Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129394) > Сторінка 2073 з 2157
| Фото | Назва | Виробник | Інформація |
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1N5818 | STMicroelectronics |
 Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: Ammo Pack Max. load current: 10A |
на замовлення 2505 шт: термін постачання 14-30 дні (днів) |
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| STH240N10F7-2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 300W Case: D2PAK; TO263AB On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 160nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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LD3985M28R | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.1V Output voltage: 2.8V Output current: 0.15A Case: SOT23-5 Mounting: SMD Manufacturer series: LD3985 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 2...3% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BZW50-27RL | STMicroelectronics |
Category: Diodes - Unclassified Description: BZW50-27RL |
на замовлення 2000 шт: термін постачання 14-30 дні (днів) |
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STW9NK90Z | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247 Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 900V Drain current: 5A Power dissipation: 160W Case: TO247 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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| STB6N60M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 4.5A Power dissipation: 60W Case: D2PAK On-state resistance: 1.2mΩ Mounting: SMD Gate charge: 8nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD6N60DM2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Power dissipation: 60W Case: DPAK; TO252 On-state resistance: 1.1Ω Mounting: SMD Gate charge: 6.2nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STM32F439BGT6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 168 Case: LQFP208 Supply voltage: 1.8...3.6V DC Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG Kind of architecture: Cortex M4 Memory: 256kB SRAM; 1MB FLASH Family: STM32F4 Kind of core: 32-bit |
на замовлення 26 шт: термін постачання 14-30 дні (днів) |
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STM32F427ZIT7 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 256kB SRAM; 2MB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F4 Kind of core: 32-bit Number of 16bit timers: 14 Kind of package: in-tray |
на замовлення 33 шт: термін постачання 14-30 дні (днів) |
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SM6T36A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 2113 шт: термін постачання 14-30 дні (днів) |
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SM6T36AY | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 12A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| Z0107MA 2AL2 | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 1A Case: TO92 Gate current: 5mA Max. forward impulse current: 8A Mounting: THT Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STPS5L40 | STMicroelectronics |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Case: DO201AD Max. forward voltage: 0.5V Max. load current: 15A Max. forward impulse current: 150A Leakage current: 75mA Kind of package: Ammo Pack |
на замовлення 841 шт: термін постачання 14-30 дні (днів) |
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Z0405MH | STMicroelectronics |
Category: Triacs Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: IPAK Gate current: 5mA Max. forward impulse current: 16A Mounting: THT Kind of package: tube |
на замовлення 270 шт: термін постачання 14-30 дні (днів) |
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SM15T30A | STMicroelectronics |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1403 шт: термін постачання 14-30 дні (днів) |
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SM15T30CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 25.6V Breakdown voltage: 30V Max. forward impulse current: 36A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 3667 шт: термін постачання 14-30 дні (днів) |
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STM32L452VET6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 80MHz Mounting: SMD Number of inputs/outputs: 83 Case: LQFP100 Supply voltage: 1.71...3.6V DC Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog Memory: 160kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 2 Number of 12bit D/A converters: 1 Family: STM32L4 Kind of core: 32-bit |
на замовлення 81 шт: термін постачання 14-30 дні (днів) |
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| ACS108-8TN-TR | STMicroelectronics |
Category: Triacs Description: Triac; 800V; 800mA; SOT223; Igt: 5mA Type of thyristor: triac Max. off-state voltage: 0.8kV Max. load current: 0.8A Case: SOT223 Gate current: 5mA Mounting: SMD |
на замовлення 65000 шт: термін постачання 14-30 дні (днів) |
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| VNS3NV04PTR-E | STMicroelectronics |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8 Type of integrated circuit: power switch Kind of integrated circuit: low-side Output current: 3.5A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: SOIC8 On-state resistance: 0.12Ω Active logical level: low Operating temperature: -40...150°C Integrated circuit features: thermal protection |
на замовлення 7500 шт: термін постачання 14-30 дні (днів) |
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SMCJ33CA-TR | STMicroelectronics |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33V Breakdown voltage: 38.6V Max. forward impulse current: 29A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Kind of package: reel; tape |
на замовлення 1884 шт: термін постачання 14-30 дні (днів) |
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| STL120N10F8 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 125A Pulsed drain current: 500A Power dissipation: 150W Case: PowerFLAT 5x6 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 56nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2990 шт: термін постачання 14-30 дні (днів) |
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| VL53L3CXV0DH/1 | STMicroelectronics |
Category: Unclassified Description: VL53L3CXV0DH/1 |
на замовлення 4500 шт: термін постачання 14-30 дні (днів) |
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| STF20N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 18A Power dissipation: 30W Case: TO220FP On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STGWT60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO3P Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO3P Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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| STGWA60H65DFB | STMicroelectronics |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STW75N60DM6 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 45A Pulsed drain current: 240A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 32mΩ Mounting: THT Gate charge: 117nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MJD45H11T4 | STMicroelectronics |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 40 Mounting: SMD Kind of package: reel; tape |
на замовлення 602 шт: термін постачання 14-30 дні (днів) |
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STP110N10F7 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A Type of transistor: N-MOSFET Technology: STripFET™ F7 Polarisation: unipolar Drain-source voltage: 100V Drain current: 76A Pulsed drain current: 415A Power dissipation: 150W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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TS914IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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TS914ID | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 800kHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: low power; rail-to-rail Input offset voltage: 12mV Input bias current: 0.3nA Input offset current: 0.2nA Quiescent current: 400µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS914AIDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS914AID | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 0.8...1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.5V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS914AIYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 0.8V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 7mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TS914IYDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV Type of integrated circuit: operational amplifier Bandwidth: 1.4MHz Number of channels: 4 Mounting: SMT Voltage supply range: 2.7...16V DC Case: SO14 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail; universal Input offset voltage: 12mV Kind of package: reel; tape Input bias current: 0.3nA Input offset current: 0.2nA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTB04-600SL | STMicroelectronics |
 Category: TriacsDescription: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application Type of thyristor: triac Max. off-state voltage: 0.6kV Max. load current: 4A Case: TO220AB Gate current: 10mA Features of semiconductor devices: lighting application Mounting: THT Kind of package: tube |
на замовлення 437 шт: термін постачання 14-30 дні (днів) |
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| STP16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.9A Pulsed drain current: 44A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.36Ω Mounting: THT Gate charge: 19.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STW56N65M2-4 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31A Pulsed drain current: 196A Power dissipation: 358W Case: TO247-4 Gate-source voltage: ±25V On-state resistance: 49mΩ Mounting: THT Gate charge: 93nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD16N65M2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 110W Case: DPAK; TO252 On-state resistance: 0.32Ω Mounting: SMD Gate charge: 19.5nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STH315N10F7-2 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: H2PAK-2 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STH315N10F7-6 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W Type of transistor: N-MOSFET Technology: STripFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 180A Power dissipation: 315W Case: TO263-7 On-state resistance: 2.3mΩ Mounting: SMD Gate charge: 180nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STP200N3LL | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Kind of package: tube Kind of channel: enhancement Mounting: THT Case: TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Gate charge: 53nC On-state resistance: 2.4mΩ Power dissipation: 176.5W Gate-source voltage: ±20V Pulsed drain current: 480A |
на замовлення 153 шт: термін постачання 14-30 дні (днів) |
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LM833DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV Type of integrated circuit: operational amplifier Bandwidth: 15MHz Number of channels: 2 Mounting: SMT Voltage supply range: 5...30V DC Case: SO8 Operating temperature: -40...105°C Slew rate: 7V/μs Input offset voltage: 0.3mV Kind of package: reel; tape Integrated circuit features: low noise |
на замовлення 3590 шт: термін постачання 14-30 дні (днів) |
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MC1458IDT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Quiescent current: 2.3mA Slew rate: 0.8V/μs Operating temperature: -40...105°C Input offset current: 300nA Input bias current: 0.8µA |
на замовлення 3314 шт: термін постачання 14-30 дні (днів) |
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MC1458DT | STMicroelectronics |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: 2 Mounting: SMT Voltage supply range: ± 2.5...15V DC; 5...30V DC Case: SO8 Input offset voltage: 6mV Kind of package: reel; tape Quiescent current: 2.3mA Slew rate: 0.8V/μs Operating temperature: 0...70°C Input offset current: 300nA Input bias current: 0.8µA |
на замовлення 2525 шт: термін постачання 14-30 дні (днів) |
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LD39150PT-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.4V Output voltage: 1.22...5V Output current: 1.5A Case: PPAK Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
на замовлення 2449 шт: термін постачання 14-30 дні (днів) |
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| LD39150PU-R | STMicroelectronics |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6 Operating temperature: -40...125°C Case: DFN6 Mounting: SMD Type of integrated circuit: voltage regulator Voltage drop: 0.4V Number of channels: 1 Output voltage: 1.22...5V Output current: 1.5A Tolerance: 1.5...3% Input voltage: 2.5...6V Manufacturer series: LD39150 Kind of voltage regulator: adjustable; LDO; linear Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| LD39150PU33R | STMicroelectronics |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 3.3V Output current: 1.5A Case: DFN6 Mounting: SMD Manufacturer series: LD39150 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: 1.5...3% Number of channels: 1 Input voltage: 2.5...6V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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STF4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
на замовлення 62 шт: термін постачання 14-30 дні (днів) |
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STP4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| STL4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 10.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STD4N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.7A Pulsed drain current: 12A Power dissipation: 60W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STU4N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3A Pulsed drain current: 12A Power dissipation: 60W Case: IPAK Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: THT Gate charge: 10.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| STP14N80K5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.4A Pulsed drain current: 48A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 445mΩ Mounting: THT Gate charge: 22nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
 +1 |
STM32L052K8U6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 32MHz Mounting: SMD Number of inputs/outputs: 27 Case: UFQFPN32 Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x3; USART x2; USB Kind of architecture: Cortex M0+ Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH Operating temperature: -40...85°C Family: STM32L0 Kind of core: 32-bit Number of 12bit A/D converters: 10 Number of 16bit timers: 5 Number of 12bit D/A converters: 1 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of package: in-tray |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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STM8S207K8T6C | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 24MHz Mounting: SMD Case: LQFP32 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; SPI; UART Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 7 Family: STM8S Kind of core: 8-bit Number of 16bit timers: 3 Integrated circuit features: Beeper; IWDG; WWDG |
на замовлення 243 шт: термін постачання 14-30 дні (днів) |
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| STM8L152C8U6 | STMicroelectronics |
Category: ST microcontrollers Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: SMD Case: UFQFPN48 Supply voltage: 1.65...3.6V DC Interface: I2C; IrDA; SPI x2; USART x2 Integrated circuit features: Beeper; IWDG; RTC; WWDG Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH Number of 12bit A/D converters: 28 Number of 12bit D/A converters: 2 Number of 16bit timers: 4 Number of 8bit timers: 1 Number of PWM channels: 5 Family: STM8L Kind of core: 8-bit Number of comparators: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ACS120-7SB-TR | STMicroelectronics |
Category: Thyristors - others Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™ Type of thyristor: AC switch Max. load current: 2A Case: DPAK Mounting: SMD Kind of package: reel; tape Gate current: 10mA Number of switches: 1 Max. off-state voltage: 700V Technology: ASD™ Features of semiconductor devices: internally triggered |
на замовлення 499 шт: термін постачання 14-30 дні (днів) |
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M24C08-RMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8 Interface: I2C Memory: 8kb EEPROM Mounting: SMD Case: SO8 Operating temperature: -40...85°C Operating voltage: 1.8...5.5V Clock frequency: 400kHz Memory organisation: 1kx8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial |
на замовлення 3108 шт: термін постачання 14-30 дні (днів) |
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M24C08-RDW6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.8...5.5V Clock frequency: 400kHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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M24C08-FMN6TP | STMicroelectronics |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 8kb EEPROM Interface: I2C Memory organisation: 1kx8bit Operating voltage: 1.7...5.5V Clock frequency: 400kHz Mounting: SMD Case: SO8 Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N5818 |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 1A; DO41; Ufmax: 0.55V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Max. load current: 10A
на замовлення 2505 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.45 грн |
| 43+ | 9.98 грн |
| 50+ | 8.49 грн |
| 100+ | 6.67 грн |
| 250+ | 5.70 грн |
| 500+ | 5.10 грн |
| 650+ | 4.89 грн |
| 1000+ | 4.58 грн |
| 2000+ | 4.13 грн |
| STH240N10F7-2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 300W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 300W
Case: D2PAK; TO263AB
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 160nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| LD3985M28R |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 0.15A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.1V
Output voltage: 2.8V
Output current: 0.15A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LD3985
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 2...3%
Number of channels: 1
Input voltage: 2.5...6V
товару немає в наявності
В кошику
од. на суму грн.
| BZW50-27RL |
|
на замовлення 2000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 70.45 грн |
| STW9NK90Z |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 5A; 160W; TO247
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 5A
Power dissipation: 160W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 68 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 215.86 грн |
| 10+ | 173.60 грн |
| 20+ | 161.02 грн |
| 30+ | 153.47 грн |
| STB6N60M2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.5A; 60W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.5A
Power dissipation: 60W
Case: D2PAK
On-state resistance: 1.2mΩ
Mounting: SMD
Gate charge: 8nC
товару немає в наявності
В кошику
од. на суму грн.
| STD6N60DM2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; 60W; DPAK,TO252
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 60W
Case: DPAK; TO252
On-state resistance: 1.1Ω
Mounting: SMD
Gate charge: 6.2nC
Kind of channel: enhancement
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В кошику
од. на суму грн.
| STM32F439BGT6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP208; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 168
Case: LQFP208
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SAI; SDIO; SPI x6; USART x4; USB OTG
Kind of architecture: Cortex M4
Memory: 256kB SRAM; 1MB FLASH
Family: STM32F4
Kind of core: 32-bit
на замовлення 26 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1016.06 грн |
| 3+ | 868.00 грн |
| 10+ | 754.78 грн |
| STM32F427ZIT7 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
Number of 16bit timers: 14
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 256kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
Number of 16bit timers: 14
Kind of package: in-tray
на замовлення 33 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1027.80 грн |
| 10+ | 796.72 грн |
| 25+ | 754.78 грн |
| SM6T36A |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 2113 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.64 грн |
| 44+ | 9.73 грн |
| 48+ | 8.81 грн |
| 54+ | 7.88 грн |
| 59+ | 7.13 грн |
| 100+ | 6.46 грн |
| SM6T36AY |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 36V; 12A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
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В кошику
од. на суму грн.
| Z0107MA 2AL2 |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
Category: Triacs
Description: Triac; 600V; 1A; TO92; Igt: 5mA; Ifsm: 8A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 1A
Case: TO92
Gate current: 5mA
Max. forward impulse current: 8A
Mounting: THT
Kind of package: Ammo Pack
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В кошику
од. на суму грн.
| STPS5L40 |
|
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 5A; DO201AD; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.5V
Max. load current: 15A
Max. forward impulse current: 150A
Leakage current: 75mA
Kind of package: Ammo Pack
на замовлення 841 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.64 грн |
| 44+ | 9.64 грн |
| 100+ | 7.30 грн |
| Z0405MH |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; IPAK; Igt: 5mA; Ifsm: 16A
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: IPAK
Gate current: 5mA
Max. forward impulse current: 16A
Mounting: THT
Kind of package: tube
на замовлення 270 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.51 грн |
| 19+ | 22.31 грн |
| 24+ | 17.86 грн |
| 75+ | 14.17 грн |
| SM15T30A |
|
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; unidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1403 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 56.90 грн |
| 10+ | 44.62 грн |
| 11+ | 41.09 грн |
| 50+ | 33.63 грн |
| 100+ | 30.95 грн |
| 250+ | 27.76 грн |
| 500+ | 25.58 грн |
| 1000+ | 23.65 грн |
| SM15T30CA |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 30V; 36A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 25.6V
Breakdown voltage: 30V
Max. forward impulse current: 36A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 3667 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.61 грн |
| 16+ | 26.42 грн |
| 100+ | 24.49 грн |
| 2500+ | 21.89 грн |
| STM32L452VET6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 80MHz; LQFP100; 1.71÷3.6VDC; Cmp: 2
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 80MHz
Mounting: SMD
Number of inputs/outputs: 83
Case: LQFP100
Supply voltage: 1.71...3.6V DC
Interface: CAN; GPIO; I2C; LPUART; QSPI; SAI; SDMMC; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; operational amplifier; TRNG; watchdog
Memory: 160kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 2
Number of 12bit D/A converters: 1
Family: STM32L4
Kind of core: 32-bit
на замовлення 81 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 518.41 грн |
| 3+ | 429.39 грн |
| 10+ | 358.94 грн |
| 25+ | 352.23 грн |
| ACS108-8TN-TR |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
Category: Triacs
Description: Triac; 800V; 800mA; SOT223; Igt: 5mA
Type of thyristor: triac
Max. off-state voltage: 0.8kV
Max. load current: 0.8A
Case: SOT223
Gate current: 5mA
Mounting: SMD
на замовлення 65000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.53 грн |
| VNS3NV04PTR-E |
|
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 3.5A; Ch: 1; N-Channel; SMD; SOIC8
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 3.5A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOIC8
On-state resistance: 0.12Ω
Active logical level: low
Operating temperature: -40...150°C
Integrated circuit features: thermal protection
на замовлення 7500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 53.29 грн |
| SMCJ33CA-TR |
|
Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 38.6V; 29A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33V
Breakdown voltage: 38.6V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Kind of package: reel; tape
на замовлення 1884 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 48.77 грн |
| 12+ | 35.06 грн |
| 50+ | 27.09 грн |
| 100+ | 24.32 грн |
| 500+ | 19.29 грн |
| 1000+ | 17.70 грн |
| STL120N10F8 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 125A; Idm: 500A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 150W
Case: PowerFLAT 5x6
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 56nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 150.12 грн |
| 10+ | 113.22 грн |
| 15+ | 103.99 грн |
| 75+ | 100.64 грн |
| VL53L3CXV0DH/1 |
|
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 208.63 грн |
| STF20N65M5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 30W
Case: TO220FP
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhancement
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| STGWT60H65DFB |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO3P
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO3P
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 88 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 318.82 грн |
| 3+ | 260.82 грн |
| 5+ | 251.59 грн |
| STGWA60H65DFB |
|
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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| STW75N60DM6 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 45A; Idm: 240A; 446W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 240A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
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| MJD45H11T4 |
|
Виробник: STMicroelectronics
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
на замовлення 602 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 76.77 грн |
| 10+ | 44.53 грн |
| 100+ | 30.78 грн |
| 500+ | 23.40 грн |
| STP110N10F7 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ F7; unipolar; 100V; 76A; Idm: 415A
Type of transistor: N-MOSFET
Technology: STripFET™ F7
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Pulsed drain current: 415A
Power dissipation: 150W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 35 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 193.28 грн |
| 10+ | 152.63 грн |
| TS914IDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
на замовлення 18 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 130.06 грн |
| 5+ | 101.48 грн |
| 10+ | 92.25 грн |
| TS914ID |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 800kHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 800kHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: low power; rail-to-rail
Input offset voltage: 12mV
Input bias current: 0.3nA
Input offset current: 0.2nA
Quiescent current: 400µA
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| TS914AIDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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| TS914AID |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 0.8÷1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 0.8...1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.5V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
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| TS914AIYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; 2.7÷16VDC; SO14; 7mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 0.8V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 7mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| TS914IYDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; Ch: 4; 2.7÷16VDC; SO14; 12mV
Type of integrated circuit: operational amplifier
Bandwidth: 1.4MHz
Number of channels: 4
Mounting: SMT
Voltage supply range: 2.7...16V DC
Case: SO14
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail; universal
Input offset voltage: 12mV
Kind of package: reel; tape
Input bias current: 0.3nA
Input offset current: 0.2nA
Application: automotive industry
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| BTB04-600SL | |
|
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
Category: Triacs
Description: Triac; 600V; 4A; TO220AB; Igt: 10mA; lighting application
Type of thyristor: triac
Max. off-state voltage: 0.6kV
Max. load current: 4A
Case: TO220AB
Gate current: 10mA
Features of semiconductor devices: lighting application
Mounting: THT
Kind of package: tube
на замовлення 437 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 83.09 грн |
| 8+ | 54.34 грн |
| 10+ | 47.89 грн |
| 50+ | 36.73 грн |
| 100+ | 33.13 грн |
| STP16N65M2 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.9A; Idm: 44A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.9A
Pulsed drain current: 44A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 19.5nC
Kind of package: tube
Kind of channel: enhancement
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| STW56N65M2-4 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31A; Idm: 196A; 358W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31A
Pulsed drain current: 196A
Power dissipation: 358W
Case: TO247-4
Gate-source voltage: ±25V
On-state resistance: 49mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| STD16N65M2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; 110W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 110W
Case: DPAK; TO252
On-state resistance: 0.32Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhancement
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| STH315N10F7-2 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 315W; H2PAK-2
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: H2PAK-2
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
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| STH315N10F7-6 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 100V; 180A; 315W
Type of transistor: N-MOSFET
Technology: STripFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 315W
Case: TO263-7
On-state resistance: 2.3mΩ
Mounting: SMD
Gate charge: 180nC
Kind of channel: enhancement
Application: automotive industry
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| STP200N3LL |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Gate charge: 53nC
On-state resistance: 2.4mΩ
Power dissipation: 176.5W
Gate-source voltage: ±20V
Pulsed drain current: 480A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Gate charge: 53nC
On-state resistance: 2.4mΩ
Power dissipation: 176.5W
Gate-source voltage: ±20V
Pulsed drain current: 480A
на замовлення 153 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 111.99 грн |
| 10+ | 66.25 грн |
| 50+ | 58.71 грн |
| 100+ | 55.35 грн |
| LM833DT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
Category: SMD operational amplifiers
Description: IC: operational amplifier; 15MHz; Ch: 2; 5÷30VDC; SO8; 0.3mV
Type of integrated circuit: operational amplifier
Bandwidth: 15MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: 5...30V DC
Case: SO8
Operating temperature: -40...105°C
Slew rate: 7V/μs
Input offset voltage: 0.3mV
Kind of package: reel; tape
Integrated circuit features: low noise
на замовлення 3590 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.29 грн |
| 22+ | 19.46 грн |
| 25+ | 17.36 грн |
| 28+ | 15.35 грн |
| 50+ | 15.18 грн |
| MC1458IDT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: -40...105°C
Input offset current: 300nA
Input bias current: 0.8µA
на замовлення 3314 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.09 грн |
| 19+ | 22.14 грн |
| 21+ | 20.38 грн |
| 25+ | 18.03 грн |
| 100+ | 15.26 грн |
| 250+ | 13.92 грн |
| 500+ | 13.33 грн |
| 1000+ | 12.92 грн |
| 2500+ | 12.41 грн |
| MC1458DT |
|
Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; ±2.5÷15VDC,5÷30VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: 2
Mounting: SMT
Voltage supply range: ± 2.5...15V DC; 5...30V DC
Case: SO8
Input offset voltage: 6mV
Kind of package: reel; tape
Quiescent current: 2.3mA
Slew rate: 0.8V/μs
Operating temperature: 0...70°C
Input offset current: 300nA
Input bias current: 0.8µA
на замовлення 2525 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 46.96 грн |
| 13+ | 32.88 грн |
| 25+ | 28.68 грн |
| 100+ | 23.73 грн |
| 250+ | 21.22 грн |
| 500+ | 19.71 грн |
| 1000+ | 18.53 грн |
| 2500+ | 17.19 грн |
| LD39150PT-R |
|
Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; PPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.4V
Output voltage: 1.22...5V
Output current: 1.5A
Case: PPAK
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
на замовлення 2449 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.67 грн |
| 10+ | 52.00 грн |
| 25+ | 47.64 грн |
| 100+ | 42.18 грн |
| 250+ | 41.26 грн |
| LD39150PU-R |
|
Виробник: STMicroelectronics
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.22÷5V; 1.5A; DFN6
Operating temperature: -40...125°C
Case: DFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.4V
Number of channels: 1
Output voltage: 1.22...5V
Output current: 1.5A
Tolerance: 1.5...3%
Input voltage: 2.5...6V
Manufacturer series: LD39150
Kind of voltage regulator: adjustable; LDO; linear
Kind of package: reel; tape
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| LD39150PU33R |
|
Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1.5A; DFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 3.3V
Output current: 1.5A
Case: DFN6
Mounting: SMD
Manufacturer series: LD39150
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: 1.5...3%
Number of channels: 1
Input voltage: 2.5...6V
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| STF4N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 62 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 125.54 грн |
| 10+ | 82.19 грн |
| 50+ | 60.38 грн |
| STP4N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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| STL4N80K5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 10.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| STD4N80K5 |
|
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.7A; Idm: 12A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.7A
Pulsed drain current: 12A
Power dissipation: 60W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| STU4N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3A; Idm: 12A; 60W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 60W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: THT
Gate charge: 10.5nC
Kind of package: tube
Kind of channel: enhancement
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| STP14N80K5 |
|
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.4A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.4A
Pulsed drain current: 48A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 445mΩ
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Kind of channel: enhancement
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| STM32L052K8U6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Number of 16bit timers: 5
Number of 12bit D/A converters: 1
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 32MHz
Mounting: SMD
Number of inputs/outputs: 27
Case: UFQFPN32
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x3; USART x2; USB
Kind of architecture: Cortex M0+
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Family: STM32L0
Kind of core: 32-bit
Number of 12bit A/D converters: 10
Number of 16bit timers: 5
Number of 12bit D/A converters: 1
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of package: in-tray
на замовлення 135 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.31 грн |
| 10+ | 126.64 грн |
| 25+ | 121.60 грн |
| STM8S207K8T6C |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
Number of 16bit timers: 3
Integrated circuit features: Beeper; IWDG; WWDG
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 24MHz; LQFP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 24MHz
Mounting: SMD
Case: LQFP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; SPI; UART
Memory: 1kB EEPROM; 6kB RAM; 64kB FLASH
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Family: STM8S
Kind of core: 8-bit
Number of 16bit timers: 3
Integrated circuit features: Beeper; IWDG; WWDG
на замовлення 243 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 201.40 грн |
| 5+ | 160.18 грн |
| 10+ | 154.31 грн |
| STM8L152C8U6 |
|
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; UFQFPN48; 1.65÷3.6VDC; Cmp: 2
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: SMD
Case: UFQFPN48
Supply voltage: 1.65...3.6V DC
Interface: I2C; IrDA; SPI x2; USART x2
Integrated circuit features: Beeper; IWDG; RTC; WWDG
Memory: 2kB EEPROM; 4kB RAM; 64kB FLASH
Number of 12bit A/D converters: 28
Number of 12bit D/A converters: 2
Number of 16bit timers: 4
Number of 8bit timers: 1
Number of PWM channels: 5
Family: STM8L
Kind of core: 8-bit
Number of comparators: 2
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| ACS120-7SB-TR |
|
Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
Category: Thyristors - others
Description: Thyristor: AC switch; 700V; Ifmax: 2A; Igt: 10mA; DPAK; SMD; ASD™
Type of thyristor: AC switch
Max. load current: 2A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Number of switches: 1
Max. off-state voltage: 700V
Technology: ASD™
Features of semiconductor devices: internally triggered
на замовлення 499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.90 грн |
| 10+ | 64.16 грн |
| 100+ | 54.34 грн |
| M24C08-RMN6TP |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz; SO8
Interface: I2C
Memory: 8kb EEPROM
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Memory organisation: 1kx8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
на замовлення 3108 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.64 грн |
| 100+ | 10.73 грн |
| 2500+ | 8.89 грн |
| M24C08-RDW6TP |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.8÷5.5V; 400kHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
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| M24C08-FMN6TP |
|
Виробник: STMicroelectronics
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; I2C; 1kx8bit; 1.7÷5.5V; 400kHz; SO8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 8kb EEPROM
Interface: I2C
Memory organisation: 1kx8bit
Operating voltage: 1.7...5.5V
Clock frequency: 400kHz
Mounting: SMD
Case: SO8
Kind of interface: serial
Operating temperature: -40...85°C
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В кошику
од. на суму грн.