Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164812) > Сторінка 378 з 2747
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FERD20U50DJF-TR | STMicroelectronics |
 Description: DIODE FERD 50V 20A POWERFLATPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 50 V |
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FERD20U60DJF-TR | STMicroelectronics |
Description: DIODE FERD 60V 20A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 60 V |
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LCP22-150B1RL | STMicroelectronics |
Description: IC TELECOM INTERFACE 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -55°C ~ 125°C Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 |
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LD39200DPUR | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 2A 8-DFN Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 8-DFN (4x4) Voltage - Output (Max): 5.75V Voltage - Output (Min/Fixed): 0.5V Control Features: Enable, Power Good Part Status: Active PSRR: 70dB ~ 40dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.25V @ 2A Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3 mA |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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SEA01TR | STMicroelectronics |
Description: IC CTRLR CV/CC ONLINE TRIM 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Supplier Device Package: 8-SOIC Voltage - Supply (Max): 36V |
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STB10N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 8A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V |
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STB28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STB33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
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STB40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STB46N30M5 | STMicroelectronics |
Description: MOSFET N-CH 300V 53A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V Qualification: AEC-Q101 |
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STB6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
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STD5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V |
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STD6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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STGB10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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STGB15H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 30A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 115 W |
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STGB20V60F | STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
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STGB40V60F | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
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STH150N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 110A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V |
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STH80N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A H2PAK-2 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
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STL105NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 105A POWERFLAT |
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STL10N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 5.5A PWRFLAT56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V |
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STL13DP10F6 | STMicroelectronics |
Description: MOSFET 2P-CH 100V 13A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Obsolete |
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STL13N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 7A POWERFLAT HV Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V |
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STL160NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 160A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V |
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STL20DN10F7 | STMicroelectronics |
Description: MOSFET 2N-CH 100V 20A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
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STL220N3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 220A POWERFLAT56 |
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STL33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A PWRFLAT HV Packaging: Tape & Reel (TR) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V |
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STL4N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT |
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STL7N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STL8N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
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STL9N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 4.8A PWRFLAT56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V |
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BAL-CC1101-01D3 | STMicroelectronics |
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 779MHz ~ 928MHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.9dB Return Loss (Min): -15dB Phase Difference: 10° Part Status: Not For New Designs |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ECMF04-4HSWM10 | STMicroelectronics |
Description: CMC 100MA 4LN SMD ESD Packaging: Tape & Reel (TR) Features: TVS Diode ESD Protection Package / Case: 10-UFDFN Filter Type: Signal Line Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.022" (0.55mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 5Ohm (Typ) Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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EMIF06-USD05F3 | STMicroelectronics |
Description: FILTER RLC 40 OHMS/11PF ESD SMD Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, FCBGA Size / Dimension: 0.062" L x 0.062" W (1.57mm x 1.57mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 40Ohms, C = 11pF Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 900MHz Filter Order: 3rd Applications: Data Lines for Mobile Devices Technology: RLC Center / Cutoff Frequency: 300MHz (Cutoff) Resistance - Channel (Ohms): 40 ESD Protection: Yes Number of Channels: 6 |
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ESDALC5-1BT2Y | STMicroelectronics |
Description: TVS DIODE 5VWM 17.5VC SOD882T Packaging: Tape & Reel (TR) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-882T Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 17.5V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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ESDALC8-1BF4 | STMicroelectronics |
Description: TVS DIODE 6VWM 16VC 0201 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8.6A (8/20µs) Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power - Peak Pulse: 165W Power Line Protection: No Part Status: Active |
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ESDAULC5-1BF4 | STMicroelectronics |
Description: TVS DIODE 3VWM 13.5VC 0201 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 13.5V (Typ) Power - Peak Pulse: 140W Power Line Protection: No Part Status: Active |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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STL3N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 4A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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STL4P2UH7 | STMicroelectronics |
Description: MOSFET P-CH 20V 4A PWRFLAT2X2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STL8P2UH7 | STMicroelectronics |
Description: MOSFET P-CH 20V 8A POWERFLAT Packaging: Tape & Reel (TR) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4A, 4.5V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V |
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STF150N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 65A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220FP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||
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STF6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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STFI28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-281 (I2PAKFP) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||
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STFI6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A I2PAKFP Packaging: Tube Package / Case: TO-262-3 Full Pack, I2PAK Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-281 (I2PAKFP) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||
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STFW24N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 18A TO3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V |
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STFW38N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 30A ISOWATT Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
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STGFW20V60DF | STMicroelectronics |
Description: IGBT 600V 40A 52W TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 40 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-3PF IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 52 W |
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В кошику од. на суму грн. | ||||||||||||
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STGFW30V60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 60A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-3PF IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 45ns/189ns Switching Energy: 383µJ (on), 233µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 163 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 58 W |
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STGFW40V60F | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-3PF IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 62.5 W |
товару немає в наявності |
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STGFW80V60F | STMicroelectronics |
Description: IGBT TRENCH FS 600V 120A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A Supplier Device Package: TO-3PF IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 60ns/220ns Switching Energy: 1.8mJ (on), 1mJ (off) Test Condition: 400V, 80A, 10Ohm, 15V Gate Charge: 448 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 240 A Power - Max: 79 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STGIPS10C60 | STMicroelectronics |
Description: MOD IPM SLLIMM 10A 600V 25SDIP Packaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STGIPS10C60-H | STMicroelectronics |
Description: IGBT IPM 600V 10A 25-PWRDIP MOD Packaging: Tube Package / Case: 25-PowerDIP Module (0.993", 25.23mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STI150N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 110A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V |
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В кошику од. на суму грн. | ||||||||||||
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STI33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||
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STI6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-262 (I2PAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
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STP6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||
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STP90N6F6 | STMicroelectronics |
Description: MOSFET N-CH 60V 84A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 38.5A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 74.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4295 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||
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STU2N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 2A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V |
на замовлення 3034 шт: термін постачання 21-31 дні (днів) |
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STW13N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 11A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V |
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В кошику од. на суму грн. | ||||||||||||
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T610T-8FP | STMicroelectronics |
Description: TRIAC SENS GATE 800V TO-220FPAB Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Triac Type: Logic - Sensitive Gate Configuration: Single Operating Temperature: -40°C ~ 150°C (TJ) Current - Hold (Ih) (Max): 15 mA Current - Gate Trigger (Igt) (Max): 10 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: TO-220FPAB Part Status: Active Current - On State (It (RMS)) (Max): 6 A Voltage - Off State: 800 V |
на замовлення 860 шт: термін постачання 21-31 дні (днів) |
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| FERD20U50DJF-TR |
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Виробник: STMicroelectronics
Description: DIODE FERD 50V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Description: DIODE FERD 50V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
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| FERD20U60DJF-TR |
|
Виробник: STMicroelectronics
Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
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| LCP22-150B1RL |
|
Виробник: STMicroelectronics
Description: IC TELECOM INTERFACE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Description: IC TELECOM INTERFACE 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
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| LD39200DPUR |
|
Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 34.90 грн |
| 9000+ | 32.90 грн |
| 13500+ | 32.55 грн |
| SEA01TR |
Виробник: STMicroelectronics
Description: IC CTRLR CV/CC ONLINE TRIM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 36V
Description: IC CTRLR CV/CC ONLINE TRIM 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Supplier Device Package: 8-SOIC
Voltage - Supply (Max): 36V
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| STB10N95K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
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| STB28N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 64.19 грн |
| STB33N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
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| STB40N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 166.85 грн |
| STB46N30M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
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| STB6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
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| STD5N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
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| STD6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 52.44 грн |
| 5000+ | 48.95 грн |
| STGB10H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 53.99 грн |
| 2000+ | 48.17 грн |
| STGB15H60DF |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
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| STGB20V60F |
|
Виробник: STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT 600V 40A 167W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
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| STGB40V60F |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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| STH150N10F7-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
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| STH80N10F7-2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
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| STL105NS3LLH7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 105A POWERFLAT
Description: MOSFET N-CH 30V 105A POWERFLAT
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| STL10N60M2 |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5.5A PWRFLAT56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
Description: MOSFET N-CH 600V 5.5A PWRFLAT56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 100 V
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| STL13DP10F6 |
Виробник: STMicroelectronics
Description: MOSFET 2P-CH 100V 13A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Description: MOSFET 2P-CH 100V 13A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A
Input Capacitance (Ciss) (Max) @ Vds: 864pF @ 25V
Rds On (Max) @ Id, Vgs: 180mOhm @ 1.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
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| STL13N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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| STL160NS3LLH7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
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| STL20DN10F7 |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
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| STL220N3LLH7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 220A POWERFLAT56
Description: MOSFET N-CH 30V 220A POWERFLAT56
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| STL33N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
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| STL4N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
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| STL7N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 32.27 грн |
| STL8N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
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| STL9N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
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| BAL-CC1101-01D3 |
|
Виробник: STMicroelectronics
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 15.53 грн |
| ECMF04-4HSWM10 |
|
Виробник: STMicroelectronics
Description: CMC 100MA 4LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
Description: CMC 100MA 4LN SMD ESD
Packaging: Tape & Reel (TR)
Features: TVS Diode ESD Protection
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 26.31 грн |
| EMIF06-USD05F3 |
Виробник: STMicroelectronics
Description: FILTER RLC 40 OHMS/11PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.062" L x 0.062" W (1.57mm x 1.57mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 11pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 900MHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RLC
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RLC 40 OHMS/11PF ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.062" L x 0.062" W (1.57mm x 1.57mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 11pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 900MHz
Filter Order: 3rd
Applications: Data Lines for Mobile Devices
Technology: RLC
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
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| ESDALC5-1BT2Y |
|
Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12000+ | 4.19 грн |
| ESDALC8-1BF4 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 6VWM 16VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power - Peak Pulse: 165W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6VWM 16VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power - Peak Pulse: 165W
Power Line Protection: No
Part Status: Active
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| ESDAULC5-1BF4 |
|
Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15000+ | 2.74 грн |
| STL3N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
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| STL4P2UH7 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 4A PWRFLAT2X2
Description: MOSFET P-CH 20V 4A PWRFLAT2X2
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| STL8P2UH7 |
|
Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
Description: MOSFET P-CH 20V 8A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 4A, 4.5V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 16 V
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| STF150N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 65A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
Description: MOSFET N-CH 100V 65A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
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| STF6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.48 грн |
| 50+ | 101.41 грн |
| 100+ | 91.44 грн |
| 500+ | 69.41 грн |
| STFI28N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 22A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 600V 22A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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| STFI6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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| STFW24N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
Description: MOSFET N-CH 600V 18A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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| STFW38N65M5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 30A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Description: MOSFET N-CH 650V 30A ISOWATT
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
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| STGFW20V60DF |
|
Виробник: STMicroelectronics
Description: IGBT 600V 40A 52W TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 52 W
Description: IGBT 600V 40A 52W TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 52 W
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| STGFW30V60DF |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 58 W
Description: IGBT TRENCH FS 600V 60A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 45ns/189ns
Switching Energy: 383µJ (on), 233µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 163 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 58 W
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| STGFW40V60F |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
Description: IGBT TRENCH FS 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 62.5 W
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| STGFW80V60F |
|
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 120A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/220ns
Switching Energy: 1.8mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 448 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 79 W
Description: IGBT TRENCH FS 600V 120A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 80A
Supplier Device Package: TO-3PF
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 60ns/220ns
Switching Energy: 1.8mJ (on), 1mJ (off)
Test Condition: 400V, 80A, 10Ohm, 15V
Gate Charge: 448 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 79 W
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| STGIPS10C60 |
Виробник: STMicroelectronics
Description: MOD IPM SLLIMM 10A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: MOD IPM SLLIMM 10A 600V 25SDIP
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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| STGIPS10C60-H |
|
Виробник: STMicroelectronics
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: IGBT IPM 600V 10A 25-PWRDIP MOD
Packaging: Tube
Package / Case: 25-PowerDIP Module (0.993", 25.23mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
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| STI150N10F7 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 110A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
Description: MOSFET N-CH 100V 110A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
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| STI33N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
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| STI6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
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| STP6N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
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| STP90N6F6 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 84A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 38.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 74.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4295 pF @ 25 V
Description: MOSFET N-CH 60V 84A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 38.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 74.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4295 pF @ 25 V
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| STU2N80K5 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Description: MOSFET N-CH 800V 2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.5Ohm @ 1A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
на замовлення 3034 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 143.59 грн |
| 75+ | 60.33 грн |
| 150+ | 52.57 грн |
| 525+ | 43.12 грн |
| 1050+ | 37.42 грн |
| 2025+ | 37.16 грн |
| STW13N60M2 |
|
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Description: MOSFET N-CH 600V 11A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
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| T610T-8FP |
|
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V TO-220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
Description: TRIAC SENS GATE 800V TO-220FPAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Hold (Ih) (Max): 15 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 45A, 47A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-220FPAB
Part Status: Active
Current - On State (It (RMS)) (Max): 6 A
Voltage - Off State: 800 V
на замовлення 860 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 131.97 грн |
| 10+ | 113.98 грн |
| 100+ | 91.60 грн |
| 500+ | 70.63 грн |