Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (129402) > Сторінка 288 з 2157
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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DCPL-WB-00D3 | STMicroelectronics |
 Description: RF DIR COUPL 824MHZ-2.17GHZ FLIPPart Status: Active Supplier Device Package: 8-FlipChip Return Loss: 15dB Coupler Type: Dual Band, Dual Path Coupling Factor: 37dB Applications: W-CDMA Insertion Loss: 0.2dB Frequency: 824MHz ~ 2.17GHz Package / Case: 8-UFBGA, FCBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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LCDP1521SRL | STMicroelectronics |
Description: THYRISTOR 60A 8SOIC Current - Peak Pulse (8/20µs): 60 A Current - Peak Pulse (10/1000µs): 25 A Current - Hold (Ih): 150 mA Supplier Device Package: 8-SOIC Number of Elements: 2 Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Capacitance: 35pF Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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STD155N3H6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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STD155N3LH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STH250N55F3-6 | STMicroelectronics |
Description: MOSFET N-CH 55V 180A H2PAK Current - Continuous Drain (Id) @ 25°C: 180A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: H2PAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10M80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK Current - Reverse Leakage @ Vr: 20 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK Current - Reverse Leakage @ Vr: 15 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS15M80CG-TR | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS20SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS30M80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS30SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK Supplier Device Package: D2PAK Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 40 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS40SM80CG-TR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V D2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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TN1205H-6G-TR | STMicroelectronics |
Description: SCR 600V 12A D2PAK Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 12 A Part Status: Active Supplier Device Package: D2PAK Voltage - On State (Vtm) (Max): 1.6 V Voltage - Gate Trigger (Vgt) (Max): 1.3 V Current - On State (It (AV)) (Max): 7.6 A Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Current - Gate Trigger (Igt) (Max): 5 mA Current - Hold (Ih) (Max): 20 mA Operating Temperature: -40°C ~ 150°C SCR Type: Standard Recovery Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) Current - Off State (Max): 5 µA |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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MD2009DFP | STMicroelectronics |
Description: TRANS NPN 700V 10A TO-220 FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A Current - Collector Cutoff (Max): 200µA DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V Supplier Device Package: TO-220 Full Pack Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 700 V Power - Max: 40 W |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STB155N3H6 | STMicroelectronics |
Description: MOSFET N-CH 30V 80A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STF18N55M5 | STMicroelectronics |
Description: MOSFET N-CH 550V 16A TO220FP Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 550 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220FP Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STFW60N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 46A ISOWATT Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-3PF Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Packaging: Tube Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 |
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В кошику од. на суму грн. | ||||||||||
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STI12N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 8.5A I2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI21N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 17A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STI260N6F6 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A I2PAK Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 4V @ 250µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI30N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 22A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 140W (Tc) Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI32N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 24A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STI35N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 27A I2PAK Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STI8N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 7A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STP210N75F6 | STMicroelectronics |
Description: MOSFET N-CH 75V 120A TO220 Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STP34NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
на замовлення 621 шт: термін постачання 21-31 дні (днів) |
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STP75N3LLH6 | STMicroelectronics |
Description: MOSFET N-CH 30V 75A TO220 Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STP7NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 5A TO220 Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 45W (Tc) |
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В кошику од. на суму грн. | ||||||||||
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STPS10M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220AB Full-Pak Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS10M80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A Current - Reverse Leakage @ Vr: 20 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOT 80V 5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: TO-220 Full Pack Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A Supplier Device Package: I2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Current - Reverse Leakage @ Vr: 15 µA @ 80 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS10SM80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB Current - Reverse Leakage @ Vr: 15 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOT 80V 7.5A TO220FP Supplier Device Package: TO-220 Full Pack Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15M80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A TO220 Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220FP |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS15SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS15SM80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 7.5A TO220 Current - Reverse Leakage @ Vr: 20 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 7.5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS20SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220FP Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220AB Full-Pak Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS20SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: I2PAK Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS20SM80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB Current - Reverse Leakage @ Vr: 25 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS30M80CFP | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V TO220AB FP Current - Reverse Leakage @ Vr: 40 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Obsolete Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220AB Full-Pak Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
на замовлення 29 шт: термін постачання 21-31 дні (днів) |
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STPS30M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS30M80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS30SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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STPS30SM80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 15A TO220 Current - Reverse Leakage @ Vr: 40 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A Voltage - DC Reverse (Vr) (Max): 80 V Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 15A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS40M80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||
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STPS40M80CT | STMicroelectronics |
Description: DIODE ARR SCHOTT 80V 20A TO220 Current - Reverse Leakage @ Vr: 65 µA @ 80 V Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 175°C (Max) Supplier Device Package: TO-220 Current - Average Rectified (Io) (per Diode): 20A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||
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STPS40SM80CFP | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220FP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS40SM80CR | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V I2PAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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STPS40SM80CT | STMicroelectronics |
Description: DIODE ARRAY SCHOTTKY 80V TO220AB |
на замовлення 32 шт: термін постачання 21-31 дні (днів) |
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STPSC2006CW | STMicroelectronics |
Description: DIODE ARRAY SIC 600V 10A TO-247 Current - Reverse Leakage @ Vr: 150 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -40°C ~ 175°C Supplier Device Package: TO-247 Current - Average Rectified (Io) (per Diode): 10A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
на замовлення 708 шт: термін постачання 21-31 дні (днів) |
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STU8N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 7A IPAK Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-251 (IPAK) Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 70W (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||
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STW34NM60ND | STMicroelectronics |
Description: MOSFET N-CH 600V 29A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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STW48NM60N | STMicroelectronics |
Description: MOSFET N-CH 600V 44A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4285 pF @ 50 V |
на замовлення 373 шт: термін постачання 21-31 дні (днів) |
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TN1205H-6T | STMicroelectronics |
Description: SCR 600V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 150°C Current - Hold (Ih) (Max): 20 mA Current - Gate Trigger (Igt) (Max): 5 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A Current - On State (It (AV)) (Max): 7.6 A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Voltage - On State (Vtm) (Max): 1.6 V Current - Off State (Max): 5 µA Supplier Device Package: TO-220 Part Status: Active Current - On State (It (RMS)) (Max): 12 A Voltage - Off State: 600 V |
на замовлення 1913 шт: термін постачання 21-31 дні (днів) |
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| DCPL-WB-00D3 |
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Виробник: STMicroelectronics
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Part Status: Active
Supplier Device Package: 8-FlipChip
Return Loss: 15dB
Coupler Type: Dual Band, Dual Path
Coupling Factor: 37dB
Applications: W-CDMA
Insertion Loss: 0.2dB
Frequency: 824MHz ~ 2.17GHz
Package / Case: 8-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
Description: RF DIR COUPL 824MHZ-2.17GHZ FLIP
Part Status: Active
Supplier Device Package: 8-FlipChip
Return Loss: 15dB
Coupler Type: Dual Band, Dual Path
Coupling Factor: 37dB
Applications: W-CDMA
Insertion Loss: 0.2dB
Frequency: 824MHz ~ 2.17GHz
Package / Case: 8-UFBGA, FCBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| LCDP1521SRL |
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Виробник: STMicroelectronics
Description: THYRISTOR 60A 8SOIC
Current - Peak Pulse (8/20µs): 60 A
Current - Peak Pulse (10/1000µs): 25 A
Current - Hold (Ih): 150 mA
Supplier Device Package: 8-SOIC
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Capacitance: 35pF
Packaging: Tape & Reel (TR)
Description: THYRISTOR 60A 8SOIC
Current - Peak Pulse (8/20µs): 60 A
Current - Peak Pulse (10/1000µs): 25 A
Current - Hold (Ih): 150 mA
Supplier Device Package: 8-SOIC
Number of Elements: 2
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Capacitance: 35pF
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD155N3H6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 80A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| STD155N3LH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
Description: MOSFET N-CH 30V 80A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 47.21 грн |
| STH250N55F3-6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 55V 180A H2PAK
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
Description: MOSFET N-CH 55V 180A H2PAK
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: H2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 60A, 10V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS10M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| STPS10SM80CG-TR |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 80V 5A D2PAK
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| STPS15M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARR SCHOTT 80V 7.5A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| STPS15SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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| STPS20SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY SCHOTT 80V 10A D2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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| STPS30M80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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| STPS30SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Description: DIODE ARRAY SCHOTT 80V 15A D2PAK
Supplier Device Package: D2PAK
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
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| STPS40SM80CG-TR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
Description: DIODE ARRAY SCHOTTKY 80V D2PAK
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| TN1205H-6G-TR |
|
Виробник: STMicroelectronics
Description: SCR 600V 12A D2PAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 5 µA
Description: SCR 600V 12A D2PAK
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 12 A
Part Status: Active
Supplier Device Package: D2PAK
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Current - On State (It (AV)) (Max): 7.6 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Hold (Ih) (Max): 20 mA
Operating Temperature: -40°C ~ 150°C
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Current - Off State (Max): 5 µA
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| MD2009DFP |
|
Виробник: STMicroelectronics
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
Description: TRANS NPN 700V 10A TO-220 FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.8V @ 1.4A, 5.5A
Current - Collector Cutoff (Max): 200µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 5.5A, 5V
Supplier Device Package: TO-220 Full Pack
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 700 V
Power - Max: 40 W
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| STB155N3H6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 80A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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| STF18N55M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 550V 16A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 550V 16A TO220FP
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 550 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220FP
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 192mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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| STFW60N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 46A ISOWATT
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Description: MOSFET N-CH 650V 46A ISOWATT
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 6810 pF @ 100 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
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| STI12N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 8.5A I2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
Description: MOSFET N-CH 650V 8.5A I2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Tc)
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| STI16N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 279mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
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| STI21N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 650V 17A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 179mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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| STI260N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Description: MOSFET N-CH 75V 120A I2PAK
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
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| STI30N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 22A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 650V 22A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 140W (Tc)
Rds On (Max) @ Id, Vgs: 139mOhm @ 11A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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| STI32N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 24A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 650V 24A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 119mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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| STI35N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 27A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 650V 27A I2PAK
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3750 pF @ 100 V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 98mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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| STI8N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 650V 7A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
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Мінімальне замовлення: 1000 шт
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| STP210N75F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 75V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 75V 120A TO220
Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 171 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP34NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Description: MOSFET N-CH 600V 29A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
на замовлення 621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 794.06 грн |
| 50+ | 455.54 грн |
| STP75N3LLH6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 75A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 75A TO220
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STP7NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A TO220
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
Description: MOSFET N-CH 600V 5A TO220
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 363 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 45W (Tc)
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| STPS10M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARR SCHOTT 80V TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB Full-Pak
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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Мінімальне замовлення: 1000 шт
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| STPS10M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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| STPS10M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 705 mV @ 5 A
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
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Мінімальне замовлення: 1000 шт
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| STPS10SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOT 80V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220 Full Pack
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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Мінімальне замовлення: 1000 шт
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| STPS10SM80CR |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Description: DIODE ARRAY SCHOTT 80V 5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: I2PAK
Operating Temperature - Junction: 175°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
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Мінімальне замовлення: 1000 шт
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| STPS10SM80CT |
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 15 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STPS15M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Supplier Device Package: TO-220 Full Pack
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Description: DIODE ARR SCHOT 80V 7.5A TO220FP
Supplier Device Package: TO-220 Full Pack
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
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| STPS15M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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| STPS15M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 725 mV @ 7.5 A
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| STPS15SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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Мінімальне замовлення: 1000 шт
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| STPS15SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
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| STPS15SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 80V 7.5A TO220
Current - Reverse Leakage @ Vr: 20 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 7.5 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 7.5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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| STPS20SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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В кошику
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| STPS20SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: I2PAK
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
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| STPS20SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Current - Reverse Leakage @ Vr: 25 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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В кошику
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| STPS30M80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V TO220AB FP
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: DIODE ARR SCHOTT 80V TO220AB FP
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 745 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220AB Full-Pak
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 135.31 грн |
| STPS30M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
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| STPS30M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS30SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| STPS30SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 15A TO220
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 80V 15A TO220
Current - Reverse Leakage @ Vr: 40 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 80 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS40M80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| STPS40M80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARR SCHOTT 80V 20A TO220
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: DIODE ARR SCHOTT 80V 20A TO220
Current - Reverse Leakage @ Vr: 65 µA @ 80 V
Voltage - Forward (Vf) (Max) @ If: 735 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: TO-220
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| STPS40SM80CFP |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
Description: DIODE ARRAY SCHOTTKY 80V TO220FP
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В кошику
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| STPS40SM80CR |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
Description: DIODE ARRAY SCHOTTKY 80V I2PAK
товару немає в наявності
В кошику
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| STPS40SM80CT |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
Description: DIODE ARRAY SCHOTTKY 80V TO220AB
на замовлення 32 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.22 грн |
| 10+ | 194.10 грн |
| STPSC2006CW |
|
Виробник: STMicroelectronics
Description: DIODE ARRAY SIC 600V 10A TO-247
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARRAY SIC 600V 10A TO-247
Current - Reverse Leakage @ Vr: 150 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-247
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
на замовлення 708 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 689.68 грн |
| 30+ | 390.51 грн |
| 120+ | 330.47 грн |
| 510+ | 280.44 грн |
| STU8N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 650V 7A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 3000 шт
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| STW34NM60ND |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
Description: MOSFET N-CH 600V 29A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 80.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 801.79 грн |
| STW48NM60N |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4285 pF @ 50 V
Description: MOSFET N-CH 600V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4285 pF @ 50 V
на замовлення 373 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 670.35 грн |
| 30+ | 379.40 грн |
| 120+ | 320.95 грн |
| TN1205H-6T |
|
Виробник: STMicroelectronics
Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 150°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 126A
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Voltage - On State (Vtm) (Max): 1.6 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-220
Part Status: Active
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
на замовлення 1913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 72.68 грн |
| 50+ | 56.14 грн |
| 100+ | 44.49 грн |
| 500+ | 35.39 грн |
| 1000+ | 28.83 грн |