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LM4041DICT-1.2 LM4041DICT-1.2 STMicroelectronics en.DM00028684.pdf Description: IC VREF SHUNT 1% SOT323-5
Current - Output: 12 mA
Current - Cathode: 50 µA
Noise - 10Hz to 10kHz: 60µVrms
Voltage - Output (Min/Fixed): 1.225V
Supplier Device Package: SOT-323-5
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 100ppm/°C
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Tolerance: ±1%
Packaging: Cut Tape (CT)
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M41T62LC6F M41T62LC6F STMicroelectronics en.CD00019860.pdf Description: IC RTC CLK/CALENDAR I2C 8LCC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Timekeeping (Max): 0.7µA ~ 0.95µA @ 1.3V ~ 4.4V
Supplier Device Package: 8-LCC (1.5x3.2)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS:hh (24 hr)
Voltage - Supply: 1.3V ~ 4.4V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-LCC
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Packaging: Cut Tape (CT)
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PM8803TR PM8803TR STMicroelectronics en.DM00024225.pdf Description: IC POE CNTRL 1 CHANNEL 20HTSSOP
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Power - Max: 25.5 W
Number of Channels: 1
Part Status: Active
Auxiliary Sense: No
Supplier Device Package: 20-HTSSOP
Standards: 802.3at (PoE+), 802.3af (PoE)
Internal Switch(s): Both
Operating Temperature: -40°C ~ 85°C
Type: Controller (PD), DC/DC
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STEF05PUR STEF05PUR STMicroelectronics en.DM00034383.pdf Description: IC ELECTRONIC FUSE 10DFN
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3.6A
Voltage - Input: 3.1V ~ 10V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 12830 шт:
термін постачання 21-31 дні (днів)
4+78.38 грн
10+54.12 грн
25+48.85 грн
100+40.41 грн
250+37.82 грн
500+36.26 грн
1000+34.41 грн
Мінімальне замовлення: 4
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STEF12PUR STEF12PUR STMicroelectronics en.DM00034392.pdf Description: IC ELECTRONIC FUSE 10DFN
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3.6A
Voltage - Input: 7.6V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 10-DFN (3x3)
на замовлення 688 шт:
термін постачання 21-31 дні (днів)
4+99.54 грн
10+69.67 грн
25+63.13 грн
100+52.47 грн
250+49.25 грн
500+47.30 грн
Мінімальне замовлення: 4
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TS391RILT TS391RILT STMicroelectronics en.CD00001660.pdf Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 30V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 47834 шт:
термін постачання 21-31 дні (днів)
8+42.33 грн
11+29.29 грн
25+26.21 грн
100+21.47 грн
250+19.98 грн
500+19.08 грн
1000+18.04 грн
Мінімальне замовлення: 8
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STEVAL-ISV009V1 STEVAL-ISV009V1 STMicroelectronics STEVAL-ISV009V1_Br.pdf Description: EVAL BOARD FOR SPV1020
Packaging: Bulk
Voltage - Output: 36V
Frequency - Switching: 100kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: SPV1020
Supplied Contents: Board(s)
Main Purpose: Special Purpose, MPPT, Solar
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
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CPL-WB-00D3 STMicroelectronics Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.1dB
Applications: GSM, W-CDMA, WiMax
Coupling Factor: 34dB
Coupler Type: Standard
Return Loss: 15dB
Supplier Device Package: 6-FlipChip
Part Status: Obsolete
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DCPL-WB-00D3 DCPL-WB-00D3 STMicroelectronics en.sgipad.pdf Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Part Status: Active
Supplier Device Package: 8-FlipChip
Return Loss: 15dB
Coupler Type: Dual Band, Dual Path
Coupling Factor: 37dB
Applications: W-CDMA
Insertion Loss: 0.2dB
Frequency: 824MHz ~ 2.17GHz
Package / Case: 8-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
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LCDP1521SRL LCDP1521SRL STMicroelectronics en.CD00248637.pdf Description: THYRISTOR 60A 8SOIC
Current - Peak Pulse (8/20µs): 60 A
Current - Peak Pulse (10/1000µs): 25 A
Current - Hold (Ih): 150 mA
Supplier Device Package: 8-SOIC
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Capacitance: 35pF
Packaging: Tape & Reel (TR)
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STD155N3H6 STD155N3H6 STMicroelectronics en.DM00028021.pdf Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD155N3LH6 STD155N3LH6 STMicroelectronics STB155N3LH6.pdf Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+47.85 грн
Мінімальне замовлення: 2500
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STH250N55F3-6 STH250N55F3-6 STMicroelectronics STH250N55F3-6.pdf Description: MOSFET N-CH 55V 180A H2PAK
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
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STPS10M80CG-TR STPS10M80CG-TR STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS10SM80CG-TR STPS10SM80CG-TR STMicroelectronics Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS15M80CG-TR STPS15M80CG-TR STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS15SM80CG-TR STPS15SM80CG-TR STMicroelectronics DM00026510.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS20SM80CG-TR STPS20SM80CG-TR STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS30M80CG-TR STPS30M80CG-TR STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS30SM80CG-TR STPS30SM80CG-TR STMicroelectronics en.DM00026458.pdf Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
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STPS40SM80CG-TR STPS40SM80CG-TR STMicroelectronics STPS40SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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TN1205H-6G-TR TN1205H-6G-TR STMicroelectronics en.DM00022970.pdf Description: SCR 600V 12A D2PAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 5 µA
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MD2009DFP MD2009DFP STMicroelectronics MD2009DFP.pdf Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
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STB155N3H6 STB155N3H6 STMicroelectronics en.DM00028021.pdf Description: MOSFET N-CH 30V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STF18N55M5 STF18N55M5 STMicroelectronics STB_D_F_P18N55M5_Rev_3.pdf Description: MOSFET N-CH 550V 16A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STFW60N65M5 STFW60N65M5 STMicroelectronics en.CD00291091.pdf Description: MOSFET N-CH 650V 46A ISOWATT
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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STI12N65M5 STI12N65M5 STMicroelectronics en.CD00226268.pdf Description: MOSFET N-CH 650V 8.5A I2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
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STI16N65M5 STI16N65M5 STMicroelectronics STx16N65M5_Oct2011.pdf Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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STI21N65M5 STI21N65M5 STMicroelectronics stp21n65m5.pdf Description: MOSFET N-CH 650V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI260N6F6 STI260N6F6 STMicroelectronics en.CD00272622.pdf Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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STI30N65M5 STI30N65M5 STMicroelectronics en.CD00223067.pdf Description: MOSFET N-CH 650V 22A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI32N65M5 STI32N65M5 STMicroelectronics en.CD00222634.pdf Description: MOSFET N-CH 650V 24A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI35N65M5 STI35N65M5 STMicroelectronics en.CD00222927.pdf Description: MOSFET N-CH 650V 27A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI8N65M5 STI8N65M5 STMicroelectronics en.CD00253250.pdf Description: MOSFET N-CH 650V 7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STP210N75F6 STP210N75F6 STMicroelectronics STP210N75F6.pdf Description: MOSFET N-CH 75V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP34NM60ND STP34NM60ND STMicroelectronics STx34NM60ND_DS.pdf Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
1+790.87 грн
50+429.29 грн
100+397.33 грн
500+345.39 грн
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STP75N3LLH6 STP75N3LLH6 STMicroelectronics STD%2CSTP%2CSTU75N3LLH6%28-S%29.pdf Description: MOSFET N-CH 30V 75A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP7NM60N STP7NM60N STMicroelectronics en.CD00252114.pdf Description: MOSFET N-CH 600V 5A TO220
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
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STPS10M80CFP STPS10M80CFP STMicroelectronics STPS10M80C.pdf Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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STPS10M80CR STPS10M80CR STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS10M80CT STPS10M80CT STMicroelectronics STPS10M80C.pdf Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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STPS10SM80CFP STPS10SM80CFP STMicroelectronics power-schottky-medium-vf-and-ir.html Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CR STPS10SM80CR STMicroelectronics Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CT STPS10SM80CT STMicroelectronics Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS15M80CFP STPS15M80CFP STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Supplier Device Package: TO-220 Full Pack
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
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STPS15M80CR STPS15M80CR STMicroelectronics STPS15M80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15M80CT STPS15M80CT STMicroelectronics STPS15M80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A TO220
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
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STPS15SM80CFP STPS15SM80CFP STMicroelectronics STPS15SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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STPS15SM80CR STPS15SM80CR STMicroelectronics STPS15SM80C.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15SM80CT STPS15SM80CT STMicroelectronics STPS15SM80C.pdf Description: DIODE ARR SCHOTT 80V 7.5A TO220
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS20SM80CFP STPS20SM80CFP STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STPS20SM80CR STPS20SM80CR STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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STPS20SM80CT STPS20SM80CT STMicroelectronics en.DM00026449.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS30M80CFP STPS30M80CFP STMicroelectronics en.DM00026451.pdf Description: DIODE ARR SCHOTT 80V TO220AB FP
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
3+137.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STPS30M80CR STPS30M80CR STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS30M80CT STPS30M80CT STMicroelectronics en.DM00026451.pdf Description: DIODE ARRAY SCHOTTKY 80V TO220AB
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STPS30SM80CR STPS30SM80CR STMicroelectronics DM00026458.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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STPS30SM80CT STPS30SM80CT STMicroelectronics en.DM00026458.pdf Description: DIODE ARR SCHOTT 80V 15A TO220
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS40M80CR STPS40M80CR STMicroelectronics en.DM00026447.pdf Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS40M80CT STPS40M80CT STMicroelectronics en.DM00026447.pdf Description: DIODE ARR SCHOTT 80V 20A TO220
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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LM4041DICT-1.2 en.DM00028684.pdf
LM4041DICT-1.2
Виробник: STMicroelectronics
Description: IC VREF SHUNT 1% SOT323-5
Current - Output: 12 mA
Current - Cathode: 50 µA
Noise - 10Hz to 10kHz: 60µVrms
Voltage - Output (Min/Fixed): 1.225V
Supplier Device Package: SOT-323-5
Operating Temperature: -40°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Fixed
Temperature Coefficient: 100ppm/°C
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Tolerance: ±1%
Packaging: Cut Tape (CT)
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M41T62LC6F en.CD00019860.pdf
M41T62LC6F
Виробник: STMicroelectronics
Description: IC RTC CLK/CALENDAR I2C 8LCC
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Timekeeping (Max): 0.7µA ~ 0.95µA @ 1.3V ~ 4.4V
Supplier Device Package: 8-LCC (1.5x3.2)
Date Format: YY-MM-DD-dd
Time Format: HH:MM:SS:hh (24 hr)
Voltage - Supply: 1.3V ~ 4.4V
Operating Temperature: -40°C ~ 85°C
Type: Clock/Calendar
Interface: I2C, 2-Wire Serial
Mounting Type: Surface Mount
Package / Case: 8-LCC
Features: Alarm, Leap Year, Square Wave Output, Watchdog Timer
Packaging: Cut Tape (CT)
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PM8803TR en.DM00024225.pdf
PM8803TR
Виробник: STMicroelectronics
Description: IC POE CNTRL 1 CHANNEL 20HTSSOP
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Power - Max: 25.5 W
Number of Channels: 1
Part Status: Active
Auxiliary Sense: No
Supplier Device Package: 20-HTSSOP
Standards: 802.3at (PoE+), 802.3af (PoE)
Internal Switch(s): Both
Operating Temperature: -40°C ~ 85°C
Type: Controller (PD), DC/DC
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STEF05PUR en.DM00034383.pdf
STEF05PUR
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3.6A
Voltage - Input: 3.1V ~ 10V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
на замовлення 12830 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+78.38 грн
10+54.12 грн
25+48.85 грн
100+40.41 грн
250+37.82 грн
500+36.26 грн
1000+34.41 грн
Мінімальне замовлення: 4
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STEF12PUR en.DM00034392.pdf
STEF12PUR
Виробник: STMicroelectronics
Description: IC ELECTRONIC FUSE 10DFN
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Output: 3.6A
Voltage - Input: 7.6V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 10-DFN (3x3)
на замовлення 688 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.54 грн
10+69.67 грн
25+63.13 грн
100+52.47 грн
250+49.25 грн
500+47.30 грн
Мінімальне замовлення: 4
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TS391RILT en.CD00001660.pdf
TS391RILT
Виробник: STMicroelectronics
Description: IC COMPARATOR 1 GEN PUR SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: CMOS, DTL, ECL, MOS, TTL
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: SOT-23-5
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 30V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 47834 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.33 грн
11+29.29 грн
25+26.21 грн
100+21.47 грн
250+19.98 грн
500+19.08 грн
1000+18.04 грн
Мінімальне замовлення: 8
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STEVAL-ISV009V1 STEVAL-ISV009V1_Br.pdf
STEVAL-ISV009V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR SPV1020
Packaging: Bulk
Voltage - Output: 36V
Frequency - Switching: 100kHz
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: SPV1020
Supplied Contents: Board(s)
Main Purpose: Special Purpose, MPPT, Solar
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
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CPL-WB-00D3
Виробник: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, FCBGA
Frequency: 824MHz ~ 2.17GHz
Insertion Loss: 0.1dB
Applications: GSM, W-CDMA, WiMax
Coupling Factor: 34dB
Coupler Type: Standard
Return Loss: 15dB
Supplier Device Package: 6-FlipChip
Part Status: Obsolete
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DCPL-WB-00D3 en.sgipad.pdf
DCPL-WB-00D3
Виробник: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Part Status: Active
Supplier Device Package: 8-FlipChip
Return Loss: 15dB
Coupler Type: Dual Band, Dual Path
Coupling Factor: 37dB
Applications: W-CDMA
Insertion Loss: 0.2dB
Frequency: 824MHz ~ 2.17GHz
Package / Case: 8-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
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LCDP1521SRL en.CD00248637.pdf
LCDP1521SRL
Виробник: STMicroelectronics
Description: THYRISTOR 60A 8SOIC
Current - Peak Pulse (8/20µs): 60 A
Current - Peak Pulse (10/1000µs): 25 A
Current - Hold (Ih): 150 mA
Supplier Device Package: 8-SOIC
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Capacitance: 35pF
Packaging: Tape & Reel (TR)
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STD155N3H6 en.DM00028021.pdf
STD155N3H6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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STD155N3LH6 STB155N3LH6.pdf
STD155N3LH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+47.85 грн
Мінімальне замовлення: 2500
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STH250N55F3-6 STH250N55F3-6.pdf
STH250N55F3-6
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 180A H2PAK
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
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STPS10M80CG-TR STPS10M80C.pdf
STPS10M80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS10SM80CG-TR
STPS10SM80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS15M80CG-TR STPS15M80C.pdf
STPS15M80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS15SM80CG-TR DM00026510.pdf
STPS15SM80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS20SM80CG-TR en.DM00026449.pdf
STPS20SM80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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STPS30M80CG-TR en.DM00026451.pdf
STPS30M80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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STPS30SM80CG-TR en.DM00026458.pdf
STPS30SM80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
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STPS40SM80CG-TR STPS40SM80C.pdf
STPS40SM80CG-TR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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TN1205H-6G-TR en.DM00022970.pdf
TN1205H-6G-TR
Виробник: STMicroelectronics
Description: SCR 600V 12A D2PAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 5 µA
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MD2009DFP MD2009DFP.pdf
MD2009DFP
Виробник: STMicroelectronics
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
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STB155N3H6 en.DM00028021.pdf
STB155N3H6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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STF18N55M5 STB_D_F_P18N55M5_Rev_3.pdf
STF18N55M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 16A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STFW60N65M5 en.CD00291091.pdf
STFW60N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 46A ISOWATT
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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STI12N65M5 en.CD00226268.pdf
STI12N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A I2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
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STI16N65M5 STx16N65M5_Oct2011.pdf
STI16N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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STI21N65M5 stp21n65m5.pdf
STI21N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI260N6F6 en.CD00272622.pdf
STI260N6F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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STI30N65M5 en.CD00223067.pdf
STI30N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI32N65M5 en.CD00222634.pdf
STI32N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI35N65M5 en.CD00222927.pdf
STI35N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 27A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STI8N65M5 en.CD00253250.pdf
STI8N65M5
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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STP210N75F6 STP210N75F6.pdf
STP210N75F6
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP34NM60ND STx34NM60ND_DS.pdf
STP34NM60ND
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+790.87 грн
50+429.29 грн
100+397.33 грн
500+345.39 грн
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STP75N3LLH6 STD%2CSTP%2CSTU75N3LLH6%28-S%29.pdf
STP75N3LLH6
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STP7NM60N en.CD00252114.pdf
STP7NM60N
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
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STPS10M80CFP STPS10M80C.pdf
STPS10M80CFP
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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STPS10M80CR STPS10M80C.pdf
STPS10M80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS10M80CT STPS10M80C.pdf
STPS10M80CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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STPS10SM80CFP power-schottky-medium-vf-and-ir.html
STPS10SM80CFP
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CR
STPS10SM80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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STPS10SM80CT
STPS10SM80CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS15M80CFP STPS15M80C.pdf
STPS15M80CFP
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Supplier Device Package: TO-220 Full Pack
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
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STPS15M80CR STPS15M80C.pdf
STPS15M80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15M80CT STPS15M80C.pdf
STPS15M80CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
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STPS15SM80CFP STPS15SM80C.pdf
STPS15SM80CFP
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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STPS15SM80CR STPS15SM80C.pdf
STPS15SM80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS15SM80CT STPS15SM80C.pdf
STPS15SM80CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS20SM80CFP en.DM00026449.pdf
STPS20SM80CFP
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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STPS20SM80CR en.DM00026449.pdf
STPS20SM80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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STPS20SM80CT en.DM00026449.pdf
STPS20SM80CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS30M80CFP en.DM00026451.pdf
STPS30M80CFP
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.17 грн
Мінімальне замовлення: 3
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STPS30M80CR en.DM00026451.pdf
STPS30M80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS30M80CT en.DM00026451.pdf
STPS30M80CT
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
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STPS30SM80CR DM00026458.pdf
STPS30SM80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
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STPS30SM80CT en.DM00026458.pdf
STPS30SM80CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 15A TO220
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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STPS40M80CR en.DM00026447.pdf
STPS40M80CR
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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STPS40M80CT en.DM00026447.pdf
STPS40M80CT
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 20A TO220
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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