00169816.pdf Description: MOSFET N-CH 600V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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STF3NK100Z STF3NK100Z STMicroelectronics en.CD00158273.pdf Description: MOSFET N-CH 1000V 2.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
1+376.53 грн
50+187.67 грн
100+170.77 грн
500+132.48 грн
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STF7NM50N STF7NM50N STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STF8NM60N STF8NM60N STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STF9NM50N STF9NM50N STMicroelectronics STX9NM50N(-1)_Rev1.pdf Description: MOSFET N-CH 500V 7.5A TO-220FP
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
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STG3159DTR STMicroelectronics en.CD00146989.pdf Description: IC SWITCH SPDT X 1 1.1OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 150MHz
Supplier Device Package: 6-DFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 33pC
Crosstalk: -80dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 23ns, 21ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
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STG3384DTR STMicroelectronics CD00145135.pdf Description: IC SWITCH DUAL SPST 10TDFN
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STG4259BJR STMicroelectronics en.CD00143982.pdf Description: IC SW SPDTX2 300MOHM 11FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 11-WFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 11-FlipChip
Voltage - Supply, Single (V+): 1.65V ~ 4.8V
Charge Injection: 103pC
Crosstalk: -93dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3mOhm
Switch Time (Ton, Toff) (Max): 38ns, 17ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 2
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STGB8NC60KDT4 STGB8NC60KDT4 STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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STGB8NC60KT4 STGB8NC60KT4 STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
товару немає в наявності
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STGBL6NC60DT4 STGBL6NC60DT4 STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 14A 56W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
товару немає в наявності
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STGD8NC60KDT4 STGD8NC60KDT4 STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A 62W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
товару немає в наявності
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STGD8NC60KT4 STGD8NC60KT4 STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A 62W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
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STGDL6NC60DT4 STGDL6NC60DT4 STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 13A 50W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 50 W
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STGF8NC60KD STGF8NC60KD STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 7A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 24 W
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STGFL6NC60D STGFL6NC60D STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 7A 22W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 22 W
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STGP8NC60K STGP8NC60K STMicroelectronics en.CD00171951.pdf Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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STGP8NC60KD STGP8NC60KD STMicroelectronics en.CD00171973.pdf Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
3+160.43 грн
50+74.79 грн
100+66.97 грн
500+49.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB50NF25 en.CD00154006.pdf
STB50NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 45A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 25 V
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STB75NF75T4 ST%28B%2CP%2975NF75%28FP%29.pdf
STB75NF75T4
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+92.61 грн
Мінімальне замовлення: 1000
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STB85NS04Z en.CD00135201.pdf
STB85NS04Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 33V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V
Power Dissipation (Max): 215W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 33 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
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STCF01PMR en.CD00070087.pdf
STCF01PMR
Виробник: STMicroelectronics
Description: IC LED DRIVER RGLTR 300MA 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Voltage - Output: 17V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 1.5MHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Camera Flash
Current - Output / Channel: 300mA (Flash)
Internal Switch(s): Yes
Topology: Step-Up (Boost)
Supplier Device Package: 10-DFN (3x3)
Voltage - Supply (Min): 2.6V
Voltage - Supply (Max): 5.5V
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STCN75M2E en.CD00153589.pdf
STCN75M2E
Виробник: STMicroelectronics
Description: SENSOR DIGITAL -55C-125C 8SO
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 9 b
Supplier Device Package: 8-SOIC
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±2°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
Part Status: Obsolete
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STCS1APHR en.CD00185793.pdf
STCS1APHR
Виробник: STMicroelectronics
Description: IC LED DRV LIN PWM POWERSO-8
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-8
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Supplier Device Package: PowerSO-8
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+114.50 грн
5000+108.10 грн
Мінімальне замовлення: 2500
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STCS1APUR en.CD00185793.pdf
STCS1APUR
Виробник: STMicroelectronics
Description: IC LED DRVR LINEAR PWM 1.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output / Channel: 1.5A
Internal Switch(s): Yes
Supplier Device Package: 8-DFN (3x3)
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+89.77 грн
Мінімальне замовлення: 3000
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STCS2ASPR STCS2A.pdf
STCS2ASPR
Виробник: STMicroelectronics
Description: IC LED DRVR LIN PWM 2A 10POWERSO
Packaging: Tape & Reel (TR)
Package / Case: PowerSO-10 Exposed Bottom Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output / Channel: 2A
Internal Switch(s): Yes
Supplier Device Package: 10-PowerSO
Dimming: PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 40V
Part Status: Active
на замовлення 1200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
600+124.32 грн
1200+116.42 грн
Мінімальне замовлення: 600
В кошику  од. на суму  грн.
STD100N3LF3 en.CD00151533.pdf
STD100N3LF3
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
на замовлення 1685 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STD10NM65N STx10NM65N.pdf
STD10NM65N
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STD16NF25 en.CD00173646.pdf
STD16NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 14A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+52.23 грн
5000+48.59 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD17NF25 en.CD00150910.pdf
STD17NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+40.56 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD18NF03L en.CD00167213.pdf
STD18NF03L
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+19.89 грн
Мінімальне замовлення: 2500
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STD26NF10 en.CD00157882.pdf
STD26NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 25A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 12.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+45.49 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD2805T4 STD2805_Rev1_Jun2007.pdf
STD2805T4
Виробник: STMicroelectronics
Description: TRANS PNP 60V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 15 W
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STD2NK100Z std2nk100z.pdf
STD2NK100Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 1.85A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.85A (Tc)
Rds On (Max) @ Id, Vgs: 8.5Ohm @ 900mA, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 499 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+65.93 грн
Мінімальне замовлення: 2500
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STD36NH02L en.CD00107793.pdf
STD36NH02L
Виробник: STMicroelectronics
Description: MOSFET N-CH 24V 30A DPAK
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STD3NK100Z en.CD00158273.pdf
STD3NK100Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+70.33 грн
Мінімальне замовлення: 2500
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STD40NF10 en.CD00291761.pdf
STD40NF10
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+39.32 грн
Мінімальне замовлення: 2500
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STD50N03L STD50N03L_-1.pdf
STD50N03L
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 40A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
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STD50N03L-1 STD50N03L_-1.pdf
STD50N03L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 40A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1434 pF @ 25 V
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STD60N3LH5 en.CD00174698.pdf
STD60N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
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STD60N55F3 en.CD00152203.pdf
STD60N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STD65N55F3 en.CD00152204.pdf
STD65N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Qualification: AEC-Q101
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STD7NM50N STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STD7NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STD7NM50N-1 STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STD7NM50N-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STD85N3LH5 en.CD00168872.pdf
STD85N3LH5
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
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STD8NM60N en.CD00155842.pdf
STD8NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STD8NM60N-1 en.CD00155842.pdf
STD8NM60N-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STD90N03L en.CD00143620.pdf
STD90N03L
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
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STD90N03L-1 en.CD00143620.pdf
STD90N03L-1
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 40A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 25 V
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STD9NM50N en.DM00039035.pdf
STD9NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
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STD9NM50N-1 STX9NM50N(-1)_Rev1.pdf
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A IPAK
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STDS75M2E en.CD00153512.pdf
STDS75M2E
Виробник: STMicroelectronics
Description: SENSOR DIGITAL -55C-125C 8SO
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STF10NM65N en.CD00174879.pdf
STF10NM65N
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STF12NM60N STx12NM60N(-1).pdf
STF12NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STF13NM50N STB,STF,STP,STW13NM50N.pdf
STF13NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STF15NM60N en.CD00156434.pdf
STF15NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220FP
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STF16NF25 en.CD00173646.pdf
STF16NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
на замовлення 58 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+215.27 грн
50+103.41 грн
Мінімальне замовлення: 2
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STF16NM50N STx16NM50N.pdf
STF16NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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STF17NF25 STx17NF25_Rev1.pdf
STF17NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STF19NF20 en.CD00142659.pdf
STF19NF20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 15A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.78 грн
50+46.21 грн
100+45.69 грн
500+40.03 грн
1000+36.63 грн
Мінімальне замовлення: 3
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STF23NM60N en.CD00169816.pdf
STF23NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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STF3NK100Z en.CD00158273.pdf
STF3NK100Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 2.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
на замовлення 670 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+376.53 грн
50+187.67 грн
100+170.77 грн
500+132.48 грн
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STF7NM50N STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STF7NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
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STF8NM60N en.CD00155842.pdf
STF8NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STF9NM50N STX9NM50N(-1)_Rev1.pdf
STF9NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 7.5A TO-220FP
на замовлення 581 шт:
термін постачання 21-31 дні (днів)
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STG3159DTR en.CD00146989.pdf
Виробник: STMicroelectronics
Description: IC SWITCH SPDT X 1 1.1OHM 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 1.1Ohm
-3db Bandwidth: 150MHz
Supplier Device Package: 6-DFN (1.2x1)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Charge Injection: 33pC
Crosstalk: -80dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 50mOhm
Switch Time (Ton, Toff) (Max): 23ns, 21ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 20nA
Number of Circuits: 1
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STG3384DTR CD00145135.pdf
Виробник: STMicroelectronics
Description: IC SWITCH DUAL SPST 10TDFN
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STG4259BJR en.CD00143982.pdf
Виробник: STMicroelectronics
Description: IC SW SPDTX2 300MOHM 11FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 11-WFBGA, FCBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 300mOhm
-3db Bandwidth: 40MHz
Supplier Device Package: 11-FlipChip
Voltage - Supply, Single (V+): 1.65V ~ 4.8V
Charge Injection: 103pC
Crosstalk: -93dB @ 100kHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 3mOhm
Switch Time (Ton, Toff) (Max): 38ns, 17ns
Channel Capacitance (CS(off), CD(off)): 30pF
Current - Leakage (IS(off)) (Max): 20nA
Part Status: Obsolete
Number of Circuits: 2
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STGB8NC60KDT4 en.CD00171973.pdf
STGB8NC60KDT4
Виробник: STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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STGB8NC60KT4 en.CD00171951.pdf
STGB8NC60KT4
Виробник: STMicroelectronics
Description: IGBT 600V 15A 65W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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STGBL6NC60DT4 en.CD00166643.pdf
STGBL6NC60DT4
Виробник: STMicroelectronics
Description: IGBT 600V 14A 56W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
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STGD8NC60KDT4 en.CD00171973.pdf
STGD8NC60KDT4
Виробник: STMicroelectronics
Description: IGBT 600V 15A 62W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
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STGD8NC60KT4 en.CD00171951.pdf
STGD8NC60KT4
Виробник: STMicroelectronics
Description: IGBT 600V 15A 62W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
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STGDL6NC60DT4 en.CD00166643.pdf
STGDL6NC60DT4
Виробник: STMicroelectronics
Description: IGBT 600V 13A 50W DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 50 W
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STGF8NC60KD en.CD00171973.pdf
STGF8NC60KD
Виробник: STMicroelectronics
Description: IGBT 600V 7A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 24 W
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STGFL6NC60D en.CD00166643.pdf
STGFL6NC60D
Виробник: STMicroelectronics
Description: IGBT 600V 7A 22W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220FP
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 22 W
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STGP8NC60K en.CD00171951.pdf
STGP8NC60K
Виробник: STMicroelectronics
Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
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STGP8NC60KD en.CD00171973.pdf
STGP8NC60KD
Виробник: STMicroelectronics
Description: IGBT 600V 15A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 23.5 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 17ns/72ns
Switching Energy: 55µJ (on), 85µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 65 W
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+160.43 грн
50+74.79 грн
100+66.97 грн
500+49.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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