Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66231) > Сторінка 1101 з 1104
| Фото | Назва | Виробник | Інформація |
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BZT52C18 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA Zener current: 5mA |
на замовлення 660 шт: термін постачання 21-30 дні (днів) |
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BZT52C30 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 30V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 960 шт: термін постачання 21-30 дні (днів) |
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BZT52C36 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 36V Zener current: 2mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 948 шт: термін постачання 21-30 дні (днів) |
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BZT52C13 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA Zener current: 5mA |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
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BZT52C11 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 90nA |
на замовлення 860 шт: термін постачання 21-30 дні (днів) |
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BZT52C12 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode Mounting: SMD Type of diode: Zener Leakage current: 90nA Zener current: 5mA Power dissipation: 0.5W Tolerance: ±5% Zener voltage: 12V Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123F |
на замовлення 755 шт: термін постачання 21-30 дні (днів) |
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BZT52C22 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 599 шт: термін постачання 21-30 дні (днів) |
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BZT52C75 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 75V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 45nA |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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MMSZ5232B RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.6V Zener current: 20mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 5µA |
на замовлення 5335 шт: термін постачання 21-30 дні (днів) |
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BZT52C8V2 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Zener current: 5mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 630nA |
на замовлення 620 шт: термін постачання 21-30 дні (днів) |
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BZT52B20-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 20V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 4725 шт: термін постачання 21-30 дні (днів) |
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BZT52B4V3 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.3V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 5805 шт: термін постачання 21-30 дні (днів) |
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BZT52B3V6 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 4.5µA |
на замовлення 5690 шт: термін постачання 21-30 дні (днів) |
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BZT52B4V7 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 4465 шт: термін постачання 21-30 дні (днів) |
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BZT52B13-G RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.41W Zener voltage: 13V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 5880 шт: термін постачання 21-30 дні (днів) |
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| SMDJ36CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 3kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 51.6A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: SMDJ Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ22CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 44A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZW04-376B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04 Type of diode: TVS Max. off-state voltage: 376V Breakdown voltage: 418V Max. forward impulse current: 0.67A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: BZW04 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSM4936DCS RLG | TAIWAN SEMICONDUCTOR |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8 Kind of package: tape Case: SOP8 Kind of channel: enhancement Type of transistor: N-MOSFET x2 Mounting: SMD Polarisation: unipolar Gate charge: 13nC On-state resistance: 36mΩ Power dissipation: 2.1W Drain current: 5.9A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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TS2938CS33 RLG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.6V Output voltage: 3.3V Output current: 0.5A Case: SOP8 Mounting: SMD Manufacturer series: TS2938 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4.3...26V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSG65N110CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 18A Pulsed drain current: 35A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 4nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSG65N195CE RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN88 Gate-source voltage: -10...7V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM060NB06CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 103nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM060NB06LCZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 111A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: THT Gate charge: 107nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSM60NE048PW C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 61A Power dissipation: 431W Case: TO247 Gate-source voltage: ±30V On-state resistance: 48mΩ Mounting: THT Gate charge: 114nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| US1KH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Capacitance: 10pF Case: SMA Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ64A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 15A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| 5.0SMDJ30AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ Type of diode: TVS Peak pulse power dissipation: 5kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 103A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 5.0SMDJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MBR2545CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. load current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MBR2545CT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Max. forward impulse current: 200A Max. forward voltage: 0.82V Max. load current: 25A |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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| MBR2545CTH | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MUR120S | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 0.875V Reverse recovery time: 25ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MUR120SH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: reel; tape Case: SMB Max. forward voltage: 0.875V Reverse recovery time: 25ns Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES3J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMC Max. forward voltage: 1.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TSF30U45C | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Case: ITO220AB Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMBJ43CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 9A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZW04-64 | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04 Manufacturer series: BZW04 Case: DO41 Max. forward impulse current: 3.9A Max. off-state voltage: 64.1V Breakdown voltage: 71.3V Peak pulse power dissipation: 0.4kW Semiconductor structure: unidirectional Mounting: THT Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZW04-64B | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04 Manufacturer series: BZW04 Case: DO41 Max. forward impulse current: 3.9A Max. off-state voltage: 64.1V Breakdown voltage: 71.3V Peak pulse power dissipation: 0.4kW Semiconductor structure: bidirectional Mounting: THT Type of diode: TVS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SMCJ24CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 40A Semiconductor structure: bidirectional Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MUR860 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A Semiconductor structure: single diode Kind of package: tube Case: TO220AC Max. forward voltage: 1.7V Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| TSS70U RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape Type of diode: Schottky switching Case: 0603 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Max. forward impulse current: 0.1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HER1006GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 0.6kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| HER1008GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry Semiconductor structure: common cathode; double Case: TO220AB Features of semiconductor devices: superfast switching Type of diode: rectifying Mounting: THT Load current: 5A x2 Max. load current: 10A Max. off-state voltage: 1kV Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SS26 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward voltage: 0.7V Load current: 2A Max. off-state voltage: 60V Kind of package: reel; tape Case: SMB Type of diode: Schottky rectifying Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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P6SMB24CA M4G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 19A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Tolerance: ±5% |
на замовлення 290 шт: термін постачання 21-30 дні (днів) |
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| TSS0230LU RGG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape Type of diode: Schottky switching Case: 0603B Mounting: SMD Max. off-state voltage: 35V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 1A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SS13 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 30V Semiconductor structure: single diode Case: SMA |
на замовлення 6464 шт: термін постачання 21-30 дні (днів) |
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SS13M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: microSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 25A Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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SR1060 C0 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V Mounting: THT Max. off-state voltage: 60V Case: TO220AB Max. forward impulse current: 120A Kind of package: tube Type of diode: Schottky rectifying Semiconductor structure: common cathode; double Max. forward voltage: 0.7V Load current: 10A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM500P02CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±10V On-state resistance: 50mΩ Mounting: SMD Gate charge: 9.6nC Kind of package: tape Kind of channel: enhancement |
на замовлення 474 шт: термін постачання 21-30 дні (днів) |
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| ES2B | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape Case: SMB Features of semiconductor devices: superfast switching Type of diode: rectifying Semiconductor structure: single diode Mounting: SMD Load current: 2A Max. off-state voltage: 100V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TS5213CX533 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 3.3V Output current: 80mA Case: SOT23-5 Mounting: SMD Manufacturer series: TS5213 Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TS5213CX550 RFG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.42V Output voltage: 5V Output current: 80mA Case: SOT23-5 Mounting: SMD Manufacturer series: TS5213 Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 2.5...16V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| P4SMA100A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 85.5V Semiconductor structure: unidirectional Max. forward impulse current: 3A Breakdown voltage: 95V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZX85C6V8 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.8V Kind of package: tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Zener current: 35mA Leakage current: 1µA |
на замовлення 410 шт: термін постачання 21-30 дні (днів) |
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TSM2323CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.7A Power dissipation: 0.8W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 39mΩ Mounting: SMD Gate charge: 19nC Kind of package: tape Kind of channel: enhancement |
на замовлення 224 шт: термін постачання 21-30 дні (днів) |
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| SMF12A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Max. forward impulse current: 10.1A Max. off-state voltage: 12V Breakdown voltage: 13.3V Peak pulse power dissipation: 0.2kW Case: SOD123W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES2G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES2GAH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ES2GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 2A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. |
| BZT52C18 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Zener current: 5mA
на замовлення 660 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C30 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 30V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 30V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 960 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C36 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 36V; 2mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 36V
Zener current: 2mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 948 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C13 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Zener current: 5mA
на замовлення 895 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 79+ | 5.08 грн |
| 126+ | 3.16 грн |
| 250+ | 2.68 грн |
| 500+ | 2.51 грн |
| BZT52C11 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 90nA
на замовлення 860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C12 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; 5mA; SMD; reel,tape; SOD123F; single diode
Mounting: SMD
Type of diode: Zener
Leakage current: 90nA
Zener current: 5mA
Power dissipation: 0.5W
Tolerance: ±5%
Zener voltage: 12V
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123F
на замовлення 755 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.55 грн |
| 82+ | 4.84 грн |
| 120+ | 3.32 грн |
| 250+ | 2.86 грн |
| 340+ | 2.75 грн |
| 500+ | 2.56 грн |
| BZT52C22 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 599 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52C75 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 75V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 75V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 45nA
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.20 грн |
| MMSZ5232B RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.6V; 20mA; SMD; reel,tape; SOD123F; Ir: 5uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.6V
Zener current: 20mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 5µA
на замовлення 5335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.96 грн |
| 100+ | 4.19 грн |
| 240+ | 3.91 грн |
| 250+ | 3.70 грн |
| 1000+ | 3.56 грн |
| BZT52C8V2 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Zener current: 5mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 630nA
на замовлення 620 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 105+ | 4.10 грн |
| 145+ | 2.78 грн |
| 250+ | 2.49 грн |
| BZT52B20-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 20V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 20V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 4725 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 9.74 грн |
| 85+ | 4.95 грн |
| 105+ | 3.94 грн |
| 500+ | 3.78 грн |
| BZT52B4V3 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.3V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.3V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 5805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.87 грн |
| 105+ | 3.96 грн |
| 250+ | 3.50 грн |
| 1000+ | 3.36 грн |
| BZT52B3V6 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 4.5µA
на замовлення 5690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.38 грн |
| 100+ | 4.38 грн |
| 230+ | 4.11 грн |
| 250+ | 3.87 грн |
| 1000+ | 3.73 грн |
| BZT52B4V7 RHG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 4465 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 4.87 грн |
| 105+ | 3.96 грн |
| 250+ | 3.50 грн |
| 1000+ | 3.36 грн |
| BZT52B13-G RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.41W; 13V; 5mA; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.41W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 9.74 грн |
| 85+ | 4.95 грн |
| 105+ | 3.94 грн |
| 500+ | 3.80 грн |
| SMDJ36CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 3kW; 40V; 51.6A; bidirectional; DO214AB,SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 3kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 51.6A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: SMDJ
Kind of package: reel; tape
Application: automotive industry
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| SMCJ22CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 24.4÷26.9V; 44A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 44A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| BZW04-376B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 418V; 0.67A; bidirectional; DO41; 0.4kW; BZW04
Type of diode: TVS
Max. off-state voltage: 376V
Breakdown voltage: 418V
Max. forward impulse current: 0.67A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: BZW04
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| TSM4936DCS RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.9A; 2.1W; SOP8
Kind of package: tape
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 13nC
On-state resistance: 36mΩ
Power dissipation: 2.1W
Drain current: 5.9A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.01 грн |
| 12+ | 35.87 грн |
| 25+ | 31.74 грн |
| 33+ | 28.65 грн |
| 90+ | 27.06 грн |
| TS2938CS33 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.5A; SOP8; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.6V
Output voltage: 3.3V
Output current: 0.5A
Case: SOP8
Mounting: SMD
Manufacturer series: TS2938
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4.3...26V
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| TSG65N110CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 18A; Idm: 35A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 18A
Pulsed drain current: 35A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSG65N195CE RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN88
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN88
Gate-source voltage: -10...7V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSM060NB06CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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| TSM060NB06LCZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 111A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 111A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Kind of channel: enhancement
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| TSM60NE048PW C0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 61A; 431W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 61A
Power dissipation: 431W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 48mΩ
Mounting: THT
Gate charge: 114nC
Kind of package: tube
Kind of channel: enhancement
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| US1KH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 75ns; SMA; Ifsm: 30A; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Capacitance: 10pF
Case: SMA
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| SMCJ64A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 15A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 15A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| 5.0SMDJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 5kW; 33.3V; 103A; unidirectional; DO214AB,SMC; 5.0SMDJ
Type of diode: TVS
Peak pulse power dissipation: 5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 103A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 5.0SMDJ
Application: automotive industry
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| MBR2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
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| MBR2545CT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Max. forward impulse current: 200A
Max. forward voltage: 0.82V
Max. load current: 25A
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 133.33 грн |
| 5+ | 106.34 грн |
| 10+ | 99.20 грн |
| 18+ | 52.38 грн |
| 50+ | 49.20 грн |
| MBR2545CTH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Application: automotive industry
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| MUR120S |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
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| MUR120SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; SMB; Ufmax: 875mV; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: reel; tape
Case: SMB
Max. forward voltage: 0.875V
Reverse recovery time: 25ns
Application: automotive industry
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| ES3J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 35ns; SMC; Ufmax: 1.7V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMC
Max. forward voltage: 1.7V
Kind of package: reel; tape
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| TSF30U45C |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; ITO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: ITO220AB
Kind of package: tube
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| SMBJ43CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷52.8V; 9A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 9A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZW04-64 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 71.3V; 3.9A; unidirectional; DO41; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: unidirectional
Mounting: THT
Type of diode: TVS
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| BZW04-64B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 71.3V; 3.9A; bidirectional; DO41; 0.4kW; BZW04
Manufacturer series: BZW04
Case: DO41
Max. forward impulse current: 3.9A
Max. off-state voltage: 64.1V
Breakdown voltage: 71.3V
Peak pulse power dissipation: 0.4kW
Semiconductor structure: bidirectional
Mounting: THT
Type of diode: TVS
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| SMCJ24CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 26.7÷29.5V; 40A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 40A
Semiconductor structure: bidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: reel; tape
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| MUR860 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AC; Ufmax: 1.7V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 50ns
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| TSS70U RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603; SMD; 70V; 0.07A; reel,tape
Type of diode: Schottky switching
Case: 0603
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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| HER1006GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 0.6kV
Application: automotive industry
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| HER1008GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 5Ax2; TO220AB; automotive industry
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Mounting: THT
Load current: 5A x2
Max. load current: 10A
Max. off-state voltage: 1kV
Application: automotive industry
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| SS26 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward voltage: 0.7V
Load current: 2A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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| P6SMB24CA M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 24V; 19A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 19A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Tolerance: ±5%
на замовлення 290 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 13.33 грн |
| 80+ | 12.14 грн |
| 100+ | 11.98 грн |
| 215+ | 11.43 грн |
| 250+ | 11.19 грн |
| TSS0230LU RGG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0603B; SMD; 35V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: 0603B
Mounting: SMD
Max. off-state voltage: 35V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
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| SS13 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 30V
Semiconductor structure: single diode
Case: SMA
на замовлення 6464 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.26 грн |
| 46+ | 8.65 грн |
| 100+ | 7.30 грн |
| 186+ | 5.00 грн |
| 510+ | 4.76 грн |
| SS13M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: microSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 25A
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.77 грн |
| 29+ | 14.13 грн |
| 100+ | 8.97 грн |
| 175+ | 5.32 грн |
| 482+ | 5.00 грн |
| SR1060 C0 |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AB; Ufmax: 0.7V
Mounting: THT
Max. off-state voltage: 60V
Case: TO220AB
Max. forward impulse current: 120A
Kind of package: tube
Type of diode: Schottky rectifying
Semiconductor structure: common cathode; double
Max. forward voltage: 0.7V
Load current: 10A
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| TSM500P02CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.56W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 9.6nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 474 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 25.64 грн |
| 27+ | 15.08 грн |
| 50+ | 15.00 грн |
| ES2B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; SMB; reel,tape
Case: SMB
Features of semiconductor devices: superfast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Load current: 2A
Max. off-state voltage: 100V
Kind of package: reel; tape
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| TS5213CX533 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 3.3V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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| TS5213CX550 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; SOT23-5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.42V
Output voltage: 5V
Output current: 80mA
Case: SOT23-5
Mounting: SMD
Manufacturer series: TS5213
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 2.5...16V
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| P4SMA100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 95V; 3A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 85.5V
Semiconductor structure: unidirectional
Max. forward impulse current: 3A
Breakdown voltage: 95V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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| BZX85C6V8 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; 35mA; tape; DO41; single diode; Ir: 1uA
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Kind of package: tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Zener current: 35mA
Leakage current: 1µA
на замовлення 410 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 7.61 грн |
| 100+ | 5.95 грн |
| 200+ | 4.76 грн |
| TSM2323CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.7A; 800mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.7A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 39mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 224 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 78.63 грн |
| 7+ | 60.79 грн |
| 33+ | 28.97 грн |
| 89+ | 27.38 грн |
| SMF12A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 10.1A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.2kW
Case: SOD123W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 13.3V; 10.1A; unidirectional; SOD123W; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Max. forward impulse current: 10.1A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.2kW
Case: SOD123W
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| ES2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMB
Kind of package: reel; tape
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| ES2GAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Kind of package: reel; tape
Application: automotive industry
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| ES2GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 2A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 2A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Kind of package: reel; tape
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од. на суму грн.












