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DBLS155G-T DBLS155G-T Taiwan Semiconductor Corporation DBLS154G-T%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 600V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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DBLS156G-T DBLS156G-T Taiwan Semiconductor Corporation DBLS154G-T%20SERIES_E2103.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS151GH DBLS151GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS153GH DBLS153GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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DBLS151G DBLS151G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS152G DBLS152G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS153G DBLS153G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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DBLS152GH DBLS152GH Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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SR2040PTH SR2040PTH Taiwan Semiconductor Corporation SR2020PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SR2040PT SR2040PT Taiwan Semiconductor Corporation SR2020PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRS2535CT MBRS2535CT Taiwan Semiconductor Corporation MBRS2535CT%20SERIES_N2103.pdf Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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P6SMB100H P6SMB100H Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB100 P6SMB100 Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB100CH P6SMB100CH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: 600W, 100V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB100C P6SMB100C Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: 600W, 100V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE39H P6KE39H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE39 P6KE39 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE39CH P6KE39CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE39C P6KE39C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ9V0CA SMBJ9V0CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+20.73 грн
Мінімальне замовлення: 3000
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SMBJ9V0CA SMBJ9V0CA Taiwan Semiconductor Corporation SMBJ SERIES_R2104.pdf Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
4+82.28 грн
10+49.78 грн
100+32.70 грн
500+23.78 грн
1000+21.56 грн
Мінімальне замовлення: 4
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P4KE16A P4KE16A Taiwan Semiconductor Corporation P4KE SERIES_N2104.pdf Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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TQM130NB04CV RGG TQM130NB04CV RGG Taiwan Semiconductor Corporation TQM130NB04CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+16.75 грн
Мінімальне замовлення: 5000
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TQM130NB04CV RGG TQM130NB04CV RGG Taiwan Semiconductor Corporation TQM130NB04CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+62.88 грн
10+40.44 грн
100+27.81 грн
500+20.73 грн
1000+18.96 грн
2000+17.46 грн
Мінімальне замовлення: 5
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TQM300NB06CV RGG TQM300NB06CV RGG Taiwan Semiconductor Corporation TQM300NB06CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+17.50 грн
Мінімальне замовлення: 5000
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TQM300NB06CV RGG TQM300NB06CV RGG Taiwan Semiconductor Corporation TQM300NB06CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+62.88 грн
10+40.44 грн
100+27.81 грн
500+20.73 грн
1000+18.96 грн
2000+17.46 грн
Мінімальне замовлення: 5
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TQM250NB06CV RGG TQM250NB06CV RGG Taiwan Semiconductor Corporation TQM250NB06CV_C2403.pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.04 грн
Мінімальне замовлення: 5000
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TQM250NB06CV RGG TQM250NB06CV RGG Taiwan Semiconductor Corporation TQM250NB06CV_C2403.pdf Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+67.53 грн
10+43.58 грн
100+30.05 грн
500+22.46 грн
1000+20.57 грн
2000+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TQM100NB04CV RGG TQM100NB04CV RGG Taiwan Semiconductor Corporation Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+19.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TQM100NB04CV RGG TQM100NB04CV RGG Taiwan Semiconductor Corporation Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5+67.53 грн
10+43.58 грн
100+30.05 грн
500+22.46 грн
1000+20.57 грн
2000+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1.5SMC30CAHM6G 1.5SMC30CAHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC30CAHR7G 1.5SMC30CAHR7G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE170A P6KE170A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 145VWM 234VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE170A P6KE170A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 145VWM 234VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47H P6KE47H Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 47V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE47 P6KE47 Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: 600W, 47V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47C P6KE47C Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 38.1VWM 67.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47CH P6KE47CH Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 38.1VWM 67.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB10CAHM4G P6SMB10CAHM4G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZS55C22 RAG BZS55C22 RAG Taiwan Semiconductor Corporation BZS55C2V4 SERIES_E2301.pdf Description: DIODE ZENER 22V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
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P6SMB43A P6SMB43A Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf Description: TVS DIODE 36.8VWM 59.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.6A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 600W
Power Line Protection: No
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BZX84C13 BZX84C13 Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 13V 300MW SOT23
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MBR2535CTH MBR2535CTH Taiwan Semiconductor Corporation MBR2535CT%20SERIES_K2104.pdf Description: DIODE ARR SCHOTT 35V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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SMCJ100CA SMCJ100CA Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 100VWM 162VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ100CA SMCJ100CA Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: TVS DIODE 100VWM 162VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3333 шт:
термін постачання 21-31 дні (днів)
8+38.81 грн
10+32.44 грн
100+23.40 грн
500+19.63 грн
1000+16.29 грн
Мінімальне замовлення: 8
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SMCJ100 SMCJ100 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 123.5V, 10%, UNIDIRECTION
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+26.38 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SMCJ100 SMCJ100 Taiwan Semiconductor Corporation SMCJ SERIES_S2104.pdf Description: 1500W, 123.5V, 10%, UNIDIRECTION
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
7+45.02 грн
10+37.90 грн
100+26.33 грн
500+23.84 грн
Мінімальне замовлення: 7
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MBRF2060H MBRF2060H Taiwan Semiconductor Corporation MBRF2035%20SERIES_K2105.pdf Description: 20A, 60V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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TST10102C TST10102C Taiwan Semiconductor Corporation datasheet Description: 10A, 100V, Trench Schottky
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
3+117.99 грн
10+76.99 грн
100+54.22 грн
500+41.35 грн
1000+38.23 грн
2000+35.58 грн
Мінімальне замовлення: 3
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SR10150H SR10150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRAF10150H SRAF10150H Taiwan Semiconductor Corporation Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRA10150H SRA10150H Taiwan Semiconductor Corporation Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRF20150H SRF20150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SR20150H SR20150H Taiwan Semiconductor Corporation Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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GBU802 GBU802 Taiwan Semiconductor Corporation GBU801 SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
4+101.69 грн
10+69.97 грн
100+55.29 грн
500+41.03 грн
Мінімальне замовлення: 4
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MBRF1635 MBRF1635 Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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MBRF1635H MBRF1635H Taiwan Semiconductor Corporation MBRF1635%20SERIES_K2105.pdf Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
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BAT54GW RHG BAT54GW RHG Taiwan Semiconductor Corporation BAT54GW_A2004.pdf Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54GW RHG BAT54GW RHG Taiwan Semiconductor Corporation BAT54GW_A2004.pdf Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 1684 шт:
термін постачання 21-31 дні (днів)
27+11.64 грн
43+7.10 грн
100+4.37 грн
500+2.98 грн
1000+2.61 грн
Мінімальне замовлення: 27
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BAT54GW BAT54GW Taiwan Semiconductor Corporation Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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DBLS155G-T DBLS154G-T%20SERIES_E2103.pdf
DBLS155G-T
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
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DBLS156G-T DBLS154G-T%20SERIES_E2103.pdf
DBLS156G-T
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS151GH DBLS151G%20SERIES_M2103.pdf
DBLS151GH
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS153GH DBLS151G%20SERIES_M2103.pdf
DBLS153GH
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Qualification: AEC-Q101
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DBLS151G DBLS151G%20SERIES_M2103.pdf
DBLS151G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS152G DBLS151G%20SERIES_M2103.pdf
DBLS152G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
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DBLS153G DBLS151G%20SERIES_M2103.pdf
DBLS153G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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DBLS152GH DBLS151G%20SERIES_M2103.pdf
DBLS152GH
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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SR2040PTH SR2020PT SERIES_J2103.pdf
SR2040PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SR2040PT SR2020PT SERIES_J2103.pdf
SR2040PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 40V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 10 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRS2535CT MBRS2535CT%20SERIES_N2103.pdf
MBRS2535CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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P6SMB100H P6SMBH SERIES_A2102.pdf
P6SMB100H
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB100 P6SMB SERIES_Q2209.pdf
P6SMB100
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, UNIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB100CH P6SMBH SERIES_A2102.pdf
P6SMB100CH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB100C P6SMB SERIES_Q2209.pdf
P6SMB100C
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 100V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.3A
Voltage - Reverse Standoff (Typ): 81V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 90V
Voltage - Clamping (Max) @ Ipp: 144V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE39H P6KE SERIES_P2203.pdf
P6KE39H
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE39 P6KE SERIES_P2203.pdf
P6KE39
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE39CH P6KE SERIES_P2203.pdf
P6KE39CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE39C P6KE SERIES_P2203.pdf
P6KE39C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 31.6VWM 56.4V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 31.6V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 35.1V
Voltage - Clamping (Max) @ Ipp: 56.4V
Power - Peak Pulse: 600W
Power Line Protection: No
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SMBJ9V0CA SMBJ SERIES_R2104.pdf
SMBJ9V0CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+20.73 грн
Мінімальне замовлення: 3000
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SMBJ9V0CA SMBJ SERIES_R2104.pdf
SMBJ9V0CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 5935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.28 грн
10+49.78 грн
100+32.70 грн
500+23.78 грн
1000+21.56 грн
Мінімальне замовлення: 4
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P4KE16A P4KE SERIES_N2104.pdf
P4KE16A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 13.6VWM 22.5VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 18.6A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: DO-204AL (DO-41)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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TQM130NB04CV RGG TQM130NB04CV_C2403.pdf
TQM130NB04CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+16.75 грн
Мінімальне замовлення: 5000
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TQM130NB04CV RGG TQM130NB04CV_C2403.pdf
TQM130NB04CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 19A, 10V
Power Dissipation (Max): 2.4W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 994 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+62.88 грн
10+40.44 грн
100+27.81 грн
500+20.73 грн
1000+18.96 грн
2000+17.46 грн
Мінімальне замовлення: 5
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TQM300NB06CV RGG TQM300NB06CV_C2403.pdf
TQM300NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+17.50 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TQM300NB06CV RGG TQM300NB06CV_C2403.pdf
TQM300NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 11A, 10V
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 975 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+62.88 грн
10+40.44 грн
100+27.81 грн
500+20.73 грн
1000+18.96 грн
2000+17.46 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TQM250NB06CV RGG TQM250NB06CV_C2403.pdf
TQM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TQM250NB06CV RGG TQM250NB06CV_C2403.pdf
TQM250NB06CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 13A, 10V
Power Dissipation (Max): 2.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1221 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.53 грн
10+43.58 грн
100+30.05 грн
500+22.46 грн
1000+20.57 грн
2000+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TQM100NB04CV RGG
TQM100NB04CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.04 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
TQM100NB04CV RGG
TQM100NB04CV RGG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 23.5A, 10V
Power Dissipation (Max): 2.4W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-PDFN (3.15x3.1)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1319 pF @ 20 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+67.53 грн
10+43.58 грн
100+30.05 грн
500+22.46 грн
1000+20.57 грн
2000+18.96 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
1.5SMC30CAHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC30CAHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5SMC30CAHR7G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC30CAHR7G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 25.6VWM 41.4V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE170A P6KE SERIES_P2203.pdf
P6KE170A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE170A P6KE SERIES_P2203.pdf
P6KE170A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 145VWM 234VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.6A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47H P6KE SERIES_P2203.pdf
P6KE47H
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 47V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6KE47 P6KE SERIES_P2203.pdf
P6KE47
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 47V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47C P6KE SERIES_P2203.pdf
P6KE47C
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 38.1VWM 67.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE47CH P6KE SERIES_P2203.pdf
P6KE47CH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 38.1VWM 67.8V DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 9.2A
Voltage - Reverse Standoff (Typ): 38.1V
Supplier Device Package: DO-204AC (DO-15)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 42.3V
Voltage - Clamping (Max) @ Ipp: 67.8V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB10CAHM4G P6SMB%20SERIES_Q2209.pdf
P6SMB10CAHM4G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55VWM 14.5VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 43A
Voltage - Reverse Standoff (Typ): 8.55V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 9.5V
Voltage - Clamping (Max) @ Ipp: 14.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZS55C22 RAG BZS55C2V4 SERIES_E2301.pdf
BZS55C22 RAG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 500MW 1206
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 1206 (3216 Metric)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: 1206
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 16 V
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P6SMB43A P6SMB SERIES_Q2209.pdf
P6SMB43A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 36.8VWM 59.3V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.6A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.9V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 600W
Power Line Protection: No
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BZX84C13 BZX84C2V4%20SERIES_F2001.pdf
BZX84C13
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 13V 300MW SOT23
Tolerance: ±6.54%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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MBR2535CTH MBR2535CT%20SERIES_K2104.pdf
MBR2535CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 35V 25A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 25A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 25 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
Qualification: AEC-Q101
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SMCJ100CA SMCJ SERIES_S2104.pdf
SMCJ100CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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SMCJ100CA SMCJ SERIES_S2104.pdf
SMCJ100CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 100VWM 162VC SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.3A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3333 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+38.81 грн
10+32.44 грн
100+23.40 грн
500+19.63 грн
1000+16.29 грн
Мінімальне замовлення: 8
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SMCJ100 SMCJ SERIES_S2104.pdf
SMCJ100
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 123.5V, 10%, UNIDIRECTION
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+26.38 грн
Мінімальне замовлення: 3000
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SMCJ100 SMCJ SERIES_S2104.pdf
SMCJ100
Виробник: Taiwan Semiconductor Corporation
Description: 1500W, 123.5V, 10%, UNIDIRECTION
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 179V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+45.02 грн
10+37.90 грн
100+26.33 грн
500+23.84 грн
Мінімальне замовлення: 7
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MBRF2060H MBRF2035%20SERIES_K2105.pdf
MBRF2060H
Виробник: Taiwan Semiconductor Corporation
Description: 20A, 60V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 20A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Qualification: AEC-Q101
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TST10102C datasheet
TST10102C
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 100V, Trench Schottky
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.99 грн
10+76.99 грн
100+54.22 грн
500+41.35 грн
1000+38.23 грн
2000+35.58 грн
Мінімальне замовлення: 3
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SR10150H
SR10150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRAF10150H
SRAF10150H
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRA10150H
SRA10150H
Виробник: Taiwan Semiconductor Corporation
Description: 10A, 150V, PLANAR SCHOTTKY
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SRF20150H
SRF20150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 150V ITO220AB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.02 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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SR20150H
SR20150H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 150V 20A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Qualification: AEC-Q101
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GBU802 GBU801 SERIES_M2103.pdf
GBU802
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 8A GBU
Packaging: Tube
Package / Case: 4-ESIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
на замовлення 961 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.69 грн
10+69.97 грн
100+55.29 грн
500+41.03 грн
Мінімальне замовлення: 4
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MBRF1635 MBRF1635%20SERIES_K2105.pdf
MBRF1635
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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MBRF1635H MBRF1635%20SERIES_K2105.pdf
MBRF1635H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 35V 16A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
Qualification: AEC-Q101
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BAT54GW RHG BAT54GW_A2004.pdf
BAT54GW RHG
Виробник: Taiwan Semiconductor Corporation
Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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BAT54GW RHG BAT54GW_A2004.pdf
BAT54GW RHG
Виробник: Taiwan Semiconductor Corporation
Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 1684 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.64 грн
43+7.10 грн
100+4.37 грн
500+2.98 грн
1000+2.61 грн
Мінімальне замовлення: 27
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BAT54GW
BAT54GW
Виробник: Taiwan Semiconductor Corporation
Description: 0.1A, 30V, SCHOTTKY RECTIFIER
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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