Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66130) > Сторінка 1101 з 1103
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SMBJ60CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 60V Breakdown voltage: 66.7...73.7V Max. forward impulse current: 6.5A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SS215 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 150V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZV55B10 L1G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1055 шт: термін постачання 21-30 дні (днів) |
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MBS2 RCG | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
MBS2 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 200V Load current: 0.8A Max. forward impulse current: 35A Case: MBS; TO269AA Electrical mounting: SMT Kind of package: reel; tape Max. forward voltage: 1V |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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TS317LCS RLG | TAIWAN SEMICONDUCTOR |
Category: Adjustable voltage regulators Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8 Type of integrated circuit: voltage regulator Mounting: SMD Operating temperature: -20...125°C Case: SOP8 Tolerance: ±4% Output voltage: 1.25...37V Output current: 0.1A Number of channels: 1 Input voltage: 40V Kind of voltage regulator: adjustable; linear |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
TSM340N06CH X0G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK Type of transistor: N-MOSFET Case: IPAK Drain-source voltage: 60V Drain current: 19A On-state resistance: 34mΩ Power dissipation: 40W Polarisation: unipolar Kind of package: tube Gate charge: 16.6nC Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TSM340N06CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 17500 шт: термін постачання 21-30 дні (днів) |
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SMCJ30A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMCJ30AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 32A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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TSCR400CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSCR402CX6H RFG | TAIWAN SEMICONDUCTOR |
![]() Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SOT26 Mounting: SMD Operating temperature: -55...150°C Operating voltage: 40V DC Power dissipation: 0.75W Operating current: 65mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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TSM1NB60CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: DPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: SMD Gate charge: 6.1nC Kind of package: tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
TSM1NB60CH C5G | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.7A Power dissipation: 39W Case: IPAK Gate-source voltage: ±30V On-state resistance: 10Ω Mounting: THT Gate charge: 6.1nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1.5KE400CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 548V Breakdown voltage: 400V Max. forward impulse current: 2.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE |
на замовлення 48 шт: термін постачання 21-30 дні (днів) |
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GBU1002 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 100V Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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GBU1005 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A Version: flat Leads: flat pin Max. off-state voltage: 0.6kV Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 220A Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: GBU |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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GBU1007 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Version: flat Leads: flat pin Max. off-state voltage: 1kV Max. forward voltage: 1.1V Load current: 10A Max. forward impulse current: 220A Kind of package: tube Electrical mounting: THT Type of bridge rectifier: single-phase Case: GBU |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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P4SMA27A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 23.1V Breakdown voltage: 27V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 11A |
на замовлення 165 шт: термін постачання 21-30 дні (днів) |
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P4SMA36A M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30.8V Breakdown voltage: 36V Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA Max. forward impulse current: 8.4A |
на замовлення 194 шт: термін постачання 21-30 дні (днів) |
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MUR440SH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 4A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: reel; tape Case: SMC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TSM900N10CP ROG | TAIWAN SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 2500 шт: термін постачання 21-30 дні (днів) |
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BZX55B24 A0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Zener current: 5mA Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 0.1µA |
на замовлення 1097 шт: термін постачання 21-30 дні (днів) |
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SSL14 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.39V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 980 шт: термін постачання 21-30 дні (днів) |
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SSL14 M2G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.39V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 23 шт: термін постачання 21-30 дні (днів) |
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SFF1608GH | TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 8A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: superfast switching Case: ITO220AB Max. load current: 16A Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMBJ40CA | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZS55C3V6 RXG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: 1206 Semiconductor structure: single diode Zener current: 5mA Leakage current: 2µA |
на замовлення 1180 шт: термін постачання 21-30 дні (днів) |
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KBU1004G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A Max. off-state voltage: 0.4kV Load current: 10A Features of semiconductor devices: glass passivated Case: KBU Kind of package: in-tray Electrical mounting: THT Version: flat Type of bridge rectifier: single-phase Leads: round pin Max. forward voltage: 1.1V Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
KBU1007G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 200A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ100A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SMAJ100CA | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111V Max. forward impulse current: 1.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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HS1ML | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 1kV; 1A; subSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: subSMA Kind of package: reel; tape |
на замовлення 347 шт: термін постачання 21-30 дні (днів) |
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ES1GL | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; SMD; 400V; 1A; subSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: subSMA Kind of package: reel; tape |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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SF3004PT | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 30A Semiconductor structure: common cathode; double Case: TO247AD Kind of package: tube Features of semiconductor devices: superfast switching |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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BZX84C3V9 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 3µA Zener current: 5mA |
на замовлення 330 шт: термін постачання 21-30 дні (днів) |
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BZX84C5V6 RFG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 1µA Zener current: 5mA |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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SMBJ40A | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 40V Breakdown voltage: 44.4...49.1V Max. forward impulse current: 9.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
1.5SMC33A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
1.5SMC33AH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 34A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Application: automotive industry Manufacturer series: 1.5SMC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
TS2596CM533 RNG | TAIWAN SEMICONDUCTOR |
![]() Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...40V DC Output voltage: 3.3V DC Output current: 3A Case: D2PAK-5 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DBL104G C1 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP Kind of package: tube Electrical mounting: THT Version: DIP Type of bridge rectifier: single-phase Case: DBL Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 1A Max. forward impulse current: 40A |
на замовлення 145 шт: термін постачання 21-30 дні (днів) |
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BZX85C4V7 R0G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 4.7V Kind of package: reel; tape Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 3µA Zener current: 45mA |
на замовлення 155 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7S R9G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Zener current: 5mA Leakage current: 2.7µA |
на замовлення 3460 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7 RH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 2.7µA |
на замовлення 350 шт: термін постачання 21-30 дні (днів) |
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BZT52C4V7 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Zener current: 5mA Leakage current: 2.7µA |
на замовлення 882 шт: термін постачання 21-30 дні (днів) |
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MBR1660 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.75V Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MBR1060 | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 10A Case: TO220AC Forward voltage at If: 0.8V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RABS20M M3G | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: ABS |
на замовлення 70 шт: термін постачання 21-30 дні (днів) |
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RABS20M | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS Max. off-state voltage: 1kV Max. forward voltage: 1.16V Load current: 2A Max. forward impulse current: 50A Kind of package: reel; tape Electrical mounting: SMT Features of semiconductor devices: glass passivated Type of bridge rectifier: single-phase Case: ABS |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ES1DLH | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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P4KE33A | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() ![]() Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 9A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Manufacturer series: P4KE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
1N5408G | TAIWAN SEMICONDUCTOR |
![]() ![]() ![]() Description: Diode: rectifying; THT; 1kV; 3A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Case: DO201AD Load current: 3A Semiconductor structure: single diode |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
GBPC2501 | TAIWAN SEMICONDUCTOR |
![]() Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A Version: square Max. forward impulse current: 0.3kA Leads: connectors FASTON Kind of package: in-tray Electrical mounting: THT Case: GBPC Features of semiconductor devices: glass passivated Max. off-state voltage: 100V Type of bridge rectifier: single-phase Max. forward voltage: 1.1V Load current: 25A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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1PGSMB5945 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 68V; 22mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 68V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA Zener current: 22mA |
на замовлення 95 шт: термін постачання 21-30 дні (днів) |
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SS19 | TAIWAN SEMICONDUCTOR |
![]() ![]() Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape Case: SMA Load current: 1A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
SS19L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape Case: subSMA Max. forward voltage: 0.8V Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 30A Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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P6SMB39A M4G | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 11.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
SR306 | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 60V Load current: 3A Semiconductor structure: single diode Case: DO201AD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BZT52C6V2 RHG | TAIWAN SEMICONDUCTOR |
![]() Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; SOD123F; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 2.7µA Zener current: 5mA |
на замовлення 465 шт: термін постачання 21-30 дні (днів) |
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SMBJ60CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 66.7÷73.7V; 6.5A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 60V
Breakdown voltage: 66.7...73.7V
Max. forward impulse current: 6.5A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Tolerance: ±5%
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SS215 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
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BZV55B10 L1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1055 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
75+ | 5.50 грн |
110+ | 3.53 грн |
355+ | 2.53 грн |
970+ | 2.39 грн |
MBS2 RCG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
товару немає в наявності
В кошику
од. на суму грн.
MBS2 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 0.8A; Ifsm: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.8A
Max. forward impulse current: 35A
Case: MBS; TO269AA
Electrical mounting: SMT
Kind of package: reel; tape
Max. forward voltage: 1V
на замовлення 775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 12.98 грн |
36+ | 10.83 грн |
50+ | 9.38 грн |
100+ | 8.85 грн |
138+ | 6.48 грн |
377+ | 6.18 грн |
TS317LCS RLG |
Виробник: TAIWAN SEMICONDUCTOR
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Type of integrated circuit: voltage regulator
Mounting: SMD
Operating temperature: -20...125°C
Case: SOP8
Tolerance: ±4%
Output voltage: 1.25...37V
Output current: 0.1A
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
Category: Adjustable voltage regulators
Description: IC: voltage regulator; linear,adjustable; 1.25÷37V; 0.1A; SOP8
Type of integrated circuit: voltage regulator
Mounting: SMD
Operating temperature: -20...125°C
Case: SOP8
Tolerance: ±4%
Output voltage: 1.25...37V
Output current: 0.1A
Number of channels: 1
Input voltage: 40V
Kind of voltage regulator: adjustable; linear
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TSM340N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; 40W; IPAK
Type of transistor: N-MOSFET
Case: IPAK
Drain-source voltage: 60V
Drain current: 19A
On-state resistance: 34mΩ
Power dissipation: 40W
Polarisation: unipolar
Kind of package: tube
Gate charge: 16.6nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
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TSM340N06CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 17500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.04 грн |
SMCJ30A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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SMCJ30AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 33.3÷36.8V; 32A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 32A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Application: automotive industry
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TSCR400CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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TSCR402CX6H RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SOT26; 40VDC; 750mW
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SOT26
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 40V DC
Power dissipation: 0.75W
Operating current: 65mA
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TSM1NB60CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 6.1nC
Kind of package: tape
Kind of channel: enhancement
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TSM1NB60CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 700mA; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.7A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 10Ω
Mounting: THT
Gate charge: 6.1nC
Kind of package: tube
Kind of channel: enhancement
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1.5KE400CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 400V; 2.8A; bidirectional; ±5%; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 548V
Breakdown voltage: 400V
Max. forward impulse current: 2.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
на замовлення 48 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.67 грн |
10+ | 43.47 грн |
32+ | 28.29 грн |
GBU1002 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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GBU1005 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
на замовлення 45 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 97.74 грн |
10+ | 77.79 грн |
13+ | 69.40 грн |
36+ | 65.59 грн |
GBU1007 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Version: flat
Leads: flat pin
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 10A
Max. forward impulse current: 220A
Kind of package: tube
Electrical mounting: THT
Type of bridge rectifier: single-phase
Case: GBU
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 109.23 грн |
5+ | 91.52 грн |
13+ | 69.30 грн |
36+ | 65.52 грн |
P4SMA27A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 11A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 27V; 11A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 23.1V
Breakdown voltage: 27V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 11A
на замовлення 165 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
23+ | 18.07 грн |
34+ | 11.44 грн |
100+ | 10.07 грн |
103+ | 8.71 грн |
P4SMA36A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 36V; 8.4A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Max. forward impulse current: 8.4A
на замовлення 194 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 17.08 грн |
36+ | 10.68 грн |
100+ | 9.38 грн |
109+ | 8.16 грн |
MUR440SH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Case: SMC
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 4A; SMC; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 4A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: reel; tape
Case: SMC
Application: automotive industry
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TSM900N10CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 2500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2500+ | 14.87 грн |
BZX55B24 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 24V; 5mA; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Zener current: 5mA
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.1µA
на замовлення 1097 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
100+ | 4.13 грн |
125+ | 3.05 грн |
139+ | 2.75 грн |
250+ | 2.55 грн |
407+ | 2.19 грн |
SSL14 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 980 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 20.53 грн |
33+ | 11.67 грн |
100+ | 8.62 грн |
171+ | 5.26 грн |
468+ | 4.96 грн |
SSL14 M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.39V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 23 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 26.86 грн |
SFF1608GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8Ax2; ITO220AB; automotive industry
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: superfast switching
Case: ITO220AB
Max. load current: 16A
Application: automotive industry
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SMBJ40CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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BZS55C3V6 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; 5mA; SMD; reel,tape; 1206; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: 1206
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2µA
на замовлення 1180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
135+ | 3.12 грн |
230+ | 1.69 грн |
500+ | 1.34 грн |
730+ | 1.22 грн |
KBU1004G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Kind of package: in-tray
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: round pin
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 10A; Ifsm: 200A
Max. off-state voltage: 0.4kV
Load current: 10A
Features of semiconductor devices: glass passivated
Case: KBU
Kind of package: in-tray
Electrical mounting: THT
Version: flat
Type of bridge rectifier: single-phase
Leads: round pin
Max. forward voltage: 1.1V
Max. forward impulse current: 200A
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KBU1007G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 200A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 200A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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SMAJ100A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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SMAJ100CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111V; 1.9A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111V
Max. forward impulse current: 1.9A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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HS1ML |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; subSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; subSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Kind of package: reel; tape
на замовлення 347 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.57 грн |
22+ | 18.07 грн |
100+ | 11.21 грн |
128+ | 6.94 грн |
ES1GL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; subSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; subSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.67 грн |
20+ | 19.52 грн |
100+ | 10.37 грн |
162+ | 5.49 грн |
SF3004PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Kind of package: tube
Features of semiconductor devices: superfast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 30A; tube; TO247AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 30A
Semiconductor structure: common cathode; double
Case: TO247AD
Kind of package: tube
Features of semiconductor devices: superfast switching
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 179.87 грн |
5+ | 151.77 грн |
BZX84C3V9 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 5mA
на замовлення 330 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
140+ | 3.04 грн |
175+ | 2.18 грн |
BZX84C5V6 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 5.6V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 5mA
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
32+ | 13.14 грн |
52+ | 7.47 грн |
67+ | 5.34 грн |
SMBJ40A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷49.1V; 9.7A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...49.1V
Max. forward impulse current: 9.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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1.5SMC33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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1.5SMC33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.4V; 34A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 34A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
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TS2596CM533 RNG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷40VDC; Uout: 3.3VDC; 3A; D2PAK-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...40V DC
Output voltage: 3.3V DC
Output current: 3A
Case: D2PAK-5
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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DBL104G C1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP
Kind of package: tube
Electrical mounting: THT
Version: DIP
Type of bridge rectifier: single-phase
Case: DBL
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 40A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 1A; Ifsm: 40A; DIP
Kind of package: tube
Electrical mounting: THT
Version: DIP
Type of bridge rectifier: single-phase
Case: DBL
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 1A
Max. forward impulse current: 40A
на замовлення 145 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 22.18 грн |
25+ | 16.40 грн |
55+ | 16.32 грн |
100+ | 15.25 грн |
BZX85C4V7 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 45mA
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 4.7V; 45mA; reel,tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 4.7V
Kind of package: reel; tape
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Zener current: 45mA
на замовлення 155 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 15.60 грн |
35+ | 10.98 грн |
100+ | 7.11 грн |
BZT52C4V7S R9G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
на замовлення 3460 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
30+ | 13.96 грн |
49+ | 7.93 грн |
100+ | 5.03 грн |
227+ | 3.93 грн |
500+ | 3.71 грн |
1000+ | 3.57 грн |
BZT52C4V7 RH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
на замовлення 350 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
51+ | 7.55 грн |
73+ | 5.28 грн |
102+ | 3.77 грн |
250+ | 2.64 грн |
BZT52C4V7 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Zener current: 5mA
Leakage current: 2.7µA
на замовлення 882 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.50 грн |
61+ | 6.33 грн |
100+ | 4.05 грн |
314+ | 2.84 грн |
863+ | 2.68 грн |
MBR1660 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 16A; TO220AC; Ufmax: 0.75V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.75V
Max. forward impulse current: 150A
Kind of package: tube
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MBR1060 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Forward voltage at If: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10A; TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A
Case: TO220AC
Forward voltage at If: 0.8V
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RABS20M M3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: ABS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: ABS
на замовлення 70 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 21.60 грн |
30+ | 13.12 грн |
RABS20M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: ABS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; ABS
Max. off-state voltage: 1kV
Max. forward voltage: 1.16V
Load current: 2A
Max. forward impulse current: 50A
Kind of package: reel; tape
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Type of bridge rectifier: single-phase
Case: ABS
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.92 грн |
20+ | 19.52 грн |
100+ | 12.05 грн |
108+ | 8.31 грн |
297+ | 7.86 грн |
ES1DLH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: SMD universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 4.49 грн |
P4KE33A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 31.4V; 9A; unidirectional; DO41; P4KE
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 9A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Manufacturer series: P4KE
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1N5408G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO201AD
Load current: 3A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Case: DO201AD
Load current: 3A
Semiconductor structure: single diode
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од. на суму грн.
GBPC2501 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Version: square
Max. forward impulse current: 0.3kA
Leads: connectors FASTON
Kind of package: in-tray
Electrical mounting: THT
Case: GBPC
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 25A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 25A; Ifsm: 300A
Version: square
Max. forward impulse current: 0.3kA
Leads: connectors FASTON
Kind of package: in-tray
Electrical mounting: THT
Case: GBPC
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Type of bridge rectifier: single-phase
Max. forward voltage: 1.1V
Load current: 25A
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од. на суму грн.
1PGSMB5945 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; 22mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 22mA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 68V; 22mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 68V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Zener current: 22mA
на замовлення 95 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 28.75 грн |
19+ | 21.05 грн |
SS19 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 90V; 1A; reel,tape
Case: SMA
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
товару немає в наявності
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од. на суму грн.
SS19L |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. forward voltage: 0.8V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 90V; 1A; reel,tape
Case: subSMA
Max. forward voltage: 0.8V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.21 грн |
22+ | 17.69 грн |
100+ | 11.44 грн |
145+ | 6.18 грн |
397+ | 5.87 грн |
P6SMB39A M4G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 39V; 11.6A; unidirectional; ±5%; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 11.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
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од. на суму грн.
SR306 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 3A; DO201AD
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Case: DO201AD
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од. на суму грн.
BZT52C6V2 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 5mA; SMD; reel,tape; SOD123F; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 2.7µA
Zener current: 5mA
на замовлення 465 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.03 грн |
68+ | 5.64 грн |
118+ | 3.25 грн |
314+ | 2.84 грн |