Продукція > TAIWAN SEMICONDUCTOR > Всі товари виробника TAIWAN SEMICONDUCTOR (50226) > Сторінка 822 з 838
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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TSM060N03CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 51A Power dissipation: 54W Case: DPAK Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 11.1nC Kind of package: tape |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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TSM240N03CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4.1A Power dissipation: 1.56W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 4.1nC Kind of package: tape |
на замовлення 218 шт: термін постачання 14-30 дні (днів) |
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SK24A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Max. forward impulse current: 50A Kind of package: reel; tape |
на замовлення 1066 шт: термін постачання 14-30 дні (днів) |
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BZX85C51 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 51V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 51V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 525 шт: термін постачання 14-30 дні (днів) |
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BZX85C56 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 56V; tape; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 56V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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SK110B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape Case: SMB Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 30A Max. forward voltage: 0.85V Max. off-state voltage: 0.1kV Load current: 1A Semiconductor structure: single diode Type of diode: Schottky rectifying |
на замовлення 1992 шт: термін постачання 14-30 дні (днів) |
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UF4004 | TAIWAN SEMICONDUCTOR |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 30A Case: DO41 Reverse recovery time: 50ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TSM2309CX RFG | TAIWAN SEMICONDUCTOR |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23 Mounting: SMD Power dissipation: 1.56W Gate charge: 8.2nC Polarisation: unipolar Drain current: -2A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: SOT23 On-state resistance: 0.24Ω |
на замовлення 1669 шт: термін постачання 14-30 дні (днів) |
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| MBRAD845H | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape Type of diode: Schottky rectifying Case: thinDPAK Mounting: SMD Max. off-state voltage: 45V Load current: 8A Semiconductor structure: single diode Max. forward voltage: 0.7V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MBR6050PT | TAIWAN SEMICONDUCTOR |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 50V Load current: 30A x2 Semiconductor structure: common cathode; double Case: TO247AD Max. forward voltage: 0.93V Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SS25 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 50V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.7V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TSM900N06CW RPG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223 On-state resistance: 90mΩ Mounting: SMD Power dissipation: 4.17W Gate charge: 9.3nC Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tape Case: SOT223 |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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| TSM900N06CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL On-state resistance: 90mΩ Mounting: THT Power dissipation: 25W Gate charge: 9.3nC Polarisation: unipolar Drain current: 7A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: IPAK SL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TSM900N10CH X0G | TAIWAN SEMICONDUCTOR |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL On-state resistance: 90mΩ Mounting: THT Power dissipation: 50W Gate charge: 9.3nC Polarisation: unipolar Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: IPAK SL |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TSM900N10CP ROG | TAIWAN SEMICONDUCTOR |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252 On-state resistance: 72mΩ Mounting: SMD Power dissipation: 50W Gate charge: 9.3nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Case: DPAK; TO252 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SMF10A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape Mounting: SMD Peak pulse power dissipation: 0.2kW Max. off-state voltage: 10V Kind of package: reel; tape Semiconductor structure: unidirectional Case: SOD123W Type of diode: TVS Breakdown voltage: 11.1V Max. forward impulse current: 11.8A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZS55C10 RAG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode Mounting: SMD Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 10V Case - inch: 1206 Kind of package: reel; tape Case - mm: 3216 Semiconductor structure: single diode Type of diode: Zener |
на замовлення 512 шт: термін постачання 14-30 дні (днів) |
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BZS55C10 RXG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode Mounting: SMD Tolerance: ±5% Power dissipation: 0.5W Zener voltage: 10V Case - inch: 1206 Kind of package: reel; tape Case - mm: 3216 Semiconductor structure: single diode Type of diode: Zener |
на замовлення 360 шт: термін постачання 14-30 дні (днів) |
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SMAJ15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MTZJ22SC R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 21.63V; DO34; single diode; tape Power dissipation: 0.5W Kind of package: tape Semiconductor structure: single diode Case: DO34 Zener voltage: 21.63V Type of diode: Zener Tolerance: ±2% Mounting: THT |
на замовлення 9430 шт: термін постачання 14-30 дні (днів) |
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SK310A | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 70A Kind of package: reel; tape |
на замовлення 1333 шт: термін постачання 14-30 дні (днів) |
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SK310B | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 70A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||
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SMCJ58CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C3V9 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 3.9V; SMD; SOD123F; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOD123F Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 690 шт: термін постачання 14-30 дні (днів) |
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BZX84C3V9 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 3.9V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 3.9V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 360 шт: термін постачання 14-30 дні (днів) |
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| SS14L RTG | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. forward voltage: 0.55V Leakage current: 0.4mA |
на замовлення 810000 шт: термін постачання 14-30 дні (днів) |
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BZD27C180PWH | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 1W; 180V; SMD; SOD123W; single diode; reel,tape Kind of package: reel; tape Semiconductor structure: single diode Case: SOD123W Zener voltage: 180V Type of diode: Zener Tolerance: ±5% Mounting: SMD Power dissipation: 1W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ36CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
на замовлення 2471 шт: термін постачання 14-30 дні (днів) |
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SMBJ36CAH | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ36CAHR5G | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 40V; 10.8A; bidirectional; DO214AA,SMB; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40V Max. forward impulse current: 10.8A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Manufacturer series: SMBJ Operating temperature: -55...150°C Number of channels: 1 |
на замовлення 45900 шт: термін постачання 14-30 дні (днів) |
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SMCJ58A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 58V Breakdown voltage: 64.4...71.2V Max. forward impulse current: 16A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AB; SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMCJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS22 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape Mounting: SMD Max. off-state voltage: 20V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward voltage: 0.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS22M | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Max. off-state voltage: 20V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: microSMA Type of diode: Schottky rectifying Max. forward impulse current: 25A Max. forward voltage: 0.6V |
на замовлення 880 шт: термін постачання 14-30 дні (днів) |
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| SS22L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape Mounting: SMD Max. off-state voltage: 20V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: subSMA Type of diode: Schottky rectifying Max. forward voltage: 0.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BZX85C6V8 R0G | TAIWAN SEMICONDUCTOR |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 6.8V; DO41; single diode; tape Type of diode: Zener Power dissipation: 1.3W Zener voltage: 6.8V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: tape |
на замовлення 390 шт: термін постачання 14-30 дні (днів) |
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BZX84C6V8 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 6.8V Case: SOT23 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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| P4SMA150A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: unidirectional Manufacturer series: P4SMA Max. forward impulse current: 2A Max. off-state voltage: 128V Breakdown voltage: 143V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| P4SMA150CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA Type of diode: TVS Mounting: SMD Case: SMA Semiconductor structure: bidirectional Manufacturer series: P4SMA Max. forward impulse current: 2A Max. off-state voltage: 128V Breakdown voltage: 143V Peak pulse power dissipation: 0.4kW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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LL4448 L1 | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: 7 inch reel; tape Max. load current: 0.45A Capacitance: 4pF |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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LL4448 L0G | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V Type of diode: switching Mounting: SMD Max. off-state voltage: 75V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 1V Max. forward impulse current: 2A Kind of package: 13 inch reel; tape Max. load current: 0.45A Capacitance: 4pF |
на замовлення 1395 шт: термін постачання 14-30 дні (днів) |
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SMAJ26AH | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9V Max. forward impulse current: 9.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Kind of package: reel; tape Manufacturer series: SMAJ Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SMBJ16CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 24.2A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZT52C24 RHG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 24V; SMD; SOD123F; reel,tape; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Case: SOD123F Kind of package: reel; tape Semiconductor structure: single diode |
на замовлення 490 шт: термін постачання 14-30 дні (днів) |
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BZX84C4V7 RFG | TAIWAN SEMICONDUCTOR |
Category: SMD Zener diodesDescription: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape |
на замовлення 119 шт: термін постачання 14-30 дні (днів) |
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TS2596SCS50 RLG | TAIWAN SEMICONDUCTOR |
Category: Voltage regulators - DC/DC circuitsDescription: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 4.5...24V DC Output voltage: 5V DC Output current: 2A Case: SOP8 Mounting: SMD Frequency: 127...173kHz Topology: buck Number of channels: 1 Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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P4SMA15A M2G | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 20A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P4SMA |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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P6SMB15CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12.8V Breakdown voltage: 15V Max. forward impulse current: 29A Semiconductor structure: bidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB |
на замовлення 185 шт: термін постачання 14-30 дні (днів) |
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SMBJ12CA | TAIWAN SEMICONDUCTOR |
Category: Bidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 31A Semiconductor structure: bidirectional Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: reel; tape |
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В кошику од. на суму грн. | ||||||||||||||
| TS19503CB10H RBG | TAIWAN SEMICONDUCTOR |
Category: LED driversDescription: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED driver Case: MSOP10EP Output current: 2A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating temperature: -40...125°C Application: for LED applications Operating voltage: 4.5...75V DC Frequency: 1MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ18A | TAIWAN SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 21.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO214AA; SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: SMBJ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: subSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
на замовлення 400 шт: термін постачання 14-30 дні (днів) |
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ES1GLW | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GAL | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GALH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: thinSMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GFS | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GFSH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD128 Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SMA Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ES1GLWH | TAIWAN SEMICONDUCTOR |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Features of semiconductor devices: superfast switching Case: SOD123W Max. forward voltage: 1.3V Kind of package: reel; tape Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SS13 | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
на замовлення 6160 шт: термін постачання 14-30 дні (днів) |
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SS13L | TAIWAN SEMICONDUCTOR |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape Type of diode: Schottky rectifying Case: subSMA Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 1150 шт: термін постачання 14-30 дні (днів) |
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| TSM060N03CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 11.1nC
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 51A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 51A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 11.1nC
Kind of package: tape
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 60.51 грн |
| 9+ | 47.13 грн |
| 25+ | 41.60 грн |
| 100+ | 37.32 грн |
| TSM240N03CX RFG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 4.1nC
Kind of package: tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; 1.56W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.1A
Power dissipation: 1.56W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 4.1nC
Kind of package: tape
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 50.58 грн |
| 14+ | 30.53 грн |
| 25+ | 21.30 грн |
| 100+ | 19.21 грн |
| SK24A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Max. forward impulse current: 50A
Kind of package: reel; tape
на замовлення 1066 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 26.19 грн |
| 27+ | 15.60 грн |
| 50+ | 11.25 грн |
| 100+ | 9.77 грн |
| 500+ | 7.12 грн |
| 1000+ | 6.24 грн |
| BZX85C51 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 51V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 51V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 51V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 51V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 525 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.23 грн |
| 100+ | 5.62 грн |
| 250+ | 4.95 грн |
| BZX85C56 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 56V; tape; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 56V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 110 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.23 грн |
| 100+ | 5.62 грн |
| SK110B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 0.85V
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 1A; reel,tape
Case: SMB
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Max. forward voltage: 0.85V
Max. off-state voltage: 0.1kV
Load current: 1A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
на замовлення 1992 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.90 грн |
| 26+ | 16.52 грн |
| 50+ | 12.08 грн |
| 100+ | 10.73 грн |
| 500+ | 8.30 грн |
| 1000+ | 7.38 грн |
| UF4004 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 30A
Case: DO41
Reverse recovery time: 50ns
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В кошику
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| TSM2309CX RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Mounting: SMD
Power dissipation: 1.56W
Gate charge: 8.2nC
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOT23
On-state resistance: 0.24Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2A; 1.56W; SOT23
Mounting: SMD
Power dissipation: 1.56W
Gate charge: 8.2nC
Polarisation: unipolar
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOT23
On-state resistance: 0.24Ω
на замовлення 1669 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 44.25 грн |
| 21+ | 20.46 грн |
| 100+ | 16.02 грн |
| 500+ | 13.17 грн |
| 1000+ | 11.91 грн |
| MBRAD845H |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; thinDPAK; SMD; 45V; 8A; reel,tape
Type of diode: Schottky rectifying
Case: thinDPAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Application: automotive industry
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В кошику
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| MBR6050PT |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.93V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 50V; 30Ax2; TO247AD; Ufmax: 930mV
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 30A x2
Semiconductor structure: common cathode; double
Case: TO247AD
Max. forward voltage: 0.93V
Kind of package: tube
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од. на суму грн.
| SS25 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 50V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.7V
Kind of package: reel; tape
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В кошику
од. на суму грн.
| TSM900N06CW RPG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
On-state resistance: 90mΩ
Mounting: SMD
Power dissipation: 4.17W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 4.17W; SOT223
On-state resistance: 90mΩ
Mounting: SMD
Power dissipation: 4.17W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tape
Case: SOT223
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.74 грн |
| 17+ | 25.58 грн |
| 100+ | 23.15 грн |
| TSM900N06CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 25W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 25W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 7A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
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од. на суму грн.
| TSM900N10CH X0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 50W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; 50W; IPAK SL
On-state resistance: 90mΩ
Mounting: THT
Power dissipation: 50W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: IPAK SL
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од. на суму грн.
| TSM900N10CP ROG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 50W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK; TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; 50W; DPAK,TO252
On-state resistance: 72mΩ
Mounting: SMD
Power dissipation: 50W
Gate charge: 9.3nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Case: DPAK; TO252
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SMF10A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SOD123W
Type of diode: TVS
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 11.1V; 11.8A; unidirectional; SOD123W; reel,tape
Mounting: SMD
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 10V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Case: SOD123W
Type of diode: TVS
Breakdown voltage: 11.1V
Max. forward impulse current: 11.8A
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| BZS55C10 RAG |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 10V
Case - inch: 1206
Kind of package: reel; tape
Case - mm: 3216
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 10V
Case - inch: 1206
Kind of package: reel; tape
Case - mm: 3216
Semiconductor structure: single diode
Type of diode: Zener
на замовлення 512 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 125+ | 3.61 грн |
| 137+ | 3.07 грн |
| 300+ | 2.93 грн |
| 500+ | 2.63 грн |
| BZS55C10 RXG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 10V
Case - inch: 1206
Kind of package: reel; tape
Case - mm: 3216
Semiconductor structure: single diode
Type of diode: Zener
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; 1206; reel,tape; single diode
Mounting: SMD
Tolerance: ±5%
Power dissipation: 0.5W
Zener voltage: 10V
Case - inch: 1206
Kind of package: reel; tape
Case - mm: 3216
Semiconductor structure: single diode
Type of diode: Zener
на замовлення 360 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 85+ | 5.42 грн |
| 145+ | 2.95 грн |
| SMAJ15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7V; 16.4A; bidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
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| MTZJ22SC R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; DO34; single diode; tape
Power dissipation: 0.5W
Kind of package: tape
Semiconductor structure: single diode
Case: DO34
Zener voltage: 21.63V
Type of diode: Zener
Tolerance: ±2%
Mounting: THT
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 21.63V; DO34; single diode; tape
Power dissipation: 0.5W
Kind of package: tape
Semiconductor structure: single diode
Case: DO34
Zener voltage: 21.63V
Type of diode: Zener
Tolerance: ±2%
Mounting: THT
на замовлення 9430 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 90+ | 5.15 грн |
| 105+ | 4.06 грн |
| 250+ | 3.23 грн |
| 1000+ | 3.05 грн |
| SK310A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
на замовлення 1333 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 19+ | 22.48 грн |
| 50+ | 15.18 грн |
| 100+ | 12.66 грн |
| 250+ | 10.23 грн |
| 500+ | 8.81 грн |
| 1000+ | 7.63 грн |
| SK310B |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 70A
Kind of package: reel; tape
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Мінімальне замовлення: 3000 шт
В кошику
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| SMCJ58CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; bidirectional; ±5%; DO214AB,SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| BZT52C3V9 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.9V; SMD; SOD123F; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 690 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 4.61 грн |
| 135+ | 3.11 грн |
| 250+ | 2.80 грн |
| BZX84C3V9 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3.9V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3.9V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 360 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 155+ | 2.98 грн |
| 180+ | 2.39 грн |
| SS14L RTG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. forward voltage: 0.55V
Leakage current: 0.4mA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. forward voltage: 0.55V
Leakage current: 0.4mA
на замовлення 810000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37500+ | 1.01 грн |
| BZD27C180PWH |
Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 180V; SMD; SOD123W; single diode; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Zener voltage: 180V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 180V; SMD; SOD123W; single diode; reel,tape
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123W
Zener voltage: 180V
Type of diode: Zener
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
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| SMBJ36CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
на замовлення 2471 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 33.42 грн |
| 22+ | 19.54 грн |
| 100+ | 13.33 грн |
| 500+ | 10.90 грн |
| 1000+ | 9.73 грн |
| SMBJ36CAH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.8A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Application: automotive industry
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| SMBJ36CAHR5G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40V; 10.8A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Operating temperature: -55...150°C
Number of channels: 1
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 40V; 10.8A; bidirectional; DO214AA,SMB; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40V
Max. forward impulse current: 10.8A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Manufacturer series: SMBJ
Operating temperature: -55...150°C
Number of channels: 1
на замовлення 45900 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16150+ | 2.36 грн |
| SMCJ58A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 64.4÷71.2V; 16A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 58V
Breakdown voltage: 64.4...71.2V
Max. forward impulse current: 16A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMCJ
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| SS22 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
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| SS22M |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: microSMA
Type of diode: Schottky rectifying
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; microSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: microSMA
Type of diode: Schottky rectifying
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
на замовлення 880 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 44+ | 9.73 грн |
| 100+ | 7.38 грн |
| 250+ | 6.54 грн |
| 500+ | 6.12 грн |
| SS22L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 20V; 2A; reel,tape
Mounting: SMD
Max. off-state voltage: 20V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: subSMA
Type of diode: Schottky rectifying
Max. forward voltage: 0.5V
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| BZX85C6V8 R0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 6.8V; DO41; single diode; tape
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 6.8V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: tape
на замовлення 390 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 7.23 грн |
| 100+ | 5.62 грн |
| 250+ | 4.95 грн |
| BZX84C6V8 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.8V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.8V
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 6.68 грн |
| 115+ | 3.81 грн |
| 500+ | 3.03 грн |
| P4SMA150A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; unidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: unidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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| P4SMA150CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 143V; 2A; bidirectional; SMA; P4SMA
Type of diode: TVS
Mounting: SMD
Case: SMA
Semiconductor structure: bidirectional
Manufacturer series: P4SMA
Max. forward impulse current: 2A
Max. off-state voltage: 128V
Breakdown voltage: 143V
Peak pulse power dissipation: 0.4kW
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| LL4448 L1 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: 7 inch reel; tape
Max. load current: 0.45A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: 7 inch reel; tape
Max. load current: 0.45A
Capacitance: 4pF
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 225.79 грн |
| LL4448 L0G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: 13 inch reel; tape
Max. load current: 0.45A
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.15A; 4ns; MiniMELF glass; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 1V
Max. forward impulse current: 2A
Kind of package: 13 inch reel; tape
Max. load current: 0.45A
Capacitance: 4pF
на замовлення 1395 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 84+ | 5.42 грн |
| 143+ | 2.94 грн |
| 204+ | 2.06 грн |
| 500+ | 1.63 грн |
| 1000+ | 1.46 грн |
| SMAJ26AH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9V; 9.5A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9V
Max. forward impulse current: 9.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: SMAJ
Application: automotive industry
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| SMBJ16CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 17.8÷19.7V; 24.2A; bidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 24.2A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| BZT52C24 RHG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; SOD123F; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Case: SOD123F
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 490 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.64 грн |
| 63+ | 6.71 грн |
| 117+ | 3.59 грн |
| BZX84C4V7 RFG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 4.7V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
на замовлення 119 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 111+ | 4.09 грн |
| 119+ | 3.35 грн |
| TS2596SCS50 RLG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.5÷24VDC; Uout: 5VDC; 2A; SOP8; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.5...24V DC
Output voltage: 5V DC
Output current: 2A
Case: SOP8
Mounting: SMD
Frequency: 127...173kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: reel; tape
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| P4SMA15A M2G |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15V; 20A; unidirectional; ±5%; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 20A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P4SMA
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.82 грн |
| 39+ | 10.82 грн |
| P6SMB15CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15V; 29A; bidirectional; ±5%; SMB; reel,tape; P6SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12.8V
Breakdown voltage: 15V
Max. forward impulse current: 29A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
на замовлення 185 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 34.32 грн |
| 22+ | 19.71 грн |
| 100+ | 13.92 грн |
| SMBJ12CA |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 13.3÷14.7V; 31A; bidirectional; ±5%; DO214AA,SMB
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 31A
Semiconductor structure: bidirectional
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: reel; tape
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| TS19503CB10H RBG |
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Виробник: TAIWAN SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
Category: LED drivers
Description: IC: driver; buck; LED driver; MSOP10EP; 2A; Ch: 1; 4.5÷75VDC; 1MHz
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED driver
Case: MSOP10EP
Output current: 2A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -40...125°C
Application: for LED applications
Operating voltage: 4.5...75V DC
Frequency: 1MHz
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| SMBJ18A |
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Виробник: TAIWAN SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 20÷22.1V; 21.5A; unidirectional; ±5%; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 21.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO214AA; SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: SMBJ
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| ES1GL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; subSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: subSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
на замовлення 400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 21+ | 21.68 грн |
| 25+ | 17.36 грн |
| 100+ | 10.06 грн |
| ES1GLW |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES1GAL |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES1GALH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; thinSMA; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: thinSMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES1GFS |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
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| ES1GFSH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD128; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD128
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES1GH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SMA; Ufmax: 1.3V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SMA
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| ES1GLWH |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 35ns; SOD123W; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Case: SOD123W
Max. forward voltage: 1.3V
Kind of package: reel; tape
Application: automotive industry
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| SS13 |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
на замовлення 6160 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 46+ | 9.93 грн |
| 52+ | 8.22 грн |
| 100+ | 6.88 грн |
| 250+ | 6.21 грн |
| 500+ | 5.79 грн |
| 1000+ | 5.45 грн |
| 2500+ | 4.95 грн |
| SS13L |
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Виробник: TAIWAN SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; subSMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: subSMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 1150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 11.38 грн |
| 100+ | 9.76 грн |
| 500+ | 8.15 грн |
| 1000+ | 7.29 грн |

































