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BZT52C75-G BZT52C75-G Taiwan Semiconductor Corporation BZT52C2V4-G%20SERIES_C2007.pdf Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
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SS14M SS14M Taiwan Semiconductor Corporation SS13M SERIES_O2103.pdf Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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TSM090N03ECP TSM090N03ECP Taiwan Semiconductor Corporation Description: 30V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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TSM090N03CP TSM090N03CP Taiwan Semiconductor Corporation Description: 30V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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1N5222B A0G 1N5222B A0G Taiwan Semiconductor Corporation 1N5221B%20SERIES_G1804.pdf Description: DIODE ZENER 2.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BZV55B10 L0G BZV55B10 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZV55B10 L1G BZV55B10 L1G Taiwan Semiconductor Corporation BZV55B2V4%20SERIES_G2301.pdf Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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GBU1004H GBU1004H Taiwan Semiconductor Corporation GBU1001 SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+164.95 грн
10+101.54 грн
100+68.57 грн
500+51.10 грн
1000+46.84 грн
Мінімальне замовлення: 3
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GBU1007H GBU1007H Taiwan Semiconductor Corporation GBU1001 SERIES_M2103.pdf Description: 10A, 1000V, STANDARD BRIDGE RECT
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+132.13 грн
10+86.24 грн
100+60.72 грн
500+46.31 грн
1000+42.82 грн
Мінімальне замовлення: 3
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S1MLH S1MLH Taiwan Semiconductor Corporation S1ALH SERIES_B2108.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
10000+5.44 грн
30000+5.14 грн
50000+4.26 грн
Мінімальне замовлення: 10000
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S1MLH S1MLH Taiwan Semiconductor Corporation S1ALH SERIES_B2108.pdf Description: DIODE GEN PURP 1KV 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 58487 шт:
термін постачання 21-31 дні (днів)
10+36.27 грн
14+24.70 грн
100+12.45 грн
500+9.53 грн
1000+7.07 грн
2000+5.95 грн
5000+5.59 грн
Мінімальне замовлення: 10
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S1MFS S1MFS Taiwan Semiconductor Corporation S1DFS SERIES_C2103.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
14000+3.47 грн
Мінімальне замовлення: 14000
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S1ML RVG S1ML RVG Taiwan Semiconductor Corporation S1AL%20SERIES_Q2108.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1MFSH S1MFSH Taiwan Semiconductor Corporation S1DFSH SERIES_B2306.pdf Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
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BZX55C39 BZX55C39 Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 28 V
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BZX55C39 A0G BZX55C39 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_D1610.pdf Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 28 V
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1V5KE30CA 1V5KE30CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 25.6VWM 41.4V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE27A 1V5KE27A Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 23.1VWM 37.5V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE27H 1.5KE27H Taiwan Semiconductor Corporation Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE27 1.5KE27 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE27C 1.5KE27C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C10 RFG BZX84C10 RFG Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 10V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.48 грн
Мінімальне замовлення: 3000
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BZX84C10 RFG BZX84C10 RFG Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 10V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
20+17.27 грн
34+10.06 грн
100+6.26 грн
500+4.30 грн
1000+3.79 грн
Мінімальне замовлення: 20
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MBR40200PT MBR40200PT Taiwan Semiconductor Corporation MBR4035PT SERIES_I2103.pdf Description: DIODE ARR SCHOT 200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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RS1ML RS1ML Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 1000V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+4.66 грн
Мінімальне замовлення: 10000
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RS1ML RS1ML Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 1000V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 16458 шт:
термін постачання 21-31 дні (днів)
13+27.64 грн
23+14.89 грн
100+8.89 грн
500+6.76 грн
1000+5.80 грн
2000+5.36 грн
5000+4.59 грн
Мінімальне замовлення: 13
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1.5KE400H 1.5KE400H Taiwan Semiconductor Corporation Description: TVS DIODE 324VWM 574VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 324V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 360V
Voltage - Clamping (Max) @ Ipp: 574V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZV55B7V5 L0G BZV55B7V5 L0G Taiwan Semiconductor Corporation BZV55B2V4 SERIES_G2301.pdf Description: DIODE ZENER 7.5V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
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1V5KE150A 1V5KE150A Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE150A 1V5KE150A Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE150H 1.5KE150H Taiwan Semiconductor Corporation Description: 1500W, 150V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE150 1.5KE150 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 150V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1V5KE150CA 1V5KE150CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE150CA 1V5KE150CA Taiwan Semiconductor Corporation 1V5KE SERIES_D2112.pdf Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE150CH 1.5KE150CH Taiwan Semiconductor Corporation Description: 1500W, 150V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE150C 1.5KE150C Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: 1500W, 150V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZV55C2V7 L0G BZV55C2V7 L0G Taiwan Semiconductor Corporation BZV55C2V4 SERIES_H2301.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZV55C2V7 L1G BZV55C2V7 L1G Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 2.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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SS120ALH SS120ALH Taiwan Semiconductor Corporation SS14ALH SERIES_B2103.pdf Description: 1A, 200V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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6A60GH A0G 6A60GH A0G Taiwan Semiconductor Corporation 6A05G%20SERIES_F2104.pdf Description: DIODE STANDARD 600V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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BC807-40W RFG BC807-40W RFG Taiwan Semiconductor Corporation BC807-16W Series_D2102.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.18 грн
Мінімальне замовлення: 3000
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BC807-40W RFG BC807-40W RFG Taiwan Semiconductor Corporation BC807-16W Series_D2102.pdf Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
22+16.41 грн
36+9.31 грн
100+5.75 грн
500+3.94 грн
1000+3.47 грн
Мінімальне замовлення: 22
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HER206G HER206G Taiwan Semiconductor Corporation HER201G SERIES_G2105.pdf Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3376 шт:
термін постачання 21-31 дні (днів)
9+38.86 грн
15+23.04 грн
100+14.60 грн
500+10.28 грн
1000+9.17 грн
Мінімальне замовлення: 9
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TSM2NB60CP ROG TSM2NB60CP ROG Taiwan Semiconductor Corporation TSM2NB60CP_A2208.pdf Description: MOSFET N-CHANNEL 600V 2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+25.66 грн
Мінімальне замовлення: 2500
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TSM2NB60CP ROG TSM2NB60CP ROG Taiwan Semiconductor Corporation TSM2NB60CP_A2208.pdf Description: MOSFET N-CHANNEL 600V 2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V
на замовлення 4922 шт:
термін постачання 21-31 дні (днів)
5+83.77 грн
10+53.89 грн
100+37.32 грн
500+28.01 грн
1000+25.71 грн
Мінімальне замовлення: 5
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1.5KE36H 1.5KE36H Taiwan Semiconductor Corporation Description: TVS DIODE 29.1VWM 52VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE36 1.5KE36 Taiwan Semiconductor Corporation 1.5KE SERIES_O2104.pdf Description: TVS DIODE 29.1VWM 52VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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HS1KLW HS1KLW Taiwan Semiconductor Corporation HS1DLW SERIES_C2103.pdf Description: DIODE STANDARD 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)
15+23.32 грн
25+13.64 грн
100+8.51 грн
500+5.90 грн
1000+5.22 грн
2000+4.65 грн
Мінімальне замовлення: 15
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SS14LW SS14LW Taiwan Semiconductor Corporation SS14LW SERIES_D2305.pdf Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
10000+3.03 грн
20000+2.82 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS14LW SS14LW Taiwan Semiconductor Corporation SS14LW SERIES_D2305.pdf Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 21833 шт:
термін постачання 21-31 дні (днів)
15+23.32 грн
26+13.14 грн
100+8.19 грн
500+5.68 грн
1000+4.89 грн
2000+4.48 грн
5000+3.81 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SS14LSH SS14LSH Taiwan Semiconductor Corporation SS12LSH SERIES_B2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+4.11 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS14LSH SS14LSH Taiwan Semiconductor Corporation SS12LSH SERIES_B2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
на замовлення 18600 шт:
термін постачання 21-31 дні (днів)
15+23.32 грн
25+13.80 грн
100+8.63 грн
500+5.99 грн
1000+5.30 грн
2000+4.73 грн
5000+4.03 грн
Мінімальне замовлення: 15
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BZD27C56PW BZD27C56PW Taiwan Semiconductor Corporation BZD27C11PW%20SERIES_D2203.pdf Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PW BZD27C56PW Taiwan Semiconductor Corporation BZD27C11PW%20SERIES_D2203.pdf Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PWH BZD27C56PWH Taiwan Semiconductor Corporation BZD27C11PW%20SERIES_D2203.pdf Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PWH BZD27C56PWH Taiwan Semiconductor Corporation BZD27C11PW%20SERIES_D2203.pdf Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56P BZD27C56P Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PH BZD27C56PH Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C51PH BZD27C51PH Taiwan Semiconductor Corporation pdf.php?pn=BZD27C51PH Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZD27C56P RUG BZD27C56P RUG Taiwan Semiconductor Corporation BZD27C%20SERIES_AB2103.pdf Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZT52C75-G BZT52C2V4-G%20SERIES_C2007.pdf
BZT52C75-G
Виробник: Taiwan Semiconductor Corporation
Description: SOD-123, 350MW, 5%, SMALL SIGNAL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 255 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 52.5 V
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SS14M SS13M SERIES_O2103.pdf
SS14M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A MICRO SMA
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Leads
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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TSM090N03ECP
TSM090N03ECP
Виробник: Taiwan Semiconductor Corporation
Description: 30V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 25 V
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TSM090N03CP
TSM090N03CP
Виробник: Taiwan Semiconductor Corporation
Description: 30V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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1N5222B A0G 1N5221B%20SERIES_G1804.pdf
1N5222B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 2.5 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 µA @ 1 V
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BZV55B10 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B10 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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BZV55B10 L1G BZV55B2V4%20SERIES_G2301.pdf
BZV55B10 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 7.5 V
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GBU1004H GBU1001 SERIES_M2103.pdf
GBU1004H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+164.95 грн
10+101.54 грн
100+68.57 грн
500+51.10 грн
1000+46.84 грн
Мінімальне замовлення: 3
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GBU1007H GBU1001 SERIES_M2103.pdf
GBU1007H
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 1000V, STANDARD BRIDGE RECT
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.13 грн
10+86.24 грн
100+60.72 грн
500+46.31 грн
1000+42.82 грн
Мінімальне замовлення: 3
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S1MLH S1ALH SERIES_B2108.pdf
S1MLH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+5.44 грн
30000+5.14 грн
50000+4.26 грн
Мінімальне замовлення: 10000
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S1MLH S1ALH SERIES_B2108.pdf
S1MLH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1KV 1A SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 58487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+36.27 грн
14+24.70 грн
100+12.45 грн
500+9.53 грн
1000+7.07 грн
2000+5.95 грн
5000+5.59 грн
Мінімальне замовлення: 10
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S1MFS S1DFS SERIES_C2103.pdf
S1MFS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14000+3.47 грн
Мінімальне замовлення: 14000
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S1ML RVG S1AL%20SERIES_Q2108.pdf
S1ML RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8 µs
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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S1MFSH S1DFSH SERIES_B2306.pdf
S1MFSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
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BZX55C39 BZX55C2V0%20SERIES_E2301.pdf
BZX55C39
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 28 V
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BZX55C39 A0G BZX55C2V0%20SERIES_D1610.pdf
BZX55C39 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 28 V
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1V5KE30CA 1V5KE SERIES_D2112.pdf
1V5KE30CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE27A 1V5KE SERIES_D2112.pdf
1V5KE27A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 23.1VWM 37.5V DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE27H
1.5KE27H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE27 1.5KE SERIES_O2104.pdf
1.5KE27
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE27C 1.5KE SERIES_O2104.pdf
1.5KE27C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 21.8VWM 39.1VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 21.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.3V
Voltage - Clamping (Max) @ Ipp: 39.1V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZX84C10 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C10 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.48 грн
Мінімальне замовлення: 3000
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BZX84C10 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C10 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 5975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+17.27 грн
34+10.06 грн
100+6.26 грн
500+4.30 грн
1000+3.79 грн
Мінімальне замовлення: 20
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MBR40200PT MBR4035PT SERIES_I2103.pdf
MBR40200PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.01 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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RS1ML RS1AL%20SERIES_N2103.pdf
RS1ML
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+4.66 грн
Мінімальне замовлення: 10000
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RS1ML RS1AL%20SERIES_N2103.pdf
RS1ML
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 1000V 800MA SUB SMA
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 16458 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+27.64 грн
23+14.89 грн
100+8.89 грн
500+6.76 грн
1000+5.80 грн
2000+5.36 грн
5000+4.59 грн
Мінімальне замовлення: 13
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1.5KE400H
1.5KE400H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 324VWM 574VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 324V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 360V
Voltage - Clamping (Max) @ Ipp: 574V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZV55B7V5 L0G BZV55B2V4 SERIES_G2301.pdf
BZV55B7V5 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW MINI MELF
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
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1V5KE150A 1V5KE SERIES_D2112.pdf
1V5KE150A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE150A 1V5KE SERIES_D2112.pdf
1V5KE150A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Unidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE150H
1.5KE150H
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 150V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE150 1.5KE SERIES_O2104.pdf
1.5KE150
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 150V, 10%, UNIDIRECTIONAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1V5KE150CA 1V5KE SERIES_D2112.pdf
1V5KE150CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1V5KE150CA 1V5KE SERIES_D2112.pdf
1V5KE150CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 128VWM 207VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.2A
Voltage - Reverse Standoff (Typ): 128V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 143V
Voltage - Clamping (Max) @ Ipp: 207V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5KE150CH
1.5KE150CH
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 150V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE150C 1.5KE SERIES_O2104.pdf
1.5KE150C
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 150V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.3A
Voltage - Reverse Standoff (Typ): 121V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 135V
Voltage - Clamping (Max) @ Ipp: 215V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZV55C2V7 L0G BZV55C2V4 SERIES_H2301.pdf
BZV55C2V7 L0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZV55C2V7 L1G BZV55C2V4%20SERIES_H2301.pdf
BZV55C2V7 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 500MW MINI MELF
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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SS120ALH SS14ALH SERIES_B2103.pdf
SS120ALH
Виробник: Taiwan Semiconductor Corporation
Description: 1A, 200V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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6A60GH A0G 6A05G%20SERIES_F2104.pdf
6A60GH A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 6A R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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BC807-40W RFG BC807-16W Series_D2102.pdf
BC807-40W RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.18 грн
Мінімальне замовлення: 3000
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BC807-40W RFG BC807-16W Series_D2102.pdf
BC807-40W RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 80MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 5900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+16.41 грн
36+9.31 грн
100+5.75 грн
500+3.94 грн
1000+3.47 грн
Мінімальне замовлення: 22
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HER206G HER201G SERIES_G2105.pdf
HER206G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3376 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+38.86 грн
15+23.04 грн
100+14.60 грн
500+10.28 грн
1000+9.17 грн
Мінімальне замовлення: 9
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TSM2NB60CP ROG TSM2NB60CP_A2208.pdf
TSM2NB60CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 2A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.66 грн
Мінімальне замовлення: 2500
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TSM2NB60CP ROG TSM2NB60CP_A2208.pdf
TSM2NB60CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 600V 2A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 4.4Ohm @ 1A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 25 V
на замовлення 4922 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+83.77 грн
10+53.89 грн
100+37.32 грн
500+28.01 грн
1000+25.71 грн
Мінімальне замовлення: 5
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1.5KE36H
1.5KE36H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 29.1VWM 52VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE36 1.5KE SERIES_O2104.pdf
1.5KE36
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 29.1VWM 52VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 30A
Voltage - Reverse Standoff (Typ): 29.1V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 32.4V
Voltage - Clamping (Max) @ Ipp: 52V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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HS1KLW HS1DLW SERIES_C2103.pdf
HS1KLW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
на замовлення 3664 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.32 грн
25+13.64 грн
100+8.51 грн
500+5.90 грн
1000+5.22 грн
2000+4.65 грн
Мінімальне замовлення: 15
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SS14LW SS14LW SERIES_D2305.pdf
SS14LW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+3.03 грн
20000+2.82 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS14LW SS14LW SERIES_D2305.pdf
SS14LW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
на замовлення 21833 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.32 грн
26+13.14 грн
100+8.19 грн
500+5.68 грн
1000+4.89 грн
2000+4.48 грн
5000+3.81 грн
Мінімальне замовлення: 15
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SS14LSH SS12LSH SERIES_B2212.pdf
SS14LSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+4.11 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
SS14LSH SS12LSH SERIES_B2212.pdf
SS14LSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
на замовлення 18600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.32 грн
25+13.80 грн
100+8.63 грн
500+5.99 грн
1000+5.30 грн
2000+4.73 грн
5000+4.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BZD27C56PW BZD27C11PW%20SERIES_D2203.pdf
BZD27C56PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PW BZD27C11PW%20SERIES_D2203.pdf
BZD27C56PW
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
товару немає в наявності
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BZD27C56PWH BZD27C11PW%20SERIES_D2203.pdf
BZD27C56PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PWH BZD27C11PW%20SERIES_D2203.pdf
BZD27C56PWH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SOD123W
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123W
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
товару немає в наявності
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BZD27C56P BZD27C%20SERIES_AB2103.pdf
BZD27C56P
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C56PH BZD27C%20SERIES_AB2103.pdf
BZD27C56PH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
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BZD27C51PH pdf.php?pn=BZD27C51PH
BZD27C51PH
Виробник: Taiwan Semiconductor Corporation
Description: SUB SMA, 1000MW, 6%, ZENER DIODE
Tolerance: ±5.88%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 39 V
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BZD27C56P RUG BZD27C%20SERIES_AB2103.pdf
BZD27C56P RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 56V 1W SUB SMA
Tolerance: ±7.14%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: Sub SMA
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 43 V
товару немає в наявності
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