Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (24874) > Сторінка 223 з 415
Фото | Назва | Виробник | Інформація |
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ES1DL | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 10pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 34803 шт: термін постачання 21-31 дні (днів) |
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SMF48AHRVG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMF48AHRVG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
на замовлення 835 шт: термін постачання 21-31 дні (днів) |
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SMF48AH | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 2.6A Voltage - Reverse Standoff (Typ): 48V Supplier Device Package: SOD-123W Unidirectional Channels: 1 Voltage - Breakdown (Min): 53.3V Voltage - Clamping (Max) @ Ipp: 77.4V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1KSMB13AH | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1KSMB13CA | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1KSMB13CAH | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE160CAH | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 2.8A Voltage - Reverse Standoff (Typ): 136V Supplier Device Package: DO-204AC (DO-15) Bidirectional Channels: 1 Voltage - Breakdown (Min): 152V Voltage - Clamping (Max) @ Ipp: 219V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A F2G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20AHF4G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A F3G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A E2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A R2G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A F4G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20A E3G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20AHF2G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20AHE2G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 12.3A Voltage - Reverse Standoff (Typ): 20V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 22.2V Voltage - Clamping (Max) @ Ipp: 32.4V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20AHE3G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PGSMAJ20AHR2G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU15L05H | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Grade: Automotive Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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GBU15L06H | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Grade: Automotive Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU15L05 | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 600 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
на замовлення 1352 шт: термін постачання 21-31 дні (днів) |
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GBU15L06 | Taiwan Semiconductor Corporation |
![]() Packaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Part Status: Active Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 15 A Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
на замовлення 996 шт: термін постачання 21-31 дні (днів) |
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MBR750 C0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBR750HC0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N4763AH | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 91V 1W DO204AL Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 91 V Impedance (Max) (Zzt): 250 Ohms Supplier Device Package: DO-204AL (DO-41) Grade: Automotive Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P6KE400AH | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 1.1A Voltage - Reverse Standoff (Typ): 342V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 380V Voltage - Clamping (Max) @ Ipp: 548V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1SMA5933 | Taiwan Semiconductor Corporation |
![]() Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 22 V Impedance (Max) (Zzt): 17.5 Ohms Supplier Device Package: DO-214AC (SMA) Power - Max: 1.5 W Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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1SMA5933H | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM056NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V Power Dissipation (Max): 78.9W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TSM032NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V |
на замовлення 4220 шт: термін постачання 21-31 дні (днів) |
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM070NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V Power Dissipation (Max): 46.8W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V |
на замовлення 4361 шт: термін постачання 21-31 дні (днів) |
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM019NH04LCR RLG | Taiwan Semiconductor Corporation |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V |
на замовлення 4965 шт: термін постачання 21-31 дні (днів) |
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SRT19 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19 R0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19 A1G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19HA1G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19HA0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19 | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19HR0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRT19H | Taiwan Semiconductor Corporation | Description: DIODE SCHOTTKY 1A 90V TS-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BYG23M | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 65 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BZX55B62 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B39 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B3V0 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B33 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B8V2 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B18 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B22 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B13 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B20 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B2V4 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B3V9 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B4V3 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX55B56 A0G | Taiwan Semiconductor Corporation |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMDJ70A M6G | Taiwan Semiconductor Corporation |
![]() Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 26.5A Voltage - Reverse Standoff (Typ): 70V Supplier Device Package: DO-214AB (SMC) Unidirectional Channels: 1 Voltage - Breakdown (Min): 77.8V Voltage - Clamping (Max) @ Ipp: 113V Power - Peak Pulse: 3000W (3kW) Power Line Protection: No Part Status: Discontinued at Digi-Key |
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В кошику од. на суму грн. |
ES1DL |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 34803 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10+ | 32.97 грн |
16+ | 19.73 грн |
100+ | 12.53 грн |
500+ | 8.81 грн |
1000+ | 7.86 грн |
2000+ | 7.06 грн |
5000+ | 6.09 грн |
SMF48AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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SMF48AHRVG |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
на замовлення 835 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.46 грн |
11+ | 30.08 грн |
100+ | 20.46 грн |
500+ | 14.40 грн |
SMF48AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 48VWM 77.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 48V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 53.3V
Voltage - Clamping (Max) @ Ipp: 77.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
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В кошику
од. на суму грн.
1KSMB13AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
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1KSMB13CA |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
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1KSMB13CAH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
Description: TVS DIODE 11.1VWM 18.2VC DO214AA
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P6KE160CAH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 136VWM 219VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
PGSMAJ20A F2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
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PGSMAJ20AHF4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
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PGSMAJ20A F3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
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PGSMAJ20A E2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
PGSMAJ20A R2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
од. на суму грн.
PGSMAJ20A F4G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
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PGSMAJ20A E3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
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PGSMAJ20AHF2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
PGSMAJ20AHE2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 20VWM 32.4VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 12.3A
Voltage - Reverse Standoff (Typ): 20V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.2V
Voltage - Clamping (Max) @ Ipp: 32.4V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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В кошику
од. на суму грн.
PGSMAJ20AHE3G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
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В кошику
од. на суму грн.
PGSMAJ20AHR2G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 20VWM 32.4VC DO214AC
Description: TVS DIODE 20VWM 32.4VC DO214AC
товару немає в наявності
В кошику
од. на суму грн.
GBU15L05H |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 998 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 380.71 грн |
20+ | 218.64 грн |
100+ | 174.33 грн |
500+ | 135.75 грн |
GBU15L06H |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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В кошику
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GBU15L05 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: BRIDGE RECT 1PHASE 600V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 1352 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 367.37 грн |
20+ | 210.33 грн |
100+ | 167.43 грн |
500+ | 130.17 грн |
1000+ | 122.03 грн |
GBU15L06 |
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Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 15A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 996 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 367.37 грн |
20+ | 210.33 грн |
100+ | 167.43 грн |
500+ | 130.17 грн |
MBR750 C0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
Description: DIODE SCHOTTKY 50V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
MBR750HC0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
Description: DIODE SCHOTTKY 60V 7.5A TO220AC
товару немає в наявності
В кошику
од. на суму грн.
1N4763AH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
Description: DIODE ZENER 91V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 91 V
Impedance (Max) (Zzt): 250 Ohms
Supplier Device Package: DO-204AL (DO-41)
Grade: Automotive
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 69.2 V
Qualification: AEC-Q101
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В кошику
од. на суму грн.
P6KE400AH |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: TVS DIODE 342VWM 548VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.1A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
1SMA5933 |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
Description: DIODE ZENER 22V 1.5W DO214AC
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 17.5 Ohms
Supplier Device Package: DO-214AC (SMA)
Power - Max: 1.5 W
Current - Reverse Leakage @ Vr: 500 nA @ 16.7 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7500+ | 5.83 грн |
1SMA5933H |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 1.5W DO214AC
Description: DIODE ZENER 22V 1.5W DO214AC
товару немає в наявності
В кошику
од. на суму грн.
TSM056NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 33.39 грн |
TSM056NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 27A, 10V
Power Dissipation (Max): 78.9W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 25 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 129.52 грн |
10+ | 79.75 грн |
100+ | 53.70 грн |
500+ | 39.91 грн |
1000+ | 35.44 грн |
2000+ | 33.71 грн |
TSM032NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 46.58 грн |
TSM032NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
Description: 40V, 81A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3007 pF @ 25 V
на замовлення 4220 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 165.63 грн |
10+ | 102.50 грн |
100+ | 69.94 грн |
500+ | 52.56 грн |
1000+ | 48.35 грн |
TSM070NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
TSM070NH04LCR RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
Description: 40V, 54A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 27A, 10V
Power Dissipation (Max): 46.8W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1446 pF @ 25 V
на замовлення 4361 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 73.79 грн |
10+ | 58.20 грн |
100+ | 45.35 грн |
500+ | 33.72 грн |
1000+ | 30.78 грн |
TSM019NH04LCR RLG |
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Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
TSM019NH04LCR RLG |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
Description: 40V, 100A, SINGLE N-CHANNEL POWE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PDFNU (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6282 pF @ 25 V
на замовлення 4965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 233.92 грн |
10+ | 163.65 грн |
100+ | 114.57 грн |
500+ | 87.87 грн |
1000+ | 81.56 грн |
SRT19 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19 R0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19 A1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19HA1G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19HA0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19 |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19HR0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A TS-1
Description: DIODE SCHOTTKY 90V 1A TS-1
товару немає в наявності
В кошику
од. на суму грн.
SRT19H |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 1A 90V TS-1
Description: DIODE SCHOTTKY 1A 90V TS-1
товару немає в наявності
В кошику
од. на суму грн.
BYG23M |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE STD 1000V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 65 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7500+ | 4.31 грн |
BZX55B62 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 62V 500MW DO35
Description: DIODE ZENER 62V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B39 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Description: DIODE ZENER 39V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B3V0 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3V 500MW DO35
Description: DIODE ZENER 3V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B33 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 33V 500MW DO35
Description: DIODE ZENER 33V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B8V2 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 8.2V 500MW DO35
Description: DIODE ZENER 8.2V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B18 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 18V 500MW DO35
Description: DIODE ZENER 18V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B22 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW DO35
Description: DIODE ZENER 22V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B13 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 500MW DO35
Description: DIODE ZENER 13V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B20 A0G |
![]() |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Description: DIODE ZENER 20V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B2V4 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Description: DIODE ZENER 2.4V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B3V9 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Description: DIODE ZENER 3.9V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B4V3 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 500MW DO35
Description: DIODE ZENER 4.3V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
BZX55B56 A0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 500MW DO35
Description: DIODE ZENER 56V 500MW DO35
товару немає в наявності
В кошику
од. на суму грн.
SMDJ70A M6G |
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Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Description: TVS DIODE 70VWM 113VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 26.5A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику
од. на суму грн.