Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (124282) > Сторінка 2069 з 2072
| Фото | Назва | Виробник | Інформація |
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STF10NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 19nC Pulsed drain current: 32A |
на замовлення 160 шт: термін постачання 14-30 дні (днів) |
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STW48NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Power dissipation: 330W Case: TO247 Gate-source voltage: ±25V On-state resistance: 55mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 61 шт: термін постачання 14-30 дні (днів) |
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STD10NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2037 шт: термін постачання 14-30 дні (днів) |
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STF22NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 72 шт: термін постачання 14-30 дні (днів) |
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STP11NM60 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 160W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 44A |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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STW34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 305 шт: термін постачання 14-30 дні (днів) |
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STP11NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.3A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 38 шт: термін постачання 14-30 дні (днів) |
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STU10NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 70W Case: IPAK Gate-source voltage: ±25V On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 165 шт: термін постачання 14-30 дні (днів) |
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STW18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.19A Power dissipation: 130W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.25Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 34nC Pulsed drain current: 52A |
на замовлення 54 шт: термін постачання 14-30 дні (днів) |
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STP18NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 8.2A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.285Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 35nC Pulsed drain current: 52A |
на замовлення 84 шт: термін постачання 14-30 дні (днів) |
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STP24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44nC Pulsed drain current: 68A |
на замовлення 149 шт: термін постачання 14-30 дні (днів) |
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STP34NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 44 шт: термін постачання 14-30 дні (днів) |
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STF34NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 116A |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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STF24NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 305 шт: термін постачання 14-30 дні (днів) |
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STW34NM60ND | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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| STL3NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 22W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±25V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9.5nC Pulsed drain current: 2.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STU7NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 45W Case: IPAK; TO251 On-state resistance: 0.9Ω Mounting: THT Kind of channel: enhancement Gate charge: 14nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STD3NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STD5NM60T4 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.1A Power dissipation: 96W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STD9NM60N | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 745mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17.4nC Pulsed drain current: 26A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP9NM60N | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: TO220-3 On-state resistance: 0.63Ω Mounting: THT Gate charge: 17.4nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STGP20NC60V | STMicroelectronics |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 30A; 200W; TO220AB Type of transistor: IGBT Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Collector current: 30A Gate-emitter voltage: ±20V Pulsed collector current: 100A Collector-emitter voltage: 600V Gate charge: 0.1µC |
на замовлення 31 шт: термін постачання 14-30 дні (днів) |
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SMAJ85CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 85V Breakdown voltage: 99V Max. forward impulse current: 13A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 4878 шт: термін постачання 14-30 дні (днів) |
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SMAJ154A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 154V Breakdown voltage: 171V Max. forward impulse current: 7A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 4342 шт: термін постачання 14-30 дні (днів) |
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SMAJ30CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMAJ |
на замовлення 1604 шт: термін постачання 14-30 дні (днів) |
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SMBJ6.5CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.2...7.58V Max. forward impulse current: 266A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 1255 шт: термін постачання 14-30 дні (днів) |
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SMBJ6.5CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6.5V Breakdown voltage: 7.2...7.58V Max. forward impulse current: 266A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F2M6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F2M6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F2P3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F2P6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 4kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F3M6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: SO20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F3P3 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM8S103F3P3TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: TSSOP20 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 640B EEPROM; 1kB RAM; 8kB FLASH Number of 16bit timers: 2 Number of 8bit timers: 1 Number of PWM channels: 3 Number of 10bit A/D converters: 5 Family: STM8S Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BTB24-800CWRG | STMicroelectronics |
Category: TriacsDescription: Triac; 800V; 25A; TO220AB; Igt: 35mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 25A Case: TO220AB Gate current: 35mA Mounting: THT |
на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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STM32F205RGT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM Memory: 132kB SRAM; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| STM32F205RGT6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STM32F205RGT6V | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STM32F205RGT6W | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB Kind of architecture: Cortex M3 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG Memory: 128kB FLASH; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SCTW40N120G2VAG | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 25A Pulsed drain current: 100A Power dissipation: 290W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.195Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SCTH40N120G2V-7 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 100A Power dissipation: 238W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 61nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SCTH40N120G2V7AG | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 33A Pulsed drain current: 92A Power dissipation: 250W Case: H2PAK7 Gate-source voltage: -10...22V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SCTW40N120G2V | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 36A Pulsed drain current: 108A Power dissipation: 278W Case: HIP247™ Gate-source voltage: -10...22V On-state resistance: 0.1Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
L6226D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz Application: universal Topology: H-bridge Mounting: SMD Case: SO24 Operating temperature: -40...150°C Supply voltage: 8...52V Output current: 1.4A On-state resistance: 0.73Ω Number of channels: 4 Frequency: 0.1MHz Kind of integrated circuit: motor controller Type of integrated circuit: driver |
на замовлення 36 шт: термін постачання 14-30 дні (днів) |
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L6206D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz Application: DC motors Topology: H-bridge Kind of package: tube Mounting: SMD Case: SO24 Operating temperature: -25...125°C Supply voltage: 8...52V Output current: 2.8A On-state resistance: 0.3Ω Number of channels: 4 Frequency: 0.1MHz Kind of integrated circuit: motor controller Type of integrated circuit: driver |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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| STP16DP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Integrated circuit features: fault detection; shift register Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 5...100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16CPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 5...100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16CPC05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 3...100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16CPP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 3...40mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16DPP05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Integrated circuit features: fault detection Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 3...40mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16DPPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Integrated circuit features: fault detection Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 3...40mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| STP16DPS05MTR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V Case: SO24 Mounting: SMD Kind of package: reel; tape Output voltage: 1.3...20V Input voltage: 3...5.5V Number of channels: 16 Frequency: 30MHz Type of integrated circuit: driver Integrated circuit features: fault detection Kind of integrated circuit: LED driver Operating temperature: -40...125°C Output current: 5...100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
L6235D | STMicroelectronics |
Category: Motor and PWM driversDescription: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V Application: universal Mounting: SMD Case: SO24 Operating temperature: -40...150°C Supply voltage: 12...52V Output current: 2.8A Frequency: 0.1MHz Kind of integrated circuit: motor controller Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
STP9NK90Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO220-3 On-state resistance: 1.3Ω Mounting: THT Kind of channel: enhancement Kind of package: tube Version: ESD Technology: SuperMesh™ Gate-source voltage: ±30V |
на замовлення 99 шт: термін постачання 14-30 дні (днів) |
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STP9NK60ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 30W Case: TO220FP On-state resistance: 0.95Ω Mounting: THT Kind of channel: enhancement Kind of package: tube Version: ESD Technology: SuperMesh™ Gate-source voltage: ±30V |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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STP9NK70ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 4.7A Power dissipation: 35W Case: TO220FP On-state resistance: 1.2Ω Mounting: THT Kind of channel: enhancement Kind of package: tube Version: ESD Technology: SuperMesh™ Gate-source voltage: ±30V |
на замовлення 101 шт: термін постачання 14-30 дні (днів) |
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STP9NK65Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.4A Power dissipation: 125W Case: TO220-3 On-state resistance: 1.2Ω Mounting: THT Gate charge: 41nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 25.6A Gate-source voltage: ±30V |
на замовлення 140 шт: термін постачання 14-30 дні (днів) |
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STP9NK60Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.4A Power dissipation: 125W Case: TO220-3 On-state resistance: 0.95Ω Mounting: THT Kind of channel: enhancement Kind of package: tube Version: ESD Technology: SuperMesh™ Gate-source voltage: ±30V |
на замовлення 322 шт: термін постачання 14-30 дні (днів) |
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STP9NK65ZFP | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.4A Power dissipation: 30W Case: TO220FP On-state resistance: 1.2Ω Mounting: THT Gate charge: 41nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 25.6A Gate-source voltage: ±30V |
на замовлення 136 шт: термін постачання 14-30 дні (днів) |
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| STP9N60M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5.5A Power dissipation: 60W Case: TO220-3 On-state resistance: 780mΩ Mounting: THT Gate charge: 10nC Kind of channel: enhancement Technology: MDmesh™ |
на замовлення 146 шт: термін постачання 14-30 дні (днів) |
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| STF10NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 32A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 19nC
Pulsed drain current: 32A
на замовлення 160 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 230.48 грн |
| 5+ | 167.01 грн |
| 10+ | 145.19 грн |
| 25+ | 123.37 грн |
| 50+ | 112.46 грн |
| 100+ | 104.07 грн |
| STW48NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 28A; 330W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 28A
Power dissipation: 330W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 55mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 61 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 546.81 грн |
| 10+ | 314.72 грн |
| 30+ | 255.14 грн |
| 60+ | 244.23 грн |
| STD10NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2037 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.94 грн |
| 10+ | 97.35 грн |
| 100+ | 91.48 грн |
| 500+ | 86.44 грн |
| 1000+ | 82.25 грн |
| STF22NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 72 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 354.30 грн |
| 10+ | 192.19 грн |
| 50+ | 167.85 грн |
| STP11NM60 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 44A; 160W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 160W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 44A
на замовлення 57 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 331.70 грн |
| 10+ | 189.67 грн |
| 25+ | 172.89 грн |
| 50+ | 161.14 грн |
| STW34NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 305 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 566.70 грн |
| 10+ | 360.04 грн |
| 30+ | 325.63 грн |
| 60+ | 304.65 грн |
| 90+ | 292.90 грн |
| 120+ | 284.51 грн |
| 150+ | 277.80 грн |
| 300+ | 256.82 грн |
| STP11NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 6.3A; 90W
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.3A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 38 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 253.07 грн |
| 10+ | 124.21 грн |
| STU10NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 5A; 70W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 70W
Case: IPAK
Gate-source voltage: ±25V
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 165 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 92.32 грн |
| 25+ | 79.73 грн |
| 75+ | 72.18 грн |
| STW18NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8.19A; Idm: 52A; 130W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.19A
Power dissipation: 130W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 34nC
Pulsed drain current: 52A
на замовлення 54 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 220.53 грн |
| 10+ | 182.12 грн |
| 30+ | 164.50 грн |
| STP18NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 8.2A; Idm: 52A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8.2A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 35nC
Pulsed drain current: 52A
на замовлення 84 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 220.53 грн |
| 10+ | 102.39 грн |
| 50+ | 88.96 грн |
| STP24NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
на замовлення 149 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 281.99 грн |
| 5+ | 179.60 грн |
| 10+ | 127.57 грн |
| 25+ | 109.10 грн |
| STP34NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 44 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 644.43 грн |
| 10+ | 517.83 грн |
| STF34NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
на замовлення 50 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.17 грн |
| 3+ | 261.85 грн |
| 10+ | 238.35 грн |
| 25+ | 220.73 грн |
| STF24NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 305 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.23 грн |
| 10+ | 170.37 грн |
| 25+ | 131.76 грн |
| 50+ | 115.82 грн |
| STW34NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 11 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 536.87 грн |
| 2+ | 478.38 грн |
| 10+ | 425.51 грн |
| STL3NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
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| STU7NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 45W; IPAK,TO251
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 45W
Case: IPAK; TO251
On-state resistance: 0.9Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 14nC
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| STD3NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: SMD
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| STD5NM60T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STD9NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
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| STP9NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; 70W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: TO220-3
On-state resistance: 0.63Ω
Mounting: THT
Gate charge: 17.4nC
Kind of channel: enhancement
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| STGP20NC60V | ![]() |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 200W; TO220AB
Type of transistor: IGBT
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Collector-emitter voltage: 600V
Gate charge: 0.1µC
на замовлення 31 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 288.32 грн |
| 3+ | 237.51 грн |
| 10+ | 190.51 грн |
| SMAJ85CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 99V; 13A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 85V
Breakdown voltage: 99V
Max. forward impulse current: 13A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 4878 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 21+ | 20.06 грн |
| 100+ | 15.11 грн |
| 500+ | 11.67 грн |
| 1000+ | 10.24 грн |
| 2000+ | 8.81 грн |
| 2500+ | 8.31 грн |
| SMAJ154A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 171V; 7A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 154V
Breakdown voltage: 171V
Max. forward impulse current: 7A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 4342 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 34.35 грн |
| 16+ | 27.19 грн |
| 18+ | 24.42 грн |
| 100+ | 16.11 грн |
| 250+ | 13.76 грн |
| 500+ | 12.42 грн |
| 1000+ | 11.16 грн |
| SMAJ30CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 33.3V; 36A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMAJ
на замовлення 1604 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.11 грн |
| 23+ | 18.30 грн |
| 50+ | 13.68 грн |
| 100+ | 12.09 грн |
| 250+ | 10.24 грн |
| 500+ | 8.98 грн |
| 1000+ | 7.89 грн |
| SMBJ6.5CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 1255 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 41+ | 10.24 грн |
| 46+ | 9.32 грн |
| 50+ | 8.39 грн |
| 54+ | 7.81 грн |
| 100+ | 7.39 грн |
| SMBJ6.5CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 7.2÷7.58V; 266A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6.5V
Breakdown voltage: 7.2...7.58V
Max. forward impulse current: 266A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 50µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| STM8S103F2M6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F2M6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F2P3TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F2P6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 4kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F3M6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; SO20; 3÷5.5VDC; 16bit timers: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: SO20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F3P3 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| STM8S103F3P3TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; TSSOP20; 3÷5.5VDC; 8bit timers: 1
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: TSSOP20
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 640B EEPROM; 1kB RAM; 8kB FLASH
Number of 16bit timers: 2
Number of 8bit timers: 1
Number of PWM channels: 3
Number of 10bit A/D converters: 5
Family: STM8S
Kind of core: 8-bit
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| BTB24-800CWRG |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
Category: Triacs
Description: Triac; 800V; 25A; TO220AB; Igt: 35mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 25A
Case: TO220AB
Gate current: 35mA
Mounting: THT
на замовлення 108 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.17 грн |
| 4+ | 130.09 грн |
| 10+ | 104.07 грн |
| 25+ | 84.77 грн |
| 50+ | 72.18 грн |
| 100+ | 63.78 грн |
| STM32F205RGT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C; IrDA; LIN; MMC; SPI; USART; USB OTG
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 132kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
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| STM32F205RGT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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| STM32F205RGT6V |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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| STM32F205RGT6W |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SDIO; SPI; UART; USART; USB
Kind of architecture: Cortex M3
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RNG
Memory: 128kB FLASH; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Kind of core: 32-bit
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| SCTW40N120G2VAG |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 100A; 290W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 290W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.195Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
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| SCTH40N120G2V-7 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 100A; 238W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 100A
Power dissipation: 238W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 61nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTH40N120G2V7AG |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 33A; Idm: 92A; 250W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 33A
Pulsed drain current: 92A
Power dissipation: 250W
Case: H2PAK7
Gate-source voltage: -10...22V
On-state resistance: 0.105Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| SCTW40N120G2V |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 108A; 278W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 36A
Pulsed drain current: 108A
Power dissipation: 278W
Case: HIP247™
Gate-source voltage: -10...22V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
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| L6226D |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 1.4A; Ch: 4; 100kHz
Application: universal
Topology: H-bridge
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 8...52V
Output current: 1.4A
On-state resistance: 0.73Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
на замовлення 36 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 699.56 грн |
| 3+ | 617.70 грн |
| 10+ | 590.00 грн |
| 25+ | 562.31 грн |
| 32+ | 555.59 грн |
| L6206D |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Application: DC motors
Topology: H-bridge
Kind of package: tube
Mounting: SMD
Case: SO24
Operating temperature: -25...125°C
Supply voltage: 8...52V
Output current: 2.8A
On-state resistance: 0.3Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; H-bridge; motor controller; SO24; 2.8A; Ch: 4; 100kHz
Application: DC motors
Topology: H-bridge
Kind of package: tube
Mounting: SMD
Case: SO24
Operating temperature: -25...125°C
Supply voltage: 8...52V
Output current: 2.8A
On-state resistance: 0.3Ω
Number of channels: 4
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
на замовлення 35 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 548.62 грн |
| 10+ | 476.70 грн |
| 32+ | 454.04 грн |
| STP16DP05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection; shift register
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection; shift register
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
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| STP16CPS05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
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| STP16CPC05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...100mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...100mA
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| STP16CPP05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
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| STP16DPP05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
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| STP16DPPS05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 3÷40mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 3...40mA
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| STP16DPS05MTR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
Category: LED drivers
Description: IC: driver; LED driver; SO24; 5÷100mA; 1.3÷20V; Ch: 16; Uin: 3÷5.5V
Case: SO24
Mounting: SMD
Kind of package: reel; tape
Output voltage: 1.3...20V
Input voltage: 3...5.5V
Number of channels: 16
Frequency: 30MHz
Type of integrated circuit: driver
Integrated circuit features: fault detection
Kind of integrated circuit: LED driver
Operating temperature: -40...125°C
Output current: 5...100mA
товару немає в наявності
В кошику
од. на суму грн.
| L6235D |
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Виробник: STMicroelectronics
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
Category: Motor and PWM drivers
Description: IC: driver; motor controller; SO24; 2.8A; 100kHz; 12÷52V
Application: universal
Mounting: SMD
Case: SO24
Operating temperature: -40...150°C
Supply voltage: 12...52V
Output current: 2.8A
Frequency: 0.1MHz
Kind of integrated circuit: motor controller
Type of integrated circuit: driver
товару немає в наявності
В кошику
од. на суму грн.
| STP9NK90Z | ![]() |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
On-state resistance: 1.3Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO220-3
On-state resistance: 1.3Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
на замовлення 99 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 131.76 грн |
| 50+ | 107.43 грн |
| STP9NK60ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.95Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.95Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
на замовлення 65 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.38 грн |
| 10+ | 59.59 грн |
| 50+ | 57.07 грн |
| STP9NK70ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 1.2Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 4.7A; 35W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.7A
Power dissipation: 35W
Case: TO220FP
On-state resistance: 1.2Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
на замовлення 101 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 200.65 грн |
| 5+ | 153.59 грн |
| 10+ | 138.48 грн |
| 25+ | 121.69 грн |
| 50+ | 111.62 грн |
| 100+ | 104.07 грн |
| STP9NK65Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 125W
Case: TO220-3
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 25.6A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 125W
Case: TO220-3
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 25.6A
Gate-source voltage: ±30V
на замовлення 140 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 71.34 грн |
| 25+ | 63.78 грн |
| 100+ | 57.91 грн |
| STP9NK60Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
On-state resistance: 0.95Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.4A; 125W; TO220-3; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.4A
Power dissipation: 125W
Case: TO220-3
On-state resistance: 0.95Ω
Mounting: THT
Kind of channel: enhancement
Kind of package: tube
Version: ESD
Technology: SuperMesh™
Gate-source voltage: ±30V
на замовлення 322 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 227.76 грн |
| 5+ | 132.60 грн |
| 10+ | 113.30 грн |
| 30+ | 83.93 грн |
| 50+ | 81.41 грн |
| 100+ | 78.05 грн |
| STP9NK65ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 25.6A
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6.4A; Idm: 25.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.4A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 1.2Ω
Mounting: THT
Gate charge: 41nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 25.6A
Gate-source voltage: ±30V
на замовлення 136 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 122.92 грн |
| 10+ | 89.80 грн |
| 25+ | 78.89 грн |
| 50+ | 72.18 грн |
| 100+ | 65.46 грн |
| STP9N60M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 10nC
Kind of channel: enhancement
Technology: MDmesh™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5.5A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5.5A
Power dissipation: 60W
Case: TO220-3
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 10nC
Kind of channel: enhancement
Technology: MDmesh™
на замовлення 146 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.08 грн |
| 10+ | 53.21 грн |
| 50+ | 42.13 грн |
| 100+ | 41.96 грн |






















