Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (66399) > Сторінка 1101 з 1107
| Фото | Назва | Виробник | Інформація |
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| GBU1006 | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1.1V |
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| P4KE47A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 0.4kW; 44.7V; 6.4A; unidirectional; DO41; P4KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.4A Semiconductor structure: unidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| P4KE47CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 44.7V; 6.4A; bidirectional; DO41; 0.4kW; P4KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 44.7V Max. forward impulse current: 6.4A Semiconductor structure: bidirectional Case: DO41 Mounting: THT Peak pulse power dissipation: 0.4kW Manufacturer series: P4KE |
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| P6SMB33AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 31.4V; 13.8A; unidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28.2V Breakdown voltage: 31.4V Max. forward impulse current: 13.8A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: P6SMB Number of channels: 1 Operating temperature: -55...150°C Application: automotive industry |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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| SF26G | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 2A; Ifsm: 50A; DO15; 35ns Mounting: THT Load current: 2A Case: DO15 Max. forward impulse current: 50A Max. off-state voltage: 0.4kV Features of semiconductor devices: superfast switching Semiconductor structure: single diode Reverse recovery time: 35ns Type of diode: rectifying |
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| KBU407G | TAIWAN SEMICONDUCTOR |
Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: KBU Electrical mounting: THT Leads: round pin Kind of package: in-tray Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated |
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TSM2318CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.9A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 10nC Kind of package: tape Kind of channel: enhancement |
на замовлення 139 шт: термін постачання 21-30 дні (днів) |
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BZX55C13 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; 5mA; tape; DO35; single diode; Ir: 100nA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
на замовлення 66 шт: термін постачання 21-30 дні (днів) |
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BZT52B3V9S RRG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 3.9V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD323F Semiconductor structure: single diode Leakage current: 2.7µA |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| TSM3N90CH C5G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.6A Power dissipation: 94W Case: IPAK Gate-source voltage: ±30V On-state resistance: 5.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
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| TSM3N90CZ C0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 1.6A Power dissipation: 94W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 5.1Ω Mounting: THT Gate charge: 17nC Kind of package: tube Kind of channel: enhancement |
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RS1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
| RS1G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Reverse recovery time: 150ns |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry Reverse recovery time: 150ns |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1GLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape Application: automotive industry |
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ABS10 | TAIWAN SEMICONDUCTOR |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; ABS Max. forward impulse current: 30A Max. off-state voltage: 1kV Case: ABS Features of semiconductor devices: glass passivated Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT Load current: 1A Max. forward voltage: 0.95V |
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| RS1D | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: thinSMA Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: thinSMA Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD128 Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| RS1DLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SOD123W Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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SS115 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Semiconductor structure: single diode Case: SMA Mounting: SMD Max. forward voltage: 0.95V Load current: 1A Max. forward impulse current: 40A Max. off-state voltage: 150V |
на замовлення 9823 шт: термін постачання 21-30 дні (днів) |
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S1J | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; reel,tape Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Capacitance: 12pF Reverse recovery time: 1.5µs Load current: 1A Max. off-state voltage: 0.6kV Semiconductor structure: single diode Case: SMA Features of semiconductor devices: glass passivated |
на замовлення 14972 шт: термін постачання 21-30 дні (днів) |
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RS1K | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 1A Reverse recovery time: 0.5µs Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF |
на замовлення 11874 шт: термін постачання 21-30 дні (днів) |
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S1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; reel,tape Type of diode: rectifying Kind of package: reel; tape Mounting: SMD Capacitance: 12pF Reverse recovery time: 1.5µs Load current: 1A Max. off-state voltage: 0.4kV Application: automotive industry Semiconductor structure: single diode Case: SMA Features of semiconductor devices: glass passivated |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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| TSSA5U60 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 5A Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA |
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В кошику од. на суму грн. | |||||||||||||||||
| TSSA3U45 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 45V; 3A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 3A Max. off-state voltage: 45V Semiconductor structure: single diode Case: SMA |
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В кошику од. на суму грн. | |||||||||||||||||
| TSSA3U60 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 3A Max. off-state voltage: 60V Semiconductor structure: single diode Case: SMA |
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В кошику од. на суму грн. | |||||||||||||||||
| TSSA5U50 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 50V; 5A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 5A Max. off-state voltage: 50V Semiconductor structure: single diode Case: SMA |
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В кошику од. на суму грн. | |||||||||||||||||
| TSSA5U60H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape Type of diode: Schottky rectifying Kind of package: reel; tape Mounting: SMD Load current: 5A Max. off-state voltage: 60V Application: automotive industry Semiconductor structure: single diode Case: SMA |
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В кошику од. на суму грн. | |||||||||||||||||
| SMA4F12AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat Manufacturer series: SMA4F Mounting: SMD Kind of package: reel; tape Type of diode: TVS Semiconductor structure: unidirectional Leakage current: 1µA Tolerance: ±5% Max. forward impulse current: 20.5A Max. off-state voltage: 12V Breakdown voltage: 13.4...14.8V Peak pulse power dissipation: 0.4kW Case: SMA flat |
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В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMC36A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Manufacturer series: 1.5SMC |
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В кошику од. на суму грн. | |||||||||||||||||
| 1.5SMC36AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2V Max. forward impulse current: 31A Semiconductor structure: unidirectional Case: DO214AB; SMC Mounting: SMD Application: automotive industry Manufacturer series: 1.5SMC |
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В кошику од. на суму грн. | |||||||||||||||||
| TSG65N190CR RVG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56 Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 19A Case: PDFN56 Gate-source voltage: -10...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| TSA1765CW RPG | TAIWAN SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 560V Collector current: 0.15A Power dissipation: 2W Case: SOT223 Pulsed collector current: 0.5A Mounting: SMD Kind of package: reel; tape |
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В кошику од. на суму грн. | |||||||||||||||||
| SK54CH | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 40V Load current: 5A Semiconductor structure: single diode Max. forward voltage: 0.55V Max. forward impulse current: 120A Kind of package: reel; tape Application: automotive industry |
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В кошику од. на суму грн. | |||||||||||||||||
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BZX85C47 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 47V; 4mA; tape; DO41; single diode; Ir: 500nA Tolerance: ±5% Type of diode: Zener Leakage current: 0.5µA Zener current: 4mA Power dissipation: 1.3W Zener voltage: 47V Case: DO41 Semiconductor structure: single diode Mounting: THT Kind of package: tape |
на замовлення 255 шт: термін постачання 21-30 дні (днів) |
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| BZV55C22 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass Type of diode: Zener Power dissipation: 0.5W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: MiniMELF glass Semiconductor structure: single diode Leakage current: 0.1µA Zener current: 5mA |
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В кошику од. на суму грн. | |||||||||||||||||
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1.5KE91A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 77.8V Breakdown voltage: 91V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 5µA Manufacturer series: 1.5KE Tolerance: ±5% Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||||
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S3D R6 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape Features of semiconductor devices: glass passivated Reverse recovery time: 1.5µs |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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S3J V6G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 600V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Case: SMC Mounting: SMD Max. off-state voltage: 0.6kV Load current: 3A Semiconductor structure: single diode Capacitance: 60pF Max. forward voltage: 1.15V Max. forward impulse current: 100A Kind of package: reel; tape Features of semiconductor devices: glass passivated Reverse recovery time: 1.5µs |
на замовлення 105 шт: термін постачання 21-30 дні (днів) |
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TS358CD C3G | TAIWAN SEMICONDUCTOR |
Category: THT operational amplifiersDescription: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: THT Number of channels: 2 Case: DIP8 Slew rate: 0.4V/μs Operating temperature: 0...70°C Input offset voltage: 9mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: tube Input bias current: 0.5µA Input offset current: 150nA |
на замовлення 2122 шт: термін постачання 21-30 дні (днів) |
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| SR204 | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 2A; DO15; Ufmax: 550mV Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Load current: 2A Max. forward voltage: 0.55V Max. off-state voltage: 40V Case: DO15 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMBJ54A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 54V Breakdown voltage: 60...66.3V Max. forward impulse current: 7.2A Semiconductor structure: unidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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1PGSMB5927 | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Zener current: 125mA Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMB Semiconductor structure: single diode Leakage current: 1µA |
на замовлення 45 шт: термін постачання 21-30 дні (днів) |
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BZY55B2V7 RYG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 0805; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Zener current: 5mA Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: 0805 Semiconductor structure: single diode Leakage current: 10µA |
на замовлення 527 шт: термін постачання 21-30 дні (днів) |
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BZX55B2V7 A0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: DO35 Mounting: THT Tolerance: ±2% Semiconductor structure: single diode Leakage current: 10µA Zener current: 5mA |
на замовлення 410 шт: термін постачання 21-30 дні (днів) |
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BZX84C2V7 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; 5mA; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Kind of package: reel; tape Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Leakage current: 20µA Zener current: 5mA |
на замовлення 5970 шт: термін постачання 21-30 дні (днів) |
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| SMA6S25AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 27.9V; 14.8A; unidirectional; SOD128F; reel,tape Max. off-state voltage: 25V Case: SOD128F Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 14.8A Type of diode: TVS Breakdown voltage: 27.9V Peak pulse power dissipation: 0.6kW Application: automotive industry Semiconductor structure: unidirectional Manufacturer series: SMA6S |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SMAJ10CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1V Max. forward impulse current: 23.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Manufacturer series: SMAJ Kind of package: reel; tape Tolerance: ±5% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TS4264GCW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...150°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±3% Output voltage: 5V Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TS4264CW50 RPG | TAIWAN SEMICONDUCTOR |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD Kind of voltage regulator: fixed; LDO; linear Case: SOT223 Mounting: SMD Type of integrated circuit: voltage regulator Operating temperature: -40...150°C Output current: 0.1A Voltage drop: 0.5V Number of channels: 1 Tolerance: ±2% Output voltage: 5V Input voltage: 5.5...45V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| P4SMA6.8A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA Type of diode: TVS Case: SMA Mounting: SMD Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 40A Breakdown voltage: 6.46V Peak pulse power dissipation: 0.4kW Manufacturer series: P4SMA |
товару немає в наявності |
В кошику од. на суму грн. |
| GBU1006 | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1.1V
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| P4KE47A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.4A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 0.4kW; 44.7V; 6.4A; unidirectional; DO41; P4KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.4A
Semiconductor structure: unidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P4KE47CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.4A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 44.7V; 6.4A; bidirectional; DO41; 0.4kW; P4KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 44.7V
Max. forward impulse current: 6.4A
Semiconductor structure: bidirectional
Case: DO41
Mounting: THT
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4KE
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| P6SMB33AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.4V; 13.8A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMB
Number of channels: 1
Operating temperature: -55...150°C
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 31.4V; 13.8A; unidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28.2V
Breakdown voltage: 31.4V
Max. forward impulse current: 13.8A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: P6SMB
Number of channels: 1
Operating temperature: -55...150°C
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.88 грн |
| SF26G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 50A; DO15; 35ns
Mounting: THT
Load current: 2A
Case: DO15
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Reverse recovery time: 35ns
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 2A; Ifsm: 50A; DO15; 35ns
Mounting: THT
Load current: 2A
Case: DO15
Max. forward impulse current: 50A
Max. off-state voltage: 0.4kV
Features of semiconductor devices: superfast switching
Semiconductor structure: single diode
Reverse recovery time: 35ns
Type of diode: rectifying
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| KBU407G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: KBU
Electrical mounting: THT
Leads: round pin
Kind of package: in-tray
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
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| TSM2318CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.9A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.9A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: tape
Kind of channel: enhancement
на замовлення 139 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 77.28 грн |
| 10+ | 44.89 грн |
| 45+ | 21.13 грн |
| 123+ | 19.93 грн |
| BZX55C13 R0G |
Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; 5mA; tape; DO35; single diode; Ir: 100nA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
на замовлення 66 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.16 грн |
| 57+ | 7.10 грн |
| BZT52B3V9S RRG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.9V; 5mA; SMD; reel,tape; SOD323F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.9V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Leakage current: 2.7µA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 75+ | 5.75 грн |
| 105+ | 3.90 грн |
| 250+ | 3.10 грн |
| 340+ | 2.79 грн |
| 925+ | 2.64 грн |
| TSM3N90CH C5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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| TSM3N90CZ C0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 1.6A; 94W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 1.6A
Power dissipation: 94W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 5.1Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhancement
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| RS1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RS1G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RS1GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Reverse recovery time: 150ns
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| RS1GFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
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| RS1GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 150ns
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Reverse recovery time: 150ns
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| RS1GFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
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| RS1GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| RS1GLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
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| ABS10 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; ABS
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 1A; Ifsm: 30A; ABS
Max. forward impulse current: 30A
Max. off-state voltage: 1kV
Case: ABS
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Load current: 1A
Max. forward voltage: 0.95V
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| RS1D |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
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| RS1DAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
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| RS1DALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; thinSMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: thinSMA
Kind of package: reel; tape
Application: automotive industry
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| RS1DFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
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| RS1DFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD128; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD128
Kind of package: reel; tape
Application: automotive industry
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| RS1DH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
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| RS1DLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
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| RS1DLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SOD123W; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SOD123W
Kind of package: reel; tape
Application: automotive industry
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| SS115 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 150V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 150V; 1A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: SMA
Mounting: SMD
Max. forward voltage: 0.95V
Load current: 1A
Max. forward impulse current: 40A
Max. off-state voltage: 150V
на замовлення 9823 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.60 грн |
| 38+ | 10.68 грн |
| 43+ | 9.49 грн |
| 100+ | 5.89 грн |
| 500+ | 4.19 грн |
| 1000+ | 3.62 грн |
| 5000+ | 2.58 грн |
| 7500+ | 2.37 грн |
| S1J |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 12pF
Reverse recovery time: 1.5µs
Load current: 1A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 1A; 1.5us; SMA; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 12pF
Reverse recovery time: 1.5µs
Load current: 1A
Max. off-state voltage: 0.6kV
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
на замовлення 14972 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.73 грн |
| 84+ | 4.78 грн |
| 137+ | 2.92 грн |
| 500+ | 2.08 грн |
| 529+ | 1.77 грн |
| 1453+ | 1.67 грн |
| 2000+ | 1.61 грн |
| RS1K |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; 500ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Reverse recovery time: 0.5µs
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
на замовлення 11874 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.17 грн |
| 33+ | 12.28 грн |
| 41+ | 9.81 грн |
| 100+ | 4.03 грн |
| 500+ | 3.11 грн |
| 7500+ | 2.90 грн |
| S1GH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 12pF
Reverse recovery time: 1.5µs
Load current: 1A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.5us; SMA; reel,tape
Type of diode: rectifying
Kind of package: reel; tape
Mounting: SMD
Capacitance: 12pF
Reverse recovery time: 1.5µs
Load current: 1A
Max. off-state voltage: 0.4kV
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
Features of semiconductor devices: glass passivated
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.04 грн |
| 32+ | 12.76 грн |
| 100+ | 7.14 грн |
| 280+ | 3.35 грн |
| 770+ | 3.17 грн |
| TSSA5U60 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
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| TSSA3U45 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 3A
Max. off-state voltage: 45V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 45V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 3A
Max. off-state voltage: 45V
Semiconductor structure: single diode
Case: SMA
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| TSSA3U60 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 3A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 3A
Max. off-state voltage: 60V
Semiconductor structure: single diode
Case: SMA
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| TSSA5U50 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 50V
Semiconductor structure: single diode
Case: SMA
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| TSSA5U60H |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 60V; 5A; reel,tape
Type of diode: Schottky rectifying
Kind of package: reel; tape
Mounting: SMD
Load current: 5A
Max. off-state voltage: 60V
Application: automotive industry
Semiconductor structure: single diode
Case: SMA
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| SMA4F12AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Manufacturer series: SMA4F
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 20.5A
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Peak pulse power dissipation: 0.4kW
Case: SMA flat
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 13.4÷14.8V; 20.5A; unidirectional; ±5%; SMA flat
Manufacturer series: SMA4F
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Leakage current: 1µA
Tolerance: ±5%
Max. forward impulse current: 20.5A
Max. off-state voltage: 12V
Breakdown voltage: 13.4...14.8V
Peak pulse power dissipation: 0.4kW
Case: SMA flat
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| 1.5SMC36A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Manufacturer series: 1.5SMC
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| 1.5SMC36AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 34.2V; 31A; unidirectional; DO214AB,SMC; 1.5SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2V
Max. forward impulse current: 31A
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Application: automotive industry
Manufacturer series: 1.5SMC
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| TSG65N190CR RVG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11A; Idm: 19A; PDFN56
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 19A
Case: PDFN56
Gate-source voltage: -10...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| TSA1765CW RPG |
Виробник: TAIWAN SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 560V; 0.15A; 2W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 560V
Collector current: 0.15A
Power dissipation: 2W
Case: SOT223
Pulsed collector current: 0.5A
Mounting: SMD
Kind of package: reel; tape
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| SK54CH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 40V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Max. forward impulse current: 120A
Kind of package: reel; tape
Application: automotive industry
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| BZX85C47 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; 4mA; tape; DO41; single diode; Ir: 500nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.5µA
Zener current: 4mA
Power dissipation: 1.3W
Zener voltage: 47V
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 47V; 4mA; tape; DO41; single diode; Ir: 500nA
Tolerance: ±5%
Type of diode: Zener
Leakage current: 0.5µA
Zener current: 4mA
Power dissipation: 1.3W
Zener voltage: 47V
Case: DO41
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
на замовлення 255 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.61 грн |
| 28+ | 14.43 грн |
| 100+ | 8.43 грн |
| BZV55C22 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; 5mA; SMD; reel,tape; MiniMELF glass
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: MiniMELF glass
Semiconductor structure: single diode
Leakage current: 0.1µA
Zener current: 5mA
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| 1.5KE91A | ![]() |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; ±5%; DO201; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 5µA
Manufacturer series: 1.5KE
Tolerance: ±5%
Kind of package: reel; tape
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| S3D R6 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 44.65 грн |
| S3J V6G |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 3A; 1.5us; SMC; Ufmax: 1.15V; Ifsm: 100A
Type of diode: rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 60pF
Max. forward voltage: 1.15V
Max. forward impulse current: 100A
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Reverse recovery time: 1.5µs
на замовлення 105 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 48+ | 9.10 грн |
| 53+ | 7.58 грн |
| 100+ | 6.06 грн |
| TS358CD C3G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
Category: THT operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.4V/μs
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: tube
Input bias current: 0.5µA
Input offset current: 150nA
на замовлення 2122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 26.62 грн |
| 24+ | 17.30 грн |
| 26+ | 15.63 грн |
| 50+ | 14.59 грн |
| 100+ | 13.64 грн |
| 250+ | 12.52 грн |
| 500+ | 11.96 грн |
| SR204 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 2A; DO15; Ufmax: 550mV
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 2A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Case: DO15
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 2A; DO15; Ufmax: 550mV
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Load current: 2A
Max. forward voltage: 0.55V
Max. off-state voltage: 40V
Case: DO15
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| SMBJ54A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 60÷66.3V; 7.2A; unidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 7.2A
Semiconductor structure: unidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Kind of package: reel; tape
Tolerance: ±5%
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| 1PGSMB5927 |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; 125mA; SMD; reel,tape; SMB; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Zener current: 125mA
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMB
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 45 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 50.66 грн |
| 12+ | 33.65 грн |
| 25+ | 25.44 грн |
| BZY55B2V7 RYG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; SMD; reel,tape; 0805; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Zener current: 5mA
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: 0805
Semiconductor structure: single diode
Leakage current: 10µA
на замовлення 527 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 85+ | 5.15 грн |
| 110+ | 3.64 грн |
| 250+ | 2.89 грн |
| BZX55B2V7 A0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; 5mA; DO35; single diode; Ir: 10uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: DO35
Mounting: THT
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 10µA
Zener current: 5mA
на замовлення 410 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 125+ | 3.43 грн |
| 135+ | 3.02 грн |
| 395+ | 2.41 грн |
| BZX84C2V7 RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 5mA
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; 5mA; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 20µA
Zener current: 5mA
на замовлення 5970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 45+ | 9.79 грн |
| 75+ | 5.49 грн |
| 100+ | 4.37 грн |
| 500+ | 4.21 грн |
| SMA6S25AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 27.9V; 14.8A; unidirectional; SOD128F; reel,tape
Max. off-state voltage: 25V
Case: SOD128F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 14.8A
Type of diode: TVS
Breakdown voltage: 27.9V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: unidirectional
Manufacturer series: SMA6S
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 27.9V; 14.8A; unidirectional; SOD128F; reel,tape
Max. off-state voltage: 25V
Case: SOD128F
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 14.8A
Type of diode: TVS
Breakdown voltage: 27.9V
Peak pulse power dissipation: 0.6kW
Application: automotive industry
Semiconductor structure: unidirectional
Manufacturer series: SMA6S
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| SMAJ10CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1V; 23.5A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1V
Max. forward impulse current: 23.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Manufacturer series: SMAJ
Kind of package: reel; tape
Tolerance: ±5%
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| TS4264GCW50 RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±3%
Output voltage: 5V
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±3%
Output voltage: 5V
Input voltage: 5.5...45V
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| TS4264CW50 RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.1A; SOT223; SMD
Kind of voltage regulator: fixed; LDO; linear
Case: SOT223
Mounting: SMD
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.1A
Voltage drop: 0.5V
Number of channels: 1
Tolerance: ±2%
Output voltage: 5V
Input voltage: 5.5...45V
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| P4SMA6.8A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 6.46V; 40A; unidirectional; SMA; P4SMA
Type of diode: TVS
Case: SMA
Mounting: SMD
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 40A
Breakdown voltage: 6.46V
Peak pulse power dissipation: 0.4kW
Manufacturer series: P4SMA
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