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KBU401G T0G KBU401G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 50V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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KBU402G T0G KBU402G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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KBU403G T0G KBU403G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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KBU404G T0G KBU404G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU405G T0G KBU405G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 600V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU406G T0G KBU406G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU407G T0G KBU407G T0G Taiwan Semiconductor Corporation KBU401G_H14_523660DS.pdf Description: BRIDGE RECT 1PHASE 1KV 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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KBU604G T0G KBU604G T0G Taiwan Semiconductor Corporation KBU60xG_H14_D1409011_DS.pdf Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU605G T0G KBU605G T0G Taiwan Semiconductor Corporation KBU60xG_H14_D1409011_DS.pdf Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU606G T0G KBU606G T0G Taiwan Semiconductor Corporation KBU60xG_H14_D1409011_DS.pdf Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU801G T0G KBU801G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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KBU802G T0G KBU802G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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KBU803G T0G KBU803G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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KBU804G T0G KBU804G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU805G T0G KBU805G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU806G T0G KBU806G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU807G T0G KBU807G T0G Taiwan Semiconductor Corporation KBU80xG_H14_D1409012_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TLD5S15AH TLD5S15AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S22AH TLD5S22AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 22VWM 35.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S24AH TLD5S24AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S26AH TLD5S26AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 26VWM 42.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S28AH TLD5S28AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 28VWM 45.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S30AH TLD5S30AH Taiwan Semiconductor Corporation pdf.php?pn=TLD5S30AH Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S33AH TLD5S33AH Taiwan Semiconductor Corporation TLD5S10AH%20SERIES_B1809.pdf Description: 3600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
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TLD5S36AH TLD5S36AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
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TLD6S17AH TLD6S17AH Taiwan Semiconductor Corporation TLD6S10AH%20SERIES_B1809.pdf Description: 4600W,10V-43V SURFACE MOUNT TRAN
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TLD8S17AH TLD8S17AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 17VWM 27.6VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 239A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
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SMA4S40AH SMA4S40AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 40VWM 64.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
14000+6.81 грн
28000+6.47 грн
Мінімальне замовлення: 14000
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SMA4S56AH SMA4S56AH Taiwan Semiconductor Corporation SMA4S12AH%20SERIES_B1904.pdf Description: 400W, 10V - 70V, SMD TVS PG STRU
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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SMA6S21AH SMA6S21AH Taiwan Semiconductor Corporation SMA6S12AH SERIES_B1904.pdf Description: 600W, 10V - 70V, SMD TVS PG STRU
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TS19820CS TS19820CS Taiwan Semiconductor Corporation Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
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TLD5S15AH TLD5S15AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S22AH TLD5S22AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 22VWM 35.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S24AH TLD5S24AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S26AH TLD5S26AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 26VWM 42.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S28AH TLD5S28AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 28VWM 45.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S30AH TLD5S30AH Taiwan Semiconductor Corporation pdf.php?pn=TLD5S30AH Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+229.11 грн
10+183.59 грн
100+146.11 грн
Мінімальне замовлення: 2
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TLD5S33AH TLD5S33AH Taiwan Semiconductor Corporation TLD5S10AH%20SERIES_B1809.pdf Description: 3600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLD5S36AH TLD5S36AH Taiwan Semiconductor Corporation TLD5S10AH SERIES_D2103.pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
на замовлення 1479 шт:
термін постачання 21-31 дні (днів)
1+429.58 грн
10+371.43 грн
100+304.29 грн
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TLD6S17AH TLD6S17AH Taiwan Semiconductor Corporation TLD6S10AH%20SERIES_B1809.pdf Description: 4600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
1+506.49 грн
10+437.62 грн
100+358.57 грн
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TLD8S17AH TLD8S17AH Taiwan Semiconductor Corporation TLD8S10AH SERIES_D2103.pdf Description: TVS DIODE 17VWM 27.6VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 239A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
1+549.86 грн
10+475.52 грн
100+389.63 грн
В кошику  од. на суму  грн.
SMA4S40AH SMA4S40AH Taiwan Semiconductor Corporation SMA4S12AH SERIES_C2103.pdf Description: TVS DIODE 40VWM 64.9VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
10+35.18 грн
13+24.35 грн
100+12.27 грн
500+10.21 грн
1000+7.94 грн
2000+7.11 грн
5000+6.84 грн
Мінімальне замовлення: 10
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SMA4S56AH SMA4S56AH Taiwan Semiconductor Corporation SMA4S12AH%20SERIES_B1904.pdf Description: 400W, 10V - 70V, SMD TVS PG STRU
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMA6S21AH SMA6S21AH Taiwan Semiconductor Corporation SMA6S12AH SERIES_B1904.pdf Description: 600W, 10V - 70V, SMD TVS PG STRU
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TS19820CS TS19820CS Taiwan Semiconductor Corporation Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
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1N4003GA0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6,2015_DS.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4003GR0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6,2015_DS.pdf Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4004GA0 1N4004GA0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6%2C2015_DS.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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1N4004GR0 1N4004GR0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6%2C2015_DS.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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1N4005GA0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6,2015_DS.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4005GR0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6,2015_DS.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4006GA0 1N4006GA0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6%2C2015_DS.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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1N4006GR0 1N4006GR0 Taiwan Semiconductor Corporation 1N400xG_Rev.O15_May6%2C2015_DS.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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MBR10100CTC0 MBR10100CTC0 Taiwan Semiconductor Corporation MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf Description: DIODE ARR SCHOT 100V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR10150CTC0 MBR10150CTC0 Taiwan Semiconductor Corporation MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR10200CTC0 MBR10200CTC0 Taiwan Semiconductor Corporation MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf Description: DIODE ARR SCHOT 200V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товару немає в наявності
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MBR20100CTC0 MBR20100CTC0 Taiwan Semiconductor Corporation MBR20xxCT_Rev.L13.pdf Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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MBR20150CTC0 MBR20150CTC0 Taiwan Semiconductor Corporation MBR20xxCT_Rev.L13.pdf Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
товару немає в наявності
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MBR20200CTC0 MBR20200CTC0 Taiwan Semiconductor Corporation MBR20xxCT_Rev.L13.pdf Description: DIODE ARR SCHOT 200V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
товару немає в наявності
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MBRF10100CTC0 MBRF10100CTC0 Taiwan Semiconductor Corporation MBRF10xxCT_Rev.L13.pdf Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
товару немає в наявності
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KBU401G T0G KBU401G_H14_523660DS.pdf
KBU401G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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KBU402G T0G KBU401G_H14_523660DS.pdf
KBU402G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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KBU403G T0G KBU401G_H14_523660DS.pdf
KBU403G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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KBU404G T0G KBU401G_H14_523660DS.pdf
KBU404G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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KBU405G T0G KBU401G_H14_523660DS.pdf
KBU405G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBU406G T0G KBU401G_H14_523660DS.pdf
KBU406G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBU407G T0G KBU401G_H14_523660DS.pdf
KBU407G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
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KBU604G T0G KBU60xG_H14_D1409011_DS.pdf
KBU604G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
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KBU605G T0G KBU60xG_H14_D1409011_DS.pdf
KBU605G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBU606G T0G KBU60xG_H14_D1409011_DS.pdf
KBU606G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBU801G T0G KBU80xG_H14_D1409012_DS.pdf
KBU801G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
KBU802G T0G KBU80xG_H14_D1409012_DS.pdf
KBU802G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
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KBU803G T0G KBU80xG_H14_D1409012_DS.pdf
KBU803G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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KBU804G T0G KBU80xG_H14_D1409012_DS.pdf
KBU804G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU805G T0G KBU80xG_H14_D1409012_DS.pdf
KBU805G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU806G T0G KBU80xG_H14_D1409012_DS.pdf
KBU806G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU807G T0G KBU80xG_H14_D1409012_DS.pdf
KBU807G T0G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Tray
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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TLD5S15AH TLD5S10AH SERIES_D2103.pdf
TLD5S15AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S22AH TLD5S10AH SERIES_D2103.pdf
TLD5S22AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S24AH TLD5S10AH SERIES_D2103.pdf
TLD5S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S26AH TLD5S10AH SERIES_D2103.pdf
TLD5S26AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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TLD5S28AH TLD5S10AH SERIES_D2103.pdf
TLD5S28AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S30AH pdf.php?pn=TLD5S30AH
TLD5S30AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S33AH TLD5S10AH%20SERIES_B1809.pdf
TLD5S33AH
Виробник: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLD5S36AH TLD5S10AH SERIES_D2103.pdf
TLD5S36AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
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TLD6S17AH TLD6S10AH%20SERIES_B1809.pdf
TLD6S17AH
Виробник: Taiwan Semiconductor Corporation
Description: 4600W,10V-43V SURFACE MOUNT TRAN
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TLD8S17AH TLD8S10AH SERIES_D2103.pdf
TLD8S17AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 239A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
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SMA4S40AH SMA4S12AH SERIES_C2103.pdf
SMA4S40AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.9VC SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+6.81 грн
28000+6.47 грн
Мінімальне замовлення: 14000
В кошику  од. на суму  грн.
SMA4S56AH SMA4S12AH%20SERIES_B1904.pdf
SMA4S56AH
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 10V - 70V, SMD TVS PG STRU
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMA6S21AH SMA6S12AH SERIES_B1904.pdf
SMA6S21AH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 10V - 70V, SMD TVS PG STRU
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TS19820CS
TS19820CS
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
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TLD5S15AH TLD5S10AH SERIES_D2103.pdf
TLD5S15AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15VWM 24.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 148A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S22AH TLD5S10AH SERIES_D2103.pdf
TLD5S22AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 101A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S24AH TLD5S10AH SERIES_D2103.pdf
TLD5S24AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 24VWM 38.9VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 93A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S26AH TLD5S10AH SERIES_D2103.pdf
TLD5S26AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26VWM 42.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 86A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.9V
Voltage - Clamping (Max) @ Ipp: 42.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TLD5S28AH TLD5S10AH SERIES_D2103.pdf
TLD5S28AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 28VWM 45.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 79A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 45.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TLD5S30AH pdf.php?pn=TLD5S30AH
TLD5S30AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 30VWM 48.4VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 74A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.11 грн
10+183.59 грн
100+146.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLD5S33AH TLD5S10AH%20SERIES_B1809.pdf
TLD5S33AH
Виробник: Taiwan Semiconductor Corporation
Description: 3600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
TLD5S36AH TLD5S10AH SERIES_D2103.pdf
TLD5S36AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 2800W (2.8kW)
Power Line Protection: No
Part Status: Active
на замовлення 1479 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.58 грн
10+371.43 грн
100+304.29 грн
В кошику  од. на суму  грн.
TLD6S17AH TLD6S10AH%20SERIES_B1809.pdf
TLD6S17AH
Виробник: Taiwan Semiconductor Corporation
Description: 4600W,10V-43V SURFACE MOUNT TRAN
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+506.49 грн
10+437.62 грн
100+358.57 грн
В кошику  од. на суму  грн.
TLD8S17AH TLD8S10AH SERIES_D2103.pdf
TLD8S17AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 17VWM 27.6VC DO218AB
Packaging: Cut Tape (CT)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 239A
Voltage - Reverse Standoff (Typ): 17V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.9V
Voltage - Clamping (Max) @ Ipp: 27.6V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Part Status: Active
на замовлення 494 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+549.86 грн
10+475.52 грн
100+389.63 грн
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SMA4S40AH SMA4S12AH SERIES_C2103.pdf
SMA4S40AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 40VWM 64.9VC SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.2A
Voltage - Reverse Standoff (Typ): 40V
Supplier Device Package: SOD-128
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 28000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.18 грн
13+24.35 грн
100+12.27 грн
500+10.21 грн
1000+7.94 грн
2000+7.11 грн
5000+6.84 грн
Мінімальне замовлення: 10
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SMA4S56AH SMA4S12AH%20SERIES_B1904.pdf
SMA4S56AH
Виробник: Taiwan Semiconductor Corporation
Description: 400W, 10V - 70V, SMD TVS PG STRU
на замовлення 7000 шт:
термін постачання 21-31 дні (днів)
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SMA6S21AH SMA6S12AH SERIES_B1904.pdf
SMA6S21AH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 10V - 70V, SMD TVS PG STRU
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TS19820CS
TS19820CS
Виробник: Taiwan Semiconductor Corporation
Description: IC LED DRIVER OFFL PWM 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 19V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 4.5kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 85°C (TA)
Applications: LED Lighting
Internal Switch(s): No
Topology: Buck
Supplier Device Package: 8-SOP
Dimming: PWM
Voltage - Supply (Min): 9.5V
Voltage - Supply (Max): 20V
Part Status: Active
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1N4003GA0 1N400xG_Rev.O15_May6,2015_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4003GR0 1N400xG_Rev.O15_May6,2015_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4004GA0 1N400xG_Rev.O15_May6%2C2015_DS.pdf
1N4004GA0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4004GR0 1N400xG_Rev.O15_May6%2C2015_DS.pdf
1N4004GR0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N4005GA0 1N400xG_Rev.O15_May6,2015_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4005GR0 1N400xG_Rev.O15_May6,2015_DS.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4006GA0 1N400xG_Rev.O15_May6%2C2015_DS.pdf
1N4006GA0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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1N4006GR0 1N400xG_Rev.O15_May6%2C2015_DS.pdf
1N4006GR0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBR10100CTC0 MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf
MBR10100CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR10150CTC0 MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf
MBR10150CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR10200CTC0 MBR10xxCT_Rev.N1512_Dec16%2C2015.pdf
MBR10200CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 10A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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MBR20100CTC0 MBR20xxCT_Rev.L13.pdf
MBR20100CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBR20150CTC0 MBR20xxCT_Rev.L13.pdf
MBR20150CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
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MBR20200CTC0 MBR20xxCT_Rev.L13.pdf
MBR20200CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 20A TO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.23 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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MBRF10100CTC0 MBRF10xxCT_Rev.L13.pdf
MBRF10100CTC0
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 100V ITO220AB
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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