Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (62676) > Сторінка 1041 з 1045
| Фото | Назва | Виробник | Інформація |
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| TLD6S10AH | TAIWAN SEMICONDUCTOR |
 Category: Unidirectional SMD transil diodesDescription: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 271A Breakdown voltage: 11.1...12.3V Leakage current: 15µA Type of diode: TVS Peak pulse power dissipation: 4.6kW Case: DO218AB |
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| TLD8S10AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. off-state voltage: 10V Semiconductor structure: unidirectional Max. forward impulse current: 388A Breakdown voltage: 11.1...12.3V Leakage current: 15µA Type of diode: TVS Peak pulse power dissipation: 6.6kW Case: DO218AB |
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RS1B M2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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BZT52C2V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 18µA |
на замовлення 990 шт: термін постачання 21-30 дні (днів) |
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| TSM35N10CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 53.3W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Power dissipation: 53.3W Case: DPAK Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
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GBU15L05 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 15A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube |
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BZT52C5V6 RH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.9µA |
на замовлення 820 шт: термін постачання 21-30 дні (днів) |
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BZT52C5V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.9µA |
на замовлення 970 шт: термін постачання 21-30 дні (днів) |
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TS2940CM33 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; D2PAK; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 3.3V Output current: 0.8A Case: D2PAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 8.3...26V Manufacturer series: TS2940 |
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TS2940CM50 RNG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 5V Output current: 0.8A Case: D2PAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 10...26V Manufacturer series: TS2940 |
на замовлення 50 шт: термін постачання 21-30 дні (днів) |
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TS2940CP33 ROG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 0...26V Manufacturer series: TS2940 |
на замовлення 114 шт: термін постачання 21-30 дні (днів) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 0...26V Manufacturer series: TS2940 |
на замовлення 411 шт: термін постачання 21-30 дні (днів) |
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TS2940CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±0.2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 0...26V Manufacturer series: TS2940 |
на замовлення 215 шт: термін постачання 21-30 дні (днів) |
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TS2940CW33 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 3.3V Output current: 0.8A Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 8.3...26V Manufacturer series: TS2940 |
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TS2940CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 5V Output current: 0.8A Case: SOT223 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 10...26V Manufacturer series: TS2940 |
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220; THT; tube Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 1A Case: TO220 Mounting: THT Kind of package: tube Operating temperature: -40...125°C Tolerance: ±0.2% Number of channels: 1 Input voltage: 0...26V Manufacturer series: TS2940 |
на замовлення 56 шт: термін постачання 21-30 дні (днів) |
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TS2940CZ33 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 3.3V Output current: 0.8A Case: TO220 Mounting: THT Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 8.3...26V Manufacturer series: TS2940 |
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TSM260P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 19.5nC Kind of channel: enhanced |
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TS2940CZ50 C0G | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.8V Output voltage: 5V Output current: 0.8A Case: TO220 Mounting: THT Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 10...26V Manufacturer series: TS2940 |
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BZT52B3V3-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 3.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 2845 шт: термін постачання 21-30 дні (днів) |
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BZT52B3V3S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 4.5µA |
на замовлення 840 шт: термін постачання 21-30 дні (днів) |
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S3M V6G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 3A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Case: SMC Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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TESDU5V0 RGG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape Type of diode: TVS Peak pulse power dissipation: 75W Max. off-state voltage: 5V Breakdown voltage: 5.1V Semiconductor structure: bidirectional Case: 0603 Mounting: SMD Leakage current: 2µA Kind of package: reel; tape |
на замовлення 505 шт: термін постачання 21-30 дні (днів) |
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| TESD5V0L1UC RJG | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape Kind of package: reel; tape Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.1µA Case: DFN1006-2 Type of diode: TVS Mounting: SMD Breakdown voltage: 6...9.8V Max. forward impulse current: 3A Peak pulse power dissipation: 100W |
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SMBJ5V0A-TSC | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 68A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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| TLD5S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 3.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 74A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
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| TLD6S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 4.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 95A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
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| TLD8S30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB Type of diode: TVS Peak pulse power dissipation: 6.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 136A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO218AB Mounting: SMD Leakage current: 10µA Kind of package: reel; tape |
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BZS55C5V6 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 0.1µA |
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TSM4436CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 1.6W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 16nC Kind of channel: enhanced |
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MBS6 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 0.8A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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MBS2 RCG | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS Electrical mounting: SMT Kind of package: reel; tape |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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SMCJ36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36V Breakdown voltage: 44.2V Max. forward impulse current: 27A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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SD103CW RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123 Mounting: SMD Max. forward impulse current: 1.5A Semiconductor structure: single diode Load current: 0.35A Max. forward voltage: 0.6V Max. off-state voltage: 20V Case: SOD123 Type of diode: Schottky rectifying |
на замовлення 2400 шт: термін постачання 21-30 дні (днів) |
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B0540W RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.5A Semiconductor structure: single diode Capacitance: 170pF Max. forward voltage: 0.62V Case: SOD123 Kind of package: reel; tape Max. forward impulse current: 5.5A Power dissipation: 0.41W |
на замовлення 1519 шт: термін постачання 21-30 дні (днів) |
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TS5204CY50 RMG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4% Operating temperature: -40...125°C Case: SOT89 Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: TS5204 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Tolerance: ±4% Output voltage: 5V Output current: 80mA Voltage drop: 0.6V Type of integrated circuit: voltage regulator |
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| TSM480P06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -13A Power dissipation: 40W Case: DPAK Gate-source voltage: ±20V On-state resistance: 48mΩ Mounting: SMD Gate charge: 22.4nC Kind of channel: enhanced |
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| TSM680P06CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -11A Power dissipation: 20W Case: DPAK Gate-source voltage: ±20V On-state resistance: 68mΩ Mounting: SMD Gate charge: 16.4nC Kind of channel: enhanced |
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BZS55C5V1 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Leakage current: 0.1µA |
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TSM650P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.6A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 65mΩ Mounting: SMD Gate charge: 6.4nC Kind of channel: enhanced |
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TSM650P03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.6A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 8nC Kind of channel: enhanced |
на замовлення 130 шт: термін постачання 21-30 дні (днів) |
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TSM2328CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23 Drain current: 1.5A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 1.38W Polarisation: unipolar Gate charge: 11.1nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SOT23 Drain-source voltage: 100V |
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TSM320N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 0.4W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8.9nC Kind of channel: enhanced |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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TS1117BCP33 ROG | TAIWAN SEMICONDUCTOR |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.5V Output voltage: 3.3V Output current: 1A Case: DPAK Mounting: SMD Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.8...12V Manufacturer series: TS1117B |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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RS1AL R2 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V Type of diode: switching Mounting: SMD Max. off-state voltage: 50V Load current: 0.8A Reverse recovery time: 150ns Semiconductor structure: single diode Capacitance: 10pF Case: subSMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 39 шт: термін постачання 21-30 дні (днів) |
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TSM210N02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23 Mounting: SMD Gate charge: 5.8nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±10V Polarisation: unipolar Power dissipation: 1.56W Type of transistor: N-MOSFET On-state resistance: 21mΩ Drain current: 4.2A Drain-source voltage: 20V |
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TSM085P03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 8.5mΩ Mounting: SMD Gate charge: 56nC Kind of channel: enhanced |
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| TSM089N08LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Power dissipation: 17W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 8.9mΩ Mounting: SMD Gate charge: 90nC Kind of channel: enhanced |
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SK84C V7G | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMC Kind of package: reel; tape Max. forward impulse current: 150A |
на замовлення 491 шт: термін постачання 21-30 дні (днів) |
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
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TSM4925DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.1A Power dissipation: 1.3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 70nC Kind of channel: enhanced |
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P6KE8.2CA R0 | TAIWAN SEMICONDUCTOR |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape Type of diode: TVS Mounting: THT Tolerance: ±5% Kind of package: reel; tape Case: DO15 Semiconductor structure: bidirectional Leakage current: 0.2mA Max. off-state voltage: 7.02V Breakdown voltage: 8.2V Max. forward impulse current: 50A Peak pulse power dissipation: 0.6kW |
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DBL104G C1 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT Case: DBL Kind of package: tube Max. forward impulse current: 40A Max. off-state voltage: 0.4kV Electrical mounting: THT Load current: 1A Type of bridge rectifier: single-phase |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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TSM126CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 24mA Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 800Ω Mounting: SMD Gate charge: 1.18nC Kind of channel: enhanced |
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BZT52C9V1 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 9.1V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.45µA |
на замовлення 2965 шт: термін постачання 21-30 дні (днів) |
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| TSM033NB04CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 77nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V |
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| TSM033NB04LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U Case: PDFN56U Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 3.3mΩ Power dissipation: 36W Gate charge: 79nC Polarisation: unipolar Drain current: 21A Kind of channel: enhanced Drain-source voltage: 40V |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Case: SOP8 Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 6mΩ Power dissipation: 7W Gate charge: 24nC Polarisation: unipolar Drain current: 30A Kind of channel: enhanced Drain-source voltage: 30V |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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| TSM045NB06CR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 104nC Kind of channel: enhanced |
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TSM048NB06LCR RLG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 16A Power dissipation: 45W Case: PDFN56U Gate-source voltage: ±20V On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 105nC Kind of channel: enhanced |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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| TLD6S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Max. forward impulse current: 271A
Breakdown voltage: 11.1...12.3V
Leakage current: 15µA
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Case: DO218AB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 11.1÷12.3V; 271A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Max. forward impulse current: 271A
Breakdown voltage: 11.1...12.3V
Leakage current: 15µA
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Case: DO218AB
товар відсутній
| TLD8S10AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Max. forward impulse current: 388A
Breakdown voltage: 11.1...12.3V
Leakage current: 15µA
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Case: DO218AB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 11.1÷12.3V; 388A; unidirectional; ±5%; DO218AB
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. off-state voltage: 10V
Semiconductor structure: unidirectional
Max. forward impulse current: 388A
Breakdown voltage: 11.1...12.3V
Leakage current: 15µA
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Case: DO218AB
товар відсутній
| RS1B M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
товар відсутній
| BZT52C2V7 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 18µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 18µA
на замовлення 990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.49 грн |
| 100+ | 3.69 грн |
| 250+ | 2.93 грн |
| 315+ | 2.61 грн |
| 865+ | 2.47 грн |
| TSM35N10CP ROG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 53.3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 53.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; 53.3W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Power dissipation: 53.3W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
товар відсутній
| GBU15L05 |
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 15A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 15A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
товар відсутній
| BZT52C5V6 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
на замовлення 820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 109+ | 3.55 грн |
| 121+ | 2.97 грн |
| 360+ | 2.29 грн |
| BZT52C5V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
на замовлення 970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.4 грн |
| 125+ | 2.97 грн |
| 250+ | 2.39 грн |
| TS2940CM33 RNG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; D2PAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: D2PAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; D2PAK; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: D2PAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
товар відсутній
| TS2940CM50 RNG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: D2PAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; D2PAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: D2PAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
на замовлення 50 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.87 грн |
| 5+ | 138.98 грн |
| 8+ | 105.31 грн |
| 22+ | 99.58 грн |
| TS2940CP33 ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±0.2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
на замовлення 114 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.5 грн |
| 5+ | 98.15 грн |
| 14+ | 62.33 грн |
| 37+ | 59.46 грн |
| TS2940CW33 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
на замовлення 411 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 84.09 грн |
| 6+ | 70.21 грн |
| 16+ | 52.3 грн |
| 44+ | 49.43 грн |
| TS2940CW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±0.2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±0.2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
на замовлення 215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.07 грн |
| 5+ | 75.94 грн |
| 15+ | 55.16 грн |
| 42+ | 52.3 грн |
| TS2940CW33 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
товар відсутній
| TS2940CW50 RPG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
товар відсутній
| TS2940CZ33 C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: TO220
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; TO220; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 1A
Case: TO220
Mounting: THT
Kind of package: tube
Operating temperature: -40...125°C
Tolerance: ±0.2%
Number of channels: 1
Input voltage: 0...26V
Manufacturer series: TS2940
на замовлення 56 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 148.13 грн |
| 5+ | 123.94 грн |
| 9+ | 93.13 грн |
| 25+ | 88.12 грн |
| TS2940CZ33 C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; TO220; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 3.3V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 8.3...26V
Manufacturer series: TS2940
товар відсутній
| TSM260P02CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.1A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 19.5nC
Kind of channel: enhanced
товар відсутній
| TS2940CZ50 C0G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; TO220; THT; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.8V
Output voltage: 5V
Output current: 0.8A
Case: TO220
Mounting: THT
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 10...26V
Manufacturer series: TS2940
товар відсутній
| BZT52B3V3-G RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 3.3V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 2845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.34 грн |
| 70+ | 5.3 грн |
| 100+ | 4.22 грн |
| 220+ | 3.8 грн |
| 500+ | 3.79 грн |
| 605+ | 3.6 грн |
| BZT52B3V3S RRG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 840 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.17 грн |
| 105+ | 3.5 грн |
| 250+ | 2.79 грн |
| 315+ | 2.65 грн |
| S3M V6G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Reverse recovery time: 1.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 60pF
Case: SMC
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 67 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 17.13 грн |
| 27+ | 13.54 грн |
| TESDU5V0 RGG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 75W; 5.1V; bidirectional; 0603; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 75W
Max. off-state voltage: 5V
Breakdown voltage: 5.1V
Semiconductor structure: bidirectional
Case: 0603
Mounting: SMD
Leakage current: 2µA
Kind of package: reel; tape
на замовлення 505 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.96 грн |
| 45+ | 8.38 грн |
| 100+ | 7.38 грн |
| 130+ | 6.32 грн |
| 360+ | 5.97 грн |
| TESD5V0L1UC RJG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 100W; 6÷9.8V; 3A; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.1µA
Case: DFN1006-2
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 6...9.8V
Max. forward impulse current: 3A
Peak pulse power dissipation: 100W
товар відсутній
| SMBJ5V0A-TSC |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 6.4÷7V; 68A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 68A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
на замовлення 480 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 12.61 грн |
| 80+ | 10.79 грн |
| 215+ | 10.2 грн |
| TLD5S30AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 3.6kW; 33.3÷36.8V; 74A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 3.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 74A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
| TLD6S30AH |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 95A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 4.6kW; 33.3÷36.8V; 95A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 4.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 95A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
| TLD8S30AH |
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 136A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 6.6kW; 33.3÷36.8V; 136A; unidirectional; ±5%; DO218AB
Type of diode: TVS
Peak pulse power dissipation: 6.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 136A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO218AB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
товар відсутній
| BZS55C5V6 RXG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| TSM4436CS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 1.6W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 1.6W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhanced
товар відсутній
| MBS6 RCG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 16.51 грн |
| 30+ | 12.9 грн |
| 85+ | 9.81 грн |
| MBS2 RCG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.8A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
на замовлення 300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 18.05 грн |
| 30+ | 13.25 грн |
| 90+ | 9.61 грн |
| 240+ | 9.08 грн |
| SMCJ36A |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 44.2V; 27A; unidirectional; ±5%; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36V
Breakdown voltage: 44.2V
Max. forward impulse current: 27A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| SD103CW RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123
Mounting: SMD
Max. forward impulse current: 1.5A
Semiconductor structure: single diode
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Case: SOD123
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 20V; 0.35A; SOD123
Mounting: SMD
Max. forward impulse current: 1.5A
Semiconductor structure: single diode
Load current: 0.35A
Max. forward voltage: 0.6V
Max. off-state voltage: 20V
Case: SOD123
Type of diode: Schottky rectifying
на замовлення 2400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 10.49 грн |
| 55+ | 6.59 грн |
| 100+ | 5.23 грн |
| 170+ | 5.01 грн |
| 460+ | 4.8 грн |
| 500+ | 4.73 грн |
| B0540W RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.62V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Power dissipation: 0.41W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.5A; SOD123; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.5A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.62V
Case: SOD123
Kind of package: reel; tape
Max. forward impulse current: 5.5A
Power dissipation: 0.41W
на замовлення 1519 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 76+ | 5.09 грн |
| 85+ | 4.23 грн |
| 100+ | 3.73 грн |
| 258+ | 3.22 грн |
| 711+ | 3.08 грн |
| TS5204CY50 RMG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT89
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT89; SMD; ±4%
Operating temperature: -40...125°C
Case: SOT89
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: TS5204
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Tolerance: ±4%
Output voltage: 5V
Output current: 80mA
Voltage drop: 0.6V
Type of integrated circuit: voltage regulator
товар відсутній
| TSM480P06CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -13A; 40W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -13A
Power dissipation: 40W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 22.4nC
Kind of channel: enhanced
товар відсутній
| TSM680P06CP ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -11A; 20W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -11A
Power dissipation: 20W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 68mΩ
Mounting: SMD
Gate charge: 16.4nC
Kind of channel: enhanced
товар відсутній
| BZS55C5V1 RXG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Leakage current: 0.1µA
товар відсутній
| TSM650P02CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 6.4nC
Kind of channel: enhanced
товар відсутній
| TSM650P03CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.6A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.6A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 8nC
Kind of channel: enhanced
на замовлення 130 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 51.69 грн |
| 14+ | 26.36 грн |
| 25+ | 18.48 грн |
| 64+ | 13.25 грн |
| TSM2328CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.5A; 1.38W; SOT23
Drain current: 1.5A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 1.38W
Polarisation: unipolar
Gate charge: 11.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SOT23
Drain-source voltage: 100V
товар відсутній
| TSM320N03CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 400mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Power dissipation: 0.4W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8.9nC
Kind of channel: enhanced
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 50.92 грн |
| 12+ | 31.38 грн |
| 25+ | 23.78 грн |
| 45+ | 18.98 грн |
| 122+ | 17.91 грн |
| TS1117BCP33 ROG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Manufacturer series: TS1117B
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; DPAK; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 3.3V
Output current: 1A
Case: DPAK
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.8...12V
Manufacturer series: TS1117B
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 47.83 грн |
| 11+ | 32.67 грн |
| 25+ | 29.37 грн |
| 39+ | 21.35 грн |
| RS1AL R2 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.8A; 150ns; subSMA; Ufmax: 1.3V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.8A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Capacitance: 10pF
Case: subSMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 39 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 9.31 грн |
| TSM210N02CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.2A; 1.56W; SOT23
Mounting: SMD
Gate charge: 5.8nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±10V
Polarisation: unipolar
Power dissipation: 1.56W
Type of transistor: N-MOSFET
On-state resistance: 21mΩ
Drain current: 4.2A
Drain-source voltage: 20V
товар відсутній
| TSM085P03CS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.8W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 56nC
Kind of channel: enhanced
товар відсутній
| TSM089N08LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 17W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Power dissipation: 17W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 8.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of channel: enhanced
товар відсутній
| SK84C V7G |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 8A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 150A
на замовлення 491 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 30.86 грн |
| 15+ | 25.58 грн |
| 25+ | 23 грн |
| 39+ | 21.35 грн |
| 100+ | 20.42 грн |
| 108+ | 20.2 грн |
| P6SMB15CA |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
товар відсутній
| TSM4925DCS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -7.1A; 1.3W; SOP8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Power dissipation: 1.3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 70nC
Kind of channel: enhanced
товар відсутній
| P6KE8.2CA R0 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 50A
Peak pulse power dissipation: 0.6kW
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 8.2V; 50A; bidirectional; ±5%; DO15; 600W; reel,tape
Type of diode: TVS
Mounting: THT
Tolerance: ±5%
Kind of package: reel; tape
Case: DO15
Semiconductor structure: bidirectional
Leakage current: 0.2mA
Max. off-state voltage: 7.02V
Breakdown voltage: 8.2V
Max. forward impulse current: 50A
Peak pulse power dissipation: 0.6kW
товар відсутній
| DBL104G C1 |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 1A; Ifsm: 40A; DBL; THT
Case: DBL
Kind of package: tube
Max. forward impulse current: 40A
Max. off-state voltage: 0.4kV
Electrical mounting: THT
Load current: 1A
Type of bridge rectifier: single-phase
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 17.98 грн |
| 25+ | 16.19 грн |
| 55+ | 15.18 грн |
| 100+ | 15.04 грн |
| 150+ | 14.36 грн |
| TSM126CX RFG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24mA; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24mA
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 800Ω
Mounting: SMD
Gate charge: 1.18nC
Kind of channel: enhanced
товар відсутній
| BZT52C9V1 RHG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 9.1V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 9.1V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.45µA
на замовлення 2965 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 4.4 грн |
| 125+ | 2.97 грн |
| 250+ | 2.36 грн |
| 1000+ | 2.32 грн |
| TSM033NB04CR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 77nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
| TSM033NB04LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 21A; 36W; PDFN56U
Case: PDFN56U
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Power dissipation: 36W
Gate charge: 79nC
Polarisation: unipolar
Drain current: 21A
Kind of channel: enhanced
Drain-source voltage: 40V
товар відсутній
| TSM042N03CS RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Power dissipation: 7W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhanced
Drain-source voltage: 30V
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 59.95 грн |
| TSM045NB06CR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 104nC
Kind of channel: enhanced
товар відсутній
| TSM048NB06LCR RLG |
|
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; 45W; PDFN56U
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 16A
Power dissipation: 45W
Case: PDFN56U
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 105nC
Kind of channel: enhanced
на замовлення 4 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 165.87 грн |