Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170096) > Сторінка 247 з 2835
| Фото | Назва | Виробник | Інформація |
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SMTYF18A | STMicroelectronics |
 Description: TVS DIODE 18VWM SMAPackaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SMA Unidirectional Channels: 1 Power - Peak Pulse: 600W Power Line Protection: No |
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SMTYF5.0A | STMicroelectronics |
Description: TVS DIODE 5VWM 13.4VC SMAFLAT |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
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STAC2932B | STMicroelectronics |
Description: TRANS RF PWR N-CH 300W STAC244B |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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STAC2942B | STMicroelectronics |
Description: RF MOSFET 50V STAC244F Packaging: Tray Package / Case: STAC244F Current Rating (Amps): 40A Frequency: 175MHz Configuration: N-Channel Power - Output: 450W Technology: MOSFET (Metal Oxide) Supplier Device Package: STAC244F Voltage - Rated: 130 V Voltage - Test: 50 V Current - Test: 250 mA |
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STAC3932B | STMicroelectronics |
Description: TRANS RF PWR N-CH 580W STAC244B |
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STB21NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 17A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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STB30NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 27A D2PAK |
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STB6NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 4.6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V |
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STB8NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 7A D2PAK |
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STC20DE90HP | STMicroelectronics |
Description: MOSFET ESBT 900V 20A TO247-4 Packaging: Tube Voltage - Rated: 900V Package / Case: TO-247-4 Current Rating (Amps): 20A Mounting Type: Through Hole Transistor Type: NPN - Emitter Switched Bipolar Applications: General Purpose Supplier Device Package: TO-247-4L HP Part Status: Obsolete |
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STD13NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 11A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STD8NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
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.jpg "STD95N4LF3") |
STD95N4LF3 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STE07DE220 | STMicroelectronics |
Description: TRANS NPN 2200V 7A ISOTOP Packaging: Tube Package / Case: ISOTOP Mounting Type: Chassis Mount Transistor Type: NPN - Emitter Switched Bipolar Operating Temperature: 125°C (TJ) Supplier Device Package: ISOTOP® Part Status: Obsolete Current - Collector (Ic) (Max): 7 A Voltage - Collector Emitter Breakdown (Max): 2200 V Power - Max: 220 W Voltage - Rated: 2200V (2.2kV) Current Rating (Amps): 7A |
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STGB19NC60WT4 | STMicroelectronics |
Description: IGBT 600V 40A 130W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 25ns/90ns Switching Energy: 81µJ (on), 125µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 130 W |
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STGD10NC60HDT4 | STMicroelectronics |
Description: IGBT 600V 20A 62W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 22 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A Supplier Device Package: DPAK Td (on/off) @ 25°C: 14.2ns/72ns Switching Energy: 31.8µJ (on), 95µJ (off) Test Condition: 390V, 5A, 10Ohm, 15V Gate Charge: 19.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 62 W |
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STGE50NC60WD | STMicroelectronics |
Description: IGBT MOD 600V 100A 260W ISOTOP Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A NTC Thermistor: No Supplier Device Package: ISOTOP Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Power - Max: 260 W Current - Collector Cutoff (Max): 500 µA Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V |
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STGP100N30 | STMicroelectronics |
Description: IGBT 330V 90A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A Supplier Device Package: TO-220 Td (on/off) @ 25°C: -/134ns Test Condition: 180V, 25A, 10Ohm, 15V Part Status: Obsolete Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 330 V Power - Max: 250 W |
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STGW40NC60W | STMicroelectronics |
Description: IGBT 600V 70A 250W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-247 Long Leads Td (on/off) @ 25°C: 33ns/168ns Switching Energy: 302µJ (on), 349µJ (off) Test Condition: 390V, 30A, 10Ohm, 15V Gate Charge: 126 nC Part Status: Obsolete Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 230 A Power - Max: 250 W |
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STK38N3LLH5 | STMicroelectronics |
Description: MOSFET N-CH 30V 38A POLARPAK |
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STL25N15F3 | STMicroelectronics |
Description: MOSFET N-CH 150V 25A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 57mOhm @ 3A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V |
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.jpg "STLD128DNT4") |
STLD128DNT4 | STMicroelectronics |
Description: TRANS NPN 400V 4A DPAK |
товару немає в наявності |
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STP16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
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STP200N4F3 | STMicroelectronics |
Description: MOSFET N-CH 40V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V |
товару немає в наявності |
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STP30NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 27A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V |
товару немає в наявності |
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STP42N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
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STP7N95K3 | STMicroelectronics |
Description: MOSFET N-CH 950V 7.2A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V |
на замовлення 406 шт: термін постачання 21-31 дні (днів) |
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STP8NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V |
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STW2040 | STMicroelectronics |
Description: TRANS NPN 500V 20A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A Current - Collector Cutoff (Max): 250µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V Supplier Device Package: TO-247-3 Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 500 V Power - Max: 125 W |
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STW30NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 27A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V |
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STW42N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 33A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V |
на замовлення 490 шт: термін постачання 21-31 дні (днів) |
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STW70N10F4 | STMicroelectronics |
Description: MOSFET N-CH 100V 65A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
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STW7N95K3 | STMicroelectronics |
Description: MOSFET N-CH 950V 7.2A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V |
на замовлення 590 шт: термін постачання 21-31 дні (днів) |
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STX13003G | STMicroelectronics |
Description: TRANS NPN 400V 1A TO-92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STX13005G | STMicroelectronics |
Description: TRANS NPN 400V 3A TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.8 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STX690A | STMicroelectronics |
Description: TRANS NPN 30V 3A TO-92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 3A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 900 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ACST12-7CG-TR | STMicroelectronics |
Description: TRIAC 700V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 50 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: D2PAK Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ACST12-7SG-TR | STMicroelectronics |
Description: TRIAC SENS GATE 700V 12A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 30 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Voltage - Gate Trigger (Vgt) (Max): 1 V Supplier Device Package: D2PAK Part Status: Obsolete Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DSL01-010SC5 | STMicroelectronics |
Description: THYRISTOR 10.5V 30A SC74A Packaging: Cut Tape (CT) Capacitance: 17pF Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 25V Voltage - Off State: 10.5V Supplier Device Package: SOT-23-5 Current - Hold (Ih): 100 mA Current - Peak Pulse (10/1000µs): 18 A Current - Peak Pulse (8/20µs): 30 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DSL01-024SC5 | STMicroelectronics |
Description: THYRISTOR 24V 30A SOT23-5 |
на замовлення 2044 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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EMIF06-MSD02N16 | STMicroelectronics |
Description: FILTER RC(PI) 45 OHMS ESD SMD Packaging: Cut Tape (CT) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 45Ohms, C = 20pF (Total) Height: 0.022" (0.55mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 45 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
на замовлення 25573 шт: термін постачання 21-31 дні (днів) |
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ESDALC6V1-1U2 | STMicroelectronics |
Description: TVS DIODE 3VWM ST0201 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 0201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active |
на замовлення 75426 шт: термін постачання 21-31 дні (днів) |
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ETP01-1621RL | STMicroelectronics |
Description: THYRISTOR 16V 100A 8-SOIC Packaging: Cut Tape (CT) Capacitance: 16pF Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 3 Voltage - Breakover: 25V Voltage - Off State: 16V Supplier Device Package: 8-SOIC Part Status: Active Current - Hold (Ih): 30 mA Current - Peak Pulse (8/20µs): 100 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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HDMIULC6-2P6 | STMicroelectronics |
Description: TVS DIODE 5VWM 17VC SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Type: Steering (Rail to Rail) Applications: Ethernet, HDMI Capacitance @ Frequency: 0.85pF @ 825MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOT-666 Unidirectional Channels: 2 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 17V Power Line Protection: Yes |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMA6F12AVCL | STMicroelectronics |
Description: TVS DIODE 12VWM 22.9VC SMAFLAT Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 157A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SMAflat Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.2V Voltage - Clamping (Max) @ Ipp: 22.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMA6F13A-TR | STMicroelectronics |
Description: TVS DIODE 13V 23.9V SMAFLAT |
на замовлення 3124 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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SMA6F5.0A-TR | STMicroelectronics |
Description: TVS DIODE 5VWM 13.4VC SMAFLAT Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 298A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SMAflat Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Voltage - Clamping (Max) @ Ipp: 13.4V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMTYF12A | STMicroelectronics |
Description: TVS DIODE 12VWM 22.9VC SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 157A (8/20µs) Voltage - Reverse Standoff (Typ): 12V Supplier Device Package: SMA Unidirectional Channels: 1 Voltage - Breakdown (Min): 13.2V Voltage - Clamping (Max) @ Ipp: 22.9V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMTYF18A | STMicroelectronics |
Description: TVS DIODE 18VWM SMA Packaging: Cut Tape (CT) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 175°C (TJ) Applications: General Purpose Voltage - Reverse Standoff (Typ): 18V Supplier Device Package: SMA Unidirectional Channels: 1 Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SMTYF5.0A | STMicroelectronics |
Description: TVS DIODE 5VWM 13.4VC SMAFLAT |
на замовлення 8403 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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START499D | STMicroelectronics |
Description: TRANS RF NPN 4.5V 1A SOT-89 |
на замовлення 4150 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STB150NF04 | STMicroelectronics |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB21NK50Z | STMicroelectronics |
Description: MOSFET N-CH 500V 17A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB30NM50N | STMicroelectronics |
Description: MOSFET N-CH 500V 27A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB6NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 4.6A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB8NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 7A D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD13NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V |
на замовлення 2992 шт: термін постачання 21-31 дні (днів) |
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
на замовлення 7743 шт: термін постачання 21-31 дні (днів) |
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STD70N10F4 | STMicroelectronics |
Description: MOSFET N-CH 100V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
на замовлення 1403 шт: термін постачання 21-31 дні (днів) |
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| SMTYF18A |
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Виробник: STMicroelectronics
Description: TVS DIODE 18VWM SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMA
Unidirectional Channels: 1
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 18VWM SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMA
Unidirectional Channels: 1
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SMTYF5.0A |
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Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
на замовлення 9 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STAC2932B |
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Виробник: STMicroelectronics
Description: TRANS RF PWR N-CH 300W STAC244B
Description: TRANS RF PWR N-CH 300W STAC244B
на замовлення 16 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STAC2942B |
|
Виробник: STMicroelectronics
Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 450W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: RF MOSFET 50V STAC244F
Packaging: Tray
Package / Case: STAC244F
Current Rating (Amps): 40A
Frequency: 175MHz
Configuration: N-Channel
Power - Output: 450W
Technology: MOSFET (Metal Oxide)
Supplier Device Package: STAC244F
Voltage - Rated: 130 V
Voltage - Test: 50 V
Current - Test: 250 mA
товару немає в наявності
В кошику
од. на суму грн.
| STAC3932B |
|
Виробник: STMicroelectronics
Description: TRANS RF PWR N-CH 580W STAC244B
Description: TRANS RF PWR N-CH 580W STAC244B
товару немає в наявності
В кошику
од. на суму грн.
| STB21NK50Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 500V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STB30NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 27A D2PAK
Description: MOSFET N-CH 500V 27A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STB6NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Description: MOSFET N-CH 600V 4.6A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STB8NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A D2PAK
Description: MOSFET N-CH 600V 7A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STC20DE90HP |
|
Виробник: STMicroelectronics
Description: MOSFET ESBT 900V 20A TO247-4
Packaging: Tube
Voltage - Rated: 900V
Package / Case: TO-247-4
Current Rating (Amps): 20A
Mounting Type: Through Hole
Transistor Type: NPN - Emitter Switched Bipolar
Applications: General Purpose
Supplier Device Package: TO-247-4L HP
Part Status: Obsolete
Description: MOSFET ESBT 900V 20A TO247-4
Packaging: Tube
Voltage - Rated: 900V
Package / Case: TO-247-4
Current Rating (Amps): 20A
Mounting Type: Through Hole
Transistor Type: NPN - Emitter Switched Bipolar
Applications: General Purpose
Supplier Device Package: TO-247-4L HP
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| STD13NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 87.50 грн |
| STD16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 96.72 грн |
| STD8NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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| STD95N4LF3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Description: MOSFET N-CH 40V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 63.30 грн |
| 5000+ | 58.70 грн |
| STE07DE220 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 2200V 7A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Transistor Type: NPN - Emitter Switched Bipolar
Operating Temperature: 125°C (TJ)
Supplier Device Package: ISOTOP®
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 2200 V
Power - Max: 220 W
Voltage - Rated: 2200V (2.2kV)
Current Rating (Amps): 7A
Description: TRANS NPN 2200V 7A ISOTOP
Packaging: Tube
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Transistor Type: NPN - Emitter Switched Bipolar
Operating Temperature: 125°C (TJ)
Supplier Device Package: ISOTOP®
Part Status: Obsolete
Current - Collector (Ic) (Max): 7 A
Voltage - Collector Emitter Breakdown (Max): 2200 V
Power - Max: 220 W
Voltage - Rated: 2200V (2.2kV)
Current Rating (Amps): 7A
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| STGB19NC60WT4 |
|
Виробник: STMicroelectronics
Description: IGBT 600V 40A 130W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 130 W
Description: IGBT 600V 40A 130W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 25ns/90ns
Switching Energy: 81µJ (on), 125µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 130 W
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од. на суму грн.
| STGD10NC60HDT4 |
|
Виробник: STMicroelectronics
Description: IGBT 600V 20A 62W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 14.2ns/72ns
Switching Energy: 31.8µJ (on), 95µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
Description: IGBT 600V 20A 62W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 22 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 5A
Supplier Device Package: DPAK
Td (on/off) @ 25°C: 14.2ns/72ns
Switching Energy: 31.8µJ (on), 95µJ (off)
Test Condition: 390V, 5A, 10Ohm, 15V
Gate Charge: 19.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 62 W
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| STGE50NC60WD |
|
Виробник: STMicroelectronics
Description: IGBT MOD 600V 100A 260W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
Description: IGBT MOD 600V 100A 260W ISOTOP
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
NTC Thermistor: No
Supplier Device Package: ISOTOP
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 260 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 4.7 nF @ 25 V
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| STGP100N30 |
|
Виробник: STMicroelectronics
Description: IGBT 330V 90A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/134ns
Test Condition: 180V, 25A, 10Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 250 W
Description: IGBT 330V 90A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 50A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: -/134ns
Test Condition: 180V, 25A, 10Ohm, 15V
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 330 V
Power - Max: 250 W
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| STGW40NC60W |
|
Виробник: STMicroelectronics
Description: IGBT 600V 70A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 33ns/168ns
Switching Energy: 302µJ (on), 349µJ (off)
Test Condition: 390V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
Description: IGBT 600V 70A 250W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-247 Long Leads
Td (on/off) @ 25°C: 33ns/168ns
Switching Energy: 302µJ (on), 349µJ (off)
Test Condition: 390V, 30A, 10Ohm, 15V
Gate Charge: 126 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 230 A
Power - Max: 250 W
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| STK38N3LLH5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 38A POLARPAK
Description: MOSFET N-CH 30V 38A POLARPAK
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| STL25N15F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 150V 25A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Description: MOSFET N-CH 150V 25A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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| STLD128DNT4 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 4A DPAK
Description: TRANS NPN 400V 4A DPAK
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| STP16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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| STP200N4F3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Description: MOSFET N-CH 40V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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| STP30NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V
Description: MOSFET N-CH 500V 27A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V
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| STP42N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
Description: MOSFET N-CH 650V 33A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
на замовлення 241 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 790.72 грн |
| 50+ | 426.52 грн |
| 100+ | 409.56 грн |
| STP7N95K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 7.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V
Description: MOSFET N-CH 950V 7.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V
на замовлення 406 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 251.66 грн |
| 10+ | 159.47 грн |
| 100+ | 112.29 грн |
| STP8NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
Description: MOSFET N-CH 600V 7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 560 pF @ 50 V
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| STW2040 |
|
Виробник: STMicroelectronics
Description: TRANS NPN 500V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 125 W
Description: TRANS NPN 500V 20A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1.2A, 6A
Current - Collector Cutoff (Max): 250µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 6A, 5V
Supplier Device Package: TO-247-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 125 W
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| STW30NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V
Description: MOSFET N-CH 500V 27A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 13.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 50 V
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| STW42N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
Description: MOSFET N-CH 650V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 79mOhm @ 16.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 100 V
на замовлення 490 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 654.96 грн |
| 30+ | 388.05 грн |
| 120+ | 383.74 грн |
| STW70N10F4 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET N-CH 100V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
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| STW7N95K3 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 7.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V
Description: MOSFET N-CH 950V 7.2A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.6A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1031 pF @ 100 V
на замовлення 590 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 467.60 грн |
| 30+ | 357.04 грн |
| 120+ | 306.05 грн |
| 510+ | 255.30 грн |
| STX13003G |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 1A TO-92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
Description: TRANS NPN 400V 1A TO-92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 1.5A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 500mA, 2V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 1.5 W
товару немає в наявності
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| STX13005G |
|
Виробник: STMicroelectronics
Description: TRANS NPN 400V 3A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
Description: TRANS NPN 400V 3A TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 750mA, 3A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
товару немає в наявності
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| STX690A |
|
Виробник: STMicroelectronics
Description: TRANS NPN 30V 3A TO-92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 900 mW
Description: TRANS NPN 30V 3A TO-92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 100mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 900 mW
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| ACST12-7CG-TR |
|
Виробник: STMicroelectronics
Description: TRIAC 700V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 700 V
Description: TRIAC 700V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 700 V
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| ACST12-7SG-TR |
|
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 700V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 700 V
Description: TRIAC SENS GATE 700V 12A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 30 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Voltage - Gate Trigger (Vgt) (Max): 1 V
Supplier Device Package: D2PAK
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 700 V
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| DSL01-010SC5 |
|
Виробник: STMicroelectronics
Description: THYRISTOR 10.5V 30A SC74A
Packaging: Cut Tape (CT)
Capacitance: 17pF
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 25V
Voltage - Off State: 10.5V
Supplier Device Package: SOT-23-5
Current - Hold (Ih): 100 mA
Current - Peak Pulse (10/1000µs): 18 A
Current - Peak Pulse (8/20µs): 30 A
Description: THYRISTOR 10.5V 30A SC74A
Packaging: Cut Tape (CT)
Capacitance: 17pF
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 25V
Voltage - Off State: 10.5V
Supplier Device Package: SOT-23-5
Current - Hold (Ih): 100 mA
Current - Peak Pulse (10/1000µs): 18 A
Current - Peak Pulse (8/20µs): 30 A
товару немає в наявності
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| DSL01-024SC5 |
|
Виробник: STMicroelectronics
Description: THYRISTOR 24V 30A SOT23-5
Description: THYRISTOR 24V 30A SOT23-5
на замовлення 2044 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| EMIF06-MSD02N16 |
|
Виробник: STMicroelectronics
Description: FILTER RC(PI) 45 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 45Ohms, C = 20pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RC(PI) 45 OHMS ESD SMD
Packaging: Cut Tape (CT)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 45Ohms, C = 20pF (Total)
Height: 0.022" (0.55mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 45
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
на замовлення 25573 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 75.42 грн |
| 10+ | 58.94 грн |
| 25+ | 54.37 грн |
| 50+ | 48.00 грн |
| 100+ | 45.14 грн |
| 250+ | 41.63 грн |
| 500+ | 38.52 грн |
| 1000+ | 36.23 грн |
| ESDALC6V1-1U2 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM ST0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM ST0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 75426 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.82 грн |
| 23+ | 13.61 грн |
| 100+ | 6.06 грн |
| 500+ | 5.67 грн |
| ETP01-1621RL |
|
Виробник: STMicroelectronics
Description: THYRISTOR 16V 100A 8-SOIC
Packaging: Cut Tape (CT)
Capacitance: 16pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Voltage - Breakover: 25V
Voltage - Off State: 16V
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Hold (Ih): 30 mA
Current - Peak Pulse (8/20µs): 100 A
Description: THYRISTOR 16V 100A 8-SOIC
Packaging: Cut Tape (CT)
Capacitance: 16pF
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 3
Voltage - Breakover: 25V
Voltage - Off State: 16V
Supplier Device Package: 8-SOIC
Part Status: Active
Current - Hold (Ih): 30 mA
Current - Peak Pulse (8/20µs): 100 A
товару немає в наявності
В кошику
од. на суму грн.
| HDMIULC6-2P6 |
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17VC SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.85pF @ 825MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-666
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
Description: TVS DIODE 5VWM 17VC SOT666
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.85pF @ 825MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOT-666
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 17V
Power Line Protection: Yes
товару немає в наявності
В кошику
од. на суму грн.
| SMA6F12AVCL |
|
Виробник: STMicroelectronics
Description: TVS DIODE 12VWM 22.9VC SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 22.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 12VWM 22.9VC SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 22.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SMA6F13A-TR |
|
Виробник: STMicroelectronics
Description: TVS DIODE 13V 23.9V SMAFLAT
Description: TVS DIODE 13V 23.9V SMAFLAT
на замовлення 3124 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SMA6F5.0A-TR |
|
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 298A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 298A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SMAflat
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Voltage - Clamping (Max) @ Ipp: 13.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| SMTYF12A |
|
Виробник: STMicroelectronics
Description: TVS DIODE 12VWM 22.9VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 22.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
Description: TVS DIODE 12VWM 22.9VC SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 157A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SMA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.2V
Voltage - Clamping (Max) @ Ipp: 22.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| SMTYF18A |
|
Виробник: STMicroelectronics
Description: TVS DIODE 18VWM SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMA
Unidirectional Channels: 1
Power - Peak Pulse: 600W
Power Line Protection: No
Description: TVS DIODE 18VWM SMA
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: SMA
Unidirectional Channels: 1
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
В кошику
од. на суму грн.
| SMTYF5.0A |
|
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
Description: TVS DIODE 5VWM 13.4VC SMAFLAT
на замовлення 8403 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| START499D |
|
Виробник: STMicroelectronics
Description: TRANS RF NPN 4.5V 1A SOT-89
Description: TRANS RF NPN 4.5V 1A SOT-89
на замовлення 4150 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STB150NF04 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| STB21NK50Z |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 500V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: D2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 119 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| STB30NM50N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 27A D2PAK
Description: MOSFET N-CH 500V 27A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STB6NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
Description: MOSFET N-CH 600V 4.6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 920mOhm @ 2.3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 50 V
товару немає в наявності
В кошику
од. на суму грн.
| STB8NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A D2PAK
Description: MOSFET N-CH 600V 7A D2PAK
товару немає в наявності
В кошику
од. на суму грн.
| STD13NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
Description: MOSFET N-CH 600V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
на замовлення 2992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 197.68 грн |
| 10+ | 148.16 грн |
| 100+ | 117.56 грн |
| 500+ | 96.78 грн |
| STD16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
на замовлення 7743 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 207.21 грн |
| 10+ | 151.75 грн |
| 100+ | 123.72 грн |
| 500+ | 106.98 грн |
| STD70N10F4 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 30A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 1403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 191.33 грн |
| 10+ | 123.69 грн |
| 100+ | 91.90 грн |
| 500+ | 71.38 грн |