Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129541) > Сторінка 2155 з 2160
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TS472IQT | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: QFN24 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TS472EIJT | STMicroelectronics |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC Type of integrated circuit: audio amplifier Number of channels: 2 Mounting: SMD Voltage supply range: 2.2...5.5V DC Case: flip chip12 Operating temperature: -40...85°C Quiescent current: 2.4mA Amplifier class: AB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSC2010HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.9V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSC2010IDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSC2012HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 490kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 2.8V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSC2010IYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 820kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 7.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSC2011HYDT | STMicroelectronics |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8 Type of integrated circuit: instrumentation amplifier Bandwidth: 750kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.7...5.5V DC Case: SO8 Operating temperature: -20...70°C Slew rate: 3.5V/μs Quiescent current: 2.4mA Input offset voltage: 4.5mV Application: automotive industry Kind of integrated circuit: current sense |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STF8N80K5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 16.5nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 24A |
на замовлення 127 шт: термін постачання 14-30 дні (днів) |
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STF8NK100Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4.3A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
на замовлення 43 шт: термін постачання 14-30 дні (днів) |
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STF80N900K6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 21.5W Case: TO220FP On-state resistance: 0.9Ω Mounting: THT Gate charge: 7nC Kind of channel: enhancement |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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| STF80N240K6 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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STTH15R06FP | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 15A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: TO220FPAC Kind of package: tube Max. forward voltage: 2.9V Max. load current: 30A Leakage current: 60µA Reverse recovery time: 50ns |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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STF21N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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STP21N65M5 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ M5 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.7A Pulsed drain current: 68A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 179mΩ Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STL21N65M5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 68A Power dissipation: 125W Case: PowerFLAT 8x8 Gate-source voltage: ±25V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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1.5KE6V8CA | STMicroelectronics |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 6.8V; 143A; bidirectional; DO201; Ammo Pack; 1.5kW Type of diode: TVS Breakdown voltage: 6.8V Semiconductor structure: bidirectional Case: DO201 Mounting: THT Kind of package: Ammo Pack Peak pulse power dissipation: 1.5kW Max. forward impulse current: 143A Max. off-state voltage: 5.8V Leakage current: 1mA |
на замовлення 2125 шт: термін постачання 14-30 дні (днів) |
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STF12N50DM2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 16nC Drain current: 11A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±25V On-state resistance: 0.35Ω Pulsed drain current: 44A |
на замовлення 418 шт: термін постачання 14-30 дні (днів) |
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STF12N50M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 85W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 15nC Drain current: 10A Kind of channel: enhancement Drain-source voltage: 500V Gate-source voltage: ±25V On-state resistance: 0.38Ω Pulsed drain current: 40A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STEVAL-ISA193V2 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: adapter; Comp: STCH02; 5V; 3A; 15W; 90÷264VAC; 44x35x15mm Type of development kit: adapter Components: STCH02 Connection: USB Output voltage: 5V Output current: 3A Power: 15W Operating voltage: 90...264V AC Dimensions: 44x35x15mm Kit contents: prototype board Additional functions: AC/DC converter |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| VIPER222XSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 30kHz; SSOP10; flyback; Uin: 4.5÷30V; Usup: 30V Type of integrated circuit: PMIC Topology: flyback Case: SSOP10 Mounting: SMD Operating temperature: -40...150°C Frequency: 30kHz Supply voltage: 30V Input voltage: 4.5...30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| VIPER222LSTR | STMicroelectronics |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; 60kHz; SSOP10; flyback; 4.5÷30V Type of integrated circuit: PMIC Topology: flyback Case: SSOP10 Mounting: SMD Operating temperature: -40...150°C Frequency: 60kHz Input voltage: 4.5...30V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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STM32F100VDT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C Kind of package: in-tray Number of inputs/outputs: 80 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of architecture: Cortex M3 Clock frequency: 24MHz Kind of core: 32-bit Memory: 32kB SRAM; 384kB FLASH Number of 12bit D/A converters: 2 Number of 16bit timers: 11 Number of 12bit A/D converters: 16 Case: LQFP100 Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3 Family: STM32F1 Mounting: SMD Supply voltage: 2...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||
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STM32F100VDT6BTR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C Kind of package: reel; tape Number of inputs/outputs: 80 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...85°C Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of architecture: Cortex M3 Clock frequency: 24MHz Kind of core: 32-bit Memory: 32kB SRAM; 384kB FLASH Number of 12bit D/A converters: 2 Number of 16bit timers: 11 Number of 12bit A/D converters: 16 Case: LQFP100 Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3 Family: STM32F1 Mounting: SMD Supply voltage: 2...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STM32F100VDT7B | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; STM32F1 Kind of package: in-tray Number of inputs/outputs: 80 Type of integrated circuit: STM32 ARM microcontroller Operating temperature: -40...105°C Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog Kind of architecture: Cortex M3 Clock frequency: 24MHz Kind of core: 32-bit Memory: 32kB SRAM; 384kB FLASH Number of 12bit D/A converters: 2 Number of 16bit timers: 11 Number of 12bit A/D converters: 16 Case: LQFP100 Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3 Family: STM32F1 Mounting: SMD Supply voltage: 2...3.6V DC |
товару немає в наявності |
Мінімальне замовлення: 90 шт В кошику од. на суму грн. | ||||||||||||||
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STCS1APHR | STMicroelectronics |
Category: LED driversDescription: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V Mounting: SMD Input voltage: 4.5...40V Output current: 1.5A Type of integrated circuit: driver Operating temperature: -40...150°C Integrated circuit features: PWM Application: automotive industry Kind of package: reel; tape Case: PowerSO8 Kind of integrated circuit: LED driver Number of channels: 1 |
на замовлення 2337 шт: термін постачання 14-30 дні (днів) |
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LD29080DT33R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD Mounting: SMD Tolerance: ±1% Operating temperature: -40...125°C Output current: 0.8A Type of integrated circuit: voltage regulator Voltage drop: 0.7V Output voltage: 3.3V Kind of package: reel; tape Case: DPAK Number of channels: 1 Kind of voltage regulator: fixed; LDO; linear Manufacturer series: LD29080 Input voltage: 4.3...8.8V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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STN83003 | STMicroelectronics |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1.5A Power dissipation: 1.6W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
на замовлення 1407 шт: термін постачання 14-30 дні (днів) |
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STPS3L60UY | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.61V Max. forward impulse current: 100A Kind of package: reel; tape Application: automotive industry |
на замовлення 1648 шт: термін постачання 14-30 дні (днів) |
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| STPS3L60UFN | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel; tape Max. load current: 10A Leakage current: 30mA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| STPS3L60UF | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB flat Mounting: SMD Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.79V Max. forward impulse current: 100A Kind of package: reel; tape Max. load current: 10A Leakage current: 30mA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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STL56N3LLH5 | STMicroelectronics |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 56A Pulsed drain current: 224A Power dissipation: 62.5W Case: PowerFLAT 5x6 On-state resistance: 9mΩ Mounting: SMD Gate charge: 6.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1994 шт: термін постачання 14-30 дні (днів) |
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STPS20L15D | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.28V Type of diode: Schottky rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 15V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.28V Kind of package: tube Max. forward impulse current: 310A Heatsink thickness: 1.23...1.32mm Max. load current: 30A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STPS20L15G-TR | STMicroelectronics |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 15V; 20A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 15V Load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.52V Kind of package: reel; tape Max. forward impulse current: 310A Max. load current: 30A Leakage current: 500mA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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STP13N65M2 | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.43Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P0102MN 5AA4 | STMicroelectronics |
Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; SOT223; SMD; Ifsm: 8A Max. off-state voltage: 0.6kV Load current: 0.5A Max. load current: 0.8A Kind of package: reel; tape Case: SOT223 Type of thyristor: thyristor Mounting: SMD Max. forward impulse current: 8A Gate current: 0.2mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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STF3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 361 шт: термін постачання 14-30 дні (днів) |
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STP3NK80Z | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.57A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 4.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 493 шт: термін постачання 14-30 дні (днів) |
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M48T18-100PC1 | STMicroelectronics |
Category: RTC circuitsDescription: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.5÷5.5V Mounting: THT Trade name: TIMEKEEPER® Access time: 100ns Type of integrated circuit: RTC circuit DC supply current: 80mA Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 64kb SRAM Memory organisation: 8kx8bit Time keeping current: 3mA Case: PCDIP28 Interface: parallel Operating voltage: 4.5...5.5V Kind of memory: NV SRAM |
на замовлення 16 шт: термін постачання 14-30 дні (днів) |
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M48T08-100PC1 | STMicroelectronics |
Category: RTC circuitsDescription: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.75÷5.5V Mounting: THT Trade name: TIMEKEEPER® Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1 Access time: 100ns Type of integrated circuit: RTC circuit DC supply current: 80mA Clock format: HH:MM:SS (24h) Date format: YY-MM-DD-dd Memory: 64kb SRAM Memory organisation: 8kx8bit Time keeping current: 3mA Case: PCDIP28 Interface: parallel Operating voltage: 4.75...5.5V Kind of memory: NV SRAM |
на замовлення 101 шт: термін постачання 14-30 дні (днів) |
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STM32F401VDT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 84MHz; LQFP100; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 84MHz Mounting: SMD Number of inputs/outputs: 81 Case: LQFP100 Supply voltage: 1.7...3.6V DC Interface: I2C x3; I2S x2; SDIO; SPI x4; USART; USB OTG Kind of architecture: Cortex M4 Memory: 96kB SRAM; 384kB FLASH Family: STM32F4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMTPA100 | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 90V; SMB; SMD; 50A; bidirectional; Trisil™ Max. forward impulse current: 50A Technology: Trisil™ Application: telecommunication Max. off-state voltage: 90V Breakover voltage: 100...133V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SMB Type of thyristor: TSS Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMTPA120 | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 108V; SMB; SMD; 50A; bidirectional; Trisil™ Max. forward impulse current: 50A Technology: Trisil™ Application: telecommunication Max. off-state voltage: 108V Breakover voltage: 120...160V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SMB Type of thyristor: TSS Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMTPA130 | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 117V; SMB; SMD; 50A; bidirectional; Trisil™ Max. forward impulse current: 50A Technology: Trisil™ Application: telecommunication Max. off-state voltage: 117V Breakover voltage: 130...173V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SMB Type of thyristor: TSS Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMTPA180 | STMicroelectronics |
Category: Thyristors - othersDescription: Thyristor: TSS; Urmax: 162V; SMB; SMD; 50A; bidirectional; Trisil™ Max. forward impulse current: 50A Technology: Trisil™ Application: telecommunication Max. off-state voltage: 162V Breakover voltage: 180...240V Kind of package: reel; tape Semiconductor structure: bidirectional Case: SMB Type of thyristor: TSS Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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LD29080DT50R | STMicroelectronics |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1% Tolerance: ±1% Mounting: SMD Kind of voltage regulator: fixed; LDO; linear Input voltage: 2.5...13V Manufacturer series: LD29080 Output current: 0.8A Type of integrated circuit: voltage regulator Voltage drop: 0.7V Operating temperature: -40...125°C Output voltage: 5V Kind of package: reel; tape Case: DPAK Number of channels: 1 |
на замовлення 1590 шт: термін постачання 14-30 дні (днів) |
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STPS60SM200CW | STMicroelectronics |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.64V Max. forward impulse current: 0.5kA Kind of package: tube |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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STTH6002CPI | STMicroelectronics |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TOP3I; 22ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 330A Case: TOP3I Max. forward voltage: 0.75V Reverse recovery time: 22ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STTH6006TV1 | STMicroelectronics |
Category: Diode modulesDescription: Module: diode; double independent; 600V; If: 30Ax2; ISOTOP; screw Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: double independent Max. forward impulse current: 210A Case: ISOTOP Max. forward voltage: 1.1V Reverse recovery time: 50ns Max. load current: 60A Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||||
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STP36NF06L | STMicroelectronics |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 21A Power dissipation: 70W Case: TO220-3 Gate-source voltage: ±18V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 153 шт: термін постачання 14-30 дні (днів) |
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SM6T150CA | STMicroelectronics |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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SM6T150A | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 2.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 795 шт: термін постачання 14-30 дні (днів) |
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TDE1897RFPT | STMicroelectronics |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.5A; Ch: 1; SMD; SO20; reel,tape Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 0.5A Number of channels: 1 Mounting: SMD Case: SO20 Kind of package: reel; tape Operating temperature: -25...85°C Supply voltage: 18...35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| NUCLEO-WL55JC1 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4 Type of development kit: STM32 Components: STM32WL55JC Interface: USB Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro Kind of architecture: Cortex M4 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kit contents: base board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| NUCLEO-WL55JC2 | STMicroelectronics |
Category: STM development kitsDescription: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4 Type of development kit: STM32 Components: STM32WL55JC Interface: USB Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro Kind of architecture: Cortex M4 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kit contents: base board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ70A-TR | STMicroelectronics |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 77.8÷81.9V; 27A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 70V Breakdown voltage: 77.8...81.9V Max. forward impulse current: 27A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2362 шт: термін постачання 14-30 дні (днів) |
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STM32F469IIT6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; LQFP176; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 131 Case: LQFP176 Supply voltage: 1.7...3.6V DC Interface: CAN x2; Ethernet; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 384kB SRAM; 2MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| STM32F469NIH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; TFBGA216; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 161 Case: TFBGA216 Supply voltage: 1.7...3.6V DC Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; SAI; USART; USB; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM Memory: 384kB SRAM; 2MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Family: STM32F4 Kind of core: 32-bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| STM32F469AEH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 128 Case: UFBGA169 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 384kB SRAM; 512kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 416 шт В кошику од. на суму грн. | |||||||||||||||
| STM32F469AGH6 | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 128 Case: UFBGA169 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 384kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: in-tray Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 416 шт В кошику од. на суму грн. | |||||||||||||||
| STM32F469AGH6TR | STMicroelectronics |
Category: ST microcontrollersDescription: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 180MHz Mounting: SMD Number of inputs/outputs: 128 Case: UFBGA169 Supply voltage: 1.7...3.6V DC Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 384kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape Kind of core: 32-bit |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| TS472IQT |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; QFN24; 2.2÷5.5VDC; 2.4mA
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: QFN24
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
товару немає в наявності
В кошику
од. на суму грн.
| TS472EIJT |
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Виробник: STMicroelectronics
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; Ch: 2; Amp.class: AB; flip chip12; 2.2÷5.5VDC
Type of integrated circuit: audio amplifier
Number of channels: 2
Mounting: SMD
Voltage supply range: 2.2...5.5V DC
Case: flip chip12
Operating temperature: -40...85°C
Quiescent current: 2.4mA
Amplifier class: AB
товару немає в наявності
В кошику
од. на суму грн.
| TSC2010HYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.9V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
| TSC2010IDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
| TSC2012HYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 490kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 490kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 2.8V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
| TSC2010IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 820kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 820kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 7.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
| TSC2011HYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 750kHz; Ch: 1; 2.7÷5.5VDC; SO8
Type of integrated circuit: instrumentation amplifier
Bandwidth: 750kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.7...5.5V DC
Case: SO8
Operating temperature: -20...70°C
Slew rate: 3.5V/μs
Quiescent current: 2.4mA
Input offset voltage: 4.5mV
Application: automotive industry
Kind of integrated circuit: current sense
товару немає в наявності
В кошику
од. на суму грн.
| STF8N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; Idm: 24A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 16.5nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 24A
на замовлення 127 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 211.77 грн |
| 10+ | 122.17 грн |
| 50+ | 109.62 грн |
| STF8NK100Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 4.3A; 40W; TO220FP; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4.3A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
на замовлення 43 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 221.68 грн |
| 5+ | 187.44 грн |
| 10+ | 180.74 грн |
| 25+ | 173.21 грн |
| STF80N900K6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; 21.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 21.5W
Case: TO220FP
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 7nC
Kind of channel: enhancement
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.06 грн |
| 10+ | 106.27 грн |
| 50+ | 97.90 грн |
| 100+ | 93.72 грн |
| STF80N240K6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STTH15R06FP |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; Ifsm: 150A; TO220FPAC; tube; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: TO220FPAC
Kind of package: tube
Max. forward voltage: 2.9V
Max. load current: 30A
Leakage current: 60µA
Reverse recovery time: 50ns
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 159.50 грн |
| 10+ | 73.64 грн |
| 50+ | 64.43 грн |
| STF21N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 10.7A; 30W; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 37 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 382.09 грн |
| 10+ | 225.93 грн |
| STP21N65M5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M5; unipolar; 650V; 10.7A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ M5
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.7A
Pulsed drain current: 68A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 179mΩ
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhancement
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| STL21N65M5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 68A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 125W
Case: PowerFLAT 8x8
Gate-source voltage: ±25V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| 1.5KE6V8CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; Ammo Pack; 1.5kW
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 143A
Max. off-state voltage: 5.8V
Leakage current: 1mA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; Ammo Pack; 1.5kW
Type of diode: TVS
Breakdown voltage: 6.8V
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Kind of package: Ammo Pack
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 143A
Max. off-state voltage: 5.8V
Leakage current: 1mA
на замовлення 2125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.23 грн |
| 250+ | 19.75 грн |
| 600+ | 17.91 грн |
| 1200+ | 16.48 грн |
| 1800+ | 15.65 грн |
| STF12N50DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 25W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 25W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 16nC
Drain current: 11A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.35Ω
Pulsed drain current: 44A
на замовлення 418 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.91 грн |
| 10+ | 99.58 грн |
| 25+ | 87.86 грн |
| 50+ | 84.51 грн |
| STF12N50M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10A; Idm: 40A; 85W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 85W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 15nC
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±25V
On-state resistance: 0.38Ω
Pulsed drain current: 40A
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| STEVAL-ISA193V2 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: adapter; Comp: STCH02; 5V; 3A; 15W; 90÷264VAC; 44x35x15mm
Type of development kit: adapter
Components: STCH02
Connection: USB
Output voltage: 5V
Output current: 3A
Power: 15W
Operating voltage: 90...264V AC
Dimensions: 44x35x15mm
Kit contents: prototype board
Additional functions: AC/DC converter
Category: STM development kits
Description: Dev.kit: adapter; Comp: STCH02; 5V; 3A; 15W; 90÷264VAC; 44x35x15mm
Type of development kit: adapter
Components: STCH02
Connection: USB
Output voltage: 5V
Output current: 3A
Power: 15W
Operating voltage: 90...264V AC
Dimensions: 44x35x15mm
Kit contents: prototype board
Additional functions: AC/DC converter
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| VIPER222XSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; flyback; Uin: 4.5÷30V; Usup: 30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 30kHz
Supply voltage: 30V
Input voltage: 4.5...30V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 30kHz; SSOP10; flyback; Uin: 4.5÷30V; Usup: 30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 30kHz
Supply voltage: 30V
Input voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| VIPER222LSTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; flyback; 4.5÷30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 4.5...30V
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; 60kHz; SSOP10; flyback; 4.5÷30V
Type of integrated circuit: PMIC
Topology: flyback
Case: SSOP10
Mounting: SMD
Operating temperature: -40...150°C
Frequency: 60kHz
Input voltage: 4.5...30V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| STM32F100VDT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
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Мінімальне замовлення: 90 шт
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| STM32F100VDT6BTR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: reel; tape
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Kind of package: reel; tape
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...85°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| STM32F100VDT7B |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; STM32F1
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 24MHz; LQFP100; 2÷3.6VDC; STM32F1
Kind of package: in-tray
Number of inputs/outputs: 80
Type of integrated circuit: STM32 ARM microcontroller
Operating temperature: -40...105°C
Integrated circuit features: CRC; DMA; PdR; PoR; PVD; PWM; RTC; watchdog
Kind of architecture: Cortex M3
Clock frequency: 24MHz
Kind of core: 32-bit
Memory: 32kB SRAM; 384kB FLASH
Number of 12bit D/A converters: 2
Number of 16bit timers: 11
Number of 12bit A/D converters: 16
Case: LQFP100
Interface: HDMI CEC; I2C x2; SPI x3; UART x2; USART x3
Family: STM32F1
Mounting: SMD
Supply voltage: 2...3.6V DC
товару немає в наявності
Мінімальне замовлення: 90 шт
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| STCS1APHR |
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Виробник: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Mounting: SMD
Input voltage: 4.5...40V
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...150°C
Integrated circuit features: PWM
Application: automotive industry
Kind of package: reel; tape
Case: PowerSO8
Kind of integrated circuit: LED driver
Number of channels: 1
Category: LED drivers
Description: IC: driver; LED driver; PowerSO8; 1.5A; Ch: 1; PWM; 4.5÷40V
Mounting: SMD
Input voltage: 4.5...40V
Output current: 1.5A
Type of integrated circuit: driver
Operating temperature: -40...150°C
Integrated circuit features: PWM
Application: automotive industry
Kind of package: reel; tape
Case: PowerSO8
Kind of integrated circuit: LED driver
Number of channels: 1
на замовлення 2337 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 156.80 грн |
| 4+ | 133.05 грн |
| 5+ | 123.84 грн |
| 10+ | 113.80 грн |
| LD29080DT33R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.8A
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Output voltage: 3.3V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD29080
Input voltage: 4.3...8.8V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; DPAK; SMD
Mounting: SMD
Tolerance: ±1%
Operating temperature: -40...125°C
Output current: 0.8A
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Output voltage: 3.3V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: LD29080
Input voltage: 4.3...8.8V
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| STN83003 |
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Виробник: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 1.5A; 1.6W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1.5A
Power dissipation: 1.6W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
на замовлення 1407 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 57.67 грн |
| 13+ | 33.64 грн |
| 100+ | 22.17 грн |
| 200+ | 19.75 грн |
| 500+ | 16.99 грн |
| 1000+ | 15.23 грн |
| STPS3L60UY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.61V
Max. forward impulse current: 100A
Kind of package: reel; tape
Application: automotive industry
на замовлення 1648 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.85 грн |
| 20+ | 21.25 грн |
| 22+ | 19.08 грн |
| 100+ | 14.31 грн |
| 500+ | 12.13 грн |
| 1000+ | 11.05 грн |
| STPS3L60UFN |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 10A
Leakage current: 30mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 10A
Leakage current: 30mA
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| STPS3L60UF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 10A
Leakage current: 30mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB flat; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB flat
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.79V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 10A
Leakage current: 30mA
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| STL56N3LLH5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; Idm: 224A; 62.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Pulsed drain current: 224A
Power dissipation: 62.5W
Case: PowerFLAT 5x6
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 6.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1994 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.82 грн |
| 10+ | 54.31 грн |
| 100+ | 35.81 грн |
| 500+ | 28.03 грн |
| 1000+ | 25.52 грн |
| STPS20L15D |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.28V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.28V
Kind of package: tube
Max. forward impulse current: 310A
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.28V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.28V
Kind of package: tube
Max. forward impulse current: 310A
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
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| STPS20L15G-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 15V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Kind of package: reel; tape
Max. forward impulse current: 310A
Max. load current: 30A
Leakage current: 500mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 15V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 15V
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.52V
Kind of package: reel; tape
Max. forward impulse current: 310A
Max. load current: 30A
Leakage current: 500mA
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Мінімальне замовлення: 1000 шт
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| STP13N65M2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 650V; 6.3A; Idm: 40A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.43Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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| P0102MN 5AA4 |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; SOT223; SMD; Ifsm: 8A
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Mounting: SMD
Max. forward impulse current: 8A
Gate current: 0.2mA
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 0.8A; 0.5A; Igt: 200uA; SOT223; SMD; Ifsm: 8A
Max. off-state voltage: 0.6kV
Load current: 0.5A
Max. load current: 0.8A
Kind of package: reel; tape
Case: SOT223
Type of thyristor: thyristor
Mounting: SMD
Max. forward impulse current: 8A
Gate current: 0.2mA
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| STF3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 361 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 194.65 грн |
| 10+ | 117.99 грн |
| 50+ | 90.37 грн |
| 100+ | 82.00 грн |
| 250+ | 72.80 грн |
| STP3NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.57A; 70W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.57A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 4.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 493 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 162.21 грн |
| 5+ | 101.25 грн |
| 10+ | 90.37 грн |
| 25+ | 78.66 грн |
| 50+ | 71.13 грн |
| 100+ | 65.27 грн |
| M48T18-100PC1 |
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Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.5÷5.5V
Mounting: THT
Trade name: TIMEKEEPER®
Access time: 100ns
Type of integrated circuit: RTC circuit
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Time keeping current: 3mA
Case: PCDIP28
Interface: parallel
Operating voltage: 4.5...5.5V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.5÷5.5V
Mounting: THT
Trade name: TIMEKEEPER®
Access time: 100ns
Type of integrated circuit: RTC circuit
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Time keeping current: 3mA
Case: PCDIP28
Interface: parallel
Operating voltage: 4.5...5.5V
Kind of memory: NV SRAM
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2948.56 грн |
| M48T08-100PC1 |
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Виробник: STMicroelectronics
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.75÷5.5V
Mounting: THT
Trade name: TIMEKEEPER®
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Access time: 100ns
Type of integrated circuit: RTC circuit
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Time keeping current: 3mA
Case: PCDIP28
Interface: parallel
Operating voltage: 4.75...5.5V
Kind of memory: NV SRAM
Category: RTC circuits
Description: IC: RTC circuit; parallel; NV SRAM; 64kbSRAM; PCDIP28; 4.75÷5.5V
Mounting: THT
Trade name: TIMEKEEPER®
Battery/ rechargeable battery: battery Li(CF) BR1225 2,8V x1
Access time: 100ns
Type of integrated circuit: RTC circuit
DC supply current: 80mA
Clock format: HH:MM:SS (24h)
Date format: YY-MM-DD-dd
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Time keeping current: 3mA
Case: PCDIP28
Interface: parallel
Operating voltage: 4.75...5.5V
Kind of memory: NV SRAM
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2175.37 грн |
| 3+ | 1914.56 грн |
| STM32F401VDT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 84MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 84MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C x3; I2S x2; SDIO; SPI x4; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 96kB SRAM; 384kB FLASH
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 84MHz; LQFP100; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 84MHz
Mounting: SMD
Number of inputs/outputs: 81
Case: LQFP100
Supply voltage: 1.7...3.6V DC
Interface: I2C x3; I2S x2; SDIO; SPI x4; USART; USB OTG
Kind of architecture: Cortex M4
Memory: 96kB SRAM; 384kB FLASH
Family: STM32F4
Kind of core: 32-bit
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| SMTPA100 |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 90V
Breakover voltage: 100...133V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 90V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 90V
Breakover voltage: 100...133V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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| SMTPA120 |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 108V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 108V
Breakover voltage: 120...160V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 108V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 108V
Breakover voltage: 120...160V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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| SMTPA130 |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 117V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 117V
Breakover voltage: 130...173V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 117V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 117V
Breakover voltage: 130...173V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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| SMTPA180 |
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Виробник: STMicroelectronics
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 162V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 162V
Breakover voltage: 180...240V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
Category: Thyristors - others
Description: Thyristor: TSS; Urmax: 162V; SMB; SMD; 50A; bidirectional; Trisil™
Max. forward impulse current: 50A
Technology: Trisil™
Application: telecommunication
Max. off-state voltage: 162V
Breakover voltage: 180...240V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Case: SMB
Type of thyristor: TSS
Mounting: SMD
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| LD29080DT50R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...13V
Manufacturer series: LD29080
Output current: 0.8A
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Operating temperature: -40...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; DPAK; SMD; ±1%
Tolerance: ±1%
Mounting: SMD
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 2.5...13V
Manufacturer series: LD29080
Output current: 0.8A
Type of integrated circuit: voltage regulator
Voltage drop: 0.7V
Operating temperature: -40...125°C
Output voltage: 5V
Kind of package: reel; tape
Case: DPAK
Number of channels: 1
на замовлення 1590 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 75.70 грн |
| 10+ | 63.01 грн |
| 25+ | 57.82 грн |
| 100+ | 49.54 грн |
| 250+ | 44.43 грн |
| 500+ | 39.50 грн |
| 1000+ | 35.48 грн |
| STPS60SM200CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 200V; 30Ax2; TO247; Ufmax: 0.64V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.64V
Max. forward impulse current: 0.5kA
Kind of package: tube
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 355.05 грн |
| 10+ | 214.22 грн |
| 30+ | 184.09 грн |
| STTH6002CPI |
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Виробник: STMicroelectronics
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TOP3I; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 330A
Case: TOP3I
Max. forward voltage: 0.75V
Reverse recovery time: 22ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30Ax2; tube; Ifsm: 330A; TOP3I; 22ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 330A
Case: TOP3I
Max. forward voltage: 0.75V
Reverse recovery time: 22ns
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| STTH6006TV1 |
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Виробник: STMicroelectronics
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; ISOTOP; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: ISOTOP
Max. forward voltage: 1.1V
Reverse recovery time: 50ns
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 30Ax2; ISOTOP; screw
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: double independent
Max. forward impulse current: 210A
Case: ISOTOP
Max. forward voltage: 1.1V
Reverse recovery time: 50ns
Max. load current: 60A
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
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Мінімальне замовлення: 10 шт
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| STP36NF06L |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 21A; 70W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Power dissipation: 70W
Case: TO220-3
Gate-source voltage: ±18V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 153 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 111.74 грн |
| 10+ | 67.44 грн |
| 25+ | 59.91 грн |
| 50+ | 54.89 грн |
| 100+ | 49.79 грн |
| SM6T150CA |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 990 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 35.14 грн |
| 27+ | 15.90 грн |
| 30+ | 14.31 грн |
| 50+ | 12.05 грн |
| 100+ | 11.63 грн |
| 500+ | 10.79 грн |
| SM6T150A |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 2.9A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 2.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 795 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.32 грн |
| 31+ | 13.56 грн |
| 33+ | 12.97 грн |
| 50+ | 11.71 грн |
| 100+ | 11.21 грн |
| 250+ | 10.63 грн |
| 500+ | 10.29 грн |
| TDE1897RFPT |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; SMD; SO20; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 18...35V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5A; Ch: 1; SMD; SO20; reel,tape
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 0.5A
Number of channels: 1
Mounting: SMD
Case: SO20
Kind of package: reel; tape
Operating temperature: -25...85°C
Supply voltage: 18...35V
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| NUCLEO-WL55JC1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32WL55JC
Interface: USB
Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32WL55JC
Interface: USB
Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
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| NUCLEO-WL55JC2 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32WL55JC
Interface: USB
Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
Category: STM development kits
Description: Dev.kit: STM32; Comp: STM32WL55JC; Architecture: Cortex M4
Type of development kit: STM32
Components: STM32WL55JC
Interface: USB
Connection: Morpho plug; pin strips; pin strips; SMA; USB B micro
Kind of architecture: Cortex M4
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kit contents: base board
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| SMBJ70A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷81.9V; 27A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...81.9V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 77.8÷81.9V; 27A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 70V
Breakdown voltage: 77.8...81.9V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2362 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 27.94 грн |
| 21+ | 20.58 грн |
| 24+ | 17.66 грн |
| 100+ | 10.79 грн |
| 500+ | 8.87 грн |
| 1000+ | 8.37 грн |
| STM32F469IIT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 131
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; LQFP176; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 131
Case: LQFP176
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; Ethernet; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
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| STM32F469NIH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; TFBGA216; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 161
Case: TFBGA216
Supply voltage: 1.7...3.6V DC
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; SAI; USART; USB; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; TFBGA216; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 161
Case: TFBGA216
Supply voltage: 1.7...3.6V DC
Interface: CAN; EBI; EMI; Ethernet; I2C; IrDA; LIN; SAI; USART; USB; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); DMA; LCD controller; PoR; PWM
Memory: 384kB SRAM; 2MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Family: STM32F4
Kind of core: 32-bit
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| STM32F469AEH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 512kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
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Мінімальне замовлення: 416 шт
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| STM32F469AGH6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: in-tray
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 416 шт
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| STM32F469AGH6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 180MHz; UFBGA169; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 180MHz
Mounting: SMD
Number of inputs/outputs: 128
Case: UFBGA169
Supply voltage: 1.7...3.6V DC
Interface: CAN x2; full duplex; I2C x3; MIPI-DSI; QUAD SPI; SAI; SDIO; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 384kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Kind of core: 32-bit
товару немає в наявності
Мінімальне замовлення: 2500 шт
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