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DBLS105GHC1G DBLS105GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 600V 1A DBLS
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DBLS106G C1G DBLS106G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS106GHC1G DBLS106GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS107G C1G DBLS107G C1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS107GHC1G DBLS107GHC1G Taiwan Semiconductor Corporation DBLS101G%20SERIES_P2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
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DBLS151G C1G DBLS151G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS151GHC1G DBLS151GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS152G C1G DBLS152G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
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DBLS152GHC1G DBLS152GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 100V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS153G C1G DBLS153G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
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DBLS153GHC1G DBLS153GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 200V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS154G C1G DBLS154G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 400V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS154GHC1G DBLS154GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS155G C1G DBLS155G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS155GHC1G DBLS155GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS156G C1G DBLS156G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS156GHC1G DBLS156GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS157G C1G DBLS157G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS157GHC1G DBLS157GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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DBLS158G C1G DBLS158G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_M2103.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS158GHC1G DBLS158GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS159G C1G DBLS159G C1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS159GHC1G DBLS159GHC1G Taiwan Semiconductor Corporation DBLS151G%20SERIES_L15.pdf Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS201G C1G DBLS201G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS201GHC1G DBLS201GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS202G C1G DBLS202G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 100V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS202GHC1G DBLS202GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 100V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS203G C1G DBLS203G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS203GHC1G DBLS203GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Voltage - Peak Reverse (Max): 200 V
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS204G C1G DBLS204G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS204GHC1G DBLS204GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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DBLS205G C1G DBLS205G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS205GHC1G DBLS205GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Voltage - Peak Reverse (Max): 600 V
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DBLS206G C1G DBLS206G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS206GHC1G DBLS206GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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DBLS207G C1G DBLS207G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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DBLS207GHC1G DBLS207GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
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DBLS208G C1G DBLS208G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS208GHC1G DBLS208GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS209G C1G DBLS209G C1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_J2103.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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DBLS209GHC1G DBLS209GHC1G Taiwan Semiconductor Corporation DBLS201G%20SERIES_I15.pdf Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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GBL04 D2G GBL04 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_J15.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
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GBL04HD2G GBL04HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 400V 4A GBL
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GBL06HD2G GBL06HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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GBL08HD2G GBL08HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 800V 4A GBL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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GBL10 D2G GBL10 D2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
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GBL10HD2G GBL10HD2G Taiwan Semiconductor Corporation GBL005%20SERIES_K2103.pdf Description: BRIDGE RECT 1PHASE 1KV 4A GBL
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GBU1001 D2G GBU1001 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Diode Type: Single Phase
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GBU1001HD2G GBU1001HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 50V 10A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU1002 D2G GBU1002 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU1002HD2G GBU1002HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 100V 10A GBU
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GBU1003 D2G GBU1003 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1003HD2G GBU1003HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1004 D2G GBU1004 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1004HD2G GBU1004HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1005 D2G GBU1005 D2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1005HD2G GBU1005HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1006HD2G GBU1006HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_M2103.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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GBU1007HD2G GBU1007HD2G Taiwan Semiconductor Corporation GBU1001%20SERIES_K1705.pdf Description: BRIDGE RECT 1PHASE 1KV 10A GBU
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GBU15L05 D2G GBU15L05 D2G Taiwan Semiconductor Corporation GBU15L05%20SERIES_C2103.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBU
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DBLS105GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS105GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 1A DBLS
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DBLS106G C1G DBLS101G%20SERIES_P2103.pdf
DBLS106G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS106GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS106GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBLS
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DBLS107G C1G DBLS101G%20SERIES_P2103.pdf
DBLS107G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS107GHC1G DBLS101G%20SERIES_P2103.pdf
DBLS107GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1A DBLS
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DBLS151G C1G DBLS151G%20SERIES_M2103.pdf
DBLS151G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS151GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS151GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS152G C1G DBLS151G%20SERIES_M2103.pdf
DBLS152G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
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DBLS152GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS152GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 100V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS153G C1G DBLS151G%20SERIES_M2103.pdf
DBLS153G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
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DBLS153GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS153GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 200V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS154G C1G DBLS151G%20SERIES_M2103.pdf
DBLS154G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 400 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS154GHC1G DBLS151G%20SERIES_L15.pdf
DBLS154GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 400V 1.5A DBLS
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DBLS155G C1G DBLS151G%20SERIES_L15.pdf
DBLS155G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS155GHC1G DBLS151G%20SERIES_L15.pdf
DBLS155GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 1.5A DBLS
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DBLS156G C1G DBLS151G%20SERIES_L15.pdf
DBLS156G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS156GHC1G DBLS151G%20SERIES_L15.pdf
DBLS156GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 800V 1.5A DBLS
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DBLS157G C1G DBLS151G%20SERIES_M2103.pdf
DBLS157G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS157GHC1G DBLS151G%20SERIES_M2103.pdf
DBLS157GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 1.5A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 1 kV
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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DBLS158G C1G DBLS151G%20SERIES_M2103.pdf
DBLS158G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS158GHC1G DBLS151G%20SERIES_L15.pdf
DBLS158GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.2KV 1.5A DBLS
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DBLS159G C1G DBLS151G%20SERIES_L15.pdf
DBLS159G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS159GHC1G DBLS151G%20SERIES_L15.pdf
DBLS159GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 1.4KV 1.5A DBLS
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DBLS201G C1G DBLS201G%20SERIES_J2103.pdf
DBLS201G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
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DBLS201GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS201GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 50 V
Qualification: AEC-Q101
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DBLS202G C1G DBLS201G%20SERIES_J2103.pdf
DBLS202G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS202GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS202GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 100 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS203G C1G DBLS201G%20SERIES_J2103.pdf
DBLS203G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 200 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS203GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS203GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 2A DBLS
Voltage - Peak Reverse (Max): 200 V
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS204G C1G DBLS201G%20SERIES_J2103.pdf
DBLS204G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS204GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS204GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 2A DBLS
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 400 V
Part Status: Active
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
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DBLS205G C1G DBLS201G%20SERIES_J2103.pdf
DBLS205G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
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DBLS205GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS205GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 2A DBLS
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Average Rectified (Io): 2 A
Supplier Device Package: DBLS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Voltage - Peak Reverse (Max): 600 V
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DBLS206G C1G DBLS201G%20SERIES_J2103.pdf
DBLS206G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
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DBLS206GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS206GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Qualification: AEC-Q101
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DBLS207G C1G DBLS201G%20SERIES_J2103.pdf
DBLS207G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
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DBLS207GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS207GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Grade: Automotive
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Qualification: AEC-Q101
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DBLS208G C1G DBLS201G%20SERIES_J2103.pdf
DBLS208G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS208GHC1G DBLS201G%20SERIES_J2103.pdf
DBLS208GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Packaging: Tube
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBLS
Part Status: Active
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 1200 V
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DBLS209G C1G DBLS201G%20SERIES_J2103.pdf
DBLS209G C1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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DBLS209GHC1G DBLS201G%20SERIES_I15.pdf
DBLS209GHC1G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1.4KV 2A DBLS
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GBL04 D2G GBL005%20SERIES_J15.pdf
GBL04 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
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GBL04HD2G GBL005%20SERIES_K2103.pdf
GBL04HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 4A GBL
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GBL06HD2G GBL005%20SERIES_K2103.pdf
GBL06HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 4A GBL
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 600 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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GBL08HD2G GBL005%20SERIES_K2103.pdf
GBL08HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 4A GBL
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Average Rectified (Io): 4 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBL
Packaging: Tube
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GBL10 D2G GBL005%20SERIES_K2103.pdf
GBL10 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
на замовлення 1135 шт:
термін постачання 21-31 дні (днів)
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GBL10HD2G GBL005%20SERIES_K2103.pdf
GBL10HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 4A GBL
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GBU1001 D2G GBU1001%20SERIES_M2103.pdf
GBU1001 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Diode Type: Single Phase
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GBU1001HD2G GBU1001%20SERIES_M2103.pdf
GBU1001HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 50V 10A GBU
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 50 V
Grade: Automotive
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU1002 D2G GBU1001%20SERIES_M2103.pdf
GBU1002 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 100 V
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
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GBU1002HD2G GBU1001%20SERIES_K1705.pdf
GBU1002HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 100V 10A GBU
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GBU1003 D2G GBU1001%20SERIES_K1705.pdf
GBU1003 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1003HD2G GBU1001%20SERIES_K1705.pdf
GBU1003HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 200V 10A GBU
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GBU1004 D2G GBU1001%20SERIES_K1705.pdf
GBU1004 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1004HD2G GBU1001%20SERIES_K1705.pdf
GBU1004HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 400V 10A GBU
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GBU1005 D2G GBU1001%20SERIES_K1705.pdf
GBU1005 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1005HD2G GBU1001%20SERIES_K1705.pdf
GBU1005HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 10A GBU
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GBU1006HD2G GBU1001%20SERIES_M2103.pdf
GBU1006HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Average Rectified (Io): 10 A
Voltage - Peak Reverse (Max): 800 V
Part Status: Active
Supplier Device Package: GBU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, GBU
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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GBU1007HD2G GBU1001%20SERIES_K1705.pdf
GBU1007HD2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 1KV 10A GBU
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GBU15L05 D2G GBU15L05%20SERIES_C2103.pdf
GBU15L05 D2G
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 600V 15A GBU
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