Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170085) > Сторінка 2804 з 2835
Фото | Назва | Виробник | Інформація |
Доступність |
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STM32F765ZIT7TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 216MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.7...3.6V DC Interface: CAN x3; DFSDM; Ethernet; I2C x4; QUAD SPI; SAI x 2; SDMMC; SPDIF; SPI x6; UART x4; USART x4; USB OTG Kind of architecture: Cortex M7 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Memory: 512kB SRAM; 2MB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 24 Number of 12bit D/A converters: 2 Number of 16bit timers: 15 Family: STM32F7 Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STP4NK80ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.89A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 41 шт: термін постачання 21-30 дні (днів) |
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STP15N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 950V Drain current: 7.6A Power dissipation: 170W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 30nC Pulsed drain current: 48A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STP150NF04 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BD438 | STMicroelectronics |
![]() Description: Transistor: PNP; bipolar; 45V; 4A; 36W; SOT32 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 4A Power dissipation: 36W Case: SOT32 Mounting: THT Kind of package: tube |
на замовлення 618 шт: термін постачання 21-30 дні (днів) |
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L9616-TR | STMicroelectronics |
![]() Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape Operating temperature: -40...150°C Type of integrated circuit: interface Interface: CAN bus Kind of package: reel; tape Version: ESD Kind of integrated circuit: transceiver Mounting: SMD Case: SO8 Supply voltage: 4.5...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STT6N3LLH6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.75A Pulsed drain current: 24A Power dissipation: 1.6W Case: SOT23-6 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70-06FILM | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SOT23; SMD; 70V; 70mA; reel,tape Type of diode: Schottky rectifying Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: common anode; double Max. forward voltage: 0.75V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 2105 шт: термін постачання 21-30 дні (днів) |
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EMIF01-10005W5 | STMicroelectronics |
![]() Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2 Type of filter: digital Kind of integrated circuit: line terminator Kind of filter: EMI; lowpass Case: SOT323-5L Mounting: SMD Filter order: 2 Number of channels: 2 Application: USB port ESD protection |
на замовлення 1867 шт: термін постачання 21-30 дні (днів) |
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STY60NK30Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 300V Drain current: 37.5A Power dissipation: 450W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 45mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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STY60NM50 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247; ESD Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 37.8A Power dissipation: 560W Case: MAX247 Gate-source voltage: ±30V On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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STW13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMESH5™ |
на замовлення 7 шт: термін постачання 21-30 дні (днів) |
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STF13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: SuperMESH5™ |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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STF23N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 64A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 16A Pulsed drain current: 64A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.28Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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STL3N80K5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2A Pulsed drain current: 8A Power dissipation: 38W Case: PowerFLAT 5x6 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STF3N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 20W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 10A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STP3N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.6A; Idm: 10A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.6A Pulsed drain current: 10A Power dissipation: 60W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: THT Gate charge: 9.5nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STP23N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 64A Power dissipation: 190W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement Technology: MDmesh™ K5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STB13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 190W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD Technology: SuperMesh™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STW23N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 64A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 64A Power dissipation: 190W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STFU13N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 7.6A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD Technology: MDmesh™ K5 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP3NK50Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 9.2A; 45W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 2.3A Power dissipation: 45W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 15nC Pulsed drain current: 9.2A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STM32F334R8T6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; SPI; USART Number of comparators: 3 Clock frequency: 72MHz Number of inputs/outputs: 51 Number of 12bit A/D converters: 2 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Kind of architecture: Cortex M4 Family: STM32F3 Number of 12bit D/A converters: 3 Memory: 16kB SRAM; 64kB FLASH Mounting: SMD Operating temperature: -40...85°C Case: LQFP64 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STEVAL-ILL056V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; base board; Comp: LED5000; 850kHz; 3A Additional functions: DC/DC converter Type of development kit: evaluation Kind of integrated circuit: LED driver Components: LED5000 Frequency: 850kHz Kit contents: base board Operating current: 3A Interface: PWM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STEVAL-ILL046V2 | STMicroelectronics |
![]() Description: Dev.kit: demonstration; base board; 850kHz; 3÷18VDC Additional functions: DC/DC converter Type of development kit: demonstration Kind of integrated circuit: LED driver Operating voltage: 3...18V DC Frequency: 850kHz Kit contents: base board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STEVAL-ISA156V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; prototype board; Comp: L6986; 0.25÷2MHz Additional functions: DC/DC converter Type of development kit: evaluation Components: L6986 Kind of connector: measuring terminal Operating voltage: 4...38V DC Frequency: 0.25...2MHz Kit contents: prototype board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STEVAL-ISA206V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; prototype board; Comp: L6986H; 0.25÷2MHz Output voltage: 38V Output current: 2A Additional functions: DC/DC converter Type of development kit: evaluation Topology: buck Components: L6986H Kind of connector: measuring terminal Operating voltage: 4...38V DC Frequency: 0.25...2MHz Kit contents: prototype board |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STW65N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 29A Pulsed drain current: 140A Case: TO247 On-state resistance: 71mΩ Mounting: THT Gate charge: 65.2nC Kind of package: tube Kind of channel: enhancement Gate-source voltage: ±25V Power dissipation: 368W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STWA65N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A Type of transistor: N-MOSFET Technology: MDmesh™ DM6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 24A Pulsed drain current: 140A Case: TO247 On-state resistance: 71mΩ Mounting: THT Gate charge: 54nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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NUCLEO-U031R8 | STMicroelectronics |
![]() Description: Dev.kit: STM32; base board; Comp: STM32U031R8T6 Type of development kit: STM32 Kit contents: base board Components: STM32U031R8T6 Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors Kind of connector: pin header; pin strips; USB C socket |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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TSV630IQ1T | STMicroelectronics |
![]() Description: IC: operational amplifier; 880kHz; Ch: 1; DFN6; 1.5÷5.5VDC Type of integrated circuit: operational amplifier Mounting: SMT Case: DFN6 Operating temperature: -40...125°C Input offset voltage: 4.5mV Kind of package: reel; tape Input offset current: 0.1nA Voltage supply range: 1.5...5.5V DC Input bias current: 0.1nA Quiescent current: 72µA Slew rate: 0.34V/μs Number of channels: 1 Bandwidth: 880kHz Integrated circuit features: low voltage; rail-to-rail |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
L7987LTR | STMicroelectronics |
![]() Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 2A; SMD Frequency: 250...1500kHz Input voltage: 4.5...61V DC Kind of package: reel; tape Output voltage: 0.8...61V DC Mounting: SMD Kind of integrated circuit: DC/DC converter Topology: buck Number of channels: 1 Type of integrated circuit: driver Case: HTSSOP16 Output current: 2A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
L7987TR | STMicroelectronics |
![]() Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 3A; SMD Frequency: 250...1500kHz Input voltage: 4.5...61V DC Kind of package: reel; tape Output voltage: 0.8...61V DC Mounting: SMD Kind of integrated circuit: DC/DC converter Topology: buck Number of channels: 1 Type of integrated circuit: driver Case: HTSSOP16 Output current: 3A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STF14NM50N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 96 шт: термін постачання 21-30 дні (днів) |
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L7818CV | STMicroelectronics |
![]() Description: IC: voltage regulator; linear,fixed; 18V; 1.5A; TO220AB; THT; L78 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 2V Output voltage: 18V Output current: 1.5A Case: TO220AB Mounting: THT Manufacturer series: L78 Kind of package: tube Operating temperature: 0...125°C Tolerance: ±5% Number of channels: 1 Heatsink thickness: 0.51...0.6mm Input voltage: 21...31V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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L4931CD50-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 5V Output current: 0.3A Case: SO8 Mounting: SMD Manufacturer series: L4931 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...20V |
на замовлення 956 шт: термін постачання 21-30 дні (днів) |
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L4931ABD50-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 5V Output current: 1A Case: SO8 Mounting: SMD Manufacturer series: L4931 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...20V |
на замовлення 4262 шт: термін постачання 21-30 дні (днів) |
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STP42N60M2-EP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ M2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 87mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 136A Gate charge: 55nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STP43N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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LDK320AU50R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.2A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±0.5% Number of channels: 1 Input voltage: 2.5...18V Manufacturer series: LDK320 Voltage drop: 0.35V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LDK320M30R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; SOT23-5; SMD Output voltage: 3V Output current: 0.2A Voltage drop: 0.35V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...18V Kind of package: reel; tape Manufacturer series: LDK320 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: SOT23-5 Tolerance: ±2% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LDK320AM25R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD Output voltage: 2.5V Output current: 0.2A Voltage drop: 0.35V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 2.5...18V Kind of package: reel; tape Manufacturer series: LDK320 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: SOT23-5 Tolerance: ±0.5% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LDK320AM36R | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.35V Output voltage: 3.6V Output current: 0.2A Case: SOT23-5 Mounting: SMD Manufacturer series: LDK320 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±0.5% Number of channels: 1 Input voltage: 2.5...18V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
B-LCDAD-HDMI1 | STMicroelectronics |
![]() Description: Dev.kit: adapter; expansion board; Comp: ADV7533 Interface: DSI; HDMI; MIPI Application: for devices with displays Kit contents: expansion board Kind of connector: HDMI socket; MIPI DSI Type of development kit: adapter Components: ADV7533 Number of add-on connectors: 2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STW32NM50N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BAT30CWFILM | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 2879 шт: термін постачання 21-30 дні (днів) |
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BAT30SWFILM | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: double series Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
на замовлення 3950 шт: термін постачання 21-30 дні (днів) |
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STGAP2SICSACTR | STMicroelectronics |
Category: MOSFET/IGBT drivers Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1 Supply voltage: 3.1...5.25V Output voltage: 1.2kV Output current: -4...4A Type of integrated circuit: driver Impulse rise time: 30ns Pulse fall time: 30ns Number of channels: 1 Integrated circuit features: galvanically isolated Kind of package: reel; tape Kind of integrated circuit: SiC MOSFET gate driver Mounting: SMD Operating temperature: -40...125°C Case: SO8-W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STM32F303VCT6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F303VCT7TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STM32F303VCY6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; WLCSP100; 2÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 78 Case: WLCSP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TS3022IDT | STMicroelectronics |
![]() Description: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA Type of integrated circuit: comparator Kind of comparator: fast Number of comparators: 2 Operating voltage: 1.8...5V Mounting: SMT Case: SO8 Operating temperature: -40...125°C Input offset voltage: 7mV Kind of package: reel; tape Kind of output: push-pull Input offset current: 100nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STP10N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
STGP10NB60S | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
STGP10NB60SD | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SMAJ48CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 23A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1332 шт: термін постачання 21-30 дні (днів) |
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TS922AIDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 1V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.1µA Input offset current: 30nA |
на замовлення 2325 шт: термін постачання 21-30 дні (днів) |
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TS9224IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS9224IYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Input bias current: 90nA Input offset current: 30nA Application: automotive industry Quiescent current: 1.3mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS9222IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
товару немає в наявності |
В кошику од. на суму грн. |
STM32F765ZIT7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DFSDM; Ethernet; I2C x4; QUAD SPI; SAI x 2; SDMMC; SPDIF; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 512kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F7
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 216MHz; LQFP144; 1.7÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 216MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.7...3.6V DC
Interface: CAN x3; DFSDM; Ethernet; I2C x4; QUAD SPI; SAI x 2; SDMMC; SPDIF; SPI x6; UART x4; USART x4; USB OTG
Kind of architecture: Cortex M7
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 512kB SRAM; 2MB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 24
Number of 12bit D/A converters: 2
Number of 16bit timers: 15
Family: STM32F7
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
STP4NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.89A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 41 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 75.74 грн |
7+ | 63.45 грн |
10+ | 55.81 грн |
20+ | 48.16 грн |
STP15N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 950V; 7.6A; Idm: 48A
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 7.6A
Power dissipation: 170W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 30nC
Pulsed drain current: 48A
товару немає в наявності
В кошику
од. на суму грн.
STP150NF04 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 40V; 80A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 320A
товару немає в наявності
В кошику
од. на суму грн.
BD438 |
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Виробник: STMicroelectronics
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: SOT32
Mounting: THT
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 45V; 4A; 36W; SOT32
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 4A
Power dissipation: 36W
Case: SOT32
Mounting: THT
Kind of package: tube
на замовлення 618 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.75 грн |
13+ | 30.43 грн |
15+ | 27.22 грн |
50+ | 20.79 грн |
71+ | 12.69 грн |
194+ | 12.00 грн |
L9616-TR |
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Виробник: STMicroelectronics
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: CAN bus
Kind of package: reel; tape
Version: ESD
Kind of integrated circuit: transceiver
Mounting: SMD
Case: SO8
Supply voltage: 4.5...5.5V DC
Category: CAN interfaces - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SO8; -40÷150°C; reel,tape
Operating temperature: -40...150°C
Type of integrated circuit: interface
Interface: CAN bus
Kind of package: reel; tape
Version: ESD
Kind of integrated circuit: transceiver
Mounting: SMD
Case: SO8
Supply voltage: 4.5...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
STT6N3LLH6 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.75A; Idm: 24A; 1.6W; SOT23-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.75A
Pulsed drain current: 24A
Power dissipation: 1.6W
Case: SOT23-6
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BAS70-06FILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT23; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: common anode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.06 грн |
59+ | 6.57 грн |
68+ | 5.70 грн |
100+ | 3.85 грн |
393+ | 2.26 грн |
1080+ | 2.14 грн |
EMIF01-10005W5 |
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Виробник: STMicroelectronics
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
Category: Filters - integrated circuits
Description: Filter: digital; line terminator; lowpass,EMI; SOT323-5L; Ch: 2
Type of filter: digital
Kind of integrated circuit: line terminator
Kind of filter: EMI; lowpass
Case: SOT323-5L
Mounting: SMD
Filter order: 2
Number of channels: 2
Application: USB port ESD protection
на замовлення 1867 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
24+ | 16.44 грн |
25+ | 15.44 грн |
70+ | 12.84 грн |
192+ | 12.16 грн |
STY60NK30Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 37.5A; 450W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 37.5A
Power dissipation: 450W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 45mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 554.90 грн |
3+ | 320.32 грн |
8+ | 303.50 грн |
STY60NM50 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37.8A
Power dissipation: 560W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 37.8A; 560W; MAX247; ESD
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 37.8A
Power dissipation: 560W
Case: MAX247
Gate-source voltage: ±30V
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1251.41 грн |
2+ | 801.18 грн |
4+ | 757.61 грн |
STW13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 190W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
на замовлення 7 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 315.32 грн |
4+ | 222.47 грн |
STF13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: SuperMESH5™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 241.23 грн |
6+ | 173.54 грн |
15+ | 164.37 грн |
STF23N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 64A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; Idm: 64A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Pulsed drain current: 64A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 50 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 375.42 грн |
4+ | 227.05 грн |
11+ | 214.82 грн |
STL3N80K5 |
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2A; Idm: 8A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 38W
Case: PowerFLAT 5x6
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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STF3N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.5A; Idm: 10A; 20W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 10A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhancement
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STP3N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 10A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 1.6A; Idm: 10A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.6A
Pulsed drain current: 10A
Power dissipation: 60W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: THT
Gate charge: 9.5nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
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STP23N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 10A; Idm: 64A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Technology: MDmesh™ K5
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STB13N80K5 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 7.6A; 190W; D2PAK; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 190W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Technology: SuperMesh™
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STW23N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 64A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 64A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 64A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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STFU13N80K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ K5
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 7.6A; 35W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7.6A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Technology: MDmesh™ K5
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STP3NK50Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 9.2A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9.2A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.3A; Idm: 9.2A; 45W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.3A
Power dissipation: 45W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: 9.2A
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STM32F334R8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; SPI; USART
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 51
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 3
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP64
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; SPI; USART
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 51
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 3
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP64
Supply voltage: 2...3.6V DC
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STEVAL-ILL056V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: LED5000; 850kHz; 3A
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: LED5000
Frequency: 850kHz
Kit contents: base board
Operating current: 3A
Interface: PWM
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: LED5000; 850kHz; 3A
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: LED5000
Frequency: 850kHz
Kit contents: base board
Operating current: 3A
Interface: PWM
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STEVAL-ILL046V2 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: demonstration; base board; 850kHz; 3÷18VDC
Additional functions: DC/DC converter
Type of development kit: demonstration
Kind of integrated circuit: LED driver
Operating voltage: 3...18V DC
Frequency: 850kHz
Kit contents: base board
Category: STM development kits
Description: Dev.kit: demonstration; base board; 850kHz; 3÷18VDC
Additional functions: DC/DC converter
Type of development kit: demonstration
Kind of integrated circuit: LED driver
Operating voltage: 3...18V DC
Frequency: 850kHz
Kit contents: base board
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STEVAL-ISA156V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: L6986; 0.25÷2MHz
Additional functions: DC/DC converter
Type of development kit: evaluation
Components: L6986
Kind of connector: measuring terminal
Operating voltage: 4...38V DC
Frequency: 0.25...2MHz
Kit contents: prototype board
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: L6986; 0.25÷2MHz
Additional functions: DC/DC converter
Type of development kit: evaluation
Components: L6986
Kind of connector: measuring terminal
Operating voltage: 4...38V DC
Frequency: 0.25...2MHz
Kit contents: prototype board
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STEVAL-ISA206V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: L6986H; 0.25÷2MHz
Output voltage: 38V
Output current: 2A
Additional functions: DC/DC converter
Type of development kit: evaluation
Topology: buck
Components: L6986H
Kind of connector: measuring terminal
Operating voltage: 4...38V DC
Frequency: 0.25...2MHz
Kit contents: prototype board
Category: STM development kits
Description: Dev.kit: evaluation; prototype board; Comp: L6986H; 0.25÷2MHz
Output voltage: 38V
Output current: 2A
Additional functions: DC/DC converter
Type of development kit: evaluation
Topology: buck
Components: L6986H
Kind of connector: measuring terminal
Operating voltage: 4...38V DC
Frequency: 0.25...2MHz
Kit contents: prototype board
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STW65N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Case: TO247
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 368W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 29A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 29A
Pulsed drain current: 140A
Case: TO247
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 65.2nC
Kind of package: tube
Kind of channel: enhancement
Gate-source voltage: ±25V
Power dissipation: 368W
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STWA65N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 140A
Case: TO247
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 24A; Idm: 140A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Pulsed drain current: 140A
Case: TO247
On-state resistance: 71mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
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NUCLEO-U031R8 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32U031R8T6
Type of development kit: STM32
Kit contents: base board
Components: STM32U031R8T6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kind of connector: pin header; pin strips; USB C socket
Category: STM development kits
Description: Dev.kit: STM32; base board; Comp: STM32U031R8T6
Type of development kit: STM32
Kit contents: base board
Components: STM32U031R8T6
Programmers and development kits features: integrated programmer/debugger; microcontroller I/O lines lead to goldpin connectors
Kind of connector: pin header; pin strips; USB C socket
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 875.99 грн |
3+ | 812.88 грн |
TSV630IQ1T |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 880kHz; Ch: 1; DFN6; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: DFN6
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Kind of package: reel; tape
Input offset current: 0.1nA
Voltage supply range: 1.5...5.5V DC
Input bias current: 0.1nA
Quiescent current: 72µA
Slew rate: 0.34V/μs
Number of channels: 1
Bandwidth: 880kHz
Integrated circuit features: low voltage; rail-to-rail
Category: SMD operational amplifiers
Description: IC: operational amplifier; 880kHz; Ch: 1; DFN6; 1.5÷5.5VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Case: DFN6
Operating temperature: -40...125°C
Input offset voltage: 4.5mV
Kind of package: reel; tape
Input offset current: 0.1nA
Voltage supply range: 1.5...5.5V DC
Input bias current: 0.1nA
Quiescent current: 72µA
Slew rate: 0.34V/μs
Number of channels: 1
Bandwidth: 880kHz
Integrated circuit features: low voltage; rail-to-rail
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L7987LTR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 2A; SMD
Frequency: 250...1500kHz
Input voltage: 4.5...61V DC
Kind of package: reel; tape
Output voltage: 0.8...61V DC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Topology: buck
Number of channels: 1
Type of integrated circuit: driver
Case: HTSSOP16
Output current: 2A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 2A; SMD
Frequency: 250...1500kHz
Input voltage: 4.5...61V DC
Kind of package: reel; tape
Output voltage: 0.8...61V DC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Topology: buck
Number of channels: 1
Type of integrated circuit: driver
Case: HTSSOP16
Output current: 2A
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L7987TR |
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Виробник: STMicroelectronics
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 3A; SMD
Frequency: 250...1500kHz
Input voltage: 4.5...61V DC
Kind of package: reel; tape
Output voltage: 0.8...61V DC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Topology: buck
Number of channels: 1
Type of integrated circuit: driver
Case: HTSSOP16
Output current: 3A
Category: Voltage regulators - DC/DC circuits
Description: Driver; DC/DC converter; Uin: 4.5÷61VDC; Uout: 0.8÷61VDC; 3A; SMD
Frequency: 250...1500kHz
Input voltage: 4.5...61V DC
Kind of package: reel; tape
Output voltage: 0.8...61V DC
Mounting: SMD
Kind of integrated circuit: DC/DC converter
Topology: buck
Number of channels: 1
Type of integrated circuit: driver
Case: HTSSOP16
Output current: 3A
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STF14NM50N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 500V; 8A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 96 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 119.38 грн |
12+ | 80.27 грн |
32+ | 75.68 грн |
L7818CV |
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Виробник: STMicroelectronics
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1.5A; TO220AB; THT; L78
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 18V
Output current: 1.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±5%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 21...31V
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 1.5A; TO220AB; THT; L78
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 2V
Output voltage: 18V
Output current: 1.5A
Case: TO220AB
Mounting: THT
Manufacturer series: L78
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±5%
Number of channels: 1
Heatsink thickness: 0.51...0.6mm
Input voltage: 21...31V
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L4931CD50-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
на замовлення 956 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.75 грн |
10+ | 41.74 грн |
25+ | 39.68 грн |
32+ | 28.67 грн |
86+ | 27.14 грн |
L4931ABD50-TR |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
на замовлення 4262 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.92 грн |
10+ | 59.40 грн |
24+ | 38.22 грн |
65+ | 36.08 грн |
2500+ | 35.93 грн |
STP42N60M2-EP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Gate charge: 55nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ M2; unipolar; 600V; 22A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ M2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 87mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 136A
Gate charge: 55nC
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STP43N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
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LDK320AU50R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Manufacturer series: LDK320
Voltage drop: 0.35V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.2A; SOT89; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.2A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Manufacturer series: LDK320
Voltage drop: 0.35V
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LDK320M30R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; SOT23-5; SMD
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Kind of package: reel; tape
Manufacturer series: LDK320
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Tolerance: ±2%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 0.2A; SOT23-5; SMD
Output voltage: 3V
Output current: 0.2A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Kind of package: reel; tape
Manufacturer series: LDK320
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Tolerance: ±2%
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LDK320AM25R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Kind of package: reel; tape
Manufacturer series: LDK320
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Tolerance: ±0.5%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.2A; SOT23-5; SMD
Output voltage: 2.5V
Output current: 0.2A
Voltage drop: 0.35V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 2.5...18V
Kind of package: reel; tape
Manufacturer series: LDK320
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: SOT23-5
Tolerance: ±0.5%
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LDK320AM36R |
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Виробник: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.6V; 0.2A; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 3.6V
Output current: 0.2A
Case: SOT23-5
Mounting: SMD
Manufacturer series: LDK320
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±0.5%
Number of channels: 1
Input voltage: 2.5...18V
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B-LCDAD-HDMI1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: adapter; expansion board; Comp: ADV7533
Interface: DSI; HDMI; MIPI
Application: for devices with displays
Kit contents: expansion board
Kind of connector: HDMI socket; MIPI DSI
Type of development kit: adapter
Components: ADV7533
Number of add-on connectors: 2
Category: STM development kits
Description: Dev.kit: adapter; expansion board; Comp: ADV7533
Interface: DSI; HDMI; MIPI
Application: for devices with displays
Kit contents: expansion board
Kind of connector: HDMI socket; MIPI DSI
Type of development kit: adapter
Components: ADV7533
Number of add-on connectors: 2
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STW32NM50N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
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BAT30CWFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 2879 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.05 грн |
22+ | 18.10 грн |
26+ | 15.14 грн |
31+ | 12.57 грн |
100+ | 6.61 грн |
250+ | 6.04 грн |
335+ | 2.73 грн |
920+ | 2.58 грн |
BAT30SWFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: double series
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
на замовлення 3950 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.64 грн |
43+ | 8.94 грн |
59+ | 6.59 грн |
100+ | 5.79 грн |
274+ | 3.33 грн |
753+ | 3.16 грн |
3000+ | 3.04 грн |
STGAP2SICSACTR |
Виробник: STMicroelectronics
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Supply voltage: 3.1...5.25V
Output voltage: 1.2kV
Output current: -4...4A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: SiC MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8-W
Category: MOSFET/IGBT drivers
Description: IC: driver; SiC MOSFET gate driver; SO8-W; -4÷4A; 1.2kV; Ch: 1
Supply voltage: 3.1...5.25V
Output voltage: 1.2kV
Output current: -4...4A
Type of integrated circuit: driver
Impulse rise time: 30ns
Pulse fall time: 30ns
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of package: reel; tape
Kind of integrated circuit: SiC MOSFET gate driver
Mounting: SMD
Operating temperature: -40...125°C
Case: SO8-W
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STM32F303VCT6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
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STM32F303VCT7TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
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STM32F303VCY6TR |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; WLCSP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 78
Case: WLCSP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; WLCSP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 78
Case: WLCSP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
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TS3022IDT |
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Виробник: STMicroelectronics
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA
Type of integrated circuit: comparator
Kind of comparator: fast
Number of comparators: 2
Operating voltage: 1.8...5V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: push-pull
Input offset current: 100nA
Category: SMD comparators
Description: IC: comparator; fast; Cmp: 2; 1.8÷5V; SMT; SO8; reel,tape; 100nA
Type of integrated circuit: comparator
Kind of comparator: fast
Number of comparators: 2
Operating voltage: 1.8...5V
Mounting: SMT
Case: SO8
Operating temperature: -40...125°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: push-pull
Input offset current: 100nA
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STP10N95K5 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
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STGP10NB60S |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
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STGP10NB60SD |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
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SMAJ48CA-TR |
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Виробник: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1332 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.46 грн |
21+ | 18.81 грн |
75+ | 13.46 грн |
100+ | 12.84 грн |
152+ | 6.04 грн |
419+ | 5.73 грн |
TS922AIDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
на замовлення 2325 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 102.09 грн |
10+ | 63.45 грн |
28+ | 32.87 грн |
76+ | 30.58 грн |
TS9224IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
товару немає в наявності
В кошику
од. на суму грн.
TS9224IYDT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Quiescent current: 1.3mA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Quiescent current: 1.3mA
товару немає в наявності
В кошику
од. на суму грн.
TS9222IPT |
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Виробник: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
товару немає в наявності
В кошику
од. на суму грн.