Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66224) > Сторінка 1100 з 1104

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5.0SMDJ30A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ36A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ33A TAIWAN SEMICONDUCTOR littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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SMBJ10A TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM60NB150CF C0G TSM60NB150CF C0G TAIWAN SEMICONDUCTOR TSM60NB150CF_A1705.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
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TSM60NE285CH C5G TAIWAN SEMICONDUCTOR pdf.php?pn=TSM60NE285CH Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
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BZX55C11 R0G BZX55C11 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 415 шт:
термін постачання 21-30 дні (днів)
140+3.16 грн
165+2.43 грн
Мінімальне замовлення: 140
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TS6P05G TS6P05G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F682B8D6340D6&compId=TS6P07G_ser.pdf?ci_sign=256df028d2e4a86def2cb69fe6492e074323ce85 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
4+109.40 грн
6+76.19 грн
10+67.46 грн
15+63.49 грн
16+61.11 грн
42+57.93 грн
Мінімальне замовлення: 4
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P6SMB10CA R4 P6SMB10CA R4 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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BZX55B10 A0G BZX55B10 A0G TAIWAN SEMICONDUCTOR BZX55B2V4 SERIES_G2301.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)
125+3.42 грн
135+3.01 грн
390+2.40 грн
1070+2.26 грн
Мінімальне замовлення: 125
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MBR1660 MBR1660 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EBDAD8AE8B4469&compId=MBR1660.pdf?ci_sign=d666f832ccca9c4f290a758b13faac029a6b0944 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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SR310 SR310 TAIWAN SEMICONDUCTOR SR302 SERIES_J2105.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
13+33.33 грн
14+28.57 грн
15+26.67 грн
80+11.67 грн
Мінімальне замовлення: 13
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SF1604PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1604GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1606GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
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SF1606PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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SF1608GH TAIWAN SEMICONDUCTOR SF1601G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF1608PTH TAIWAN SEMICONDUCTOR SF1601PT SERIES_G2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF16G TAIWAN SEMICONDUCTOR SF11G SERIES_H2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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TUAU10MH TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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UG1007GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; TO220AB; automotive industry
Case: TO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 500V
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YBS3007G RAG TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAD8186EB2672A0D2&compId=YBS300xG.pdf?ci_sign=7faf374e49fb7234cf5a2a0d5040b4a0ab291a2b Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; YBS
Case: YBS
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 3A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Max. forward impulse current: 110A
Kind of package: reel; tape
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HER1007GH TAIWAN SEMICONDUCTOR HER1001G SERIES_I2104.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
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HERF1007GAH TAIWAN SEMICONDUCTOR HERF1007GA SERIES_B2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; automotive industry
Case: ITO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
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HERF1007GH TAIWAN SEMICONDUCTOR HERF1001G SERIES_I2105.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; automotive industry
Case: ITO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
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HERAF1007GH TAIWAN SEMICONDUCTOR Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 10A; ITO220AC; automotive industry
Case: ITO220AC
Application: automotive industry
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.8kV
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SS36 SS36 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A9EC4D6952469&compId=SS36.pdf?ci_sign=3ba15ca933a1ba610194514f8bdb00d7e5d5923c Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BAT54W RFG
+1
 		BAT54W RFG TAIWAN SEMICONDUCTOR BAT54W SERIES_D2102.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
72+5.56 грн
120+3.31 грн
327+2.86 грн
898+2.70 грн
Мінімальне замовлення: 50
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BZX55B3V6 A0G BZX55B3V6 A0G TAIWAN SEMICONDUCTOR pdf.php?pn=BZX55B3V6 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
на замовлення 815 шт:
термін постачання 21-30 дні (днів)
125+3.42 грн
135+3.01 грн
390+2.40 грн
Мінімальне замовлення: 125
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MBR745 MBR745 TAIWAN SEMICONDUCTOR MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Forward voltage at If: 840mV
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MBR745 MBR745 TAIWAN SEMICONDUCTOR MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
8+57.26 грн
10+49.60 грн
35+27.30 грн
94+25.79 грн
Мінімальне замовлення: 8
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SMAJ40A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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MUR820 MUR820 TAIWAN SEMICONDUCTOR MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
9+50.42 грн
12+33.97 грн
50+29.20 грн
Мінімальне замовлення: 9
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MUR820H TAIWAN SEMICONDUCTOR MUR820%20SERIES_K2103.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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SMAJ48A TAIWAN SEMICONDUCTOR tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 5399_SMAJ48A%20SMA.PDF SMAJ48A000S0CX.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing 824500481.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf smaj%20series(400w,5v_440v).pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ43CA TAIWAN SEMICONDUCTOR 824501431.pdf SMAJ.pdf SMAJx.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1PGSMB5934 1PGSMB5934 TAIWAN SEMICONDUCTOR Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
15+29.91 грн
17+24.68 грн
100+18.89 грн
Мінімальне замовлення: 15
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ES2J TAIWAN SEMICONDUCTOR ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A TAIWAN SEMICONDUCTOR 1N4736AT-D.PDF FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4740A SERIES_O2104.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N47xxA-SERIES.pdf 1N4728AG_1N4764AG_e3.pdf Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Kind of package: tape
Case: DO41
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Zener current: 14mA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
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TESDH5V0U04P2Q1 RNG TAIWAN SEMICONDUCTOR TESDH5V0U04P2Q1 _A2110.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG ABS6 RGG TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487 Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
15+28.20 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
KBU802G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU803G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU804G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU805G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU807G TAIWAN SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SS22M SS22M TAIWAN SEMICONDUCTOR SS22M SERIES_M2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: microSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
32+13.67 грн
39+10.32 грн
100+7.78 грн
175+5.32 грн
478+5.08 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SS22L TAIWAN SEMICONDUCTOR SS22L SERIES_O2103.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: subSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
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BZX55C22 R0G BZX55C22 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C24 R0G BZX55C24 R0G TAIWAN SEMICONDUCTOR Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
130+3.38 грн
155+2.58 грн
500+2.27 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
TS25P07G TAIWAN SEMICONDUCTOR TS25P01G SERIES_Q2203.pdf Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 0.3kA
Case: TS-6P
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. load current: 25A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
4+140.16 грн
Мінімальне замовлення: 4
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SR110 TAIWAN SEMICONDUCTOR SR102 SERIES_G2104.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. off-state voltage: 100V
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SFT16G TAIWAN SEMICONDUCTOR pdf.php?pn=SFT16G Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
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S3M V6G S3M V6G TAIWAN SEMICONDUCTOR Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
23+18.80 грн
29+13.89 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BZX84C10 RFG BZX84C10 RFG TAIWAN SEMICONDUCTOR BZX84C2V4%20SERIES_F2001.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
70+6.32 грн
115+3.60 грн
330+2.83 грн
910+2.67 грн
Мінімальне замовлення: 70
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BZT52C18 RHG BZT52C18 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C30 RHG BZT52C30 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C36 RHG BZT52C36 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 948 шт:
термін постачання 21-30 дні (днів)
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C13 RHG BZT52C13 RHG TAIWAN SEMICONDUCTOR BZT52C2V4 SERIES_G1804.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
50+8.55 грн
79+5.08 грн
126+3.16 грн
250+2.68 грн
500+2.51 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
5.0SMDJ30A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ36A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68 5-0smdj.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 40V; 86.1A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 86.1A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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5.0SMDJ33A littelfuse_tvs_diode_5_0smdj_datasheet.pdf?assetguid=2b2f4a8c-2e81-4894-8d41-3d748bb79e68
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 36.7V; 93.9A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7V
Max. forward impulse current: 93.9A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
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SMBJ10A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFA48A40769A37C0D6&compId=SMBJ.pdf?ci_sign=f7e57a87cd92ade00cbdb8926a67d1e0acfe2d1c
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 37A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 37A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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TSM60NB150CF C0G TSM60NB150CF_A1705.pdf
TSM60NB150CF C0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 43nC
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TSM60NE285CH C5G pdf.php?pn=TSM60NE285CH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 139W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 139W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 0.285Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
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BZX55C11 R0G
BZX55C11 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 415 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
140+3.16 грн
165+2.43 грн
Мінімальне замовлення: 140
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TS6P05G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F682B8D6340D6&compId=TS6P07G_ser.pdf?ci_sign=256df028d2e4a86def2cb69fe6492e074323ce85
TS6P05G
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 6A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 6A
Max. forward impulse current: 150A
Version: flat
Case: TS-6P
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
на замовлення 48 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.40 грн
6+76.19 грн
10+67.46 грн
15+63.49 грн
16+61.11 грн
42+57.93 грн
Мінімальне замовлення: 4
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P6SMB10CA R4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBDFBA1AE72EE80D6&compId=P6SMB_ser.pdf?ci_sign=c8b607216bfee037b5cb6205caa00e1fd66bfdb5
P6SMB10CA R4
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 10V; 43A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 8.55V
Breakdown voltage: 10V
Max. forward impulse current: 43A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 10µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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BZX55B10 A0G BZX55B2V4 SERIES_G2301.pdf
BZX55B10 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 0.1µA
на замовлення 1175 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.42 грн
135+3.01 грн
390+2.40 грн
1070+2.26 грн
Мінімальне замовлення: 125
В кошику  од. на суму  грн.
MBR1660 pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EBDAD8AE8B4469&compId=MBR1660.pdf?ci_sign=d666f832ccca9c4f290a758b13faac029a6b0944
MBR1660
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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SR310 SR302 SERIES_J2105.pdf
SR310
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 3A; DO201AD; Ufmax: 0.85V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Max. forward voltage: 0.85V
Max. forward impulse current: 80A
Kind of package: tape
на замовлення 144 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+33.33 грн
14+28.57 грн
15+26.67 грн
80+11.67 грн
Мінімальне замовлення: 13
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SF1604PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1604GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 200V
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SF1606GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; Ifsm: 125A; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. forward impulse current: 125A
Max. off-state voltage: 0.4kV
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SF1606PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.4kV
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SF1608GH SF1601G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO220AB; 35ns
Mounting: THT
Type of diode: rectifying
Case: TO220AB
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF1608PTH SF1601PT SERIES_G2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; TO3P; 35ns; automotive industry
Mounting: THT
Type of diode: rectifying
Case: TO3P
Semiconductor structure: common cathode; double
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Application: automotive industry
Load current: 8A x2
Max. load current: 16A
Max. off-state voltage: 0.6kV
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SF16G SF11G SERIES_H2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 35ns
Mounting: THT
Type of diode: rectifying
Case: DO41
Semiconductor structure: single diode
Reverse recovery time: 35ns
Features of semiconductor devices: superfast switching
Load current: 1A
Max. forward impulse current: 30A
Max. off-state voltage: 0.4kV
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TUAU10MH
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 10A; TO277A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 10A
Semiconductor structure: single diode
Case: TO277A
Kind of package: reel; tape
Application: automotive industry
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UG1007GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 500V; 5Ax2; TO220AB; automotive industry
Case: TO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: ultrafast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 500V
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YBS3007G RAG pVersion=0046&contRep=ZT&docId=005056AB281E1EDCAD8186EB2672A0D2&compId=YBS300xG.pdf?ci_sign=7faf374e49fb7234cf5a2a0d5040b4a0ab291a2b
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; YBS
Case: YBS
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 3A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Max. forward impulse current: 110A
Kind of package: reel; tape
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HER1007GH HER1001G SERIES_I2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
Application: automotive industry
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HERF1007GAH HERF1007GA SERIES_B2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; automotive industry
Case: ITO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
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HERF1007GH HERF1001G SERIES_I2105.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 5Ax2; ITO220AB; automotive industry
Case: ITO220AB
Application: automotive industry
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.8kV
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HERAF1007GH
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 10A; ITO220AC; automotive industry
Case: ITO220AC
Application: automotive industry
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 10A
Max. off-state voltage: 0.8kV
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SS36 pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A9EC4D6952469&compId=SS36.pdf?ci_sign=3ba15ca933a1ba610194514f8bdb00d7e5d5923c
SS36
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 70A
Kind of package: reel; tape
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BAT54W RFG BAT54W SERIES_D2102.pdf
BAT54W RFG
+1
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
на замовлення 991 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
72+5.56 грн
120+3.31 грн
327+2.86 грн
898+2.70 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BZX55B3V6 A0G pdf.php?pn=BZX55B3V6
BZX55B3V6 A0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 2µA
Zener current: 5mA
на замовлення 815 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
125+3.42 грн
135+3.01 грн
390+2.40 грн
Мінімальне замовлення: 125
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MBR745 MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf
MBR745
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Case: TO220AC
Forward voltage at If: 840mV
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MBR745 MBR735-745%20MBRB735-745%20N0720%20REV.A.pdf MBR735 SERIES_K2103.pdf mbr7x5.pdf mbr735-d.pdf ds23007.pdf
MBR745
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 7.5A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 7.5A
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.75V
Max. load current: 15A
на замовлення 94 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+57.26 грн
10+49.60 грн
35+27.30 грн
94+25.79 грн
Мінімальне замовлення: 8
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SMAJ40A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 44.4V; 6.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4V
Max. forward impulse current: 6.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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MUR820 MUR820%28PbF%29.pdf MUR820%2C%20RURP820.pdf MUR820 SERIES_K2103.pdf
MUR820
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; tube; Ifsm: 100A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 100A
Case: TO220AC
Max. forward voltage: 0.975V
Reverse recovery time: 25ns
на замовлення 391 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+50.42 грн
12+33.97 грн
50+29.20 грн
Мінімальне замовлення: 9
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MUR820H MUR820%20SERIES_K2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 8A; TO220AC; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: TO220AC
Reverse recovery time: 25ns
Application: automotive industry
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SMAJ48A tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ.pdf 5399_SMAJ48A%20SMA.PDF SMAJ48A000S0CX.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf view?usp=sharing 824500481.pdf SMAJ%20SERIES%20N0223%20REV.B.pdf SMAJ SERIES_U2102.pdf smaj%20series(400w,5v_440v).pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3V; 5.2A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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SMAJ43CA 824501431.pdf SMAJ.pdf SMAJx.pdf smaj%20series(400w,5v_440v).pdf tvs-diodes-smaj-datasheet?assetguid=13c2a823-03b8-4d1f-9ddc-9b44670aed9d SMAJ%20SERIES%20N0223%20REV.B.pdf eaton-smaje-tvs-diode-power-esd-suppressor-data-sheet.pdf SMAJ SERIES_U2102.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8V; 5.8A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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1PGSMB5934
1PGSMB5934
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 24V; 63mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 24V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 63mA
на замовлення 252 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+29.91 грн
17+24.68 грн
100+18.89 грн
Мінімальне замовлення: 15
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ES2J ES2(A-J)%20N0160%20REV.D.pdf ES2A SERIES_L2102.pdf ES2_1.pdf 5399_ES2J%20SMA.PDF ES2x.pdf SMAES2J000S260.pdf es2a.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 2A; 35ns; SMB; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 2A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMB
Max. forward voltage: 1.7V
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
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1N4746A 1N4736AT-D.PDF FAIRS30206-1.pdf?t.download=true&u=5oefqw 1N4740A SERIES_O2104.pdf 1N4728A-1N4764A%20N0183%20REV.C.pdf 1N47xxA-SERIES.pdf 1N4728AG_1N4764AG_e3.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1W; 18V; 14mA; tape; DO41; single diode; Ir: 5uA
Kind of package: tape
Case: DO41
Mounting: THT
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 5µA
Zener current: 14mA
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 18V
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TESDH5V0U04P2Q1 RNG TESDH5V0U04P2Q1 _A2110.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 7÷9V; 4A; 60W; double,common anode; DFN1006-3
Case: DFN1006-3
Mounting: SMD
Kind of package: reel; tape
Version: ESD
Semiconductor structure: common anode; double
Type of diode: TVS array
Leakage current: 0.1µA
Max. forward impulse current: 4A
Max. off-state voltage: 5V
Breakdown voltage: 7...9V
Peak pulse power dissipation: 60W
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ABS6 pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
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ABS6 RGG pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C85D171198E40D6&compId=ABS2_ser.pdf?ci_sign=c7df9ea3fb49622182eb8d739c2e282bb7d36487
ABS6 RGG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 1A; Ifsm: 30A; ABS
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Max. forward impulse current: 30A
Case: ABS
Max. off-state voltage: 0.6kV
Features of semiconductor devices: glass passivated
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
15+28.20 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
KBU802G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU803G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU804G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU805G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 8A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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KBU807G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF9C9F7160C39F20D6&compId=KBU807G_ser.pdf?ci_sign=46bc7b4d42e38ddc59d14ffb999ff759710e4a66
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 8A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SS22M SS22M SERIES_M2103.pdf
SS22M
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: microSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Load current: 2A
Max. off-state voltage: 20V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 900 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.67 грн
39+10.32 грн
100+7.78 грн
175+5.32 грн
478+5.08 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
SS22L SS22L SERIES_O2103.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Case: subSMA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Load current: 2A
Max. off-state voltage: 20V
Kind of package: reel; tape
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BZX55C22 R0G
BZX55C22 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
115+3.76 грн
140+2.88 грн
Мінімальне замовлення: 115
В кошику  од. на суму  грн.
BZX55C24 R0G
BZX55C24 R0G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 1300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
130+3.38 грн
155+2.58 грн
500+2.27 грн
Мінімальне замовлення: 130
В кошику  од. на суму  грн.
TS25P07G TS25P01G SERIES_Q2203.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 25A
Max. forward impulse current: 0.3kA
Case: TS-6P
Electrical mounting: THT
Max. forward voltage: 1.1V
Max. load current: 25A
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+140.16 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
SR110 SR102 SERIES_G2104.pdf
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 1A
Max. off-state voltage: 100V
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SFT16G pdf.php?pn=SFT16G
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; TS1
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TS1
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S3M V6G
S3M V6G
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.80 грн
29+13.89 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BZX84C10 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C10 RFG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 10V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Zener current: 5mA
на замовлення 980 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
70+6.32 грн
115+3.60 грн
330+2.83 грн
910+2.67 грн
Мінімальне замовлення: 70
В кошику  од. на суму  грн.
BZT52C18 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C18 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C30 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C30 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C36 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C36 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 948 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
105+4.10 грн
145+2.78 грн
250+2.49 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
BZT52C13 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C13 RHG
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
50+8.55 грн
79+5.08 грн
126+3.16 грн
250+2.68 грн
500+2.51 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
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