Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (164817) > Сторінка 377 з 2747
| Фото | Назва | Виробник | Інформація |
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A6986TR | STMicroelectronics |
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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A6986TR | STMicroelectronics |
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BALF-NRG-01D3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGAPackaging: Tape & Reel (TR) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.1dB Return Loss (Min): -20dBm Phase Difference: 7° |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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BALF-NRG-01D3 | STMicroelectronics |
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGAPackaging: Cut Tape (CT) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.1dB Return Loss (Min): -20dBm Phase Difference: 7° |
на замовлення 34772 шт: термін постачання 21-31 дні (днів) |
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STPA003CD-48X | STMicroelectronics |
Description: IC AMP AB QUAD 85W 27FLEXIWATTFeatures: Mute, Short-Circuit and Thermal Protection, Standby Packaging: Tube Package / Case: 27-Flexiwatt, Formed Leads Output Type: 4-Channel (Quad) Mounting Type: Through Hole Type: Class AB Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 6V ~ 18V Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm Supplier Device Package: 27-Flexiwatt (Vertical) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ST25RU3980-BQFT | STMicroelectronics |
Description: IC RFID READER 860-960MHZ 48QFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 860MHz ~ 960MHz Interface: SPI Type: RFID Reader Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Standards: EPC, ISO 18000-6 Supplier Device Package: 48-QFN (7x7) Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LSM9DS1TR | STMicroelectronics |
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGAPackaging: Cut Tape (CT) Package / Case: 24-TFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis Supplier Device Package: 24-LGA (3x3.5) Part Status: Obsolete |
на замовлення 179 шт: термін постачання 21-31 дні (днів) |
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LSM9DS1TR | STMicroelectronics |
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGAPackaging: Tape & Reel (TR) Package / Case: 24-TFLGA Module Output Type: I2C, SPI Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis Supplier Device Package: 24-LGA (3x3.5) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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MP23AB02BTR | STMicroelectronics |
Description: MIC MEMS ANALOG OMNI -38DBPackaging: Tape & Reel (TR) Output Type: Analog Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm) Sensitivity: -38dB ±3dB @ 94dB SPL Shape: Rectangular Type: MEMS (Silicon) S/N Ratio: 64dB Termination: Solder Pads Direction: Omnidirectional Port Location: Bottom Height (Max): 0.043" (1.08mm) Part Status: Obsolete Voltage - Rated: 1.8 V Current - Supply: 220 µA Voltage Range: 1.6 V ~ 3.6 V Frequency Range: 20 Hz ~ 20 kHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F334C4T6 | STMicroelectronics |
Description: IC MCU 32BIT 16KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 16KB (16K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 15x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 1011 шт: термін постачання 21-31 дні (днів) |
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STM32F334C6T6 | STMicroelectronics |
Description: IC MCU 32BIT 32KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 32KB (32K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 15x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 1060 шт: термін постачання 21-31 дні (днів) |
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STM32F334C8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 64KB (64K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 15x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 48-LQFP (7x7) Part Status: Active Number of I/O: 37 DigiKey Programmable: Not Verified |
на замовлення 17446 шт: термін постачання 21-31 дні (днів) |
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STM32F334K4T6 | STMicroelectronics |
Description: IC MCU 32BIT 16KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 16KB (16K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F334K6T6 | STMicroelectronics |
Description: IC MCU 32BIT 32KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 32KB (32K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 1423 шт: термін постачання 21-31 дні (днів) |
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STM32F334K8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 32LQFPPackaging: Tray Package / Case: 32-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 64KB (64K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 9x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 32-LQFP (7x7) Part Status: Active Number of I/O: 25 DigiKey Programmable: Not Verified |
на замовлення 80 шт: термін постачання 21-31 дні (днів) |
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STM32F334R6T6 | STMicroelectronics |
Description: IC MCU 32BIT 32KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 32KB (32K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 21x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 51 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F334R8T6 | STMicroelectronics |
Description: IC MCU 32BIT 64KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 72MHz Program Memory Size: 64KB (64K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4 Data Converters: A/D 21x12b; D/A 3x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, POR, PWM, WDT Supplier Device Package: 64-LQFP (10x10) Part Status: Active Number of I/O: 51 DigiKey Programmable: Not Verified |
на замовлення 861 шт: термін постачання 21-31 дні (днів) |
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STM32091C-EVAL | STMicroelectronics |
Description: STM32 EVAL BRDPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Utilized IC / Part: STM32 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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PM8841D | STMicroelectronics |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 18V Input Type: Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 20ns, 20ns (Max) Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 800mA, 1A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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PM8841D | STMicroelectronics |
Description: IC GATE DRVR LOW-SIDE SOT23-5Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 18V Input Type: Non-Inverting Supplier Device Package: SOT-23-5 Rise / Fall Time (Typ): 20ns, 20ns (Max) Channel Type: Single Driven Configuration: Low-Side Number of Drivers: 1 Gate Type: N-Channel, P-Channel MOSFET Current - Peak Output (Source, Sink): 800mA, 1A Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 5349 шт: термін постачання 21-31 дні (днів) |
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STAC250V2-500E | STMicroelectronics |
Description: TRANS RF 500W 250V STAC177B Packaging: Tray Package / Case: STAC177B Frequency: 27MHz Configuration: N-Channel Power - Output: 3.5W Gain: 21.5dB Technology: MOSFET Supplier Device Package: STAC177B Voltage - Rated: 900 V Voltage - Test: 150 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SCT30N120 | STMicroelectronics |
Description: SICFET N-CH 1200V 40A HIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 200°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ) Supplier Device Package: HiP247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
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BAL-CC1101-01D3 | STMicroelectronics |
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGAPackaging: Cut Tape (CT) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 779MHz ~ 928MHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.9dB Return Loss (Min): -15dB Phase Difference: 10° Part Status: Not For New Designs |
на замовлення 6626 шт: термін постачання 21-31 дні (днів) |
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ECMF04-4HSWM10 | STMicroelectronics |
Description: CMC 100MA 4LN SMD ESDPackaging: Cut Tape (CT) Features: TVS Diode ESD Protection Package / Case: 10-UFDFN Filter Type: Signal Line Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm) Mounting Type: Surface Mount Number of Lines: 4 Operating Temperature: -40°C ~ 85°C Height (Max): 0.022" (0.55mm) Current Rating (Max): 100mA DC Resistance (DCR) (Max): 5Ohm (Typ) Part Status: Active |
на замовлення 3740 шт: термін постачання 21-31 дні (днів) |
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ESDALC5-1BT2Y | STMicroelectronics |
Description: TVS DIODE 5VWM 17.5VC SOD882TPackaging: Cut Tape (CT) Package / Case: SOD-882 Mounting Type: Surface Mount Type: Zener Operating Temperature: -50°C ~ 125°C (TJ) Capacitance @ Frequency: 26pF @ 1MHz Current - Peak Pulse (10/1000µs): 9A (8/20µs) Voltage - Reverse Standoff (Typ): 5V Supplier Device Package: SOD-882T Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 17.5V Power - Peak Pulse: 150W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 17202 шт: термін постачання 21-31 дні (днів) |
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ESDALC8-1BF4 | STMicroelectronics |
Description: TVS DIODE 6VWM 16VC 0201Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 30pF @ 1MHz Current - Peak Pulse (10/1000µs): 8.6A (8/20µs) Voltage - Reverse Standoff (Typ): 6V Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 7V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power - Peak Pulse: 165W Power Line Protection: No Part Status: Active |
на замовлення 7773 шт: термін постачання 21-31 дні (днів) |
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ESDAULC5-1BF4 | STMicroelectronics |
Description: TVS DIODE 3VWM 13.5VC 0201Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 10A (8/20µs) Voltage - Reverse Standoff (Typ): 3V Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 13.5V (Typ) Power - Peak Pulse: 140W Power Line Protection: No Part Status: Active |
на замовлення 26807 шт: термін постачання 21-31 дні (днів) |
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FERD20U50DJF-TR | STMicroelectronics |
Description: DIODE FERD 50V 20A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 50 V |
на замовлення 4126 шт: термін постачання 21-31 дні (днів) |
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FERD20U60DJF-TR | STMicroelectronics |
Description: DIODE FERD 60V 20A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: FERD (Field Effect Rectifier Diode) Current - Average Rectified (Io): 20A Supplier Device Package: PowerFlat™ (5x6) Operating Temperature - Junction: 150°C (Max) Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A Current - Reverse Leakage @ Vr: 800 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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LCP22-150B1RL | STMicroelectronics |
Description: IC TELECOM INTERFACE 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -55°C ~ 125°C Supplier Device Package: 8-SO Part Status: Active Number of Circuits: 1 |
на замовлення 415 шт: термін постачання 21-31 дні (днів) |
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LD39200DPUR | STMicroelectronics |
Description: IC REG LINEAR POS ADJ 2A 8-DFNPackaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 2A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 300 µA Voltage - Input (Max): 6V Number of Regulators: 1 Supplier Device Package: 8-DFN (4x4) Voltage - Output (Max): 5.75V Voltage - Output (Min/Fixed): 0.5V Control Features: Enable, Power Good Part Status: Active PSRR: 70dB ~ 40dB (1kHz ~ 1MHz) Voltage Dropout (Max): 0.25V @ 2A Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 3 mA |
на замовлення 19434 шт: термін постачання 21-31 дні (днів) |
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STB10N95K5 | STMicroelectronics |
Description: MOSFET N-CH 950V 8A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V |
на замовлення 908 шт: термін постачання 21-31 дні (днів) |
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STB28N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
на замовлення 1652 шт: термін постачання 21-31 дні (днів) |
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STB33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 26A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V |
на замовлення 372 шт: термін постачання 21-31 дні (днів) |
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STB40N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 34A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
на замовлення 2011 шт: термін постачання 21-31 дні (днів) |
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STB46N30M5 | STMicroelectronics |
Description: MOSFET N-CH 300V 53A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 377 шт: термін постачання 21-31 дні (днів) |
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STB6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD5N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 3.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD6N80K5 | STMicroelectronics |
Description: MOSFET N-CH 800V 4.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V |
на замовлення 5268 шт: термін постачання 21-31 дні (днів) |
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STGB10H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 20A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 107 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.5ns/103ns Switching Energy: 83µJ (on), 140µJ (off) Test Condition: 400V, 10A, 10Ohm, 15V Gate Charge: 57 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 115 W |
на замовлення 4249 шт: термін постачання 21-31 дні (днів) |
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STGB15H60DF | STMicroelectronics |
Description: IGBT TRENCH FS 600V 30A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24.5ns/118ns Switching Energy: 136µJ (on), 207µJ (off) Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 81 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 115 W |
на замовлення 159 шт: термін постачання 21-31 дні (днів) |
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STGB20V60F | STMicroelectronics |
Description: IGBT 600V 40A 167W D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 38ns/149ns Switching Energy: 200µJ (on), 130µJ (off) Test Condition: 400V, 20A, 15V Gate Charge: 116 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 167 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGB40V60F | STMicroelectronics |
Description: IGBT TRENCH FS 600V 80A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/208ns Switching Energy: 456µJ (on), 411µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 226 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 283 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STH150N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 110A H2PAK-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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STH80N10F7-2 | STMicroelectronics |
Description: MOSFET N-CH 100V 80A H2PAK-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL105NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 105A POWERFLAT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL13N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 7A POWERFLAT HVPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V |
на замовлення 861 шт: термін постачання 21-31 дні (днів) |
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STL160NS3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 160A POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V Power Dissipation (Max): 84W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: PowerFlat™ (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL20DN10F7 | STMicroelectronics |
Description: MOSFET 2N-CH 100V 20A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 62.5W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL220N3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 220A POWERFLAT56 |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STL33N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 22A PWRFLAT HVPackaging: Cut Tape (CT) Package / Case: 4-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL34N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 3.2A PWRFLAT88Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V Power Dissipation (Max): 2.8W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: PowerFlat™ (8x8) HV Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL3N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 4A POWERFLATPackaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V Power Dissipation (Max): 2.4W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (2x2) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V |
на замовлення 1922 шт: термін постачання 21-31 дні (днів) |
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STL4N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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STL4P2UH7 | STMicroelectronics |
Description: MOSFET P-CH 20V 4A PWRFLAT2X2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL7N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tj) Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V Power Dissipation (Max): 2.9W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V |
на замовлення 6551 шт: термін постачання 21-31 дні (днів) |
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STL8N10F7 | STMicroelectronics |
Description: MOSFET N-CH 100V POWERFLATPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 3.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V |
на замовлення 3450 шт: термін постачання 21-31 дні (днів) |
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STL9N60M2 | STMicroelectronics |
Description: MOSFET N-CH 600V 4.8A PWRFLAT56Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V |
на замовлення 1066 шт: термін постачання 21-31 дні (днів) |
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T2550-12G-TR | STMicroelectronics |
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Triac Type: Alternistor - Snubberless Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 50 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A Voltage - Gate Trigger (Vgt) (Max): 1.3 V Supplier Device Package: D2PAK Part Status: Active Current - On State (It (RMS)) (Max): 25 A Voltage - Off State: 1.2 kV |
на замовлення 30910 шт: термін постачання 21-31 дні (днів) |
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STL220N3LLH7 | STMicroelectronics |
Description: MOSFET N-CH 30V 220A POWERFLAT56 |
на замовлення 2960 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| A6986TR |
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Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
товару немає в наявності
В кошику
од. на суму грн.
| A6986TR |
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Виробник: STMicroelectronics
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
Description: IC REG BUCK ADJ 2A SYNC 16HTSSOP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BALF-NRG-01D3 |
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Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 12.81 грн |
| 10000+ | 11.92 грн |
| BALF-NRG-01D3 |
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Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.1dB
Return Loss (Min): -20dBm
Phase Difference: 7°
на замовлення 34772 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.33 грн |
| 10+ | 40.28 грн |
| 25+ | 26.95 грн |
| 50+ | 22.53 грн |
| 100+ | 20.64 грн |
| 250+ | 18.52 грн |
| 500+ | 17.83 грн |
| 1000+ | 12.90 грн |
| STPA003CD-48X |
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Виробник: STMicroelectronics
Description: IC AMP AB QUAD 85W 27FLEXIWATT
Features: Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
Description: IC AMP AB QUAD 85W 27FLEXIWATT
Features: Mute, Short-Circuit and Thermal Protection, Standby
Packaging: Tube
Package / Case: 27-Flexiwatt, Formed Leads
Output Type: 4-Channel (Quad)
Mounting Type: Through Hole
Type: Class AB
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 6V ~ 18V
Max Output Power x Channels @ Load: 85W x 4 @ 2Ohm
Supplier Device Package: 27-Flexiwatt (Vertical)
товару немає в наявності
В кошику
од. на суму грн.
| ST25RU3980-BQFT |
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Виробник: STMicroelectronics
Description: IC RFID READER 860-960MHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 860MHz ~ 960MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Standards: EPC, ISO 18000-6
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
Description: IC RFID READER 860-960MHZ 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 860MHz ~ 960MHz
Interface: SPI
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Standards: EPC, ISO 18000-6
Supplier Device Package: 48-QFN (7x7)
Part Status: Active
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| LSM9DS1TR |
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Виробник: STMicroelectronics
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Cut Tape (CT)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Cut Tape (CT)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
на замовлення 179 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2104.09 грн |
| LSM9DS1TR |
![]() |
Виробник: STMicroelectronics
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
Description: IMU ACCEL/GYRO/MAG I2C/SPI 24LGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Gyroscope, Magnetometer, Temperature, 9 Axis
Supplier Device Package: 24-LGA (3x3.5)
Part Status: Obsolete
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| MP23AB02BTR |
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Виробник: STMicroelectronics
Description: MIC MEMS ANALOG OMNI -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 220 µA
Voltage Range: 1.6 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
Description: MIC MEMS ANALOG OMNI -38DB
Packaging: Tape & Reel (TR)
Output Type: Analog
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Sensitivity: -38dB ±3dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 64dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.043" (1.08mm)
Part Status: Obsolete
Voltage - Rated: 1.8 V
Current - Supply: 220 µA
Voltage Range: 1.6 V ~ 3.6 V
Frequency Range: 20 Hz ~ 20 kHz
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| STM32F334C4T6 |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 415.84 грн |
| 10+ | 306.44 грн |
| 25+ | 283.10 грн |
| 100+ | 241.52 грн |
| 250+ | 230.01 грн |
| 500+ | 223.07 грн |
| STM32F334C6T6 |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 1060 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 440.74 грн |
| 10+ | 325.62 грн |
| 25+ | 300.94 грн |
| 100+ | 256.96 грн |
| 250+ | 244.82 грн |
| 500+ | 237.50 грн |
| 1000+ | 227.69 грн |
| STM32F334C8T6 |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 15x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Part Status: Active
Number of I/O: 37
DigiKey Programmable: Not Verified
на замовлення 17446 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 385.96 грн |
| 10+ | 285.42 грн |
| 25+ | 263.89 грн |
| 100+ | 225.43 грн |
| 250+ | 215.51 грн |
| STM32F334K4T6 |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 16KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
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| STM32F334K6T6 |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 1423 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 354.42 грн |
| 10+ | 261.76 грн |
| 25+ | 241.80 грн |
| 100+ | 206.31 грн |
| 250+ | 196.53 грн |
| STM32F334K8T6 |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 32LQFP
Packaging: Tray
Package / Case: 32-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 32-LQFP (7x7)
Part Status: Active
Number of I/O: 25
DigiKey Programmable: Not Verified
на замовлення 80 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 430.78 грн |
| 10+ | 318.11 грн |
| 25+ | 293.94 грн |
| STM32F334R6T6 |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
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| STM32F334R8T6 |
![]() |
Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 72MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 21x12b; D/A 3x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Part Status: Active
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 483.90 грн |
| 10+ | 358.87 грн |
| 25+ | 332.02 грн |
| 160+ | 276.79 грн |
| 320+ | 267.79 грн |
| 640+ | 260.38 грн |
| STM32091C-EVAL |
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Виробник: STMicroelectronics
Description: STM32 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Utilized IC / Part: STM32
Part Status: Obsolete
Description: STM32 EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Utilized IC / Part: STM32
Part Status: Obsolete
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| PM8841D |
![]() |
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 32.57 грн |
| PM8841D |
![]() |
Виробник: STMicroelectronics
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: SOT-23-5
Rise / Fall Time (Typ): 20ns, 20ns (Max)
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: N-Channel, P-Channel MOSFET
Current - Peak Output (Source, Sink): 800mA, 1A
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 5349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 76.36 грн |
| 10+ | 66.10 грн |
| 25+ | 62.73 грн |
| 100+ | 48.37 грн |
| 250+ | 45.21 грн |
| 500+ | 39.95 грн |
| 1000+ | 31.02 грн |
| STAC250V2-500E |
Виробник: STMicroelectronics
Description: TRANS RF 500W 250V STAC177B
Packaging: Tray
Package / Case: STAC177B
Frequency: 27MHz
Configuration: N-Channel
Power - Output: 3.5W
Gain: 21.5dB
Technology: MOSFET
Supplier Device Package: STAC177B
Voltage - Rated: 900 V
Voltage - Test: 150 V
Description: TRANS RF 500W 250V STAC177B
Packaging: Tray
Package / Case: STAC177B
Frequency: 27MHz
Configuration: N-Channel
Power - Output: 3.5W
Gain: 21.5dB
Technology: MOSFET
Supplier Device Package: STAC177B
Voltage - Rated: 900 V
Voltage - Test: 150 V
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| SCT30N120 |
![]() |
Виробник: STMicroelectronics
Description: SICFET N-CH 1200V 40A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
Description: SICFET N-CH 1200V 40A HIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 200°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 1mA (Typ)
Supplier Device Package: HiP247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 400 V
на замовлення 389 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1661.69 грн |
| 30+ | 1017.05 грн |
| 120+ | 959.20 грн |
| BAL-CC1101-01D3 |
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Виробник: STMicroelectronics
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
Description: BALUN 779MHZ-928MHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 779MHz ~ 928MHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.9dB
Return Loss (Min): -15dB
Phase Difference: 10°
Part Status: Not For New Designs
на замовлення 6626 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 22.41 грн |
| 17+ | 19.50 грн |
| 25+ | 18.80 грн |
| 50+ | 17.15 грн |
| 100+ | 16.65 грн |
| 250+ | 16.00 грн |
| 500+ | 15.28 грн |
| 1000+ | 14.82 грн |
| ECMF04-4HSWM10 |
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Виробник: STMicroelectronics
Description: CMC 100MA 4LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
Description: CMC 100MA 4LN SMD ESD
Packaging: Cut Tape (CT)
Features: TVS Diode ESD Protection
Package / Case: 10-UFDFN
Filter Type: Signal Line
Size / Dimension: 0.102" L x 0.053" W (2.60mm x 1.35mm)
Mounting Type: Surface Mount
Number of Lines: 4
Operating Temperature: -40°C ~ 85°C
Height (Max): 0.022" (0.55mm)
Current Rating (Max): 100mA
DC Resistance (DCR) (Max): 5Ohm (Typ)
Part Status: Active
на замовлення 3740 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 51.46 грн |
| 10+ | 41.16 грн |
| 25+ | 38.01 грн |
| 50+ | 33.65 грн |
| 100+ | 31.73 грн |
| 250+ | 29.35 грн |
| 500+ | 27.22 грн |
| 1000+ | 25.66 грн |
| ESDALC5-1BT2Y |
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Виробник: STMicroelectronics
Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 5VWM 17.5VC SOD882T
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -50°C ~ 125°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: SOD-882T
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 17.5V
Power - Peak Pulse: 150W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17202 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.62 грн |
| 46+ | 6.95 грн |
| 100+ | 4.94 грн |
| ESDALC8-1BF4 |
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Виробник: STMicroelectronics
Description: TVS DIODE 6VWM 16VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power - Peak Pulse: 165W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 6VWM 16VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power - Peak Pulse: 165W
Power Line Protection: No
Part Status: Active
на замовлення 7773 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 7.47 грн |
| 65+ | 4.96 грн |
| 131+ | 2.45 грн |
| 500+ | 2.17 грн |
| 1000+ | 1.79 грн |
| 2000+ | 1.76 грн |
| 5000+ | 1.70 грн |
| ESDAULC5-1BF4 |
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Виробник: STMicroelectronics
Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3VWM 13.5VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 13.5V (Typ)
Power - Peak Pulse: 140W
Power Line Protection: No
Part Status: Active
на замовлення 26807 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 14.94 грн |
| 32+ | 9.99 грн |
| 100+ | 3.93 грн |
| 500+ | 3.63 грн |
| 1000+ | 3.50 грн |
| 2000+ | 3.47 грн |
| 5000+ | 3.38 грн |
| FERD20U50DJF-TR |
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Виробник: STMicroelectronics
Description: DIODE FERD 50V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
Description: DIODE FERD 50V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 50 V
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.02 грн |
| 10+ | 61.38 грн |
| 100+ | 48.70 грн |
| 500+ | 35.86 грн |
| 1000+ | 32.69 грн |
| FERD20U60DJF-TR |
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Виробник: STMicroelectronics
Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
Description: DIODE FERD 60V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: FERD (Field Effect Rectifier Diode)
Current - Average Rectified (Io): 20A
Supplier Device Package: PowerFlat™ (5x6)
Operating Temperature - Junction: 150°C (Max)
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 20 A
Current - Reverse Leakage @ Vr: 800 µA @ 60 V
товару немає в наявності
В кошику
од. на суму грн.
| LCP22-150B1RL |
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Виробник: STMicroelectronics
Description: IC TELECOM INTERFACE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
Description: IC TELECOM INTERFACE 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -55°C ~ 125°C
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
на замовлення 415 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 223.27 грн |
| 10+ | 139.87 грн |
| 100+ | 96.93 грн |
| LD39200DPUR |
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Виробник: STMicroelectronics
Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
Description: IC REG LINEAR POS ADJ 2A 8-DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 8-DFN (4x4)
Voltage - Output (Max): 5.75V
Voltage - Output (Min/Fixed): 0.5V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 70dB ~ 40dB (1kHz ~ 1MHz)
Voltage Dropout (Max): 0.25V @ 2A
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 3 mA
на замовлення 19434 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 74.70 грн |
| 10+ | 51.79 грн |
| 25+ | 46.77 грн |
| 100+ | 38.71 грн |
| 250+ | 36.23 грн |
| 500+ | 34.74 грн |
| 1000+ | 32.96 грн |
| STB10N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
Description: MOSFET N-CH 950V 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 100 V
на замовлення 908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 302.96 грн |
| 10+ | 192.39 грн |
| 100+ | 135.71 грн |
| 500+ | 115.95 грн |
| STB28N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 600V 22A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 11A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
на замовлення 1652 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 195.05 грн |
| 10+ | 121.17 грн |
| 100+ | 83.24 грн |
| 500+ | 63.44 грн |
| STB33N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
Description: MOSFET N-CH 600V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 13A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 100 V
на замовлення 372 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 348.61 грн |
| 10+ | 222.20 грн |
| 100+ | 158.08 грн |
| STB40N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 88mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
на замовлення 2011 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 428.29 грн |
| 10+ | 276.47 грн |
| 100+ | 199.19 грн |
| 500+ | 184.56 грн |
| STB46N30M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 300V 53A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 100 V
Qualification: AEC-Q101
на замовлення 377 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 702.19 грн |
| 10+ | 464.70 грн |
| 100+ | 378.21 грн |
| STB6N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
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| STD5N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
Description: MOSFET N-CH 600V 3.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.7A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 100 V
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| STD6N80K5 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
Description: MOSFET N-CH 800V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 255 pF @ 100 V
на замовлення 5268 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 110.14 грн |
| 100+ | 75.36 грн |
| 500+ | 56.75 грн |
| 1000+ | 56.22 грн |
| STGB10H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 20A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 107 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.5ns/103ns
Switching Energy: 83µJ (on), 140µJ (off)
Test Condition: 400V, 10A, 10Ohm, 15V
Gate Charge: 57 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 115 W
на замовлення 4249 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 167.66 грн |
| 10+ | 103.75 грн |
| 100+ | 70.69 грн |
| 500+ | 53.06 грн |
| STGB15H60DF |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
Description: IGBT TRENCH FS 600V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24.5ns/118ns
Switching Energy: 136µJ (on), 207µJ (off)
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 81 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 115 W
на замовлення 159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 229.91 грн |
| 10+ | 143.95 грн |
| 100+ | 99.77 грн |
| STGB20V60F |
![]() |
Виробник: STMicroelectronics
Description: IGBT 600V 40A 167W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
Description: IGBT 600V 40A 167W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 38ns/149ns
Switching Energy: 200µJ (on), 130µJ (off)
Test Condition: 400V, 20A, 15V
Gate Charge: 116 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 167 W
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| STGB40V60F |
![]() |
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
Description: IGBT TRENCH FS 600V 80A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/208ns
Switching Energy: 456µJ (on), 411µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 226 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 283 W
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| STH150N10F7-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
Description: MOSFET N-CH 100V 110A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8115 pF @ 50 V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 292.17 грн |
| 10+ | 184.71 грн |
| 100+ | 130.01 грн |
| STH80N10F7-2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Description: MOSFET N-CH 100V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 40A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
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| STL105NS3LLH7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 105A POWERFLAT
Description: MOSFET N-CH 30V 105A POWERFLAT
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| STL13N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
Description: MOSFET N-CH 600V 7A POWERFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 4.5A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 100 V
на замовлення 861 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 151.89 грн |
| 10+ | 93.36 грн |
| 100+ | 63.25 грн |
| 500+ | 47.26 грн |
| STL160NS3LLH7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 18A, 10V
Power Dissipation (Max): 84W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: PowerFlat™ (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 25 V
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| STL20DN10F7 |
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Description: MOSFET 2N-CH 100V 20A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
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| STL220N3LLH7 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 220A POWERFLAT56
Description: MOSFET N-CH 30V 220A POWERFLAT56
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STL33N60M2 |
![]() |
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
Description: MOSFET N-CH 600V 22A PWRFLAT HV
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 10.75A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL34N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
Description: MOSFET N-CH 650V 3.2A PWRFLAT88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 2.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerFlat™ (8x8) HV
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 62.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| STL3N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
Description: MOSFET N-CH 100V 4A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 10V
Power Dissipation (Max): 2.4W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (2x2)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 408 pF @ 25 V
на замовлення 1922 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.78 грн |
| 10+ | 46.28 грн |
| 100+ | 32.03 грн |
| 500+ | 25.11 грн |
| 1000+ | 21.37 грн |
| STL4N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
Description: MOSFET N-CH 100V 4.5/18A PWRFLAT
на замовлення 5 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| STL4P2UH7 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 20V 4A PWRFLAT2X2
Description: MOSFET P-CH 20V 4A PWRFLAT2X2
товару немає в наявності
В кошику
од. на суму грн.
| STL7N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tj)
Rds On (Max) @ Id, Vgs: 35mOhm @ 3.5A, 10V
Power Dissipation (Max): 2.9W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 920 pF @ 50 V
на замовлення 6551 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.02 грн |
| 10+ | 61.46 грн |
| 100+ | 47.80 грн |
| 500+ | 38.03 грн |
| 1000+ | 30.98 грн |
| STL8N10F7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
Description: MOSFET N-CH 100V POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 50 V
на замовлення 3450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 117.86 грн |
| 10+ | 71.69 грн |
| 100+ | 50.45 грн |
| 500+ | 42.23 грн |
| 1000+ | 37.81 грн |
| STL9N60M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
Description: MOSFET N-CH 600V 4.8A PWRFLAT56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 860mOhm @ 2.4A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 320 pF @ 100 V
на замовлення 1066 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 166.00 грн |
| 10+ | 102.55 грн |
| 100+ | 69.84 грн |
| 500+ | 52.41 грн |
| 1000+ | 51.03 грн |
| T2550-12G-TR |
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Виробник: STMicroelectronics
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
Description: TRIAC ALTERNSTR 1.2KV 25A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Triac Type: Alternistor - Snubberless
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 50 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 240A, 252A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: D2PAK
Part Status: Active
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 1.2 kV
на замовлення 30910 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 329.52 грн |
| 10+ | 209.97 грн |
| 100+ | 148.83 грн |
| 500+ | 129.75 грн |
| STL220N3LLH7 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 220A POWERFLAT56
Description: MOSFET N-CH 30V 220A POWERFLAT56
на замовлення 2960 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.



























