Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170090) > Сторінка 2806 з 2835
Фото | Назва | Виробник | Інформація |
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STPSC10065DLF | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; PowerFLAT; SMD; 650V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerFLAT Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 1.65V Max. load current: 18A Max. forward impulse current: 210A Kind of package: reel; tape Leakage current: 0.9mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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L6376D | STMicroelectronics |
![]() Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; -25÷85°C Type of integrated circuit: power switch Number of channels: 4 Mounting: SMD Case: PowerSO20 Operating temperature: -25...85°C Kind of integrated circuit: high-side Supply voltage: 9.5...35V Frequency: 25kHz Output current: 0.5A |
на замовлення 225 шт: термін постачання 21-30 дні (днів) |
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L6376D013TR | STMicroelectronics |
![]() Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; reel,tape Type of integrated circuit: power switch Number of channels: 4 Mounting: SMD Case: PowerSO20 Operating temperature: -25...85°C Kind of integrated circuit: high-side Kind of package: reel; tape Supply voltage: 9.5...35V Frequency: 25kHz Output current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BAS70KFILM | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SOD523; SMD; 70V; 70mA; reel,tape Type of diode: Schottky rectifying Case: SOD523 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 1A |
на замовлення 12513 шт: термін постачання 21-30 дні (днів) |
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STGW60H65FB | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 375W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 306nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STGW60H65DRF | STMicroelectronics |
![]() Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 60A Power dissipation: 420W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 240A Mounting: THT Gate charge: 217nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TN5015H-6I | STMicroelectronics |
![]() Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube Max. off-state voltage: 0.6kV Max. load current: 50A Load current: 30A Gate current: 15mA Max. forward impulse current: 0.45kA Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: thyristor Mounting: THT Case: TO220ABIns |
на замовлення 64 шт: термін постачання 21-30 дні (днів) |
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STGFW40V60DF | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 40A Power dissipation: 98.5W Case: TO3PF Gate-emitter voltage: ±20V Pulsed collector current: 160A Mounting: THT Gate charge: 226nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
PD57018-E | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF Drain-source voltage: 65V Drain current: 2.5A Type of transistor: N-MOSFET Open-loop gain: 16.5dB Output power: 18W Power dissipation: 31.7W Polarisation: unipolar Kind of package: tube Electrical mounting: SMT Kind of transistor: RF Kind of channel: enhancement Gate-source voltage: ±20V Case: PowerSO10RF Frequency: 945MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ22A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 25.7V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
на замовлення 1908 шт: термін постачання 21-30 дні (днів) |
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STPS61H100CW | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.63V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.63V Max. forward impulse current: 0.45kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STPS61H100CWY | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.93V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247 Max. forward voltage: 0.93V Max. load current: 80A Max. forward impulse current: 0.45kA Leakage current: 16mA Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STWA70N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 264A Technology: MDmesh™ DM2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STWA70N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 390W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 220A Technology: MDmesh™ DM6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STP8NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 171 шт: термін постачання 21-30 дні (днів) |
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STP8NK80ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 205 шт: термін постачання 21-30 дні (днів) |
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STPS1045D | STMicroelectronics |
![]() ![]() Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Heatsink thickness: 1.23...1.32mm Max. load current: 30A Max. forward voltage: 0.72V Max. forward impulse current: 180A |
на замовлення 284 шт: термін постачання 21-30 дні (днів) |
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STPS1045DEE-TR | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: PowerFLAT Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.72V Max. forward impulse current: 100A Kind of package: reel; tape Max. load current: 15A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STPS1045SF | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 210A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STPS1045SFY | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape Type of diode: Schottky rectifying Case: TO277A Mounting: SMD Max. off-state voltage: 45V Load current: 10A Semiconductor structure: single diode Max. forward voltage: 0.62V Max. forward impulse current: 210A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VNI4140K-32 | STMicroelectronics |
![]() Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSSO24; tube Operating temperature: -40...125°C Supply voltage: 10.5...36V On-state resistance: 80mΩ Output current: 1A Type of integrated circuit: power switch Number of channels: 4 Kind of package: tube Kind of integrated circuit: high-side Mounting: SMD Case: PowerSSO24 |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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STPS30SM120SFP | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Case: TO220FP Max. forward voltage: 0.95V Max. load current: 50A Max. forward impulse current: 0.24kA Leakage current: 50mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STM32F302VCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Number of comparators: 4 Clock frequency: 72MHz Number of inputs/outputs: 87 Number of 12bit A/D converters: 2 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Kind of architecture: Cortex M4 Family: STM32F3 Number of 12bit D/A converters: 1 Memory: 40kB SRAM; 256kB FLASH Mounting: SMD Operating temperature: -40...85°C Case: LQFP100 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STM32F302VET6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Number of comparators: 4 Clock frequency: 72MHz Number of inputs/outputs: 86 Number of 12bit A/D converters: 2 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Kind of architecture: Cortex M4 Family: STM32F3 Number of 12bit D/A converters: 1 Memory: 64kB SRAM; 512kB FLASH Mounting: SMD Operating temperature: -40...85°C Case: LQFP100 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STM32F302VCT7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 4 Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Number of comparators: 4 Clock frequency: 72MHz Number of inputs/outputs: 87 Number of 12bit A/D converters: 2 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Kind of architecture: Cortex M4 Family: STM32F3 Number of 12bit D/A converters: 1 Memory: 40kB SRAM; 256kB FLASH Mounting: SMD Operating temperature: -40...105°C Case: LQFP100 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STM32F302VBT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 32kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 4 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
STM32F302C8T7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB Number of comparators: 3 Clock frequency: 72MHz Number of inputs/outputs: 37 Number of 12bit A/D converters: 1 Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog Kind of architecture: Cortex M4 Family: STM32F3 Number of 12bit D/A converters: 1 Memory: 16kB SRAM; 64kB FLASH Mounting: SMD Operating temperature: -40...105°C Case: LQFP48 Supply voltage: 2...3.6V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302C6T6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 37 Case: LQFP48 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 16kB SRAM; 32kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 3 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302RBT7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 32kB SRAM; 128kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 2 Number of comparators: 4 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302RCT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 2 Number of comparators: 4 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302R8T6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 1 Number of comparators: 3 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302R8T7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 1 Number of comparators: 3 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32F302RCT7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 52 Case: LQFP64 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 2 Number of comparators: 4 Number of 12bit D/A converters: 1 Family: STM32F3 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32L062K8T6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0 Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Case: LQFP32 Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x4; USART x2; USB Clock frequency: 32MHz Number of inputs/outputs: 25 Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of architecture: Cortex M0+ Family: STM32L0 Number of 12bit D/A converters: 1 Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STM32L062K8U6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Mounting: SMD Case: UFQFPN32 Operating temperature: -40...85°C Kind of package: in-tray Supply voltage: 1.8...3.6V DC Interface: I2C; SPI x4; USART x2; USB Clock frequency: 32MHz Number of inputs/outputs: 27 Number of 16bit timers: 5 Number of 12bit A/D converters: 10 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog Kind of architecture: Cortex M0+ Family: STM32L0 Number of 12bit D/A converters: 1 Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STEVAL-ILL062V1 | STMicroelectronics |
![]() Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC Number of channels: 16 Operating voltage: 6...24V DC Kit contents: base board Interface: SPI Number of diodes: 32 Additional functions: DC/DC converter Type of development kit: evaluation Kind of integrated circuit: LED driver Components: L7981D; STP16CPC26 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STP105N3LL | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A Type of transistor: N-MOSFET Technology: STripFET™ H6 Polarisation: unipolar Drain-source voltage: 30V Drain current: 105A Pulsed drain current: 320A Power dissipation: 140W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STM8S105K4B6 | STMicroelectronics |
![]() Description: IC: STM8 microcontroller; 16MHz; DIP32; 3÷5.5VDC; 16bit timers: 3 Type of integrated circuit: STM8 microcontroller Clock frequency: 16MHz Mounting: THT Case: DIP32 Supply voltage: 3...5.5V DC Interface: I2C; IrDA; ISO7846; SPI; UART Integrated circuit features: Beeper; IWDG; WWDG Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH Number of 16bit timers: 3 Number of 8bit timers: 1 Number of PWM channels: 4 Number of 10bit A/D converters: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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T2035H-6I | STMicroelectronics |
![]() Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™ Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Kind of package: tube Features of semiconductor devices: high temperature Technology: Snubberless™ Type of thyristor: triac Mounting: THT Case: TO220ABIns |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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T2035H-6T | STMicroelectronics |
![]() Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™ Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Kind of package: tube Features of semiconductor devices: high temperature Technology: Snubberless™ Type of thyristor: triac Mounting: THT Case: TO220AB |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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T2035H-6G-TR | STMicroelectronics |
![]() Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035T-8G | STMicroelectronics |
![]() Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A Mounting: SMD Kind of package: tube Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 0.168kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035H-6G | STMicroelectronics |
![]() Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Mounting: SMD Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.6kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035H-8G | STMicroelectronics |
![]() Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Mounting: SMD Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035H-8G-TR | STMicroelectronics |
![]() Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: high temperature Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035H-8I | STMicroelectronics |
![]() Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: triac Case: TO220ABIns Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035H-8T | STMicroelectronics |
![]() Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 210A; high temperature Mounting: THT Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: triac Case: TO220AB Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 210A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
T2035T-8G-TR | STMicroelectronics |
![]() Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A Mounting: SMD Kind of package: reel; tape Type of thyristor: triac Case: D2PAK Max. off-state voltage: 0.8kV Max. load current: 20A Gate current: 35mA Max. forward impulse current: 0.168kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STD5NM60-1 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.1A Power dissipation: 96W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 18nC Pulsed drain current: 20A |
на замовлення 140 шт: термін постачання 21-30 дні (днів) |
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STW34NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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STF24NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 316 шт: термін постачання 21-30 дні (днів) |
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STP24NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 44nC Pulsed drain current: 68A |
на замовлення 185 шт: термін постачання 21-30 дні (днів) |
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STF34NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 116A |
на замовлення 26 шт: термін постачання 21-30 дні (днів) |
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STP34NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 73 шт: термін постачання 21-30 дні (днів) |
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STW34NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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STL3NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 22W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±25V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 9.5nC Pulsed drain current: 2.6A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
STD9NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 745mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17.4nC Pulsed drain current: 26A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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STD5NM60T4 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.1A Power dissipation: 96W Case: DPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW24NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 125W Case: TO247 Gate-source voltage: ±30V On-state resistance: 168mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STW21NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 140W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.17Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
STPSC10065DLF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. load current: 18A
Max. forward impulse current: 210A
Kind of package: reel; tape
Leakage current: 0.9mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. load current: 18A
Max. forward impulse current: 210A
Kind of package: reel; tape
Leakage current: 0.9mA
товару немає в наявності
В кошику
од. на суму грн.
L6376D |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; -25÷85°C
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; -25÷85°C
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
на замовлення 225 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 985.48 грн |
2+ | 723.97 грн |
4+ | 684.22 грн |
31+ | 657.46 грн |
L6376D013TR |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Kind of package: reel; tape
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Kind of package: reel; tape
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
товару немає в наявності
В кошику
од. на суму грн.
BAS70KFILM |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
на замовлення 12513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 14.00 грн |
50+ | 7.72 грн |
100+ | 4.96 грн |
250+ | 4.11 грн |
311+ | 2.87 грн |
855+ | 2.71 грн |
STGW60H65FB |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
STGW60H65DRF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
TN5015H-6I |
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Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
на замовлення 64 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 186.06 грн |
10+ | 94.80 грн |
12+ | 78.74 грн |
32+ | 74.16 грн |
STGFW40V60DF |
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Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 98.5W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 98.5W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
товару немає в наявності
В кошику
од. на суму грн.
PD57018-E |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
товару немає в наявності
В кошику
од. на суму грн.
SMBJ22A-TR |
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Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1908 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.99 грн |
18+ | 21.56 грн |
25+ | 19.11 грн |
100+ | 14.83 грн |
139+ | 6.57 грн |
382+ | 6.27 грн |
STPS61H100CW |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.63V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.63V
Max. forward impulse current: 0.45kA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.63V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.63V
Max. forward impulse current: 0.45kA
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
STPS61H100CWY |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.93V
Max. load current: 80A
Max. forward impulse current: 0.45kA
Leakage current: 16mA
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.93V
Max. load current: 80A
Max. forward impulse current: 0.45kA
Leakage current: 16mA
Kind of package: tube
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
STWA70N60DM2 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
товару немає в наявності
В кошику
од. на суму грн.
STWA70N60DM6 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
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STP8NK80Z |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 171 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 105.38 грн |
5+ | 87.92 грн |
10+ | 78.74 грн |
14+ | 67.28 грн |
37+ | 64.22 грн |
STP8NK80ZFP |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 277.45 грн |
5+ | 191.89 грн |
13+ | 71.86 грн |
35+ | 68.04 грн |
STPS1045D | ![]() |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
на замовлення 284 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 60.92 грн |
10+ | 47.25 грн |
37+ | 25.30 грн |
100+ | 23.92 грн |
STPS1045DEE-TR |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
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STPS1045SF |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
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STPS1045SFY |
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Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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VNI4140K-32 |
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Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSSO24; tube
Operating temperature: -40...125°C
Supply voltage: 10.5...36V
On-state resistance: 80mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: tube
Kind of integrated circuit: high-side
Mounting: SMD
Case: PowerSSO24
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSSO24; tube
Operating temperature: -40...125°C
Supply voltage: 10.5...36V
On-state resistance: 80mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: tube
Kind of integrated circuit: high-side
Mounting: SMD
Case: PowerSSO24
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 361.43 грн |
3+ | 311.15 грн |
8+ | 294.33 грн |
STPS30SM120SFP |
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Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
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STM32F302VCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VET6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 86
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 64kB SRAM; 512kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 86
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 64kB SRAM; 512kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VCT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 4
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP100
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 4
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VBT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302C8T7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 37
Number of 12bit A/D converters: 1
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP48
Supply voltage: 2...3.6V DC
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 37
Number of 12bit A/D converters: 1
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP48
Supply voltage: 2...3.6V DC
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STM32F302C6T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RBT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT7 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32L062K8T6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STM32L062K8U6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: UFQFPN32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: UFQFPN32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STEVAL-ILL062V1 |
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Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Number of channels: 16
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Number of channels: 16
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
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STP105N3LL |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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STM8S105K4B6 |
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Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; DIP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: THT
Case: DIP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; DIP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: THT
Case: DIP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
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T2035H-6I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220ABIns
Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220ABIns
на замовлення 105 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 114.44 грн |
10+ | 88.68 грн |
12+ | 77.98 грн |
33+ | 73.39 грн |
100+ | 71.86 грн |
T2035H-6T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220AB
Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220AB
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 158.07 грн |
T2035H-6G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
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T2035H-6G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8I |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220ABIns
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220ABIns
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8T |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G-TR |
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Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
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STD5NM60-1 |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
на замовлення 140 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 119.38 грн |
10+ | 67.28 грн |
18+ | 52.75 грн |
47+ | 49.69 грн |
STW34NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 712.15 грн |
4+ | 245.40 грн |
11+ | 231.64 грн |
STF24NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 232.99 грн |
8+ | 114.67 грн |
22+ | 108.56 грн |
STP24NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
на замовлення 185 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 219.00 грн |
9+ | 103.21 грн |
24+ | 97.09 грн |
STF34NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 400.12 грн |
3+ | 334.85 грн |
4+ | 269.86 грн |
10+ | 255.34 грн |
STP34NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 659.46 грн |
4+ | 231.64 грн |
10+ | 230.88 грн |
11+ | 218.64 грн |
STW34NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 366.37 грн |
4+ | 257.63 грн |
10+ | 243.87 грн |
STL3NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
товару немає в наявності
В кошику
од. на суму грн.
STD9NM60N |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
товару немає в наявності
В кошику
од. на суму грн.
STD5NM60T4 |
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Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
товару немає в наявності
В кошику
од. на суму грн.
STW24NM60N |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
STW21NM60ND |
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Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.