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SF16G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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HER1007GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
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SS36 SS36 TAIWAN SEMICONDUCTOR SS36.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BAT54W RFG
+1
 		BAT54W RFG TAIWAN SEMICONDUCTOR BAT54W SERIES_D2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
50+8.59 грн
72+5.58 грн
120+3.33 грн
Мінімальне замовлення: 50
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MUR820 MUR820 TAIWAN SEMICONDUCTOR MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
9+50.66 грн
12+34.13 грн
50+29.34 грн
Мінімальне замовлення: 9
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MUR820H TAIWAN SEMICONDUCTOR MUR820%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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SMAJ48A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 5399_SMAJ48A%20SMA.PDF SMAJ48A000S0CX.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing 824500481.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf smaj%20series(400w,5v_440v).pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ43CA TAIWAN SEMICONDUCTOR 824501431.pdf SMAJ.pdf SMAJx.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1PGSMB5934 1PGSMB5934 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
15+30.06 грн
17+24.80 грн
100+18.98 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ES2J TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TESDH5V0U04P2Q1 RNG TAIWAN SEMICONDUCTOR TESDH5V0U04P2Q1 _A2110.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG ABS6 RGG TAIWAN SEMICONDUCTOR ABS2_ser.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
15+28.34 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
KBU802G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU803G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU804G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU805G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU807G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
130+3.39 грн
155+2.59 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
BZX55C24 R0G BZX55C24 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
130+3.39 грн
155+2.59 грн
500+2.28 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
SFT16G TAIWAN SEMICONDUCTOR SFT11G SERIES_J2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
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S3M V6G S3M V6G TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
23+18.89 грн
29+13.95 грн
Мінімальне замовлення: 23
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BZT52C18 RHG BZT52C18 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)
105+4.12 грн
145+2.79 грн
250+2.50 грн
Мінімальне замовлення: 105
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BZT52C13 RHG BZT52C13 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
50+8.59 грн
79+5.10 грн
126+3.17 грн
250+2.70 грн
500+2.52 грн
Мінімальне замовлення: 50
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BZT52C12 RHG BZT52C12 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
50+8.59 грн
82+4.86 грн
120+3.33 грн
250+2.87 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C8V2 RHG BZT52C8V2 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
Zener current: 5mA
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
105+4.12 грн
145+2.79 грн
250+2.52 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52B13-G RHG BZT52B13-G RHG TAIWAN SEMICONDUCTOR BZT52B2V4-G SERIES_H2002.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
45+9.79 грн
85+4.98 грн
105+3.96 грн
500+3.82 грн
Мінімальне замовлення: 45
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TSG65N110CE RVG TAIWAN SEMICONDUCTOR TSG65N110CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TAIWAN SEMICONDUCTOR TSG65N195CE_A2303.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM060NB06CZ C0G TAIWAN SEMICONDUCTOR TSM060NB06CZ_A2008.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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TSM060NB06LCZ C0G TAIWAN SEMICONDUCTOR TSM060NB06LCZ_A2009.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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5.0SMDJ30AH TAIWAN SEMICONDUCTOR 5.0SMDJH SERIES_A2102.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 5.0SMDJ
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MUR120S TAIWAN SEMICONDUCTOR MUR105S SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH TAIWAN SEMICONDUCTOR MUR105SH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZW04-64 TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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BZW04-64B TAIWAN SEMICONDUCTOR bzw045v8.pdf Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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SMCJ24CA TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MUR860 MUR860 TAIWAN SEMICONDUCTOR MUR8x0.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TAIWAN SEMICONDUCTOR TSS70U_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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HER1006GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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HER1008GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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SS26 TAIWAN SEMICONDUCTOR pdf.php?pn=SS26 5399_SS26%20SMA.PDF 3372_SS26A00000S060.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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P6SMB24CA M4G P6SMB24CA M4G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 19A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Case: SMB
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
35+12.04 грн
100+11.08 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
TSS0230LU RGG TAIWAN SEMICONDUCTOR TSS0230LU_C1601.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13 SS13 TAIWAN SEMICONDUCTOR ss19-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)
42+10.30 грн
46+8.69 грн
100+7.34 грн
186+5.02 грн
510+4.78 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SS13M SS13M TAIWAN SEMICONDUCTOR SS13M%20SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
16+27.48 грн
32+12.68 грн
100+8.05 грн
500+6.06 грн
1000+5.34 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SR1060 C0 SR1060 C0 TAIWAN SEMICONDUCTOR Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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TSM500P02CX RFG TSM500P02CX RFG TAIWAN SEMICONDUCTOR TSM500P02CX_B1811.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 474 шт:
термін постачання 21-30 дні (днів)
17+25.76 грн
27+15.15 грн
50+15.07 грн
Мінімальне замовлення: 17
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ES2B TAIWAN SEMICONDUCTOR es2d-d.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2_1.pdf ES2A SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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TS5213CX533 RFG TS5213CX533 RFG TAIWAN SEMICONDUCTOR TS5213_H2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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TS5213CX550 RFG TS5213CX550 RFG TAIWAN SEMICONDUCTOR TS5213_H2206.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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P4SMA100A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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BZX85C6V8 R0G BZX85C6V8 R0G TAIWAN SEMICONDUCTOR BZX85C3V3 SERIES_H2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
65+6.87 грн
100+5.34 грн
250+4.70 грн
Мінімальне замовлення: 65
В кошику  од. на суму  грн.
TSM2323CX RFG TSM2323CX RFG TAIWAN SEMICONDUCTOR TSM2323_F15.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
6+72.99 грн
8+56.61 грн
50+33.97 грн
100+29.02 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMF12A TAIWAN SEMICONDUCTOR tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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ES2G TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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ES2GAH TAIWAN SEMICONDUCTOR ES2AAH SERIES_A2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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ES2GAL TAIWAN SEMICONDUCTOR ES2BAL SERIES_D2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
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ES2GALH TAIWAN SEMICONDUCTOR ES2BALH SERIES_B2103.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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SF16G SF11G SERIES_H2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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HER1007GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
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SS36 SS36.pdf
SS36
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BAT54W RFG BAT54W SERIES_D2102.pdf
BAT54W RFG
+1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.59 грн
72+5.58 грн
120+3.33 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
MUR820 MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf
MUR820
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.66 грн
12+34.13 грн
50+29.34 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
MUR820H MUR820%20SERIES_K2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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SMAJ48A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 5399_SMAJ48A%20SMA.PDF SMAJ48A000S0CX.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing 824500481.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf smaj%20series(400w,5v_440v).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ43CA 824501431.pdf SMAJ.pdf SMAJx.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1PGSMB5934
1PGSMB5934
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+30.06 грн
17+24.80 грн
100+18.98 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ES2J ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A 1N4736AT-D.PDF 1N47xxA-SERIES.pdf FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N4740A SERIES_O2104.pdf 1N4728AG_1N4764AG_e3.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 18V
Zener current: 14mA
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
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TESDH5V0U04P2Q1 RNG TESDH5V0U04P2Q1 _A2110.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Application: HDMI; USB
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG ABS2_ser.pdf
ABS6 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Case: ABS
Max. off-state voltage: 0.6kV
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.34 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
KBU802G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU803G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU804G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU805G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU807G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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BZX55C22 R0G
BZX55C22 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
130+3.39 грн
155+2.59 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
BZX55C24 R0G
BZX55C24 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
130+3.39 грн
155+2.59 грн
500+2.28 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
SFT16G SFT11G SERIES_J2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
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S3M V6G
S3M V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.89 грн
29+13.95 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BZT52C18 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C18 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.12 грн
145+2.79 грн
250+2.50 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C13 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C13 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.59 грн
79+5.10 грн
126+3.17 грн
250+2.70 грн
500+2.52 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C12 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C12 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Mounting: SMD
на замовлення 485 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.59 грн
82+4.86 грн
120+3.33 грн
250+2.87 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZT52C8V2 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C8V2 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
Zener current: 5mA
на замовлення 620 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.12 грн
145+2.79 грн
250+2.52 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52B13-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B13-G RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
45+9.79 грн
85+4.98 грн
105+3.96 грн
500+3.82 грн
Мінімальне замовлення: 45
В кошику  од. на суму  грн.
TSG65N110CE RVG TSG65N110CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSG65N195CE RVG TSG65N195CE_A2303.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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TSM060NB06CZ C0G TSM060NB06CZ_A2008.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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TSM060NB06LCZ C0G TSM060NB06LCZ_A2009.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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5.0SMDJ30AH 5.0SMDJH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 5.0SMDJ
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MUR120S MUR105S SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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MUR120SH MUR105SH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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BZW04-64 bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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BZW04-64B bzw045v8.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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SMCJ24CA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A63B309C900D6&compId=SMCJ.pdf?ci_sign=f57d70eedacb7e3a3cd4404deb2f203658f82b8f
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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MUR860 MUR8x0.pdf
MUR860
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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TSS70U RGG TSS70U_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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HER1006GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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HER1008GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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SS26 pdf.php?pn=SS26 5399_SS26%20SMA.PDF 3372_SS26A00000S060.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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P6SMB24CA M4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB24CA M4G
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 19A
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Peak pulse power dissipation: 0.6kW
Kind of package: reel; tape
Semiconductor structure: bidirectional
Manufacturer series: P6SMB
Case: SMB
Mounting: SMD
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
35+12.04 грн
100+11.08 грн
Мінімальне замовлення: 35
В кошику  од. на суму  грн.
TSS0230LU RGG TSS0230LU_C1601.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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SS13 ss19-d.pdf
SS13
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.30 грн
46+8.69 грн
100+7.34 грн
186+5.02 грн
510+4.78 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SS13M SS13M%20SERIES_O2103.pdf
SS13M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
16+27.48 грн
32+12.68 грн
100+8.05 грн
500+6.06 грн
1000+5.34 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
SR1060 C0
SR1060 C0
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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TSM500P02CX RFG TSM500P02CX_B1811.pdf
TSM500P02CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 474 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.76 грн
27+15.15 грн
50+15.07 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
ES2B es2d-d.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2_1.pdf ES2A SERIES_L2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 35ns; SMB; Ufmax: 950mV; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Reverse recovery time: 35ns
Max. forward voltage: 0.95V
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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TS5213CX533 RFG TS5213_H2206.pdf
TS5213CX533 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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TS5213CX550 RFG TS5213_H2206.pdf
TS5213CX550 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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P4SMA100A littelfuse_tvs_diode_p4sma_datasheet.pdf.pdf eaton-p4sma-tvs-diode-power-esd-suppressor-data-sheet.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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BZX85C6V8 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C6V8 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Mounting: THT
Tolerance: ±5%
Kind of package: tape
Case: DO41
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 35mA
на замовлення 400 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
65+6.87 грн
100+5.34 грн
250+4.70 грн
Мінімальне замовлення: 65
В кошику  од. на суму  грн.
TSM2323CX RFG TSM2323_F15.pdf
TSM2323CX RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: tape
Case: SOT23
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Gate charge: 19nC
On-state resistance: 39mΩ
Power dissipation: 0.8W
Gate-source voltage: ±8V
на замовлення 224 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+72.99 грн
8+56.61 грн
50+33.97 грн
100+29.02 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
SMF12A tvs-diodes-smf-datasheet?assetguid=7eb8a5b6-bdd0-4561-8f19-0c3cc6f9b2af
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 10.1A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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ES2G ES2(A-J)%20N0160%20REV.D.pdf ES2_1.pdf ES2A SERIES_L2102.pdf ES2G.pdf 5399_ES2G%20SMA.PDF es2a.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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ES2GAH ES2AAH SERIES_A2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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ES2GAL ES2BAL SERIES_D2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
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ES2GALH ES2BALH SERIES_B2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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