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L6599AFD L6599AFD STMicroelectronics en.DM00218347.pdf Description: ULTRA-EXTREME TEMPERATURE RANGE
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 125°C
Voltage - Supply: 8.85V ~ 16V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Active
Current - Supply: 3.5 mA
DigiKey Programmable: Not Verified
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STFU13N65M2 STFU13N65M2 STMicroelectronics en.DM00163643.pdf Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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STFU15N80K5 STFU15N80K5 STMicroelectronics en.DM00170681.pdf Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
3+156.77 грн
50+128.51 грн
100+127.14 грн
500+114.85 грн
Мінімальне замовлення: 3
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STFU15NM65N STFU15NM65N STMicroelectronics en.DM00168872.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
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STFU24N60M2 STFU24N60M2 STMicroelectronics en.DM00168868.pdf Description: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STGIB10CH60TS-L STGIB10CH60TS-L STMicroelectronics en.DM00116577.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+1075.14 грн
13+703.08 грн
104+552.51 грн
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STGIB15CH60TS-E STGIB15CH60TS-E STMicroelectronics en.DM00122999.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
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STGIF10CH60TS-L STGIF10CH60TS-L STMicroelectronics en.DM00116137.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
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STGIF5CH60TS-L STGIF5CH60TS-L STMicroelectronics en.DM00122681.pdf Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 8 A
Voltage: 600 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
1+865.05 грн
13+556.48 грн
104+431.32 грн
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STNRG288A STNRG288A STMicroelectronics en.DM00179358.pdf Description: DIGITAL CONTROLLER FOR POWER CON
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Applications: PWM Generator
Current - Supply: 100mA
Supplier Device Package: 28-TSSOP
Part Status: Obsolete
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STP220N6F7 STP220N6F7 STMicroelectronics en.DM00122330.pdf Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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SMC30J36A SMC30J36A STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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SMC30J36CA SMC30J36CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMC30J40A SMC30J40A STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMC30J40CA SMC30J40CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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SMC30J48CA SMC30J48CA STMicroelectronics en.DM00035134.pdf Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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STM32F756ZGT6 STM32F756ZGT6 STMicroelectronics en.DM00166114.pdf Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, Ethernet, HDMI-CEC, I2C, IrDA, LINbus, MMC/SD, SAI, SPDIFRX, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 1510 шт:
термін постачання 21-31 дні (днів)
1+1465.88 грн
10+1125.06 грн
60+1000.39 грн
120+907.17 грн
240+881.12 грн
480+859.68 грн
В кошику  од. на суму  грн.
STM32F745VGT6 STM32F745VGT6 STMicroelectronics en.DM00166116.pdf Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SD, SPDIF-Rx, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Verified
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
1+1149.94 грн
10+1017.92 грн
25+975.76 грн
90+806.83 грн
270+767.23 грн
450+717.73 грн
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EVAL-ST95HF EVAL-ST95HF STMicroelectronics en.DM00122639.pdf Description: EVALUATION BOARD FOR ST95HF
Packaging: Box
For Use With/Related Products: ST95HF
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Obsolete
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STEVAL-ISA176V1 STEVAL-ISA176V1 STMicroelectronics en.CD00285102.pdf Description: EVAL BOARD FOR ALTAIR05T800
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ALTAIR05T-800
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 5W
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STW37N60DM2AG STW37N60DM2AG STMicroelectronics en.DM00223410.pdf Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+422.57 грн
30+253.73 грн
120+248.64 грн
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STW65N65DM2AG STW65N65DM2AG STMicroelectronics STW65N65DM2AG.pdf Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
1+800.58 грн
30+418.90 грн
120+386.10 грн
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STP45N60DM2AG STP45N60DM2AG STMicroelectronics en.DM00211656.pdf Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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STW72N60DM2AG STW72N60DM2AG STMicroelectronics en.DM00152603.pdf Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
1+519.66 грн
30+326.77 грн
120+305.05 грн
В кошику  од. на суму  грн.
STW58N60DM2AG STW58N60DM2AG STMicroelectronics en.DM00187802.pdf Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
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STW45N60DM2AG STW45N60DM2AG STMicroelectronics en.DM00211587.pdf Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
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STP45N40DM2AG STP45N40DM2AG STMicroelectronics en.DM00213649.pdf Description: MOSFET N-CH 400V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1557 шт:
термін постачання 21-31 дні (днів)
1+593.67 грн
50+302.56 грн
100+284.33 грн
500+228.15 грн
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STW58N65DM2AG STW58N65DM2AG STMicroelectronics en.DM00228874.pdf Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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STW50N65DM2AG STW50N65DM2AG STMicroelectronics en.DM00214262.pdf Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
1+396.31 грн
30+244.79 грн
510+231.97 грн
В кошику  од. на суму  грн.
EMIF02-01OABRY EMIF02-01OABRY STMicroelectronics EMIF02-01OABRY.pdf Description: CMC 2LN ESD AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STB37N60DM2AG STB37N60DM2AG STMicroelectronics en.DM00224610.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+244.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB45N60DM2AG STB45N60DM2AG STMicroelectronics en.DM00206852.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
1000+238.49 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB45N40DM2AG STB45N40DM2AG STMicroelectronics en.DM00225195.pdf Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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В кошику  од. на суму  грн.
STB45N50DM2AG STB45N50DM2AG STMicroelectronics en.DM00232376.pdf Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1000+244.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB34N50DM2AG STB34N50DM2AG STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EMIF02-01OABRY EMIF02-01OABRY STMicroelectronics EMIF02-01OABRY.pdf Description: CMC 2LN ESD AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STB37N60DM2AG STB37N60DM2AG STMicroelectronics en.DM00224610.pdf Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1247 шт:
термін постачання 21-31 дні (днів)
1+509.32 грн
10+360.48 грн
100+287.90 грн
В кошику  од. на суму  грн.
STB45N60DM2AG STB45N60DM2AG STMicroelectronics en.DM00206852.pdf Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
на замовлення 7315 шт:
термін постачання 21-31 дні (днів)
1+467.14 грн
10+335.96 грн
100+281.09 грн
В кошику  од. на суму  грн.
STB45N40DM2AG STB45N40DM2AG STMicroelectronics en.DM00225195.pdf Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
1+604.82 грн
10+400.95 грн
В кошику  од. на суму  грн.
STB45N50DM2AG STB45N50DM2AG STMicroelectronics en.DM00232376.pdf Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 2725 шт:
термін постачання 21-31 дні (днів)
1+560.25 грн
10+369.14 грн
100+287.90 грн
В кошику  од. на суму  грн.
STB34N50DM2AG STB34N50DM2AG STMicroelectronics en.DM00223646.pdf Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
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STM32F429I-DISC1 STM32F429I-DISC1 STMicroelectronics en.DM00094498.pdf Description: DISCOVERY STM32F429 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F429
Platform: Discovery
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+2281.59 грн
В кошику  од. на суму  грн.
EVAL-L5963 EVAL-L5963 STMicroelectronics en.DM00230702.pdf Description: EVAL BOARD FOR L5963D
товару немає в наявності
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STEVAL-ISA164V1 STEVAL-ISA164V1 STMicroelectronics en.DM00179358.pdf Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Function: Digital Power Controller
Type: Power Management
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+5004.85 грн
В кошику  од. на суму  грн.
STEVAL-IDB006V1M STEVAL-IDB006V1M STMicroelectronics en.DM00240699.pdf Description: EVAL BOARD USB DONGLE SPBTLE-RF
Packaging: Bulk
For Use With/Related Products: BlueNRG-MS, SPBTLE-RF
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: BlueNRG-MS, SPBTLE-RF
Supplied Contents: Board(s)
товару немає в наявності
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STEVAL-ILL075V1 STEVAL-ILL075V1 STMicroelectronics en.DM00185105.pdf Description: EVAL BOARD FOR STLUX385A
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SPBTLE-RF SPBTLE-RF STMicroelectronics Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 11-SMD Module
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.1
Current - Receiving: 8.5mA
Current - Transmitting: 8.5mA
Antenna Type: Integrated, Chip
Utilized IC / Part: BlueNRG
RF Family/Standard: Bluetooth
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
товару немає в наявності
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STM32F410RBT6 STM32F410RBT6 STMicroelectronics stm32f410cb.pdf Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)
2+314.34 грн
10+229.36 грн
25+211.08 грн
160+174.26 грн
320+168.09 грн
640+163.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STM32F410CBU6 STM32F410CBU6 STMicroelectronics stm32f410cb.pdf Description: IC MCU 32BIT 128KB FLSH 48UFQFPN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-UFQFPN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 3504 шт:
термін постачання 21-31 дні (днів)
2+282.51 грн
10+205.76 грн
25+189.16 грн
100+160.43 грн
260+151.96 грн
520+147.10 грн
1040+140.75 грн
2600+136.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STM32F479NIH6 STM32F479NIH6 STMicroelectronics en.DM00208574.pdf Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SDIO, SPI, UART/USART, USB, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Number of I/O: 161
DigiKey Programmable: Not Verified
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
1+1562.17 грн
10+1382.93 грн
25+1325.61 грн
160+1096.10 грн
320+1042.30 грн
480+975.06 грн
В кошику  од. на суму  грн.
L5963D-EHX L5963D-EHX STMicroelectronics en.DM00240738.pdf Description: IC REG TRPL BUCK/LNR SYNC 36PSSO
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STM32F091RCY6TR STM32F091RCY6TR STMicroelectronics en.DM00115237.pdf Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
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M24M02-DWMN3TP/K M24M02-DWMN3TP/K STMicroelectronics en.DM00200595.pdf Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
2500+235.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
M24C64-FCU6TP/TF M24C64-FCU6TP/TF STMicroelectronics en.CD00259166.pdf Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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M24C32-FCU6TP/TF M24C32-FCU6TP/TF STMicroelectronics en.CD00001012.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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STM32F091RCY6TR STM32F091RCY6TR STMicroelectronics en.DM00115237.pdf Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Cut Tape (CT)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
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M24M02-DWMN3TP/K M24M02-DWMN3TP/K STMicroelectronics en.DM00200595.pdf Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 16537 шт:
термін постачання 21-31 дні (днів)
2+297.63 грн
10+267.30 грн
25+259.33 грн
50+237.73 грн
100+232.08 грн
250+224.66 грн
500+215.52 грн
1000+213.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
M24C32-FCU6TP/TF M24C32-FCU6TP/TF STMicroelectronics en.CD00001012.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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1.5KE33CARL 1.5KE33CARL STMicroelectronics en.CD00000663.pdf Description: TVS DIODE 28.2VWM 59VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 169A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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1.5KE39ARL 1.5KE39ARL STMicroelectronics en.CD00000663.pdf Description: TVS DIODE 33.3VWM 69.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 2400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 143A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 8795 шт:
термін постачання 21-31 дні (днів)
6+54.91 грн
10+43.37 грн
100+29.96 грн
500+22.35 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
L6599AFD en.DM00218347.pdf
L6599AFD
Виробник: STMicroelectronics
Description: ULTRA-EXTREME TEMPERATURE RANGE
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 125°C
Voltage - Supply: 8.85V ~ 16V
Applications: Resonant Converter Controller
Supplier Device Package: 16-SO
Part Status: Active
Current - Supply: 3.5 mA
DigiKey Programmable: Not Verified
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STFU13N65M2 en.DM00163643.pdf
STFU13N65M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 100 V
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STFU15N80K5 en.DM00170681.pdf
STFU15N80K5
Виробник: STMicroelectronics
Description: MOSFET N-CH 800V 14A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 375mOhm @ 7A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+156.77 грн
50+128.51 грн
100+127.14 грн
500+114.85 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
STFU15NM65N en.DM00168872.pdf
STFU15NM65N
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 33.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 983 pF @ 50 V
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STFU24N60M2 en.DM00168868.pdf
STFU24N60M2
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 18A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 100 V
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STGIB10CH60TS-L en.DM00116577.pdf
STGIB10CH60TS-L
Виробник: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1075.14 грн
13+703.08 грн
104+552.51 грн
В кошику  од. на суму  грн.
STGIB15CH60TS-E en.DM00122999.pdf
STGIB15CH60TS-E
Виробник: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.327", 33.70mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 20 A
Voltage: 600 V
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STGIF10CH60TS-L en.DM00116137.pdf
STGIF10CH60TS-L
Виробник: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 15 A
Voltage: 600 V
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STGIF5CH60TS-L en.DM00122681.pdf
STGIF5CH60TS-L
Виробник: STMicroelectronics
Description: SLLIMM(TM) - 2ND SERIES IPM, 3-P
Packaging: Tube
Package / Case: 26-PowerDIP Module (1.134", 28.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 1500Vrms
Current: 8 A
Voltage: 600 V
на замовлення 141 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+865.05 грн
13+556.48 грн
104+431.32 грн
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STNRG288A en.DM00179358.pdf
STNRG288A
Виробник: STMicroelectronics
Description: DIGITAL CONTROLLER FOR POWER CON
Packaging: Tube
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.5V
Applications: PWM Generator
Current - Supply: 100mA
Supplier Device Package: 28-TSSOP
Part Status: Obsolete
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STP220N6F7 en.DM00122330.pdf
STP220N6F7
Виробник: STMicroelectronics
Description: MOSFET N-CH 60V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 60A, 10V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
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SMC30J36A en.DM00035134.pdf
SMC30J36A
Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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SMC30J36CA en.DM00035134.pdf
SMC30J36CA
Виробник: STMicroelectronics
Description: TVS DIODE 36VWM 58.1VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 48.41A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMC30J40A en.DM00035134.pdf
SMC30J40A
Виробник: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
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SMC30J40CA en.DM00035134.pdf
SMC30J40CA
Виробник: STMicroelectronics
Description: TVS DIODE 40VWM 64.5VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 43.5A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 44.4V
Voltage - Clamping (Max) @ Ipp: 64.5V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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SMC30J48CA en.DM00035134.pdf
SMC30J48CA
Виробник: STMicroelectronics
Description: TVS DIODE 48VWM 76.6VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SMC
Bidirectional Channels: 1
Voltage - Breakdown (Min): 53.2V
Voltage - Clamping (Max) @ Ipp: 76.6V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Active
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STM32F756ZGT6 en.DM00166114.pdf
STM32F756ZGT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, Ethernet, HDMI-CEC, I2C, IrDA, LINbus, MMC/SD, SAI, SPDIFRX, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 114
DigiKey Programmable: Not Verified
на замовлення 1510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1465.88 грн
10+1125.06 грн
60+1000.39 грн
120+907.17 грн
240+881.12 грн
480+859.68 грн
В кошику  од. на суму  грн.
STM32F745VGT6 en.DM00166116.pdf
STM32F745VGT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 1MB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 216MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 320K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M7
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SD, SPDIF-Rx, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 82
DigiKey Programmable: Verified
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1149.94 грн
10+1017.92 грн
25+975.76 грн
90+806.83 грн
270+767.23 грн
450+717.73 грн
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EVAL-ST95HF en.DM00122639.pdf
EVAL-ST95HF
Виробник: STMicroelectronics
Description: EVALUATION BOARD FOR ST95HF
Packaging: Box
For Use With/Related Products: ST95HF
Frequency: 13.56MHz
Type: Near Field Communication (NFC)
Supplied Contents: Board(s)
Part Status: Obsolete
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STEVAL-ISA176V1 en.CD00285102.pdf
STEVAL-ISA176V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR ALTAIR05T800
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 1A
Contents: Board(s)
Regulator Topology: Flyback
Board Type: Fully Populated
Utilized IC / Part: ALTAIR05T-800
Supplied Contents: Board(s)
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Part Status: Active
Power - Output: 5W
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STW37N60DM2AG en.DM00223410.pdf
STW37N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.57 грн
30+253.73 грн
120+248.64 грн
В кошику  од. на суму  грн.
STW65N65DM2AG STW65N65DM2AG.pdf
STW65N65DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 30A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 228 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+800.58 грн
30+418.90 грн
120+386.10 грн
В кошику  од. на суму  грн.
STP45N60DM2AG en.DM00211656.pdf
STP45N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STW72N60DM2AG en.DM00152603.pdf
STW72N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 66A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 33A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5508 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 258 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+519.66 грн
30+326.77 грн
120+305.05 грн
В кошику  од. на суму  грн.
STW58N60DM2AG en.DM00187802.pdf
STW58N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STW45N60DM2AG en.DM00211587.pdf
STW45N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 93mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STP45N40DM2AG en.DM00213649.pdf
STP45N40DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 38A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1557 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+593.67 грн
50+302.56 грн
100+284.33 грн
500+228.15 грн
В кошику  од. на суму  грн.
STW58N65DM2AG en.DM00228874.pdf
STW58N65DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 24A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STW50N65DM2AG en.DM00214262.pdf
STW50N65DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 650V 28A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 87mOhm @ 19A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 100 V
Qualification: AEC-Q101
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.31 грн
30+244.79 грн
510+231.97 грн
В кошику  од. на суму  грн.
EMIF02-01OABRY EMIF02-01OABRY.pdf
EMIF02-01OABRY
Виробник: STMicroelectronics
Description: CMC 2LN ESD AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STB37N60DM2AG en.DM00224610.pdf
STB37N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+244.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB45N60DM2AG en.DM00206852.pdf
STB45N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+238.49 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB45N40DM2AG en.DM00225195.pdf
STB45N40DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STB45N50DM2AG en.DM00232376.pdf
STB45N50DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+244.26 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
STB34N50DM2AG en.DM00223646.pdf
STB34N50DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
EMIF02-01OABRY EMIF02-01OABRY.pdf
EMIF02-01OABRY
Виробник: STMicroelectronics
Description: CMC 2LN ESD AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STB37N60DM2AG en.DM00224610.pdf
STB37N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 28A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 14A, 10V
Power Dissipation (Max): 210W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 100 V
Qualification: AEC-Q101
на замовлення 1247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+509.32 грн
10+360.48 грн
100+287.90 грн
В кошику  од. на суму  грн.
STB45N60DM2AG en.DM00206852.pdf
STB45N60DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 600V 34A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 17A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
Qualification: AEC-Q101
на замовлення 7315 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+467.14 грн
10+335.96 грн
100+281.09 грн
В кошику  од. на суму  грн.
STB45N40DM2AG en.DM00225195.pdf
STB45N40DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 400V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 19A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 21 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+604.82 грн
10+400.95 грн
В кошику  од. на суму  грн.
STB45N50DM2AG en.DM00232376.pdf
STB45N50DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 84mOhm @ 17.5A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 100 V
Qualification: AEC-Q101
на замовлення 2725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+560.25 грн
10+369.14 грн
100+287.90 грн
В кошику  од. на суму  грн.
STB34N50DM2AG en.DM00223646.pdf
STB34N50DM2AG
Виробник: STMicroelectronics
Description: MOSFET N-CH 500V 26A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12.5A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
STM32F429I-DISC1 en.DM00094498.pdf
STM32F429I-DISC1
Виробник: STMicroelectronics
Description: DISCOVERY STM32F429 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), LCD
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: STM32F429
Platform: Discovery
Part Status: Active
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2281.59 грн
В кошику  од. на суму  грн.
EVAL-L5963 en.DM00230702.pdf
EVAL-L5963
Виробник: STMicroelectronics
Description: EVAL BOARD FOR L5963D
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-ISA164V1 en.DM00179358.pdf
STEVAL-ISA164V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STNRG388A
Packaging: Bulk
Function: Digital Power Controller
Type: Power Management
Utilized IC / Part: STNRG388A
Supplied Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5004.85 грн
В кошику  од. на суму  грн.
STEVAL-IDB006V1M en.DM00240699.pdf
STEVAL-IDB006V1M
Виробник: STMicroelectronics
Description: EVAL BOARD USB DONGLE SPBTLE-RF
Packaging: Bulk
For Use With/Related Products: BlueNRG-MS, SPBTLE-RF
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Contents: Board(s)
Utilized IC / Part: BlueNRG-MS, SPBTLE-RF
Supplied Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
STEVAL-ILL075V1 en.DM00185105.pdf
STEVAL-ILL075V1
Виробник: STMicroelectronics
Description: EVAL BOARD FOR STLUX385A
товару немає в наявності
В кошику  од. на суму  грн.
SPBTLE-RF
SPBTLE-RF
Виробник: STMicroelectronics
Description: RF TXRX MOD BLUETOOTH CHIP SMD
Packaging: Tray
Package / Case: 11-SMD Module
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.7V ~ 3.6V
Power - Output: 4dBm
Protocol: Bluetooth v4.1
Current - Receiving: 8.5mA
Current - Transmitting: 8.5mA
Antenna Type: Integrated, Chip
Utilized IC / Part: BlueNRG
RF Family/Standard: Bluetooth
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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STM32F410RBT6 stm32f410cb.pdf
STM32F410RBT6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 16x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 50
DigiKey Programmable: Not Verified
на замовлення 1028 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+314.34 грн
10+229.36 грн
25+211.08 грн
160+174.26 грн
320+168.09 грн
640+163.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STM32F410CBU6 stm32f410cb.pdf
STM32F410CBU6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 128KB FLSH 48UFQFPN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 10x12b; D/A 1x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 48-UFQFPN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 3504 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.51 грн
10+205.76 грн
25+189.16 грн
100+160.43 грн
260+151.96 грн
520+147.10 грн
1040+140.75 грн
2600+136.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
STM32F479NIH6 en.DM00208574.pdf
STM32F479NIH6
Виробник: STMicroelectronics
Description: IC MCU 32BIT 2MB FLASH 216TFBGA
Packaging: Tray
Package / Case: 216-TFBGA
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, EBI/EMI, Ethernet, I2C, IrDA, LINbus, SAI, SDIO, SPI, UART/USART, USB, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, POR, PWM, WDT
Supplier Device Package: 216-TFBGA (13x13)
Number of I/O: 161
DigiKey Programmable: Not Verified
на замовлення 1466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1562.17 грн
10+1382.93 грн
25+1325.61 грн
160+1096.10 грн
320+1042.30 грн
480+975.06 грн
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L5963D-EHX en.DM00240738.pdf
L5963D-EHX
Виробник: STMicroelectronics
Description: IC REG TRPL BUCK/LNR SYNC 36PSSO
товару немає в наявності
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STM32F091RCY6TR en.DM00115237.pdf
STM32F091RCY6TR
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
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M24M02-DWMN3TP/K en.DM00200595.pdf
M24M02-DWMN3TP/K
Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+235.06 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
M24C64-FCU6TP/TF en.CD00259166.pdf
M24C64-FCU6TP/TF
Виробник: STMicroelectronics
Description: IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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M24C32-FCU6TP/TF en.CD00001012.pdf
M24C32-FCU6TP/TF
Виробник: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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STM32F091RCY6TR en.DM00115237.pdf
STM32F091RCY6TR
Виробник: STMicroelectronics
Description: IC MCU 32BIT 256KB FLASH 64WLCSP
Packaging: Cut Tape (CT)
Package / Case: 64-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 19x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-WLCSP (3.35x3.59)
Part Status: Active
Number of I/O: 52
DigiKey Programmable: Not Verified
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M24M02-DWMN3TP/K en.DM00200595.pdf
M24M02-DWMN3TP/K
Виробник: STMicroelectronics
Description: IC EEPROM 2MBIT I2C 1MHZ 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 256K x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 16537 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+297.63 грн
10+267.30 грн
25+259.33 грн
50+237.73 грн
100+232.08 грн
250+224.66 грн
500+215.52 грн
1000+213.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
M24C32-FCU6TP/TF en.CD00001012.pdf
M24C32-FCU6TP/TF
Виробник: STMicroelectronics
Description: IC EEPROM 32KBIT I2C 1MHZ 4WLCSP
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.80x0.67)
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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1.5KE33CARL en.CD00000663.pdf
1.5KE33CARL
Виробник: STMicroelectronics
Description: TVS DIODE 28.2VWM 59VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 1350pF @ 1MHz
Current - Peak Pulse (10/1000µs): 169A (8/20µs)
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 59V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
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1.5KE39ARL en.CD00000663.pdf
1.5KE39ARL
Виробник: STMicroelectronics
Description: TVS DIODE 33.3VWM 69.7VC DO201
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 2400pF @ 1MHz
Current - Peak Pulse (10/1000µs): 143A (8/20µs)
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 69.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
на замовлення 8795 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+54.91 грн
10+43.37 грн
100+29.96 грн
500+22.35 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
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