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M3Z12VC RRG M3Z12VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.36 грн
Мінімальне замовлення: 3000
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M3Z12VC RRG M3Z12VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
37+8.75 грн
52+5.98 грн
100+3.98 грн
500+2.84 грн
1000+2.53 грн
Мінімальне замовлення: 37
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M3Z16VC RRG M3Z16VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M3Z16VC RRG M3Z16VC RRG Taiwan Semiconductor Corporation M3Z2V0C SERIES_B2008.pdf Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
37+8.75 грн
52+5.98 грн
100+3.98 грн
500+2.84 грн
1000+2.53 грн
Мінімальне замовлення: 37
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UDZS16B RRG UDZS16B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.63 грн
Мінімальне замовлення: 3000
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UDZS16B RRG UDZS16B RRG Taiwan Semiconductor Corporation UDZS3V6B SERIES_H2212.pdf Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
на замовлення 5979 шт:
термін постачання 21-31 дні (днів)
31+10.35 грн
47+6.59 грн
100+4.42 грн
500+3.15 грн
1000+2.81 грн
Мінімальне замовлення: 31
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BZT52B12S R9G BZT52B12S R9G Taiwan Semiconductor Corporation BZT52B2V4S SERIES_H2212.pdf Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12S R9G BZT52B12S R9G Taiwan Semiconductor Corporation BZT52B2V4S SERIES_H2212.pdf Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
товару немає в наявності
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AZ23C16 RFG AZ23C16 RFG Taiwan Semiconductor Corporation AZ23C2V7 SERIES_D2001.pdf Description: DIODE ZENER ARRAY 16V SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+4.59 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AZ23C16 RFG AZ23C16 RFG Taiwan Semiconductor Corporation AZ23C2V7 SERIES_D2001.pdf Description: DIODE ZENER ARRAY 16V SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
19+17.51 грн
28+11.19 грн
100+7.53 грн
500+5.42 грн
1000+4.87 грн
Мінімальне замовлення: 19
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BZX584B12 RSG BZX584B12 RSG Taiwan Semiconductor Corporation BZX584B2V4 SERIES_D2007.pdf Description: SOD-523F, 150MW, 2%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
8000+4.42 грн
16000+3.91 грн
24000+3.74 грн
40000+3.33 грн
56000+3.22 грн
80000+3.19 грн
Мінімальне замовлення: 8000
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BZX584B12 RSG BZX584B12 RSG Taiwan Semiconductor Corporation BZX584B2V4 SERIES_D2007.pdf Description: SOD-523F, 150MW, 2%, SMALL SIGNA
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
17+19.10 грн
26+12.18 грн
100+8.19 грн
500+5.91 грн
1000+5.31 грн
2000+4.80 грн
Мінімальне замовлення: 17
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TS9011KCX RFG TS9011KCX RFG Taiwan Semiconductor Corporation TS9011_I2402.pdf Description: IC REG LINEAR 2.5V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Reset
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.7V @ 160mA
Protection Features: Over Temperature
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+13.52 грн
6000+12.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS9011KCX RFG TS9011KCX RFG Taiwan Semiconductor Corporation TS9011_I2402.pdf Description: IC REG LINEAR 2.5V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Reset
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.7V @ 160mA
Protection Features: Over Temperature
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
5+67.64 грн
10+40.46 грн
25+33.90 грн
100+24.80 грн
250+21.36 грн
500+19.24 грн
1000+17.20 грн
Мінімальне замовлення: 5
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TSM60NE285CP ROG TSM60NE285CP ROG Taiwan Semiconductor Corporation view-part Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+89.18 грн
Мінімальне замовлення: 2500
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TSM60NE285CP ROG TSM60NE285CP ROG Taiwan Semiconductor Corporation view-part Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+224.42 грн
10+148.82 грн
100+107.99 грн
500+84.48 грн
1000+80.59 грн
Мінімальне замовлення: 2
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TSSD10L200SW TSSD10L200SW Taiwan Semiconductor Corporation Description: 10A, 200V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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TSSD10L100SW TSSD10L100SW Taiwan Semiconductor Corporation Description: 10A, 100V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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TSSD20L200SW TSSD20L200SW Taiwan Semiconductor Corporation Description: 20A, 200V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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RS1K-T RS1K-T Taiwan Semiconductor Corporation RS1D-T SERIES_F2111.pdf Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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P6KE200C P6KE200C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 162VWM 287VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 600W
Power Line Protection: No
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DBLS207G-T DBLS207G-T Taiwan Semiconductor Corporation DBLS204G-T%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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P6SMB8.2A P6SMB8.2A Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB8.2AH P6SMB8.2AH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBR6040CT MBR6040CT Taiwan Semiconductor Corporation MBR6040CT_E2112.pdf Description: DIODE ARR SCHOTT 40V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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MBR6040CTH MBR6040CTH Taiwan Semiconductor Corporation MBR6040CT_E2112.pdf Description: DIODE ARR SCHOTT 40V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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MBR6035PTH Taiwan Semiconductor Corporation MBR6035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 35V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Qualification: AEC-Q101
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MBR6050PTH Taiwan Semiconductor Corporation MBR6035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Qualification: AEC-Q101
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MBR6050PT Taiwan Semiconductor Corporation MBR6035PT%20SERIES_H2103.pdf Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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TSA884CX RFG TSA884CX RFG Taiwan Semiconductor Corporation TSA884CX_F2206.pdf Description: TRANS PNP 500V 0.15A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
3000+11.21 грн
6000+10.25 грн
9000+9.51 грн
Мінімальне замовлення: 3000
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TSA884CX RFG TSA884CX RFG Taiwan Semiconductor Corporation TSA884CX_F2206.pdf Description: TRANS PNP 500V 0.15A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
на замовлення 11980 шт:
термін постачання 21-31 дні (днів)
10+33.42 грн
12+27.36 грн
100+19.03 грн
500+13.94 грн
1000+11.33 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TSA874CW RPG TSA874CW RPG Taiwan Semiconductor Corporation TSA874_H15.pdf Description: TRANS PNP 500V 0.15A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 1 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+13.55 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSA874CW RPG TSA874CW RPG Taiwan Semiconductor Corporation TSA874_H15.pdf Description: TRANS PNP 500V 0.15A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 1 W
на замовлення 4298 шт:
термін постачання 21-31 дні (днів)
8+39.79 грн
10+33.11 грн
100+23.01 грн
500+16.86 грн
1000+13.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FR154G-T FR154G-T Taiwan Semiconductor Corporation FR151G-T%20SERIES_B2105.pdf Description: 150NS, 1.5A, 400V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZX55B33 Taiwan Semiconductor Corporation BZX55B2V4%20SERIES_G2301.pdf Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
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MBRS2535CTH MBRS2535CTH Taiwan Semiconductor Corporation MBRS2535CTH%20SERIES_A2103.pdf Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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S2MFSH S2MFSH Taiwan Semiconductor Corporation S2DFSH SERIES_B2103.pdf Description: DIODE STANDARD 1000V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 19267 шт:
термін постачання 21-31 дні (днів)
14+23.87 грн
22+14.10 грн
100+8.81 грн
500+6.11 грн
1000+5.42 грн
2000+4.83 грн
5000+4.12 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
MBR750 MBR750 Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: 7.5A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MBR750H MBR750H Taiwan Semiconductor Corporation MBR735%20SERIES_K2103.pdf Description: 7.5A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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TSM4936DCS Taiwan Semiconductor Corporation Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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SF68GH SF68GH Taiwan Semiconductor Corporation SF61G SERIES_G2105.pdf Description: DIODE GEN PURP 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)
7+47.75 грн
10+40.08 грн
100+27.75 грн
500+21.76 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
PU3BA PU3BA Taiwan Semiconductor Corporation PU3BA SERIES_A2210.pdf Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
7500+8.05 грн
15000+6.98 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
PU3BA PU3BA Taiwan Semiconductor Corporation PU3BA SERIES_A2210.pdf Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
11+31.04 грн
14+23.22 грн
100+13.95 грн
500+12.13 грн
1000+8.24 грн
2000+7.59 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
SF3006PTH SF3006PTH Taiwan Semiconductor Corporation SF3001PT SERIES_J2103.pdf Description: DIODE GEN PURP 400V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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P6KE7.5H P6KE7.5H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 7.5V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE7.5CH P6KE7.5CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 7.5V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE7.5C P6KE7.5C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 7.5V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE6.8 P6KE6.8 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE6.8H P6KE6.8H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE6.8CH P6KE6.8CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE6.8C P6KE6.8C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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HER1602GH HER1602GH Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: 50NS, 16A, 100V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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HER1602G HER1602G Taiwan Semiconductor Corporation HER1601G%20SERIES_J2104.pdf Description: 50NS, 16A, 100V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1602G SF1602G Taiwan Semiconductor Corporation SF1601G SERIES_I2104.pdf Description: 35NS, 16A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1602GH SF1602GH Taiwan Semiconductor Corporation Description: 35NS, 16A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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FR103G-K FR103G-K Taiwan Semiconductor Corporation FR101G-K%20SERIES_B2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR103G FR103G Taiwan Semiconductor Corporation FR101G SERIES_H2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR103GH FR103GH Taiwan Semiconductor Corporation FR101G%20SERIES_H2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TQM84KDCU6 RFG TQM84KDCU6 RFG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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TQM84KDCU6 RFG TQM84KDCU6 RFG Taiwan Semiconductor Corporation Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
13+26.26 грн
20+15.48 грн
100+9.72 грн
500+6.76 грн
1000+6.00 грн
Мінімальне замовлення: 13
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M3Z12VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z12VC RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M3Z12VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z12VC RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 9 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.75 грн
52+5.98 грн
100+3.98 грн
500+2.84 грн
1000+2.53 грн
Мінімальне замовлення: 37
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M3Z16VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z16VC RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.36 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
M3Z16VC RRG M3Z2V0C SERIES_B2008.pdf
M3Z16VC RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323F, 200MW, 5%, ZENER DIODE
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
37+8.75 грн
52+5.98 грн
100+3.98 грн
500+2.84 грн
1000+2.53 грн
Мінімальне замовлення: 37
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UDZS16B RRG UDZS3V6B SERIES_H2212.pdf
UDZS16B RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.63 грн
Мінімальне замовлення: 3000
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UDZS16B RRG UDZS3V6B SERIES_H2212.pdf
UDZS16B RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Current - Reverse Leakage @ Vr: 45 nA @ 12 V
на замовлення 5979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+10.35 грн
47+6.59 грн
100+4.42 грн
500+3.15 грн
1000+2.81 грн
Мінімальне замовлення: 31
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BZT52B12S R9G BZT52B2V4S SERIES_H2212.pdf
BZT52B12S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12S R9G BZT52B2V4S SERIES_H2212.pdf
BZT52B12S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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AZ23C16 RFG AZ23C2V7 SERIES_D2001.pdf
AZ23C16 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 16V SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+4.59 грн
Мінімальне замовлення: 3000
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AZ23C16 RFG AZ23C2V7 SERIES_D2001.pdf
AZ23C16 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 16V SOT23
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.51 грн
28+11.19 грн
100+7.53 грн
500+5.42 грн
1000+4.87 грн
Мінімальне замовлення: 19
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BZX584B12 RSG BZX584B2V4 SERIES_D2007.pdf
BZX584B12 RSG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-523F, 150MW, 2%, SMALL SIGNA
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 96000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8000+4.42 грн
16000+3.91 грн
24000+3.74 грн
40000+3.33 грн
56000+3.22 грн
80000+3.19 грн
Мінімальне замовлення: 8000
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BZX584B12 RSG BZX584B2V4 SERIES_D2007.pdf
BZX584B12 RSG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-523F, 150MW, 2%, SMALL SIGNA
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-523F
Power - Max: 150 mW
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.10 грн
26+12.18 грн
100+8.19 грн
500+5.91 грн
1000+5.31 грн
2000+4.80 грн
Мінімальне замовлення: 17
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TS9011KCX RFG TS9011_I2402.pdf
TS9011KCX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 2.5V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Reset
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.7V @ 160mA
Protection Features: Over Temperature
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+13.52 грн
6000+12.26 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TS9011KCX RFG TS9011_I2402.pdf
TS9011KCX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 2.5V 250MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.5V
Control Features: Current Limit, Reset
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.7V @ 160mA
Protection Features: Over Temperature
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.64 грн
10+40.46 грн
25+33.90 грн
100+24.80 грн
250+21.36 грн
500+19.24 грн
1000+17.20 грн
Мінімальне замовлення: 5
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TSM60NE285CP ROG view-part
TSM60NE285CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+89.18 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TSM60NE285CP ROG view-part
TSM60NE285CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 274mOhm @ 5A, 12V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 884 pF @ 300 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+224.42 грн
10+148.82 грн
100+107.99 грн
500+84.48 грн
1000+80.59 грн
Мінімальне замовлення: 2
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TSSD10L200SW
TSSD10L200SW
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 200V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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TSSD10L100SW
TSSD10L100SW
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 100V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 540pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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TSSD20L200SW
TSSD20L200SW
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 200V, TRENCH SCHOTTKY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 880pF @ 4V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 20 µA @ 200 V
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RS1K-T RS1D-T SERIES_F2111.pdf
RS1K-T
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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P6KE200C P6KE SERIES_P2203.pdf
P6KE200C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 162VWM 287VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 162V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 180V
Voltage - Clamping (Max) @ Ipp: 287V
Power - Peak Pulse: 600W
Power Line Protection: No
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DBLS207G-T DBLS204G-T%20SERIES_C2103.pdf
DBLS207G-T
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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P6SMB8.2A P6SMB SERIES_Q2209.pdf
P6SMB8.2A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB8.2AH P6SMBH SERIES_A2102.pdf
P6SMB8.2AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 7.02VWM 12.1V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 52A
Voltage - Reverse Standoff (Typ): 7.02V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.79V
Voltage - Clamping (Max) @ Ipp: 12.1V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MBR6040CT MBR6040CT_E2112.pdf
MBR6040CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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MBR6040CTH MBR6040CT_E2112.pdf
MBR6040CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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MBR6035PTH MBR6035PT%20SERIES_H2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 35 V
Qualification: AEC-Q101
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MBR6050PTH MBR6035PT%20SERIES_H2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Qualification: AEC-Q101
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MBR6050PT MBR6035PT%20SERIES_H2103.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 50V 60A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 60A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 60 A
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
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TSA884CX RFG TSA884CX_F2206.pdf
TSA884CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 500V 0.15A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.21 грн
6000+10.25 грн
9000+9.51 грн
Мінімальне замовлення: 3000
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TSA884CX RFG TSA884CX_F2206.pdf
TSA884CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 500V 0.15A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 300 mW
на замовлення 11980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+33.42 грн
12+27.36 грн
100+19.03 грн
500+13.94 грн
1000+11.33 грн
Мінімальне замовлення: 10
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TSA874CW RPG TSA874_H15.pdf
TSA874CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 500V 0.15A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 1 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+13.55 грн
Мінімальне замовлення: 2500
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TSA874CW RPG TSA874_H15.pdf
TSA874CW RPG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 500V 0.15A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 500 V
Power - Max: 1 W
на замовлення 4298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.79 грн
10+33.11 грн
100+23.01 грн
500+16.86 грн
1000+13.70 грн
Мінімальне замовлення: 8
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FR154G-T FR151G-T%20SERIES_B2105.pdf
FR154G-T
Виробник: Taiwan Semiconductor Corporation
Description: 150NS, 1.5A, 400V, FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BZX55B33 BZX55B2V4%20SERIES_G2301.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DO-35, 500MW, 2%, SMALL SIGNAL Z
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 24 V
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MBRS2535CTH MBRS2535CTH%20SERIES_A2103.pdf
MBRS2535CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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S2MFSH S2DFSH SERIES_B2103.pdf
S2MFSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 2A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: AEC-Q101
на замовлення 19267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.87 грн
22+14.10 грн
100+8.81 грн
500+6.11 грн
1000+5.42 грн
2000+4.83 грн
5000+4.12 грн
Мінімальне замовлення: 14
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MBR750 MBR735%20SERIES_K2103.pdf
MBR750
Виробник: Taiwan Semiconductor Corporation
Description: 7.5A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MBR750H MBR735%20SERIES_K2103.pdf
MBR750H
Виробник: Taiwan Semiconductor Corporation
Description: 7.5A, 50V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
Qualification: AEC-Q101
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TSM4936DCS
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2N-CH 30V 5.9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOP
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SF68GH SF61G SERIES_G2105.pdf
SF68GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 6A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.75 грн
10+40.08 грн
100+27.75 грн
500+21.76 грн
Мінімальне замовлення: 7
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PU3BA PU3BA SERIES_A2210.pdf
PU3BA
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+8.05 грн
15000+6.98 грн
Мінімальне замовлення: 7500
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PU3BA PU3BA SERIES_A2210.pdf
PU3BA
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 100V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 47pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+31.04 грн
14+23.22 грн
100+13.95 грн
500+12.13 грн
1000+8.24 грн
2000+7.59 грн
Мінімальне замовлення: 11
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SF3006PTH SF3001PT SERIES_J2103.pdf
SF3006PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 30A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 175pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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P6KE7.5H P6KE SERIES_P2203.pdf
P6KE7.5H
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 7.5V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE7.5CH P6KE SERIES_P2203.pdf
P6KE7.5CH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 7.5V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE7.5C P6KE SERIES_P2203.pdf
P6KE7.5C
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 7.5V, BIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 53A
Voltage - Reverse Standoff (Typ): 6.05V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.75V
Voltage - Clamping (Max) @ Ipp: 11.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE6.8 P6KE SERIES_P2203.pdf
P6KE6.8
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE6.8H P6KE SERIES_P2203.pdf
P6KE6.8H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE6.8CH P6KE SERIES_P2203.pdf
P6KE6.8CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE6.8C P6KE SERIES_P2203.pdf
P6KE6.8C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.5VWM 10.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58A
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.12V
Voltage - Clamping (Max) @ Ipp: 10.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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HER1602GH HER1601G%20SERIES_J2104.pdf
HER1602GH
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 16A, 100V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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HER1602G HER1601G%20SERIES_J2104.pdf
HER1602G
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 16A, 100V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1602G SF1601G SERIES_I2104.pdf
SF1602G
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 16A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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SF1602GH
SF1602GH
Виробник: Taiwan Semiconductor Corporation
Description: 35NS, 16A, 100V, SUPER FAST RECO
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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FR103G-K FR101G-K%20SERIES_B2104.pdf
FR103G-K
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR103G FR101G SERIES_H2104.pdf
FR103G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FR103GH FR101G%20SERIES_H2104.pdf
FR103GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
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TQM84KDCU6 RFG
TQM84KDCU6 RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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TQM84KDCU6 RFG
TQM84KDCU6 RFG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET 2P-CH 60V 0.17A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 320mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38.2pF @ 30V
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.9nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.26 грн
20+15.48 грн
100+9.72 грн
500+6.76 грн
1000+6.00 грн
Мінімальне замовлення: 13
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