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STGPL6NC60D STGPL6NC60D STMicroelectronics en.CD00166643.pdf Description: IGBT 600V 14A 56W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
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STGW19NC60WD STGW19NC60WD STMicroelectronics stgp19nc60wd.pdf Description: IGBT 600V 42A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
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STGW30N90D STGW30N90D STMicroelectronics Description: IGBT 900V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 900V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 220 W
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STGW30NC60KD STGW30NC60KD STMicroelectronics en.CD00175352.pdf Description: IGBT 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/120ns
Switching Energy: 350µJ (on), 435µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 200 W
на замовлення 625 шт:
термін постачання 21-31 дні (днів)
1+580.34 грн
30+325.19 грн
120+273.85 грн
510+226.64 грн
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STGW35NC120HD STGW35NC120HD STMicroelectronics STGW35NC120HD.pdf Description: IGBT 1200V 60A 235W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 235 W
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STGW35NC60WD STGW35NC60WD STMicroelectronics STGW35NC60WD.pdf Description: IGBT 600V 70A 260W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29.5ns/118ns
Switching Energy: 305µJ (on), 181µJ (off)
Test Condition: 390V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 260 W
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STGY50NC60WD STGY50NC60WD STMicroelectronics STGY50NC60WD.pdf Description: IGBT 600V 110A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 52ns/240ns
Switching Energy: 365µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 278 W
на замовлення 507 шт:
термін постачання 21-31 дні (днів)
1+925.76 грн
30+692.79 грн
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STI15NM60N STI15NM60N STMicroelectronics en.CD00156434.pdf Description: MOSFET N-CH 600V 14A I2PAK
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STI16NM50N STI16NM50N STMicroelectronics en.CD00171994.pdf Description: MOSFET N-CH 500V 15A I2PAK
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STI17NF25 STI17NF25 STMicroelectronics STx17NF25_Rev1.pdf Description: MOSFET N-CH 250V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STI23NM60N STI23NM60N STMicroelectronics en.CD00169816.pdf Description: MOSFET N-CH 600V 19A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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STL6NM60N STL6NM60N STMicroelectronics en.CD00157475.pdf Description: MOSFET N-CH 600V 5.75A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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STLM75M2E STLM75M2E STMicroelectronics en.CD00153511.pdf Description: SENSOR DIGITAL -55C-125C 8SO
Packaging: Tube
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 9 b
Supplier Device Package: 8-SOIC
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±2°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
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STM32F101T6U6 STM32F101T6U6 STMicroelectronics en.CD00210837.pdf Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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STM32F103T6U6 STM32F103T6U6 STMicroelectronics en.CD00210843.pdf Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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STM32F103T8U6 STM32F103T8U6 STMicroelectronics STM32F103x8%2CB.pdf description Description: IC MCU 32BIT 64KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
1+429.73 грн
10+317.42 грн
25+293.31 грн
100+250.39 грн
490+231.59 грн
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STMPE2403TBR STMPE2403TBR STMicroelectronics en.CD00162378.pdf Description: IC XPNDR 400KHZ I2C 36TFBGA
Packaging: Tape & Reel (TR)
Features: Keypad Controller, POR, PWM
Package / Case: 36-TFBGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 36-TFBGA (3.5x3.5)
DigiKey Programmable: Not Verified
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STN951 STN951 STMicroelectronics en.CD00146333.pdf Description: TRANS PNP 60V 5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.6 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1000+23.52 грн
2000+20.65 грн
3000+19.63 грн
5000+17.34 грн
Мінімальне замовлення: 1000
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STP04CM05B1R STP04CM05B1R STMicroelectronics en.CD00177556.pdf Description: IC LED DRIVER LINEAR 400MA 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Voltage - Output: 19V
Mounting Type: Through Hole
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 14-DIP
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
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STP04CM05MTR STP04CM05MTR STMicroelectronics en.CD00177556.pdf Description: IC LED DRIVER LINEAR 400MA 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 14-SO
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
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STP04CM05XTTR STP04CM05XTTR STMicroelectronics en.CD00177556.pdf Description: IC LED DRVR LIN 400MA 16HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-HTSSOP
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
Part Status: Active
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STP10NM65N STP10NM65N STMicroelectronics en.CD00174879.pdf Description: MOSFET N-CH 650V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
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STP120NH03L STP120NH03L STMicroelectronics STx120NH03L.pdf Description: MOSFET N-CH 30V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
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STP12NM60N STP12NM60N STMicroelectronics STx12NM60N(-1).pdf Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STP13NK50Z STP13NK50Z STMicroelectronics en.CD00167960.pdf Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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STP13NM50N STP13NM50N STMicroelectronics STB%2CSTF%2CSTP%2CSTW13NM50N.pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
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STP15NM60N STP15NM60N STMicroelectronics en.CD00156434.pdf Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
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STP160N75F3 STP160N75F3 STMicroelectronics en.CD00151535.pdf Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP16NF25 STP16NF25 STMicroelectronics en.CD00173646.pdf Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP16NM50N STP16NM50N STMicroelectronics STx16NM50N.pdf Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP17NF25 STP17NF25 STMicroelectronics stp17nf25.pdf Description: MOSFET N-CH 250V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 418 шт:
термін постачання 21-31 дні (днів)
3+136.70 грн
50+60.38 грн
100+56.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP180N55F3 STP180N55F3 STMicroelectronics STx180N55F3_Rev2_Jun2007.pdf Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP185N55F3 STP185N55F3 STMicroelectronics en.CD00151392.pdf Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)
1+462.47 грн
10+373.62 грн
100+302.24 грн
500+252.13 грн
1000+215.88 грн
В кошику  од. на суму  грн.
STP19NF20 STP19NF20 STMicroelectronics en.CD00142659.pdf description Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)
6+54.84 грн
50+45.13 грн
100+44.72 грн
500+40.03 грн
1000+36.57 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
STP23NM60N STP23NM60N STMicroelectronics en.CD00169816.pdf Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP300NH02L STP300NH02L STMicroelectronics en.CD00152783.pdf Description: MOSFET N-CH 24V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 109.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7055 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
STP30NM30N STP30NM30N STMicroelectronics STP30NM30N.pdf Description: MOSFET N-CH 300V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP3NK100Z STP3NK100Z STMicroelectronics en.CD00158273.pdf Description: MOSFET N-CH 1000V 2.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP50NF25 STP50NF25 STMicroelectronics en.CD00154006.pdf Description: MOSFET N-CH 250V 45A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 25 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
2+251.29 грн
50+116.18 грн
100+109.96 грн
500+84.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP60N55F3 STP60N55F3 STMicroelectronics en.CD00152203.pdf Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP60NH2LL STP60NH2LL STMicroelectronics STP60NH2LL.pdf Description: MOSFET N-CH 24V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP6NM60N STP6NM60N STMicroelectronics en.CD00157375.pdf Description: MOSFET N-CH 600V 4.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP7NM50N STP7NM50N STMicroelectronics STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP8NM60N STP8NM60N STMicroelectronics en.CD00155842.pdf Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STP90N4F3 STP90N4F3 STMicroelectronics en.CD00177924.pdf Description: MOSFET N-CH 40V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP95N4F3 STP95N4F3 STMicroelectronics en.CD00153132.pdf Description: MOSFET N-CH 40V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
STP9NM50N STP9NM50N STMicroelectronics STX9NM50N%28-1%29_Rev1.pdf Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.7A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS10170CR STPS10170CR STMicroelectronics en.CD00124387.pdf Description: DIODE ARRAY SCHOTTKY 170V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 170 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS10H100CG-TR STPS10H100CG-TR STMicroelectronics STPS10H100CT%2CCG%2CCR%2CCFP.pdf Description: DIODE ARR SCHOTT 100V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+40.27 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STPS1545R STPS1545R STMicroelectronics en.CD00000819.pdf Description: DIODE SCHOTTKY 45V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
товару немає в наявності
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STPS15H100CH STPS15H100CH STMicroelectronics en.CD00002831.pdf Description: DIODE ARR SCHOTT 100V 7.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: I-PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STPS1L20MF STPS1L20MF STMicroelectronics en.CD00130925.pdf Description: DIODE SCHOTT 20V 1A STMITE FLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
товару немає в наявності
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STPS1L30MF STPS1L30MF STMicroelectronics en.CD00130926.pdf Description: DIODE SCHOTTK 30V 1A STMITE FLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 390 µA @ 30 V
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STPS20120CFP STPS20120CFP STMicroelectronics STPS20120C_Rev_3.pdf Description: DIODE ARR SCHOT 120V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 120 V
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STPS2545CG-TR STPS2545CG-TR STMicroelectronics en.CD00002929.pdf Description: DIODE ARR SCHOTT 45V 12.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 125 µA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+35.77 грн
2000+30.97 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STPS2H100UF STPS2H100UF STMicroelectronics en.CD00001548.pdf Description: DIODE SCHOTTKY 100V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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STPS2L25UF STPS2L25UF STMicroelectronics en.CD00001325.pdf Description: DIODE SCHOTTKY 25V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 25 V
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STPS2L30UF STPS2L30UF STMicroelectronics en.CD00001633.pdf Description: DIODE SCHOTTKY 30V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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STPS2L40UF STPS2L40UF STMicroelectronics en.CD00002299.pdf Description: DIODE SCHOTTKY 40V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 4463 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STPS30100ST STPS30100ST STMicroelectronics en.CD00151052.pdf Description: DIODE SCHOTTKY 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
на замовлення 3135 шт:
термін постачання 21-31 дні (днів)
7+54.02 грн
50+37.88 грн
100+37.52 грн
500+33.33 грн
1000+32.69 грн
2000+31.64 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STGPL6NC60D en.CD00166643.pdf
STGPL6NC60D
Виробник: STMicroelectronics
Description: IGBT 600V 14A 56W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 6.7ns/46ns
Switching Energy: 46.5µJ (on), 23.5µJ (off)
Test Condition: 390V, 3A, 10Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 56 W
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STGW19NC60WD stgp19nc60wd.pdf
STGW19NC60WD
Виробник: STMicroelectronics
Description: IGBT 600V 42A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 42 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 125 W
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STGW30N90D
STGW30N90D
Виробник: STMicroelectronics
Description: IGBT 900V 60A 220W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 900V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 220 W
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STGW30NC60KD en.CD00175352.pdf
STGW30NC60KD
Виробник: STMicroelectronics
Description: IGBT 600V 60A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/120ns
Switching Energy: 350µJ (on), 435µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 96 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 125 A
Power - Max: 200 W
на замовлення 625 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+580.34 грн
30+325.19 грн
120+273.85 грн
510+226.64 грн
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STGW35NC120HD STGW35NC120HD.pdf
STGW35NC120HD
Виробник: STMicroelectronics
Description: IGBT 1200V 60A 235W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 152 ns
Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29ns/275ns
Switching Energy: 1.66mJ (on), 4.44mJ (off)
Test Condition: 960V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 135 A
Power - Max: 235 W
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STGW35NC60WD STGW35NC60WD.pdf
STGW35NC60WD
Виробник: STMicroelectronics
Description: IGBT 600V 70A 260W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: 29.5ns/118ns
Switching Energy: 305µJ (on), 181µJ (off)
Test Condition: 390V, 20A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 260 W
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STGY50NC60WD STGY50NC60WD.pdf
STGY50NC60WD
Виробник: STMicroelectronics
Description: IGBT 600V 110A MAX247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 55 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: MAX247™
Td (on/off) @ 25°C: 52ns/240ns
Switching Energy: 365µJ (on), 560µJ (off)
Test Condition: 390V, 40A, 10Ohm, 15V
Gate Charge: 195 nC
Current - Collector (Ic) (Max): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 278 W
на замовлення 507 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+925.76 грн
30+692.79 грн
В кошику  од. на суму  грн.
STI15NM60N en.CD00156434.pdf
STI15NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A I2PAK
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STI16NM50N en.CD00171994.pdf
STI16NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 15A I2PAK
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STI17NF25 STx17NF25_Rev1.pdf
STI17NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
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STI23NM60N en.CD00169816.pdf
STI23NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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STL6NM60N en.CD00157475.pdf
STL6NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.75A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.75A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
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STLM75M2E en.CD00153511.pdf
STLM75M2E
Виробник: STMicroelectronics
Description: SENSOR DIGITAL -55C-125C 8SO
Packaging: Tube
Features: Output Switch, Programmable Limit, Shutdown Mode, Standby Mode
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: I2C/SMBus
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Digital, Local
Resolution: 9 b
Supplier Device Package: 8-SOIC
Test Condition: -25°C ~ 100°C (-55°C ~ 125°C)
Accuracy - Highest (Lowest): ±2°C (±3°C)
Sensing Temperature - Local: -55°C ~ 125°C
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STM32F101T6U6 en.CD00210837.pdf
STM32F101T6U6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 36MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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STM32F103T6U6 en.CD00210843.pdf
STM32F103T6U6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 10K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Obsolete
Number of I/O: 26
DigiKey Programmable: Not Verified
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STM32F103T8U6 description STM32F103x8%2CB.pdf
STM32F103T8U6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 36VFQFPN
Packaging: Tray
Package / Case: 36-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 10x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART, USB
Peripherals: DMA, Motor Control PWM, PDR, POR, PVD, PWM, Temp Sensor, WDT
Supplier Device Package: 36-VFQFPN (6x6)
Part Status: Active
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 816 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.73 грн
10+317.42 грн
25+293.31 грн
100+250.39 грн
490+231.59 грн
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STMPE2403TBR en.CD00162378.pdf
STMPE2403TBR
Виробник: STMicroelectronics
Description: IC XPNDR 400KHZ I2C 36TFBGA
Packaging: Tape & Reel (TR)
Features: Keypad Controller, POR, PWM
Package / Case: 36-TFBGA
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 1.95V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 36-TFBGA (3.5x3.5)
DigiKey Programmable: Not Verified
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STN951 en.CD00146333.pdf
STN951
Виробник: STMicroelectronics
Description: TRANS PNP 60V 5A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.6 W
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+23.52 грн
2000+20.65 грн
3000+19.63 грн
5000+17.34 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STP04CM05B1R en.CD00177556.pdf
STP04CM05B1R
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 400MA 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Voltage - Output: 19V
Mounting Type: Through Hole
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 14-DIP
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
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STP04CM05MTR en.CD00177556.pdf
STP04CM05MTR
Виробник: STMicroelectronics
Description: IC LED DRIVER LINEAR 400MA 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 14-SO
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
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STP04CM05XTTR en.CD00177556.pdf
STP04CM05XTTR
Виробник: STMicroelectronics
Description: IC LED DRVR LIN 400MA 16HTSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width) Exposed Pad
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 4
Frequency: 30MHz
Type: Linear
Operating Temperature: -40°C ~ 125°C (TA)
Current - Output / Channel: 400mA
Internal Switch(s): Yes
Topology: Shift Register
Supplier Device Package: 16-HTSSOP
Voltage - Supply (Min): 3.3V
Voltage - Supply (Max): 5.5V
Part Status: Active
товару немає в наявності
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STP10NM65N en.CD00174879.pdf
STP10NM65N
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 9A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 4.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
товару немає в наявності
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STP120NH03L STx120NH03L.pdf
STP120NH03L
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
товару немає в наявності
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STP12NM60N STx12NM60N(-1).pdf
STP12NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 410mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
товару немає в наявності
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STP13NK50Z en.CD00167960.pdf
STP13NK50Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 11A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 6.5A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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STP13NM50N STB%2CSTF%2CSTP%2CSTW13NM50N.pdf
STP13NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 50 V
товару немає в наявності
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STP15NM60N en.CD00156434.pdf
STP15NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
товару немає в наявності
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STP160N75F3 en.CD00151535.pdf
STP160N75F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 25 V
товару немає в наявності
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STP16NF25 en.CD00173646.pdf
STP16NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 14A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 235mOhm @ 6.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
товару немає в наявності
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STP16NM50N STx16NM50N.pdf
STP16NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 50 V
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STP17NF25 stp17nf25.pdf
STP17NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 8.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
на замовлення 418 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.70 грн
50+60.38 грн
100+56.73 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STP180N55F3 STx180N55F3_Rev2_Jun2007.pdf
STP180N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
товару немає в наявності
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STP185N55F3 en.CD00151392.pdf
STP185N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 60A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1995 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+462.47 грн
10+373.62 грн
100+302.24 грн
500+252.13 грн
1000+215.88 грн
В кошику  од. на суму  грн.
STP19NF20 description en.CD00142659.pdf
STP19NF20
Виробник: STMicroelectronics
Description: MOSFET N-CH 200V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 7.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
на замовлення 1730 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.84 грн
50+45.13 грн
100+44.72 грн
500+40.03 грн
1000+36.57 грн
Мінімальне замовлення: 6
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STP23NM60N en.CD00169816.pdf
STP23NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 19A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 50 V
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STP300NH02L en.CD00152783.pdf
STP300NH02L
Виробник: STMicroelectronics
Description: MOSFET N-CH 24V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 109.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7055 pF @ 15 V
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STP30NM30N STP30NM30N.pdf
STP30NM30N
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 15A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
товару немає в наявності
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STP3NK100Z en.CD00158273.pdf
STP3NK100Z
Виробник: STMicroelectronics
Description: MOSFET N-CH 1000V 2.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 1.25A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 601 pF @ 25 V
товару немає в наявності
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STP50NF25 en.CD00154006.pdf
STP50NF25
Виробник: STMicroelectronics
Description: MOSFET N-CH 250V 45A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 22A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 68.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 25 V
на замовлення 685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+251.29 грн
50+116.18 грн
100+109.96 грн
500+84.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP60N55F3 en.CD00152203.pdf
STP60N55F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
товару немає в наявності
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STP60NH2LL STP60NH2LL.pdf
STP60NH2LL
Виробник: STMicroelectronics
Description: MOSFET N-CH 24V 40A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 25 V
товару немає в наявності
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STP6NM60N en.CD00157375.pdf
STP6NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
товару немає в наявності
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STP7NM50N STD7NM50N_-1_STF_P7NM50N_Rev_1.pdf
STP7NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 780mOhm @ 2.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 50 V
товару немає в наявності
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STP8NM60N en.CD00155842.pdf
STP8NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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STP90N4F3 en.CD00177924.pdf
STP90N4F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STP95N4F3 en.CD00153132.pdf
STP95N4F3
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
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STP9NM50N STX9NM50N%28-1%29_Rev1.pdf
STP9NM50N
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 3.7A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 50 V
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STPS10170CR en.CD00124387.pdf
STPS10170CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 170V I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 170 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 5 A
Current - Reverse Leakage @ Vr: 10 µA @ 170 V
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STPS10H100CG-TR STPS10H100CT%2CCG%2CCR%2CCFP.pdf
STPS10H100CG-TR
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 3.5 µA @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+40.27 грн
Мінімальне замовлення: 1000
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STPS1545R en.CD00000819.pdf
STPS1545R
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 45V 15A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 15A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
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STPS15H100CH en.CD00002831.pdf
STPS15H100CH
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 100V 7.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 7.5A
Supplier Device Package: I-PAK
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 3 µA @ 100 V
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STPS1L20MF en.CD00130925.pdf
STPS1L20MF
Виробник: STMicroelectronics
Description: DIODE SCHOTT 20V 1A STMITE FLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 1 A
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
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STPS1L30MF en.CD00130926.pdf
STPS1L30MF
Виробник: STMicroelectronics
Description: DIODE SCHOTTK 30V 1A STMITE FLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-222AA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: STmite Flat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 390 mV @ 1 A
Current - Reverse Leakage @ Vr: 390 µA @ 30 V
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STPS20120CFP STPS20120C_Rev_3.pdf
STPS20120CFP
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 120V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 120 V
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STPS2545CG-TR en.CD00002929.pdf
STPS2545CG-TR
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 45V 12.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 12.5A
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 12.5 A
Current - Reverse Leakage @ Vr: 125 µA @ 45 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+35.77 грн
2000+30.97 грн
Мінімальне замовлення: 1000
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STPS2H100UF en.CD00001548.pdf
STPS2H100UF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
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STPS2L25UF en.CD00001325.pdf
STPS2L25UF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 25V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 90 µA @ 25 V
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STPS2L30UF en.CD00001633.pdf
STPS2L30UF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 30V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
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STPS2L40UF en.CD00002299.pdf
STPS2L40UF
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 40V 2A SMBFLAT
Packaging: Tape & Reel (TR)
Package / Case: DO-221AA, SMB Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SMBflat
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
Current - Reverse Leakage @ Vr: 220 µA @ 40 V
на замовлення 4463 шт:
термін постачання 21-31 дні (днів)
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STPS30100ST en.CD00151052.pdf
STPS30100ST
Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 100V 30A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 30 A
Current - Reverse Leakage @ Vr: 175 µA @ 100 V
на замовлення 3135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+54.02 грн
50+37.88 грн
100+37.52 грн
500+33.33 грн
1000+32.69 грн
2000+31.64 грн
Мінімальне замовлення: 7
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