Продукція > STMICROELECTRONICS > Всі товари виробника STMICROELECTRONICS (170426) > Сторінка 421 з 2841
Фото | Назва | Виробник | Інформація |
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STM32F051T8Y6TR | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 36-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b; D/A 1x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 36-WLCSP Part Status: Active Number of I/O: 29 DigiKey Programmable: Not Verified |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
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STM32F031E6Y6TR | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 25-UFBGA, WLCSP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V Connectivity: I2C, IrDA, LINbus, SPI, UART/USART Peripherals: DMA, I2S, POR, PWM, WDT Supplier Device Package: 25-WLCSP Part Status: Active Number of I/O: 20 DigiKey Programmable: Not Verified |
на замовлення 3501 шт: термін постачання 21-31 дні (днів) |
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STPTIC-27G2C5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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STPTIC-33G2C5 | STMicroelectronics |
Description: IC TUNABLE CAP RF BST 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 3GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-39G2C5 | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-47G2C5 | STMicroelectronics |
Description: IC TUNABLE CAP RF BST 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-56G2C5 | STMicroelectronics |
Description: IC TUNABLE CAP RF BST 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-68G2C5 | STMicroelectronics |
Description: IC TUNABLE CAP RF BST 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-82G2C5 | STMicroelectronics |
Description: IC TUNABLE CAP RF BST 4WLCSP Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24C32M-FCU6T/TF | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24C32M-FCU6T/TF | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, WLCSP Mounting Type: Surface Mount Memory Size: 32Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 4K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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M24C64M-FCU6T/TF | STMicroelectronics |
Description: IC EEPROM 64KBIT 1MHZ 4WLCSP Packaging: Cut Tape (CT) Package / Case: 4-XFBGA Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 5.5V Technology: EEPROM Clock Frequency: 1 MHz Memory Format: EEPROM Supplier Device Package: 4-WLCSP Part Status: Obsolete Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 450 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STM32F407G-DISC1 | STMicroelectronics |
![]() Packaging: Bulk Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: STM32F407, STM32F417 Platform: Discovery Part Status: Active |
на замовлення 1256 шт: термін постачання 21-31 дні (днів) |
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BALF-CC25-02D3 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.6dB Phase Difference: 7° |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BALF-CC25-02D3 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-WFBGA, FCBGA Mounting Type: Surface Mount Frequency Range: 2.4GHz ~ 2.5GHz Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 1.6dB Phase Difference: 7° |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EMIF06-USD14F3 | STMicroelectronics |
Description: FILTER RC(PI) 40 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 15-UFBGA, FCBGA Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -30°C ~ 85°C Values: R = 40Ohms, C = 7.5pF Height: 0.217" (5.50mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 40 ESD Protection: Yes Part Status: Obsolete Number of Channels: 6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STAC1011-350 | STMicroelectronics |
Description: RF MOSFET LDMOS 36V STAC265B Packaging: Tube Package / Case: STAC265B Frequency: 1.03GHz ~ 1.09GHz Power - Output: 350W Gain: 15dB Technology: LDMOS Supplier Device Package: STAC265B Part Status: Obsolete Voltage - Rated: 80 V Voltage - Test: 36 V Current - Test: 150 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB23N80K5 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V |
на замовлення 898 шт: термін постачання 21-31 дні (днів) |
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STB23N80K5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STB43N65M5 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 1749 шт: термін постачання 21-31 дні (днів) |
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STB43N65M5 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STF23N80K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V |
на замовлення 921 шт: термін постачання 21-31 дні (днів) |
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STFU28N65M2 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STGIPQ3H60T-HL | STMicroelectronics |
![]() Packaging: Tube Package / Case: 26-DIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 18V Applications: Appliance Technology: IGBT Voltage - Load: 500V (Max) Supplier Device Package: 26-N2DIP Motor Type - AC, DC: AC, Synchronous |
на замовлення 352 шт: термін постачання 21-31 дні (днів) |
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STGIPQ3H60T-HZ | STMicroelectronics |
![]() Packaging: Tube Package / Case: 26-DIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 18V Applications: Appliance Technology: IGBT Voltage - Load: 500V (Max) Supplier Device Package: 26-N2DIP Motor Type - AC, DC: AC, Synchronous |
на замовлення 616 шт: термін постачання 21-31 дні (днів) |
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STGIPQ5C60T-HZ | STMicroelectronics |
![]() Packaging: Tube Package / Case: 26-DIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 18V Applications: Appliance Technology: IGBT Voltage - Load: 500V (Max) Supplier Device Package: 26-N2DIP Motor Type - AC, DC: AC, Synchronous |
на замовлення 327 шт: термін постачання 21-31 дні (днів) |
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STHVDAC-253MTGF3 | STMicroelectronics |
Description: IC DAC 7BIT 16FLIPCHIP Packaging: Tape & Reel (TR) Package / Case: 16-UFBGA, FCBGA Mounting Type: Surface Mount Type: DAC Data Interface: SPI Operating Temperature: -30°C ~ 85°C Voltage - Supply: 2.3V ~ 5V Resolution (Bits): 7 b Voltage Supply Source: Analog and Digital Supplier Device Package: 16-FlipChip (1.7x1.7) Part Status: Obsolete Number of Channels: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STL135N8F7AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V Power Dissipation (Max): 4.8W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4674 шт: термін постачання 21-31 дні (днів) |
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STL135N8F7AG | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V Power Dissipation (Max): 4.8W (Ta), 135W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: PowerFlat™ (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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STP23N80K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V |
на замовлення 1101 шт: термін постачання 21-31 дні (днів) |
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STPSC10H065GY-TR | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1263 шт: термін постачання 21-31 дні (днів) |
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STPSC10H065GY-TR | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 480pF @ 0V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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STPTIC-15G2C5 | STMicroelectronics |
Description: 1P5 TUNABLE CAPACITOR Packaging: Cut Tape (CT) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-15G2C5 | STMicroelectronics |
Description: 1P5 TUNABLE CAPACITOR Packaging: Tape & Reel (TR) Package / Case: 4-XFBGA, FCBGA Mounting Type: Surface Mount Function: Analog Tunable Capacitor Frequency: 700MHz ~ 2.7GHz RF Type: GSM, LTE, W-CDMA Supplier Device Package: 4-WLCSP Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPTIC-39G2C5 | STMicroelectronics |
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на замовлення 2654 шт: термін постачання 21-31 дні (днів) |
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STTH30ACS06W | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Technology: Standard Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STW23N80K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V |
на замовлення 570 шт: термін постачання 21-31 дні (днів) |
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STW65N80K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V Power Dissipation (Max): 446W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V |
на замовлення 146 шт: термін постачання 21-31 дні (днів) |
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STW88N65M5-4 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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STWA40N95K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V Power Dissipation (Max): 450W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-247 Long Leads Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ESDAVLC5-1BF4 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.7A (8/20µA) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 19.2V (Typ) Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active |
на замовлення 133641 шт: термін постачання 21-31 дні (днів) |
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SM30T42AY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 48.4A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM30T42CAY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 48.4A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5686 шт: термін постачання 21-31 дні (днів) |
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SM30T47AY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2593 шт: термін постачання 21-31 дні (днів) |
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SM30T47CAY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 43.5A Voltage - Reverse Standoff (Typ): 40V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 44.4V Voltage - Clamping (Max) @ Ipp: 64.5V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2086 шт: термін постачання 21-31 дні (днів) |
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SM30T56AY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 76.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2294 шт: термін постачання 21-31 дні (днів) |
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SM30T56CAY | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 38A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 53.2V Voltage - Clamping (Max) @ Ipp: 76.6V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3553 шт: термін постачання 21-31 дні (днів) |
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STD10P10F6 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V |
на замовлення 1432 шт: термін постачання 21-31 дні (днів) |
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STD28P3LLH6AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD30N6LF6AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1386 шт: термін постачання 21-31 дні (днів) |
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STD47N10F7AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STD64N4F6AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5825 шт: термін постачання 21-31 дні (днів) |
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STH140N6F7-2 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: H2Pak-2 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STH145N8F7-2AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: H2Pak-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 488 шт: термін постачання 21-31 дні (днів) |
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STH6N95K5-2 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V |
на замовлення 3060 шт: термін постачання 21-31 дні (днів) |
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STPS4S200S | STMicroelectronics |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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STPS5L60U | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 5A Supplier Device Package: SMB Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A Current - Reverse Leakage @ Vr: 220 µA @ 60 V |
на замовлення 5068 шт: термін постачання 21-31 дні (днів) |
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ESDAVLC5-1BF4 | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 7pF @ 1MHz Current - Peak Pulse (10/1000µs): 1.7A (8/20µA) Voltage - Reverse Standoff (Typ): 5.3V (Max) Supplier Device Package: 0201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Voltage - Clamping (Max) @ Ipp: 19.2V (Typ) Power - Peak Pulse: 20W Power Line Protection: No Part Status: Active |
на замовлення 120000 шт: термін постачання 21-31 дні (днів) |
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SM30T42AY | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 48.4A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMC Unidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SM30T42CAY | STMicroelectronics |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 48.4A Voltage - Reverse Standoff (Typ): 36V Supplier Device Package: SMC Bidirectional Channels: 1 Voltage - Breakdown (Min): 40V Voltage - Clamping (Max) @ Ipp: 58.1V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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STM32F051T8Y6TR |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 36WLCSP
Packaging: Cut Tape (CT)
Package / Case: 36-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: HDMI-CEC, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 36-WLCSP
Part Status: Active
Number of I/O: 29
DigiKey Programmable: Not Verified
на замовлення 68 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 260.00 грн |
10+ | 188.75 грн |
25+ | 173.32 грн |
STM32F031E6Y6TR |
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Виробник: STMicroelectronics
Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 25WLCSP
Packaging: Cut Tape (CT)
Package / Case: 25-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 25-WLCSP
Part Status: Active
Number of I/O: 20
DigiKey Programmable: Not Verified
на замовлення 3501 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 183.53 грн |
10+ | 131.54 грн |
25+ | 120.24 грн |
100+ | 101.20 грн |
250+ | 95.65 грн |
500+ | 92.31 грн |
1000+ | 88.08 грн |
2500+ | 85.22 грн |
STPTIC-27G2C5 |
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Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-33G2C5 |
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 3GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-39G2C5 |
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Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-47G2C5 |
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-56G2C5 |
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-68G2C5 |
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
товару немає в наявності
В кошику
од. на суму грн.
STPTIC-82G2C5 |
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
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M24C32M-FCU6T/TF |
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Виробник: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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M24C32M-FCU6T/TF |
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Виробник: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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M24C64M-FCU6T/TF |
Виробник: STMicroelectronics
Description: IC EEPROM 64KBIT 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC EEPROM 64KBIT 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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STM32F407G-DISC1 |
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Виробник: STMicroelectronics
Description: DISCOVERY STM32F407/STM32F417
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407, STM32F417
Platform: Discovery
Part Status: Active
Description: DISCOVERY STM32F407/STM32F417
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F407, STM32F417
Platform: Discovery
Part Status: Active
на замовлення 1256 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1479.51 грн |
BALF-CC25-02D3 |
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Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Cut Tape (CT)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
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BALF-CC25-02D3 |
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Виробник: STMicroelectronics
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
Description: BALUN 2.4GHZ-2.5GHZ 50/50 4WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-WFBGA, FCBGA
Mounting Type: Surface Mount
Frequency Range: 2.4GHz ~ 2.5GHz
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 1.6dB
Phase Difference: 7°
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EMIF06-USD14F3 |
Виробник: STMicroelectronics
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF
Height: 0.217" (5.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
Description: FILTER RC(PI) 40 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 15-UFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.54mm x 1.54mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -30°C ~ 85°C
Values: R = 40Ohms, C = 7.5pF
Height: 0.217" (5.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Part Status: Obsolete
Number of Channels: 6
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STAC1011-350 |
Виробник: STMicroelectronics
Description: RF MOSFET LDMOS 36V STAC265B
Packaging: Tube
Package / Case: STAC265B
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 350W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 36 V
Current - Test: 150 mA
Description: RF MOSFET LDMOS 36V STAC265B
Packaging: Tube
Package / Case: STAC265B
Frequency: 1.03GHz ~ 1.09GHz
Power - Output: 350W
Gain: 15dB
Technology: LDMOS
Supplier Device Package: STAC265B
Part Status: Obsolete
Voltage - Rated: 80 V
Voltage - Test: 36 V
Current - Test: 150 mA
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STB23N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
на замовлення 898 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 371.09 грн |
10+ | 255.95 грн |
100+ | 190.34 грн |
500+ | 159.53 грн |
STB23N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Description: MOSFET N-CH 800V 16A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
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STB43N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1749 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 638.33 грн |
10+ | 446.25 грн |
100+ | 394.34 грн |
STB43N65M5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 21A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 334.57 грн |
STF23N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Description: MOSFET N-CH 800V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
на замовлення 921 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 368.67 грн |
50+ | 179.76 грн |
100+ | 174.30 грн |
500+ | 160.07 грн |
STFU28N65M2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 650V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
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STGIPQ3H60T-HL |
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Виробник: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
на замовлення 352 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 754.24 грн |
10+ | 499.43 грн |
STGIPQ3H60T-HZ |
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Виробник: STMicroelectronics
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
Description: IC MOTOR DRVR 13.5V-18V 26N2DIP
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
на замовлення 616 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 744.59 грн |
10+ | 614.69 грн |
360+ | 482.09 грн |
STGIPQ5C60T-HZ |
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Виробник: STMicroelectronics
Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
Description: SLLIMM NANO 2ND SERIES IPM, 3-PH
Packaging: Tube
Package / Case: 26-DIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18V
Applications: Appliance
Technology: IGBT
Voltage - Load: 500V (Max)
Supplier Device Package: 26-N2DIP
Motor Type - AC, DC: AC, Synchronous
на замовлення 327 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 773.56 грн |
15+ | 483.95 грн |
105+ | 379.59 грн |
STHVDAC-253MTGF3 |
Виробник: STMicroelectronics
Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
Description: IC DAC 7BIT 16FLIPCHIP
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, FCBGA
Mounting Type: Surface Mount
Type: DAC
Data Interface: SPI
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5V
Resolution (Bits): 7 b
Voltage Supply Source: Analog and Digital
Supplier Device Package: 16-FlipChip (1.7x1.7)
Part Status: Obsolete
Number of Channels: 3
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STL135N8F7AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4674 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 247.12 грн |
10+ | 158.52 грн |
100+ | 111.61 грн |
500+ | 91.50 грн |
STL135N8F7AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 130A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 13A, 10V
Power Dissipation (Max): 4.8W (Ta), 135W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 82.72 грн |
STP23N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Description: MOSFET N-CH 800V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
на замовлення 1101 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 400.87 грн |
50+ | 210.03 грн |
100+ | 203.48 грн |
500+ | 170.26 грн |
1000+ | 165.89 грн |
STPSC10H065GY-TR |
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Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1263 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 309.10 грн |
10+ | 209.75 грн |
100+ | 164.25 грн |
500+ | 128.10 грн |
STPSC10H065GY-TR |
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Виробник: STMicroelectronics
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SIL CARBIDE 650V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 135.14 грн |
STPTIC-15G2C5 |
Виробник: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Description: 1P5 TUNABLE CAPACITOR
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
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STPTIC-15G2C5 |
Виробник: STMicroelectronics
Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
Description: 1P5 TUNABLE CAPACITOR
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-WLCSP
Part Status: Obsolete
товару немає в наявності
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од. на суму грн.
STPTIC-39G2C5 |
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Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF BST 4WLCSP
Description: IC TUNABLE CAP RF BST 4WLCSP
на замовлення 2654 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.62 грн |
10+ | 85.81 грн |
25+ | 77.48 грн |
100+ | 63.62 грн |
250+ | 55.83 грн |
500+ | 49.34 грн |
1000+ | 38.32 грн |
STTH30ACS06W |
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Виробник: STMicroelectronics
Description: DIODE STANDARD 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE STANDARD 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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STW23N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
Description: MOSFET N-CH 800V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 100 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 320.37 грн |
30+ | 207.97 грн |
STW65N80K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
Description: MOSFET N-CH 800V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 23A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 100 V
на замовлення 146 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 856.47 грн |
30+ | 629.39 грн |
STW88N65M5-4 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
Description: MOSFET N-CH 650V 84A TO247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 42A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 204 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8825 pF @ 100 V
на замовлення 33 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 916.85 грн |
30+ | 686.47 грн |
STWA40N95K5 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
Description: MOSFET N-CH 950V 38A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 19A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-247 Long Leads
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 100 V
товару немає в наявності
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од. на суму грн.
ESDAVLC5-1BF4 |
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Виробник: STMicroelectronics
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 133641 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
37+ | 8.85 грн |
50+ | 6.28 грн |
121+ | 2.58 грн |
500+ | 2.10 грн |
1000+ | 1.85 грн |
2000+ | 1.82 грн |
5000+ | 1.69 грн |
SM30T42AY |
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Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SM30T42CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5686 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 116.72 грн |
10+ | 81.31 грн |
100+ | 57.20 грн |
500+ | 43.62 грн |
1000+ | 40.36 грн |
SM30T47AY |
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Виробник: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2593 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.62 грн |
10+ | 79.14 грн |
100+ | 61.58 грн |
500+ | 48.98 грн |
1000+ | 39.90 грн |
SM30T47CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2086 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 49.91 грн |
10+ | 42.32 грн |
100+ | 39.33 грн |
SM30T56AY |
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Виробник: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 76.6VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2294 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 99.81 грн |
10+ | 78.91 грн |
100+ | 61.35 грн |
500+ | 48.80 грн |
1000+ | 39.75 грн |
SM30T56CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3553 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 103.84 грн |
10+ | 78.68 грн |
100+ | 55.34 грн |
500+ | 42.20 грн |
1000+ | 39.05 грн |
STD10P10F6 |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
Description: MOSFET P-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 864 pF @ 80 V
на замовлення 1432 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.28 грн |
10+ | 56.12 грн |
100+ | 37.77 грн |
500+ | 27.65 грн |
1000+ | 25.14 грн |
STD28P3LLH6AG |
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Виробник: STMicroelectronics
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 25 V
Qualification: AEC-Q101
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STD30N6LF6AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 24A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 12A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1386 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 119.94 грн |
10+ | 72.94 грн |
100+ | 48.65 грн |
500+ | 35.90 грн |
1000+ | 32.76 грн |
STD47N10F7AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 45A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 22.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 50 V
Qualification: AEC-Q101
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од. на суму грн.
STD64N4F6AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 54A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 8.2mOhm @ 27A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2415 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5825 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 80.50 грн |
10+ | 67.67 грн |
100+ | 44.71 грн |
500+ | 35.28 грн |
1000+ | 32.69 грн |
STH140N6F7-2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 60V 80A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 40A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: H2Pak-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
STH145N8F7-2AG |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 45A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6340 pF @ 40 V
Qualification: AEC-Q101
на замовлення 488 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 282.54 грн |
10+ | 178.44 грн |
100+ | 125.41 грн |
STH6N95K5-2 |
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Виробник: STMicroelectronics
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
Description: MOSFET N-CH 950V 6A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 3A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 100 V
на замовлення 3060 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 223.78 грн |
10+ | 165.49 грн |
100+ | 117.67 грн |
500+ | 96.58 грн |
STPS4S200S |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 200V 4A SMC
Description: DIODE SCHOTTKY 200V 4A SMC
товару немає в наявності
В кошику
од. на суму грн.
STPS5L60U |
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Виробник: STMicroelectronics
Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Description: DIODE SCHOTTKY 60V 5A SMB
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: SMB
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 5 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
на замовлення 5068 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 63.59 грн |
10+ | 38.83 грн |
100+ | 26.71 грн |
500+ | 19.26 грн |
1000+ | 17.38 грн |
ESDAVLC5-1BF4 |
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Виробник: STMicroelectronics
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.3VWM 19.2VC 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.7A (8/20µA)
Voltage - Reverse Standoff (Typ): 5.3V (Max)
Supplier Device Package: 0201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 19.2V (Typ)
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
на замовлення 120000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15000+ | 1.68 грн |
30000+ | 1.47 грн |
45000+ | 1.39 грн |
75000+ | 1.22 грн |
105000+ | 1.17 грн |
SM30T42AY |
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Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
SM30T42CAY |
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Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 48.4A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 43.74 грн |