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STPSC10065DLF STMicroelectronics stpsc10065dlf.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. load current: 18A
Max. forward impulse current: 210A
Kind of package: reel; tape
Leakage current: 0.9mA
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L6376D L6376D STMicroelectronics L6376D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; -25÷85°C
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
1+985.48 грн
2+723.97 грн
4+684.22 грн
31+657.46 грн
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L6376D013TR STMicroelectronics L6376.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Kind of package: reel; tape
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
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BAS70KFILM BAS70KFILM STMicroelectronics BAS70.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
на замовлення 12513 шт:
термін постачання 21-30 дні (днів)
30+14.00 грн
50+7.72 грн
100+4.96 грн
250+4.11 грн
311+2.87 грн
855+2.71 грн
Мінімальне замовлення: 30
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STGW60H65FB STMicroelectronics en.DM00094070.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
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STGW60H65DRF STMicroelectronics en.DM00039960.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
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TN5015H-6I STMicroelectronics tn5015h-6i.pdf Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
3+186.06 грн
10+94.80 грн
12+78.74 грн
32+74.16 грн
Мінімальне замовлення: 3
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STGFW40V60DF STMicroelectronics en.DM00080360.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 98.5W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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PD57018-E STMicroelectronics pd57018-e.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
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SMBJ22A-TR SMBJ22A-TR STMicroelectronics SMBJ-st.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1908 шт:
термін постачання 21-30 дні (днів)
15+27.99 грн
18+21.56 грн
25+19.11 грн
100+14.83 грн
139+6.57 грн
382+6.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
STPS61H100CW STPS61H100CW STMicroelectronics stps61h100c.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.63V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.63V
Max. forward impulse current: 0.45kA
Kind of package: tube
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STPS61H100CWY STMicroelectronics stps61h100c.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.93V
Max. load current: 80A
Max. forward impulse current: 0.45kA
Leakage current: 16mA
Kind of package: tube
Application: automotive industry
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STWA70N60DM2 STMicroelectronics stwa70n60dm2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
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STWA70N60DM6 STMicroelectronics stwa70n60dm6.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
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STP8NK80Z STP8NK80Z STMicroelectronics STP8NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
4+105.38 грн
5+87.92 грн
10+78.74 грн
14+67.28 грн
37+64.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STP8NK80ZFP STP8NK80ZFP STMicroelectronics STP8NK80Z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
2+277.45 грн
5+191.89 грн
13+71.86 грн
35+68.04 грн
Мінімальне замовлення: 2
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STPS1045D STPS1045D STMicroelectronics STPS1045D.pdf description Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
7+60.92 грн
10+47.25 грн
37+25.30 грн
100+23.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STPS1045DEE-TR STMicroelectronics en.DM00056399.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
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STPS1045SF STMicroelectronics stps1045sf.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
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STPS1045SFY STMicroelectronics stps1045sfy.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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VNI4140K-32 VNI4140K-32 STMicroelectronics VNI4140K-32.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSSO24; tube
Operating temperature: -40...125°C
Supply voltage: 10.5...36V
On-state resistance: 80mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: tube
Kind of integrated circuit: high-side
Mounting: SMD
Case: PowerSSO24
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
2+361.43 грн
3+311.15 грн
8+294.33 грн
Мінімальне замовлення: 2
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STPS30SM120SFP STPS30SM120SFP STMicroelectronics en.DM00050160.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
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STM32F302VCT6 STM32F302VCT6 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VET6 STM32F302VET6 STMicroelectronics stm32f302re.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 86
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 64kB SRAM; 512kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VCT7 STM32F302VCT7 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 4
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VBT6 STM32F302VBT6 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302C8T7 STMicroelectronics stm32f302c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 37
Number of 12bit A/D converters: 1
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP48
Supply voltage: 2...3.6V DC
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STM32F302C6T6 STMicroelectronics stm32f302c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RBT7 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT6 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T6 STMicroelectronics stm32f302c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T7 STMicroelectronics stm32f302c6.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT7 STMicroelectronics stm32f302cb.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32L062K8T6 STMicroelectronics en.DM00108218.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STM32L062K8U6 STMicroelectronics en.DM00108218.pdf Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: UFQFPN32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STEVAL-ILL062V1 STMicroelectronics STEVAL-ILL062V1.pdf Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Number of channels: 16
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
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STP105N3LL STMicroelectronics en.DM00071078.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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STM8S105K4B6 STM8S105K4B6 STMicroelectronics STM8S105C4-DTE.pdf Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; DIP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: THT
Case: DIP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
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T2035H-6I T2035H-6I STMicroelectronics T2035H,T2050H.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220ABIns
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
4+114.44 грн
10+88.68 грн
12+77.98 грн
33+73.39 грн
100+71.86 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
T2035H-6T T2035H-6T STMicroelectronics T2035H,T2050H.pdf Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220AB
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
3+158.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T2035H-6G-TR STMicroelectronics en.CD00161297.pdf Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G STMicroelectronics t2035t-8g.pdf Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
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T2035H-6G STMicroelectronics en.CD00161297.pdf Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G STMicroelectronics t2035h-8g.pdf Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G-TR STMicroelectronics t2035h-8g.pdf Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8I STMicroelectronics t2035h-8i.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220ABIns
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8T STMicroelectronics t2035h-8t.pdf Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G-TR STMicroelectronics t2035t-8g.pdf Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
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STD5NM60-1 STD5NM60-1 STMicroelectronics std5nm60.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
4+119.38 грн
10+67.28 грн
18+52.75 грн
47+49.69 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STW34NM60N STW34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
1+712.15 грн
4+245.40 грн
11+231.64 грн
В кошику  од. на суму  грн.
STF24NM60N STF24NM60N STMicroelectronics STF24NM60N.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 21-30 дні (днів)
2+232.99 грн
8+114.67 грн
22+108.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP24NM60N STP24NM60N STMicroelectronics stp24nm60n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
2+219.00 грн
9+103.21 грн
24+97.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF34NM60ND STF34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
2+400.12 грн
3+334.85 грн
4+269.86 грн
10+255.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP34NM60N STP34NM60N STMicroelectronics STW34NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
1+659.46 грн
4+231.64 грн
10+230.88 грн
11+218.64 грн
В кошику  од. на суму  грн.
STW34NM60ND STW34NM60ND STMicroelectronics STx34NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
2+366.37 грн
4+257.63 грн
10+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL3NM60N STMicroelectronics en.DM00048286.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
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STD9NM60N STMicroelectronics en.CD00286931.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
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STD5NM60T4 STD5NM60T4 STMicroelectronics std5nm60.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STW24NM60N STW24NM60N STMicroelectronics STx24NM60N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW21NM60ND STW21NM60ND STMicroelectronics STx21NM60ND-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STPSC10065DLF stpsc10065dlf.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 650V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 1.65V
Max. load current: 18A
Max. forward impulse current: 210A
Kind of package: reel; tape
Leakage current: 0.9mA
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L6376D L6376D.pdf
L6376D
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; -25÷85°C
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+985.48 грн
2+723.97 грн
4+684.22 грн
31+657.46 грн
В кошику  од. на суму  грн.
L6376D013TR L6376.pdf
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 500mA; Ch: 4; SMD; PowerSO20; reel,tape
Type of integrated circuit: power switch
Number of channels: 4
Mounting: SMD
Case: PowerSO20
Operating temperature: -25...85°C
Kind of integrated circuit: high-side
Kind of package: reel; tape
Supply voltage: 9.5...35V
Frequency: 25kHz
Output current: 0.5A
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BAS70KFILM BAS70.pdf
BAS70KFILM
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky rectifying
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
на замовлення 12513 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.00 грн
50+7.72 грн
100+4.96 грн
250+4.11 грн
311+2.87 грн
855+2.71 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
STGW60H65FB en.DM00094070.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 375W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 375W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 306nC
Kind of package: tube
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STGW60H65DRF en.DM00039960.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 420W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 60A
Power dissipation: 420W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 240A
Mounting: THT
Gate charge: 217nC
Kind of package: tube
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TN5015H-6I tn5015h-6i.pdf
Виробник: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+186.06 грн
10+94.80 грн
12+78.74 грн
32+74.16 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGFW40V60DF en.DM00080360.pdf
Виробник: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 40A; 98.5W; TO3PF
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 40A
Power dissipation: 98.5W
Case: TO3PF
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 226nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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PD57018-E pd57018-e.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; RF; 65V; 2.5A; 31.7W; PowerSO10RF
Drain-source voltage: 65V
Drain current: 2.5A
Type of transistor: N-MOSFET
Open-loop gain: 16.5dB
Output power: 18W
Power dissipation: 31.7W
Polarisation: unipolar
Kind of package: tube
Electrical mounting: SMT
Kind of transistor: RF
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PowerSO10RF
Frequency: 945MHz
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SMBJ22A-TR SMBJ-st.pdf
SMBJ22A-TR
Виробник: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
на замовлення 1908 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+27.99 грн
18+21.56 грн
25+19.11 грн
100+14.83 грн
139+6.57 грн
382+6.27 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
STPS61H100CW stps61h100c.pdf
STPS61H100CW
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.63V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.63V
Max. forward impulse current: 0.45kA
Kind of package: tube
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STPS61H100CWY stps61h100c.pdf
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO247; Ufmax: 0.93V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247
Max. forward voltage: 0.93V
Max. load current: 80A
Max. forward impulse current: 0.45kA
Leakage current: 16mA
Kind of package: tube
Application: automotive industry
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STWA70N60DM2 stwa70n60dm2.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
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STWA70N60DM6 stwa70n60dm6.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
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STP8NK80Z STP8NK80Z.pdf
STP8NK80Z
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 171 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+105.38 грн
5+87.92 грн
10+78.74 грн
14+67.28 грн
37+64.22 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STP8NK80ZFP STP8NK80Z.pdf
STP8NK80ZFP
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+277.45 грн
5+191.89 грн
13+71.86 грн
35+68.04 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS1045D description STPS1045D.pdf
STPS1045D
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 10A; TO220AC; Ufmax: 0.72V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Heatsink thickness: 1.23...1.32mm
Max. load current: 30A
Max. forward voltage: 0.72V
Max. forward impulse current: 180A
на замовлення 284 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+60.92 грн
10+47.25 грн
37+25.30 грн
100+23.92 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
STPS1045DEE-TR en.DM00056399.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerFLAT; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: PowerFLAT
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.72V
Max. forward impulse current: 100A
Kind of package: reel; tape
Max. load current: 15A
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STPS1045SF stps1045sf.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
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STPS1045SFY stps1045sfy.pdf
Виробник: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277A; SMD; 45V; 10A; reel,tape
Type of diode: Schottky rectifying
Case: TO277A
Mounting: SMD
Max. off-state voltage: 45V
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.62V
Max. forward impulse current: 210A
Kind of package: reel; tape
Application: automotive industry
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VNI4140K-32 VNI4140K-32.pdf
VNI4140K-32
Виробник: STMicroelectronics
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 4; SMD; PowerSSO24; tube
Operating temperature: -40...125°C
Supply voltage: 10.5...36V
On-state resistance: 80mΩ
Output current: 1A
Type of integrated circuit: power switch
Number of channels: 4
Kind of package: tube
Kind of integrated circuit: high-side
Mounting: SMD
Case: PowerSSO24
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+361.43 грн
3+311.15 грн
8+294.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STPS30SM120SFP en.DM00050160.pdf
STPS30SM120SFP
Виробник: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
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STM32F302VCT6 stm32f302cb.pdf
STM32F302VCT6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VET6 stm32f302re.pdf
STM32F302VET6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 86
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 64kB SRAM; 512kB FLASH
Mounting: SMD
Operating temperature: -40...85°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VCT7 stm32f302cb.pdf
STM32F302VCT7
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 4
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Number of comparators: 4
Clock frequency: 72MHz
Number of inputs/outputs: 87
Number of 12bit A/D converters: 2
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 40kB SRAM; 256kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP100
Supply voltage: 2...3.6V DC
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STM32F302VBT6 stm32f302cb.pdf
STM32F302VBT6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302C8T7 stm32f302c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Number of comparators: 3
Clock frequency: 72MHz
Number of inputs/outputs: 37
Number of 12bit A/D converters: 1
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Kind of architecture: Cortex M4
Family: STM32F3
Number of 12bit D/A converters: 1
Memory: 16kB SRAM; 64kB FLASH
Mounting: SMD
Operating temperature: -40...105°C
Case: LQFP48
Supply voltage: 2...3.6V DC
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STM32F302C6T6 stm32f302c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RBT7 stm32f302cb.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT6 stm32f302cb.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T6 stm32f302c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302R8T7 stm32f302c6.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32F302RCT7 stm32f302cb.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP64; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 52
Case: LQFP64
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 2
Number of comparators: 4
Number of 12bit D/A converters: 1
Family: STM32F3
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STM32L062K8T6 en.DM00108218.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; LQFP32; 1.8÷3.6VDC; STM32L0
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: LQFP32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 25
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STM32L062K8U6 en.DM00108218.pdf
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 32MHz; UFQFPN32; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Mounting: SMD
Case: UFQFPN32
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.8...3.6V DC
Interface: I2C; SPI x4; USART x2; USB
Clock frequency: 32MHz
Number of inputs/outputs: 27
Number of 16bit timers: 5
Number of 12bit A/D converters: 10
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; hardware encryption; PdR; PoR; PVD; RTC; TRNG; watchdog
Kind of architecture: Cortex M0+
Family: STM32L0
Number of 12bit D/A converters: 1
Memory: 2kB EEPROM; 8kB SRAM; 64kB FLASH
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STEVAL-ILL062V1 STEVAL-ILL062V1.pdf
Виробник: STMicroelectronics
Category: STM development kits
Description: Dev.kit: evaluation; base board; Comp: L7981D,STP16CPC26; 6÷24VDC
Number of channels: 16
Operating voltage: 6...24V DC
Kit contents: base board
Interface: SPI
Number of diodes: 32
Additional functions: DC/DC converter
Type of development kit: evaluation
Kind of integrated circuit: LED driver
Components: L7981D; STP16CPC26
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STP105N3LL en.DM00071078.pdf
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 105A; Idm: 320A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 320A
Power dissipation: 140W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
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STM8S105K4B6 STM8S105C4-DTE.pdf
STM8S105K4B6
Виробник: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM8 microcontroller; 16MHz; DIP32; 3÷5.5VDC; 16bit timers: 3
Type of integrated circuit: STM8 microcontroller
Clock frequency: 16MHz
Mounting: THT
Case: DIP32
Supply voltage: 3...5.5V DC
Interface: I2C; IrDA; ISO7846; SPI; UART
Integrated circuit features: Beeper; IWDG; WWDG
Memory: 1kB EEPROM; 2kB RAM; 16kB FLASH
Number of 16bit timers: 3
Number of 8bit timers: 1
Number of PWM channels: 4
Number of 10bit A/D converters: 7
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T2035H-6I T2035H,T2050H.pdf
T2035H-6I
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220ABIns; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220ABIns
на замовлення 105 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.44 грн
10+88.68 грн
12+77.98 грн
33+73.39 грн
100+71.86 грн
Мінімальне замовлення: 4
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T2035H-6T T2035H,T2050H.pdf
T2035H-6T
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; TO220AB; Igt: 35mA; Snubberless™
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Kind of package: tube
Features of semiconductor devices: high temperature
Technology: Snubberless™
Type of thyristor: triac
Mounting: THT
Case: TO220AB
на замовлення 4 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+158.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
T2035H-6G-TR en.CD00161297.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G t2035t-8g.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
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T2035H-6G en.CD00161297.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 600V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.6kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G t2035h-8g.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8G-TR t2035h-8g.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
товару немає в наявності
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T2035H-8I t2035h-8i.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220ABIns; Igt: 35mA; Ifsm: 210A
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220ABIns
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035H-8T t2035h-8t.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; TO220AB; Igt: 35mA; Ifsm: 210A; high temperature
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: triac
Case: TO220AB
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 210A
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T2035T-8G-TR t2035t-8g.pdf
Виробник: STMicroelectronics
Category: Triacs
Description: Triac; 800V; 20A; D2PAK; Igt: 35mA; Ifsm: 168A
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: triac
Case: D2PAK
Max. off-state voltage: 0.8kV
Max. load current: 20A
Gate current: 35mA
Max. forward impulse current: 0.168kA
товару немає в наявності
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STD5NM60-1 std5nm60.pdf
STD5NM60-1
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18nC
Pulsed drain current: 20A
на замовлення 140 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+119.38 грн
10+67.28 грн
18+52.75 грн
47+49.69 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STW34NM60N STW34NM60N-DTE.pdf
STW34NM60N
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 330 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+712.15 грн
4+245.40 грн
11+231.64 грн
В кошику  од. на суму  грн.
STF24NM60N STF24NM60N.pdf
STF24NM60N
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 316 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+232.99 грн
8+114.67 грн
22+108.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP24NM60N stp24nm60n.pdf
STP24NM60N
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 44nC
Pulsed drain current: 68A
на замовлення 185 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+219.00 грн
9+103.21 грн
24+97.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF34NM60ND STx34NM60ND_DS.pdf
STF34NM60ND
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+400.12 грн
3+334.85 грн
4+269.86 грн
10+255.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP34NM60N STW34NM60N-DTE.pdf
STP34NM60N
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 73 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+659.46 грн
4+231.64 грн
10+230.88 грн
11+218.64 грн
В кошику  од. на суму  грн.
STW34NM60ND STx34NM60ND-DTE.pdf
STW34NM60ND
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+366.37 грн
4+257.63 грн
10+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STL3NM60N en.DM00048286.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.5nC
Pulsed drain current: 2.6A
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STD9NM60N en.CD00286931.pdf
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17.4nC
Pulsed drain current: 26A
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STD5NM60T4 std5nm60.pdf
STD5NM60T4
Виробник: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.1A; 96W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.1A
Power dissipation: 96W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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STW24NM60N STx24NM60N-DTE.pdf
STW24NM60N
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 125W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 125W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 168mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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STW21NM60ND STx21NM60ND-DTE.pdf
STW21NM60ND
Виробник: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 10A; 140W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 140W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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