Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66308) > Сторінка 1100 з 1106
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMF85A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 94.4V; 1.3A; unidirectional; SOD123W; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 85V Breakdown voltage: 94.4V Max. forward impulse current: 1.3A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
RS1MFL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 230000 шт: термін постачання 21-30 дні (днів) |
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TSM150NB04DCR RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56 Mounting: SMD Drain-source voltage: 40V Drain current: 8A On-state resistance: 15mΩ Type of transistor: N-MOSFET x2 Power dissipation: 8W Polarisation: unipolar Kind of package: tape Gate charge: 18nC Kind of channel: enhancement Gate-source voltage: ±20V Case: PDFN56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52B24-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 24V Zener current: 5mA Leakage current: 0.1µA Power dissipation: 0.41W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 |
на замовлення 5575 шт: термін постачання 21-30 дні (днів) |
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BZT52B27-G RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.41W; 27V; 2mA; SMD; reel,tape; SOD123; single diode Tolerance: ±2% Semiconductor structure: single diode Zener voltage: 27V Zener current: 2mA Leakage current: 0.1µA Power dissipation: 0.41W Kind of package: reel; tape Type of diode: Zener Mounting: SMD Case: SOD123 |
на замовлення 5540 шт: термін постачання 21-30 дні (днів) |
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1V5KE33A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 1250 шт: термін постачання 21-30 дні (днів) |
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SMCJ20CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 48A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Tolerance: ±5% Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ5V0CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS Type of diode: TVS |
на замовлення 19789 шт: термін постачання 21-30 дні (днів) |
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TS2951CS50 RLG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1 Case: SOP8 Mounting: SMD Output voltage: 5V Output current: 0.15A Voltage drop: 0.45V Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 6...30V Manufacturer series: TS2951 Kind of voltage regulator: fixed; LDO; linear Operating temperature: -40...125°C Tolerance: ±0.1% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SS110LH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying Type of diode: Schottky rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BZT52C3V6 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 4.5µA Zener current: 5mA |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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US1KH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
HS2MAH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1.5A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
HS2MAL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
HS2MALH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SMBJ12A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
1N914BWS RRG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: switching Type of diode: switching |
на замовлення 15000 шт: термін постачання 21-30 дні (днів) |
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SMCJ100A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 111÷123V; 9.7A; unidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 100V Breakdown voltage: 111...123V Max. forward impulse current: 9.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
HERA804GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 8A; TO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: TO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
HERAF804GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 8A; ITO220AC; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 300V Load current: 8A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: ITO220AC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMF64AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.2kW; 71.1V; 1.7A; unidirectional; SOD123W; reel,tape Type of diode: TVS Case: SOD123W Max. off-state voltage: 64V Semiconductor structure: unidirectional Max. forward impulse current: 1.7A Breakdown voltage: 71.1V Application: automotive industry Kind of package: reel; tape Peak pulse power dissipation: 0.2kW Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SK56CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 60V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.75V Max. forward impulse current: 120A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMA6J30A | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMA6J |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMA6J30AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.3A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMA6J Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR2560CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 60V Load current: 12.5A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. load current: 25A Max. forward voltage: 0.75V Max. forward impulse current: 200A |
на замовлення 22 шт: термін постачання 21-30 дні (днів) |
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MBR2560CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 60V Load current: 12.5A x2 Semiconductor structure: common cathode; double Kind of package: tube Max. load current: 25A Max. forward voltage: 0.75V Max. forward impulse current: 200A |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
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MBRS2560CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2 Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 60V Load current: 15A x2 Semiconductor structure: common cathode; double |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MBRF10L100CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
MBRF10H100CT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 5A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ60CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SS215 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZV55B10 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1055 шт: термін постачання 21-30 дні (днів) |
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MBS2 RCG | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
MBS2 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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TS317LCS RLG | TAIWAN SEMICONDUCTOR |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8 Case: SOP8 Mounting: SMD Output voltage: 1.25...37V Output current: 0.1A Type of integrated circuit: voltage regulator Number of channels: 1 Input voltage: 40V Kind of voltage regulator: adjustable; linear Operating temperature: -20...125°C Tolerance: ±4% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Case: IPAK Drain-source voltage: 60V Drain current: 19A On-state resistance: 34mΩ Power dissipation: 40W Polarisation: unipolar Kind of package: tube Gate charge: 16.6nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TSM340N06CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 17500 шт: термін постачання 21-30 дні (днів) |
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SMCJ30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMCJ30AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSCR400CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSCR402CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: DPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1.5KE400CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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GBU1002 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU1005 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Version: flat Leads: flat pin Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 220A Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: GBU |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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GBU1007 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Version: flat Leads: flat pin Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 220A Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: GBU |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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P4SMA27A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 11A |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 8.4A |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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MUR440SH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: reel; tape Case: SMC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TSM900N10CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1097 шт: термін постачання 21-30 дні (днів) |
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SSL14 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.39V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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SSL14 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.39V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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SFF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ40CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZS55C3V6 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Zener current: 5mA Leakage current: 2µA |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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KBU1004G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A Max. off-state voltage: 0.4kV Load current: 10A Features of semiconductor devices: glass passivated Case: KBU Kind of package: in-tray Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Leads: round pin Max. forward voltage: 1.1V Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
KBU1007G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ100A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. |
SMF85A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 94.4V; 1.3A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 94.4V; 1.3A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 85V
Breakdown voltage: 94.4V
Max. forward impulse current: 1.3A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
RS1MFL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 230000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 2.72 грн |
TSM150NB04DCR RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 8A; 8W; PDFN56
Mounting: SMD
Drain-source voltage: 40V
Drain current: 8A
On-state resistance: 15mΩ
Type of transistor: N-MOSFET x2
Power dissipation: 8W
Polarisation: unipolar
Kind of package: tape
Gate charge: 18nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Case: PDFN56
товару немає в наявності
В кошику
од. на суму грн.
BZT52B24-G RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 24V
Zener current: 5mA
Leakage current: 0.1µA
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 24V; 5mA; SMD; reel,tape; SOD123; single diode
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 24V
Zener current: 5mA
Leakage current: 0.1µA
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
на замовлення 5575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.06 грн |
70+ | 5.67 грн |
100+ | 4.51 грн |
210+ | 4.31 грн |
500+ | 4.05 грн |
3000+ | 3.92 грн |
BZT52B27-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 27V; 2mA; SMD; reel,tape; SOD123; single diode
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 27V
Zener current: 2mA
Leakage current: 0.1µA
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 27V; 2mA; SMD; reel,tape; SOD123; single diode
Tolerance: ±2%
Semiconductor structure: single diode
Zener voltage: 27V
Zener current: 2mA
Leakage current: 0.1µA
Power dissipation: 0.41W
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Case: SOD123
на замовлення 5540 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
40+ | 11.06 грн |
70+ | 5.67 грн |
100+ | 4.51 грн |
210+ | 4.31 грн |
500+ | 4.05 грн |
3000+ | 3.92 грн |
1V5KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 1250 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1250+ | 17.66 грн |
SMCJ20CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 22.2÷24.5V; 48A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 48A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Tolerance: ±5%
Manufacturer series: SMCJ
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SMBJ5V0CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS
Type of diode: TVS
на замовлення 19789 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 7.51 грн |
TS2951CS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.45V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 6...30V
Manufacturer series: TS2951
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Tolerance: ±0.1%
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; SOP8; SMD; Ch: 1
Case: SOP8
Mounting: SMD
Output voltage: 5V
Output current: 0.15A
Voltage drop: 0.45V
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 6...30V
Manufacturer series: TS2951
Kind of voltage regulator: fixed; LDO; linear
Operating temperature: -40...125°C
Tolerance: ±0.1%
товару немає в наявності
В кошику
од. на суму грн.
SS110LH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying
Type of diode: Schottky rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 7.92 грн |
BZT52C3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Zener current: 5mA
на замовлення 120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
90+ | 4.70 грн |
120+ | 3.07 грн |
US1KH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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HS2MAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1.5A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1.5A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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HS2MAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
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HS2MALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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SMBJ12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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1N914BWS RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
Category: SMD universal diodes
Description: Diode: switching
Type of diode: switching
на замовлення 15000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 0.97 грн |
SMCJ100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.7A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 111÷123V; 9.7A; unidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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HERA804GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; TO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: TO220AC
Application: automotive industry
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HERAF804GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 8A; ITO220AC; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 8A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: ITO220AC
Application: automotive industry
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SMF64AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 71.1V; 1.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Case: SOD123W
Max. off-state voltage: 64V
Semiconductor structure: unidirectional
Max. forward impulse current: 1.7A
Breakdown voltage: 71.1V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 0.2kW
Mounting: SMD
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 71.1V; 1.7A; unidirectional; SOD123W; reel,tape
Type of diode: TVS
Case: SOD123W
Max. off-state voltage: 64V
Semiconductor structure: unidirectional
Max. forward impulse current: 1.7A
Breakdown voltage: 71.1V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 0.2kW
Mounting: SMD
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SK56CH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
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SMA6J30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
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SMA6J30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 33.3V; 12.3A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.3A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMA6J
Application: automotive industry
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MBR2560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 25A
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 25A
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
на замовлення 22 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 86.65 грн |
6+ | 74.33 грн |
10+ | 61.31 грн |
16+ | 55.94 грн |
MBR2560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 25A
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 60V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Kind of package: tube
Max. load current: 25A
Max. forward voltage: 0.75V
Max. forward impulse current: 200A
на замовлення 100 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 80.05 грн |
10+ | 65.90 грн |
18+ | 50.58 грн |
49+ | 47.51 грн |
MBRS2560CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 60V; 15Ax2
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 60V
Load current: 15A x2
Semiconductor structure: common cathode; double
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MBRF10L100CT |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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MBRF10H100CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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SMBJ60CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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SS215 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZV55B10 L1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.53 грн |
110+ | 3.55 грн |
355+ | 2.54 грн |
970+ | 2.41 грн |
MBS2 RCG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
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MBS2 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.04 грн |
36+ | 10.88 грн |
50+ | 9.43 грн |
100+ | 8.89 грн |
138+ | 6.51 грн |
377+ | 6.21 грн |
TS317LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Output voltage: 1.25...37V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Operating temperature: -20...125°C
Tolerance: ±4%
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Case: SOP8
Mounting: SMD
Output voltage: 1.25...37V
Output current: 0.1A
Type of integrated circuit: voltage regulator
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Operating temperature: -20...125°C
Tolerance: ±4%
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TSM340N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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TSM340N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.11 грн |
SMCJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSCR400CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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TSCR402CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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TSM1NB60CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tape
Kind of channel: enhancement
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TSM1NB60CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
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1.5KE400CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.94 грн |
10+ | 43.68 грн |
32+ | 28.43 грн |
GBU1002 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1005 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 98.21 грн |
10+ | 78.17 грн |
13+ | 69.74 грн |
36+ | 65.90 грн |
GBU1007 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 109.76 грн |
5+ | 91.96 грн |
13+ | 69.64 грн |
36+ | 65.84 грн |
P4SMA27A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 11A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 11A
на замовлення 165 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.16 грн |
34+ | 11.50 грн |
100+ | 10.12 грн |
103+ | 8.75 грн |
P4SMA36A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
на замовлення 194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.17 грн |
36+ | 10.73 грн |
100+ | 9.43 грн |
109+ | 8.20 грн |
MUR440SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Case: SMC
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Case: SMC
Application: automotive industry
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TSM900N10CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 15.10 грн |
BZX55B24 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1097 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.15 грн |
125+ | 3.07 грн |
139+ | 2.77 грн |
250+ | 2.56 грн |
407+ | 2.20 грн |
SSL14 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.63 грн |
33+ | 11.72 грн |
100+ | 8.66 грн |
171+ | 5.29 грн |
468+ | 4.98 грн |
SSL14 M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.99 грн |
SFF1608GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
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SMBJ40CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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од. на суму грн.
BZS55C3V6 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
135+ | 3.14 грн |
230+ | 1.69 грн |
500+ | 1.35 грн |
730+ | 1.23 грн |
KBU1004G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Kind of package: in-tray
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: round pin
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Kind of package: in-tray
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: round pin
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
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KBU1007G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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од. на суму грн.
SMAJ100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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од. на суму грн.