Продукція > TAIWAN SEMICONDUCTOR CORPORATION > Всі товари виробника TAIWAN SEMICONDUCTOR CORPORATION (24892) > Сторінка 303 з 415
| Фото | Назва | Виробник | Інформація |
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1N4740G R0G | Taiwan Semiconductor Corporation |
 Description: DIODE ZENER 10V 1W DO204ALPackaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TA) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
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SS24ALH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A THIN SMA Packaging: Tape & Reel (TR) Package / Case: DO-221AC, SMA Flat Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 124pF @ 4V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: Thin SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A Current - Reverse Leakage @ Vr: 200 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
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SS24L | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SUB SMA Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V |
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SS24LH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 2A SUB SMA Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 125°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A Current - Reverse Leakage @ Vr: 400 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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1.5KE33H | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5KE33 | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5KE33CH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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1.5KE33C | Taiwan Semiconductor Corporation |
Description: TVS DIODE 26.8VWM 47.7VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 33A Voltage - Reverse Standoff (Typ): 26.8V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 29.7V Voltage - Clamping (Max) @ Ipp: 47.7V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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| TSM230N06CP | Taiwan Semiconductor Corporation |
Description: 60V, 50A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V Power Dissipation (Max): 53W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V |
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BZX79C5V1 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.1V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 60 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
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| BZX79B10 | Taiwan Semiconductor Corporation |
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
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BZX79B10 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 10V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 10 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 200 nA @ 7 V |
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MBRF30200CT-Y | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 200V ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V |
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MBRF30200CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 200V ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: ITO-220AB Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A Current - Reverse Leakage @ Vr: 200 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
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BYG21M | Taiwan Semiconductor Corporation |
Description: DIODE AVALANCHE 1.5A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 120 ns Technology: Avalanche Capacitance @ Vr, F: 13pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
на замовлення 9586 шт: термін постачання 21-31 дні (днів) |
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MBR30L60CTH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 30A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-220AB Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A Current - Reverse Leakage @ Vr: 480 µA @ 60 V Qualification: AEC-Q101 |
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MBRAD15100DH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 100V THINDPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
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MBRAD15100DH | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTTKY 100V THINDPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 15A Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 4450 шт: термін постачання 21-31 дні (днів) |
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1N5244B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 14V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 14 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 10 V |
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P6SMB30CAH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 25.6VWM 41.4V DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 15A Voltage - Reverse Standoff (Typ): 25.6V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 28.5V Voltage - Clamping (Max) @ Ipp: 41.4V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6037 шт: термін постачання 21-31 дні (днів) |
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P6KE110AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 94VWM 152VC DO204AC Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 4.1A Voltage - Reverse Standoff (Typ): 94V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 105V Voltage - Clamping (Max) @ Ipp: 152V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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P6KE110H | Taiwan Semiconductor Corporation |
Description: 600W, 110V, 10%, UNIDIRECTIONAL, Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 3.9A Voltage - Reverse Standoff (Typ): 89.2V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 99V Voltage - Clamping (Max) @ Ipp: 158V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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P6KE110 | Taiwan Semiconductor Corporation |
Description: 600W, 110V, 10%, UNIDIRECTIONAL, Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 3.9A Voltage - Reverse Standoff (Typ): 89.2V Supplier Device Package: DO-204AC (DO-15) Unidirectional Channels: 1 Voltage - Breakdown (Min): 99V Voltage - Clamping (Max) @ Ipp: 158V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||
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MBRS2060CT-Y | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRS2060CT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRS2060 | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SRS2060H | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 60V 20A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A Current - Reverse Leakage @ Vr: 500 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUR120S | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A DO214AA Packaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 50 µA @ 200 V |
на замовлення 5035 шт: термін постачання 21-31 дні (днів) |
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1N5245B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 500MW DO35 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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В кошику од. на суму грн. | ||||||||||||||
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1N5245B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 15V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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В кошику од. на суму грн. | ||||||||||||||
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1N5232B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 5.6V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS16LS | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SS16LS | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SOD123HE Packaging: Cut Tape (CT) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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SS16LWH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SOD123W Packaging: Tape & Reel (TR) Package / Case: SOD-123W Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 100 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
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В кошику од. на суму грн. | ||||||||||||||
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SS16LSH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SOD123HE Packaging: Tape & Reel (TR) Package / Case: SOD-123H Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 80pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS16LH | Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 60V 1A SUB SMA Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 400 µA @ 60 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5236B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5242B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW DO35 Tolerance: ±5% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1N5242B A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW DO35 Tolerance: ±5% Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 100°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 30 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 9 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZX79C12 A0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 12V 500MW DO35 Packaging: Tape & Box (TB) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 25 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC817-40W RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.5A SOT-323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BC817-40W RFG | Taiwan Semiconductor Corporation |
Description: TRANS NPN 45V 0.5A SOT-323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
на замовлення 5810 шт: термін постачання 21-31 дні (днів) |
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MBR3045PT | Taiwan Semiconductor Corporation |
Description: DIODE ARR SCHOTT 45V 30A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A Current - Reverse Leakage @ Vr: 1 mA @ 45 V |
на замовлення 981 шт: термін постачання 21-31 дні (днів) |
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P4KE51AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 43.6VWM 70.1V DO204AL Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Current - Peak Pulse (10/1000µs): 6A Voltage - Reverse Standoff (Typ): 43.6V Supplier Device Package: DO-204AL (DO-41) Unidirectional Channels: 1 Voltage - Breakdown (Min): 48.5V Voltage - Clamping (Max) @ Ipp: 70.1V Power - Peak Pulse: 400W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1V5KE10CA | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8.55VWM 14.5VC DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 8.55V Supplier Device Package: DO-201AD Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1V5KE10CA | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8.55VWM 14.5VC DO201AD Packaging: Cut Tape (CT) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 103A Voltage - Reverse Standoff (Typ): 8.55V Supplier Device Package: DO-201AD Bidirectional Channels: 1 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMA39A | Taiwan Semiconductor Corporation |
Description: TVS DIODE 33.3VWM 53.9V DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 7.7A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 400W Power Line Protection: No |
на замовлення 6500 шт: термін постачання 21-31 дні (днів) |
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P4SMA10AH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 8.55VWM 14.5VC DO214AC Packaging: Tape & Reel (TR) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: Automotive Current - Peak Pulse (10/1000µs): 29A Voltage - Reverse Standoff (Typ): 8.55V Supplier Device Package: DO-214AC (SMA) Unidirectional Channels: 1 Voltage - Breakdown (Min): 9.5V Voltage - Clamping (Max) @ Ipp: 14.5V Power - Peak Pulse: 400W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BC857C RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.1A SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BC857C RFG | Taiwan Semiconductor Corporation |
Description: TRANS PNP 45V 0.1A SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-23 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 200 mW |
на замовлення 8725 шт: термін постачання 21-31 дні (днів) |
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TSM320N03CX | Taiwan Semiconductor Corporation |
Description: 30V, 5.5A, SINGLE N-CHANNEL POWE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta), 1.8W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5KE200H | Taiwan Semiconductor Corporation |
Description: TVS DIODE 162VWM 287VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5KE200 | Taiwan Semiconductor Corporation |
Description: TVS DIODE 162VWM 287VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-201 Unidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5KE200CH | Taiwan Semiconductor Corporation |
Description: TVS DIODE 162VWM 287VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1.5KE200C | Taiwan Semiconductor Corporation |
Description: TVS DIODE 162VWM 287VC DO201 Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 5.4A Voltage - Reverse Standoff (Typ): 162V Supplier Device Package: DO-201 Bidirectional Channels: 1 Voltage - Breakdown (Min): 180V Voltage - Clamping (Max) @ Ipp: 287V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MUR360S | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 600V 3A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
на замовлення 5717 шт: термін постачання 21-31 дні (днів) |
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ES1DV | Taiwan Semiconductor Corporation |
Description: DIODE STANDARD 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15 ns Technology: Standard Capacitance @ Vr, F: 17pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
на замовлення 14970 шт: термін постачання 21-31 дні (днів) |
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BZX85C13 R0G | Taiwan Semiconductor Corporation |
Description: DIODE ZENER 13V 1.3W DO204AL Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1.3 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA Current - Reverse Leakage @ Vr: 500 nA @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM1NB60CW | Taiwan Semiconductor Corporation |
Description: 600V, 1A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-223 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM1NB60CH | Taiwan Semiconductor Corporation |
Description: 600V, 1A, SINGLE N-CHANNEL POWER Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| 1N4740G R0G |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 10V 1W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
товару немає в наявності
В кошику
од. на суму грн.
| SS24ALH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 124pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A THIN SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 124pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: Thin SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 2 A
Current - Reverse Leakage @ Vr: 200 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SS24L |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
товару немає в наявності
В кошику
од. на суму грн.
| SS24LH |
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Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 7.97 грн |
| 1.5KE33H |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE33 |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE33CH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE33C |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 26.8VWM 47.7VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 33A
Voltage - Reverse Standoff (Typ): 26.8V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.7V
Voltage - Clamping (Max) @ Ipp: 47.7V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| TSM230N06CP |
Виробник: Taiwan Semiconductor Corporation
Description: 60V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
Description: 60V, 50A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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| BZX79C5V1 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
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| BZX79B10 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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| BZX79B10 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 10V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
Description: DIODE ZENER 10V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
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| MBRF30200CT-Y |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 30 A
Current - Reverse Leakage @ Vr: 500 µA @ 200 V
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| MBRF30200CTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 200V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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| BYG21M |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE AVALANCHE 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE AVALANCHE 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Avalanche
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
на замовлення 9586 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 30.61 грн |
| 15+ | 21.24 грн |
| 100+ | 10.89 грн |
| 500+ | 8.30 грн |
| 1000+ | 6.76 грн |
| 2000+ | 6.66 грн |
| MBR30L60CTH |
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 15 A
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Qualification: AEC-Q101
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| MBRAD15100DH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 100V THINDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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| MBRAD15100DH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTTKY 100V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTTKY 100V THINDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 60.44 грн |
| 10+ | 49.81 грн |
| 100+ | 35.97 грн |
| 500+ | 26.25 грн |
| 1000+ | 23.17 грн |
| 2000+ | 21.81 грн |
| 1N5244B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Description: DIODE ZENER 14V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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| P6SMB30CAH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 25.6VWM 41.4V DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 15A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6037 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 38.46 грн |
| 12+ | 25.70 грн |
| 100+ | 16.68 грн |
| 500+ | 13.20 грн |
| 1000+ | 10.66 грн |
| P6KE110AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 94VWM 152VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 94VWM 152VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 94V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 105V
Voltage - Clamping (Max) @ Ipp: 152V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6KE110H |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 110V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W, 110V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| P6KE110 |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 110V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: 600W, 110V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3.9A
Voltage - Reverse Standoff (Typ): 89.2V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 99V
Voltage - Clamping (Max) @ Ipp: 158V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| MBRS2060CT-Y |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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| MBRS2060CT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
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| SRS2060 |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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| SRS2060H |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ARR SCHOTT 60V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| MUR120S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
на замовлення 5035 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.55 грн |
| 20+ | 15.19 грн |
| 100+ | 13.52 грн |
| 500+ | 9.20 грн |
| 1000+ | 7.52 грн |
| 1N5245B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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| 1N5245B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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| 1N5232B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
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| SS16LS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.66 грн |
| 20000+ | 2.73 грн |
| SS16LS |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 20.41 грн |
| 25+ | 12.40 грн |
| 100+ | 7.73 грн |
| 500+ | 5.35 грн |
| 1000+ | 4.74 грн |
| 2000+ | 4.22 грн |
| 5000+ | 3.59 грн |
| SS16LWH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| SS16LSH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| SS16LH |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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| 1N5236B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
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| 1N5242B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
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| 1N5242B A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
Description: DIODE ZENER 12V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9 V
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| BZX79C12 A0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
Description: DIODE ZENER 12V 500MW DO35
Packaging: Tape & Box (TB)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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| BC817-40W RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.99 грн |
| BC817-40W RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS NPN 45V 0.5A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 5810 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.91 грн |
| 35+ | 8.77 грн |
| 100+ | 5.42 грн |
| 500+ | 3.71 грн |
| 1000+ | 3.27 грн |
| MBR3045PT |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Description: DIODE ARR SCHOTT 45V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
на замовлення 981 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.67 грн |
| 50+ | 102.15 грн |
| 100+ | 97.82 грн |
| 500+ | 74.39 грн |
| P4KE51AH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 43.6VWM 70.1V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 43.6VWM 70.1V DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6A
Voltage - Reverse Standoff (Typ): 43.6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 48.5V
Voltage - Clamping (Max) @ Ipp: 70.1V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1V5KE10CA |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 8.55VWM 14.5VC DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| 1V5KE10CA |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 8.55VWM 14.5VC DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 103A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-201AD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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| P4SMA39A |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 33.3VWM 53.9V DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 7.7A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 6500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.90 грн |
| 18+ | 17.46 грн |
| 100+ | 6.71 грн |
| 500+ | 5.74 грн |
| 1000+ | 5.40 грн |
| P4SMA10AH |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Description: TVS DIODE 8.55VWM 14.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 29A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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| BC857C RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 2.22 грн |
| 6000+ | 1.90 грн |
| BC857C RFG |
|
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
Description: TRANS PNP 45V 0.1A SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 200 mW
на замовлення 8725 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 10.99 грн |
| 46+ | 6.65 грн |
| 100+ | 4.08 грн |
| 500+ | 2.78 грн |
| 1000+ | 2.44 грн |
| TSM320N03CX |
Виробник: Taiwan Semiconductor Corporation
Description: 30V, 5.5A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
Description: 30V, 5.5A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
Power Dissipation (Max): 1W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 792 pF @ 15 V
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| 1.5KE200H |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE200 |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Unidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE200CH |
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| 1.5KE200C |
|
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 162VWM 287VC DO201
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.4A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-201
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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| MUR360S |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE STANDARD 600V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
на замовлення 5717 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 45.53 грн |
| 10+ | 31.29 грн |
| 100+ | 22.01 грн |
| 500+ | 15.77 грн |
| 1000+ | 14.19 грн |
| ES1DV |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE STANDARD 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 14970 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 34.54 грн |
| 15+ | 20.64 грн |
| 100+ | 13.11 грн |
| 500+ | 9.23 грн |
| 1000+ | 8.24 грн |
| 2000+ | 7.41 грн |
| BZX85C13 R0G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
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| TSM1NB60CW |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-223
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
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| TSM1NB60CH |
|
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
Description: 600V, 1A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 138 pF @ 25 V
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