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STD19N3LLH6AG STD19N3LLH6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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STD85N10F7AG STD85N10F7AG STMicroelectronics en.DM00136911.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
2500+50.03 грн
Мінімальне замовлення: 2500
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STGB30H60DFB STGB30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
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STHVDAC-256MTGF3 STHVDAC-256MTGF3 STMicroelectronics en.DM00229754.pdf Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
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STPTIC-27L2C5 STPTIC-27L2C5 STMicroelectronics Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
товару немає в наявності
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Z0402MF0AA2 Z0402MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405NF0AA2 Z0405NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0409NF0AA2 Z0409NF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0410MF0AA2 Z0410MF0AA2 STMicroelectronics z04.pdf Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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Z0405MF0AA2 Z0405MF0AA2 STMicroelectronics z04.pdf Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
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STGF15M65DF2 STGF15M65DF2 STMicroelectronics en.DM00237960.pdf Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)
3+149.79 грн
50+69.77 грн
100+62.51 грн
500+46.71 грн
1000+42.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF5H60DF STGF5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
товару немає в наявності
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STGP15M65DF2 STGP15M65DF2 STMicroelectronics en.DM00237971.pdf Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
товару немає в наявності
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STGP30H60DFB STGP30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 867 шт:
термін постачання 21-31 дні (днів)
2+203.00 грн
50+96.62 грн
100+87.04 грн
500+65.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP5H60DF STGP5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
3+137.51 грн
50+63.58 грн
100+56.88 грн
500+42.35 грн
1000+38.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGW30M65DF2 STGW30M65DF2 STMicroelectronics en.DM00177695.pdf Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
2+319.23 грн
30+169.34 грн
120+138.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP110N8F7 STP110N8F7 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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STP27N60M2-EP STP27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
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STW27N60M2-EP STW27N60M2-EP STMicroelectronics en.DM00251846.pdf Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
2+295.49 грн
30+156.99 грн
120+128.83 грн
510+101.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF7LN80K5 STF7LN80K5 STMicroelectronics en.DM00256224.pdf Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3128 шт:
термін постачання 21-31 дні (днів)
2+189.90 грн
50+92.69 грн
100+88.99 грн
500+69.76 грн
1000+64.39 грн
2000+59.88 грн
Мінімальне замовлення: 2
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STF9N80K5 STF9N80K5 STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STFI7LN80K5 STFI7LN80K5 STMicroelectronics en.DM00256619.pdf Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STFI9N80K5 STFI9N80K5 STMicroelectronics STF%28I%299N80K5.pdf Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STP7LN80K5 STP7LN80K5 STMicroelectronics en.DM00260911.pdf Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
2+198.90 грн
50+98.64 грн
100+93.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STU7LN80K5 STU7LN80K5 STMicroelectronics en.DM00261198.pdf Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+213.64 грн
75+95.73 грн
150+86.58 грн
525+69.05 грн
1050+63.77 грн
2025+59.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10LN80K5 STF10LN80K5 STMicroelectronics en.DM00176897.pdf Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
2+246.38 грн
50+120.96 грн
100+115.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP10LN80K5 STP10LN80K5 STMicroelectronics en.DM00176858.pdf Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STGIF7CH60TS-L STGIF7CH60TS-L STMicroelectronics en.DM00122690.pdf Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
1+793.98 грн
13+482.45 грн
104+386.73 грн
В кошику  од. на суму  грн.
STWA48N60M2 STWA48N60M2 STMicroelectronics en.DM00250450.pdf Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STF26N60M2 STF26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
2+242.29 грн
50+117.51 грн
100+106.22 грн
500+81.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI26N60M2 STFI26N60M2 STMicroelectronics en.DM00166992.pdf Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STIEC45-24ACS STIEC45-24ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
4+81.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STIEC45-26ACS STIEC45-26ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
STIEC45-28ACS STIEC45-28ACS STMicroelectronics en.CD00258714.pdf Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
STD46N6F7 STD46N6F7 STMicroelectronics en.DM00227324.pdf Description: MOSFET N-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
товару немає в наявності
В кошику  од. на суму  грн.
STGB5H60DF STGB5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
товару немає в наявності
В кошику  од. на суму  грн.
STGD5H60DF STGD5H60DF STMicroelectronics en.DM00149621.pdf Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
на замовлення 3906 шт:
термін постачання 21-31 дні (днів)
4+99.86 грн
10+60.61 грн
100+40.17 грн
500+29.49 грн
1000+26.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STL50DN6F7 STL50DN6F7 STMicroelectronics en.DM00216100.pdf Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
на замовлення 6104 шт:
термін постачання 21-31 дні (днів)
3+130.15 грн
10+93.25 грн
100+63.65 грн
500+47.56 грн
1000+45.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD7LN80K5 STD7LN80K5 STMicroelectronics en.DM00256349.pdf Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 2443 шт:
термін постачання 21-31 дні (днів)
3+155.52 грн
10+119.10 грн
100+81.88 грн
500+62.47 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL7LN80K5 STL7LN80K5 STMicroelectronics en.DM00261218.pdf Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
STL11N6F7 STL11N6F7 STMicroelectronics en.DM00216237.pdf Description: MOSFET N-CH 60V 11A POWERFLAT
товару немає в наявності
В кошику  од. на суму  грн.
STL100N8F7 STL100N8F7 STMicroelectronics en.DM00140134.pdf Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
STL8DN6LF6AG STL8DN6LF6AG STMicroelectronics en.DM00208902.pdf Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17932 шт:
термін постачання 21-31 дні (днів)
3+117.87 грн
10+76.38 грн
100+54.66 грн
500+42.98 грн
1000+39.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL8N6LF6AG STL8N6LF6AG STMicroelectronics en.DM00213144.pdf Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4070 шт:
термін постачання 21-31 дні (днів)
3+144.88 грн
10+88.99 грн
100+60.00 грн
500+44.64 грн
1000+40.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB80N4F6AG STB80N4F6AG STMicroelectronics en.DM00206725.pdf Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
3+154.70 грн
10+104.83 грн
100+74.33 грн
500+56.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGB15M65DF2 STGB15M65DF2 STMicroelectronics en.DM00096991.pdf Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 2516 шт:
термін постачання 21-31 дні (днів)
2+172.71 грн
10+107.20 грн
100+73.21 грн
500+55.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGB30H60DLFB STGB30H60DLFB STMicroelectronics Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STH290N4F6-2AG STH290N4F6-2AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-2
товару немає в наявності
В кошику  од. на суму  грн.
STH290N4F6-6AG STH290N4F6-6AG STMicroelectronics en.DM00206158.pdf Description: MOSFET N-CH 40V 180A H2PAK-6
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STD19N3LLH6AG STD19N3LLH6AG STMicroelectronics en.DM00064632.pdf Description: MOSFET N-CH 30V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STD85N10F7AG STD85N10F7AG STMicroelectronics en.DM00136911.pdf Description: MOSFET N-CH 100V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 19956 шт:
термін постачання 21-31 дні (днів)
3+153.07 грн
10+102.78 грн
100+74.30 грн
500+55.93 грн
1000+55.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGB30H60DFB STGB30H60DFB STMicroelectronics en.DM00125119.pdf Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STL7N60M2 STL7N60M2 STMicroelectronics en.DM00157582.pdf Description: MOSFET N-CH 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 10V
Power Dissipation (Max): 4W (Ta), 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
на замовлення 2272 шт:
термін постачання 21-31 дні (днів)
3+117.87 грн
10+72.28 грн
100+48.36 грн
500+35.76 грн
1000+32.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STHVDAC-256MTGF3 STHVDAC-256MTGF3 STMicroelectronics en.DM00229754.pdf Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
В кошику  од. на суму  грн.
STM32F769NIH6 STM32F769NIH6 STMicroelectronics en.DM00273119.pdf Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Part Status: Active
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
1+1650.98 грн
10+1275.50 грн
25+1196.96 грн
160+1021.21 грн
320+994.83 грн
640+973.12 грн
В кошику  од. на суму  грн.
STM32F767ZIT6 STM32F767ZIT6 STMicroelectronics en.DM00273119.pdf Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 1548 шт:
термін постачання 21-31 дні (днів)
1+1506.92 грн
10+1160.81 грн
60+1034.23 грн
120+938.45 грн
300+904.54 грн
540+886.94 грн
В кошику  од. на суму  грн.
STM32F769I-EVAL STM32F769I-EVAL STMicroelectronics en.DM00276583.pdf Description: STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+26121.89 грн
В кошику  од. на суму  грн.
STM32F769I-DISCO STM32F769I-DISCO STMicroelectronics en.DM00276576.pdf Description: DISCOVERY STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Platform: Discovery
Part Status: Active
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
1+6249.51 грн
В кошику  од. на суму  грн.
LSM303AGRTR LSM303AGRTR STMicroelectronics en.DM00177685.pdf Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
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ST3485EIYDT ST3485EIYDT STMicroelectronics en.CD00003137.pdf Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
2500+110.00 грн
5000+103.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STD19N3LLH6AG en.DM00064632.pdf
STD19N3LLH6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STD85N10F7AG en.DM00136911.pdf
STD85N10F7AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 17500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+50.03 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
STGB30H60DFB en.DM00125119.pdf
STGB30H60DFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STHVDAC-256MTGF3 en.DM00229754.pdf
STHVDAC-256MTGF3
Виробник: STMicroelectronics
Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
В кошику  од. на суму  грн.
STPTIC-27L2C5
STPTIC-27L2C5
Виробник: STMicroelectronics
Description: IC TUNABLE CAP RF 700-2700MHZ
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Function: Analog Tunable Capacitor
Frequency: 700MHz ~ 2.7GHz
RF Type: GSM, LTE, W-CDMA
Supplier Device Package: 4-FlipChip
товару немає в наявності
В кошику  од. на суму  грн.
Z0402MF0AA2 z04.pdf
Z0402MF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 3 mA
Current - Gate Trigger (Igt) (Max): 3 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
товару немає в наявності
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Z0405NF0AA2 z04.pdf
Z0405NF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0409NF0AA2 z04.pdf
Z0409NF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 800V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 10 mA
Current - Gate Trigger (Igt) (Max): 10 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 800 V
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Z0410MF0AA2 z04.pdf
Z0410MF0AA2
Виробник: STMicroelectronics
Description: TRIAC 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 25 mA
Current - Gate Trigger (Igt) (Max): 25 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
Z0405MF0AA2 z04.pdf
Z0405MF0AA2
Виробник: STMicroelectronics
Description: TRIAC SENS GATE 600V 4A TO202-3
Packaging: Tube
Package / Case: TO-202 No Tab
Mounting Type: Through Hole
Triac Type: Logic - Sensitive Gate
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 5 mA
Current - Gate Trigger (Igt) (Max): 5 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 20A, 21A
Voltage - Gate Trigger (Vgt) (Max): 1.3 V
Supplier Device Package: TO-202-3
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 4 A
Voltage - Off State: 600 V
товару немає в наявності
В кошику  од. на суму  грн.
STGF15M65DF2 en.DM00237960.pdf
STGF15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 31 W
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.79 грн
50+69.77 грн
100+62.51 грн
500+46.71 грн
1000+42.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGF5H60DF en.DM00149621.pdf
STGF5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220FP
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 24 W
товару немає в наявності
В кошику  од. на суму  грн.
STGP15M65DF2 en.DM00237971.pdf
STGP15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
товару немає в наявності
В кошику  од. на суму  грн.
STGP30H60DFB en.DM00125119.pdf
STGP30H60DFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
на замовлення 867 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+203.00 грн
50+96.62 грн
100+87.04 грн
500+65.94 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGP5H60DF en.DM00149621.pdf
STGP5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-220
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
на замовлення 1944 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+137.51 грн
50+63.58 грн
100+56.88 грн
500+42.35 грн
1000+38.80 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGW30M65DF2 en.DM00177695.pdf
STGW30M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31.6ns/115ns
Switching Energy: 300µJ (on), 960µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 80 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 258 W
на замовлення 120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+319.23 грн
30+169.34 грн
120+138.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STP110N8F7 en.DM00064632.pdf
STP110N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 80A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 40A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
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STP27N60M2-EP en.DM00251846.pdf
STP27N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
товару немає в наявності
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STW27N60M2-EP en.DM00251846.pdf
STW27N60M2-EP
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 163mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 100 V
на замовлення 598 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+295.49 грн
30+156.99 грн
120+128.83 грн
510+101.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF7LN80K5 en.DM00256224.pdf
STF7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.90 грн
50+92.69 грн
100+88.99 грн
500+69.76 грн
1000+64.39 грн
2000+59.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF9N80K5 en.DM00064632.pdf
STF9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STFI7LN80K5 en.DM00256619.pdf
STFI7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
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STFI9N80K5 STF%28I%299N80K5.pdf
STFI9N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 7A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 3.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-281 (I2PAKFP)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 100 V
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STP7LN80K5 en.DM00260911.pdf
STP7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 452 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.90 грн
50+98.64 грн
100+93.32 грн
Мінімальне замовлення: 2
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STU7LN80K5 en.DM00261198.pdf
STU7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.64 грн
75+95.73 грн
150+86.58 грн
525+69.05 грн
1050+63.77 грн
2025+59.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STF10LN80K5 en.DM00176897.pdf
STF10LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.38 грн
50+120.96 грн
100+115.33 грн
Мінімальне замовлення: 2
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STP10LN80K5 en.DM00176858.pdf
STP10LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 630mOhm @ 4A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 427 pF @ 100 V
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STGIF7CH60TS-L en.DM00122690.pdf
STGIF7CH60TS-L
Виробник: STMicroelectronics
Description: IGBT IPM 600V 10A 26-PWRDIP MOD
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+793.98 грн
13+482.45 грн
104+386.73 грн
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STWA48N60M2 en.DM00250450.pdf
STWA48N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 42A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 21A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 Long Leads
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 100 V
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STF26N60M2 en.DM00166992.pdf
STF26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+242.29 грн
50+117.51 грн
100+106.22 грн
500+81.13 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STFI26N60M2 en.DM00166992.pdf
STFI26N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 20A I2PAKFP
Packaging: Tube
Package / Case: TO-262-3 Full Pack, I2PAK
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-281 (I2PAKFP)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
товару немає в наявності
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STIEC45-24ACS en.CD00258714.pdf
STIEC45-24ACS
Виробник: STMicroelectronics
Description: TVS DIODE 24VWM 42VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 42V
Power Line Protection: No
Part Status: Obsolete
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STIEC45-26ACS en.CD00258714.pdf
STIEC45-26ACS
Виробник: STMicroelectronics
Description: TVS DIODE 26VWM 45VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 45V
Power Line Protection: No
Part Status: Obsolete
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STIEC45-28ACS en.CD00258714.pdf
STIEC45-28ACS
Виробник: STMicroelectronics
Description: TVS DIODE 28VWM 49VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 500A (8/20µs)
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 49V
Power Line Protection: No
Part Status: Obsolete
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STD46N6F7 en.DM00227324.pdf
STD46N6F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 7.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1065 pF @ 30 V
товару немає в наявності
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STGB5H60DF en.DM00149621.pdf
STGB5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 88 W
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STGD5H60DF en.DM00149621.pdf
STGD5H60DF
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 134.5 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 5A
Supplier Device Package: DPAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/140ns
Switching Energy: 56µJ (on), 78.5µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 43 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 20 A
Power - Max: 83 W
на замовлення 3906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.86 грн
10+60.61 грн
100+40.17 грн
500+29.49 грн
1000+26.85 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
STL50DN6F7 en.DM00216100.pdf
STL50DN6F7
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 60V 57A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 62.5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 30V
Rds On (Max) @ Id, Vgs: 11mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
на замовлення 6104 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+130.15 грн
10+93.25 грн
100+63.65 грн
500+47.56 грн
1000+45.27 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STD7LN80K5 en.DM00256349.pdf
STD7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
на замовлення 2443 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+155.52 грн
10+119.10 грн
100+81.88 грн
500+62.47 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL7LN80K5 en.DM00261218.pdf
STL7LN80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.15Ohm @ 2.5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 100 V
товару немає в наявності
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STL11N6F7 en.DM00216237.pdf
STL11N6F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 11A POWERFLAT
товару немає в наявності
В кошику  од. на суму  грн.
STL100N8F7 en.DM00140134.pdf
STL100N8F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 80V 100A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 10A, 10V
Power Dissipation (Max): 4.8W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 46.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3435 pF @ 40 V
товару немає в наявності
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STL8DN6LF6AG en.DM00208902.pdf
STL8DN6LF6AG
Виробник: STMicroelectronics
Description: MOSFET 2N-CH 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17932 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.87 грн
10+76.38 грн
100+54.66 грн
500+42.98 грн
1000+39.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STL8N6LF6AG en.DM00213144.pdf
STL8N6LF6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 32A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 9.6A, 10V
Power Dissipation (Max): 4.8W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1340 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4070 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+144.88 грн
10+88.99 грн
100+60.00 грн
500+44.64 грн
1000+40.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STB80N4F6AG en.DM00206725.pdf
STB80N4F6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 40A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V
Qualification: AEC-Q101
на замовлення 920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+154.70 грн
10+104.83 грн
100+74.33 грн
500+56.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGB15M65DF2 en.DM00096991.pdf
STGB15M65DF2
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 650V 30A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 142 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/93ns
Switching Energy: 90µJ (on), 450µJ (off)
Test Condition: 400V, 15A, 12Ohm, 15V
Gate Charge: 45 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 136 W
на замовлення 2516 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.71 грн
10+107.20 грн
100+73.21 грн
500+55.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STGB30H60DLFB
STGB30H60DLFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/146ns
Switching Energy: 393µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
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STH290N4F6-2AG en.DM00206158.pdf
STH290N4F6-2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-2
товару немає в наявності
В кошику  од. на суму  грн.
STH290N4F6-6AG en.DM00206158.pdf
STH290N4F6-6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 40V 180A H2PAK-6
на замовлення 975 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
STD19N3LLH6AG en.DM00064632.pdf
STD19N3LLH6AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 30V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 321 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STD85N10F7AG en.DM00136911.pdf
STD85N10F7AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 100V 70A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 40A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 19956 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+153.07 грн
10+102.78 грн
100+74.30 грн
500+55.93 грн
1000+55.34 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STGB30H60DFB en.DM00125119.pdf
STGB30H60DFB
Виробник: STMicroelectronics
Description: IGBT TRENCH FS 600V 60A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/146ns
Switching Energy: 383µJ (on), 293µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 149 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 260 W
товару немає в наявності
В кошику  од. на суму  грн.
STL7N60M2 en.DM00157582.pdf
STL7N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2A, 10V
Power Dissipation (Max): 4W (Ta), 67W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFLAT™ (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 100 V
на замовлення 2272 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.87 грн
10+72.28 грн
100+48.36 грн
500+35.76 грн
1000+32.66 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STHVDAC-256MTGF3 en.DM00229754.pdf
STHVDAC-256MTGF3
Виробник: STMicroelectronics
Description: IC DAC 7BIT 20FLIPCHIP
товару немає в наявності
В кошику  од. на суму  грн.
STM32F769NIH6 en.DM00273119.pdf
STM32F769NIH6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Part Status: Active
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 1004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1650.98 грн
10+1275.50 грн
25+1196.96 грн
160+1021.21 грн
320+994.83 грн
640+973.12 грн
В кошику  од. на суму  грн.
STM32F767ZIT6 en.DM00273119.pdf
STM32F767ZIT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, MMC/SD/SDIO, QSPI, SAI, SPDIF, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 1548 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1506.92 грн
10+1160.81 грн
60+1034.23 грн
120+938.45 грн
300+904.54 грн
540+886.94 грн
В кошику  од. на суму  грн.
STM32F769I-EVAL en.DM00276583.pdf
STM32F769I-EVAL
Виробник: STMicroelectronics
Description: STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Part Status: Active
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+26121.89 грн
В кошику  од. на суму  грн.
STM32F769I-DISCO en.DM00276576.pdf
STM32F769I-DISCO
Виробник: STMicroelectronics
Description: DISCOVERY STM32F769 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M7
Board Type: Evaluation Platform
Utilized IC / Part: STM32F769
Platform: Discovery
Part Status: Active
на замовлення 215 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6249.51 грн
В кошику  од. на суму  грн.
LSM303AGRTR en.DM00177685.pdf
LSM303AGRTR
Виробник: STMicroelectronics
Description: IMU ACCEL/MAG I2C/SPI 12LGA
Packaging: Tape & Reel (TR)
Package / Case: 12-VFLGA Module
Output Type: I2C, SPI
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Sensor Type: Accelerometer, Magnetometer, Temperature, 6 Axis
Supplier Device Package: 12-LGA (2x2)
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
ST3485EIYDT en.CD00003137.pdf
ST3485EIYDT
Виробник: STMicroelectronics
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 15Mbps
Protocol: RS422, RS485
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 70 mV
Duplex: Half
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
на замовлення 27500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+110.00 грн
5000+103.84 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
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