Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66425) > Сторінка 1100 з 1108
Фото | Назва | Виробник | Інформація |
Доступність |
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MBRAD20200H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 200V Load current: 20A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MBRAD5100H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 100V Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MBRAD5150H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 150V Load current: 5A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RMB4S | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RMB2S | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 30A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1PGSMB5929 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 15V; 100mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 15V Zener current: 100mA Kind of package: reel; tape Case: SMB Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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BZD27C15P | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 15V; SMD; reel,tape; subSMA; single diode Type of diode: Zener Power dissipation: 1W Zener voltage: 15V Kind of package: reel; tape Case: subSMA Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode |
на замовлення 259 шт: термін постачання 21-30 дні (днів) |
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BZT52C15 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
на замовлення 765 шт: термін постачання 21-30 дні (днів) |
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BZT52C15 RH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
на замовлення 363 шт: термін постачання 21-30 дні (днів) |
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TS393CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA Type of integrated circuit: comparator Case: SOP8 Mounting: SMT Operating temperature: 0...70°C Kind of package: reel; tape Number of comparators: 2 Input offset voltage: 5mV Delay time: 1.3µs Kind of comparator: low-power Input offset current: 50nA Voltage supply range: ± 1...18V DC; 2...36V DC |
на замовлення 78 шт: термін постачання 21-30 дні (днів) |
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TS2951CS50 RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 5V Output current: 0.15A Case: SOP8 Mounting: SMD Manufacturer series: TS2951 Operating temperature: -40...125°C Tolerance: ±0.1% Number of channels: 1 Input voltage: 6...30V |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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TSM042N03CS RLG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8 Case: SOP8 Mounting: SMD Kind of package: tape Power dissipation: 7W Polarisation: unipolar Gate charge: 24nC Kind of channel: enhancement Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 30A On-state resistance: 6mΩ Type of transistor: N-MOSFET |
на замовлення 76 шт: термін постачання 21-30 дні (днів) |
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MBRAD8100H | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 100V Load current: 8A Semiconductor structure: single diode Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMF33A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 3.8A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ28A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ28AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28V Breakdown voltage: 31.1V Max. forward impulse current: 8.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52C12 RH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA |
на замовлення 148 шт: термін постачання 21-30 дні (днів) |
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BZT52C12 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA |
на замовлення 755 шт: термін постачання 21-30 дні (днів) |
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SMAJ5.0A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMCJ24A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM100N06CZ C0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 107W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 6.7mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SMAJ36A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ36AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 6.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TPMR10DH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 10A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO277A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ33CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMAJ33CAH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33V Breakdown voltage: 36.7V Max. forward impulse current: 7.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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P4SMA39CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
P4SMA39CAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1V Max. forward impulse current: 7.7A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: P4SMA Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LL5817 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: MELF plastic Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Kind of package: reel; tape Max. forward voltage: 0.75V |
на замовлення 877 шт: термін постачання 21-30 дні (днів) |
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LL5818 L0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Case: MELF plastic Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Max. forward voltage: 0.875V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Type of diode: Schottky rectifying |
на замовлення 281 шт: термін постачання 21-30 дні (днів) |
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LL5818 L0 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape Case: MELF plastic Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 25A Type of diode: Schottky rectifying |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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BZT52C7V5 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 7.5V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 0.9µA Zener current: 5mA |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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TSM2N7002AKCX RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 134mA Power dissipation: 71mW Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 1.65nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SR506 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Case: DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU805 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 8A Max. forward impulse current: 200A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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TSM170N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Power dissipation: 46W Case: IPAK SL Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: THT Gate charge: 15nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P6SMB150CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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P6SMB39A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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SMAJ24AH | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 24V Breakdown voltage: 26.7V Max. forward impulse current: 10.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS34118CS28 RDG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system Type of integrated circuit: driver Case: SOP28 Mounting: SMD Integrated circuit features: voice switched speakerphone system Kind of package: reel; tape Supply voltage: 3...6.5V DC |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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BZS55C8V2 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Zener current: 5mA Leakage current: 0.1µA |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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BZT52C8V2 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 630nA |
на замовлення 650 шт: термін постачання 21-30 дні (днів) |
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BAT43W RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky switching Type of diode: Schottky switching |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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RS1MFL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 230000 шт: термін постачання 21-30 дні (днів) |
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TSM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56 Mounting: SMD Drain-source voltage: 40V Drain current: 8A On-state resistance: 15mΩ Type of transistor: N-MOSFET x2 Power dissipation: 8W Polarisation: unipolar Kind of package: tape Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
1V5KE33A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 1250 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V6 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 4.5µA Zener current: 5mA |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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SMBJ12A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SK56CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 120A Kind of package: reel; tape Application: automotive industry |
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MBRF10L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
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MBRF10H100CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
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SMBJ60CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
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TS317LCS RLG | TAIWAN SEMICONDUCTOR |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8 Case: SOP8 Mounting: SMD Output voltage: 1.25...37V Output current: 0.1A Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 40V Kind of voltage regulator: adjustable; linear Operating temperature: -20...125°C Tolerance: ±4% |
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TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Case: IPAK Drain-source voltage: 60V Drain current: 19A On-state resistance: 34mΩ Power dissipation: 40W Polarisation: unipolar Kind of package: tube Gate charge: 16.6nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
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TSM340N06CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 17500 шт: термін постачання 21-30 дні (днів) |
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SMCJ30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
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В кошику од. на суму грн. | |||||||||||||
SMCJ30AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
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TSCR400CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
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TSCR402CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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1.5KE400CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Max. off-state voltage: 548V Semiconductor structure: bidirectional Max. forward impulse current: 2.8A Breakdown voltage: 400V Leakage current: 1µA Type of diode: TVS Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO201 Tolerance: ±5% |
на замовлення 37 шт: термін постачання 21-30 дні (днів) |
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MBRAD20200H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 200V; 20A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 20A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MBRAD5100H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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MBRAD5150H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 150V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 150V
Load current: 5A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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RMB4S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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RMB2S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 30A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 30A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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1PGSMB5929 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 100mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 100mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 15V; 100mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 15V
Zener current: 100mA
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 29.29 грн |
20+ | 19.43 грн |
25+ | 18.42 грн |
BZD27C15P |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: subSMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 15V; SMD; reel,tape; subSMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 15V
Kind of package: reel; tape
Case: subSMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
на замовлення 259 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.90 грн |
34+ | 11.73 грн |
100+ | 9.09 грн |
BZT52C15 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 765 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
105+ | 4.02 грн |
145+ | 2.72 грн |
250+ | 2.44 грн |
340+ | 2.43 грн |
BZT52C15 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 363 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
42+ | 10.04 грн |
63+ | 6.22 грн |
103+ | 3.81 грн |
341+ | 2.67 грн |
TS393CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Type of integrated circuit: comparator
Case: SOP8
Mounting: SMT
Operating temperature: 0...70°C
Kind of package: reel; tape
Number of comparators: 2
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: low-power
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; 1.3us; SMT; SOP8; reel,tape; 50nA
Type of integrated circuit: comparator
Case: SOP8
Mounting: SMT
Operating temperature: 0...70°C
Kind of package: reel; tape
Number of comparators: 2
Input offset voltage: 5mV
Delay time: 1.3µs
Kind of comparator: low-power
Input offset current: 50nA
Voltage supply range: ± 1...18V DC; 2...36V DC
на замовлення 78 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
19+ | 22.84 грн |
28+ | 13.99 грн |
76+ | 11.94 грн |
TS2951CS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.15A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2951
Operating temperature: -40...125°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 6...30V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 5V
Output current: 0.15A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2951
Operating temperature: -40...125°C
Tolerance: ±0.1%
Number of channels: 1
Input voltage: 6...30V
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 110.46 грн |
9+ | 44.13 грн |
25+ | 35.43 грн |
28+ | 33.26 грн |
TSM042N03CS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; 7W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: tape
Power dissipation: 7W
Polarisation: unipolar
Gate charge: 24nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 6mΩ
Type of transistor: N-MOSFET
на замовлення 76 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 61.50 грн |
23+ | 39.54 грн |
64+ | 37.38 грн |
MBRAD8100H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 100V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 100V
Load current: 8A
Semiconductor structure: single diode
Kind of package: reel; tape
Application: automotive industry
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SMF33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 36.7V; 3.8A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 3.8A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
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SMAJ28A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ28AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 31.1V; 8.8A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1V
Max. forward impulse current: 8.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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BZT52C12 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 148 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
148+ | 2.33 грн |
BZT52C12 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 755 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
50+ | 8.37 грн |
82+ | 4.74 грн |
120+ | 3.25 грн |
250+ | 2.80 грн |
340+ | 2.67 грн |
500+ | 2.50 грн |
SMAJ5.0A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.4V; 43.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMCJ24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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TSM100N06CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
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SMAJ36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 40V; 6.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 6.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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TPMR10DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 10A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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SMAJ33CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ33CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 36.7V; 7.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 7.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
на замовлення 280 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.63 грн |
19+ | 21.21 грн |
25+ | 16.24 грн |
100+ | 10.57 грн |
123+ | 7.38 грн |
P4SMA39CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
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P4SMA39CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 37.1V; 7.7A; bidirectional; SMA; P4SMA
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: P4SMA
Application: automotive industry
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LL5817 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Kind of package: reel; tape
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: MELF plastic
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Kind of package: reel; tape
Max. forward voltage: 0.75V
на замовлення 877 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.43 грн |
67+ | 13.68 грн |
183+ | 12.90 грн |
LL5818 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Max. forward voltage: 0.875V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
на замовлення 281 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.45 грн |
17+ | 23.70 грн |
50+ | 18.34 грн |
138+ | 17.41 грн |
LL5818 L0 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; MELF plastic; SMD; 30V; 1A; reel,tape
Case: MELF plastic
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 25A
Type of diode: Schottky rectifying
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.77 грн |
25+ | 23.70 грн |
50+ | 18.49 грн |
BZT52C7V5 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 0.9µA
Zener current: 5mA
на замовлення 710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.77 грн |
125+ | 3.22 грн |
250+ | 2.64 грн |
315+ | 2.63 грн |
TSM2N7002AKCX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 134mA; 71mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 134mA
Power dissipation: 71mW
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 1.65nC
Kind of package: tape
Kind of channel: enhancement
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SR506 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 5A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Case: DO201AD
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GBU805 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 80.81 грн |
15+ | 62.02 грн |
TSM170N06CH X0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; 46W; IPAK SL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Power dissipation: 46W
Case: IPAK SL
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhancement
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P6SMB150CA | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 150V; 3A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 32.63 грн |
16+ | 24.32 грн |
25+ | 20.33 грн |
78+ | 11.76 грн |
213+ | 11.11 грн |
P6SMB39A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 30.12 грн |
20+ | 20.12 грн |
95+ | 9.63 грн |
261+ | 9.09 грн |
SMAJ24AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 26.7V; 10.3A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Max. forward impulse current: 10.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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TS34118CS28 RDG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Case: SOP28
Mounting: SMD
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
Supply voltage: 3...6.5V DC
Category: RTV - audio integrated circuits
Description: IC: driver; SOP28; 3÷6.5VDC; voice switched speakerphone system
Type of integrated circuit: driver
Case: SOP28
Mounting: SMD
Integrated circuit features: voice switched speakerphone system
Kind of package: reel; tape
Supply voltage: 3...6.5V DC
на замовлення 16 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 235.14 грн |
5+ | 196.58 грн |
6+ | 156.14 грн |
BZS55C8V2 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
170+ | 2.51 грн |
185+ | 2.13 грн |
BZT52C8V2 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 630nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 630nA
на замовлення 650 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
105+ | 4.02 грн |
145+ | 2.72 грн |
250+ | 2.44 грн |
BAT43W RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 1.15 грн |
RS1MFL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 230000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.74 грн |
TSM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
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1V5KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 1250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1250+ | 17.91 грн |
BZT52C3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.77 грн |
120+ | 3.11 грн |
SMBJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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SK56CH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
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MBRF10L100CT |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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MBRF10H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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SMBJ60CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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TS317LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Output voltage: 1.25...37V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Operating temperature: -20...125°C
Tolerance: ±4%
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Output voltage: 1.25...37V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Operating temperature: -20...125°C
Tolerance: ±4%
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TSM340N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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TSM340N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.39 грн |
SMCJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSCR400CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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TSCR402CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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1.5KE400CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Max. off-state voltage: 548V
Semiconductor structure: bidirectional
Max. forward impulse current: 2.8A
Breakdown voltage: 400V
Leakage current: 1µA
Type of diode: TVS
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201
Tolerance: ±5%
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Max. off-state voltage: 548V
Semiconductor structure: bidirectional
Max. forward impulse current: 2.8A
Breakdown voltage: 400V
Leakage current: 1µA
Type of diode: TVS
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO201
Tolerance: ±5%
на замовлення 37 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 57.74 грн |
10+ | 44.29 грн |
32+ | 28.83 грн |